577 results about "Hafnium oxide" patented technology

The invention discloses an ultrafast motion sensing floating gate transistor based on Van der Waals heterojunction and application thereof. The floating gate transistor comprises a back gate substrate, a Van der Waals heterojunction channel layer, a source electrode and a drain electrode, the source electrode and the drain electrode are arranged on the two sides of the channel layer, the back gate substrate is heavily doped silicon, the surface of the heavily doped silicon is covered with hafnium oxide / aluminum oxide / hafnium oxide (HfO2 / Al2O3 / HfO2) used for nonvolatile light storage, and the Van der Waals heterojunction channel layer is composed of bismuth oxygen selenium-palladium selenide nanosheets used for sensing. The floating gate transistor disclosed by the invention has the capability of quickly responding to an ultraviolet-near infrared wide spectrum and non-volatile storage of light at the same time, and the sensitive spectral response range and responsivity of the photoelectric detector can be effectively improved, so that the integration of dynamic target optical signals in devices in a space domain and a time domain is realized.

The invention provides a preparation method and system for improving the reliability of a gallium nitride transistor, and relates to the technical field of manufacturing, and the method comprises the steps: placing a pretreated sapphire substrate in metal organic chemical vapor deposition equipment, introducing trimethyl gallium and ammonia gas as precursors, and carrying out the epitaxial growth of gallium nitride; an alternating pulse supply technology is adopted, and trace iron doping is introduced in the epitaxial growth process so as to reduce the background carrier concentration in the gallium nitride layer; forming a source electrode structure, a drain electrode structure and a grid electrode structure on the gallium nitride epitaxial layer by adopting photoetching and plasma etching technologies; then, a layer of hafnium oxide with the thickness of 5-10 nanometers is deposited in the grid electrode area through the atomic layer deposition technology to serve as a grid dielectric layer; then a plasma enhanced chemical vapor deposition technology is adopted; and finally, the whole device is processed by using a laser annealing technology, and the annealing process is carried out in a nitrogen atmosphere so as to eliminate an interface state and reduce leakage current.

The invention discloses a nickel-based alloy composite plate and a preparation method thereof, and belongs to the technical field of nickel-based alloys, the nickel-based alloy composite plate comprises a stainless steel bottom plate and a nickel-based alloy plate, and the nickel-based alloy plate comprises, by weight, 52-58 parts of nickel powder, 17-21 parts of molybdenum powder, 8-12 parts of copper powder, 7-9 parts of boron powder, 2-3 parts of modified hafnium carbide powder, 4-7 parts of an alloy reinforcing agent and 2-3 parts of a fluxing agent. The modified hafnium carbide prepared from hafnium oxide and nano carbon powder successfully replaces metal hafnium with high cost in the traditional process; and meanwhile, the actual adding proportion of the modified hafnium carbide in the nickel-based alloy plate is greatly reduced, the cost of industrial mass production is doubly reduced from the two aspects of raw material selection and dosage control, and the economic requirement of large-scale production is better met.

According to the hafnium oxide-based ferroelectric crystal phase modulation method based on the superlattice structure, each hafnium oxide layer in a hafnium oxide-based ferroelectric film is designed to be formed by stacking m hafnium oxide sub-layers, and each doped element layer is designed to be formed by stacking n doped element sub-layers; the hafnium oxide layer and the doping element layer are stacked to form a superlattice structure, and the hafnium oxide-based ferroelectric crystal phase is modulated as o phase dominant, t phase dominant or o / t mixed phase by determining the values of m and n, and the method is as follows: by volume, when the content of o phase is greater than 60%, o phase dominant, m is greater than or equal to 2 and less than or equal to 10, and n is 1.5 * m; when the content of the t phase is greater than 60%, the t phase is dominant, m is greater than or equal to 20 and less than or equal to 30, and n is equal to 2.5 * m; when the difference between the content of the o phase and the content of the t phase does not exceed 20%, the phase is an o / t mixed phase, m is more than 10 and less than 20, and n is equal to 2 * m; wherein m is an even number. According to the invention, the crystalline phase of the hafnium oxide-based ferroelectric film can be modulated, the electric leakage is extremely low, and the reliability is high.

