24774 results about "Condensed matter physics" patented technology

Disclosed are methods of microelectronic processing to reveal conductive vias that are at least partially embedded in a bulk semiconductor, and resulting structures. A method of forming a microelectronic structure includes revealing the plurality of conductive vias from a back surface of the bulk semiconductor and forming a protective cap on each of the conductive vias on the back surface of the bulk semiconductor. The protective caps can be patterned or disposed selectively onto the conductive vias. The protective caps can cover the conductive vias or also cover a portion of the bulk semiconductor surrounding the conductive vias. The back surface of the bulk semiconductor is etched to form protruding conductive vias, which can be surrounded by sleeves of the bulk semiconductor. A dielectric layer is deposited over the back surface and planarized to reveal the plurality of conductive vias from the back surface.

Methods of hyperthermic treatment, including heating a tissue to a temperature range of 40° C. to 45° C., and exposing the heated tissue to a magnetic field having a field strength that is capable of extending the lifetime of a free radical entity within the heated tissue. The prolonged lifetime of the free radical entity in the heated tissue enhances the therapeutic effects of the treatment, leading to improved outcomes in various medical applications.

The present invention provides, in part, methods of treatment for substance use disorder comprising applying repetitive transcranial magnetic stimulation (rTMS) therapy to a patient in need thereof. The present invention also provides devices that generate a low intensity pulsed magnetic field and variable frequencies.

The invention relates to the technical field of MOS semiconductors, and discloses a silicon carbide plane MOS device polysilicon gate self-alignment process and a low resistance structure, the silicon carbide plane MOS device polysilicon gate self-alignment process comprises a plurality of parallel MOS cells, each MOS cell comprises a drain electrode, a semiconductor epitaxial layer, a source electrode and a grid electrode, the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, an N well layer, a P + layer and a P well layer, and the N drift layer comprises a drain electrode, a source electrode and a grid electrode. The height of the P well layer in the single MOS cell is aligned with that of the grid electrode, and the P well layer is located on the left side and the right side of the grid electrode; the N well layer and the P + layer are both located above the grid electrode and the P well layer, and the P + layer is located on the outer side of the N well layer. According to the invention, the height of the P well layer is accurately aligned with the grid electrode, the P well layer is arranged at the two sides of the grid electrode, the design of the T-shaped source electrode is combined, the conduction path is optimized, and when the voltage is applied to the grid electrode, vertical channels are formed at the two sides of the P well layer, so that the path of current flowing from the drain electrode to the source electrode through the N drift layer is shorter and the distribution is uniform.

The invention discloses a silicon carbide TrenchMOS device and a manufacturing method thereof, and belongs to the field of semiconductors. Comprising a drain electrode, a semiconductor epitaxial layer, a source electrode and a grid electrode; the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a P + layer, an N well layer and a P well layer, and a lightly doped N layer is arranged in the middle of the N drift layer of each MOS cell; the arc-shaped lightly-doped N layer is additionally arranged in the middle of the arc-shaped heavily-doped N layer, electric field distribution under reverse bias is smoothed through the doping concentration lower than that of the heavily-doped N layer, the interface electric field sudden change risk is reduced, dynamic loss is reduced, meanwhile, the doping concentration of the central area is diluted through the arc-shaped inner side lightly-doped N layer, a depletion area is promoted to be expanded, and the performance of the device is improved. Electric field distribution between drain gates is optimized, and stray capacitance is reduced to improve high-frequency performance.

The present disclosure relates to a semiconductor device and a method of manufacturing a semiconductor device and particularly to MOSFET transistors. A semiconductor device including a first-conductivity-type substrate, a first-conductivity-type epitaxy layer including a JFET region, two first well regions including two source regions, two second well regions, a scatter oxide layer, the first-conductivity-type substrate is adjacent to the first-conductivity-type epitaxy layer, the two first well regions are adjacent to the first-conductivity-type epitaxy layer and each of the two first well regions is adjacent to one second well region, the JFET region is adjacent to the two second well regions, the scatter oxide layer is adjacent to the two source regions, the two first well regions, the two second well region and the JFET region, and a width of the JFET region is greater near the scatter oxide layer than in part closest to the first-conductivity-type substrate.

