16303 results about "Condensed matter physics" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention discloses a magnetic field measurement method and system based on a multi-sensor fusion technology, and relates to the technical field of sensor fusion and magnetic field measurement, and the method comprises the steps: deploying a multi-sensor data array, carrying out the adaptive initialization of a bistable SR parameter range, defining an SR system differential equation, and carrying out the iterative optimization through employing an MPA population. Carrying out Hilbert transform edge detection on enhanced signal component data, calculating an array inclination angle, carrying out abbe error and bidirectional projection error compensation, and carrying out metasurface grid coordinate quantization mapping; the collected and cross-scale magnetic field data set is preprocessed and packaged into data cells, quality evaluation and weight distribution are carried out on the data cells, and extended Kalman filtering data fusion is carried out; by introducing a bistable stochastic resonance system and an MPA population optimization algorithm, a weak magnetic field signal is obviously enhanced, and by calculating an array inclination angle and compensating an Abbe error and a bidirectional projection error, the space consistency of a measurement result is improved.

The invention discloses a flexible magnetic tactile sensing device based on a microstructure elastic layer, a three-dimensional force measuring device and a measuring method.The flexible magnetic tactile sensing device comprises a flexible magnetic film, the microstructure elastic layer, a Hall sensor, a PCB and a bottom shell, the Hall sensor is installed on the PCB, and the flexible magnetic film, the microstructure elastic layer, the PCB and the bottom shell are sequentially stacked from top to bottom; the microstructure elastic layer is of a non-planar structure, when the flexible magnetic film deforms due to stress, deformation of the flexible magnetic film is transmitted to the microstructure elastic layer, the change of the three-axis magnetic field intensity is measured through the Hall sensor and uploaded to a PC terminal for data processing, and three-dimensional force measurement is achieved. Three-dimensional force measurement can be achieved, the flexible magnetic film can generate local deformation in the normal direction when normal force is applied, the flexible magnetic film can generate tangential displacement when tangential force is applied, and application scenes suitable for different microstructure elastic layers are provided according to quantitative analysis results.

The invention relates to the technical field of magnetic ring detection, discloses a magnetic ring multi-dimensional nondestructive detection system and method based on multi-frequency composite electromagnetic excitation, and solves the defects of existing magnetic ring detection in the aspects of information acquisition, composite excitation and comprehensive diagnosis. The method comprises the following steps: applying multi-frequency composite excitation, and collecting and preprocessing multi-dimensional response; and extracting features, and carrying out deep learning fusion inversion to obtain magnetic characteristics, material components and defect information. The system comprises a composite excitation module, a multi-mode sensing module, a data acquisition preprocessing module, a data fusion inversion module and a control module. By adopting the technical scheme, comprehensive and efficient nondestructive detection of multi-dimensional electromagnetic information of the magnetic ring is realized, the existing limitation is overcome, and the detection precision and the comprehensive diagnosis capability are remarkably improved.

The invention relates to a solidified soil proportion and strength prediction method and system based on SEM image analysis, and belongs to the technical field of solidified soil strength testing. Comprising the following steps: S1, measuring physical indexes of disturbed soil; s2, multi-working-condition sample preparation and maintenance; s3, fractal dimension calculation of the SEM image is carried out; s4, unconfined compressive strength testing; s5, establishing a microstructure inversion model and a macroscopic strength prediction model; and S6, proportion optimization and strength prediction: utilizing the microstructure inversion model and the macroscopic strength prediction model to carry out solidified soil proportion optimization or strength prediction. According to the method, the quantitative relation between the microstructure (fractal dimension) and the macroscopic strength is established through SEM image analysis, the defects in the prior art are overcome, and a brand new technical path is provided for resource utilization of disturbed soil.

When x-ray fluorescence (“XRF”) spectroscopy is utilized to classify materials transported on a moving conveyor belt, there is the possibility of the x-ray beam only partially irradiating the material piece, which can result in the capture of an inaccurate XRF spectrum needed to classify the material piece. This can lead to an improper (erroneous) classification and resultant sortation of material pieces (e.g., aluminum alloys). In a material handling system, the area of the intersections between the x-ray beam spots from an x-ray fluorescence system and the material pieces are measured and correspondingly used to correct the measured XRF spectrum associated with each material piece. The material pieces can then be sorted according to the corrected XRF spectrum.

