2249 results about "Lanthanum oxide" patented technology

Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method includes sequentially exposing a substrate to a hafnium precursor and an oxidizing gas to deposit a hafnium oxide material thereon. In another example, a hafnium silicate material is deposited by sequentially exposing a substrate to the oxidizing gas and a process gas containing a hafnium precursor and a silicon precursor. The oxidizing gas usually contains water vapor formed by flowing a hydrogen source gas and an oxygen source gas through a water vapor generator. In another example, a method includes sequentially exposing a substrate to the oxidizing gas and at least one precursor to deposit hafnium oxide, zirconium oxide, lanthanum oxide, tantalum oxide, titanium oxide, aluminum oxide, silicon oxide, aluminates thereof, silicates thereof, derivatives thereof or combinations thereof.

A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, crystalline lanthanum oxide. A transistor may comprise the composite dielectric as a gate dielectric. A capacitor may comprise the composite dielectric as a capacitor dielectric.

A bulk single phase glass comprising 23 molar % to 50 molar % rare earth oxides, RE203, and 50 molar % to 77 molar % aluminum oxide, A12O3 is provided. The glass contains at least 50 molar % of Al2O3+RE2O3 and smaller amounts of oxide glass forming agents and other oxides than are found in prior art glasses. The addition of small amounts of lanthanum oxide, La2O3, prevents phase separation. The single phase glass is useful for optical applications such as lasers and optical amplifiers.

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

A nitrogen oxide storage material is disclosed which contains at least one storage component for nitrogen oxides in the form of an oxide, mixed oxide, carbonate or hydroxide of the alkaline earth metals magnesium, calcium, strontium and barium and the alkali metals potassium and caesium on a high surface area support material. The support material can be doped cerium oxide, cerium/zirconium mixed oxide, calcium titanate, strontium titanate, barium titanate, barium stannate, barium zirconate, magnesium oxide, lanthanum oxide, praseodymium oxide, samarium oxide, neodymium oxide, yttrium oxide, zirconium silicate, yttrium barium cuprate, lead titanate, tin titanate, bismuth titanate, lanthanum cobaltate, lanthanum manganate and barium cuprate or mixtures thereof.

The invention discloses an unsaturated hydrocarbon hydrogenation catalyst which comprises a carrier, an active component and an additive; the active component is a mixture of nickel oxides and other metal oxides; the additive is at least two out of magnesia oxide, lanthanum oxide and ceria; counted by weight percentage, the unsaturated hydrocarbon hydrogenation catalyst comprises 5-15% of nickel oxides, 1-10% of other metal oxides, 1-10% of additive and remaining quantity of carrier; and the metal oxide is one or more oxides out of molybdenum oxide, cobalt oxide and ferric oxide. The invention also discloses a preparation method and applications of the unsaturated hydrocarbon hydrogenation catalyst. The unsaturated hydrocarbon hydrogenation catalyst has the advantages of high hydrogenation precision, strong side effect resistance, good thermal stability, long service life and the like, can be used for processing tail gas in indirect coal oil production industrial and can be also used for processing unsaturated hydrocarbon in synthesis gas.

There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed.

Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La.sub.2SiO.sub.5). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.

Disclosed is a capacitor with a dielectric structure having an aluminum oxide layer and a lanthanum oxide layer and a fabrication method thereof. The capacitor includes: a lower electrode; a first dielectric layer with a high energy band gap formed on the lower electrode; a second dielectric layer formed on the first dielectric layer, the second dielectric layer with a high dielectric constant, wherein an energy band gap of the second dielectric layer is lower than the energy band gap of the first dielectric layer; and an upper electrode formed on the second dielectric layer.

A semiconductor device formed from a III-V nitride family semiconductor is disclosed that has a reduced gate leakage current and good interface characteristics between the III-V nitride family semiconductor and a gate insulating film. The semiconductor device includes a semiconductor layer formed from the III-V nitride family semiconductor, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film is formed from one of a tantalum oxide, a hafnium oxide, a hafnium aluminum oxide, a lanthanum oxide, and a yttrium oxide.

