54results about How to "Improve device performance" patented technology

The invention provides a perovskite passivation layer and a preparation method thereof. According to the invention, a perovskite passivation layer is arranged on the surface of a perovskite absorption layer, and the material of the perovskite passivation layer contains an alkyl diamine compound and a phenylethyl ammonium compound; the phenethyl ammonium compound is selected from p-trifluoromethyl phenylethylamine hydrochloride and / or p-fluorophenethyl hydriodate. According to the perovskite solar cell and the preparation method thereof, the alkyl diamine compound and the phenylethyl ammonium compound are cooperated to form the passivation layer, the simultaneous effect of surface passivation and interface passivation can be exerted, the carrier recombination of the surface and the interface is reduced, the electron extraction capability is improved, and the energy conversion efficiency of the perovskite solar cell is further improved.

The invention provides a control method and system for safe transportation of an electric reactor vibration reduction and isolation device. The method comprises the steps that sensor information, operation parameters and environment parameters of the electric reactor vibration reduction and isolation device in the transportation process are obtained in real time; whether an emergency occurs or is about to occur is judged at least based on the sensor information, and when it is judged that the emergency occurs or is about to occur, a disengaging mechanism is triggered to enable the reactor vibration reduction and isolation device to be disengaged from a carrying tool; and based on the sensor information, the operation parameters and the environment parameters after the reactor vibration reduction and isolation device is released, the trigger threshold and the response time of the release mechanism are adjusted. According to the method, the safety of the reactor vibration reduction and isolation device in the transportation process is improved through the automatic judgment and rapid release mechanism of the emergency situation, the probability of false triggering events is reduced by adjusting the trigger threshold value and the response time of the release mechanism, stability is kept in the normal transportation process, accidental triggering is avoided, and the safety of the reactor vibration reduction and isolation device is improved. And the transportation safety performance is ensured.

The invention belongs to the technical field of solar cells, and relates to synthesis of an organic phosphonic acid micromolecule material and application of the organic phosphonic acid micromolecule material in perovskite solar cells, the micromolecule material adopts a phosphonic acid group as a aiming group, different carbazole aromatic nuclei as head groups, and alkyl chains with different lengths are connected with the head groups and the aiming group; when the small molecule material is used as a hole transport layer material in a perovskite solar cell device, the efficiency and the stability of the device can be effectively improved; the micromolecule material is applied to a perovskite solar cell system as an interface modification layer, good device performance is obtained, and the service life of a perovskite solar cell under a high-temperature illumination condition is prolonged; the photoelectric conversion efficiency exceeds 24%, and the preparation method of the phosphonic acid small molecule material is simple and easy to operate, and has wide application prospects and market potential.

The invention discloses a silicon-free polyurethane heat-conducting gel and a preparation method thereof. The silicon-free polyurethane heat-conducting gel comprises a first component and a second component, the first component is prepared from the following components in parts by weight: 0.5 to 2.5 parts of first polyether polyol, 3 to 4.5 parts of first polyester polyol, 0.4 to 0.6 part of a molecular sieve, 0.05 to 0.1 part of a catalyst, 0.3 to 0.5 part of an antioxidant, 0.3 to 0.5 part of a first wetting dispersant and 92 to 94 parts of heat-conducting filler; the second component is prepared from the following components in parts by weight: 1 to 2 parts of second polyether polyol, 0.5 to 1.5 parts of second polyester polyol, 3 to 5 parts of isocyanate, 0.1 to 0.2 part of water removal agent, 0.3 to 0.5 part of second wetting dispersant and 92 to 94 parts of heat conduction filler. The invention provides the silicone-free polyurethane heat-conducting gel which does not contain organosilicone, and the silicone-free polyurethane heat-conducting gel has heat conductivity, flexibility, high temperature resistance, aging resistance and environmental friendliness.

