851 results about "Schottky diode" patented technology

The present invention discloses a prediction method for a crosstalk spike in a half bridge of current-source inverter with silicon carbide devices, where, the prediction method includes calculation of the crosstalk voltage spike in the circuit of current-source type double-pulse test and analysis of the effect of each parameter on the magnitude of the crosstalk spike. The prediction method of the present invention analyzes the horizontal conduction crosstalk mechanism between the gate-source junction of the MOSFET caused by the high-frequency switching action of the silicon carbide (SiC) MOSFET and the SiC Schottky diode connected in series, and derives the prediction model for the crosstalk voltage spike in the half-bridge of current-source inverter. Based on the equivalent circuit of the current-source-type double-pulse test and the crosstalk-induced mechanism, the extreme value of crosstalk voltage spike is accurately predicted, which is helpful to analyze the effects of the drive circuit and the parameters of the power circuit on the crosstalk voltage spike through the prediction model.

The invention relates to the technical field of direct-current power supplies, in particular to a silicon carbide material-based high-power synchronous rectification direct-current power supply and a control method thereof, and the silicon carbide material-based high-power synchronous rectification direct-current power supply comprises an input filtering module, a high-frequency inversion module, a synchronous rectification module, an output filtering module and a control module; the output end of the high-frequency inversion module is connected with the input end of the synchronous rectification module, and the high-frequency inversion module is composed of a full-bridge inversion circuit composed of SiC MOSFETs. The output end of the synchronous rectification module is connected with the input end of the output filtering module, and the synchronous rectification module comprises a topological structure in which a SiC Schottky diode and a SiC MOSFET are connected in parallel; and the control module is in signal connection with the high-frequency inversion module and the synchronous rectification module, acquires input voltage, output voltage, current and temperature parameters in real time, and controls the on-off state of each module through a driving signal. The invention has the effects of effectively reducing the power supply energy loss and improving the power supply efficiency.

A SiC trench MOSFET with an embedded junction Schottky barrier diode (JBSD) having P-shield (PS) regions surrounding bottoms of source-body-Schottky contact (SBSC) trenches for gate oxide electric-field and switching loss reductions is disclosed. A source metal connects with the PS regions and the JBSD directly. Sidewall P (SP) regions are formed along a portion of sidewalls of the SBSC trenches to improve a tradeoff between a drain-source leakage current of the SiC trench MOSFET and a forward voltage of the JBSD. The device further comprises an N-type shield region formed below each of gate trenches for gate oxide electric field strength and specific on-resistance reductions.

The invention discloses a high-power microwave amplitude limiting circuit which has a three-stage structure, a first-stage circuit and a second-stage circuit are respectively composed of three Schottky diodes at the upper part and three Schottky diodes at the lower part, and a third-stage circuit is respectively composed of three PIN diodes at the upper part and three PIN diodes at the lower part and is symmetrically distributed. Each stage of circuit is connected by a quarter-wavelength impedance transmission line, and two ends of the circuit are connected in series with a capacitor. After a radio-frequency signal is input from the first port, the Schottky diodes are rapidly conducted and generate direct current, the direct current can provide forward bias for the PIN diodes which are reversely connected in parallel after passing through the Schottky diodes of the first two stages, the bias current can rapidly reduce the forward conduction resistance of the PIN diodes, the PIN diodes are made to be in an approximate short-circuit state, and therefore the positive conduction resistance of the PIN diodes is reduced. The current is output from the third stage, and at the moment, the circuit can reflect most incident power so as to achieve the purpose of amplitude limiting. The invention overcomes the defects of difficult circuit structure adjustment, poor performance and the like, and has the advantages of low power consumption, large power capacity, small peak leakage energy, small response time and the like.

