23 results about "Tantalum oxide" patented technology

This invention provides a method for producing high-purity aluminum-niobium-tantalum master alloys and co-producing ammonium fluoride, belonging to the fields of metallic materials and inorganic chemicals. The invention involves mixing fluoroniobic acid, fluorotantalic acid, and ammonia water for a precipitation reaction to obtain a precipitate and an ammonium fluoride solution. The ammonium fluoride solution is then concentrated, cooled for crystallization, dehydrated, and dried sequentially to obtain ammonium fluoride. The precipitate is then dried and oxidized and calcined sequentially to obtain an oxide. The oxide, aluminum powder, potassium chlorate, and calcium fluoride are mixed and subjected to a vacuum aluminothermic reaction to obtain the high-purity aluminum-niobium-tantalum master alloy. This invention, considering both broadening the range of raw material selection and optimizing the production process, reacts fluoroniobic acid, fluorotantalic acid, and ammonia water to produce niobium hydroxide and tantalum hydroxide precipitates, which are then oxidized and calcined to form niobium and tantalum oxides. The high-purity aluminum-niobium-tantalum alloy is then prepared using a vacuum aluminothermic reaction. Simultaneously, ammonium fluoride can be co-produced, resulting in high raw material utilization.

Various embodiments herein relate to electrochromic devices and electrochromic device precursors, as well as methods and apparatus for fabricating such electrochromic devices and electrochromic device precursors. In certain embodiments, the electrochromic device or precursor may include one or more particular materials such as a particular electrochromic material and / or a particular counter electrode material. In various implementations, the electrochromic material includes tungsten molybdenum oxide. In these or other implementation, the counter electrode material may include nickel tungsten oxide, nickel tungsten tantalum oxide, nickel tungsten niobium oxide, nickel tungsten tin oxide, or another material.

This invention discloses a method for preparing a low-absorption tantalum oxide thin film and its application in DWDM filters. The method includes the following steps: S1, placing the substrate in the reaction chamber of a mid-frequency magnetron sputtering system and evacuating the reaction chamber; S2, introducing argon and oxygen into the reaction chamber; S3, using a tantalum target, turning on the power of the mid-frequency magnetron sputtering system for pre-sputtering; S4, performing a second sputtering; S5, vacuum cooling to obtain a tantalum oxide thin film formed on the substrate. The tantalum oxide thin film prepared by this invention has an extinction coefficient k ≤ 5×10⁻⁶ in the 1550nm band, which is about two orders of magnitude lower than that of the prior art (k≈10⁻⁴). This invention does not require an ion source and can be achieved using only mid-frequency magnetron sputtering, resulting in low equipment requirements and significant cost advantages. A 100G DWDM filter made using the thin film prepared by this invention has an insertion loss ≤0.1 dB, which is better than the 0.2 dB of the prior art.

The utility model relates to chemical engineering technical field, and disclose a tantalum oxide chemical precipitation method preparation equipment, including box body, the surface of box body is equipped with mounting structure, mounting structure includes the mounting frame, the surface of mounting frame is fixedly connected with the surface of box body, the surface of mounting frame is equipped with the sliding slot, the inner wall sliding connection of sliding slot has the sliding block, the inner wall fixedly connected with the fixed link of sliding slot, the surface sliding connection of fixed link's arc surface and sliding block, the surface fixedly connected with the filter screen of sliding block, the inner wall of sliding slot is equipped with the ball bearing. The utility model solved the tantalum oxide chemical precipitation method preparation equipment of prior art, when needing to maintain or replace filter screen, often exist inconvenient quick replacement situation, the normal use of device is affected for a long time, and then the working efficiency of device is affected.

The present invention provides a high-temperature resistant device and a method for manufacturing the same. [Solution] The method for manufacturing a high heat-resistant device includes providing a tantalum substrate as the device body, oxidizing the tantalum substrate in an oxygen-containing environment to generate a tantalum oxide layer on the surface of the tantalum substrate, and then burying the oxidized tantalum substrate in a carbon-containing substance and carrying out a carbonization reaction in an inert gas to convert the tantalum oxide layer into a carbide tantalum layer. The temperature of the oxidation treatment is between 100°C and 1100°C.

