119 results about "Tantalum oxide" patented technology

The invention provides a diaphragm and a preparation method thereof and a lithium ion battery, the diaphragm comprises a base membrane layer and a composite functional layer, the composite functional layer comprises hydrophobic SiO2 aerogel modified by a hydrophobic agent, a conductive ion polymer and a solid electrolyte, and the composite functional layer respectively accounts for 3-12wt%, 0.5-1.0 wt% and 0.5-1.5 wt% of the total mass of the diaphragm; the hydrophobic agent comprises trimethylchlorosilane, hexamethyldisilazane, perfluorooctyltriethoxysilane, polyvinylidene fluoride, polydimethylsiloxane and the like, the conductive ionic polymer comprises polyvinylpyrrolidone, lithium polymethacrylate, lithium polystyrene sulfonate, polyacrylamide and the like, and the solid electrolyte comprises lithium lanthanum titanium oxide, lithium lanthanum zirconium oxide, lithium lanthanum zirconium tantalum oxide and the like. The wettability is improved by the high porosity of the hydrophobic SiO2 aerogel, the stability and strong conductivity of a physical conductive network of the solid electrolyte and the ion affinity and amphoteric binding capacity of the conductive ion polymer are optimized, the electrochemical performance and thermal stability of the interface are optimized, and comprehensive optimization of the thermal-electric-interface performance of the diaphragm is realized through combination.

The invention discloses a titanium-based-iridium tantalum oxidation coating anode and a preparation method and application thereof, and belongs to the technical field of anode preparation, and the preparation process of the titanium-based-iridium tantalum oxidation coating anode comprises the steps that a titanium substrate is brushed with a solution containing a tantalum source A, then sintering is conducted, brushing-sintering is repeated, and a tantalum-coated titanium substrate is obtained; the tantalum-coated titanium substrate is brushed with the iridium-tantalum oxidation coating liquid, then sintering is carried out, and brushing-sintering is repeated, so that the tantalum-coated titanium substrate is obtained; the iridium-tantalum oxidation coating liquid contains a tantalum source B, an iridium source and a zirconium source; in the iridium tantalum oxidation coating liquid, the mass ratio of tantalum to iridium is (6-7): (4-5), according to the preparation method provided by the invention, through two times of brushing, the tantalum content in the titanium-based-iridium tantalum oxidation coating anode is more than 5% greater than the iridium content, and when the titanium-based-iridium tantalum oxidation coating anode is used for an alkaline citric acid electroplating system, the decomposition of a complexing agent can be effectively inhibited, the components of the electroplating liquid are maintained to be stable, so that the quality of a plating layer is ensured, and the service life of the plating layer is prolonged. The maintenance cost of the plating solution is reduced and the service life is prolonged.

The invention belongs to the technical field of development and manufacturing of solid-state electrolyte materials and solid-state lithium batteries, and particularly relates to an all-solid-state oxide-polymer electrolyte membrane as well as a preparation method and application thereof. The electrolyte membrane comprises a polymer matrix, a lithium salt, butanedinitrile, lithium lanthanum zirconium tantalum oxide and graphite phase carbon nitride, the polymer matrix, the lithium salt, the butanedinitrile, the lithium lanthanum zirconium tantalum oxide and the graphite phase carbon nitride are uniformly mixed to form a solid film; the polymer matrix is polyacrylonitrile and forms a framework of the electrolyte membrane; the lithium salt, the butanedinitrile, the lithium lanthanum zirconium tantalum oxide and the graphite phase carbon nitride are at least physically and uniformly dispersed in the polymer matrix. The electrolyte membrane can be prepared through the steps of slurry preparation, defoaming treatment, membrane forming processing, drying and curing and the like, and can be used in a solid-state lithium battery, so that the contact between the electrolyte membrane and an electrode interface is improved, side reaction is inhibited, the ion transmission efficiency and mechanical property are improved, the interface impedance is reduced, and the cycling stability and safety of the solid-state lithium battery are enhanced.

The invention provides a dielectric filler-doped solid electrolyte, a lithium metal battery and a preparation method, the dielectric filler-doped solid electrolyte comprises a polyether matrix, and the polyether matrix is formed by dispersing a lithium salt and a dielectric filler, the dielectric filler is two or more of barium titanate (BaTiO3), strontium titanate (SrTiO3), zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), cerium oxide (CeO2), zinc oxide (ZnO), lanthanum oxide (La2O3), aluminum oxide (Al2O3), tantalum oxide (Ta2O5) and yttrium oxide (Y2O3).

