11647 results about "Condensed matter physics" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention relates to the technical field of magnetic ring detection, discloses a magnetic ring multi-dimensional nondestructive detection system and method based on multi-frequency composite electromagnetic excitation, and solves the defects of existing magnetic ring detection in the aspects of information acquisition, composite excitation and comprehensive diagnosis. The method comprises the following steps: applying multi-frequency composite excitation, and collecting and preprocessing multi-dimensional response; and extracting features, and carrying out deep learning fusion inversion to obtain magnetic characteristics, material components and defect information. The system comprises a composite excitation module, a multi-mode sensing module, a data acquisition preprocessing module, a data fusion inversion module and a control module. By adopting the technical scheme, comprehensive and efficient nondestructive detection of multi-dimensional electromagnetic information of the magnetic ring is realized, the existing limitation is overcome, and the detection precision and the comprehensive diagnosis capability are remarkably improved.

The invention relates to a solidified soil proportion and strength prediction method and system based on SEM image analysis, and belongs to the technical field of solidified soil strength testing. Comprising the following steps: S1, measuring physical indexes of disturbed soil; s2, multi-working-condition sample preparation and maintenance; s3, fractal dimension calculation of the SEM image is carried out; s4, unconfined compressive strength testing; s5, establishing a microstructure inversion model and a macroscopic strength prediction model; and S6, proportion optimization and strength prediction: utilizing the microstructure inversion model and the macroscopic strength prediction model to carry out solidified soil proportion optimization or strength prediction. According to the method, the quantitative relation between the microstructure (fractal dimension) and the macroscopic strength is established through SEM image analysis, the defects in the prior art are overcome, and a brand new technical path is provided for resource utilization of disturbed soil.

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The present invention relates to a magnetic resonance system and a gradient amplifier filter for a magnetic resonance system. The filter includes a plurality of non-magnetic core inductors and a printed circuit board having a multilayer structure, a plurality of filter capacitors being formed in a plurality of regions of the printed circuit board, respectively, wherein each non-magnetic core inductor is provided on the printed circuit board and spanning two of the plurality of filter capacitors.

The invention belongs to the technical field of superconducting wires, and relates to a niobium-tin composite superconducting wire and a preparation method thereof. The invention provides a Nb3Sn composite superconducting wire. The Nb3Sn composite superconducting wire sequentially comprises an Nb3Sn superconducting wire core, a barrier layer, a stable layer, a transition layer, a substrate layer and a functional layer from inside to outside, the transition layer is formed by mixing copper and a dielectric polymer, and the copper content is continuously decreased in a gradient manner from inside to outside; the substrate layer is the dielectric polymer; the functional layer is a plurality of protruding metal microstructures. According to the invention, the functional layer with the broadband electromagnetic stealth function is integrated on the basis of the Nb3Sn superconducting wire rod, so that the radar cross section is obviously reduced while the Nb3Sn superconducting wire rod bears high-density superconducting current and generates a strong magnetic field, and the technical problem that a high-field superconducting magnet system is easy to detect in an electromagnetic environment is solved.

A subsurface safety valve for a wellbore for production of fluids from a subsurface formation comprises a drive portion and an actuator portion. The drive portion comprises a first magnet assembly and the actuator portion comprises a second magnet assembly that is magnetically coupled to the first magnet assembly. At least one of the first magnet assembly or the second magnet assembly comprises a spatially rotated array of magnets arranged such that a magnetic field emitted from an operative side of the spatially rotated array of magnets facing a magnetic coupling is non-zero and such that the magnetic field emitted from a non-operative side of the spatially rotated array of magnets that is opposite the operative side is about zero.

A structure of a rotor changeable of a magnetic force is provided, which includes a rotor core and a plurality of magnetic pole parts disposed therein. Each magnetic pole part includes a radially-magnetized fixed magnetic-force magnet and a circumferentially-magnetized variable magnetic-force magnet. A cavity part is disposed between the fixed magnetic-force magnet and the variable magnetic-force magnet. The cavity part has a cross-section extending from an end part of the fixed magnetic-force magnet toward an opposing surface. The cavity part is formed so that a distance between the variable magnetic-force magnet and the cavity part in the circumferential direction becomes larger as the cavity part approaches the opposing surface, and a width of the cavity part in the circumferential direction becomes smaller as the cavity part separates from the fixed magnetic-force magnet in the radial direction.