The invention discloses a gallium oxide Schottky diode with a passivated two-dimensional semimetal insertion layer and a preparation method thereof, and the gallium oxide Schottky diode comprises a substrate which is made of N-type heavily doped beta-Ga2O3 with different crystal orientations; the epitaxial layer is located on the substrate; wherein the material of the epitaxial layer is N-type unintentionally doped beta-Ga2O3; the two-dimensional semimetal growth insertion layer is located on the epitaxial layer; the protection layer is located on the two-dimensional semimetal growth insertion layer, and the orthographic projection of the protection layer and the orthographic projection of the two-dimensional semimetal growth insertion layer are overlapped in the direction perpendicular to the substrate; the terminal structure is located on the epitaxial layer, the terminal structure is of an annular structure, and the terminal structure is arranged around the two-dimensional semimetal growth insertion layer and the protection layer; the anode covers the protective layer and a part of the terminal structure; and the cathode is positioned on one side, deviating from the epitaxial layer, of the substrate. According to the beta-Ga2O3-based SBD device provided by the invention, the two-dimensional material can adjust the energy band of the Ga2O3 surface by virtue of the inherent Van der Waals surface, and endow the Schottky barrier with extremely strong flexibility.

Disclosed structures and methods include a top chip flipped relative to a bottom chip and bonded thereto. On the top chip, dielectric material layers separate a transistor from the bottom chip. The transistor includes source and drain regions, a body region on a channel region between the source and drain regions, and a gate structure adjacent to and between the channel region and the dielectric material layers. An insulator layer is on the transistor opposite the dielectric material layers and includes an opening extending to the body region. Optionally, a semiconductor layer is at the bottom of the opening. A contact extends into the opening to the body region (or to the semiconductor layer thereon, if applicable).

The invention discloses an asynchronous step-down chip single-base-island packaging structure and method.The asynchronous step-down chip single-base-island packaging structure comprises a lead frame, a single base island, an integrated control circuit wafer, a silicon wafer, a ceramic chip capacitor, a laminated chip inductor and a Schottky diode, the lead frame is provided with the single base island and a plurality of pins, the single base island is divided into a first chip area and a second chip area, and the first chip area and the second chip area are integrated; an integrated control circuit wafer is placed on a first chip area, a silicon wafer is placed on a second chip area, a ceramic chip capacitor and a laminated chip inductor are mutually bonded and connected and are respectively placed on the silicon wafer, and a Schottky diode is placed on the silicon wafer, so that the number of elements on a circuit board is reduced, the area of the circuit board is reduced, and the cost is reduced. And the manufacturing cost and the debugging difficulty of the PCB are reduced.

The utility model discloses an intrinsic safety power supply circuit and a fuel electrochemical oxygen analyzer. The intrinsic safety power supply circuit comprises a first MOS tube, a first capacitor, a second capacitor, a first resistor, a first Schottky diode, a first Zener diode and a second Zener diode, the power supply module of the fuel electrochemical oxygen analyzer comprises the intrinsic safety power supply circuit and further comprises a sensor module, an AD conversion module, a key module, a single chip microcomputer module, an analog output module and a display driving module which are connected with the power supply module, and the single chip microcomputer module is connected with the AD conversion module, the key module, the analog output module and the display driving module. The sensor module is connected with the AD conversion module, and the analog output module is connected with external equipment; the fuel electrochemical oxygen analyzer adopts the intrinsically safe power supply circuit to limit the working current and voltage in the circuit so as to control the power consumption of the whole machine, so that explosion prevention is realized, and the fuel electrochemical oxygen analyzer can measure the oxygen concentration in a flammable and explosive environment.

The invention discloses a Schottky diode and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor device comprises a semiconductor substrate, a first doped region, a second doped region and a third doped region, the semiconductor substrate comprises a first surface region, the first doped region extends into the semiconductor substrate from the first surface region, and the first doped region is obtained by doping aluminum ions with a first doping concentration. The second doped region extends from the first surface region to the semiconductor substrate, and the first doped region and the second doped region are arranged in a staggered manner along the first direction of the first surface region. The second doped region is obtained by doping aluminum ions with a second doping concentration, and the first doping concentration is greater than the second doping concentration. The third doped region extends into the semiconductor substrate from the first surface region and is obtained by doping aluminum ions with the first doping concentration, and the area of the third doped region is larger than that of the first doped region. Therefore, the reverse voltage withstanding performance of the diode is improved, and the forward conduction voltage drop is reduced.