The invention discloses electronic-grade hafnium oxide and a preparation method and application thereof, and relates to the technical field of high-dielectric-constant materials, and the preparation method comprises the following steps: carrying out chlorination reaction on crushed coarse hafnium oxide and graphite powder to prepare coarse hafnium tetrachloride; purifying the crude hafnium tetrachloride by adopting a molten salt purification method and / or a hydrogenation purification method to prepare high-purity hafnium tetrachloride; the method comprises the following steps: introducing high-purity hafnium tetrachloride into a sublimation furnace, introducing oxygen and an AlCl3 gas-phase catalyst into the sublimation furnace, and oxidizing the high-purity hafnium tetrachloride into hafnium oxide particles and chlorine; and dechlorinating the hafnium oxide particles through a fluidized bed to obtain the electronic-grade hafnium oxide. The hafnium oxide prepared by the preparation method not only has electronic-grade ultra-high purity, but also overcomes various defects of synthesis by using hafnium tetrachloride water; and the technological process is simple, the production efficiency is high, and the production cost is low.

In accordance with some embodiments of the present disclosure, a memory device is provided. The memory device may include a first electrode, a ferroelectric layer fabricated on the first electrode, and a second electrode fabricated on the ferroelectric layer. The ferroelectric layer includes a plurality of ferroelectric films and a plurality of interface layers stacked alternately. Each of the ferroelectric films comprises at least one ferroelectric material, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), zirconium-doped hafnium oxide (Hf1-xZrxO2), scandium-doped aluminum nitride (Al1-xScxN), titanates (BaTiO3), niobates (LiNbO3), tantalates (NaTaO3), etc. Each of the interface layers comprises at least one dielectric material that is more chemically stable than the ferroelectric material, such as aluminum oxide.

The present disclosure provides a new wet atomic layer etch (ALE) process for etching high-k dielectric materials. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching transition metal oxide dielectric materials in a cyclic wet ALE process. In the example embodiments provided herein, new etch chemistries and methods are provided for etching zirconium dioxide (ZrO2), hafnium dioxide (HfO2) and HfxZr(1-x)O2 dielectrics in a cyclic wet ALE process. However, the wet ALE techniques described herein are not strictly limited to the example materials discussed herein and can be applied to other transition metals and transition metal oxides.

The invention provides a hafnium oxide-based ferroelectric film annealing process with a low thermal budget and a hafnium oxide-based ferroelectric film, and relates to the field of ferroelectric films, the hafnium oxide-based ferroelectric film is subjected to multiple low-temperature rapid annealing cycles, and the hafnium oxide-based ferroelectric film annealing process comprises the following steps: heating to an annealing temperature of 400 DEG C at a heating rate of 10-80K / s, keeping the temperature for 15-120s, and cooling at a cooling rate of not less than 10K / s, and after cooling to room temperature, carrying out next annealing cycle. The internal defect distribution of the thin film is changed through repeated rapid annealing circulation; and multiple times of rapid cooling are introduced, so that multiple times of enhanced stress is generated in the thin film, the hafnium oxide phase change potential barrier is cooperatively regulated and controlled, conversion from a non-ferroelectric high-temperature tetragonal phase to a ferroelectric orthogonal phase is promoted, and the requirement for the high annealing temperature is avoided.

The invention discloses high-strength high-temperature-resistant fireproof industrial glass and a preparation method thereof, and relates to the technical field of glass manufacturing. The industrial glass is prepared from the following raw materials: silicon dioxide, boric oxide, aluminum oxide, sodium oxide, potassium oxide, niobium phosphate, a composite reinforcing component and a clarifying agent, the composite reinforcing component is prepared from hafnium oxide, gadolinium oxide and zinc oxide; the clarifying agent is obtained by mixing cerium dioxide and tin oxide. The preparation method of the industrial glass comprises the following steps: preparing functional components, melting glass, forming a glass substrate, and preparing the industrial glass. The prepared industrial glass is high in strength, good in high-temperature stability and excellent in fireproof performance.