This invention discloses a method and system for suppressing capacitor voltage fluctuations in SiC MMC submodules, belonging to the field of electronic power technology. Based on the analysis results of the optimal broadband harmonic circulating current injection boundary and order for SiC MMC submodules, an optimized model for submodule capacitor voltage fluctuations is determined that simultaneously injects 2nd, 4th, and 8th harmonic circulating currents and 3rd harmonic voltages, which can fully utilize the higher control bandwidth characteristic of SiC MMC. By solving the optimized model for submodule capacitor voltage fluctuations, the amplitude and phase of the reference values ​​of the 2nd, 4th, and 8th harmonic circulating currents to be injected, as well as the amplitude and phase of the corresponding 3rd harmonic voltage, are determined. Then, by injecting 2nd, 4th, and 8th harmonic circulating currents and jointly injecting the 3rd harmonic voltage, broadband harmonic joint injection is achieved, reducing the capacitor voltage fluctuations of the submodule and realizing a method for suppressing capacitor voltage fluctuations in SiC MMC submodules with high suppression effect.

The utility model belongs to the technical field of electromagnet coils, particularly relates to a magnetic suspension electromagnet coil, and aims to solve the problems that a coil with a large number of turns can generate a strong magnetic field under the same current, so that the coil with a large number of turns can be adopted to generate a strong and stable magnetic field, but the large number of turns can cause some problems. In order to solve the problems that the energy loss is further increased and even the coil is possibly damaged due to the fact that the resistance of the coil is increased and heating is increased, the utility model provides the following scheme: the coil comprises a hollow framework, a plurality of turns of coils are wound on the hollow framework, and a protective sleeve is wound on the whole outer wall of the plurality of turns of coils; and the outer wall of a single copper wire of the multi-turn coil is covered and sprayed with an insulating layer. When the magnetic suspension electromagnet coil is used, through the design of the protective sleeve, the ceramic insulating coating, the heat dissipation fins, the heat extraction fan, the heat dissipation holes and the like which are made of polyimide film materials, the heat dissipation efficiency and durability of the coil are effectively improved, and stable operation of a magnetic suspension electromagnet is ensured.

A semiconductor IC structure may include a first stacked transistor and a second stacked transistor. A conductive contact is at least partially between the first stacked transistor and the second stacked transistor. The conductive contact includes a deep via and an airgap spacer exists around the deep via and is in contact with respective source / drain regions and gates of the first stacked transistor and the second stacked transistor. The airgap spacer may reduce respective parasitic capacitances that exist between the conductive contact and the first and second stacked transistors. For example, the airgap spacer may relatively reduce capacitance between the deep via and the respective source / drain regions and gates of the first stacked transistor and the second stacked transistor.

The invention relates to the technical field of magnetic suspension bearings, and provides a magnetic leakage prevention bearing structure which comprises a flux sleeve, a shell, a magnetic part, an inner-layer magnet yoke and an outer-layer magnet yoke. The shell is sleeved outside the flux sleeve, and an inner ring of the shell is provided with a mounting space; the magnetic part is arranged in the mounting space; the inner-layer magnet yoke is arranged in the mounting space and connected with the shell, the inner-layer magnet yoke is concaved inwards to form a first containing groove, and the magnetic part is contained in the first containing groove; the outer-layer magnet yoke is arranged in the installation space and connected with the shell, the outer-layer magnet yoke is concaved inwards to form a second containing groove, and the inner-layer magnet yoke is contained in the second containing groove. A closed magnetic circuit is formed through a double-layer magnet yoke nested structure, the axial magnetic shielding layer design is matched, magnetic flux leakage is effectively restrained, the magnetic field energy utilization rate is increased, electromagnetic interference to external equipment is reduced, and meanwhile the bearing performance and operation stability of the bearing are remarkably improved by optimizing magnet yoke thickness distribution and the permanent magnet arrangement mode.

