346 results about "Hafnium oxide" patented technology

The invention discloses a nickel-based alloy composite plate and a preparation method thereof, and belongs to the technical field of nickel-based alloys, the nickel-based alloy composite plate comprises a stainless steel bottom plate and a nickel-based alloy plate, and the nickel-based alloy plate comprises, by weight, 52-58 parts of nickel powder, 17-21 parts of molybdenum powder, 8-12 parts of copper powder, 7-9 parts of boron powder, 2-3 parts of modified hafnium carbide powder, 4-7 parts of an alloy reinforcing agent and 2-3 parts of a fluxing agent. The modified hafnium carbide prepared from hafnium oxide and nano carbon powder successfully replaces metal hafnium with high cost in the traditional process; and meanwhile, the actual adding proportion of the modified hafnium carbide in the nickel-based alloy plate is greatly reduced, the cost of industrial mass production is doubly reduced from the two aspects of raw material selection and dosage control, and the economic requirement of large-scale production is better met.

The invention discloses electronic-grade hafnium oxide and a preparation method and application thereof, and relates to the technical field of high-dielectric-constant materials, and the preparation method comprises the following steps: carrying out chlorination reaction on crushed coarse hafnium oxide and graphite powder to prepare coarse hafnium tetrachloride; purifying the crude hafnium tetrachloride by adopting a molten salt purification method and / or a hydrogenation purification method to prepare high-purity hafnium tetrachloride; the method comprises the following steps: introducing high-purity hafnium tetrachloride into a sublimation furnace, introducing oxygen and an AlCl3 gas-phase catalyst into the sublimation furnace, and oxidizing the high-purity hafnium tetrachloride into hafnium oxide particles and chlorine; and dechlorinating the hafnium oxide particles through a fluidized bed to obtain the electronic-grade hafnium oxide. The hafnium oxide prepared by the preparation method not only has electronic-grade ultra-high purity, but also overcomes various defects of synthesis by using hafnium tetrachloride water; and the technological process is simple, the production efficiency is high, and the production cost is low.

The present disclosure provides a new wet atomic layer etch (ALE) process for etching high-k dielectric materials. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching transition metal oxide dielectric materials in a cyclic wet ALE process. In the example embodiments provided herein, new etch chemistries and methods are provided for etching zirconium dioxide (ZrO2), hafnium dioxide (HfO2) and HfxZr(1-x)O2 dielectrics in a cyclic wet ALE process. However, the wet ALE techniques described herein are not strictly limited to the example materials discussed herein and can be applied to other transition metals and transition metal oxides.

The invention provides a hafnium oxide-based ferroelectric film annealing process with a low thermal budget and a hafnium oxide-based ferroelectric film, and relates to the field of ferroelectric films, the hafnium oxide-based ferroelectric film is subjected to multiple low-temperature rapid annealing cycles, and the hafnium oxide-based ferroelectric film annealing process comprises the following steps: heating to an annealing temperature of 400 DEG C at a heating rate of 10-80K / s, keeping the temperature for 15-120s, and cooling at a cooling rate of not less than 10K / s, and after cooling to room temperature, carrying out next annealing cycle. The internal defect distribution of the thin film is changed through repeated rapid annealing circulation; and multiple times of rapid cooling are introduced, so that multiple times of enhanced stress is generated in the thin film, the hafnium oxide phase change potential barrier is cooperatively regulated and controlled, conversion from a non-ferroelectric high-temperature tetragonal phase to a ferroelectric orthogonal phase is promoted, and the requirement for the high annealing temperature is avoided.

The invention discloses high-strength high-temperature-resistant fireproof industrial glass and a preparation method thereof, and relates to the technical field of glass manufacturing. The industrial glass is prepared from the following raw materials: silicon dioxide, boric oxide, aluminum oxide, sodium oxide, potassium oxide, niobium phosphate, a composite reinforcing component and a clarifying agent, the composite reinforcing component is prepared from hafnium oxide, gadolinium oxide and zinc oxide; the clarifying agent is obtained by mixing cerium dioxide and tin oxide. The preparation method of the industrial glass comprises the following steps: preparing functional components, melting glass, forming a glass substrate, and preparing the industrial glass. The prepared industrial glass is high in strength, good in high-temperature stability and excellent in fireproof performance.