The invention relates to the technical field of electromagnetic coils, in particular to a laminated special-shaped plane spiral coil winding. The laminated special-shaped planar spiral coil winding is composed of at least two coil layers, and each coil layer is composed of a single special-shaped planar spiral coil. The inner ring part of the special-shaped plane spiral coil is a concentric plane spiral coil, and the outer ring part of the special-shaped plane spiral coil is a tooth-shaped spiral coil extending along the outer periphery of the concentric plane spiral coil; all phases of the coil winding are different in layer, the electrified magnetic field center of each coil layer deviates from the geometric center, and the projection of the magnetic field center of each phase in the plane of the coil winding is in central symmetry distribution. The invention innovatively provides a laminated special-shaped planar spiral coil winding, and provides a squirrel-cage equivalent rotor on the basis of the laminated special-shaped planar spiral coil winding, so as to provide competitive choices for reducing copper loss and improving heat dissipation, magnetic conductivity, structural strength and economic cost of an axial flux motor winding.

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention relates to a super junction power device and a preparation method thereof. The preparation method comprises the following steps: providing a silicon carbide substrate; a silicon carbide epitaxial layer is formed on the top surface of the silicon carbide substrate, the silicon carbide epitaxial layer has first type impurity ions, a plurality of doped columns are formed in the silicon carbide epitaxial layer, the doped columns have second type impurity ions, and the doped columns are formed through an etching process and an epitaxial process or through a multi-step epitaxial process and a multi-step ion implantation process; forming a body region in the surface, far away from the silicon carbide substrate, of the silicon carbide epitaxial layer, wherein the body region has second type impurity ions; forming a source region between the doped columns, wherein the source region is provided with a first type of foreign ions; forming a first groove penetrating through the source region and the body region between the adjacent doped columns, and forming a second groove penetrating through the body region above the doped columns; forming a gate structure in the first groove; and forming a source trench structure in the second trench. The on resistance of the super junction power device is reduced, and the voltage withstanding characteristic of the super junction power device is improved.

The invention belongs to the technical field of semiconductor device packaging, and discloses a power semiconductor module three-dimensional stacking vertical commutation low-inductance packaging structure. The two vertical commutation structures are stacked and integrated on the same substrate; different from traditional two-dimensional packaging in which all elements are laid on a two-dimensional plane, three-dimensional stacked packaging suitable for power devices is proposed for the first time, and power loops are stacked and integrated; the magnetic fluxes of the stacked power loops are cancelled, so that ultra-low inductance (pH level) integration is realized; under the condition that the areas of the substrates are the same, the capacity of the module is doubled; meanwhile, dynamic current sharing design is considered, and one driving chip simultaneously drives eight GaN chips to realize parallel dynamic current sharing for the first time; the method is suitable for various topological structures including half-bridge structures, full-bridge structures, three-level ANPC structures and the like; the method is suitable for various packaging schemes, including PCB on DBC packaging, DBC substrate welding / sintering packaging and embedded packaging. Taking the packaging of the half-bridge module double-sided parallel PCB on DBC as an example, low-inductance, low-thermal-resistance and high-power-density integration is realized.

The invention provides a permanent magnet motor based on permanent magnet included angle optimization and a cogging torque suppression method thereof.The permanent magnet motor comprises a stator iron core, an armature winding, rotor iron cores and permanent magnets, and each pole of rotor iron core is provided with two sets of first V-shaped permanent magnet grooves and second V-shaped permanent magnet grooves which are symmetrical about the center line of the rotor iron core and are different in size; the permanent magnets are arranged in the first V-shaped permanent magnet grooves and the second V-shaped permanent magnet grooves respectively, the permanent magnets in the first V-shaped permanent magnet grooves and the second V-shaped permanent magnet grooves are arranged in a V-V shape, the included angle between the permanent magnets in the first V-shaped permanent magnet grooves is alpha, the included angle between the permanent magnets in the second V-shaped permanent magnet grooves is beta, and the permanent magnets in the first V-shaped permanent magnet grooves and the permanent magnets in the second V-shaped permanent magnet grooves are separated by the aid of an NSGA-II algorithm under the condition that the distance of the magnetic isolation bridge is unchanged. By adjusting the angle between the permanent magnets in the first V-shaped permanent magnet grooves and the second V-shaped permanent magnet grooves, the best matching combination of the small permanent magnet included angle alpha and the large permanent magnet included angle beta is optimized, and the arc-shaped auxiliary grooves are formed in the surface of the rotor iron core, so that the cogging torque of the permanent magnet motor is optimized.