The invention discloses a surface modification method for a silicon-carbon composite material electrode, which belongs to the technical field of lithium ion battery negative electrode materials, and mainly comprises the following steps: modifying the surface of the silicon-carbon composite material electrode by magnetron sputtering; wherein the modification material comprises a metal material and / or a solid electrolyte material; the metal material is selected from Al, Cu or In; the solid electrolyte material is selected from titanium aluminum lithium phosphate or gallium-doped lithium lanthanum zirconium tantalum oxide. The method solves the problems of poor conductivity, unstable SEI film and volume effect of the silicon-carbon electrode, and after the prepared electrode is assembled into a battery, the performance of the battery is superior to that of an unmodified electrode, the battery is adaptive to a solid-state battery, and the electrode has industrialization potential and application value.

The embodiment of the invention discloses a donor-receptor complementary co-doped hafnium oxide-based ferroelectric film material and a preparation method thereof. The method comprises the following steps: according to the composition of the donor-receptor complementary co-doped hafnium oxide-based ceramic target material, mixing raw material powder to obtain mixed raw material powder; calcining the mixed raw material powder under a preset condition; pressing and molding the calcined product into a target material green body; and sintering the target material green body to obtain the donor-receptor complementary co-doped hafnium oxide-based ceramic target material. Wherein the composition of the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material is expressed as AxByHf (1-x-y) O2, A is a donor and comprises elements niobium and tan, and B is an acceptor and comprises elements yttrium and lanthanum; x is more than 0.01 and less than 0.05, and y is more than 0.01 and less than 0.05; the raw material powder containing the donor comprises niobium oxide and tantalum oxide, and the raw material powder containing the acceptor comprises yttrium oxide and lanthanum oxide; and taking the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material as a sputtering target, and obtaining the donor-acceptor complementary co-doped hafnium oxide-based ferroelectric material film by using a pulse laser deposition method.

This invention provides a method for producing high-purity aluminum-niobium-tantalum master alloys and co-producing ammonium fluoride, belonging to the fields of metallic materials and inorganic chemicals. The invention involves mixing fluoroniobic acid, fluorotantalic acid, and ammonia water for a precipitation reaction to obtain a precipitate and an ammonium fluoride solution. The ammonium fluoride solution is then concentrated, cooled for crystallization, dehydrated, and dried sequentially to obtain ammonium fluoride. The precipitate is then dried and oxidized and calcined sequentially to obtain an oxide. The oxide, aluminum powder, potassium chlorate, and calcium fluoride are mixed and subjected to a vacuum aluminothermic reaction to obtain the high-purity aluminum-niobium-tantalum master alloy. This invention, considering both broadening the range of raw material selection and optimizing the production process, reacts fluoroniobic acid, fluorotantalic acid, and ammonia water to produce niobium hydroxide and tantalum hydroxide precipitates, which are then oxidized and calcined to form niobium and tantalum oxides. The high-purity aluminum-niobium-tantalum alloy is then prepared using a vacuum aluminothermic reaction. Simultaneously, ammonium fluoride can be co-produced, resulting in high raw material utilization.

The present application relates to the field of electrochemical wastewater biological treatment technology, and discloses an electrode, a preparation method thereof and application of the electrode in strengthening methane production of a membrane bioreactor.The preparation method comprises the following steps: step (1): impregnating a foamed carbon matrix in a dispersion system containing a tantalum precursor under vacuum conditions, and obtaining an intermediate after drying; step (2): heat treating the intermediate at 400-600 DEG C in the presence of a protective atmosphere for at least 1 h, and obtaining a foamed carbon electrode loaded with modified tantalum oxide.The present application adopts an impregnation-heat treatment method to prepare a foamed carbon electrode loaded with modified tantalum oxide, and uses a MEC-AnMBR system constructed by the electrode to treat low-intensity municipal wastewater, thereby achieving efficient anaerobic digestion methane production and membrane pollution collaborative control under a full temperature gradient, and providing a low-cost, easily enlarged technical solution for energy self-sufficiency of a wastewater treatment plant.

