239 results about "Hafnium oxide" patented technology

The invention discloses a nickel-based alloy composite plate and a preparation method thereof, and belongs to the technical field of nickel-based alloys, the nickel-based alloy composite plate comprises a stainless steel bottom plate and a nickel-based alloy plate, and the nickel-based alloy plate comprises, by weight, 52-58 parts of nickel powder, 17-21 parts of molybdenum powder, 8-12 parts of copper powder, 7-9 parts of boron powder, 2-3 parts of modified hafnium carbide powder, 4-7 parts of an alloy reinforcing agent and 2-3 parts of a fluxing agent. The modified hafnium carbide prepared from hafnium oxide and nano carbon powder successfully replaces metal hafnium with high cost in the traditional process; and meanwhile, the actual adding proportion of the modified hafnium carbide in the nickel-based alloy plate is greatly reduced, the cost of industrial mass production is doubly reduced from the two aspects of raw material selection and dosage control, and the economic requirement of large-scale production is better met.

The present disclosure provides a new wet atomic layer etch (ALE) process for etching high-k dielectric materials. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching transition metal oxide dielectric materials in a cyclic wet ALE process. In the example embodiments provided herein, new etch chemistries and methods are provided for etching zirconium dioxide (ZrO2), hafnium dioxide (HfO2) and HfxZr(1-x)O2 dielectrics in a cyclic wet ALE process. However, the wet ALE techniques described herein are not strictly limited to the example materials discussed herein and can be applied to other transition metals and transition metal oxides.

The invention provides a hafnium oxide-based ferroelectric film annealing process with a low thermal budget and a hafnium oxide-based ferroelectric film, and relates to the field of ferroelectric films, the hafnium oxide-based ferroelectric film is subjected to multiple low-temperature rapid annealing cycles, and the hafnium oxide-based ferroelectric film annealing process comprises the following steps: heating to an annealing temperature of 400 DEG C at a heating rate of 10-80K / s, keeping the temperature for 15-120s, and cooling at a cooling rate of not less than 10K / s, and after cooling to room temperature, carrying out next annealing cycle. The internal defect distribution of the thin film is changed through repeated rapid annealing circulation; and multiple times of rapid cooling are introduced, so that multiple times of enhanced stress is generated in the thin film, the hafnium oxide phase change potential barrier is cooperatively regulated and controlled, conversion from a non-ferroelectric high-temperature tetragonal phase to a ferroelectric orthogonal phase is promoted, and the requirement for the high annealing temperature is avoided.

The invention discloses high-strength high-temperature-resistant fireproof industrial glass and a preparation method thereof, and relates to the technical field of glass manufacturing. The industrial glass is prepared from the following raw materials: silicon dioxide, boric oxide, aluminum oxide, sodium oxide, potassium oxide, niobium phosphate, a composite reinforcing component and a clarifying agent, the composite reinforcing component is prepared from hafnium oxide, gadolinium oxide and zinc oxide; the clarifying agent is obtained by mixing cerium dioxide and tin oxide. The preparation method of the industrial glass comprises the following steps: preparing functional components, melting glass, forming a glass substrate, and preparing the industrial glass. The prepared industrial glass is high in strength, good in high-temperature stability and excellent in fireproof performance.

A preparation method of porous hafnium carbide superhigh-temperature ceramic is characterized by comprising the following steps: dispersing graphene oxide in a solvent to form a graphene oxide dispersion liquid, mixing a monomer hafnium source solution with the graphene oxide dispersion liquid, and carrying out hydrothermal treatment on a hafnium oxide carbon precursor network structure to obtain the porous hafnium carbide superhigh-temperature ceramic. The organic-inorganic hybrid precursor is subjected to two-stage heat treatment, the first stage is inorganic treatment, the second stage is carbon thermal reduction reaction, and the porous hafnium carbide ultrahigh-temperature ceramic material is obtained. Graphene oxide is used as a structure-directing agent and an in-situ carbon source, a monomer hafnium source is uniformly anchored on the surface of a GO sheet layer on the molecular scale, an organic-inorganic hybrid precursor is formed, after the precursor is subjected to hydrothermal crosslinking, Hf species and a carbon skeleton are highly mixed on the nanoscale, and the Hf / GO composite material is obtained. And the subsequent carbon thermal reduction reaction can be efficiently completed in a low-temperature interval of 1300-1450 DEG C.

