Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials

Abstract

Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method includes sequentially exposing a substrate to a hafnium precursor and an oxidizing gas to deposit a hafnium oxide material thereon. In another example, a hafnium silicate material is deposited by sequentially exposing a substrate to the oxidizing gas and a process gas containing a hafnium precursor and a silicon precursor. The oxidizing gas usually contains water vapor formed by flowing a hydrogen source gas and an oxygen source gas through a water vapor generator. In another example, a method includes sequentially exposing a substrate to the oxidizing gas and at least one precursor to deposit hafnium oxide, zirconium oxide, lanthanum oxide, tantalum oxide, titanium oxide, aluminum oxide, silicon oxide, aluminates thereof, silicates thereof, derivatives thereof or combinations thereof.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims benefit of U.S. Provisional Patent Application Ser. No. 60 / 570,173, entitled, “Atomic Layer Deposition of Hafnium-containing High-k Materials,” filed May 12, 2004, which is herein incorporated by reference in its entirety.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] Embodiments of the invention generally relate to methods and apparatuses for depositing materials on a substrate, and more specifically, to methods and apparatuses for depositing high-k dielectric materials by vapor deposition processes. [0004] 2. Description of the Related Art [0005] In the field of semiconductor processing, flat-panel display processing or other electronic device processing, vapor deposition processes have played an important role in depositing materials on substrates. As the geometries of electronic devices continue to shrink and the density of devices continues to increase, the size and aspect ratio of the f...

AI Technical Summary

Problems solved by technology

While conventional chemical vapor deposition (CVD) has proved successful for device geometries and aspect ratios down to 0.15 μm, the more aggressive device geometries require an alternative deposition technique.

While the high reactivity at low temperature is an attribute of the radical oxidizing agents, undesirable side reactions are prevalent throughout the process chamber forming contaminants on the substrate.

However, due to the moderate reactivity of water or oxygen, ALD processes generally require slower flow rates, longer exposure period

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