The invention provides a semiconductor structure and a forming method thereof, the semiconductor structure comprises a semiconductor substrate, a highly doped epitaxial layer and a lightly doped epitaxial layer are sequentially formed on a first surface of the semiconductor substrate, and the semiconductor substrate comprises a first region and a second region; the first part of the semiconductor device is positioned on the lightly doped epitaxial layer of the first region and takes the lightly doped epitaxial layer of the first region as a channel; and the second part of the semiconductor device is located in the low-doped epitaxial layer of the second region, and the second part of the semiconductor device penetrates through the low-doped epitaxial layer and is electrically connected with the high-doped epitaxial layer. The invention provides a semiconductor structure and a forming method thereof. The reliability and the performance of an existing silicon carbide device can be improved.

The invention relates to a self-adaptive temperature control hydraulic loop for a deep-sea scientific investigation winch and a control method, a motor drives a main oil pump and an oil supplementing pump, the main oil pump and a hydraulic motor form a hydraulic closed loop, and the main oil pump drives the hydraulic motor to operate in different directions by changing the output direction of high-pressure oil; a three-way hydraulic control reversing valve and a pressure sensor are arranged in the loop, and the three-way hydraulic control reversing valve is connected with an oil temperature sensor. The three-way hydraulic control reversing valve is connected with an oil return tank through a proportional flow valve via an overflow valve; a variable oil cylinder is further connected in the loop, a piston of the variable oil cylinder is connected with the hydraulic motor, a spring is arranged at the piston end of the variable oil cylinder, and a pressure cavity of the variable oil cylinder is connected with a cavity A and a cavity B of the hydraulic motor through proportional pressure reducing valves and one-way valves respectively. Real-time self-adaptive control over the hot oil flow, the oil supplementing flow and the winch rotating speed can be achieved, the purpose of controlling the temperature rise of a main loop is achieved, the laying and recycling operation efficiency of the deep-sea scientific investigation winch is improved, and the automation degree is improved.

This application discloses a method, device, and medium for dynamic control of uplink power in a repeater, belonging to the field of communications. The method includes: determining the upper limit of the uplink transmit power of the repeater based on the downlink path loss between the repeater and the host base station, the uplink path loss, and the uplink reference sensitivity of the host base station; if the current uplink transmit power is greater than or equal to the upper limit, the current uplink transmit power is reduced by a first preset step size; if the current uplink transmit power is less than the upper limit, the current uplink transmit power is increased by a second preset step size; determining whether this power adjustment triggers a power increase in the user equipment; if so, the current uplink transmit power is increased by the second preset step size; if the current uplink transmit power meets a preset stability condition, the loop process is temporarily exited; otherwise, the main loop is returned to execution until the current uplink transmit power stabilizes. This method can achieve a balance between network-side interference suppression and user-side experience assurance.

The utility model provides a heat exchange plate and welded plate heat exchanger belongs to heat exchange technical field, including frame mechanism and exchange mechanism, the frame mechanism includes support leg, fixed plate is fixedly installed above the support leg, fixed seat is fixedly installed on the outer side wall of fixed plate, and the fixed seat is fixed on the support leg. The right side of the fixing base is fixedly connected with a fixing screw rod, and the outer side wall of the fixing screw rod is sleeved with a fixing nut. The efficient heat exchange function is achieved through the frame mechanism and the exchange mechanism, the stability of the exchange mechanism is guaranteed through the combination of the fixing plates, the fixing screws and the nuts in the frame mechanism, the flowing and heat exchange processes of fluid are effectively managed, and in addition, the heat exchange plates are designed in a W shape and open clamping tenons are adopted, so that the heat exchange efficiency is improved. The heat exchange efficiency and the overall performance of equipment are further improved, meanwhile, manufacturing of the heat exchange plates is simplified, and the efficient, stable and reliable heat exchange function of the heat exchanger is achieved.

The invention provides a semiconductor device and a preparation method thereof, and a storage system, the semiconductor device comprises a plurality of semiconductor columns arranged along a first direction and a second direction, each semiconductor column comprises a first end in a third direction and a bit line located at the first end of the semiconductor column, and the bit lines extend along the second direction and are connected with the semiconductor columns. The protection layer at least covers the side walls of the two sides of the bit line in the first direction, and the plane shared by the first direction and the second direction intersects with the third direction; according to the semiconductor device, the preparation method thereof and the storage system provided by the invention, the bit line is protected in the manufacturing process of the semiconductor device through the arrangement of the protection layer, the protection effect on the bit line in the formation of the semiconductor device is improved, and the device performance of the semiconductor device is improved.

