435 results about "Hafnium oxide" patented technology

The invention discloses a nickel-based alloy composite plate and a preparation method thereof, and belongs to the technical field of nickel-based alloys, the nickel-based alloy composite plate comprises a stainless steel bottom plate and a nickel-based alloy plate, and the nickel-based alloy plate comprises, by weight, 52-58 parts of nickel powder, 17-21 parts of molybdenum powder, 8-12 parts of copper powder, 7-9 parts of boron powder, 2-3 parts of modified hafnium carbide powder, 4-7 parts of an alloy reinforcing agent and 2-3 parts of a fluxing agent. The modified hafnium carbide prepared from hafnium oxide and nano carbon powder successfully replaces metal hafnium with high cost in the traditional process; and meanwhile, the actual adding proportion of the modified hafnium carbide in the nickel-based alloy plate is greatly reduced, the cost of industrial mass production is doubly reduced from the two aspects of raw material selection and dosage control, and the economic requirement of large-scale production is better met.

According to the hafnium oxide-based ferroelectric crystal phase modulation method based on the superlattice structure, each hafnium oxide layer in a hafnium oxide-based ferroelectric film is designed to be formed by stacking m hafnium oxide sub-layers, and each doped element layer is designed to be formed by stacking n doped element sub-layers; the hafnium oxide layer and the doping element layer are stacked to form a superlattice structure, and the hafnium oxide-based ferroelectric crystal phase is modulated as o phase dominant, t phase dominant or o / t mixed phase by determining the values of m and n, and the method is as follows: by volume, when the content of o phase is greater than 60%, o phase dominant, m is greater than or equal to 2 and less than or equal to 10, and n is 1.5 * m; when the content of the t phase is greater than 60%, the t phase is dominant, m is greater than or equal to 20 and less than or equal to 30, and n is equal to 2.5 * m; when the difference between the content of the o phase and the content of the t phase does not exceed 20%, the phase is an o / t mixed phase, m is more than 10 and less than 20, and n is equal to 2 * m; wherein m is an even number. According to the invention, the crystalline phase of the hafnium oxide-based ferroelectric film can be modulated, the electric leakage is extremely low, and the reliability is high.

The invention discloses electronic-grade hafnium oxide and a preparation method and application thereof, and relates to the technical field of high-dielectric-constant materials, and the preparation method comprises the following steps: carrying out chlorination reaction on crushed coarse hafnium oxide and graphite powder to prepare coarse hafnium tetrachloride; purifying the crude hafnium tetrachloride by adopting a molten salt purification method and / or a hydrogenation purification method to prepare high-purity hafnium tetrachloride; the method comprises the following steps: introducing high-purity hafnium tetrachloride into a sublimation furnace, introducing oxygen and an AlCl3 gas-phase catalyst into the sublimation furnace, and oxidizing the high-purity hafnium tetrachloride into hafnium oxide particles and chlorine; and dechlorinating the hafnium oxide particles through a fluidized bed to obtain the electronic-grade hafnium oxide. The hafnium oxide prepared by the preparation method not only has electronic-grade ultra-high purity, but also overcomes various defects of synthesis by using hafnium tetrachloride water; and the technological process is simple, the production efficiency is high, and the production cost is low.

In accordance with some embodiments of the present disclosure, a memory device is provided. The memory device may include a first electrode, a ferroelectric layer fabricated on the first electrode, and a second electrode fabricated on the ferroelectric layer. The ferroelectric layer includes a plurality of ferroelectric films and a plurality of interface layers stacked alternately. Each of the ferroelectric films comprises at least one ferroelectric material, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), zirconium-doped hafnium oxide (Hf1-xZrxO2), scandium-doped aluminum nitride (Al1-xScxN), titanates (BaTiO3), niobates (LiNbO3), tantalates (NaTaO3), etc. Each of the interface layers comprises at least one dielectric material that is more chemically stable than the ferroelectric material, such as aluminum oxide.

The present disclosure provides a new wet atomic layer etch (ALE) process for etching high-k dielectric materials. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching transition metal oxide dielectric materials in a cyclic wet ALE process. In the example embodiments provided herein, new etch chemistries and methods are provided for etching zirconium dioxide (ZrO2), hafnium dioxide (HfO2) and HfxZr(1-x)O2 dielectrics in a cyclic wet ALE process. However, the wet ALE techniques described herein are not strictly limited to the example materials discussed herein and can be applied to other transition metals and transition metal oxides.

