14results about How to "Improve device performance" patented technology

This application discloses a method, device, and medium for dynamic control of uplink power in a repeater, belonging to the field of communications. The method includes: determining the upper limit of the uplink transmit power of the repeater based on the downlink path loss between the repeater and the host base station, the uplink path loss, and the uplink reference sensitivity of the host base station; if the current uplink transmit power is greater than or equal to the upper limit, the current uplink transmit power is reduced by a first preset step size; if the current uplink transmit power is less than the upper limit, the current uplink transmit power is increased by a second preset step size; determining whether this power adjustment triggers a power increase in the user equipment; if so, the current uplink transmit power is increased by the second preset step size; if the current uplink transmit power meets a preset stability condition, the loop process is temporarily exited; otherwise, the main loop is returned to execution until the current uplink transmit power stabilizes. This method can achieve a balance between network-side interference suppression and user-side experience assurance.

The present application discloses a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate, a capacitor structure, and a support structure. The capacitor structure is disposed on the substrate and includes a plurality of columnar bottom electrodes, a capacitor dielectric layer, and a top electrode layer. The top portion of each columnar bottom electrode has a recess, and the capacitor dielectric layer fills the recess. The support structure is disposed between adjacent columnar bottom electrodes and includes a first support layer and a second support layer disposed in sequence from bottom to top. In this way, the adhesion between the columnar bottom electrodes and the dielectric material is strengthened by the capacitor dielectric layer, so that the semiconductor device has a more stable and reliable structure and achieves a relatively optimized device performance.

The application relates to a kind of A-D-A'-D-A type evaporable near-infrared electron acceptor materials and a preparation method and organic photoelectric detector application thereof, which have the following structure: A' is electron-deficient unit, D is electron donor unit, and A is electron acceptor unit.The evaporable near-infrared acceptor small molecule provided in the application effectively enhances intramolecular ICT effect, improves the quinoid content of conjugated skeleton, promotes the delocalization of electron cloud on the conjugated skeleton, thereby extending the light response range to the near-infrared band;It is applied in the field of organic photoelectric detector, and has high responsivity and high detection rate, larger cut-off bandwidth and wide linear dynamic range in the near-infrared region.The application fills the technical gap of evaporable high-performance near-infrared organic electron acceptor materials, and the material provides a key material basis for the industrialization application of flexible near-infrared imaging chip, medical diagnosis and industrial detection, etc., and promotes the progress of intelligent consumer electronics technology.

The utility model relates to the technical field of air coolers, and discloses a tower top air cooler with enhanced heat transfer fins, which comprises a heat dissipation assembly around a heat exchange tube, the heat dissipation assembly is composed of a first assembly semi-ring and a second assembly semi-ring, and the heat dissipation assembly is accurately mounted in an assembly ring groove through sliding connection of a matching seat and a matching groove, so that the position accuracy is ensured, and heat transfer is facilitated; a stable structure formed by the embedded cylinder, the moving plate and the reset spring can resist vibration and airflow impact, the reset spring enables the moving plate to return after the moving plate moves, the heat dissipation assembly is kept stable and uniform in heat transfer, and the inclined face of the end of the limiting base is matched with the embedded groove, so that convenient mounting and dismounting are achieved, and the maintenance cost is reduced. The fins on the surface of the heat dissipation assembly greatly increase the heat transfer area, improve the heat transfer efficiency, abandon traditional installation processes such as welding and expanded connection, avoid the problems of stress concentration and thermal contact resistance, overcome the defects that looseness and displacement are prone to occurring in simple sleeving connection, guarantee stable operation of the air cooler and have the advantages of being easy and convenient to install and efficient in maintenance.