A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

The invention relates to the technical field of hafnium oxide preparation, in particular to a method for preparing hafnium oxide with ultralow iron content, which comprises the following steps: based on N235 extraction separation in a hydrochloric acid system, crushing hafnium oxide raw stone, performing coarse grinding to obtain hafnium oxide powder, then sequentially performing alkali fusion decomposition treatment and acid leaching impurity removal treatment to obtain a zirconium-hafnium mixed solution, and then performing vacuum drying on the zirconium-hafnium mixed solution to obtain the hafnium oxide with ultralow iron content. The preparation method comprises the following steps: taking hafnium as a raw material, carrying out extraction and back extraction to obtain a hafnium-enriched solution, treating the hafnium-enriched solution with ion exchange resin to obtain a high-purity hafnium solution, finally adding saturated ammonia water, filtering and washing the obtained precipitate, drying, and firing to obtain the hafnium oxide with ultralow iron content. According to the invention, while zirconium and hafnium separation is realized, a small amount of contained metal cations, especially iron ions, are fully removed, and the iron content is reduced, so that hafnium oxide with ultralow iron content is obtained.

The invention relates to a high-performance hafnium-based ultrahigh-temperature ceramic-based composite material and a preparation method thereof. The method comprises the following steps: depositing pyrolytic carbon on the carbon fiber surface of a carbon fiber preform through a CVD (Chemical Vapor Deposition) method; preparing a hafnium oxide interface layer on the surface of the pyrolytic carbon through an atomic layer deposition method, and performing ultra-fast annealing treatment to form a pyrolytic carbon-hafnium oxide composite interface layer; carrying out a reaction with a matrix containing a pyrolytic carbon-hafnium oxide composite interface layer through an impregnation pyrolysis method; a hafnium carbide coating is prepared on the surface of the composite material matrix through a CVD method; and preparing a hafnium oxide coating on the surface of the hafnium carbide coating through an atomic layer deposition method, and carrying out ultra-fast annealing treatment to prepare the high-performance hafnium-based ultra-high-temperature ceramic-based composite material. According to the preparation method, the pyrolytic carbon-hafnium oxide composite interface layer is prepared by adopting an atomic layer deposition process and depending on ultra-fast annealing treatment, and meanwhile, the hafnium carbide-hafnium oxide composite coating is prepared, so that the mechanical property of the composite material in a high-temperature aerobic environment is remarkably improved.

The invention provides an epitaxial hafnium oxide-based ferroelectric capacitor and an atomic layer deposition preparation method thereof, and the preparation method comprises the steps: providing a substrate layer, and depositing a zirconia epitaxial buffer layer on the substrate layer through employing an atomic layer deposition technology; forming a hafnium oxide-based epitaxial ferroelectric layer on the zirconium oxide epitaxial buffer layer by adopting an atomic layer deposition process; photoresist is spin-coated on the hafnium oxide-based epitaxial ferroelectric layer, exposure and development are carried out, and the shape of a top electrode is defined; preparing a top electrode on the hafnium oxide-based epitaxial ferroelectric layer; and annealing by adopting a rapid annealing process to realize the ferroelectricity of the hafnium oxide-based epitaxial ferroelectric layer. According to the application, the zirconium oxide epitaxial buffer layer is arranged between the ferroelectric layer and the substrate layer, so that the hafnium oxide-based epitaxial ferroelectric layer grown through ALD presents a highly oriented epitaxial lattice structure, the leakage current of the hafnium oxide-based ferroelectric capacitor can be reduced, and the cycle performance of the capacitor is improved.

The invention provides a performance prediction method for a hafnium oxide semiconductor material structure, and relates to the technical field of semiconductor material research and development. The method comprises the following steps: performing global search in an Hf-O binary system by using crystal structure prediction software, determining the most stable two-dimensional Hf2O4 crystal structure, and further confirming the crystal configuration through structure optimization; calculating an Hf2O4 crystal structure by using density functional theory calculation software, and evaluating the dynamic, thermodynamic and mechanical stability of Hf2O4 by using a calculation result system; the electronic property of the Hf2O4 is obtained through further deep calculation, and the structural stability and semiconductor characteristics of the Hf2O4 are verified. According to the invention, through the first principle and the evolutionary algorithm calculation, the simulation calculation is used to replace the traditional trial-and-error experiment, and the novel semiconductor material with high reliability can be efficiently explored; a theoretical basis is provided for the design of a novel high-performance semiconductor material in advanced chip manufacturing, the research and development period can be expected to be remarkably shortened, and the cost can be reduced.