The use of selective deposition of silicon nitride can eliminate conventional patterning steps by allowing silicon nitride to be deposited only in selected and desired areas. Using a silicon iodide precursor alternately with a thermal nitrogen source in an ALD or pulsed CVD mode, silicon nitride can be deposited preferentially on a surface such as silicon nitride, silicon dioxide, germanium oxide, SiCO, SiOF, silicon carbide, silicon oxynitride, and low k substrates, while exhibiting very little deposition on exposed surfaces such as titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, and strontium oxide.

A semiconductor memory structure is provided. The semiconductor memory structure includes a bottom electrode, a base stack stacking on the bottom electrode along a first direction, a free layer stacking on the base stack along the first direction; a tantalum (Ta)-containing capping layer formed on the free layer; and a top electrode formed over the Ta-containing capping layer. The Ta-containing capping layer includes tantalum oxide with oxygen concentration gradually decreased from a bottom portion of the Ta-containing capping layer toward a middle portion of the Ta-containing capping layer, and also gradually decreased from a top portion of the Ta-containing capping layer toward a middle portion of the Ta-containing capping layer.

Disclosed is a method for preparing cellulose and lignin oil by depolymerizing lignocellulose without exogenous hydrogen, including: performing reaction on the lignocellulose dispersed into an aqueous medium at 120° C. to 180° C. under the action of a catalyst; and separating a reaction product to obtain the cellulose and the lignin oil. The catalyst includes a carrier and an active ingredient loaded on the carrier, where the active ingredient is selected from one of platinum, palladium, ruthenium and nickel; the carrier is selected from one of a metal oxide, a metal composite material, silicon dioxide, nitrogen-doped carbon, molybdenum carbide and molybdenum nitride; and the metal oxide is selected from one of niobium oxide, tantalum oxide, tungsten oxide, zirconium oxide, aluminum oxide, titanium dioxide and molybdenum oxide.

This invention discloses a method for preparing low-oxygen, high-specific-capacitance tantalum powder for tantalum capacitors, addressing the problems commonly found in existing magnesothermic reduction methods for tantalum powder preparation, such as high oxygen content, difficulty in suppressing the byproduct magnesium tantalate, and poor powder particle uniformity leading to low specific capacitance, high leakage current, and poor electrical performance. This method involves uniformly coating a completely removable soluble additive onto the surface of porous spherical tantalum oxide particles. After drying, these particles are mixed with alkali metal halides and a single-phase addition of metallic magnesium powder. A gradient-temperature reduction process is employed: in the intermediate temperature stage, the additive decomposes to construct a porous framework and initiates initial reduction; in the high-temperature stage, deep reduction is completed. A molten salt medium synergistically regulates the heat of reaction and mass transfer, completely suppressing the formation of magnesium tantalate. The product, after post-treatment, yields tantalum powder with an oxygen content ≤2500 ppm, a specific capacitance ≥110000 μFV / g, and a uniform coral-like porous structure. This method offers a clean and highly controllable process, resulting in high-purity tantalum powder with excellent electrical properties, making it suitable for high-end tantalum electrolytic capacitors.

This invention discloses a method for preparing dimethyl sulfoxide, relating to the field of electrochemical technology. The method for preparing dimethyl sulfoxide includes the following steps: passing gaseous dimethyl sulfide and water vapor into the anode of an electrochemical reaction device, passing water into the cathode of the electrochemical reaction device, and applying a DC voltage between the anode and cathode to carry out an electrochemical reaction to obtain a product containing dimethyl sulfoxide; wherein, the anode includes a composite matrix and a perfluorosulfonic acid ionomer loaded on the surface of the composite matrix; the composite matrix includes a first substrate and an anti-corrosion coating disposed on the surface of the first substrate, the anti-corrosion coating being made of at least one of ruthenium oxide, iridium oxide, antimony-doped tin oxide, tantalum oxide, and lead oxide, which solves the problems of high energy consumption, low product yield and selectivity in the preparation of dimethyl sulfoxide by liquid-phase electrochemical oxidation method in the prior art.