The invention provides a chemical polishing post-processing method of a cadmium sulfide thin film, the cadmium sulfide thin film and a device. The chemical polishing post-processing method comprises the following steps: preparing a cadmium sulfide film on the surface of a substrate or a device structure; the cadmium sulfide thin film is immersed in chemical polishing liquid for aftertreatment, and the chemical polishing liquid is configured to selectively dissolve loose particles on the surface of the cadmium sulfide thin film and promote local rearrangement and recrystallization of the cadmium sulfide thin film. The chemical polishing solution removes loose particles, reduces surface roughness, compensates sulfur vacancies and improves compactness and crystal orientation through a mechanism of'selective light dissolution + defect compensation + local recrystallization ', so that the CdS film obtains more excellent material quality. The method is suitable for any device structure containing the CdS thin film such as a solar cell, a photoelectric detector and a thin film transistor, and has the advantages of being high in universality, mild in process, adaptive to various deposition systems and the like.

This invention discloses a method for element doping of a thin-film solar cell and its absorber layer, relating to the field of thin-film solar cell technology. By immersing the activated absorber layer in a salt solution of a predetermined dopant element and simultaneously applying an exogenous inducing variable, the predetermined element is doped. During the doping process, the diffusion of dopant ions into the grain boundaries and lattice interior of the absorber layer is promoted, ensuring that the element is not affected by the surface morphology, hydrophilicity / hydrophobicity, internal or edge structure of the absorber layer. This solves the problems of difficult-to-control element doping uniformity, poor process stability, and low effective doping activation rate in existing technologies. It achieves the goal of diffusive doping of p-type elements in the absorber layer with high doping uniformity, high doping activation rate, controllable doping process, and compatibility with existing processes.

This application relates to a hole transport layer, a solar cell, a photovoltaic module, and a photovoltaic system. The hole transport layer includes: a hole transport polymer; and a coordination polymer, which is intertwined with the hole transport polymer to form a self-assembled mixed-phase structure. The hole transport layer provided in this application, on the one hand, allows the structural units of the coordination polymer to capture metal ions at the interface of the perovskite layer, improving the surface wettability of the perovskite solution in the hole transport layer and enhancing the crystallinity of the perovskite film, thereby improving the photoelectric conversion efficiency of the solar cell; on the other hand, the self-assembled mixed-phase structure formed by the intertwining of the coordination polymer and the hole transport polymer achieves lattice contact with the perovskite layer at the hole transport layer / perovskite layer interface, reducing the direct contact area between the hole transport layer and the perovskite layer, thereby reducing non-radiative recombination losses of charge carriers caused by contact and improving the device performance of the solar cell.

A semiconductor device includes a dielectric layer, a metal wire, and a plurality of plug structures. The dielectric layer is arranged on the substrate, and the metal wire is arranged in the dielectric layer. The plug structures are arranged in the dielectric layer in a mutually separated manner, are positioned on the metal wires and are in direct contact with the metal wires. The plug structures are arranged in an at least 2 * 2 array along a first direction and a second direction which are perpendicular to each other, and the ratio of the total area of the plug structures to the area of the metal wires is at least greater than 0.13.

The invention relates to the technical field of oral medical equipment, in particular to a split type ultrasonic transducer which comprises an amplitude-change pole, a balancing weight, a connecting rod, a piezoelectric ceramic piece set, an electrode piece, a pre-tightening nut and an external sealing layer. And the glue injection hole and the exhaust hole are communicated with a gap between the piezoelectric ceramic piece group and the connecting rod. When sealant is injected into the gap through the sealant injection hole, air in the gap can be completely exhausted through the exhaust hole, and it is ensured that the sealant can fill the whole gap area. Meanwhile, an external sealing layer is further arranged outside the piezoelectric ceramic piece set, and secondary sealing protection of the piezoelectric ceramic piece set is achieved. By the adoption of the structure, water vapor can be effectively prevented from invading a piezoelectric ceramic area in the high-temperature and high-pressure steam sterilization process, electromechanical conversion efficiency reduction caused by damping of piezoelectric ceramic is avoided, and therefore the equipment performance of the transducer is remarkably improved, and the service life of the transducer is remarkably prolonged.