A preparation method of porous hafnium carbide superhigh-temperature ceramic is characterized by comprising the following steps: dispersing graphene oxide in a solvent to form a graphene oxide dispersion liquid, mixing a monomer hafnium source solution with the graphene oxide dispersion liquid, and carrying out hydrothermal treatment on a hafnium oxide carbon precursor network structure to obtain the porous hafnium carbide superhigh-temperature ceramic. The organic-inorganic hybrid precursor is subjected to two-stage heat treatment, the first stage is inorganic treatment, the second stage is carbon thermal reduction reaction, and the porous hafnium carbide ultrahigh-temperature ceramic material is obtained. Graphene oxide is used as a structure-directing agent and an in-situ carbon source, a monomer hafnium source is uniformly anchored on the surface of a GO sheet layer on the molecular scale, an organic-inorganic hybrid precursor is formed, after the precursor is subjected to hydrothermal crosslinking, Hf species and a carbon skeleton are highly mixed on the nanoscale, and the Hf / GO composite material is obtained. And the subsequent carbon thermal reduction reaction can be efficiently completed in a low-temperature interval of 1300-1450 DEG C.

The disclosed and claimed subject matter relates to (1) a process for performing thermal atomic layer etching (ALE) of films that include ZrO2, HfO2, (Hf—Zr)O2 alloy or similar materials which does not require the use of plasmas or corrosive halogenating chemistries and (2) a metal-insulator-metal capacitor (MIMcap) with unique properties enabled by a unique dielectric processing method.

A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

The invention relates to the technical field of hafnium oxide preparation, in particular to a method for preparing hafnium oxide with ultralow iron content, which comprises the following steps: based on N235 extraction separation in a hydrochloric acid system, crushing hafnium oxide raw stone, performing coarse grinding to obtain hafnium oxide powder, then sequentially performing alkali fusion decomposition treatment and acid leaching impurity removal treatment to obtain a zirconium-hafnium mixed solution, and then performing vacuum drying on the zirconium-hafnium mixed solution to obtain the hafnium oxide with ultralow iron content. The preparation method comprises the following steps: taking hafnium as a raw material, carrying out extraction and back extraction to obtain a hafnium-enriched solution, treating the hafnium-enriched solution with ion exchange resin to obtain a high-purity hafnium solution, finally adding saturated ammonia water, filtering and washing the obtained precipitate, drying, and firing to obtain the hafnium oxide with ultralow iron content. According to the invention, while zirconium and hafnium separation is realized, a small amount of contained metal cations, especially iron ions, are fully removed, and the iron content is reduced, so that hafnium oxide with ultralow iron content is obtained.

The present invention discloses an abnormal thermal quenching near-infrared fluorescent ceramic and its preparation method and application. The chemical formula of the fluorescent ceramic is: (Lu 0.34+z Y 0.66‑y‑z Sc y )3(Sc 0.85‑x Al 0.15 Cr x )2Al3O 12 , 0.0005≤ x ≤0.02, x : y =1:(5‑10), x : z =1:(10‑20). y Sc 3+ The mole percentage of dodecahedral sites occupied, x Cr ions occupy the octahedron Sc 3+ The molar percentage of the lattice site. z is the Lu in the dodecahedron 3+ The molar percentage of the metering control. The ceramic green body is formed and sintered by using the acrylamide gel injection molding method combined with high temperature solid phase reaction. The luminescent center ion in the ceramic of the present invention presents a +3 valence state under the influence of the matrix microenvironment regulator (calcium carbonate, magnesium oxide and zirconium oxide, silicon dioxide, hafnium dioxide). The excitation peak of the ceramic is between 430nm-460nm, the half-height width is between 90nm-130nm, and the half-height width is between 150nm-160nm. o The luminous intensity at 200°C is 105%-165% of the room temperature. o The luminescence intensity at 400°C is 130%-200% of that at room temperature. When excited by a 430-460 nm excitation source, the emission wavelength ranges from 650 nm to 900 nm. The ceramic preparation process is simple, and the resulting anomalous thermally quenched near-infrared fluorescent ceramic is suitable for high-power near-infrared imaging and detection.