The invention provides a hafnium oxide-based ferroelectric film annealing process with a low thermal budget and a hafnium oxide-based ferroelectric film, and relates to the field of ferroelectric films, the hafnium oxide-based ferroelectric film is subjected to multiple low-temperature rapid annealing cycles, and the hafnium oxide-based ferroelectric film annealing process comprises the following steps: heating to an annealing temperature of 400 DEG C at a heating rate of 10-80K / s, keeping the temperature for 15-120s, and cooling at a cooling rate of not less than 10K / s, and after cooling to room temperature, carrying out next annealing cycle. The internal defect distribution of the thin film is changed through repeated rapid annealing circulation; and multiple times of rapid cooling are introduced, so that multiple times of enhanced stress is generated in the thin film, the hafnium oxide phase change potential barrier is cooperatively regulated and controlled, conversion from a non-ferroelectric high-temperature tetragonal phase to a ferroelectric orthogonal phase is promoted, and the requirement for the high annealing temperature is avoided.

The invention discloses high-strength high-temperature-resistant fireproof industrial glass and a preparation method thereof, and relates to the technical field of glass manufacturing. The industrial glass is prepared from the following raw materials: silicon dioxide, boric oxide, aluminum oxide, sodium oxide, potassium oxide, niobium phosphate, a composite reinforcing component and a clarifying agent, the composite reinforcing component is prepared from hafnium oxide, gadolinium oxide and zinc oxide; the clarifying agent is obtained by mixing cerium dioxide and tin oxide. The preparation method of the industrial glass comprises the following steps: preparing functional components, melting glass, forming a glass substrate, and preparing the industrial glass. The prepared industrial glass is high in strength, good in high-temperature stability and excellent in fireproof performance.

The invention discloses a La-doped hafnium oxide-based ferroelectric film, a capacitor and a preparation method of the La-doped hafnium oxide-based ferroelectric film, the La-doped hafnium oxide-based ferroelectric film is of a single (111)-oriented orthorhombic phase structure, and the preparation method comprises the following steps: firstly, epitaxially growing a buffer layer with consistent orientation on a (111)-oriented perovskite substrate, and then epitaxially growing a La-doped hafnium oxide-based ferroelectric film layer on the surface of the buffer layer. The La-doped hafnium oxide-based ferroelectric thin film is obtained by the method, the thickness of the thin film is accurately regulated and controlled, the performance of the La-doped hafnium oxide-based ferroelectric thin film is optimized, and the requirement of an electronic device for a high-performance ferroelectric thin film is met. The laser pulse deposition epitaxial La-doped hafnium oxide-based ferroelectric film provided by the invention is high in purity and good in film forming uniformity; meanwhile, the operation process is simple, low in energy consumption, free of pollution and easy to industrialize.

A preparation method of porous hafnium carbide superhigh-temperature ceramic is characterized by comprising the following steps: dispersing graphene oxide in a solvent to form a graphene oxide dispersion liquid, mixing a monomer hafnium source solution with the graphene oxide dispersion liquid, and carrying out hydrothermal treatment on a hafnium oxide carbon precursor network structure to obtain the porous hafnium carbide superhigh-temperature ceramic. The organic-inorganic hybrid precursor is subjected to two-stage heat treatment, the first stage is inorganic treatment, the second stage is carbon thermal reduction reaction, and the porous hafnium carbide ultrahigh-temperature ceramic material is obtained. Graphene oxide is used as a structure-directing agent and an in-situ carbon source, a monomer hafnium source is uniformly anchored on the surface of a GO sheet layer on the molecular scale, an organic-inorganic hybrid precursor is formed, after the precursor is subjected to hydrothermal crosslinking, Hf species and a carbon skeleton are highly mixed on the nanoscale, and the Hf / GO composite material is obtained. And the subsequent carbon thermal reduction reaction can be efficiently completed in a low-temperature interval of 1300-1450 DEG C.

The invention discloses a flexible multi-valued hafnium oxide-based ferroelectric capacitor and a preparation method thereof, the flexible multi-valued hafnium oxide-based ferroelectric capacitor still has stable ferroelectricity in a bending deformation state, can realize 32 storage states, not only meets the requirement of storage pool calculation for multi-valued storage, but also effectively solves the problem that a ferroelectric material is difficult to maintain stability under strain in the wearable field.

The disclosed and claimed subject matter relates to (1) a process for performing thermal atomic layer etching (ALE) of films that include ZrO2, HfO2, (Hf—Zr)O2 alloy or similar materials which does not require the use of plasmas or corrosive halogenating chemistries and (2) a metal-insulator-metal capacitor (MIMcap) with unique properties enabled by a unique dielectric processing method.