Organic electroluminescent materials and devices thereof are disclosed. The organic electroluminescent material is a metal complex containing a La ligand with a structure as shown in a formula 1. When the novel metal complexes are applied to an electroluminescent device, the half-peak width and the capacitance of the device can be reduced, the response time and the refresh frequency of an OLED display device at a low gray scale can be improved by the organic electroluminescent device, excellent device performance can be kept, the comprehensive performance of the device can be improved, and the application prospect is wide. The method has huge advantages and wide prospects in industrial application. Also disclosed are an organic electroluminescent device comprising the metal complex and a composition comprising the metal complex.

This invention relates to the field of materials. It relates to crosslinkable, self-healing electron transport materials containing disulfide bonds and their applications. In these materials, the disulfide bonds act as dynamic chemical units, capable of ring-opening polymerization to form polymer materials, significantly improving the stability of electron transport materials and endowing them with self-healing properties.

The present invention discloses a microchannel plate and a preparation method thereof, wherein the preparation method comprises: providing a substrate; forming a columnar array at a preselected position on a surface of the substrate; depositing electron multiplying material on the surface of the substrate and the columnar array to form an electron multiplying layer; applying insulating material on the electron multiplying layer to completely cover the columnar array to form an insulating layer; grinding and polishing the surface where the insulating layer is located in the obtained structure until the top of the columnar array is exposed; removing the substrate and grinding and polishing the surface combined with the substrate in the structure until the bottom of the columnar array is exposed; removing the columnar array to obtain an insulating layer structure having through holes and the through holes coated with the electron multiplying layer; and depositing conductive materials on the upper and lower surfaces of the insulating layer structure except for the through holes. The present invention solves the problems of etching of micropores with large aspect ratios, deformation of substrates due to long-term high-temperature treatment, and difficulty in uniformly manufacturing thin film materials for the inner wall of microchannels in the preparation process of the microchannel plate.

The present application discloses a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate, a capacitor structure, and a support structure. The capacitor structure is disposed on the substrate and includes a plurality of columnar bottom electrodes, a capacitor dielectric layer, and a top electrode layer. The top portion of each columnar bottom electrode has a recess, and the capacitor dielectric layer fills the recess. The support structure is disposed between adjacent columnar bottom electrodes and includes a first support layer and a second support layer disposed in sequence from bottom to top. In this way, the adhesion between the columnar bottom electrodes and the dielectric material is strengthened by the capacitor dielectric layer, so that the semiconductor device has a more stable and reliable structure and achieves a relatively optimized device performance.

The invention discloses an organic electroluminescent device. The present invention relates to an organic electroluminescent device and, more particularly, to an organic electroluminescent device comprising a metal complex having a ligand structure of Formula 1 and a first compound having a structure of Formula 2, an organic layer comprising the metal complex and the first compound, and a display element and an electronic apparatus comprising the organic electroluminescent device and the organic layer. The organic electroluminescent device comprises an anode, a cathode and an organic layer arranged between the anode and the cathode, and the organic layer at least comprises a first metal complex and a first compound; wherein the first metal complex comprises a metal M and a ligand La coordinated with the metal M, La has a structure represented by formula 1, and the first compound has a structure represented by formula 2. The device has good comprehensive device performance, and especially the service life of the device can be prolonged.

The invention discloses an electromechanical equipment monitoring system based on the Internet of Things, and relates to the technical field of electromechanical equipment monitoring, the electromechanical equipment monitoring system comprises a data acquisition module, a data processing module, a comprehensive evaluation prediction module and an optimization adjustment module, and operation data of electromechanical equipment are remotely acquired in real time through the data acquisition module based on the Internet of Things. The operation data comprises the power, the load and the temperature of the electromechanical equipment during operation, the data processing module is used for preprocessing the collected operation data, the comprehensive evaluation and prediction module is used for outputting an operation state evaluation value JDY and an early warning maintenance value WJ of the electromechanical equipment, the operation state evaluation value JDY and the early warning maintenance value WJ are input into the optimization and adjustment module, and the optimization and adjustment module is used for performing optimization and adjustment on the operation state evaluation value JDY and the early warning maintenance value WJ. According to the method, the maintenance adjustment factor TY is output, and the parameter values of the load and the power in the current operation state of the electromechanical equipment are adjusted based on the maintenance adjustment factor TY, so that production interruption and safety accidents caused by faults of the electromechanical equipment are avoided, and the reliability and the safety of operation and use of the electromechanical equipment are further improved.