The present invention relates to a magnetic resonance system and a gradient amplifier filter for a magnetic resonance system. The filter includes a plurality of non-magnetic core inductors and a printed circuit board having a multilayer structure, a plurality of filter capacitors being formed in a plurality of regions of the printed circuit board, respectively, wherein each non-magnetic core inductor is provided on the printed circuit board and spanning two of the plurality of filter capacitors.

The embodiment of the invention provides a microresonator and a preparation method of the microresonator, the microresonator can be obtained by connecting an MIM plate capacitor and an inductor of a planar coil structure, and an upper electrode, a lower electrode and the inductor of the MIM plate capacitor and a microstrip line connecting the capacitor and the inductor are all prepared from superconducting materials. A dielectric layer of the MIM plate capacitor can be prepared by adopting an ALD technology, a dielectric film grown by adopting the ALD technology is very compact and has very good thickness uniformity, a relatively high dielectric constant can be realized, and the quality factor of the microresonator can be remarkably improved by combining the zero resistance characteristic of a superconducting material; and the miniaturization of the microresonator can be realized. Moreover, in the preparation process, the three layers of thin films for forming the capacitor and the inductor are formed through deposition firstly, and then the three layers of thin films are patterned layer by layer, so that introduction of excessive impurities can be avoided, interlayer contact can be optimized, and the risk of electric leakage can be reduced.

The invention relates to the technical field of MOS (metal oxide semiconductor), and discloses a low-on-resistance SiC MOSFET (metal oxide semiconductor field effect transistor) terminal structure, which consists of a plurality of parallel MOS cells, and is characterized in that each MOS cell comprises a drain electrode, a semiconductor epitaxial layer, a source electrode, a grid electrode and a grid oxide layer, the semiconductor epitaxial layer sequentially comprises an N substrate layer, an N drift layer, a P well layer and an N well layer from bottom to top, P + layers are arranged on the two sides of the P well layer and the N well layer in a single MOS cell, a heavily doped N-layer is formed in the semiconductor epitaxial layer of the single MOS cell through ion implantation, and the heavily doped N-layer is located below the P well layer and is in contact with the P well layer. The heavily doped N-layer is additionally arranged below the P well layer to form a vertical low-resistance path, the uniformity of a grid electric field is destroyed in combination with the conduction P region, suppression of the grid on charge diffusion of a drain is weakened, the conduction resistance is greatly reduced compared with a traditional structure, and then the conduction current is greatly improved.

The utility model discloses a semiconductor device, which belongs to the field of semiconductors, and at least comprises a substrate; the well region is arranged in the substrate; the two drift regions are arranged in the well region at intervals, and shallow trench isolation structures are arranged in the drift regions; the body region is arranged in the well region between the two drift regions; the vertical grid electrode is located in the body region, and the vertical grid electrode extends into the well region from the surface of the substrate; the source doped regions are respectively arranged in the body regions on the two sides of the vertical grid electrode; the drain doping region is arranged in the drift region; and the planar grid electrode is arranged around the vertical grid electrode and the source doping region and covers part of the body region, part of the well region and part of the shallow trench isolation structure. According to the semiconductor device provided by the utility model, the characteristic on-resistance can be reduced and the performance of the semiconductor device can be improved under the condition that the breakdown voltage is not changed.

The invention belongs to the technical field of single crystal growth equipment, and particularly relates to a seed crystal clamping assembly, in particular to a seed crystal pulling assembly, a silicon carbide single crystal growth device and a use method of the silicon carbide single crystal growth device. The seed crystal lifting assembly comprises a lifting rod and a lifting rod, a rotating head; wherein a cavity is formed in the wall body of the rotating head, and a groove is formed in the middle of the rotating head; and fan blades are fixedly arranged in the grooves. The fan blades are arranged in the rotating head, the unique airflow channel is designed, the lifting rod rotates to drive the fan blades to work, and forced airflow circulation is formed, so that the problem that the radial temperature difference of a crystal growth face is large is solved, back heat dissipation of seed crystals is remarkably improved, and the interface stability of crystal growth is improved. And meanwhile, the growth speed can be directly regulated and controlled in time by adjusting the rotating speed of the lifting rod, so that the growth efficiency and the crystal quality are synergistically improved.