The invention provides a dielectric filler-doped solid electrolyte, a lithium metal battery and a preparation method, the dielectric filler-doped solid electrolyte comprises a polyether matrix, and the polyether matrix is formed by dispersing a lithium salt and a dielectric filler, the dielectric filler is two or more of barium titanate (BaTiO3), strontium titanate (SrTiO3), zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), cerium oxide (CeO2), zinc oxide (ZnO), lanthanum oxide (La2O3), aluminum oxide (Al2O3), tantalum oxide (Ta2O5) and yttrium oxide (Y2O3).

This invention discloses a tunable broadband photodetector based on a Schottky junction, comprising: an N-type silicon substrate, a gate ferroelectric dielectric, a gate electrode, a source electrode, and a drain electrode; the source electrode, gate ferroelectric dielectric, and drain electrode are sequentially disposed on the N-type silicon substrate, and the gate electrode is disposed on the gate ferroelectric dielectric; the gate ferroelectric dielectric is made of hafnium oxide, a ferroelectric material, and the gate ferroelectric dielectric and the gate electrode together constitute a ferroelectric gate; the gate electrode is made of a transparent metal oxide. This invention utilizes silicon CMOS manufacturing technology and a simple device structure, greatly reducing the fabrication difficulty of silicon-based infrared detectors, and by leveraging the characteristic that the polarization intensity of ferroelectrics weakens under infrared light, extends the detection long-wavelength limit of silicon-based infrared detectors to the near-infrared band. This invention also discloses a method for fabricating and applying a tunable broadband photodetector based on a Schottky junction.

The embodiment of the invention discloses a hafnium oxide-based ferroelectric film doped in a calcium gap position and a preparation method. The method comprises the following steps: preparing a target material: mixing hafnium oxide and calcium oxide according to a set ratio, and grinding to obtain mixed raw material powder; calcining the mixed raw material powder for the first time; grinding the mixed raw material powder calcined for the first time, and performing compression molding to obtain a target material biscuit; calcining the target material biscuit for the second time to obtain the hafnium oxide-based ceramic target material doped in the calcium gap position; a commercial bottom electrode La0. 7Sr0. 3MnO3 target material is used as a first sputtering target, sputtering is carried out under a first set condition, and an LSMO bottom electrode thin film is obtained; taking the calcium gap position doped hafnium oxide-based ceramic target material as a second sputtering target, sputtering under a second set condition, and epitaxially growing on the LSMO bottom electrode film to form a calcium gap position doped hafnium oxide-based ferroelectric film; the chemical composition of the hafnium oxide-based ferroelectric film doped in the calcium gap position is CaxHf (1-x) O (2-x), x is 0.01-0.05, and calcium ions occupy the gap position of a hafnium oxide crystal lattice.

The invention belongs to the technical field of target materials, and discloses a multi-element doped indium germanium oxide ceramic target material and a preparation method thereof. The ceramic target material comprises indium oxide, germanium oxide and doped oxide, and the doped oxide is one or two of cerium oxide, hafnium oxide or titanium oxide; the preparation method comprises the following steps: mixing In2O3 powder, GeO2 and doped oxide powder, carrying out ball milling, drying, grinding and sieving on the mixed powder to obtain mixed oxide powder, sequentially carrying out compression molding and cold isostatic pressing on the mixed oxide powder to obtain a target material green body, putting the target material green body in an oxygen atmosphere, and carrying out sintering to obtain the target material. A multi-element doped indium germanium oxide ceramic target material is obtained by using a multi-stage sintering method; by adjusting the doping elements in the target material, the proportion of the doping elements and the staged sintering temperature and time, the density and the conductivity of the target material can be remarkably improved.

The invention provides a method for recovering a hafnium oxide-based ferroelectric erasing and writing mark phenomenon, which relates to the field of ferroelectric films, and comprises the step of applying bipolar electric pulses or unipolar electric pulses with the polarization direction opposite to that of data erasing and writing electric pulses to a hafnium oxide-based ferroelectric film device which is subjected to data erasing and writing after the electric pulses are applied to the hafnium oxide-based ferroelectric film device. By means of the method, the imprint offset field caused by data erasing and writing can be effectively recovered.