The utility model provides an efficient charging circuit for a nickel-metal hydride battery, which belongs to the technical field of charging circuits, and comprises a DCDC charging circuit, a current sampling conversion circuit and a voltage hysteresis charging control circuit, a Celloon XL4001 step-down DCDC converter with a constant current loop is selected, and an external Schottky diode TS1 is added to play a follow current role; the charging voltage is conveniently adjusted according to the resistance values of the R7 and R10 resistors; the current sampling conversion circuit adopts a battery high-side sampling mode, so that the situation that the output voltage of the battery drops too much due to too large voltage drop of a sampling resistor during low-end sampling during battery power supply is avoided; the operational amplifier introduces a sampling differential voltage signal into a current detection pin of the XL4001; temperature adjusting design is introduced into hysteresis design, reverse change is carried out along with the temperature, then the upper limit value and the lower limit value of hysteresis charging voltage are changed, and the defect that a traditional nickel-metal hydride battery charging circuit has adverse effects on the service life of a battery is overcome.

The invention provides a process method for improving the performance of a beta-Ga2O3 device through low-energy proton irradiation, and relates to the technical field of electronic components, and the method comprises the following steps: carrying out low-energy proton irradiation on the basis of irradiation experiment parameters at a preset environment temperature; low-energy proton irradiation with different fluence is carried out on the beta-Ga2O3 Schottky diode in a preset incidence mode to determine irradiation process data, and in combination with deep level transient spectroscopy (DLTS) analysis and device simulation, defect evolution and a hydrogen passivation mechanism caused in a beta-Ga2O3 epitaxial layer after low-energy proton incidence are revealed. According to the method, the cognitive limitation that traditional radiation must cause performance degradation of devices is broken through, and the field of low-energy proton irradiation which is not fully researched is focused.

The invention discloses a trench power device and a preparation method thereof, the trench power device comprises a substrate and an epitaxial layer, and further comprises at least one trench gate structure located in the epitaxial layer, the trench gate structure comprises a gate electrode and a gate oxide layer, the gate electrode has a first side surface and a second side surface which are oppositely arranged in a second direction, and the first side surface and the second side surface are opposite to each other in the second direction. The gate oxide layers are respectively located on the first side surface of the gate and on one side, close to the substrate, of the gate, and the second direction is parallel to the first surface; the Schottky diode structure at least makes contact with the second side face and the first epitaxial layer, the Schottky diode structure is located on the second side face of the grid electrode, the Schottky diode structure comprises a plurality of doped regions, and the multiple doped regions comprise first doped regions and second doped regions which are alternately arranged in the second direction; the first doped region and the second doped region have different doping types. The problems that in the prior art, a grid electrode of a groove power device is resistant to static breakdown, and the device is high in switching loss under the high-frequency working condition are solved.

The utility model discloses a power device which comprises a gate structure, the gate structure is located on the side, away from a substrate, of a second epitaxial layer, the gate structure comprises a gate oxide layer, a gate and a Schottky diode structure, and the gate oxide layer is in contact with a second sub-epitaxial part, a part of the second sub-epitaxial part located between an injection region and a first sub-epitaxial part and a part of an injection region. The gate electrode and the Schottky diode structure are located on the side, away from the substrate, of the gate oxide layer, the Schottky diode structure comprises multiple doping layers arranged in a stacked mode in the second direction, any two adjacent doping layers have different doping types, the gate electrode is located on the side face, in the first direction, of the Schottky diode structure, and the gate electrode is located on the side face of the Schottky diode structure. The doped layer, in contact with the gate oxide layer, in the multiple doped layers is a first doped layer, the gate is in contact with the first doped layer, and the second direction is the direction from the substrate to the first epitaxial layer. The problem of poor electrostatic breakdown resistance of a grid electrode of a power device in the related technology is solved.