The invention discloses a method for improving deformation uniformity of a core wire of an NbTi superconducting wire, and belongs to the technical field of superconducting wire processing. The method comprises the following steps: performing deep hole drilling on an oxygen-free copper ingot rod, then assembling, welding and extruding the oxygen-free copper ingot rod and a single-core rod to obtain a composite rod, and performing multi-pass drawing on the composite rod to obtain the NbTi superconducting wire with high performance, low loss and high N value. The Jc of the prepared NbTi superconducting wire is 2880-3120 A / mm < 2 >, the loss is 450-550 mJ / cm < 3 >, the N value is 70-95, compared with a superconducting wire prepared through a conventional process, the N value is remarkably increased, the loss is remarkably reduced, the critical current density is increased, and the NbTi superconducting wire has wide application prospects in MRI magnets.

The invention discloses a two-dimensional magnetic material device and a preparation method and a regulation and control method thereof, and the regulation and control method comprises the steps: enabling ionic liquid to cover the surface of a two-dimensional magnetic material, enabling the ionic liquid to be in contact with a grid electrode, a source electrode, a drain electrode and the two-dimensional magnetic material, and continuously applying current from the grid electrode to the source electrode and to the drain electrode, and the regulation and control of the two-dimensional magnetic material device are completed. According to the two-dimensional magnetic material device and the preparation method and the regulation and control method thereof provided by the invention, the ionic liquid containing the cationic molecular chains with different lengths is selected to perform intercalation on the two-dimensional magnetic material device, so that regulation and control on the two-dimensional magnetic material device are realized, and the regulation and control flexibility of the two-dimensional magnetic material is greatly improved; and the coercive field, the magnetic anisotropy energy and the carrier concentration of the two-dimensional magnetic material can be changed.

Transistor devices are provided. A transistor device includes a substrate. The transistor device includes a lower transistor having a lower gate and a lower channel region on the substrate. The transistor device includes an upper transistor having an upper gate and an upper channel region. The lower transistor is between the upper transistor and the substrate. The transistor device includes an isolation region that separates the lower channel region of the lower transistor from the upper channel region of the upper transistor. Moreover, the lower gate of the lower transistor contacts the upper gate of the upper transistor. Related methods of forming a transistor device are also provided.

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention discloses a magnetic field measurement method and system based on a multi-sensor fusion technology, and relates to the technical field of sensor fusion and magnetic field measurement, and the method comprises the steps: deploying a multi-sensor data array, carrying out the adaptive initialization of a bistable SR parameter range, defining an SR system differential equation, and carrying out the iterative optimization through employing an MPA population. Carrying out Hilbert transform edge detection on enhanced signal component data, calculating an array inclination angle, carrying out abbe error and bidirectional projection error compensation, and carrying out metasurface grid coordinate quantization mapping; the collected and cross-scale magnetic field data set is preprocessed and packaged into data cells, quality evaluation and weight distribution are carried out on the data cells, and extended Kalman filtering data fusion is carried out; by introducing a bistable stochastic resonance system and an MPA population optimization algorithm, a weak magnetic field signal is obviously enhanced, and by calculating an array inclination angle and compensating an Abbe error and a bidirectional projection error, the space consistency of a measurement result is improved.

A semiconductor structure includes one or more channel layers; a gate structure engaging the one or more channel layers; a first source / drain feature connected to a first side of the one or more channel layers and adjacent to the gate structure; a first dielectric cap disposed over the first source / drain feature, wherein a bottom surface of the first dielectric cap is below a top surface of the gate structure; a first via disposed under and electrically connected to the first source / drain feature; and a power rail disposed under and electrically connected to the first via.

The invention discloses a flexible magnetic tactile sensing device based on a microstructure elastic layer, a three-dimensional force measuring device and a measuring method.The flexible magnetic tactile sensing device comprises a flexible magnetic film, the microstructure elastic layer, a Hall sensor, a PCB and a bottom shell, the Hall sensor is installed on the PCB, and the flexible magnetic film, the microstructure elastic layer, the PCB and the bottom shell are sequentially stacked from top to bottom; the microstructure elastic layer is of a non-planar structure, when the flexible magnetic film deforms due to stress, deformation of the flexible magnetic film is transmitted to the microstructure elastic layer, the change of the three-axis magnetic field intensity is measured through the Hall sensor and uploaded to a PC terminal for data processing, and three-dimensional force measurement is achieved. Three-dimensional force measurement can be achieved, the flexible magnetic film can generate local deformation in the normal direction when normal force is applied, the flexible magnetic film can generate tangential displacement when tangential force is applied, and application scenes suitable for different microstructure elastic layers are provided according to quantitative analysis results.