Various embodiments herein relate to electrochromic devices and electrochromic device precursors, as well as methods and apparatus for fabricating such electrochromic devices and electrochromic device precursors. In certain embodiments, the electrochromic device or precursor may include one or more particular materials such as a particular electrochromic material and / or a particular counter electrode material. In various implementations, the electrochromic material includes tungsten molybdenum oxide. In these or other implementation, the counter electrode material may include nickel tungsten oxide, nickel tungsten tantalum oxide, nickel tungsten niobium oxide, nickel tungsten tin oxide, or another material.

A capacitor 1a includes tantalum metal 20 and a dielectric layer 10. The dielectric layer 10 covers the tantalum metal and contains tantalum oxide. The dielectric layer 10 contains fluorine and phosphorus. The dielectric layer 10 includes, for example, a first portion 11 and a second portion 12. The first portion 11 is separate from the tantalum metal 20 in the thickness direction of the dielectric layer 10. The second portion 12 is in contact with the tantalum metal 20 in the thickness direction of the dielectric layer 10.

The application discloses a short rod-shaped tantalum oxide-graphene quantum dot nanocomposite, a preparation method and application thereof, and belongs to the technical field of nanomaterial science and photocatalytic degradation. The method comprises the following steps: heating citric acid monohydrate, ultrasonically dispersing the cooled citric acid monohydrate in water to obtain a graphene quantum dot solution; adding an ethanol solution into a n-butanol solution of pentachlorotantalum, uniformly mixing, and adjusting the pH value of the mixed solution; collecting white precipitates at the bottom, washing the white precipitates with an ethanol solution until the pH value of the supernatant is 7, and performing suction filtration to obtain newly prepared tantalum acid solid; adding the newly prepared tantalum acid solid and hydrogen peroxide into the graphene quantum dot solution, continuing to heat until the solution is clear, and evaporating water to collect solid into a tube furnace, and annealing under a nitrogen atmosphere to obtain the GQD@Ta2O5 nanocomposite. The nanocomposite prepared by the application is a high-efficiency photocatalyst, and can efficiently photocatalyze and degrade various organic pollutants.

The invention provides a preparation method and application of a monatomic catalyst for preparing 1, 3-propylene glycol through high-selectivity hydrogenolysis of glycerol. The catalyst is composed of active metal, a metal oxide auxiliary agent A and a carrier. The active metal is Pt, and the metal oxide auxiliary agent A is one or two or more of niobium oxide, tantalum oxide, molybdenum oxide and tungsten oxide. The composition and proportion of the monatomic catalyst are accurately regulated and controlled through a strong electrostatic adsorption method, 1, 3-propylene glycol is prepared through efficient catalysis of selective hydrogenolysis of glycerin, the yield of 1, 3-propylene glycol in a high-concentration glycerin solution (50 wt%) reaches up to 0.43 g of 1, 3-propylene glycol g of the catalyst h <-1 >, and excellent stability is achieved. The method has the advantages that the catalyst is simple and convenient to prepare and low in cost, the precious metal atom utilization rate is 100%, recovery is easy, products are easy to separate, and the reaction process is environment-friendly. According to the technical scheme, the invention provides a novel preparation method and application of the monatomic catalyst for preparing 1, 3-propylene glycol through efficient hydrogenolysis of glycerol, and the monatomic catalyst has an excellent application prospect.

This invention discloses a method for preparing a low-absorption tantalum oxide thin film and its application in DWDM filters. The method includes the following steps: S1, placing the substrate in the reaction chamber of a mid-frequency magnetron sputtering system and evacuating the reaction chamber; S2, introducing argon and oxygen into the reaction chamber; S3, using a tantalum target, turning on the power of the mid-frequency magnetron sputtering system for pre-sputtering; S4, performing a second sputtering; S5, vacuum cooling to obtain a tantalum oxide thin film formed on the substrate. The tantalum oxide thin film prepared by this invention has an extinction coefficient k ≤ 5×10⁻⁶ in the 1550nm band, which is about two orders of magnitude lower than that of the prior art (k≈10⁻⁴). This invention does not require an ion source and can be achieved using only mid-frequency magnetron sputtering, resulting in low equipment requirements and significant cost advantages. A 100G DWDM filter made using the thin film prepared by this invention has an insertion loss ≤0.1 dB, which is better than the 0.2 dB of the prior art.

