The invention relates to the field of semiconductors, and discloses an
image sensor, a manufacturing method thereof and a pixel structure.The method comprises the steps that a preprocessing substrate is obtained, and the preprocessing substrate comprises a substrate, a
gate oxide layer, a graphical
polycrystalline silicon layer and a graphical
hard mask layer, and the
gate oxide layer, the graphical
polycrystalline silicon layer and the graphical
hard mask layer are sequentially stacked on the surface of one side of the substrate; forming a patterned
photoresist layer in a local region of the surface, deviating from the patterned
polycrystalline silicon layer, of the patterned
hard mask layer, performing a lightly doped drain process, and forming an
ion implantation region in a
transistor well region of the substrate; and sequentially removing the patterned
photoresist layer and the patterned hard
mask layer. The lightly-doped drain
electrode process is carried out before the patterned hard
mask layer is removed, due to the existence of the patterned hard
mask layer, the selection range of
ion implantation energy in the lightly-doped drain
electrode process can be enlarged, then the
electric field near the junction of the overlapped area of the grid
electrode and the drain electrode can be adjusted to be minimum, the number of white points is reduced, and the imaging effect is improved.