The invention relates to a high-performance hafnium-based ultrahigh-temperature ceramic-based composite material and a preparation method thereof. The method comprises the following steps: depositing pyrolytic carbon on the carbon fiber surface of a carbon fiber preform through a CVD (Chemical Vapor Deposition) method; preparing a hafnium oxide interface layer on the surface of the pyrolytic carbon through an atomic layer deposition method, and performing ultra-fast annealing treatment to form a pyrolytic carbon-hafnium oxide composite interface layer; carrying out a reaction with a matrix containing a pyrolytic carbon-hafnium oxide composite interface layer through an impregnation pyrolysis method; a hafnium carbide coating is prepared on the surface of the composite material matrix through a CVD method; and preparing a hafnium oxide coating on the surface of the hafnium carbide coating through an atomic layer deposition method, and carrying out ultra-fast annealing treatment to prepare the high-performance hafnium-based ultra-high-temperature ceramic-based composite material. According to the preparation method, the pyrolytic carbon-hafnium oxide composite interface layer is prepared by adopting an atomic layer deposition process and depending on ultra-fast annealing treatment, and meanwhile, the hafnium carbide-hafnium oxide composite coating is prepared, so that the mechanical property of the composite material in a high-temperature aerobic environment is remarkably improved.

The application discloses a method for constructing oxygen defect regulation of hafnium dioxide 5d track electron, comprising the following steps: S1, using a hydrothermal method, by regulating the oxygen partial pressure in the preparation process, preparing hafnium oxide nanocrystals with different oxygen defects and calculating the oxygen defect concentration; S2, according to the first principle, calculating and constructing a hafnium dioxide crystal model under a microstructure, and modifying the corresponding model according to the experimental results of step S1; S3, according to the hafnium dioxide with oxygen defects obtained in step S2, calculating the total state density and the partial state density of the near-oxygen vacancy end hafnium atom and the far-oxygen vacancy end hafnium atom, respectively, calculating the proportion of the d atom track, and establishing a method for regulating the hafnium dioxide 5d track electron.

The invention discloses a phase field simulation and analysis method for an anisotropic domain wall of a hafnium oxide-based ferroelectric film, and solves the problems that an existing method is difficult to reflect the influence of the anisotropy of the domain wall on domain evolution and polarization overturning dynamics and is associated with macroscopic electrical properties. Comprising the following steps: 1) determining a total energy equation and correlation coefficients; 2) establishing a gradient energy density equation based on domain wall anisotropy; 3) constructing and solving a control equation; 4) visualizing a simulation result; and 5) domain evolution and polarization flipping characteristics under different voltages are analyzed. According to the method, accurate simulation of the anisotropic domain wall and quantitative analysis of the migration behavior of the domain wall are realized, guidance is provided for experimenters to understand the influence rule of the anisotropic domain wall on the domain overturning characteristic and the macroscopic electrical property, the experiment cost is reduced, and the experiment efficiency is improved.

An X-ray target (10) comprising: a thermally conductive substrate (20) having a surface (22); and a plurality of structures (30) which are separated from one another, on or embedded in at least a portion of the surface (22), each of the at least two structures (30) of the plurality of structures (30) comprising: a thermally conductive first material (32) in thermal communication with the substrate (20), and at least one layer (40) over the first material (32), wherein the at least one layer (40) comprises at least one second material (42) that is different from the first material (32), wherein the at least one second material (42) is configured to generate X-rays when irradiated by electrons, wherein the first materials (32) of the at least two structures (30) are separated from each other and the at least one second material (42) of the at least two structures (30) are separated from each other and different from each other, and wherein the at least one layer (40) further comprises at least one third material (44) between the first material (32) and the at least one second material (42), wherein the at least one third material (44) is different from the first material (32) and the at least one second material (42), and the at least one third material (44) has a thickness between 2 nanometers and 50 nanometers and / or the at least one third material (44) comprises at least one of the following materials: titanium nitride, iridium, chromium, beryllium and hafnium oxide.

The invention relates to an on-chip reconfigurable ferroelectric memory wake-up recovery system and method, and the system comprises a ferroelectric memory array which is used for determining the current working state of a plurality of ferroelectric memory units in the ferroelectric memory array, and generating a corresponding wake-up instruction signal or a recovery instruction signal according to the current working state; and the reconfigurable wake-up / recovery circuit is used for receiving the wake-up instruction signal or the recovery instruction signal and generating a corresponding wake-up pulse signal or a recovery pulse signal based on the wake-up instruction signal or the recovery instruction signal so as to perform corresponding wake-up or fatigue recovery operation on the ferroelectric memory array according to the wake-up pulse signal or the recovery pulse signal. Therefore, the problems that the reliability of the existing hafnium oxide-based ferroelectric memory is seriously influenced by the ferroelectric fatigue effect, and the wake-up effect of the ferroelectric memory is easy to cause wrong reading and writing of data are solved.