A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

The invention relates to the technical field of hafnium oxide preparation, in particular to a method for preparing hafnium oxide with ultralow iron content, which comprises the following steps: based on N235 extraction separation in a hydrochloric acid system, crushing hafnium oxide raw stone, performing coarse grinding to obtain hafnium oxide powder, then sequentially performing alkali fusion decomposition treatment and acid leaching impurity removal treatment to obtain a zirconium-hafnium mixed solution, and then performing vacuum drying on the zirconium-hafnium mixed solution to obtain the hafnium oxide with ultralow iron content. The preparation method comprises the following steps: taking hafnium as a raw material, carrying out extraction and back extraction to obtain a hafnium-enriched solution, treating the hafnium-enriched solution with ion exchange resin to obtain a high-purity hafnium solution, finally adding saturated ammonia water, filtering and washing the obtained precipitate, drying, and firing to obtain the hafnium oxide with ultralow iron content. According to the invention, while zirconium and hafnium separation is realized, a small amount of contained metal cations, especially iron ions, are fully removed, and the iron content is reduced, so that hafnium oxide with ultralow iron content is obtained.

The present invention discloses an abnormal thermal quenching near-infrared fluorescent ceramic and its preparation method and application. The chemical formula of the fluorescent ceramic is: (Lu 0.34+z Y 0.66‑y‑z Sc y )3(Sc 0.85‑x Al 0.15 Cr x )2Al3O 12 , 0.0005≤ x ≤0.02, x : y =1:(5‑10), x : z =1:(10‑20). y Sc 3+ The mole percentage of dodecahedral sites occupied, x Cr ions occupy the octahedron Sc 3+ The molar percentage of the lattice site. z is the Lu in the dodecahedron 3+ The molar percentage of the metering control. The ceramic green body is formed and sintered by using the acrylamide gel injection molding method combined with high temperature solid phase reaction. The luminescent center ion in the ceramic of the present invention presents a +3 valence state under the influence of the matrix microenvironment regulator (calcium carbonate, magnesium oxide and zirconium oxide, silicon dioxide, hafnium dioxide). The excitation peak of the ceramic is between 430nm-460nm, the half-height width is between 90nm-130nm, and the half-height width is between 150nm-160nm. o The luminous intensity at 200°C is 105%-165% of the room temperature. o The luminescence intensity at 400°C is 130%-200% of that at room temperature. When excited by a 430-460 nm excitation source, the emission wavelength ranges from 650 nm to 900 nm. The ceramic preparation process is simple, and the resulting anomalous thermally quenched near-infrared fluorescent ceramic is suitable for high-power near-infrared imaging and detection.

The invention relates to a high-performance hafnium-based ultrahigh-temperature ceramic-based composite material and a preparation method thereof. The method comprises the following steps: depositing pyrolytic carbon on the carbon fiber surface of a carbon fiber preform through a CVD (Chemical Vapor Deposition) method; preparing a hafnium oxide interface layer on the surface of the pyrolytic carbon through an atomic layer deposition method, and performing ultra-fast annealing treatment to form a pyrolytic carbon-hafnium oxide composite interface layer; carrying out a reaction with a matrix containing a pyrolytic carbon-hafnium oxide composite interface layer through an impregnation pyrolysis method; a hafnium carbide coating is prepared on the surface of the composite material matrix through a CVD method; and preparing a hafnium oxide coating on the surface of the hafnium carbide coating through an atomic layer deposition method, and carrying out ultra-fast annealing treatment to prepare the high-performance hafnium-based ultra-high-temperature ceramic-based composite material. According to the preparation method, the pyrolytic carbon-hafnium oxide composite interface layer is prepared by adopting an atomic layer deposition process and depending on ultra-fast annealing treatment, and meanwhile, the hafnium carbide-hafnium oxide composite coating is prepared, so that the mechanical property of the composite material in a high-temperature aerobic environment is remarkably improved.

The application discloses a method for constructing oxygen defect regulation of hafnium dioxide 5d track electron, comprising the following steps: S1, using a hydrothermal method, by regulating the oxygen partial pressure in the preparation process, preparing hafnium oxide nanocrystals with different oxygen defects and calculating the oxygen defect concentration; S2, according to the first principle, calculating and constructing a hafnium dioxide crystal model under a microstructure, and modifying the corresponding model according to the experimental results of step S1; S3, according to the hafnium dioxide with oxygen defects obtained in step S2, calculating the total state density and the partial state density of the near-oxygen vacancy end hafnium atom and the far-oxygen vacancy end hafnium atom, respectively, calculating the proportion of the d atom track, and establishing a method for regulating the hafnium dioxide 5d track electron.