The invention provides a transformer magnetic field prediction method and system based on a physical information neural network, and the method comprises the steps: inputting a magnetic field distribution diagram sample of a transformer into a U-Net model, and obtaining a predicted magnetic field image, outputted by the U-Net model, of the transformer; determining a data driving loss function according to the pixel difference between the predicted magnetic field image of the transformer and the target magnetic field image, determining the magnetic field energy density of the transformer according to the predicted magnetic field image of the transformer, and determining a physical loss function according to the magnetic field energy density of the transformer; determining a comprehensive loss function according to the data-driven loss function and the physical loss function, and training the U-Net model by using the comprehensive loss function; and inputting the current magnetic field distribution diagram of the transformer into the trained U-Net model to obtain a current predicted magnetic field image of the transformer. According to the method, the deep learning model and the physical loss constraint are fused, and the precision, the physical consistency and the generalization ability of transformer magnetic field prediction are remarkably improved.

The invention belongs to the technical field of superconducting wires, and relates to a niobium-tin composite superconducting wire and a preparation method thereof. The invention provides a Nb3Sn composite superconducting wire. The Nb3Sn composite superconducting wire sequentially comprises an Nb3Sn superconducting wire core, a barrier layer, a stable layer, a transition layer, a substrate layer and a functional layer from inside to outside, the transition layer is formed by mixing copper and a dielectric polymer, and the copper content is continuously decreased in a gradient manner from inside to outside; the substrate layer is the dielectric polymer; the functional layer is a plurality of protruding metal microstructures. According to the invention, the functional layer with the broadband electromagnetic stealth function is integrated on the basis of the Nb3Sn superconducting wire rod, so that the radar cross section is obviously reduced while the Nb3Sn superconducting wire rod bears high-density superconducting current and generates a strong magnetic field, and the technical problem that a high-field superconducting magnet system is easy to detect in an electromagnetic environment is solved.

The invention relates to a multi-pole magnetic field magnetizing test method and a spiral winding group thereof, and relates to the field of automatic magnetizing technology, and the method comprises the steps: constructing a test model, importing design parameters of a magnet to be tested, determining a multi-pole magnetic field distribution theoretical model, and defining a magnetic pole region and a key feature contour line; acquiring magnetic field data, scanning the surface of the magnetized magnet by using an array probe, and acquiring magnetic field intensity actual measurement data of a multi-dimensional coordinate; matching a magnetic pole contour, comparing an actually measured contour line with a theoretical contour line, and establishing sampling point mapping; correcting the deviation data, screening the deviation sampling points exceeding the threshold value, and determining magnetizing process adjustment parameters; and evaluating the magnetizing efficiency, carrying out iterative magnetizing based on the correction parameters, and generating an evaluation report containing indexes such as magnetic field uniformity and the like. The method has the effect of improving the magnetic field intensity and stability of the magnet during orientation magnetization.

The invention is applicable to the technical field of magnetic field measurement, and provides a current sensor magnetic field measurement method based on a tunneling magnetoresistance effect, which comprises the following steps of: analyzing a real-time output signal through a machine learning algorithm based on a mapping relation model of a parasitic capacitance parameter and a signal characteristic of a tunneling magnetoresistance sensor circuit; determining an actual value of a parasitic capacitance parameter; controlling a negative capacitance generation circuit and a numerical control resistance network to adjust an equivalent negative capacitance value and a resistance value according to the actual value of the parasitic capacitance parameter, and generating a matched compensation parameter set; feature extraction is carried out on the compensated signal, and an effective magnetic field component is obtained through multi-resolution time domain decomposition and phase consistency detection; calculating the magnetic field intensity and the change gradient based on the effective magnetic field component, and determining the effective working frequency range of the sensor according to the signal attenuation characteristic; and dynamically adjusting a compensation strategy according to a comparison result of the effective working frequency range and a preset target frequency band, and reducing measurement errors.