The invention provides an epitaxial hafnium oxide-based ferroelectric capacitor and an atomic layer deposition preparation method thereof, and the preparation method comprises the steps: providing a substrate layer, and depositing a zirconia epitaxial buffer layer on the substrate layer through employing an atomic layer deposition technology; forming a hafnium oxide-based epitaxial ferroelectric layer on the zirconium oxide epitaxial buffer layer by adopting an atomic layer deposition process; photoresist is spin-coated on the hafnium oxide-based epitaxial ferroelectric layer, exposure and development are carried out, and the shape of a top electrode is defined; preparing a top electrode on the hafnium oxide-based epitaxial ferroelectric layer; and annealing by adopting a rapid annealing process to realize the ferroelectricity of the hafnium oxide-based epitaxial ferroelectric layer. According to the application, the zirconium oxide epitaxial buffer layer is arranged between the ferroelectric layer and the substrate layer, so that the hafnium oxide-based epitaxial ferroelectric layer grown through ALD presents a highly oriented epitaxial lattice structure, the leakage current of the hafnium oxide-based ferroelectric capacitor can be reduced, and the cycle performance of the capacitor is improved.

The invention provides a performance prediction method for a hafnium oxide semiconductor material structure, and relates to the technical field of semiconductor material research and development. The method comprises the following steps: performing global search in an Hf-O binary system by using crystal structure prediction software, determining the most stable two-dimensional Hf2O4 crystal structure, and further confirming the crystal configuration through structure optimization; calculating an Hf2O4 crystal structure by using density functional theory calculation software, and evaluating the dynamic, thermodynamic and mechanical stability of Hf2O4 by using a calculation result system; the electronic property of the Hf2O4 is obtained through further deep calculation, and the structural stability and semiconductor characteristics of the Hf2O4 are verified. According to the invention, through the first principle and the evolutionary algorithm calculation, the simulation calculation is used to replace the traditional trial-and-error experiment, and the novel semiconductor material with high reliability can be efficiently explored; a theoretical basis is provided for the design of a novel high-performance semiconductor material in advanced chip manufacturing, the research and development period can be expected to be remarkably shortened, and the cost can be reduced.

The invention provides a dielectric filler-doped solid electrolyte, a lithium metal battery and a preparation method, the dielectric filler-doped solid electrolyte comprises a polyether matrix, and the polyether matrix is formed by dispersing a lithium salt and a dielectric filler, the dielectric filler is two or more of barium titanate (BaTiO3), strontium titanate (SrTiO3), zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), cerium oxide (CeO2), zinc oxide (ZnO), lanthanum oxide (La2O3), aluminum oxide (Al2O3), tantalum oxide (Ta2O5) and yttrium oxide (Y2O3).

The invention discloses a hafnium oxide-based RRAM with a niobium oxide thermal enhancement layer and application, and belongs to the field of semiconductor memory devices. The hafnium oxide-based RRAM with the niobium oxide thermal enhancement layer sequentially comprises a top electrode, a niobium oxide layer, an HfO2 layer, an HfOx layer and a bottom electrode from top to bottom, and the niobium oxide thermal enhancement layer is inserted into the hafnium oxide-based RRAM, so that the forming voltage and the working temperature can be reduced, a storage window is also enlarged, and in the forming process, the storage temperature of the storage window can be increased. The growth direction of the conductive filament is effectively controlled; and the breaking point of the conductive filament can be effectively regulated and controlled in the reset process.

This invention discloses a tunable broadband photodetector based on a Schottky junction, comprising: an N-type silicon substrate, a gate ferroelectric dielectric, a gate electrode, a source electrode, and a drain electrode; the source electrode, gate ferroelectric dielectric, and drain electrode are sequentially disposed on the N-type silicon substrate, and the gate electrode is disposed on the gate ferroelectric dielectric; the gate ferroelectric dielectric is made of hafnium oxide, a ferroelectric material, and the gate ferroelectric dielectric and the gate electrode together constitute a ferroelectric gate; the gate electrode is made of a transparent metal oxide. This invention utilizes silicon CMOS manufacturing technology and a simple device structure, greatly reducing the fabrication difficulty of silicon-based infrared detectors, and by leveraging the characteristic that the polarization intensity of ferroelectrics weakens under infrared light, extends the detection long-wavelength limit of silicon-based infrared detectors to the near-infrared band. This invention also discloses a method for fabricating and applying a tunable broadband photodetector based on a Schottky junction.