The invention relates to the technical field of magnetic ring detection, discloses a magnetic ring multi-dimensional nondestructive detection system and method based on multi-frequency composite electromagnetic excitation, and solves the defects of existing magnetic ring detection in the aspects of information acquisition, composite excitation and comprehensive diagnosis. The method comprises the following steps: applying multi-frequency composite excitation, and collecting and preprocessing multi-dimensional response; and extracting features, and carrying out deep learning fusion inversion to obtain magnetic characteristics, material components and defect information. The system comprises a composite excitation module, a multi-mode sensing module, a data acquisition preprocessing module, a data fusion inversion module and a control module. By adopting the technical scheme, comprehensive and efficient nondestructive detection of multi-dimensional electromagnetic information of the magnetic ring is realized, the existing limitation is overcome, and the detection precision and the comprehensive diagnosis capability are remarkably improved.

The invention relates to the technical field of sensors, in particular to a transformer dynamic magnetic bias current detection method and device based on magnetoelectric coupling sensing, and the detection device composed of a magnetoelectric coupling sensing element, an exciting coil and a rear-end processing circuit is used for measuring direct current magnetic bias current. The working principle of the magnetoelectric coupling sensing element is based on stress coupling between the magnetostrictive material and the piezoelectric material, then an output signal is generated on the piezoelectric material, and the sensitivity is remarkably improved by using the resonance amplification effect of the magnetoelectric coupling sensing element. Non-contact current detection can be realized by detecting the magnetic field generated by the magnetic bias current of the neutral point grounding wire of the transformer, and direct physical contact with power equipment is not needed, so that the safety of the system is improved, and the problem of high installation difficulty of a contact sensor is avoided; high-sensitivity, high-precision, anti-interference and real-time transformer direct-current magnetic bias current monitoring is achieved, and the transformer direct-current magnetic bias current monitoring device has the advantages of being easy to install and deploy and small in size.

The invention provides a magnetic suspension motor control method and device and a magnetic suspension motor, and relates to the technical field of magnetic suspension motor control, and the technical scheme is characterized in that the method comprises the steps: detecting the voltage change rate of a power grid, and judging a voltage fluctuation mode based on a preset threshold value; environment RFID tag information is read through a scene code analysis unit, and a current scene code is obtained; retrieving a maximum compensation current value, a current change rate threshold value and a PID integral time constant from a preset parameter matrix based on the voltage fluctuation mode and the scene code; and limiting the current change rate of the motor winding according to the current change rate threshold, and executing motor control through the maximum compensation current value and the PID integral time constant. The magnetic suspension motor control method and device and the magnetic suspension motor provided by the invention have the advantages of improving the operation stability of the motor in voltage fluctuation and multi-noise scenes, suppressing electromagnetic noise and adapting to different scenes.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses a semiconductor device with an integrated heat dissipation function for a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The single MOS cell comprises a drain electrode, a semiconductor epitaxial layer, a source electrode and a grid electrode, the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a P + layer, an N well layer and a P well layer, the profile of the cross section of the grid electrode is in an H shape, and the grid electrode comprises two longitudinal parts and a transverse part used for bridging the two longitudinal parts. According to the invention, the H-shaped gate structure is in bridge connection with the double longitudinal grooves through the transverse part, so that the channel width is increased, and the on-resistance is reduced; a current path is further optimized by combining a metal deposition layer and a heavily doped N + layer in the bottom doping layer; and the metal layer is connected in parallel to conduct electricity, so that the resistance is reduced, and the heavily doped N + layer inhibits the JFET effect, so that the resistance is reduced by more than 10%.

The invention discloses a method and a device for controlling magnetizing uniformity of a permanent magnet rotor, relates to the technical field of permanent magnet rotors, and aims to evaluate the risk of uniformity during magnetizing of the permanent magnet rotor in advance and provide effective early warning for magnetizing operation by analyzing temperature change data, shape data and surface defect data and constructing a magnetic field response capability coefficient. Based on monitoring of the internal magnetic domain data and the magnetic data of the permanent magnet rotor in the step S3, the magnetic field stability of the rotor can be dynamically analyzed in combination with the influence of an external magnetic field generated by a magnetizing source on magnetic domain alignment. The comprehensive magnetic performance stability index is generated by comprehensively considering the magnetic field response capability coefficient and the magnetizing state prediction model, and a scientific basis is provided for control and optimization in the subsequent magnetizing process. Intelligent control and optimization are carried out, grade scoring is carried out by setting a risk threshold value R and combining the comprehensive magnetic performance stability index, the magnetizing operation effect can be accurately evaluated, and corresponding control measures are taken under different grades.