A subsurface safety valve for a wellbore for production of fluids from a subsurface formation comprises a drive portion and an actuator portion. The drive portion comprises a first magnet assembly and the actuator portion comprises a second magnet assembly that is magnetically coupled to the first magnet assembly. At least one of the first magnet assembly or the second magnet assembly comprises a spatially rotated array of magnets arranged such that a magnetic field emitted from an operative side of the spatially rotated array of magnets facing a magnetic coupling is non-zero and such that the magnetic field emitted from a non-operative side of the spatially rotated array of magnets that is opposite the operative side is about zero.

A structure of a rotor changeable of a magnetic force is provided, which includes a rotor core and a plurality of magnetic pole parts disposed therein. Each magnetic pole part includes a radially-magnetized fixed magnetic-force magnet and a circumferentially-magnetized variable magnetic-force magnet. A cavity part is disposed between the fixed magnetic-force magnet and the variable magnetic-force magnet. The cavity part has a cross-section extending from an end part of the fixed magnetic-force magnet toward an opposing surface. The cavity part is formed so that a distance between the variable magnetic-force magnet and the cavity part in the circumferential direction becomes larger as the cavity part approaches the opposing surface, and a width of the cavity part in the circumferential direction becomes smaller as the cavity part separates from the fixed magnetic-force magnet in the radial direction.

The invention provides a multi-magnetic-circuit single-magnetic-ring dual-modulation three-rotor coaxial magnetic gear and an automobile hub motor, the magnetic gear comprises an inner rotor, a T-shaped dual-modulation magnetic ring, an intermediate rotor and an outer rotor, the inner rotor, the T-shaped dual-modulation magnetic ring and the intermediate rotor are nested in sequence and are coaxially configured to form a radial and modulation coaxial magnetic gear structure; the middle rotor, the T-shaped dual-modulation magnetic modulation ring and the outer rotor are sequentially nested and coaxially arranged to form an axial and modulation coaxial magnetic gear structure; and sum modulation is adopted between the inner rotor and the intermediate rotor, sum modulation is adopted between the intermediate rotor and the outer rotor, and the two sum modulation and sum modulation share one T-shaped dual-modulation magnetic modulation ring, so that the monotonic magnetic ring dual-modulation effect is realized. The size of the magnetic gear can be reduced, the torque transmission capacity of the magnetic gear is improved, the magnetic saturation phenomenon is restrained, the magnetic field modulation effect is enhanced, and the torque density of the magnetic gear is improved.

The invention relates to a magnetic field sensor based on a room-temperature two-dimensional magnetic semiconductor material and a preparation method and application thereof, and the preparation method comprises the steps: arranging two electrodes which are not communicated with each other on an insulating substrate, obtaining a layered iron gallium tellurium material, transferring the layered iron gallium tellurium material to the insulating substrate, enabling at least one layered iron gallium tellurium material to be separated from the insulating substrate, and enabling the layered iron gallium tellurium material to be separated from the insulating substrate. The first product covers the two electrodes at the same time, tetrabutylammonium cations or oxygen plasmas are used for carrying out an intercalation reaction on the layered iron gallium tellurium material of the first product, and the layered iron gallium tellurium material of the first product is converted into an intercalated layered iron gallium tellurium material; and performing vacuum annealing to obtain the magnetic field sensor. The sensor provided by the invention reflects the magnetic field intensity by using the polarized light current between the electrodes, and can realize wide-range and high-precision magnetic field detection.

Isolation breaks between logic cells in integrated circuit (IC) devices. A source-drain trench between adjacent channel regions includes a pair of source or drain semiconductor bodies, a first of the source or drain bodies in the source-drain trench is connected to a first of the channel regions, a second of the source or drain bodies in the source-drain trench is connected to a second of the channel regions, and a dielectric isolation is in the source-drain trench and between the pair of source or drain bodies. The dielectric isolation may include a void between layers or sidewalls of dielectric. The pair of source or drain bodies may include highly conductive, metallized layers in contact with the dielectric isolation.