Integrated circuit (IC) devices having nonplanar transistor structures of complementary conductivity type.An IC device may include first and second transistors with a stack of nanoribbons in a channel region of the first transistor and one or more fins in a channel region of the second transistor, and the one or more fins may be on a trench isolation over the substrate. The nanoribbons may have upper and lower (100) surfaces, and sidewalls of the one or more fins may be (110) surfaces. The fins on the isolation structure may be between stacks of nanoribbons, the nanoribbons may be over subfins of the substrate, and the isolation structure may be between the subfins.The fins may be epitaxially grown as vertical nanoribbons from (and with a same crystal lattice and alignment as) a sidewall of the stack of nanoribbons in the first transistor.

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau. The SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.

The invention relates to a preparation method of a silicon single crystal rod and a silicon wafer. Comprising a melting stage, a temperature adjusting stage, a welding stage, a seeding stage, a shouldering stage, an equal-diameter stage, an ending stage and a breaking stage which are carried out in sequence, in the equal-diameter stage, the pulling speed is controlled to be within a first pulling speed range, and the solid-liquid interface temperature gradient is controlled to be within a first gradient range; wherein the range of the first pulling speed ranges from 0.5 mm / min to 1.1 mm / min; the first gradient range is 3 DEG C / cm to 5 DEG C / cm. By reducing the temperature gradient of a solid-liquid interface and lowering the crystal pulling rate, the stability of a thermal field is enhanced, and sufficient conditions are provided for the composite reaction of Sii and V, so that the impurity capturing efficiency is improved, the internal purity of the crystal is improved, and the impurities are effectively removed.

The invention relates to the technical field of semiconductor power devices, discloses a semiconductor power device and a preparation method thereof, and aims to improve the voltage resistance and reliability of the device. The terminal structure comprises a substrate; the epitaxial layer is positioned above the substrate; the heavily doped region is located in the epitaxial layer; the junction termination extension region is positioned in the epitaxial layer and is in contact with the heavily doped region; the oxide layer is positioned above the heavily doped region and the junction termination extension region and covers part of the heavily doped region and the junction termination extension region; and the field plate structure is positioned above the heavily doped region and the junction termination extension region, covers part of the heavily doped region and part of the junction termination extension region, and is positioned in the oxide layer. According to the technical scheme, electric field distribution can be effectively optimized, and breakdown voltage and terminal reliability are improved.

A semiconductor device includes a semiconductor substrate of a first conductivity type, a RESURF layer of a second conductivity type, a buried layer of the second conductivity type formed in the bottom portion of a high-side circuit, and a MOSFET having the RESURF layer serving as a drift layer, in which the MOSFET includes a first semiconductor layer of the second conductivity type serving as a drain layer, an end portion of the first semiconductor layer is located on a low-side circuit side more than an end portion of the buried layer is, and a curvature center of a curved portion of the first semiconductor layer is located closer to a high-side circuit than a curved portion of the buried layer is, and the curvature of the curved portion of the first semiconductor layer is smaller than that of the curved portion of the buried layer.

The invention discloses an AMR magnetic resistance unit, an AMR magnetic resistance module, an angle sensor and a chip wherein the AMR magnetic resistance unit comprises: a first AMR magnetic resistance unit; the first AMR magnetic resistance unit comprises a plurality of first AMR magnetic resistance strips, the plurality of first AMR magnetic resistance strips surround a circle center and are distributed in the radial direction, and each first AMR magnetic resistance strip is of a 60-degree arc-shaped strip-shaped structure. According to the AMR magnetic resistance unit, the AMR magnetic resistance module, the angle sensor and the chip, harmonic waves, especially sixth harmonic waves, can be better eliminated, magnetic domain collective hysteresis and noise are reduced, and the anti-eccentricity capacity is improved.

An integrated circuit includes a first nanostructure transistor and a second nanostructure transistor. The first and second nanostructure each include gate electrodes. A backside trench separates the first gate electrode from the second gate electrode. A bulk dielectric material fills the backside trench. A gate cap metal electrically connects the first gate electrode to the second gate electrode.

The disclosure relates to devices and methods for applying a magnetic field on a body of a patient. The time-varying magnetic field may applied to a brain of the patient. The disclosure provides a method of finding the position suitable for application of the magnetic field to the brain. The devices and methods of the disclosure may be suitable for reducing of food craving.