A method for efficiently recovering iridium from organic coating liquids involves first mixing the coating liquid with an alkaline solution, stirring and reacting at room temperature, followed by solid-liquid separation. The solid is dried and dehydrated for later use, while the liquid is the supernatant. The supernatant is heated, and an alkaline solution is added and stirred to react. After sufficient settling, solid-liquid separation is performed again. The solid is dried and dehydrated, then ground together with the previously dried and dehydrated solid into powder. The powder is then calcined in a muffle furnace to obtain iridium and tantalum oxide powders. HF is added to the oxide powders to remove impurities such as Ta2O5, and solid-liquid separation is performed again. The solid is washed with water until neutral, dried and dehydrated, dissolved in aqua regia, and concentrated by heating to obtain chloroiridium acid. The method provided by this invention has a simple synthesis process, the supernatant after precipitation is free of iridium, the iridium loss rate is low, effectively reducing iridium loss in the organic liquid evaporation and concentration steps, and the HF removes tantalum, allowing direct dissolution of IrO2 in aqua regia, improving efficiency and reducing iridium loss during the process.

To provide a nano-sized tantalum oxide particle with high specific surface area and excellent crystallinity, and a manufacturing method thereof.SOLUTION: A crystalline tantalum oxide particle has an average particle diameter (Dm) of 10 to 100 nm and a crystallite diameter (CS) of 10 to 100 nm.SELECTED DRAWING: Figure 2

A capacitor 1a is provided with a tantalum metal 10, a conductor 20, and a tantalum oxide film 30. And a tantalum oxide film (30) that is in contact with the tantalum metal (10) and is disposed between the tantalum metal (10) and the conductor (20). The tantalum oxide film 30 includes a first site 31 and a second site 32. The first site 31 contains fluorine. The second portion 32 is located closer to the metal tantalum 10 than the first portion 31 in the thickness direction of the tantalum oxide film 30. In the tantalum oxide film (30), the concentration of fluorine in the second region (32) is lower than the concentration of fluorine in the first region (31). The ratio (d1 / d0) of the thickness (d1) of the first portion to the thickness (d0) of the tantalum oxide film (30) is greater than 0.4 and 0.8 or less.

The invention relates to a tantalum powder preparation device and a tantalum powder preparation method. The tantalum powder preparation device comprises: a reaction container, in which a vessel is arranged, the vessel is used for containing materials for preparing tantalum powder, and the materials comprise tantalum oxide and magnesium powder; the collector is arranged in the reaction container, the collector comprises a top wall, a bottom wall and a circumferential side wall connected with the top wall and the bottom wall, the bottom wall covers the upper part of the vessel and is provided with a plurality of first through holes, the top wall is provided with a second through hole communicated with an evacuation pipeline, and the bottom wall is provided with a plurality of second through holes communicated with the evacuation pipeline. The collector is configured to collect magnesium vapor entering the collector through the plurality of first through holes. The residual excessive magnesium in the material is collected by the collector, so that the magnesium content in the final tantalum powder product can be obviously reduced, and the purity of the tantalum powder and the performance stability of the product are improved. And moreover, the metal magnesium collected by the collector can be recycled after being purified, so that the reutilization of resources is realized, the consumption of raw materials is reduced, and the potential pollution of magnesium-containing wastes to the environment is reduced.

A method for reducing tantalum oxide by an alkaline earth metal to produce tantalum powder for a capacitor, prepared tantalum powder, an anode block made of the tantalum powder, and a use of the tantalum powder in the manufacturing of a capacitor. The present invention specifically relates to a method for reducing tantalum oxide by an alkaline earth metal such as magnesium, preferably magnesium particles, to produce tantalum powder. The method comprises a reduction process and a heat maintaining process carried out in a hydrogen-containing atmosphere. Preferably, the hydrogen-containing atmosphere is pure hydrogen or a mixed gas of hydrogen and an inert gas; and / or the hydrogen-containing atmosphere is obtained by introducing a gaseous hydrogen-containing gas, or by adding a hydrogen-containing substance and causing same to release hydrogen.