The invention provides a pyrolysis gasoline nickel system selective hydrogenation catalyst and a preparation method of the pyrolysis gasoline nickel system selective hydrogenation catalyst and belongs to a catalyst containing metal or metal oxide or hydroxide. The pyrolysis gasoline nickel system selective hydrogenation catalyst is characterized by being provided with a mesopore-macropore or double-mesopore compound pore channel, taking aluminum oxide as a carrier, taking nickel as a main active component, taking molybdenum as an auxiliary active component and taking the metal oxide as an auxiliary agent; the pyrolysis gasoline nickel system selective hydrogenation catalyst is composed of following components in parts by weight: 15-19 parts of nickel oxide, 6.5-20 parts of molybdenum oxide, 2.2-4.5 parts of the auxiliary agent and the balance of the aluminum oxide; the auxiliary agent is one or the combination of more than two of potassium oxide, magnesium oxide and lanthanum oxide. The invention provides the pyrolysis gasoline nickel system selective hydrogenation catalyst which is large in pore capacity and high in specific surface, has good reaction activity, high hydrogenation reaction selectivity, good stability, good arsenic dissolving and glue resisting capabilities and is provided with the compound pore channel, and the preparation method of the pyrolysis gasoline nickel system selective hydrogenation catalyst. When the catalyst is used for selectively hydrogenating full-fraction pyrolysis gasoline, the average diene hydrogenation rate is 99%.

The invention relates to an alkaline composite refractory brick, which consists of a periclase-magnesium aluminate spinel flame retardant coating and a periclase-forsterite thermal-protective coating. The proportion of the alkaline composite refractory brick is as follows: 1) the proportion of the flame retardant coating is as follows: 29 to 48 percent of magnesite of between 5 and 1 millimeter, 7 to 16 percent of the magnesium aluminate spinel of between 3 and 1 millimeter, 6 to 20 percent of the magnesite of between 1 and 0.088 millimeter, 0 to 4 percent of desilicated zirconia granules of between 0.4 and 0.088 millimeter, 16 to 25 percent of the magnesite of less than 0.088 millimeter, 0 to 10 percent of magnesite micropowder of less than 0.020 millimeter, 0 to 5 percent of desilicated zirconia micropowder of less than 0.020 millimeter, 0 to 3 percent of calcium carbonate micropowder less than 0.020 millimeter, 0 to 6 percent of lanthanum oxide of less than 0.020 millimeter, and 0 to 0.3 percent of additional water reducing agent (sulfonated naphthaldehyde polymer, sulfonated melamine polymer and polycarboxylic acid or sodium salt thereof); and 2) the proportion of the thermal-protective coating is as follows: 0 to 20 percent of the magnesite of between 3.2 and 1.0 millimeter, 35 to 45 percent of the forsterite of between 3.2 and 1.0 meter, 5 to 15 percent of the magnesite of between 1.0 and 0.088 millimeter, 5 to 15 percent of the forsterite of between 1.0 and 0.088 millimeter, and 30 to 40 percent of grinding powder of the magnesite and the forsterite of less than 0.088 millimeter. The material has the advantages that the material improves the erosion resistance of the flame retardant coating by micropowder technology, and allows the sintering temperature of the flame retardant coating to be matched with that of the thermal-protective coating, thereby producing the periclase-magnesium aluminate spinel alkaline composite refractory brick which has excellent.

The invention relates to a silver tin oxide/copper compound electrical contact, a working layer of the electrical contact material is composed of silver, tin oxide and mixed rare earth oxide, the weight content of all the components is: 85 percent to 94 percent of Ag, 6 percent to 15 percent of SnO2 and 0.1 percent to 2.0 percent of mixed rare earth oxide, and a welding layer is T2 copper. The weight content of SnO2 is 8 to 12 percent preferentially. The mixed rare earth oxide is a mixture of cerium oxide, lanthanum oxide and yttrium oxide. The preparation method is that the silver and the tin are first mixed according to certain proportion and then are smelted in an intermediate frequency furnace, then high-pressure water atomization equipment is used for carrying out alloy atomization, powder is obtained by drying after the atomization, the powder is screened and arranged in an internal oxidation furnace to carry out the oxidation at certain temperature and oxygen pressure, then billet is obtained by the processing of isostatic cool pressing after the oxidation, after that, a plate is formed by carrying out the sintering and extruding, and finally the finished product is obtained by compound rolling with the copper. The electrical contact is characterized by high conductivity, even and exquisite texture, high bonding strength of the working layer and the welding layer, welding resistance and arc erosion resistance.

Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.