This invention provides a liquid dispensing head that enhances reliability against liquids by improving the liquid resistance of a common flow path with a high total liquid flow rate, without compromising the dispensing function of the discharge port. [Solution] A liquid discharge head comprising a laminated substrate formed by stacking a plurality of substrates, each including a nozzle substrate having a plurality of nozzles including discharge ports for discharging liquid, a flow path substrate having individual flow paths for supplying liquid to the nozzles and a common flow path that fluidly communicates with the plurality of individual flow paths, and a protective film made of at least one material selected from the group consisting of tantalum oxide, hafnium oxide, and zirconium oxide, which is continuously provided on the inner wall surface of the fluid path from the common flow path to the discharge port, wherein the thickness of the protective film in the common flow path is greater than the thickness of the protective film in the nozzle.

A magnetic memory device includes a pinned layer pattern, a free layer pattern on the pinned layer pattern, a tunnel barrier layer pattern between the pinned layer pattern and the free layer pattern, and an oxide layer pattern which is spaced apart from the tunnel barrier layer pattern with the free layer pattern interposed therebetween, and includes tantalum (Ta) oxide, in which the free layer pattern includes a first sub-free layer and a second sub-free layer which are stacked in sequence, a thickness of the second sub-free layer is smaller than that of the first sub-free layer, and the second sub-free layer includes a material having a higher boron affinity than the first sub-free layer.

The application provides a high-mobility ceramic target material and a preparation method and application thereof, and belongs to the technical field of ceramic materials. In the application, indium oxide is used as a main body, and two or more of titanium oxide, zirconium oxide, gallium oxide, tantalum oxide, tungsten oxide, molybdenum oxide and rare earth oxides are introduced as doped oxides to construct a doped system covering "double-element co-doping-multiple-doping". The core of the doped system is to realize comprehensive regulation of carrier concentration, lattice distortion and defect type in the indium oxide lattice through the functional complementation and synergistic effect of different elements, so as to optimize the carrier transport path and inhibit the scattering mechanism. The ceramic target material prepared based on the doped system has high density, low resistivity and excellent component uniformity. The transparent conductive thin film deposited by the ceramic target material through a magnetron sputtering process and the like exhibits excellent photoelectric performance.

The present application relates to calcium-containing high refractive phosphate glasses. The glass composition contains phosphorous oxide (P2O5), niobium oxide (Nb2O5), titanium oxide (TiO2), potassium oxide (K2O), and calcium oxide (CaO) as essential components, and can optionally contain barium oxide (BaO), sodium oxide (Na2O), lithium oxide (Li2O), tungsten oxide (WO3), bismuth oxide (Bi2O3), tantalum oxide (Ta2O5), silicon oxide (SiO2), and other components. The glass can be characterized as having a high refractive index at 587.56 nm with a comparable room temperature low density.

The present application relates to the technical field of carbon coating, and discloses a graphite device surface composite tantalum carbide coating and a coating method thereof, which comprises a carbon layer, an intermediate tantalum carbide layer and a tantalum carbide outer layer arranged in sequence along the graphite device surface outward; the intermediate tantalum carbide layer is obtained by reacting tantalum oxide, tantalum carbide and PVA glue in any proportion; and the tantalum carbide outer layer is obtained by reacting 2-8% of the mass fraction of tantalum chloride, 0.3-0.8% of the mass fraction of chromium carbide, 2-10% of the mass fraction of PVA glue and 15-25% of the mass fraction of ethylene glycol. The graphite device surface composite tantalum carbide coating in the present application can form a graphite device surface composite tantalum carbide coating with stronger binding force and higher surface finish through the mutual bonding effect between the multiple composite coatings, and the preparation process conditions are relatively lower.