The utility model relates to the technical field of film coatings, in particular to a coating preparation device which comprises a base and a shell, the shell and the base define a containing cavity, a reaction groove is formed in the base in a concave mode, the reaction groove is located in the containing cavity, the base is detachably connected with a bearing piece used for supporting a relay ring, and the bearing piece is located in the containing cavity. The shell is provided with a guide face, the guide face and the side face of the bearing part are arranged on the two opposite sides of the reaction tank respectively, the guide face is obliquely arranged in the direction facing the bearing part, and an air hole is formed in the top of the shell. The distribution of gas density is improved, diffusion and dilution of gas away from a tantalum source and a carbon-based reaction tank are reduced, the gas tightness of the tantalum oxide atmosphere in the length direction of the relay ring is uniform, tantalum oxide reacts with a carbon base on the surface of the relay ring to form a uniform tantalum carbide coating, and the quality and performance of the coating are ensured.

The invention belongs to the technical field of material science and engineering, and discloses calcining equipment for preparing high-purity tantalum oxide, which comprises a workbench, a fluotantalic acid solution produced by a tantalum-niobium liquid-liquid extraction method is used as a raw material, ammonia water and ammonia gas are used for neutralizing and precipitating, and the high-purity tantalum oxide is prepared by controlling different factors such as ammonia water concentration, tantalum liquid concentration, ammonia flushing speed and neutralizing temperature. Tantalum oxide particles are produced, then the produced tantalum oxide particles are poured into the spherical shell, the calcining crucible is started, heat conduction is conducted on the tantalum oxide particles in the spherical shell through temperature rising of the calcining crucible, and therefore the tantalum oxide particles are calcined, meanwhile, the motor is driven, and the motor drives the rotating shaft and the spherical shell to rotate; in the rotating process of the spherical shell, the tantalum oxide particles can be subjected to rolling heating at the bottom of the inner wall of the spherical shell, the calcining effect on the tantalum oxide particles is improved, the tantalum oxide particles can be heated more uniformly, the conversion efficiency of the tantalum oxide particles can be increased, and the surface structure of the particles can be optimized.

The method comprises the following steps: placing monocrystal crystalline flake graphite powder in powder ALD equipment for tantalum oxide deposition to obtain monocrystal crystalline flake graphite powder subjected to ALD treatment, mixing the monocrystal crystalline flake graphite powder with a high polymer, placing the mixture in a ball milling tank, and mechanically and uniformly mixing to obtain a mixture; preparing the mixture into a tableting sample by using tableting equipment, assembling the tableting sample into a synthesis block of a cubic press, and pressing to obtain graphene and two-dimensional diamond; according to the method, the stable large-size two-dimensional diamond and graphene can be obtained, the method has the advantages of being simple in preparation process, wide in parameter adjustable range, not limited to the substrate technology and the like, and the method has important significance on development of research on the two-dimensional diamond and graphene and implementation of application of the two-dimensional diamond and graphene.

Provided are a semiconductor device, an electronic apparatus including the semiconductor device, and / or a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, an oxide semiconductor layer on the substrate, a first electrode on the oxide semiconductor layer, a second electrode on the oxide semiconductor layer and apart from the first electrode, and a first layer, a second layer, and a third layer in at least one of a region between the oxide semiconductor layer and the first electrode and a region between the oxide semiconductor layer and the second electrode. The second layer includes at least one selected from tantalum oxide, niobium oxide, strontium oxide, and aluminum oxide.

The invention relates to the field of solid electrolyte sintering, in particular to an optimized sintering preparation method of a lithium lanthanum zirconium tantalum oxide solid electrolyte, and the modified lithium lanthanum zirconium tantalum oxide solid electrolyte is prepared by adding a low-melting-point metal oxide bismuth oxide sintering aid. The preparation method comprises the following steps: synthesizing a tantalum-doped lithium lanthanum zirconium tantalum oxide solid-state electrolyte by a high-temperature solid-phase method, mixing lithium lanthanum zirconium tantalum oxide and bismuth oxide according to a certain proportion, and sintering to obtain the modified lithium lanthanum zirconium tantalum oxide solid-state electrolyte added with the sintering aid.

