114results about How to "Effective coloring" patented technology

A hair-treating composition containing a diester or polyester of a naphthalene dicarboxylic acid having compound formula (I) or (II), or mixtures; for imparting gloss and / or hair color stabilization:wherein each R1, same or different, is an alkyl group having 1 to 22 carbon atoms, a diol having the structure HO-R2-OH, or a polyglycol having the structure HO-R3-(-O-R2-)m-OH, wherein R2 and R3, same or different, are each an alkylene group, sight chain or branched, having 1 to 6 carbon atoms, and wherein m and n are each 1 to about 100, or a mixture thereof. These diesters and polyesters of formula (I) or (II) are quite effective in stabilizing the dibenzoylmethane derivative UV-A filter compounds making them more effective, and effective for longer periods of time.

The present invention aims to provide an ink which has a sufficiently large area factor even in a small ink droplet quantity and can obtain images having a high image density, and further has a superior storage stability. According to the present invention, a cyan ink is provided which is used in an ink set having four kinds of aqueous inks consisting of a cyan ink, a magenta ink, a yellow ink and a black ink in which each ink comprises at least water, a water-insoluble coloring material, and a plurality of water-soluble organic solvents having a good medium or good mediums for the water-insoluble coloring material and a poor medium or poor mediums for the water-insoluble coloring material, wherein, the ratio B1 / A1 is from 0.5 or more to 3.0 or less, where A1 denotes the total content (mass %) of the good medium based on the total mass of the cyan ink and B1 denotes the total content (mass %) of the poor medium based on the total mass of the cyan ink, and a water-soluble organic solvent which shows the maximum Ka value among the respective Ka values of the plurality of water-soluble organic solvents as determined by the Bristow method is the poor medium.

Structures and methods for three-dimensional image sensing using high frequency modulation includes CMOS-implementable sensor structures using differential charge transfer, including such sensors enabling rapid horizontal and slower vertical dimension local charge collection. Wavelength response of such sensors can be altered dynamically by varying gate potentials. Methods for producing such sensor structures on conventional CMOS fabrication facilities include use of “rich” instructions to command the fabrication process to optimize image sensor rather than digital or analog ICs. One detector structure has closely spaced-apart, elongated finger-like structures that rapidly collect charge in the spaced-apart direction and then move collected charge less rapidly in the elongated direction. Detector response is substantially independent of the collection rate in the elongated direction.

CMOS implementable three-dimensional silicon sensors are fabricated using a standard fab but using augmented rules that create mask patterns not expressible with existing fab rules. Standard fab rules are not optimized to produce high quality three-dimensional silicon sensors. Accordingly, the normal set of rules does not permit creating the fab mask patterns necessary for high performance such sensors. However, the present invention can use the fab standard mask set with a rich set of fab instructions to express mask patterns from the mask set that would not otherwise be expressible. The resultant method enables high quality silicon sensors for three-dimensional sensing to be readily mass produced from a standard fab.