An improved ceramic material for heat insulation with selection of specific stabilizers and adapted proportions, includes zirconium oxide with 0.2 wt. % to 8.0 wt. % of the base stabilizers: yttrium oxide (Y2O3), hafnium oxide (HfO2), cerium oxide (CeO2), calcium oxide (CaO), and / or magnesium oxide (MgO), wherein at least yttrium oxide (Y2O3) is used, and optionally at least one of the additional stabilizers: 0.2 wt. % to 20 wt. % of erbium oxide (Er2O3) and / or ytterbium oxide (Yb2O3).

The invention discloses a La-doped hafnium oxide-based ferroelectric film, a capacitor and a preparation method of the La-doped hafnium oxide-based ferroelectric film, the La-doped hafnium oxide-based ferroelectric film is of a single (111)-oriented orthorhombic phase structure, and the preparation method comprises the following steps: firstly, epitaxially growing a buffer layer with consistent orientation on a (111)-oriented perovskite substrate, and then epitaxially growing a La-doped hafnium oxide-based ferroelectric film layer on the surface of the buffer layer. The La-doped hafnium oxide-based ferroelectric thin film is obtained by the method, the thickness of the thin film is accurately regulated and controlled, the performance of the La-doped hafnium oxide-based ferroelectric thin film is optimized, and the requirement of an electronic device for a high-performance ferroelectric thin film is met. The laser pulse deposition epitaxial La-doped hafnium oxide-based ferroelectric film provided by the invention is high in purity and good in film forming uniformity; meanwhile, the operation process is simple, low in energy consumption, free of pollution and easy to industrialize.

A preparation method of porous hafnium carbide superhigh-temperature ceramic is characterized by comprising the following steps: dispersing graphene oxide in a solvent to form a graphene oxide dispersion liquid, mixing a monomer hafnium source solution with the graphene oxide dispersion liquid, and carrying out hydrothermal treatment on a hafnium oxide carbon precursor network structure to obtain the porous hafnium carbide superhigh-temperature ceramic. The organic-inorganic hybrid precursor is subjected to two-stage heat treatment, the first stage is inorganic treatment, the second stage is carbon thermal reduction reaction, and the porous hafnium carbide ultrahigh-temperature ceramic material is obtained. Graphene oxide is used as a structure-directing agent and an in-situ carbon source, a monomer hafnium source is uniformly anchored on the surface of a GO sheet layer on the molecular scale, an organic-inorganic hybrid precursor is formed, after the precursor is subjected to hydrothermal crosslinking, Hf species and a carbon skeleton are highly mixed on the nanoscale, and the Hf / GO composite material is obtained. And the subsequent carbon thermal reduction reaction can be efficiently completed in a low-temperature interval of 1300-1450 DEG C.

The invention discloses a flexible multi-valued hafnium oxide-based ferroelectric capacitor and a preparation method thereof, the flexible multi-valued hafnium oxide-based ferroelectric capacitor still has stable ferroelectricity in a bending deformation state, can realize 32 storage states, not only meets the requirement of storage pool calculation for multi-valued storage, but also effectively solves the problem that a ferroelectric material is difficult to maintain stability under strain in the wearable field.

The disclosed and claimed subject matter relates to (1) a process for performing thermal atomic layer etching (ALE) of films that include ZrO2, HfO2, (Hf—Zr)O2 alloy or similar materials which does not require the use of plasmas or corrosive halogenating chemistries and (2) a metal-insulator-metal capacitor (MIMcap) with unique properties enabled by a unique dielectric processing method.