This invention discloses an electrode-free constrained annealed hafnium oxide-based ferroelectric thin film, its preparation method, and its application. The method employs ALD technology to alternately deposit a predetermined number of hafnium oxide layers on a substrate. 0.5 Zr 0.5 O2 thin film and a layer of Al2O3 thin film were used to obtain Al with different doping concentrations. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films, where x represents the number of Al2O3 layers deposited using ALD, and y represents the number of Hf layers deposited using ALD. 0.5 Zr 0.5 The number of O2 layers; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films are subjected to high-temperature annealing to obtain Al. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin film samples; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y A hafnium oxide-based ferroelectric thin film was obtained by depositing a top electrode and a bottom electrode onto a ferroelectric thin film sample. This invention improves the performance of annealed ferroelectric thin films without electrode constraint, deepens the understanding of the ferroelectric principle of HfO2 thin films, and promotes the development of the field of novel practical ferroelectric thin films.

The phase structure evolution phase field analysis method in the annealing and crystallization process of the amorphous hafnium oxide-based ferroelectric film comprises the following steps: S1, setting a sequence parameter xi according to the evolution process from an amorphous phase to a crystal phase in the annealing process, and setting a sequence parameter eta according to the process of the crystal phase and the crystal phase; s2, a phase field theoretical model is established, the total free energy is the sum of the free energy of the sequence parameter xi and the free energy of the sequence parameter eta, and the free density in the free energy of the sequence parameter eta is obtained through coupling of the sequence parameter xi and the sequence parameter eta; s3, deducing a weak form of the control equation; and S4, compiling the weak form equation into COMSOL finite element software, solving and analyzing the phase structure in the annealing crystallization process of the thin film. According to the method, the sequence parameter xi representing the transformation process from the amorphous phase to the crystalline phase is introduced and coupled with the sequence parameter eta to construct a new free energy equation and a new control equation, the weak form of the control equation is deduced, and the phase structure and the evolution rule of the hafnium oxide-based ferroelectric film at different annealing moments can be dynamically reproduced.

The application provides a ferroelectric thin film with a two-dimensional layered electrode and a preparation method thereof. The ferroelectric thin film comprises a ferroelectric hafnium oxide thin film and a two-dimensional layered calcium nitride electrode arranged on the ferroelectric hafnium oxide thin film. The calcium nitride of the application has excellent in-plane lattice matching with hafnium oxide (111), and the lattice mismatch degree is extremely low, which is beneficial to realize high-quality epitaxial growth of the heterostructure and provides a structural basis for device manufacturing. The calcium nitride of the application can form stable chemical bonds (such as Hf-N and O-Ca) with hafnium oxide at the interface, can effectively enhance the interface bonding force, and improve the structural stability of the device. The calcium nitride of the application can significantly inhibit the depolarization field in the hafnium oxide thin film, restore and exceed the ferroelectric polarization intensity of the hafnium oxide bulk, and significantly improve the ferroelectric performance of the hafnium oxide.

The embodiment of the invention discloses a donor-receptor complementary co-doped hafnium oxide-based ferroelectric film material and a preparation method thereof. The method comprises the following steps: according to the composition of the donor-receptor complementary co-doped hafnium oxide-based ceramic target material, mixing raw material powder to obtain mixed raw material powder; calcining the mixed raw material powder under a preset condition; pressing and molding the calcined product into a target material green body; and sintering the target material green body to obtain the donor-receptor complementary co-doped hafnium oxide-based ceramic target material. Wherein the composition of the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material is expressed as AxByHf (1-x-y) O2, A is a donor and comprises elements niobium and tan, and B is an acceptor and comprises elements yttrium and lanthanum; x is more than 0.01 and less than 0.05, and y is more than 0.01 and less than 0.05; the raw material powder containing the donor comprises niobium oxide and tantalum oxide, and the raw material powder containing the acceptor comprises yttrium oxide and lanthanum oxide; and taking the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material as a sputtering target, and obtaining the donor-acceptor complementary co-doped hafnium oxide-based ferroelectric material film by using a pulse laser deposition method.