The invention provides a laminated ternary positive material and a preparation method thereof. The chemical formula of the laminated ternary positive material is aLi2MnO3.(1-a)LiMn(1-x-y)NixCoyO2/M, wherein a is more than 0 and less than 1; x is more than 0 and less than 1; y is more than 0 and less than 1; and M is aluminium oxide (Al2O3), titanium dioxide (TiO2), zirconium oxide (ZrO2), lanthanum oxide (La2O3), zinc oxide (ZnO) or magnesium oxide (MgO). The preparation method comprises the following steps of: preparing a precursor mixture; sintering the precursor mixture in a sintering furnace to synthesize a aLi2MnO3.(1-a)LiMn(1-x-y)NixCoyO2 positive material; and performing compounding to obtain the aLi2MnO3.(1-a)LiMn(1-x-y)NixCoyO2/M material. The laminated ternary positive material has high energy density, a stable high-voltage charging and discharging structure, a simple preparation process and low production cost.

The invention relates to a preparation method of a low-cost self-reinforced submicron grain alumina ceramic, which belongs to the fine ceramic field. The method comprises the steps of: adopting industrial aluminum hydroxide or boehmite as a raw material, adding fine grain Alpha-alumina and water for ball milling so as to obtain an even slurry; adding water for mixing at a temperature between 70 and 90 DEG C, and adding acid to control the pH value at 2 to 5, so as to form an emulsion; and adding an additive which is a mixture selected from one or more than two of zinc oxide, magnesium oxide, calcium oxide, yttrium oxide, lanthanum oxide, zirconium oxide, boric oxide, ferric oxide, vanadium oxide, silicon oxide or titanium oxide for forming a gel after water is evaporated, and drying the gel and then sintering the gel under high temperature for preparing the self-reinforced submicron grain alumina ceramic containing alumina elongated grains. The ceramic is characterized in that crystal grains have diameters of less than 0.5mu m, and a microstructure contains elongated alumina grains have length-diameter ratios of larger than 5, and has the advantages of high hardness, high toughness and good wear resistance, and can be widely used in ceramic grinding media and the abrasives industry.

The invention discloses a preparation method of a catalyst for removing NOx in coke oven tail gas through low-temperature sulfur-resistant catalytic reduction.The catalyst is prepared by taking titanium oxide as a carrier, taking one or two of cerium oxide, zirconia oxide and lanthanum oxide as an auxiliary, taking one or more than two of manganese oxide, cobalt oxide, copper oxide and ferric oxide as an active ingredient and adopting a precipitation-deposition method, wherein two or three of TiO2, ZrO2, CeO2, La2O2, MgO, CaO and BaO can be adopted as the carrier.In the low-temperature sulfur-resistant denitration catalyst, the loading quantity of the active ingredient is 5 wt%-20 wt%, and the loading quantity of the auxiliary is 0.5%-5%.According to the preparation method, the active ingredient prepared by achieving precipitation and deposition sodium carbonate and oxidizing and loading the active ingredient manganese dioxide through potassium permanganate is mainly distributed in the surface area of the carrier, and the dosage of the active ingredient can be effectively decreased.The catalyst is high in activity and sulfur poisoning resisting capacity and particularly suitable for catalytic removal of the NOx in the coke oven tail gas, and the denitration effect of the catalyst also can be expanded to the low-temperature denitration process of other tail gases.

The invention discloses a denitration catalyst and a preparation method thereof, the catalyst takes pretreated cordierite honeycomb ceramics as a matrix, a silicon-aluminum coating, a composite coating and an active component are coated on the surface of the matrix, by measuring gross weight of the catalyst, the catalyst contains 80-90wt% of cordierite honeycomb ceramics, 2-9wt% of silicon-aluminium coating, 3-10wt% of composite coating, and 0.01-15wt% of active component, wherein the active component can be Mn and Fe; by measuring gross weight of the silicon-aluminum coating, the silicon-aluminum coating comprises 10-50wt% of silica, and 50-90wt% of alumina; by measuring gross weight of the composite coating, the composite coating contains 40-80wt% of titanium dioxide, 5-35wt% of ZSM-5 molecular sieve, and 10-40wt% of auxiliary agent; wherein the auxiliary agent is selected from one or more of cerium oxide, zirconia or lanthana. The denitration catalyst has the advantages of large coating load capacity, high firmness, good poison-resistance performance and activity, and wide reaction temperature window; and the preparation method is simple and is suitable for industrial application.