A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

The invention relates to the technical field of hafnium oxide preparation, in particular to a method for preparing hafnium oxide with ultralow iron content, which comprises the following steps: based on N235 extraction separation in a hydrochloric acid system, crushing hafnium oxide raw stone, performing coarse grinding to obtain hafnium oxide powder, then sequentially performing alkali fusion decomposition treatment and acid leaching impurity removal treatment to obtain a zirconium-hafnium mixed solution, and then performing vacuum drying on the zirconium-hafnium mixed solution to obtain the hafnium oxide with ultralow iron content. The preparation method comprises the following steps: taking hafnium as a raw material, carrying out extraction and back extraction to obtain a hafnium-enriched solution, treating the hafnium-enriched solution with ion exchange resin to obtain a high-purity hafnium solution, finally adding saturated ammonia water, filtering and washing the obtained precipitate, drying, and firing to obtain the hafnium oxide with ultralow iron content. According to the invention, while zirconium and hafnium separation is realized, a small amount of contained metal cations, especially iron ions, are fully removed, and the iron content is reduced, so that hafnium oxide with ultralow iron content is obtained.

A sintered bead has a chemical composition, as mass percentages on the basis of the oxides of ZrO2+HfO2+Y2O3+CeO2: balance to 100%; 0%≤Al2O3≤1.5%; CaO≤2%; and oxides other than ZrO2, HfO2, Y2O3, CeO2, Al2O3 and CaO: ≤5%. The contents of Y2O3 and CeO2, as molar percentages on the basis of the sum of ZrO2, HfO2, Y2O3 and CeO2, are such that 1.3%≤Y2O3≤2.5%, in particular 1.3%≤Y2O3<1.8%, and 0.1%≤CeO2≤1.7%, in particular 0.5%≤CeO2≤1.7%, in particular 0.9%<CeO2≤1.7%. The chemical composition has the following crystalline phases, as mass percentages on the basis of the crystalline phases and for a total of 100%: stabilized zirconia: balance to 100%; monoclinic zirconia: ≤15%; and crystalline phases other than stabilized zirconia and monoclinic zirconia: <7%, with the proviso that: Y2O3<1.8% with the proviso that 0.5%≤CeO2, and / or 0.9%<CeO2≤1.7%, and / or 10%<monoclinic zirconia≤15%.

The present invention discloses an abnormal thermal quenching near-infrared fluorescent ceramic and its preparation method and application. The chemical formula of the fluorescent ceramic is: (Lu 0.34+z Y 0.66‑y‑z Sc y )3(Sc 0.85‑x Al 0.15 Cr x )2Al3O 12 , 0.0005≤ x ≤0.02, x : y =1:(5‑10), x : z =1:(10‑20). y Sc 3+ The mole percentage of dodecahedral sites occupied, x Cr ions occupy the octahedron Sc 3+ The molar percentage of the lattice site. z is the Lu in the dodecahedron 3+ The molar percentage of the metering control. The ceramic green body is formed and sintered by using the acrylamide gel injection molding method combined with high temperature solid phase reaction. The luminescent center ion in the ceramic of the present invention presents a +3 valence state under the influence of the matrix microenvironment regulator (calcium carbonate, magnesium oxide and zirconium oxide, silicon dioxide, hafnium dioxide). The excitation peak of the ceramic is between 430nm-460nm, the half-height width is between 90nm-130nm, and the half-height width is between 150nm-160nm. o The luminous intensity at 200°C is 105%-165% of the room temperature. o The luminescence intensity at 400°C is 130%-200% of that at room temperature. When excited by a 430-460 nm excitation source, the emission wavelength ranges from 650 nm to 900 nm. The ceramic preparation process is simple, and the resulting anomalous thermally quenched near-infrared fluorescent ceramic is suitable for high-power near-infrared imaging and detection.