The invention belongs to the technical field of diluted magnetic semiconductor films, and particularly discloses a method for enhancing the magnetism of a Y-doped HfO2 diluted magnetic semiconductor film through gamma ray induction, and the method comprises the following steps: S1, placing a Y-doped HfO2 target material in a radio frequency device, fixing a 111-oriented YSZ substrate at the central position of a dial plate of the radio frequency device, and enabling the target material to correspond to the substrate; s2, turning on a radio frequency power supply, and officially sputtering after glow is stable to obtain a thin film; s3, annealing the film in a muffle furnace; and S4, placing the annealed film sample in a gamma ray device with 60Co as an irradiation source for irradiation to realize total ion implantation dose treatment. According to the method for enhancing the magnetism of the Y-doped HfO2 diluted magnetic semiconductor thin film through gamma ray induction, the problem that the saturation magnetization intensity of an existing diluted magnetic semiconductor thin film is not high is solved, and the magnetism of the Y-doped HfO2 epitaxial thin film is enhanced, regulated and controlled through gamma ray micro dose.

The invention belongs to the technical field of thermal protection coating materials, and discloses a hafnium oxide-lanthanum hafnate-based low-thermal-expansion low-thermal-conductivity composite thermal barrier / environmental barrier coating material and a preparation method thereof, a thermal barrier / environmental barrier coating and an engine. The hafnium oxide-lanthanum hafnate-based low-thermal-expansion low-thermal-conductivity composite thermal barrier / environmental barrier coating material comprises x vol% of HfO2 (1-x) vol% of La2Hf2O7, and x is larger than 0 and smaller than 100. The hafnium oxide-lanthanum hafnate-based low-thermal-expansion low-thermal-conductivity composite thermal barrier / environmental barrier coating material provided by the invention can improve the use temperature of a substrate, and has the advantages of high melting point, low thermal expansion coefficient and low thermal conductivity.

The invention provides a complex-phase yttrium aluminum garnet ceramic precursor and a preparation method thereof. The complex-phase yttrium aluminum garnet ceramic precursor is composed of yttrium aluminum garnet and hafnium oxide, and continuous ceramic fibers composed of YAG-HfO2 complex phases are obtained by introducing a second component hafnium oxide. By designing and adjusting the proportion of hafnium oxide, the variety and proportion of a complexing agent, the feeding mode and the like, YAG-HfO2 multiphase ceramic precursors with different proportions are prepared, and the YAG-HfO2 continuous ceramic fiber is prepared through melt spinning and post-treatment processes. The obtained YAG-HfO2 continuous ceramic fiber is excellent in mechanical property.

The invention belongs to the technical field of microelectronic devices, and discloses an optimization method of a high-thickness hafnium-based piezoelectric film device, the thickness of a hafnium-based piezoelectric functional layer of the high-thickness hafnium-based piezoelectric film device is not less than 20nm, and the hafnium-based piezoelectric functional layer is of a superlattice structure formed by alternately laminating hafnium oxide and zirconium oxide; the piezoelectric performance of the high-thickness hafnium-based piezoelectric film device is optimized by depositing a third oxide layer at the interface of two adjacent superlattice units every other preset thickness in the hafnium-based piezoelectric functional layer; the third oxide layer is selected from an aluminum oxide layer and a silicon oxide layer. The third oxide layer is inserted into the superlattice laminated structure formed by alternately laminating high-thickness hafnium oxide and zirconium oxide, so that the formation of large grains in the hafnium-based piezoelectric film can be inhibited, the formation of an m-phase structure without piezoelectric property in the hafnium-based film is inhibited, the increase of non-centrosymmetric o-phase structures in the film is promoted, and the piezoelectric property of the film is improved. Therefore, the piezoelectric coefficient of the whole device is improved, and the piezoelectric property of the high-thickness hafnium-based piezoelectric film device is optimized.

The application discloses an electrode structure and a polarization method for an ultrathin back gate ferroelectric dielectric layer, which comprises a source electrode, a drain electrode and a gate electrode; a channel is arranged on the upper surface of the ferroelectric dielectric layer, the source electrode and the drain electrode are arranged at two ends of the channel respectively, and the gate electrode is arranged on the lower surface of the ferroelectric dielectric layer; a first polarization pulse input port is arranged between the source electrode and the gate electrode, and a second polarization pulse input port is arranged between the drain electrode and the gate electrode. The application solves the problems that the low breakdown strength is introduced due to the ultrathin thickness of the ferroelectric film, and the polarization electric field cannot be applied to the vertical channel due to the back gate structure, so that the polarization is insufficient, realizes the regulation and control of the polarization performance of the hafnium-based ultrathin ferroelectric film serving as a back gate dielectric layer in a field effect transistor, further improves the reliability and stability of the residual polarization field, and has important significance for constructing a floating gate structure of a field effect device and inhibiting device leakage and power consumption.