A piezoelectric-on-insulator (POI) substrate includes a carrier substrate comprising a trapping layer on a free surface of the carrier substrate, a piezoelectric layer, an intermediate structure sandwiched between the piezoelectric layer and the trapping layer of the carrier substrate, wherein the intermediate structure comprises at least one tantalum oxide (Ta2O5)-based diffusion barrier layer that prevents the diffusion of metal elements and has a thickness / EM greater than a predetermined thickness, the predetermined thickness being determined according to the thickness of the trapping layer such that the metal element dose in the trapping layer is lower than a predetermined threshold dose. A method may be used to manufacture such a piezoelectric-on-insulator (POI) substrate.

The application discloses a method for recovering tantalum and niobium from tantalum-niobium concentrate, which comprises the following steps: mixing and roasting the tantalum-niobium concentrate with an alkaline additive, obtaining a roasting product, and then performing water immersion and solid-liquid separation on the roasting product to obtain a water immersion liquid; mixing the water immersion liquid with an ionic liquid, and then standing and separating the mixture into layers, taking the upper layer liquid, mixing the upper layer liquid with sulfuric acid, and then standing and separating the mixture to obtain a tantalum-containing liquid phase and a niobium-containing liquid phase; adding ammonia water into the tantalum-containing liquid phase and the niobium-containing liquid phase respectively, and then performing washing, drying and roasting on the obtained tantalum precipitate and niobium precipitate to obtain tantalum oxide and niobium oxide. The application adopts an alkalization roasting-water immersion process, avoids the use of hydrofluoric acid, and thus reduces the treatment cost of waste residues and waste gas. In addition, the high selectivity and thermal stability of the ionic liquid to tantalum and niobium solve the problem of low selectivity of a traditional extractant, reduce the loss of the extractant, shorten the extraction stages, and make the single separation efficiency reach more than 90%, thereby effectively reducing the production cost and providing a new separation and extraction technology for tantalum-niobium metallurgy.

This invention discloses a titanium oxide-zirconia composite target, its preparation method, and its applications. The titanium oxide-zirconia composite target comprises the following raw materials in parts by weight: 60-80 parts titanium oxide; 20-40 parts zirconium oxide; and 0.5-3 parts cerium oxide or 0.1-1 parts tantalum oxide. By doping titanium oxide and zirconium oxide with specific amounts of cerium oxide or tantalum oxide, this invention effectively improves the grain size of the titanium oxide-zirconia composite target and reduces grain boundary defects. The oxide film obtained from the titanium oxide-zirconia composite target of this invention possesses high refractive index and a wide bandgap, with the bandgap increased to over 3.5 eV, expanding its application in deep ultraviolet optical devices. The doping of cerium oxide or tantalum oxide improves the crack resistance of the film, making it crack-free after bending.

Provided are methods to reduce the thickness of a high-κ layer needed in a DRAM capacitor and, thus, allow the cell electrodes to be larger, giving higher cell capacitance. A tantalum nitride (TaN) layer is introduced as a liner in the capacitor hole before a titanium nitride (TiN) electrode layer. The TaN layer converts to a thin layer of tantalum oxide (Ta2O5), which permits a reduction in the high-κ layer thickness for the same capacitance versus leakage. Because this Ta2O5 is formed directly on the cell electrode, it ensures a low leakage film exists in the narrowest gaps even before the high-κ layer is deposited.