The invention relates to a high-performance hafnium-based ultrahigh-temperature ceramic-based composite material and a preparation method thereof. The method comprises the following steps: depositing pyrolytic carbon on the carbon fiber surface of a carbon fiber preform through a CVD (Chemical Vapor Deposition) method; preparing a hafnium oxide interface layer on the surface of the pyrolytic carbon through an atomic layer deposition method, and performing ultra-fast annealing treatment to form a pyrolytic carbon-hafnium oxide composite interface layer; carrying out a reaction with a matrix containing a pyrolytic carbon-hafnium oxide composite interface layer through an impregnation pyrolysis method; a hafnium carbide coating is prepared on the surface of the composite material matrix through a CVD method; and preparing a hafnium oxide coating on the surface of the hafnium carbide coating through an atomic layer deposition method, and carrying out ultra-fast annealing treatment to prepare the high-performance hafnium-based ultra-high-temperature ceramic-based composite material. According to the preparation method, the pyrolytic carbon-hafnium oxide composite interface layer is prepared by adopting an atomic layer deposition process and depending on ultra-fast annealing treatment, and meanwhile, the hafnium carbide-hafnium oxide composite coating is prepared, so that the mechanical property of the composite material in a high-temperature aerobic environment is remarkably improved.

The invention discloses a high-durability FeFET based on a ferroelectric semiconductor channel and an anti-ferroelectric gate dielectric and a preparation method of the high-durability FeFET. A back gate electrode layer, an anti-ferroelectric gate dielectric layer, a ferroelectric semiconductor channel layer, a top gate high-k gate dielectric layer and a top gate electrode layer are sequentially stacked in a FeFET structure, and the anti-ferroelectric gate dielectric layer serves as a back gate dielectric layer; the top gate high-k gate dielectric layer serves as a top gate dielectric layer, the thickness of the back gate dielectric layer is larger than that of the top gate dielectric layer, and an asymmetric double-gate structure is formed. According to the invention, the hafnium oxide-based anti-ferroelectric thin film is used for replacing a ferroelectric thin film as a gate medium of the FeFET, so that the operation voltage is effectively reduced; no interface layer is arranged between the ferroelectric semiconductor channel and the anti-ferroelectric gate dielectric, so that durability failure caused by charge trapping and defect generation associated with the traditional FeFET and the interface layer is inhibited; the out-of-plane spontaneous polarization continuous, precise and adjustable characteristic of a ferroelectric semiconductor channel and the gate storage mode and the channel storage mode which are switched mutually based on the asymmetric double-gate structure of the FeFET are hopeful to enable the FeFET to show higher durability.

The application discloses a method for constructing oxygen defect regulation of hafnium dioxide 5d track electron, comprising the following steps: S1, using a hydrothermal method, by regulating the oxygen partial pressure in the preparation process, preparing hafnium oxide nanocrystals with different oxygen defects and calculating the oxygen defect concentration; S2, according to the first principle, calculating and constructing a hafnium dioxide crystal model under a microstructure, and modifying the corresponding model according to the experimental results of step S1; S3, according to the hafnium dioxide with oxygen defects obtained in step S2, calculating the total state density and the partial state density of the near-oxygen vacancy end hafnium atom and the far-oxygen vacancy end hafnium atom, respectively, calculating the proportion of the d atom track, and establishing a method for regulating the hafnium dioxide 5d track electron.

The invention discloses a phase field simulation and analysis method for an anisotropic domain wall of a hafnium oxide-based ferroelectric film, and solves the problems that an existing method is difficult to reflect the influence of the anisotropy of the domain wall on domain evolution and polarization overturning dynamics and is associated with macroscopic electrical properties. Comprising the following steps: 1) determining a total energy equation and correlation coefficients; 2) establishing a gradient energy density equation based on domain wall anisotropy; 3) constructing and solving a control equation; 4) visualizing a simulation result; and 5) domain evolution and polarization flipping characteristics under different voltages are analyzed. According to the method, accurate simulation of the anisotropic domain wall and quantitative analysis of the migration behavior of the domain wall are realized, guidance is provided for experimenters to understand the influence rule of the anisotropic domain wall on the domain overturning characteristic and the macroscopic electrical property, the experiment cost is reduced, and the experiment efficiency is improved.

A 3D semiconductor device, the device including: a first level including a first single crystal layer and including first transistors each of which includes a single crystal channel; a first metal layer; a second metal layer overlaying the first metal layer; a second level including second transistors and overlaying the second metal layer, each of first memory cells include at least one second transistor; a third level including third transistors and overlaying the second level; a fourth level including fourth transistors and overlaying the third level, each of second memory cells include at least one fourth transistor, where at least one of the second transistors includes a metal gate, where the first level includes memory control circuits which control writing to the second memory cells, and at least one of the second transistors includes a hafnium oxide gate dielectric.