The invention discloses a phase field simulation and analysis method for an anisotropic domain wall of a hafnium oxide-based ferroelectric film, and solves the problems that an existing method is difficult to reflect the influence of the anisotropy of the domain wall on domain evolution and polarization overturning dynamics and is associated with macroscopic electrical properties. Comprising the following steps: 1) determining a total energy equation and correlation coefficients; 2) establishing a gradient energy density equation based on domain wall anisotropy; 3) constructing and solving a control equation; 4) visualizing a simulation result; and 5) domain evolution and polarization flipping characteristics under different voltages are analyzed. According to the method, accurate simulation of the anisotropic domain wall and quantitative analysis of the migration behavior of the domain wall are realized, guidance is provided for experimenters to understand the influence rule of the anisotropic domain wall on the domain overturning characteristic and the macroscopic electrical property, the experiment cost is reduced, and the experiment efficiency is improved.

A 3D semiconductor device, the device including: a first level including a first single crystal layer and including first transistors each of which includes a single crystal channel; a first metal layer; a second metal layer overlaying the first metal layer; a second level including second transistors and overlaying the second metal layer, each of first memory cells include at least one second transistor; a third level including third transistors and overlaying the second level; a fourth level including fourth transistors and overlaying the third level, each of second memory cells include at least one fourth transistor, where at least one of the second transistors includes a metal gate, where the first level includes memory control circuits which control writing to the second memory cells, and at least one of the second transistors includes a hafnium oxide gate dielectric.

The invention discloses a doped hafnium oxide-based ferroelectric film based on doping distribution regulation and control and a preparation method and application thereof, an x-y-x structural unit is selected according to the doping concentration, an ALD technology is repeatedly adopted on a substrate to obtain [(Hf0. 5Zr0. 5O2) y-Alx-(Hf0. 5Zr0. 5O2) y] z ferroelectric films with different doping concentrations, x is the number of cycles of a dopant, y is the number of cycles of the dopant, y is the number of cycles of the dopant, y is the number of cycles of the dopant, y is the number of cycles of the dopant, and z is the number of cycles of the dopant. Y is the total number of cycles of hafnium oxide and zirconium oxide, z is the number of repetitions of an x-y-x structural unit, and the doping concentration of the ferroelectric film is x / 2y; a top electrode and a bottom electrode are plated on a [(Hf < 0.5 > Zr < 0.5 > O < 2 >) < y >-Al < x >-(Hf < 0.5 > Zr < 0.5 > O < 2 >) < y >] < z > ferroelectric film, and then high-temperature annealing treatment is performed to obtain the doped hafnium oxide-based ferroelectric film based on doping distribution regulation and control. According to the invention, the distribution of doped elements is accurately regulated and controlled, so that the insulating property, ferroelectric property and durability of the material are remarkably improved, and the requirements of future high-performance electronic devices are met. The technical innovation opens up a new direction for application of ferroelectric materials and promotes further development of related fields.

An X-ray target (10) comprising: a thermally conductive substrate (20) having a surface (22); and a plurality of structures (30) which are separated from one another, on or embedded in at least a portion of the surface (22), each of the at least two structures (30) of the plurality of structures (30) comprising: a thermally conductive first material (32) in thermal communication with the substrate (20), and at least one layer (40) over the first material (32), wherein the at least one layer (40) comprises at least one second material (42) that is different from the first material (32), wherein the at least one second material (42) is configured to generate X-rays when irradiated by electrons, wherein the first materials (32) of the at least two structures (30) are separated from each other and the at least one second material (42) of the at least two structures (30) are separated from each other and different from each other, and wherein the at least one layer (40) further comprises at least one third material (44) between the first material (32) and the at least one second material (42), wherein the at least one third material (44) is different from the first material (32) and the at least one second material (42), and the at least one third material (44) has a thickness between 2 nanometers and 50 nanometers and / or the at least one third material (44) comprises at least one of the following materials: titanium nitride, iridium, chromium, beryllium and hafnium oxide.