The application relates to a kind of A-D-A'-D-A type evaporable near-infrared electron acceptor materials and a preparation method and organic photoelectric detector application thereof, which have the following structure: A' is electron-deficient unit, D is electron donor unit, and A is electron acceptor unit.The evaporable near-infrared acceptor small molecule provided in the application effectively enhances intramolecular ICT effect, improves the quinoid content of conjugated skeleton, promotes the delocalization of electron cloud on the conjugated skeleton, thereby extending the light response range to the near-infrared band;It is applied in the field of organic photoelectric detector, and has high responsivity and high detection rate, larger cut-off bandwidth and wide linear dynamic range in the near-infrared region.The application fills the technical gap of evaporable high-performance near-infrared organic electron acceptor materials, and the material provides a key material basis for the industrialization application of flexible near-infrared imaging chip, medical diagnosis and industrial detection, etc., and promotes the progress of intelligent consumer electronics technology.

This application discloses a semiconductor device, a manufacturing method thereof, a power conversion circuit, and a vehicle. The semiconductor device includes an N-type semiconductor substrate, an epitaxial layer, a trench structure, a gate, an interlayer dielectric layer, a source, and a drain. The epitaxial layer includes a first P-type semiconductor region. A bottom of the trench structure is in contact with the first P-type semiconductor region. The trench structure includes a plurality of first trenches and one second trench. The first trenches extend in a first direction. The second trench and each of the plurality of first trenches are disposed in a cross manner and communicate with each other. The gate is filled in the trench structure, and is spaced apart by a gate dielectric layer. The interlayer dielectric layer covers the gate and has a contact hole that extends in a second direction. The source is disposed at the interlayer dielectric layer. The source is in contact with the source region through the contact hole and is connected to the first P-type semiconductor region. The drain is disposed on a side that is of the semiconductor substrate and that is away from the epitaxial layer. In this way, total on-resistance of the device is reduced.

This application discloses a semiconductor device, a manufacturing method thereof, a power conversion circuit, and a vehicle. The semiconductor device includes an N-type semiconductor substrate, an epitaxial layer, a trench structure, a gate, an interlayer dielectric layer, a source, and a drain. The trench structure is disposed at the epitaxial layer. The trench structure includes a plurality of first trenches and one second trench. The plurality of first trenches extend in a first direction and are arranged at intervals in a second direction. The second trench extends in the second direction. The second trench and each of the plurality of first trenches are disposed in a cross manner and communicate with each other. The gate is filled in the trench structure, and is spaced apart by a gate dielectric layer. The interlayer dielectric layer covers the gate, and has a contact hole that extends in the second direction. The source is disposed at the interlayer dielectric layer, and is in contact, through the contact hole, with the epitaxial layer. The drain is disposed on a side that is of the semiconductor substrate and that is away from the epitaxial layer. In this way, total on-resistance of the device is reduced.

The invention discloses a preparation method of a perovskite active layer, a perovskite battery and a perovskite material, and belongs to the technical field of perovskite batteries. According to the invention, the surface of a substrate is coated with a perovskite precursor solution to form a perovskite active layer; the perovskite precursor solution contains self-assembled small molecules, and the self-assembled small molecules comprise the following structural formula: # imgabs0 #. The self-assembled small molecules are applied to preparation of a perovskite active layer of a perovskite cell, an ordered and ultrathin hole transport layer can be formed on a buried interface of the perovskite active layer, the interface of the perovskite active layer is passivated, and the perovskite active layer is formed in the hole transport layer. And the interface contact of the perovskite active layer is improved, so that the energy loss in the hole transport process can be reduced, excellent charge transport and charge extraction capabilities are provided, and the perovskite cell has better device performance.