The invention discloses a PINN prediction method for electromagnetic field distribution and mechanical response under an electromagnetic load of a superconducting block. The method comprises the following steps of: 1, establishing a PINN model for predicting the electromagnetic field of the bulk superconductor under the excitation of an external magnetic field by taking a coordinate point and a time point as input and magnetic field intensity and electric field intensity as output; 2, training the PINN model for predicting the electromagnetic field of the superconducting block under the excitation of the external magnetic field, achieving the distribution prediction of the electromagnetic field, and obtaining the prediction of the electromagnetic force; 3, establishing a PINN model for predicting the mechanical response of the bulk superconductor under the action of the electromagnetic force, wherein the coordinate point is used as input, and the displacement field is used as output; and step 4, training the PINN model for the mechanical response prediction of the bulk superconductor under the action of the electromagnetic force, and finally realizing the electromagnetic field distribution and mechanical response prediction of the bulk superconductor. The method can predict the electromagnetic field distribution of the superconducting block and the mechanical response under the electromagnetic force, and does not need grid division and a large amount of experimental data.

The invention discloses a symmetrical structure S-band filter based on GaAs IPD, which belongs to the technical field of microwaves and comprises a first-order series resonance circuit, a coupling capacitor C1, a grounding inductor L2, a coupling capacitor C2, a second-order parallel resonance, a third-order parallel resonance, a grounding capacitor C6, a coupling capacitor C7, a fourth-order parallel resonance, a grounding capacitor C66, a fifth-order parallel resonance, a coupling capacitor C22 and a grounding inductor L22. And a coupling capacitor C11 and a sixth-order series resonance. The third-order parallel resonance and the fourth-order parallel resonance can improve the low-frequency out-of-band suppression degree of the band-pass filter; the first-order series resonance and the sixth-order series resonance as well as the second-order parallel resonance and the fifth-order parallel resonance can improve the high-frequency out-of-band suppression degree of the band-pass filter.

The invention discloses a ternary magnetic selenide and a preparation method of a single crystal of the ternary magnetic selenide, and relates to the technical field of crystal material preparation. The chemical formula of the ternary magnetic selenide is VCrSe3, and the ternary magnetic selenide can be prepared by taking a vanadium source, a chromium source and a selenium source in a specific proportion as raw materials and an iodine source as a transport agent through a chemical vapor transport method. The crystal structure of the VCrSe3 single crystal is a monoclinic phase (I2 / m), and phase transformation from antiferromagnetic to ferromagnetic and spin reorientation occur at low temperature, so that the VCrSe3 single crystal has application potential in the fields of spintronics, optoelectronics and the like; the large-size and high-quality VCrSe3 single crystal prepared by the method can provide a material for intrinsic physical property research and development of functional devices such as optoelectronic devices and spinning electrons.

Magnetic coupling devices are disclosed having magnetic field sensors. The magnetic coupling device may include degaussing coils wrapped about pole extension shoes of the magnetic coupling device.

The invention discloses a cellular structure of a shield gate trench MOSFET and a manufacturing method thereof, the cellular structure of the shield gate trench MOSFET comprises a substrate, a drift region and an interlayer dielectric layer, the drift region is provided with a deep trench, and the deep trench is internally provided with a shield gate, an intermediate oxide layer and a control gate; a body region and a source region are formed at the upper part of the drift region through injection, the interlayer dielectric is provided with a source electrode contact hole which penetrates through the source region and extends into the body region, and highly doped contact regions are formed on the side wall and the bottom of the source electrode contact hole through injection; and a charge balance region is formed below the source electrode contact hole through high-energy ion implantation. According to the invention, by arranging the charge balance region, the lateral depletion of the shield gate to the adjacent drift region can be enhanced when the shield gate trench MOSFET device is in a reverse bias state, the specific on-resistance of the device is reduced, the depletion of the drift region of the epitaxial layer is accelerated, and the reliability and radiation resistance of the device are improved.