The invention discloses a doped hafnium oxide-based ferroelectric film based on doping distribution regulation and control and a preparation method and application thereof, an x-y-x structural unit is selected according to the doping concentration, an ALD technology is repeatedly adopted on a substrate to obtain [(Hf0. 5Zr0. 5O2) y-Alx-(Hf0. 5Zr0. 5O2) y] z ferroelectric films with different doping concentrations, x is the number of cycles of a dopant, y is the number of cycles of the dopant, y is the number of cycles of the dopant, y is the number of cycles of the dopant, y is the number of cycles of the dopant, and z is the number of cycles of the dopant. Y is the total number of cycles of hafnium oxide and zirconium oxide, z is the number of repetitions of an x-y-x structural unit, and the doping concentration of the ferroelectric film is x / 2y; a top electrode and a bottom electrode are plated on a [(Hf < 0.5 > Zr < 0.5 > O < 2 >) < y >-Al < x >-(Hf < 0.5 > Zr < 0.5 > O < 2 >) < y >] < z > ferroelectric film, and then high-temperature annealing treatment is performed to obtain the doped hafnium oxide-based ferroelectric film based on doping distribution regulation and control. According to the invention, the distribution of doped elements is accurately regulated and controlled, so that the insulating property, ferroelectric property and durability of the material are remarkably improved, and the requirements of future high-performance electronic devices are met. The technical innovation opens up a new direction for application of ferroelectric materials and promotes further development of related fields.

An X-ray target (10) comprising: a thermally conductive substrate (20) having a surface (22); and a plurality of structures (30) which are separated from one another, on or embedded in at least a portion of the surface (22), each of the at least two structures (30) of the plurality of structures (30) comprising: a thermally conductive first material (32) in thermal communication with the substrate (20), and at least one layer (40) over the first material (32), wherein the at least one layer (40) comprises at least one second material (42) that is different from the first material (32), wherein the at least one second material (42) is configured to generate X-rays when irradiated by electrons, wherein the first materials (32) of the at least two structures (30) are separated from each other and the at least one second material (42) of the at least two structures (30) are separated from each other and different from each other, and wherein the at least one layer (40) further comprises at least one third material (44) between the first material (32) and the at least one second material (42), wherein the at least one third material (44) is different from the first material (32) and the at least one second material (42), and the at least one third material (44) has a thickness between 2 nanometers and 50 nanometers and / or the at least one third material (44) comprises at least one of the following materials: titanium nitride, iridium, chromium, beryllium and hafnium oxide.

The invention relates to an on-chip reconfigurable ferroelectric memory wake-up recovery system and method, and the system comprises a ferroelectric memory array which is used for determining the current working state of a plurality of ferroelectric memory units in the ferroelectric memory array, and generating a corresponding wake-up instruction signal or a recovery instruction signal according to the current working state; and the reconfigurable wake-up / recovery circuit is used for receiving the wake-up instruction signal or the recovery instruction signal and generating a corresponding wake-up pulse signal or a recovery pulse signal based on the wake-up instruction signal or the recovery instruction signal so as to perform corresponding wake-up or fatigue recovery operation on the ferroelectric memory array according to the wake-up pulse signal or the recovery pulse signal. Therefore, the problems that the reliability of the existing hafnium oxide-based ferroelectric memory is seriously influenced by the ferroelectric fatigue effect, and the wake-up effect of the ferroelectric memory is easy to cause wrong reading and writing of data are solved.