The SiC JFET structure comprises a drain electrode metallization layer, an N + substrate layer, an N-drift region, a P first gate region, an N current expansion region, a P second gate region, an N + source region, a gate electrode metallization layer, an insulating dielectric layer, a source electrode ohmic contact layer, a source electrode Schottky contact layer and a source electrode metallization layer. The P first gate regions are embedded in the upper surface of the N-drift region, the gap between the two P first gate regions forms a vertical conductive channel structure, and the source Schottky contact layer is located right above a channel to form a Schottky diode structure, so that the conduction loss during follow current of the device can be effectively reduced; meanwhile, the gate metallization layer is located at the bottom of the gate trench and directly connected with the P first gate region, the gate metallization layer is isolated from the source metallization layer through the insulating dielectric layer in the gate trench, and the device has the advantages of being small in reverse blocking leakage current, high in reliability and the like.

The invention provides an LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and a preparation method thereof. The LDMOS device comprises a semiconductor substrate; the first well region and the second well region are arranged in the semiconductor substrate, and the first well region and the second well region are arranged adjacently; the body region is arranged in the second well region; the source region is arranged in the body region; the body extraction region and the Schottky region are arranged in the body region and are adjacent to the source region, a metal layer is formed on the Schottky region, and the Schottky region is in contact with the metal layer to form a Schottky diode; the drain region is arranged in the first well region; and the gate structure is formed on the surface of the semiconductor substrate. According to the invention, the device has a lower ESD trigger voltage in an ESD event, and the ESD protection capability of the device is greatly improved.

The invention relates to the technical field of Internet of Things, in particular to a circuit for simultaneously converting UART (Universal Asynchronous Receiver / Transmitter) to multi-path different level communication, which comprises a double-USB input module, a power supply processing module, a USB-UART core conversion module and a multi-path level conversion module, the double-USB input module comprises an MINI-USB interface J6 and a USB-B interface J8, VBUS pins of the two interfaces are connected in parallel through a Schottky diode and then output to the power supply processing module, and data differential pair pins are connected in parallel and then connected to the USB-UART core conversion module; and the power supply processing module comprises an LDO (Low Dropout Regulator) voltage stabilizing chip and a filter capacitor, and is used for converting 5V voltage output by the double-USB input module into 3.3 V stable voltage. The circuit design that the UART is connected with various different levels for communication is adopted, the tool integration technology is achieved, the design that the two USB ports are connected in parallel is adopted, the compatibility of the USB data line can be effectively improved, the demands of customers are met, and the technical difficulty that one UART bus is connected with multiple USB ports is broken through.

The invention discloses a frequency quasi-independent controllable double-frequency electrically small rectification circuit, and belongs to the field of radio frequency energy collection. The rectifying circuit comprises a double-frequency matching network, a blocking capacitor, two Schottky diodes, a filter capacitor and a resistive load. The dual-frequency matching network is composed of a capacitor, an inductor and a microstrip line and used for achieving impedance matching of two working frequency points and achieving quasi-independent regulation and control of the positions of the two frequency points by adjusting the value of the inductor and the length of the microstrip line. And the microstrip line is bent for five times so as to realize the miniaturization of the overall structure of the circuit. The blocking capacitor is used for blocking a direct current component and avoiding energy feedback; the two Schottky diodes are used for converting a radio frequency signal into direct current energy; the filter capacitor is used for improving the smoothness of output direct current energy and improving the energy conversion efficiency. The device is compact in structure, adjustable in frequency point position and suitable for a dual-band radio frequency energy collection scene.

The invention discloses a gallium oxide junction barrier Schottky diode and a preparation method thereof, and relates to the technical field of Schottky diodes. The diode comprises a cathode, a gallium oxide substrate and a gallium oxide drift layer which are sequentially stacked from bottom to top, wherein the upper surface of the gallium oxide drift layer is of a boss structure; the boss structure comprises a convex part and a shoulder part; the first dielectric layer comprises a dielectric layer A of which the relative dielectric constant is greater than or equal to 9 and a dielectric layer B of which the breakdown electric field intensity is greater than or equal to 8MV / cm, which are stacked from bottom to top; the anode is positioned on the surface of the lug boss; the second dielectric layer is positioned on the surface of the lug boss and on the side surface of the anode; the metal field plate is located on the second dielectric layer; the P-type semiconductor layer covers the metal field plate, the second dielectric layer, the side surface of the convex part, the surface of the shoulder part and the surface of the first dielectric layer; and the third dielectric layer covers the side surface of the anode part, the surface of the P-type semiconductor layer and the surface of the first dielectric layer part. The device can bear higher reverse breakdown voltage.