The invention discloses a preparation method of high-purity hafnium oxide, and relates to the technical field of hafnium oxide preparation, and the preparation method comprises the following steps: S1, dissolving raw materials; s2, solution pretreatment; s3, extracting and separating; s4, back extraction; s5, precipitating and calcining; and S6, waste liquid recovery. According to the preparation method of the high-purity hafnium oxide, by optimizing extraction agent selection, solution condition control and subsequent treatment steps, target metal ions are separated from the solution through the selective extraction agent, impurities can be effectively removed, the hafnium oxide with high purity and excellent performance can be prepared, the method has the advantages of being easy to operate, high in raw material adaptability, environmentally friendly and the like, and the method is suitable for industrial production. The device has a wide application prospect, and the second nozzle and the first nozzle alternately spray water through switches of the second electronic valve and the first electromagnetic valve, so that the surface of the stirring paddle and the inner surface of the kettle body can be comprehensively flushed, the interior of the kettle body does not need to be opened and exposed, manual operation is not needed, and the manual cleaning cost is greatly reduced.

Apparatuses, systems, and techniques related to material systems for metal-insulator-metal (MIM) capacitors over a device layer including field effect transistors are described. The insulator of the MIM capacitor is a superlattice of interleaved first and second materials. The first material is hafnium or zirconium oxide, and the second material includes aluminum such that the superlattice has a relatively low aluminum concentration. The MIM capacitor is over a device layer including a transistor having a gate dielectric including an oxide material.

The invention discloses an ultraviolet response enhancing structure applied to a CMOS (Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method of the ultraviolet response enhancing structure, belonging to the technical field of ultraviolet photoelectric detection. The light emitting diode structurally comprises an anti-reflection film and a P-type silicon epitaxial layer, the anti-reflection film and the P-type silicon epitaxial layer are sequentially stacked in the direction of incident light, a clamping photodiode is formed at the end, away from the anti-reflection film, of the P-type silicon epitaxial layer, and a p + layer is doped at the end, close to the anti-reflection film, of the P-type silicon epitaxial layer; the anti-reflection film comprises a SiO2 layer, an Al2O3 layer and an HfO2 layer, and the SiO2 layer, the Al2O3 layer and the HfO2 layer are sequentially stacked in the direction of incident light; the N well region and the P-type heavily-doped clamping layer are sequentially stacked on the clamping photodiode in the direction of incident light. According to the structure, the defect and trap concentration of an interface of silicon and hafnium oxide are reduced, so that dark current is reduced; the narrower surface P-type doping can reduce the recombination area, thereby enhancing the collection of ultraviolet charges.

The embodiment of the invention discloses a hafnium oxide-based ferroelectric film doped in a calcium gap position and a preparation method. The method comprises the following steps: preparing a target material: mixing hafnium oxide and calcium oxide according to a set ratio, and grinding to obtain mixed raw material powder; calcining the mixed raw material powder for the first time; grinding the mixed raw material powder calcined for the first time, and performing compression molding to obtain a target material biscuit; calcining the target material biscuit for the second time to obtain the hafnium oxide-based ceramic target material doped in the calcium gap position; a commercial bottom electrode La0. 7Sr0. 3MnO3 target material is used as a first sputtering target, sputtering is carried out under a first set condition, and an LSMO bottom electrode thin film is obtained; taking the calcium gap position doped hafnium oxide-based ceramic target material as a second sputtering target, sputtering under a second set condition, and epitaxially growing on the LSMO bottom electrode film to form a calcium gap position doped hafnium oxide-based ferroelectric film; the chemical composition of the hafnium oxide-based ferroelectric film doped in the calcium gap position is CaxHf (1-x) O (2-x), x is 0.01-0.05, and calcium ions occupy the gap position of a hafnium oxide crystal lattice.

The invention belongs to the technical field of target materials, and discloses a multi-element doped indium germanium oxide ceramic target material and a preparation method thereof. The ceramic target material comprises indium oxide, germanium oxide and doped oxide, and the doped oxide is one or two of cerium oxide, hafnium oxide or titanium oxide; the preparation method comprises the following steps: mixing In2O3 powder, GeO2 and doped oxide powder, carrying out ball milling, drying, grinding and sieving on the mixed powder to obtain mixed oxide powder, sequentially carrying out compression molding and cold isostatic pressing on the mixed oxide powder to obtain a target material green body, putting the target material green body in an oxygen atmosphere, and carrying out sintering to obtain the target material. A multi-element doped indium germanium oxide ceramic target material is obtained by using a multi-stage sintering method; by adjusting the doping elements in the target material, the proportion of the doping elements and the staged sintering temperature and time, the density and the conductivity of the target material can be remarkably improved.