The application relates to a semiconductor structure and a forming method thereof. The semiconductor structure comprises a substrate, a first transistor comprising a first channel in the substrate and a first end on the surface of the substrate, the first end being used for connecting with a first type of storage unit, and a second transistor comprising a second channel in the substrate and a second end on the surface of the substrate, the second end being used for connecting with a second type of storage unit, and the width of the second channel is greater than that of the first channel. The application can make the manufacturing process of the first transistor compatible with that of the second transistor, and simplify the manufacturing method of the semiconductor structure. Furthermore, the application is helpful to improve the integration density of the storage unit with the first transistor and / or the second transistor in the memory, and reduce the size of the storage unit, and lays a foundation for expanding the application field of the memory.

The present invention relates to a compound and its application, and an organic electroluminescent device comprising the compound. The compound has the following structure, wherein X 1 and X 2 are independently N or B; Ring A represents a benzene ring, a naphthalene ring or an anthracene ring; Ring B and Ring C each independently represent a benzene ring, a naphthalene ring or an anthracene ring; Ring D represents a C8-C60 fused aromatic hydrocarbon, and Ring E and Ring F each independently represent a C4-C30 aromatic hydrocarbon. When the compound of the present invention is used as a light-emitting material in an OLED device, it exhibits excellent device performance and stability. The present invention also protects an organic electroluminescent device using the compound of the above general formula. #imgabs0#

The utility model relates to the technical field of air coolers, and discloses a tower top air cooler with enhanced heat transfer fins, which comprises a heat dissipation assembly around a heat exchange tube, the heat dissipation assembly is composed of a first assembly semi-ring and a second assembly semi-ring, and the heat dissipation assembly is accurately mounted in an assembly ring groove through sliding connection of a matching seat and a matching groove, so that the position accuracy is ensured, and heat transfer is facilitated; a stable structure formed by the embedded cylinder, the moving plate and the reset spring can resist vibration and airflow impact, the reset spring enables the moving plate to return after the moving plate moves, the heat dissipation assembly is kept stable and uniform in heat transfer, and the inclined face of the end of the limiting base is matched with the embedded groove, so that convenient mounting and dismounting are achieved, and the maintenance cost is reduced. The fins on the surface of the heat dissipation assembly greatly increase the heat transfer area, improve the heat transfer efficiency, abandon traditional installation processes such as welding and expanded connection, avoid the problems of stress concentration and thermal contact resistance, overcome the defects that looseness and displacement are prone to occurring in simple sleeving connection, guarantee stable operation of the air cooler and have the advantages of being easy and convenient to install and efficient in maintenance.

The invention provides a chemical polishing post-processing method of a cadmium sulfide thin film, the cadmium sulfide thin film and a device. The chemical polishing post-processing method comprises the following steps: preparing a cadmium sulfide film on the surface of a substrate or a device structure; the cadmium sulfide thin film is immersed in chemical polishing liquid for aftertreatment, and the chemical polishing liquid is configured to selectively dissolve loose particles on the surface of the cadmium sulfide thin film and promote local rearrangement and recrystallization of the cadmium sulfide thin film. The chemical polishing solution removes loose particles, reduces surface roughness, compensates sulfur vacancies and improves compactness and crystal orientation through a mechanism of'selective light dissolution + defect compensation + local recrystallization ', so that the CdS film obtains more excellent material quality. The method is suitable for any device structure containing the CdS thin film such as a solar cell, a photoelectric detector and a thin film transistor, and has the advantages of being high in universality, mild in process, adaptive to various deposition systems and the like.