Embodiments of the present disclosure provide a method for forming backside gate contacts and semiconductor fabricated thereof. A semiconductor device includes both signal outputs, such as source / drain contacts, and signal inputs, such as gate contacts, formed on a backside of the substrate. The backside gate contacts and backside source / drain contacts are formed in a self-aligned manner.

The invention relates to the technical field of microcosmic acoustic nonlinear effect simulation, and particularly discloses a method for analyzing the influence of pearlite spheroidization on ultrasonic harmonics based on molecular dynamics, which comprises the following steps: firstly, constructing a pearlite undamaged model meeting a Bagaryatskii orientation relationship and a plurality of spheroidization damage models representing different spheroidization damage degrees; carrying out molecular dynamics simulation on the eight constructed models, and carrying out energy minimization and relaxation treatment to obtain a spheroidized model with a stable structure; applying ultrasonic excitation signals V1 and V2 with opposite phases to each spheroidizing damage model to obtain displacement signals after ultrasonic propagation in different areas; and finally, processing the displacement signal by adopting a phase inversion method, extracting second harmonics, analyzing the change rule of the amplitude of the second harmonics, and establishing an incidence relation between the pearlite spheroidizing damage and the ultrasonic nonlinear effect. Through molecular dynamics simulation and a phase reversal method, the influence of pearlite spheroidization on ultrasonic harmonic waves is disclosed, and accurate theoretical support and method reference are provided for nondestructive testing of the pearlite spheroidization.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing the thickness difference between an N-type region and a P-type region and preparation and application of the back contact cell capable of reducing the thickness difference between the N-type region and the P-type region. Wherein the surface of one side, far away from the crystalline silicon substrate, of the amorphous silicon layer is provided with an N-type region and a P-type region which are alternately formed, the N-type region comprises an N-type doped base layer and an N-type transition layer, and the P-type region comprises a P-type doped base layer and a P-type transition layer; wherein the content ratio of phosphorus to silicon in the N-type doped base layer is smaller than 1, the content ratio of phosphorus to silicon in the N-type transition layer is larger than 1, the content ratio of boron to silicon in the P-type doped base layer is smaller than 1, and the content ratio of boron to silicon in the P-type transition layer is larger than 1. The vertical contact resistance can be obviously reduced while the thickness difference between the N-type region and the P-type region is reduced, the high cell conversion efficiency is obtained, the stability of the cell is improved, and the service life of the cell is prolonged; meanwhile, the risk of film explosion in the subsequent process is reduced, and the edge compounding problem is relieved.

The invention discloses a novel induction-type magneto-thermo-acoustic detection method for the conductivity of a supercapacitor, and relates to the technical field of nondestructive material detection.The method comprises the steps that a steady-state static magnetic field and a pulse alternating magnetic field are introduced to form a composite excitation field, and a magneto-acoustic effect and a thermo-acoustic effect are simultaneously and cooperatively excited in a solid-state electrode material; the magnetoacoustic-thermoacoustic coupling effect is formed, eddy current induced by a pulse alternating magnetic field in the material not only generates joule heat, but also generates a direct carrier of Lorentz force under the action of a steady-state static magnetic field, the two physical effects are derived from the same electromagnetic excitation process, but the mechanisms for generating acoustic signals are complementary to each other, so that the effect of the magnetoacoustic-thermoacoustic coupling is achieved. The two effects are coupled as a unified sound source item, a sound pressure wave equation is established, the equation describes a sound field excitation process under the combined action of a force source and a heat source, the coupling mechanism remarkably enhances the strength and information abundance of ultrasonic signals, and the inherent defect that a single thermoacoustic detection method is insensitive to a high-conductivity material is overcome.