The present invention discloses a hafnium oxide ceramic, its preparation method, and application, belonging to the technical field of hafnium oxide ceramic preparation. The preparation method comprises the following steps: taking hafnium oxide powder with a purity of ≥99.9% and a binder, melting the binder, and then mixing the dried hafnium oxide powder and the binder to form a slurry; hot pressing the slurry into a blank, cooling it to form a blank, and then subjecting the blank to a gradient temperature pre-sintering process to remove the binder to form a green blank; and subjecting the green blank to a gradient temperature sintering process to form a green blank. The hafnium oxide ceramic prepared using this method does not introduce other impurities, has high purity and density, and is free of defects such as deformation, bending, cracking, and defects.

The invention provides a method for recovering a hafnium oxide-based ferroelectric erasing and writing mark phenomenon, which relates to the field of ferroelectric films, and comprises the step of applying bipolar electric pulses or unipolar electric pulses with the polarization direction opposite to that of data erasing and writing electric pulses to a hafnium oxide-based ferroelectric film device which is subjected to data erasing and writing after the electric pulses are applied to the hafnium oxide-based ferroelectric film device. By means of the method, the imprint offset field caused by data erasing and writing can be effectively recovered.

This invention discloses an electrode-free constrained annealed hafnium oxide-based ferroelectric thin film, its preparation method, and its application. The method employs ALD technology to alternately deposit a predetermined number of hafnium oxide layers on a substrate. 0.5 Zr 0.5 O2 thin film and a layer of Al2O3 thin film were used to obtain Al with different doping concentrations. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films, where x represents the number of Al2O3 layers deposited using ALD, and y represents the number of Hf layers deposited using ALD. 0.5 Zr 0.5 The number of O2 layers; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin films are subjected to high-temperature annealing to obtain Al. x -(Hf) 0.5 Zr 0.5 O2) y Ferroelectric thin film samples; for the obtained Al x -(Hf) 0.5 Zr 0.5 O2) y A hafnium oxide-based ferroelectric thin film was obtained by depositing a top electrode and a bottom electrode onto a ferroelectric thin film sample. This invention improves the performance of annealed ferroelectric thin films without electrode constraint, deepens the understanding of the ferroelectric principle of HfO2 thin films, and promotes the development of the field of novel practical ferroelectric thin films.

The phase structure evolution phase field analysis method in the annealing and crystallization process of the amorphous hafnium oxide-based ferroelectric film comprises the following steps: S1, setting a sequence parameter xi according to the evolution process from an amorphous phase to a crystal phase in the annealing process, and setting a sequence parameter eta according to the process of the crystal phase and the crystal phase; s2, a phase field theoretical model is established, the total free energy is the sum of the free energy of the sequence parameter xi and the free energy of the sequence parameter eta, and the free density in the free energy of the sequence parameter eta is obtained through coupling of the sequence parameter xi and the sequence parameter eta; s3, deducing a weak form of the control equation; and S4, compiling the weak form equation into COMSOL finite element software, solving and analyzing the phase structure in the annealing crystallization process of the thin film. According to the method, the sequence parameter xi representing the transformation process from the amorphous phase to the crystalline phase is introduced and coupled with the sequence parameter eta to construct a new free energy equation and a new control equation, the weak form of the control equation is deduced, and the phase structure and the evolution rule of the hafnium oxide-based ferroelectric film at different annealing moments can be dynamically reproduced.

The application provides a ferroelectric thin film with a two-dimensional layered electrode and a preparation method thereof. The ferroelectric thin film comprises a ferroelectric hafnium oxide thin film and a two-dimensional layered calcium nitride electrode arranged on the ferroelectric hafnium oxide thin film. The calcium nitride of the application has excellent in-plane lattice matching with hafnium oxide (111), and the lattice mismatch degree is extremely low, which is beneficial to realize high-quality epitaxial growth of the heterostructure and provides a structural basis for device manufacturing. The calcium nitride of the application can form stable chemical bonds (such as Hf-N and O-Ca) with hafnium oxide at the interface, can effectively enhance the interface bonding force, and improve the structural stability of the device. The calcium nitride of the application can significantly inhibit the depolarization field in the hafnium oxide thin film, restore and exceed the ferroelectric polarization intensity of the hafnium oxide bulk, and significantly improve the ferroelectric performance of the hafnium oxide.