This application discloses a semiconductor device, a manufacturing method, a power conversion circuit, and a vehicle. The semiconductor device includes an N-type semiconductor substrate, a first epitaxial layer, a plurality of gate trenches disposed at intervals, a gate, an interlayer dielectric layer, a source, and a drain. The plurality of gate trenches are disposed at the first epitaxial layer. The plurality of gate trenches extend in a first direction. The gate includes a first gate and a second gate that are in contact with each other. The first gate is filled in the gate trench, and is spaced apart by a gate dielectric layer. The second gate is disposed on top of the first epitaxial layer and is spaced apart by the gate dielectric layer. The interlayer dielectric layer covers a side that is of the gate and that is away from the semiconductor substrate, and has contact holes that extend in a second direction. The source is disposed on a side that is of the interlayer dielectric layer and that is away from the semiconductor substrate, and is in contact with the first epitaxial layer through the contact hole. The drain is disposed on a side that is of the semiconductor substrate and that is away from the first epitaxial layer. In this way, total on-resistance of the device is reduced.

The invention discloses a preparation method of a transistor, a transistor array and electronic equipment, and relates to the technical field of semiconductors. The method comprises the following steps: sequentially stacking a first silicon film layer, a germanium-silicon film layer and a second silicon film layer on a silicon substrate; generating bit lines on the silicon substrate, the first silicon film layer, the germanium-silicon film layer and the second silicon film layer along the bit line direction; word lines are generated on the second silicon film layer and the germanium-silicon film layer in the word line direction; and depositing a low dielectric material in the first etching groove, the second etching groove and the second silicon film layer, forming an air gap by etching and depositing a silicon dielectric material at the top, and isolating the gate material to obtain the vertical gate all-around transistor. According to the VGAA transistor, oxidation is avoided by depositing and covering a layer of protective material between the ring gate and the top source / drain, and finally, air gaps between word lines are formed through high-deposition-rate and low-step covering media, so that stray capacitance between the word lines is reduced, the device performance of the VGAA transistor is improved, and the preparation complexity is reduced.

The invention discloses a low-defect-density compound semiconductor film and a preparation method and application thereof, and the method comprises the steps: alternately growing a compound semiconductor layer and a defect blocking layer on a substrate, and enabling the defect blocking layer to be provided with a groove-shaped structure, and to be used for limiting defect propagation and guiding the transverse growth of the compound semiconductor layer; gradually expanding the low-defect area through multiple alternate growth until a complete low-defect-density compound semiconductor film is formed; depositing a two-dimensional material layer on the terminal layer grown on the compound semiconductor film for subsequent stripping of the low-defect-density compound semiconductor film; and transferring the separated film to a new substrate, and repeating the growing and stripping steps to realize industrial batch production. The defect barrier layer with the groove-shaped structure is introduced to the surface of the thin film, the deposition and stripping technology of the two-dimensional material layer is combined, defect propagation can be effectively limited, the crystal quality of the thin film is improved, lossless separation and repeated transfer of the thin film are achieved, and the method is suitable for batch industrial production.

The utility model discloses a kind of circuit board shielding shell structures of anti-electromagnetic interference, is related to circuit board electromagnetic interference technical field.One kind of circuit board shielding shell structure of anti-electromagnetic interference, including shell, shell is fixedly connected with high magnetic permeability metal layer, high electric conductivity metal layer and ferrite wave-absorbing material layer, high magnetic permeability metal layer is permalloy;The utility model is through the multilayer cooperation of high magnetic permeability metal layer (permalloy), high electric conductivity metal layer (copper), ferrite wave-absorbing material layer, realizes full-band electromagnetic interference protection, permalloy high-efficiency absorption, reflection low-frequency interference, copper layer strong shielding high-frequency interference, ferrite wave-absorbing material end absorption residual interference, three layers of relay make it difficult for external electromagnetic interference to invade, while inhibiting circuit board itself electromagnetic radiation exudation, create super-low interference clean operating environment for circuit board, guarantee electronic equipment signal transmission, circuit logic stable, improve equipment performance and reliability.

The utility model discloses a semiconductor device which comprises a substrate, a plurality of storage node pads and a capacitor structure. The substrate comprises a peripheral area, and the storage node bonding pads are arranged on the substrate in a mutually separated mode to form an array. The capacitor structure is located on the substrate and comprises a plurality of capacitors arranged in an array, and at least two capacitors are in physical contact in the direction parallel to the substrate. Therefore, the dummy capacitors are arranged around the storage array, so that the structure defect of the semiconductor device possibly derived due to continuous increase of the density of the storage unit can be improved, and the relatively optimized device efficiency can be achieved.