The application belongs to the technical field of lithium ion battery materials, and particularly relates to a high-nickel single-crystal ternary positive electrode modified material and a preparation method thereof. The method comprises the following steps: after high-nickel single-crystal ternary precursors, lithium hydroxide monohydrate and cerium-tantalum co-doped lithium molybdenum oxyfluoride compounds are ball milled, pre-sintering and high-temperature calcination are performed under an oxygen atmosphere, and single-crystal particle powder is obtained by crushing; then the single-crystal particle powder is mixed with calcium-doped lithium boron phosphorus oxynitride compounds, dried, and then heat treated under a nitrogen atmosphere and sieved. The cerium-tantalum co-doped lithium molybdenum oxyfluoride compounds are prepared by ball milling, drying and step-by-step sintering in a protective powder from lithium carbonate, cerium oxide, tantalum oxide, molybdenum oxide and lithium fluoride; the calcium-doped lithium boron phosphorus oxynitride compounds are prepared by ball milling, step-by-step sintering from lithium carbonate, calcium carbonate, boric acid and ammonium dihydrogen phosphate, and then ball milling and sintering with lithium nitride under nitrogen protection. The application significantly improves the structural stability and electrochemical performance of the high-nickel single-crystal ternary positive electrode material.

The application belongs to the technical field of target materials, and discloses an anti-molten titanium-based composite target material and a preparation method and application thereof. Raw materials for preparing the titanium-based composite target material include metal oxides and titanium powder, wherein the metal oxides are selected from tantalum oxide and / or niobium oxide; and the mass ratio of the metal oxides to the titanium powder is (12-47):(53-88). The application uses specific metal oxides and titanium powder as main preparation raw materials, and the metal oxides have similar evaporation melting points with the titanium-based target material, so that the thermodynamic stability of the target material is ensured while the stable sublimation of the target material is not blocked. Meanwhile, a reinforcing agent is added as a low-chemical-activity additive, and the thermodynamic stability is improved in cooperation with the metal oxides, and the reinforcing agent does not react with the target material and does not affect the deposition and crystallization of the titanium-based thin film. The titanium-based composite target material of the application ensures the stability of the shape structure of the target material and improves the quality of the thin film under the premise of reducing the cost of the target material.

The application belongs to the technical field of thin films, and discloses a titanium-based thin film and a preparation method and application thereof. The titanium-based thin film is deposited by a titanium-based target material. Raw materials for preparing the titanium-based target material include a titanium-based material and a doped metal oxide. The doped metal oxide is selected from tantalum oxide and / or niobium oxide. The mass ratio of the doped metal oxide to the titanium-based material is (12-47):(53-88). The application introduces Ta2O5 and / or Nb2O5, a kind of doped metal oxide with a melting point slightly higher than Ti, into the titanium-based target material, so that the target material realizes collaborative sublimation and stable evaporation in the reactive physical deposition process, thereby obtaining a titanium-based target material with anti-melting performance. Meanwhile, the proportion of the doped metal oxide such as Ta2O5 and Nb2O5 in the titanium-based target material is quantitatively designed to quantitatively control the composition of the titanium-based thin film, so as not to hinder the normal deposition of the thin film on the premise of ensuring that the target material does not melt.

This invention belongs to the field of lithium-ion battery material technology, specifically relating to a high-nickel single-crystal ternary cathode modified material and its preparation method. The method includes: ball milling a high-nickel single-crystal ternary precursor, lithium hydroxide monohydrate, and a cerium-tantalum co-doped lithium molybdenum oxyfluoride compound, followed by pre-sintering and high-temperature calcination under an oxygen atmosphere to obtain single-crystal powder particles; then mixing the single-crystal powder particles with a calcium-doped lithium boron phosphorus oxynitride compound, drying, and holding under a nitrogen atmosphere before sieving. The cerium-tantalum co-doped lithium molybdenum oxyfluoride compound is prepared by ball milling, drying, and segmented sintering of lithium carbonate, cerium oxide, tantalum oxide, molybdenum oxide, and lithium fluoride in a protective powder; the calcium-doped lithium boron phosphorus oxynitride compound is prepared by ball milling, segmented sintering, and ball milling and sintering with lithium nitride under nitrogen protection. This invention significantly improves the structural stability and electrochemical performance of the high-nickel single-crystal ternary cathode material.