An integrated circuit includes a nanosheet laterally-diffused metal oxide semiconductor (LDMOS) transistor. The transistor includes source and drain regions having a first conductivity type that extend into a semiconductor substrate. A nanosheet region including semiconducting nanosheets extends between the source region and the drain region. The nanosheets alternate with gate conductor layers that extend between the source region and the drain region. The nanosheets also alternate with field plate conductor layers that extend between the gate conductor layers and the drain region.

This invention discloses a method and system for suppressing capacitor voltage fluctuations in SiC MMC submodules, belonging to the field of electronic power technology. Based on the analysis results of the optimal broadband harmonic circulating current injection boundary and order for SiC MMC submodules, an optimized model for submodule capacitor voltage fluctuations is determined that simultaneously injects 2nd, 4th, and 8th harmonic circulating currents and 3rd harmonic voltages, which can fully utilize the higher control bandwidth characteristic of SiC MMC. By solving the optimized model for submodule capacitor voltage fluctuations, the amplitude and phase of the reference values ​​of the 2nd, 4th, and 8th harmonic circulating currents to be injected, as well as the amplitude and phase of the corresponding 3rd harmonic voltage, are determined. Then, by injecting 2nd, 4th, and 8th harmonic circulating currents and jointly injecting the 3rd harmonic voltage, broadband harmonic joint injection is achieved, reducing the capacitor voltage fluctuations of the submodule and realizing a method for suppressing capacitor voltage fluctuations in SiC MMC submodules with high suppression effect.

The invention relates to the technical field of microwave ferrite devices, and discloses a double-section microstrip circulator which comprises a magnetic conductive sheet, a ferrite gyromagnet and a resistor, the ferrite gyromagnet and the resistor are arranged on the upper surface of the magnetic conductive sheet, a circuit is additionally arranged on the upper surface of the ferrite gyromagnet, and the circuit is connected with a microstrip filter; the ceramic chip is arranged on the upper surface of the circuit, and samarium cobalt is additionally arranged at the top end of the ceramic chip, according to the two-section microstrip circulator, through the arrangement of a combined structure of the magnetic conductive sheet, the ferrite gyromagnet, the circuit, the microstrip filter, the ceramic chip, the samarium cobalt and the resistor, the isolation degree can be effectively improved, and the requirement of a system for high isolation is met; the microstrip filter in circuit connection can improve the second harmonic characteristic and improve the problem that the second harmonic of a conventional microstrip circulator is poor; the ferrite gyromagnet is used as a gyromagnet material, and is combined with a double-section circuit, so that the characteristic of low emission loss can be realized, and the circulator is small in size, light in weight and relatively high in reliability due to the integral structural design.

The utility model belongs to the technical field of electromagnet coils, particularly relates to a magnetic suspension electromagnet coil, and aims to solve the problems that a coil with a large number of turns can generate a strong magnetic field under the same current, so that the coil with a large number of turns can be adopted to generate a strong and stable magnetic field, but the large number of turns can cause some problems. In order to solve the problems that the energy loss is further increased and even the coil is possibly damaged due to the fact that the resistance of the coil is increased and heating is increased, the utility model provides the following scheme: the coil comprises a hollow framework, a plurality of turns of coils are wound on the hollow framework, and a protective sleeve is wound on the whole outer wall of the plurality of turns of coils; and the outer wall of a single copper wire of the multi-turn coil is covered and sprayed with an insulating layer. When the magnetic suspension electromagnet coil is used, through the design of the protective sleeve, the ceramic insulating coating, the heat dissipation fins, the heat extraction fan, the heat dissipation holes and the like which are made of polyimide film materials, the heat dissipation efficiency and durability of the coil are effectively improved, and stable operation of a magnetic suspension electromagnet is ensured.

A semiconductor IC structure may include a first stacked transistor and a second stacked transistor. A conductive contact is at least partially between the first stacked transistor and the second stacked transistor. The conductive contact includes a deep via and an airgap spacer exists around the deep via and is in contact with respective source / drain regions and gates of the first stacked transistor and the second stacked transistor. The airgap spacer may reduce respective parasitic capacitances that exist between the conductive contact and the first and second stacked transistors. For example, the airgap spacer may relatively reduce capacitance between the deep via and the respective source / drain regions and gates of the first stacked transistor and the second stacked transistor.