Provided is a semiconductor device which includes: a transistor structure; a plurality of 1st metal lines above the transistor structure; and a plurality of 1st vias formed on selected 1st metal lines, respectively, among the plurality of 1st metal lines; a 2nd via formed on a 1st via among the plurality of 1st vias; and a 2nd metal line on the 2nd via, wherein the 1st metal lines are arranged in a 1st direction and extended in a 2nd direction which intersects the 1st direction, and the 2nd metal line is extended in the 1st direction, and wherein the plurality of 1st vias comprise at least one dummy via which is not connected to any metal line thereabove other than an underlying 1st metal line among the selected 1st metal lines.

The invention relates to a solidified soil proportion and strength prediction method and system based on SEM image analysis, and belongs to the technical field of solidified soil strength testing. Comprising the following steps: S1, measuring physical indexes of disturbed soil; s2, multi-working-condition sample preparation and maintenance; s3, fractal dimension calculation of the SEM image is carried out; s4, unconfined compressive strength testing; s5, establishing a microstructure inversion model and a macroscopic strength prediction model; and S6, proportion optimization and strength prediction: utilizing the microstructure inversion model and the macroscopic strength prediction model to carry out solidified soil proportion optimization or strength prediction. According to the method, the quantitative relation between the microstructure (fractal dimension) and the macroscopic strength is established through SEM image analysis, the defects in the prior art are overcome, and a brand new technical path is provided for resource utilization of disturbed soil.

The invention discloses a high-voltage SiC MOSFET cellular structure. The high-voltage SiC MOSFET cellular structure comprises an N + type silicon carbide power substrate, an N type drift region and a current expansion layer which are stacked in sequence, the electric field modulation regions are arranged on the left side and the right side of the current expansion layer, the P-body region is arranged above the current expansion layer, and the N + type source region and the P + type source region are arranged above the P-body region; the gate trench is arranged in the middle of the current expansion layer, a P + type shielding region is arranged at the bottom of the gate trench, a gate is arranged in the gate trench, and the gate is located above the P + type shielding region; and the gate oxide layer covers the upper surfaces of the gate, the N + type source region and the P + type source region. According to the structure, the electric field modulation areas are arranged on the two sides of the current expansion layer, the peak electric field intensity of the bottom of the groove of the UMOSFET device is reduced, the reverse breakdown voltage of the device is greatly improved, and meanwhile, the N-type areas in the electric field modulation areas also effectively reduce the characteristic on-resistance when the power device is conducted.

The invention belongs to the field of magnetic resonance measurement signal noise filtering, and particularly relates to a ground magnetic resonance signal sparse denoising method of a combined dictionary, which comprises the following steps: reconstructing a power frequency harmonic component of a magnetic resonance signal according to frequency bands, and eliminating power frequency harmonics from the magnetic resonance signal to obtain a power frequency-removed signal; constructing a track matrix Z by adopting a Gaussian random matrix, constructing a track matrix Y by adopting a power frequency-removed signal, taking first K columns of the track matrix Z and normalizing to obtain an initial dictionary D, and using the track matrix Y as an original sample for constructing a sparse coefficient matrix X; updating the initial dictionary D and the sparse coefficient matrix X through K-SVD dictionary learning, and reconstructing a track matrix by adopting the updated dictionary # imgabs0 # and the sparse coefficient matrix # imgabs1 # to obtain a track matrix W; and obtaining a pure magnetic resonance signal by taking the first row of the track matrix W, and realizing effective removal of MRS signal noise in a complex electromagnetic interference scene under the condition of single signal acquisition.

A method of attaching a magnetic element to a needle assembly. The needle assembly can include a cannula extending along a longitudinal axis. The method can include placing the magnetic element in a magnetic field such that a magnetic axis of the magnetic element substantially aligns with the magnetic field. The method can further include securing the magnetic element to a portion of the needle assembly while the magnetic element is substantially aligned with the magnetic field such that the magnetic axis of the magnetic element is secured in a desired predetermined orientation.

When x-ray fluorescence (“XRF”) spectroscopy is utilized to classify materials transported on a moving conveyor belt, there is the possibility of the x-ray beam only partially irradiating the material piece, which can result in the capture of an inaccurate XRF spectrum needed to classify the material piece. This can lead to an improper (erroneous) classification and resultant sortation of material pieces (e.g., aluminum alloys). In a material handling system, the area of the intersections between the x-ray beam spots from an x-ray fluorescence system and the material pieces are measured and correspondingly used to correct the measured XRF spectrum associated with each material piece. The material pieces can then be sorted according to the corrected XRF spectrum.