The invention relates to a single photon avalanche diode detector and a preparation method thereof. The method comprises the following steps: after a deep groove between every two adjacent single-photon avalanche diode units of the single-photon avalanche diode unit array is etched, sequentially growing a first buffer layer, a hafnium oxide layer, an aluminum oxide layer, a tantalum oxide layer, a second buffer layer and an adhesion layer on the surface of the deep groove; and filling the deep trench with a metal layer for surface planarization to obtain the single-photon avalanche diode detector. According to the invention, the ion concentration of metal ions diffused to the working area of the device can be effectively reduced, the possibility of wrong time and distance information feedback of pixels caused by ion pollution is improved, and the imaging quality and the production and manufacturing yield are further effectively improved.

A capacitor includes metallic tantalum, a solid electrolyte, and a tantalum oxide film. The tantalum oxide film is disposed between the metallic tantalum and the solid electrolyte. A first portion includes fluorine. A second portion is in contact with the first portion, the second portion being closer to the solid electrolyte than the first portion in a thickness direction of the tantalum oxide film. A fluorine concentration in the second portion is lower than a fluorine concentration in the first portion.

The invention relates to the technical field of batteries, in particular to a lithium ion secondary battery. Comprising a positive plate, a negative plate and electrolyte, the charging cut-off voltage of the lithium ion secondary battery is greater than or equal to 4.5 V; the positive plate comprises a positive active coating, the positive active coating comprises a positive active substance and a solid electrolyte, the positive active substance comprises lithium cobalt oxide containing an element Al, and the mass content c1 of the element Al in the positive active coating is 6800ppm-15000ppm; the solid electrolyte comprises at least one of lithium aluminum titanium phosphorus oxide, lithium lanthanum zirconium tantalum oxide and lithium lanthanum titanium oxide; the negative plate comprises a negative active coating, and the negative active coating comprises a silicon carbon material; the mass content c2 of the element Si in the negative electrode active coating is 1.5%-20%; the electrolyte comprises a carboxylic ester compound. The battery provided by the invention has high energy density, excellent cycle stability and low-temperature discharge performance.

There is provided a graphene-containing laminate (100) comprising: a substrate (105); a graphene layer structure (110) on the substrate (105); a conformal barrier layer (115) on the graphene layer structure (110), wherein the barrier layer (115) is a dielectric metal oxide or silicon nitride, and has a first thickness which is at least 3 nm; and a dopant layer (120) on the barrier layer (115), wherein the dopant layer (120) is formed of one or more of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, and nickel oxide; wherein the dopant layer (120) has a second thickness, and a ratio of the first thickness to the second thickness is from 1:1 to 1:10.

The preparation method of the tantalum-aluminum alloy disclosed by the embodiment of the present application comprises the following steps: S1, mixing tantalum oxide, metal aluminum and metal magnesium in an oxygen-free environment to obtain mixed raw materials; S2, heating the mixed raw materials to a reaction temperature to cause a self-sustaining reaction; wherein, the metal magnesium in the mixed raw materials reduces the tantalum oxide to generate metal tantalum and magnesium oxide, and the generated metal tantalum forms a tantalum-aluminum alloy with the metal aluminum in the mixed raw materials; S3, removing the magnesium oxide to obtain a tantalum-aluminum alloy powder. The metal magnesium reacts with the tantalum oxide to generate metal tantalum, the generated metal tantalum directly forms a tantalum-aluminum alloy with the raw material metal aluminum, and then the acid solution is used to remove the magnesium oxide to obtain the tantalum-aluminum alloy powder; the tantalum and aluminum in the obtained tantalum-aluminum alloy powder are uniformly distributed, and the oxygen content is low; different compositions of the tantalum-aluminum alloy can be prepared according to the composition ratio of the tantalum-aluminum alloy, the method is simple and easy to operate, and has a good application prospect in the field of tantalum-aluminum alloy preparation.

The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel tungsten tantalum oxide (NiWTaO). This material is particularly beneficial in that it is very transparent in its clear state.

A capacitor (1a) is provided with a tantalum metal (10), a solid electrolyte (20), and a tantalum oxide film (30). The tantalum oxide film (30) is disposed between the metal tantalum (10) and the solid electrolyte (20). The first site 31 contains fluorine. The second portion 32 is in contact with the first portion 31 at a position closer to the solid electrolyte 20 than the first portion 31 in the thickness direction of the tantalum oxide film 30. The concentration of fluorine in the second site 32 is lower than the concentration of fluorine in the first site 31.