The multipurpose electric pliers comprise a bottom battery box, a main machine body, a rotary driving piece, a gear, a semi-arc toothed plate, a first transmission piece, a left fixing piece, a spine rod and a first screw. A rotary driving part is arranged in the main machine body, a gear is arranged at the output end of the rotary driving part, a bolt is arranged at one end of the main machine body, a semi-arc-shaped toothed plate is in threaded connection with the bolt, and the semi-arc-shaped toothed plate is meshed with the gear; according to the multipurpose electric pincers for animal husbandry, modular design is adopted, the multipurpose electric pincers for animal husbandry have compatibility design of a mechanical structure, rapid switching of functional modules such as a puncture head can be achieved through a threaded connection structure, the problem of size difference of ear tags of different livestock and poultry is effectively solved, and the physiological difference of the same livestock and poultry in different growth stages is effectively solved; ear tag falling or tissue damage caused by specification mismatching is effectively avoided, complete machine scrapping is replaced with local module replacement, and the equipment maintenance cost is remarkably reduced.

The utility model provides a high-temperature infrared detection window convenient to use, which belongs to the technical field of infrared detection windows and comprises a positioning ring sleeve and a fixing ring, an adjusting mechanism is arranged on one side of the back of the positioning ring sleeve, and a cleaning mechanism is arranged at one end of the adjusting mechanism. The cleaning mechanism comprises a connecting bolt, a limiting plate, a hook-and-loop fastener, cleaning cloth, a limiting clamping groove, a reset spring, a limiting clamping block and an arc-shaped sleeve. Through the design of the cleaning mechanism and the combination of a connecting bolt, a limiting plate and a limiting clamping groove, it is ensured that cleaning cloth is stably installed and convenient to replace, the fixing process of the cleaning cloth is simplified through use of a hook-and-loop fastener, and even pressure of the cleaning cloth in the cleaning process is ensured through arrangement of a reset spring; the overall stability of the cleaning mechanism is enhanced through the structure of the arc-shaped sleeve and the limiting clamping block, dirt can be effectively removed in the cleaning work of the high-temperature infrared detection window, and the cleanliness and the measurement accuracy of the window are kept.

Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate, a capacitor structure, a support structure, and an auxiliary layer. The capacitor structure is disposed on the substrate and includes a plurality of columnar bottom electrodes, a capacitor dielectric layer, and a top electrode layer. The support structure is disposed between adjacent columnar bottom electrodes and includes a first support layer and a second support layer disposed in sequence from bottom to top. The auxiliary layer is disposed only between each columnar bottom electrode and the support structure and directly contacts the first support layer, the second support layer, and sidewalls of the columnar bottom electrode. Thus, the adhesion between the columnar bottom electrode and the support structure is strengthened by the auxiliary layer, and stress buffering is provided, thereby obtaining a more stable and reliable structure and achieving a relatively optimized device performance.

According to an aspect there is provided a method for forming a precursor semiconductor device structure, the method comprising: forming an initial layer stack comprising a sacrificial layer of a first semiconductor material and over the sacrificial layer a channel layer of a second semiconductor material; forming a set of fin structures by patterning trenches in the initial layer stack; forming at least one anchoring structure extending across the fin structures, and while the channel layers are anchored by the at least one anchoring structure: removing the sacrificial layers by a selective etching of the first semiconductor material, thereby forming a longitudinal cavity underneath the channel layer of each fin structure, and depositing an insulating material to fill the cavities, wherein the insulating material is formed of a flowable dielectric; and subsequently recessing the at least one anchoring structure and the insulating material to a level below the cavities such that the insulating material remains in the cavities to form insulating layers underneath the channel layers of each fin structure.

A method for preparing a stretchable electrode, (1) preparing a mixed solution of an organic semiconductor and a dopant: dissolving the organic semiconductor and the dopant in a solvent respectively, mixing them according to a certain molar ratio to form a mixed solution; (2) preparing a patterned transfer medium; (3) preparing a conductive film: spin coating the mixed solution in step (1) on the patterned transfer medium to obtain a conductive film; (4) preparing an electrode: transferring the conductive film to an electrode area of a device to form an electrode. The electrode obtained by the method can effectively control the conductivity, work function and film quality by adjusting the electrode composition or doping ratio, and has excellent mechanical and optical properties.