The invention discloses a high-safety nanosecond-order delay transistor testing system and method, belongs to the field of transistor testing, and can test the characteristics of a transistor to be tested at any drain voltage stress value, drain voltage stress duration and load current based on nanosecond-order measurement delay on the basis of ensuring the safety of the testing system and experimenters. The circuit comprises switches S1, S2 and S3, resistors RA and RC, Schottky diodes D1 and D2, a power inductor L and a power supply VDD. The conduction time of the switch S1 can be controlled to control the duration of the post-stage circuit for bearing the high voltage VDD; the current value of the power inductor L at the end of charging can be controlled by controlling the conduction time of the switch S2; by testing the voltage and the current of the switch S3, the switch transient characteristic, the on-resistance characteristic and the like of the switch S3 can be obtained. Simulation and experiments prove that the measurement delay of switching to the test state after the voltage stress of the drain electrode is ended is nanosecond magnitude, and the situation of'large current connection caused by mistaken switching-on of a series switch 'does not exist, so that the circuit safety is higher.

The invention provides a high-voltage gallium oxide Schottky diode under a field limiting ring terminal structure. The high-voltage gallium oxide Schottky diode comprises a cathode metal layer (1), a highly-doped N-type gallium oxide substrate (2), a lowly-doped N-type gallium oxide epitaxial layer (3) and an anode metal layer (4) which are sequentially stacked from bottom to top, the anode metal layer is connected with a main junction (5) at the top of the low-doped N-type gallium oxide epitaxial layer; a plurality of field limiting rings (6) are also arranged at the top of the low-doped N-type gallium oxide epitaxial layer; according to the gallium oxide SBD device, the process steps are simplified, effective industrial production can be achieved, the electric field crowding phenomenon of the terminal area is relieved through the device design, electric field distribution is improved, and the voltage resistance and reliability of the gallium oxide SBD device are further improved. Under the structure, the breakdown voltage of the device is greatly improved, only the characteristic on-resistance is slightly improved, and finally a high PFOM value is achieved.

The invention relates to a compensation polarization doped aluminum nitride Schottky diode and a manufacturing method thereof. The compensation polarization doped aluminum nitride Schottky diode comprises a substrate, an unintentionally doped AlN layer, a Si doped AlN layer and a Si compensation doped Al component slowly-decreasing layer from bottom to top. The surface of the Si-doped AlN layer is in Schottky contact with the anode of the diode; the Si compensation doped Al component slowly-decreasing layer is from AlN to Al < x > Ga < 1-x > N from bottom to top, the value range of x is 0-0.3, and ohmic contact is formed between the Si compensation doped Al component slowly-decreasing layer and the cathode of the diode. According to the aluminum nitride Schottky diode, through compensation polarization doping, the metal contact performance is improved, the problems that the material surface is rough and the carrier mobility is low due to impurity doping are solved, and the Schottky diode with the high potential barrier and the low ideal factor is achieved.

The invention provides a high-voltage-resistant gallium oxide trench junction barrier Schottky diode. The high-voltage-resistant gallium oxide trench junction barrier Schottky diode comprises a cathode metal layer, a high-doping N-type gallium oxide substrate, a low-doping N-type gallium oxide epitaxial layer, an etching table top first dielectric layer, an etching table top second dielectric layer, a P-type nickel oxide layer, a dielectric layer and an anode metal layer which are sequentially stacked from bottom to top. According to the invention, P-type nickel oxide and gallium oxide are introduced to construct a heterostructure into a JBS structure, the JBS structure is combined with the etched trench to form a trench junction barrier Schottky diode, and the device has lower specific on-resistance, can bear higher reverse breakdown voltage, and is a gallium oxide JBS device with excellent performance.