The utility model discloses an electromagnetic induction heating module, heating equipment and a slab production line, and relates to the technical field of induction heating. The heating module comprises a shell, a coil, and a first magnetic conductive assembly, a second magnetic conductive assembly and a third magnetic conductive assembly which are sequentially arranged along the length direction of the coil, the first magnetic conductive assembly and the third magnetic conductive assembly respectively correspond to two side parts of a to-be-heated object, and the second magnetic conductive assembly corresponds to the middle part of the to-be-heated object; the first magnetic conductive assembly and the third magnetic conductive assembly each comprise a first magnetizer which is matched with the coil and can move up and down, and the second magnetic conductive assembly comprises a second magnetizer which is matched with the coil and is fixed. By adjusting the gap between the first magnetizer and the to-be-heated object, the heating temperature of the area corresponding to the to-be-heated object is adjusted, and the temperature uniformity of the to-be-heated object in the width direction is achieved.

Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises semiconductor layers over a substrate, wherein the semiconductor layers are stacked up and separated from each other, each semiconductor layer includes a first portion in a first channel region of the substrate and a second portion in a second channel region of the substrate, epitaxial layers formed in a source / drain region between the first channel region and the second channel region, wherein the epitaxial layers are separated from each other and each epitaxial layer is formed between the first portion and the second portion of each semiconductor layer, and a conductive feature wrapping each of the epitaxial layers.

The invention discloses a semiconductor device which comprises a cellular structure, and the cellular structure comprises an N + substrate, an N-drift layer and a functional area. The N-drift layer is located on the N + substrate; the functional region is embedded into one side, away from the N + substrate, of the N-drift layer, the functional region comprises two subunits and a second N + source region, and each subunit comprises a P + contact region, a P-type body region, a first N + source region and a first trench gate structure; the first N + source region is located on the P-type body region, the first groove is located between the P-type body region and the P + contact region, the first gate oxide layer covers the inner wall of the first groove, a first filling groove is formed in the inner wall of the first gate oxide layer, the first gate is filled in the first filling groove, and the P + shielding region of the P + contact region covers the bottom of the first gate oxide layer; and a second N + source region is arranged between the first trench gate structures of the two subunits. According to the device, the effective utilization rate of a channel can be improved, the specific on-resistance is further reduced, and the problem of long reverse recovery time is solved.

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

The invention discloses a variable magnetic flux memory motor, which comprises a stator, armature windings and a rotor, and is characterized in that the armature windings comprise a first winding and a second winding which are different and switchable in mode; the rotor comprises a plurality of poles distributed in the circumferential direction, each pole comprises a first layer of permanent magnets and a second layer of permanent magnets, the first layer of permanent magnets are high-coercive-force permanent magnets, the second layer of permanent magnets comprise at least two second permanent magnets, all the second permanent magnets are high-coercive-force permanent magnets or all the second permanent magnets are low-coercive-force permanent magnets, and the first layer of permanent magnets and the second layer of permanent magnets are arranged in the circumferential direction. And the characteristics of the magnetic materials of the second layer of permanent magnets of two adjacent poles are opposite, a fundamental wave main magnetic field is formed through the first winding in a magnetism increasing state so as to improve the permanent magnet torque, and the second winding is switched to excite a harmonic magnetic field in a magnetism weakening state so as to maintain torque output. According to the invention, through the collaborative design of the heteropole asymmetric permanent magnet layout and the dual-mode winding, the problems that the magnetic adjustment range of the existing variable flux memory motor is limited and the torque is suddenly reduced in a weak magnetic state are solved, and the efficient operation interval is obviously widened.

The dielectric filter with the built-in negative coupling structure comprises a dielectric block, a conductive layer and the negative coupling structure, at least two resonance holes are formed in the dielectric block, the conductive layer is laid on the surface of the dielectric block and the inner walls of the resonance holes, and the negative coupling structure is arranged between two adjacent resonators divided by the two resonance holes. The negative coupling structure comprises the two conducting strips which are arranged in parallel at an interval and the metalized via hole for connecting the two conducting strips, and the conducting strips and the metalized via hole are embedded in the dielectric block and are not connected with the resonance hole and the conducting layer, so that coupling can be realized in the dielectric block, exposure is not needed, and the strength is not reduced; according to the manufacturing method of the dielectric filter, the defects of deformation, local collapse and the like generated during firing can be avoided, the size of the dielectric filter can be greatly reduced, the requirement for miniaturization is met, the conducting strips and the metalized via holes are arranged in a prefabrication machining mode, the machining precision is high, the zero point position control is accurate, implementation is easy, and the yield is high.