Methods of manufacturing electronic devices are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices that meet reduced thickness, reduced leakage, lower thermal budget, and Vt requirements (including multi-Vt), and have improved device performance and reliability. The method comprises forming a P-dipole stack and an N-dipole stack on a semiconductor substrate by: depositing an interfacial layer (e.g., silicon oxide (SiOx)) on the top surface of the channel; depositing a hafnium-containing layer comprising hafnium oxide (HfOx) and having a thickness of less than or equal to 5 Å on the interfacial layer; and depositing a dipole layer comprising lanthanum nitride (LaN) on the hafnium-containing layer.

The application discloses a kind of heat insulation films and preparation methods thereof.The heat insulation film includes substrate layer, hard coating layer, first dielectric layer, first barrier layer, noble metal layer, second barrier layer, second dielectric layer and adhesive layer from inside to outside.The first dielectric layer is aluminum-doped zinc oxide, the noble metal layer is a silver-gold alloy layer with controllable thickness, and has a gradient distribution of gold content in the thickness direction;The second dielectric layer is formed into a layered composite structure by alternately stacking titanium dioxide and hafnium oxide.The preparation method includes substrate cleaning and surface activation, hard coating layer coating and curing, magnetron sputtering of dielectric layer and barrier layer, alloying deposition of noble metal layer, alternating sputtering of layered composite dielectric, and adhesive layer coating and compounding.The application realizes excellent infrared barrier performance while maintaining high visible light transmittance through the synergistic design of multi-layer structure and components, significantly improves the stability in a humid and hot environment, and reduces the risk of performance degradation.

The present disclosure relates to memristor devices for neuromorphic computing. A memristor device may include a first electrode, an oxide layer, an interface layer fabricated on the oxide layer, and a second electrode fabricated on the interface layer. The first electrode may include a noble metal and / or an inert metal, such as platinum, palladium, iridium, tungsten, molybdenum, ruthenium, etc. The oxide layer may include a dielectric oxide, such as silicon dioxide, hafnium dioxide, tantalum pentoxide, etc. The interface layer may include a discontinuous layer of a  dielectric material,  such as Al2O3, Y2O3, MgO, etc. The second electrode may include one or more metallic materials that may provide metal ions in response to the application of a suitable voltage to the memristor device, such as copper, silver, etc. In some embodiments, the memristor device may further include an interface layer positioned between the first electrode and the oxide layer.

The present application relates to the field of ceramic materials, and specifically relates to a ceramic particle. Provided in the present application is a ceramic particle, comprising: zirconium oxide, hafnium oxide, cerium oxide, and other rare earth element oxides other than cerium oxide. The ceramic particle can have good mechanical properties, wear resistance, suitable density, sphericity, etc. and thus can be suitable for use as a medium or for preparing composite wear-resistant components, etc.

The invention discloses a petuntse composition, ceramic and application, and relates to the technical field of ceramic. The ceramic disclosed by the invention is obtained by sequentially carrying out ageing treatment, sieving treatment, injection molding, airing, drying and sintering treatment on a petuntse composition. The petuntse composition comprises a ceramic waste material A, a ceramic waste material B and modified particles with gallium-coated cuprous oxide as a core and aluminum oxide as a shell in a specific proportion. And the components such as a high-entropy oxide solid solution generated by the reaction of hafnium oxide, tantalum pentoxide, niobium pentoxide, titanium dioxide, zirconium dioxide, chromium sesquioxide and carbon powder, and chromium heptacarbide are introduced, so that the ceramic prepared from the ceramic waste has excellent fracture toughness, bending strength, wear resistance, high temperature resistance and self-repairing ability. Therefore, the method has a wide application prospect.

The invention discloses a high-yield storage and calculation integrated array and a preparation method thereof. The array comprises a substrate, a field effect transistor, a barrier layer and a resistive random access memory. The preparation method comprises the following steps: preparing a bottom electrode with a designed pattern on a substrate; depositing hafnium oxide on the surface of the bottom electrode by using an atomic layer as a dielectric layer; transferring a single-layer two-dimensional MoS2 material on the surface of the deposited hafnium oxide; the transferred two-dimensional MoS2 material is subjected to patterning preparation, and the MoS2 array preparation with multiple channels is completed; after barrier layer deposition is carried out on the MoS2 transistor array on the bottom layer, local etching is carried out, then resistive layer deposition and top electrode overlay are carried out, and the prepared 1T1R device has excellent electrical switching performance and remarkably improved resistance value uniformity.