The invention provides a chip electrostatic protection circuit and a protection method thereof.The chip electrostatic protection circuit comprises an electrostatic transmission module, a clamping module and a discharge protection module, electrostatic energy of an input port and an output port of a chip is transmitted through the electrostatic transmission module, and the clamping module is connected with the electrostatic transmission module and a power port; static energy is discharged through the clamping module, when chip control voltage is input into the chip input and output port, the clamping module is prevented from being mistakenly conducted through the discharging protection module, and on the basis of a reverse series connection structure of a diode in the static transmission module and a Schottky diode in the clamping module, the clamping module is prevented from being mistakenly conducted. And DC isolation between the input and output ports of the chip and the power port is realized. According to the protection circuit provided by the invention, the DC isolation of the chip input / output port and the power supply port is realized through the Schottky diode, the power-on time sequence requirement is avoided, and the voltage input range is expanded; in order to prevent the static discharge access from being opened mistakenly when the chip works normally, the discharge protection module controls the control voltage of the static discharge access.

The invention relates to the technical field of photovoltaic integrated circuits, in particular to a photovoltaic module positioning and information transmission circuit which can be matched with a photovoltaic bypass circuit to report the state of a photovoltaic module under the condition that the number of discrete components is extremely limited. And meanwhile, the reliability of the photovoltaic system is improved, and digital and intelligent management of the solar cell panel is realized. In addition, according to the technical scheme, extra external power supply and high-voltage isolation are not needed, power can be taken from a photovoltaic system, and meanwhile, a self-floating power ground is provided. Finally, the technical scheme can be suitable for various photovoltaic bypass circuit schemes consisting of a Schottky diode, an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and a universal control chip and consisting of an MOSFET and a photovoltaic bypass control chip, and has better universality.

The invention discloses a system for simultaneously suppressing second-order nonlinearity and third-order nonlinearity in a direct modulation laser (DML), which belongs to the field of optical communication, and can simultaneously suppress the second-order nonlinearity and the third-order nonlinearity in the system under the condition of DSP-FREE through the combined action of a broadband pre-distortion circuit and an optical path push-pull structure. Wherein at a transmitting end, a set of Schottky diodes and Chebyshev gradient transmission lines which are connected in parallel reversely are adopted to build a DC-10GHz broadband pre-distortion module, and a radio frequency signal generates a reverse third-order intermodulation (IMD3) component through an analog pre-distortion circuit so as to counteract forward third-order nonlinearity of a laser; at a receiving end, a second-order intermodulation (IMD2) component is differentially eliminated through an optical path push-pull modulation architecture. Compared with a traditional DSP scheme, digital signal processing is not needed, the method has the advantages of being low in complexity and wide in bandwidth, and nonlinear accurate compensation of an optical communication system can be achieved.

A high-safety transistor testing system and method with nanosecond-level delay is disclosed, belonging to the field of transistor testing. It enables transistor characteristic testing under arbitrary drain voltage stress values, drain voltage stress durations, and load currents based on nanosecond-level measurement delays, while ensuring the safety of the testing system and personnel. The circuit includes: a switch. S 1, S 2, S 3. Resistance R A , R C Schottky diode D 1, D 2. Power Inductor L ,power supply V DD Control switch S 1. The conduction time can control the high voltage that the subsequent circuit can withstand. V DD Duration; control switch S 2. On-time can control the power inductor L Current value at the end of charging; test switch S From the voltage and current of 3, we can determine the switch. S 3. Switching transient characteristics, on-resistance characteristics, etc. Simulation and experiments show that the measurement delay of switching to the test state after the drain voltage stress ends is on the order of nanoseconds, and there is no situation of "accidental opening of series switch leading to large current conduction", so the circuit safety is higher.

