The invention relates to the technical field of intelligent
integrated devices, in particular to a vertical fin type display sensing module and a preparation method thereof.The module comprises a driving backboard and an
anode on the driving backboard, the
anode is provided with a
semiconductor fin type structure, the
semiconductor fin type structure comprises an n + GaN layer and a graphical n-GaN epitaxial layer, a protruding fin part with a notch is formed, and the n + GaN layer is arranged on the n + GaN layer. A P + region and a P + + region are formed by
ion implantation on the side walls of the gap and the fin part, an N + region is formed at the top, a grid
electrode is arranged on the P + + region, a
metal layer and a transparent
conductive oxide layer are arranged on the N + region, and a light-emitting unit is bonded on the transparent
conductive oxide layer; the
image sensing unit is overlapped with the projection of the fin type structure and comprises a light filtering layer and a micro lens. The preparation method comprises the steps of patterning to form the fin type structure, performing selective
ion implantation to realize P / N region
doping, and transferring and bonding the light-emitting unit in a huge amount. High-performance driving and sensing functions are integrated on a
single chip through a GaN fin type structure, the problems of low performance, complex process and high cost in the prior art are solved, and integrated fusion of display and sensing is achieved.