Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device

A metal-organic chemistry and vapor deposition technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of long distance between tubes, gas is not easy to mix fully and uniformly, etc., to reduce pre-reaction , The production cost is low, and the effect of improving the uniformity

Active Publication Date: 2005-01-12
南昌硅基半导体科技有限公司
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Problems solved by technology

At present, the double-layer inlet nozzles used in chemical vapor deposition equipment are designed with an upper inlet chamber and a lower inlet chamber separated from each other, and different reaction gases enter the reaction chamber through the upper outlet pipe and the lower outlet pipe respectively. The trachea and the lower trachea are arranged at intervals, so there are the following disadvantages: due to the long distance between the upper trachea and the lower trachea, the gas in the two tubes is not easy to mix fully and uniformly, so it is only suitable for low-pressure growth

Method used

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  • Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device
  • Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device

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Embodiment Construction

[0009] The present invention will be described in further detail below in conjunction with the embodiments and with reference to the accompanying drawings.

[0010] The present invention comprises a closed outer shell 1, in which an upper middle plate 4 and a lower middle plate 5 are fixed, a sealed upper air intake cavity 2 is formed between the top plate 3 and the upper middle plate 4, and the upper middle plate 4 forms a sealed lower air intake chamber 9 with the lower middle plate 5, and an upper air intake pipe 17 communicating with the upper air intake chamber 2 and a lower air inlet pipe 17 communicating with the lower air intake chamber 9 are installed on the side wall 14 of the outer casing 1. Trachea 16, the upper air outlet pipe 7 communicating with upper air inlet chamber 2 and reaction chamber 13 is installed between the upper middle layer plate 4 and the base plate 6, and the lower air inlet chamber 9 and the lower air inlet chamber 9 are installed between the low...

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Abstract

This invention discloses a two-layer gas inlet blow head of a metal organic chemical gas phase deposit device including a closed shell having an upper gas inlet cavity and a lower gas inlet cavity, an upper escape pipe communicating with the upper gas cavity and reaction chamber is set between the upper-middle and the base plate and a lower escape pipe communicating with a lower gas inlet cavity and the reaction chamber is set between the lower plate and base plate characterizing that diameter of the lower escape pipe is layer than the upper and the upper is put in the lower. A cooling cavity is designed, the first reaction gas enters into the reaction chamber at the substrate surface from the upper and lower escape pipes separately.

Description

technical field [0001] The invention relates to a nozzle, in particular to a double-layer inlet nozzle for metal organic chemical vapor deposition equipment (CVD). Background technique [0002] When using metal-organic chemical vapor deposition equipment (MOCVD) to prepare semiconductor thin film materials, different reaction gases need to be sent into the reaction chamber, and then the reaction gases are fully mixed on the substrate surface, and the pre-reaction during material preparation is reduced. , thereby improving the performance of the material. At present, the double-layer inlet nozzles used in chemical vapor deposition equipment are designed with an upper inlet chamber and a lower inlet chamber separated from each other, and different reaction gases enter the reaction chamber through the upper outlet pipe and the lower outlet pipe respectively. The trachea and the lower trachea are arranged at intervals, so there are the following disadvantages: due to the long d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/18C23C16/455
Inventor 江风益蒲勇
Owner 南昌硅基半导体科技有限公司
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