The present disclosure provides a
semiconductor structure, a method for forming a
semiconductor structure and a memory, and relates to the technical field of
semiconductor. The
semiconductor structure comprises: a substrate, a first trench is formed in the substrate; a
dielectric layer, covering the inner surface of the first trench, the
dielectric layer at least comprises a sidewall
dielectric layer located on the sidewall of the first trench and a bottom
dielectric layer located on the bottom of the first trench; the sidewall
dielectric layer and the bottom
dielectric layer located in the same first trench form a word line trench, the word line trench comprises an
edge region close to the sidewall dielectric layer and an
intermediate region between the edge regions; a word
line structure located in the word line trench, the word
line structure comprises an edge word line layer located in the
edge region and an intermediate word line layer located in the
intermediate region; the upper surface of the intermediate word line layer is not lower than the upper surface of the edge word line layer. The present disclosure can improve the GIDL problem of semiconductor devices.