The invention provides an epitaxial hafnium oxide-based ferroelectric capacitor and an atomic layer deposition preparation method thereof, and the preparation method comprises the steps: providing a substrate layer, and depositing a zirconia epitaxial buffer layer on the substrate layer through employing an atomic layer deposition technology; forming a hafnium oxide-based epitaxial ferroelectric layer on the zirconium oxide epitaxial buffer layer by adopting an atomic layer deposition process; photoresist is spin-coated on the hafnium oxide-based epitaxial ferroelectric layer, exposure and development are carried out, and the shape of a top electrode is defined; preparing a top electrode on the hafnium oxide-based epitaxial ferroelectric layer; and annealing by adopting a rapid annealing process to realize the ferroelectricity of the hafnium oxide-based epitaxial ferroelectric layer. According to the application, the zirconium oxide epitaxial buffer layer is arranged between the ferroelectric layer and the substrate layer, so that the hafnium oxide-based epitaxial ferroelectric layer grown through ALD presents a highly oriented epitaxial lattice structure, the leakage current of the hafnium oxide-based ferroelectric capacitor can be reduced, and the cycle performance of the capacitor is improved.

The invention provides a performance prediction method for a hafnium oxide semiconductor material structure, and relates to the technical field of semiconductor material research and development. The method comprises the following steps: performing global search in an Hf-O binary system by using crystal structure prediction software, determining the most stable two-dimensional Hf2O4 crystal structure, and further confirming the crystal configuration through structure optimization; calculating an Hf2O4 crystal structure by using density functional theory calculation software, and evaluating the dynamic, thermodynamic and mechanical stability of Hf2O4 by using a calculation result system; the electronic property of the Hf2O4 is obtained through further deep calculation, and the structural stability and semiconductor characteristics of the Hf2O4 are verified. According to the invention, through the first principle and the evolutionary algorithm calculation, the simulation calculation is used to replace the traditional trial-and-error experiment, and the novel semiconductor material with high reliability can be efficiently explored; a theoretical basis is provided for the design of a novel high-performance semiconductor material in advanced chip manufacturing, the research and development period can be expected to be remarkably shortened, and the cost can be reduced.

The present application discloses a phase field analysis method based on the influence of oxygen vacancies on hafnium oxide-based ferroelectric films, including: considering the influence of oxygen vacancy concentration on hafnium oxide-based ferroelectric films, determining the total energy equation; establishing the constitutive equations of various physical fields based on the influence of oxygen vacancies through the energy equation; determining the control equations of various physical fields; solving through the finite element method, deriving the weak form of the control equations of various physical fields based on the influence of oxygen vacancies, and establishing a phase field calculation model based on the influence of oxygen vacancies for hafnium oxide-based ferroelectric films according to the weak form of the equations, so as to simulate the domain structure cloud diagram and its phase transition law of polymorphic coexistence of hafnium oxide-based ferroelectric films under different oxygen vacancy concentrations. The present application can provide theoretical guidance on the influence of oxygen vacancies for experimenters during the experiment through the establishment of a calculation model, thereby effectively reducing the experimental cost, and having a preset range control value for the oxygen vacancy concentration used in the experiment.

The invention relates to the technical field of photoelectric devices, in particular to a negative capacitance tunneling phototransistor and a preparation method and application thereof. The negative capacitance tunneling phototransistor is of a structure combining a ferroelectric material and a low-dimensional semiconductor heterojunction material, the characteristics of the ferroelectric material are combined with the tunneling effect and the photoelectric characteristic of a low-dimensional semiconductor heterojunction, and a hafnium oxide-based ferroelectric gate dielectric is used for replacing a gate dielectric layer of a traditional phototransistor. A negative capacitance effect is provided in the grid structure of the negative capacitance tunneling phototransistor so as to improve the performance of the device; through the negative capacitance effect of the ferroelectric material, the electrical performance of the tunneling field effect transistor is enhanced, the switching ratio and the on-state current of the device are improved, the sub-threshold swing of the device is further reduced, and the photoelectric responsivity and the response speed of the device are improved at the same time. Due to the arrangement of the grid electrode and the low-dimensional semiconductor heterojunction, the purposes of ultralow subthreshold swing and no hysteresis are achieved. In addition, the device has the characteristics of good stability, simple structure, easy preparation and the like.