The invention relates to an on-chip reconfigurable ferroelectric memory wake-up recovery system and method, and the system comprises a ferroelectric memory array which is used for determining the current working state of a plurality of ferroelectric memory units in the ferroelectric memory array, and generating a corresponding wake-up instruction signal or a recovery instruction signal according to the current working state; and the reconfigurable wake-up / recovery circuit is used for receiving the wake-up instruction signal or the recovery instruction signal and generating a corresponding wake-up pulse signal or a recovery pulse signal based on the wake-up instruction signal or the recovery instruction signal so as to perform corresponding wake-up or fatigue recovery operation on the ferroelectric memory array according to the wake-up pulse signal or the recovery pulse signal. Therefore, the problems that the reliability of the existing hafnium oxide-based ferroelectric memory is seriously influenced by the ferroelectric fatigue effect, and the wake-up effect of the ferroelectric memory is easy to cause wrong reading and writing of data are solved.

The invention provides an epitaxial hafnium oxide-based ferroelectric capacitor and an atomic layer deposition preparation method thereof, and the preparation method comprises the steps: providing a substrate layer, and depositing a zirconia epitaxial buffer layer on the substrate layer through employing an atomic layer deposition technology; forming a hafnium oxide-based epitaxial ferroelectric layer on the zirconium oxide epitaxial buffer layer by adopting an atomic layer deposition process; photoresist is spin-coated on the hafnium oxide-based epitaxial ferroelectric layer, exposure and development are carried out, and the shape of a top electrode is defined; preparing a top electrode on the hafnium oxide-based epitaxial ferroelectric layer; and annealing by adopting a rapid annealing process to realize the ferroelectricity of the hafnium oxide-based epitaxial ferroelectric layer. According to the application, the zirconium oxide epitaxial buffer layer is arranged between the ferroelectric layer and the substrate layer, so that the hafnium oxide-based epitaxial ferroelectric layer grown through ALD presents a highly oriented epitaxial lattice structure, the leakage current of the hafnium oxide-based ferroelectric capacitor can be reduced, and the cycle performance of the capacitor is improved.

The invention provides a performance prediction method for a hafnium oxide semiconductor material structure, and relates to the technical field of semiconductor material research and development. The method comprises the following steps: performing global search in an Hf-O binary system by using crystal structure prediction software, determining the most stable two-dimensional Hf2O4 crystal structure, and further confirming the crystal configuration through structure optimization; calculating an Hf2O4 crystal structure by using density functional theory calculation software, and evaluating the dynamic, thermodynamic and mechanical stability of Hf2O4 by using a calculation result system; the electronic property of the Hf2O4 is obtained through further deep calculation, and the structural stability and semiconductor characteristics of the Hf2O4 are verified. According to the invention, through the first principle and the evolutionary algorithm calculation, the simulation calculation is used to replace the traditional trial-and-error experiment, and the novel semiconductor material with high reliability can be efficiently explored; a theoretical basis is provided for the design of a novel high-performance semiconductor material in advanced chip manufacturing, the research and development period can be expected to be remarkably shortened, and the cost can be reduced.

The present application discloses a phase field analysis method based on the influence of oxygen vacancies on hafnium oxide-based ferroelectric films, including: considering the influence of oxygen vacancy concentration on hafnium oxide-based ferroelectric films, determining the total energy equation; establishing the constitutive equations of various physical fields based on the influence of oxygen vacancies through the energy equation; determining the control equations of various physical fields; solving through the finite element method, deriving the weak form of the control equations of various physical fields based on the influence of oxygen vacancies, and establishing a phase field calculation model based on the influence of oxygen vacancies for hafnium oxide-based ferroelectric films according to the weak form of the equations, so as to simulate the domain structure cloud diagram and its phase transition law of polymorphic coexistence of hafnium oxide-based ferroelectric films under different oxygen vacancy concentrations. The present application can provide theoretical guidance on the influence of oxygen vacancies for experimenters during the experiment through the establishment of a calculation model, thereby effectively reducing the experimental cost, and having a preset range control value for the oxygen vacancy concentration used in the experiment.