The invention discloses a silicon carbide power device junction temperature online accurate extraction method based on a double-sensor Kalman filtering weighted average algorithm, and the method comprises the following steps: 1, enabling a loss model of a power device to receive the phase current, the DC bus voltage, the duty ratio, the phase current and the DC bus voltage from an inverter; the on resistance of the SIC MOSFET, the reference direct current bus voltage, the on loss energy and the off loss energy under the on current and the on threshold voltage of the Schottky diode are obtained from a data manual of the chip, and the gate driving resistor is used for extracting the junction temperature and monitoring operation in real time; and step 2, obtaining an estimated junction temperature through loss calculation of a power device and a thermal network model, and weighting the junction temperatures estimated at different measurement points through a Kalman filtering weighted average algorithm to obtain a more accurate junction temperature for next iterative calculation. According to the method, the limitation of a traditional single sensor in a dynamic working environment can be effectively compensated, and the accuracy and the real-time performance of junction temperature monitoring are improved.

The invention belongs to the field of semiconductor devices, provides a gallium nitride high-electron-mobility transistor integrated with a Schottky diode and a preparation method of the gallium nitride high-electron-mobility transistor, and aims to solve the problem that a conventional gallium nitride high-electron-mobility transistor (GaN HEMT) lacks a body diode. According to the invention, monolithic integration of the SBD and the GaN HEMT is realized through structural design, a low-impedance path is provided for reverse current, and the integration mode not only retains the original high performance characteristic of a GaN device, but also additionally endows the GaN device with reverse conduction and reverse recovery capabilities; moreover, through the structural design, the SBD can be synchronously completed on the basis of the existing GaN HEMT process, a special process or new equipment is not needed, and the cost is effectively controlled while the performance improvement is ensured; compared with an external interconnection diode scheme, parasitic inductance caused by lead bonding is eliminated, the voltage overshoot and ringing phenomena in the switching process are remarkably reduced, high-frequency switching application is facilitated, and switching loss can be greatly reduced.

The invention discloses a diamond diode capable of selecting growth and regulating doping concentration and a preparation method thereof. The preparation method comprises the following steps: growing a (100) crystal orientation lightly doped diamond layer on a (100) crystal orientation intrinsic diamond substrate; etching the upper surface of the lightly doped diamond layer to form a groove, wherein the depth of the groove is smaller than the thickness of the lightly doped diamond layer; carrying out selective growth in the groove to form a heavily doped diamond layer with (111) crystal orientation; hydrogen terminals on the upper surface of the lightly doped diamond layer and the upper surface of the heavily doped diamond layer are removed; growing an ohmic electrode on the upper surface of the heavily doped diamond layer; and a Schottky electrode grows on the upper surface of the lightly doped diamond layer, and the ohmic electrode and the Schottky electrode are arranged at an interval. According to the invention, the carrier concentration difference between the drift region and the ohmic contact region of the device can be increased to 4-5 orders of magnitude, the reverse breakdown voltage and the breakdown field strength of the Schottky diode are improved, and the leakage current is reduced.

The invention discloses a Schottky diode with a transverse structure, an in-situ sample preparation method and a processing technology. The cathode and the anode of the Schottky diode are in the same plane, the cathode ohmic contact layer is arranged on the periphery of the structure, the anode Schottky metal layer is arranged in the center of the structure, and the AlGaN barrier layer and the GaN substrate layer are sequentially arranged between the cathode ohmic contact layer and the anode Schottky metal layer. According to the in-situ sample preparation method, the FIB sample preparation technology and the selected area circuit breaking method are adopted to complete connection of the sample and the chip, the failure behavior of the device can be observed in real time under a transmission electron microscope, and the processing technology achieves effective isolation of the anode and the two-dimensional electron device through silicon oxide in the sample preparation process. Meanwhile, silicon oxide isolation can prevent short circuit of a power supply, so that a current passing path is shorter, the efficiency is higher, and the surface of a sample and a metal functional area below the sample can be effectively prevented from being damaged when ion beams are operated. The problems of low device power conversion efficiency, electrode short circuit and the like are solved.