This disclosure provides a method for fabricating a
laser chip and the
laser chip itself. An N-type Inp layer is grown on a substrate. A first
active layer, a conductive layer, and a second
active layer are sequentially grown on top of the N-type Inp layer. A P-type Inp layer, a
contact layer, and a
mask layer are sequentially grown on top of the first, conductive, and second active
layers. Using the
mask layer as a
mask, the
contact layer is etched at a first position above the first
active layer, a second position below the conductive layer, and a third position below the second active layer. A
passivation layer is deposited, and mask
etching is performed at the middle position of the
passivation layer. Using the
mask layer and the
passivation layer as masks,
etching is performed at the middle position of the N-type Inp layer down to below the N-type Inp layer. A first element is
ion-implanted into the N-type Inp layer at an angle. By using angled
ion implantation, the first element is implanted into the N-type Inp layer below the conductive layer, ensuring that the
ion implantation depth of the N-type Inp layer meets the required standards.