The invention belongs to the technical field of high-entropy materials, and discloses high-entropy pyrochlore ceramic as well as a preparation method and application thereof. The chemical formula of the high-entropy pyrochlore ceramic is (La0. 2Nd0. 2Sm0. 2Gd0. 2Er0. 2) 2M2O7, M is Zr, Hf, Ti or Sn, lanthanum oxide, neodymium oxide, samarium oxide, gadolinium oxide, erbium oxide and zirconium oxide or hafnium oxide or titanium oxide or tin oxide are sintered at the temperature of 1400-1600 DEG C to synthesize high-entropy pyrochlore powder, the high-entropy pyrochlore powder is mixed with tin chloride, ball-milled and dried to obtain mixed powder, the mixed powder is mixed with a surfactant, the mixed powder is mixed at the temperature of 200-400 DEG C, ball-milled and dried, and the high-entropy pyrochlore ceramic is obtained. And carrying out cold sintering under the pressure of 200-500MPa, and then carrying out vacuum sintering at the temperature of 1300-1600 DEG C, thereby obtaining the The high-entropy pyrochlore ceramic disclosed by the invention is high in purity, high in density, excellent in mechanical property and leaching resistance, low in sintering temperature and short in heat preservation time, and has an application prospect in the field of nuclear waste curing.

The disclosed and claimed subject matter relates to a ferroelectric device having a bottom electrode, a film comprising a crystalline ferroelectric material comprising a mixture of hafnium oxide and zirconium oxide, a ferroelectric phase in which a substantial portion (i.e., about 40% or more) or a majority of the material is in a deposited state, a top electrode; and to methods for preparing and depositing these materials. The bottom electrode is thin and has a low roughness. The ferroelectric device is compatible with back-end-of-line (BEOL) because all process steps are performed at a temperature of 400 degrees Celsius or less.

The invention relates to an ultrathin hafnium oxide ferroelectric film capacitor based on electrode optimization and a preparation method thereof, and the method can effectively inhibit the production of an interface dead layer and excessive oxygen vacancies at the bottom of an HYO ferroelectric film through constructing a capacitor with a six-layer structure of a substrate, a bottom electrode layer, an oxide intercalation layer, a metal layer, an HYO ferroelectric film layer and a top electrode layer. The HYO ferroelectric film layer is grown through an atomic layer deposition method, and a large-area high-quality ferroelectric film with good uniformity can be grown; the capacitor with a six-layer structure is rapidly annealed in an inert atmosphere, so that the formation of a ferroelectric orthogonal phase in the HYO ferroelectric film can be promoted, the ferroelectricity is improved, the coercive field and the leakage current are reduced, and the fatigue characteristic is enhanced; meanwhile, the whole preparation process is simple and controllable, and the prepared ferroelectric film is good in quality and has commercial production and application potential.

The invention provides a dielectric filler-doped solid electrolyte, a lithium metal battery and a preparation method, the dielectric filler-doped solid electrolyte comprises a polyether matrix, and the polyether matrix is formed by dispersing a lithium salt and a dielectric filler, the dielectric filler is two or more of barium titanate (BaTiO3), strontium titanate (SrTiO3), zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), cerium oxide (CeO2), zinc oxide (ZnO), lanthanum oxide (La2O3), aluminum oxide (Al2O3), tantalum oxide (Ta2O5) and yttrium oxide (Y2O3).

The invention discloses a hafnium oxide-based RRAM with a niobium oxide thermal enhancement layer and application, and belongs to the field of semiconductor memory devices. The hafnium oxide-based RRAM with the niobium oxide thermal enhancement layer sequentially comprises a top electrode, a niobium oxide layer, an HfO2 layer, an HfOx layer and a bottom electrode from top to bottom, and the niobium oxide thermal enhancement layer is inserted into the hafnium oxide-based RRAM, so that the forming voltage and the working temperature can be reduced, a storage window is also enlarged, and in the forming process, the storage temperature of the storage window can be increased. The growth direction of the conductive filament is effectively controlled; and the breaking point of the conductive filament can be effectively regulated and controlled in the reset process.

This invention discloses a tunable broadband photodetector based on a Schottky junction, comprising: an N-type silicon substrate, a gate ferroelectric dielectric, a gate electrode, a source electrode, and a drain electrode; the source electrode, gate ferroelectric dielectric, and drain electrode are sequentially disposed on the N-type silicon substrate, and the gate electrode is disposed on the gate ferroelectric dielectric; the gate ferroelectric dielectric is made of hafnium oxide, a ferroelectric material, and the gate ferroelectric dielectric and the gate electrode together constitute a ferroelectric gate; the gate electrode is made of a transparent metal oxide. This invention utilizes silicon CMOS manufacturing technology and a simple device structure, greatly reducing the fabrication difficulty of silicon-based infrared detectors, and by leveraging the characteristic that the polarization intensity of ferroelectrics weakens under infrared light, extends the detection long-wavelength limit of silicon-based infrared detectors to the near-infrared band. This invention also discloses a method for fabricating and applying a tunable broadband photodetector based on a Schottky junction.