47843results about How to "Well mixed" patented technology

Two or more plasma chambers are provided in a radical reactor to generate radicals of gases under different conditions for use in atomic layer deposition (ALD) process. The radical reactor has a body with multiple channels and corresponding process chambers. Each plasma chamber is surrounded by an outer electrode and has an inner electrode extending through the chamber. When voltage is applied across the outer electrode and the inner electrode with gas present in the plasma chamber, radicals of the gas is generated in the plasma chamber. The radicals generated in the plasma chamber are then injected into a mixing chamber for mixing with radicals of another gas from another plasma chamber, and injected onto the substrate. By providing two or more plasma chambers, different radicals of gases can be generated within the same radical reactor, which obviates the need for separate radical generators.

The present invention provides a system and method relating to the operation of plug-in hybrid electric vehicles powered both by electricity from rechargeable batteries and by consumable fuel powered means, such as an internal combustion engine or a fuel cell. More particularly, the system and method of the claimed invention enable optimization of the energy cost associated with the operation of such plug-in hybrid electric vehicles, especially when the cost of recharging batteries from external electric power sources may be less than the cost of recharging batteries from the onboard consumable fuel powered means. To this end, the invention enables maximization of the use of electricity from external electric power sources and minimization of the use of electricity produced by the plug-in hybrid electric vehicle's onboard consumable fuel powered means, when the cost of recharging batteries from external electric power sources is less than the cost of recharging batteries from the onboard consumable fuel powered means.

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

This invention discloses a two-layer gas inlet blow head of a metal organic chemical gas phase deposit device including a closed shell having an upper gas inlet cavity and a lower gas inlet cavity, an upper escape pipe communicating with the upper gas cavity and reaction chamber is set between the upper-middle and the base plate and a lower escape pipe communicating with a lower gas inlet cavity and the reaction chamber is set between the lower plate and base plate characterizing that diameter of the lower escape pipe is layer than the upper and the upper is put in the lower. A cooling cavity is designed, the first reaction gas enters into the reaction chamber at the substrate surface from the upper and lower escape pipes separately.

An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes an across-flow liner to improve gas flow uniformity across the surface of each substrate. The across-flow liner of the present invention includes a longitudinal bulging section to accommodate a across-flow injection system. The liner is patterned and sized so that it is conformal to the wafer carrier, and as a result, reduces the gap between the liner and the wafer carrier to reduce or eliminate vortices and stagnation in the gap areas between the wafer carrier and the liner inner wall.

An assortment of color elements is grouped within a plurality of color families which are organized in accordance with a circular color chart (FIG. 10-A) and a columnar chart (FIG. 11-A). Except for the neutral-gray color family, a pair of boundary-hues respectively defines the extent of acceptable hue variation within each group, resulting in an included range of hue within each color family, and an excluded range of hue in between neighboring color families. Variant-hue charts enhance color comparison and selection within each main color family by displaying contrasting variations of all three color attributes, that is, value, saturation, and hue, within a single chart. Variant-hue charts also consolidate color elements into a compact format, and provide a graphical user interface for computer color selection.

An apparatus configured for connection to a mixer for receiving a slurry and altering the flow characteristics of the slurry includes a conduit having a main inlet in slurry receiving communication with the mixer outlet and extending to a spout for discharging the slurry, at least one conduit restrictor associated with the conduit for creating back-pressure between the conduit restrictor and the mixer outlet for keeping the mixer full, and at least one pressure reducer associated with the discharge spout and configured for reducing the pressure of the slurry dispensed from the discharge spout. The apparatus is configured for maintaining a generally laminar flow from the mixer outlet to the discharge spout.

The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

A first set of orange LEDs with a peak wavelength emission of about 612 nanometers, a second set of red light emitting LEDs with a peak wavelength of about 660 nanometers, and blue light LEDs. Two beam spreads, 15° and 30°, were provided for both the 660 nm LEDs and 612 nm LEDs. When directed perpendicularly upon tops of the plant leaves, 10% light transmission occurred through the leaves for the 30° LEDs, and 80% light transmission for the 15° LEDs. Thus, fully 50% of the orange/red spectrum primarily used for photosynthesis was transmitted through the upper leaf canopy, making it available to support photosynthesis in leaves below. LED lamps are positioned at varying distances from the growing plants for controlling plant growth rates that vary with these distances, thereby to control plant inventory, because growth of plants can be greatly slowed to preserve them during periods of slow sales.

A novel light mixing plate and a direct backlight module using the light mixing plate are provided herein. The light mixing plate has a first surface and a second surface, in which a number of indented grooves are configured along the first surface to accommodate the LED light sources. The lights from the LEDs enter the light mixing plate via the side walls of the grooves and propagate an extended distance inside the light mixing plate so that they are fully mixed with each other into a uniform planar white light when leaving the light mixing plate via the second surface.

An electrochlorination and electrochemical system for the on-site generation and treatment of municipal water supplies and other reservoirs of water, by using a custom mixed oxidant and mixed reductant generating system for the enhanced destruction of water borne contaminants by creating custom oxidation-reduction-reactant chemistries with real time monitoring. A range of chemical precursors are provided that when acted upon in an electrochemical cell either create an enhanced oxidation, or reduction environment for the destruction or control of contaminants. Chemical agents that can be used to control standard water quality parameters such as total hardness, total alkalinity, pH, total dissolved solids, and the like are introduced via the chemical precursor injection subsystem infrequently or in real time based on sensor inputs and controller set points.

A microfluidic device comprises first and second inlet passages (13) for respective immiscible fluids, these inlet passages merging into a third passage (8) along which the two fluids flow under parallel laminar flow conditions, the third passage being formed with a constriction or other discontinuity (9) causing the two fluids to form into a flow of alternate segments.

A grip for the handle of a golf club having multiple two layer panels that are wrapped about an underlisting sleeve. The edges of the panels are adhesively sealed together. The grip reduces impact and shock and provides a feeling of tackiness in the manner of a spirally wrapped polyurethane-felt grip while allowing the use of multiple color panels and easy instillation onto a golf club shaft.

A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be deposited on a substrate to form a precursor layer. The precursor material comprising group IB, IIIA, and/or VIA based particles. The bandgap grading material of the alloy may be deposited after depositing the precursor material. The alloy in the grading material may react after the precursor layer has begun to sinter and thus maintains a higher concentration of IIIA material in a portion of the compound film that forms above a portion that sinters first.