316 results about "Schottky diode" patented technology

The utility model discloses an intrinsic safety power supply circuit and a fuel electrochemical oxygen analyzer. The intrinsic safety power supply circuit comprises a first MOS tube, a first capacitor, a second capacitor, a first resistor, a first Schottky diode, a first Zener diode and a second Zener diode, the power supply module of the fuel electrochemical oxygen analyzer comprises the intrinsic safety power supply circuit and further comprises a sensor module, an AD conversion module, a key module, a single chip microcomputer module, an analog output module and a display driving module which are connected with the power supply module, and the single chip microcomputer module is connected with the AD conversion module, the key module, the analog output module and the display driving module. The sensor module is connected with the AD conversion module, and the analog output module is connected with external equipment; the fuel electrochemical oxygen analyzer adopts the intrinsically safe power supply circuit to limit the working current and voltage in the circuit so as to control the power consumption of the whole machine, so that explosion prevention is realized, and the fuel electrochemical oxygen analyzer can measure the oxygen concentration in a flammable and explosive environment.

The invention provides a process method for improving the performance of a beta-Ga2O3 device through low-energy proton irradiation, and relates to the technical field of electronic components, and the method comprises the following steps: carrying out low-energy proton irradiation on the basis of irradiation experiment parameters at a preset environment temperature; low-energy proton irradiation with different fluence is carried out on the beta-Ga2O3 Schottky diode in a preset incidence mode to determine irradiation process data, and in combination with deep level transient spectroscopy (DLTS) analysis and device simulation, defect evolution and a hydrogen passivation mechanism caused in a beta-Ga2O3 epitaxial layer after low-energy proton incidence are revealed. According to the method, the cognitive limitation that traditional radiation must cause performance degradation of devices is broken through, and the field of low-energy proton irradiation which is not fully researched is focused.

The invention relates to the technical field of Internet of Things, in particular to a circuit for simultaneously converting UART (Universal Asynchronous Receiver / Transmitter) to multi-path different level communication, which comprises a double-USB input module, a power supply processing module, a USB-UART core conversion module and a multi-path level conversion module, the double-USB input module comprises an MINI-USB interface J6 and a USB-B interface J8, VBUS pins of the two interfaces are connected in parallel through a Schottky diode and then output to the power supply processing module, and data differential pair pins are connected in parallel and then connected to the USB-UART core conversion module; and the power supply processing module comprises an LDO (Low Dropout Regulator) voltage stabilizing chip and a filter capacitor, and is used for converting 5V voltage output by the double-USB input module into 3.3 V stable voltage. The circuit design that the UART is connected with various different levels for communication is adopted, the tool integration technology is achieved, the design that the two USB ports are connected in parallel is adopted, the compatibility of the USB data line can be effectively improved, the demands of customers are met, and the technical difficulty that one UART bus is connected with multiple USB ports is broken through.

The invention discloses a high-safety nanosecond-order delay transistor testing system and method, belongs to the field of transistor testing, and can test the characteristics of a transistor to be tested at any drain voltage stress value, drain voltage stress duration and load current based on nanosecond-order measurement delay on the basis of ensuring the safety of the testing system and experimenters. The circuit comprises switches S1, S2 and S3, resistors RA and RC, Schottky diodes D1 and D2, a power inductor L and a power supply VDD. The conduction time of the switch S1 can be controlled to control the duration of the post-stage circuit for bearing the high voltage VDD; the current value of the power inductor L at the end of charging can be controlled by controlling the conduction time of the switch S2; by testing the voltage and the current of the switch S3, the switch transient characteristic, the on-resistance characteristic and the like of the switch S3 can be obtained. Simulation and experiments prove that the measurement delay of switching to the test state after the voltage stress of the drain electrode is ended is nanosecond magnitude, and the situation of'large current connection caused by mistaken switching-on of a series switch 'does not exist, so that the circuit safety is higher.

The invention provides a high-voltage-resistant gallium oxide trench junction barrier Schottky diode. The high-voltage-resistant gallium oxide trench junction barrier Schottky diode comprises a cathode metal layer, a high-doping N-type gallium oxide substrate, a low-doping N-type gallium oxide epitaxial layer, an etching table top first dielectric layer, an etching table top second dielectric layer, a P-type nickel oxide layer, a dielectric layer and an anode metal layer which are sequentially stacked from bottom to top. According to the invention, P-type nickel oxide and gallium oxide are introduced to construct a heterostructure into a JBS structure, the JBS structure is combined with the etched trench to form a trench junction barrier Schottky diode, and the device has lower specific on-resistance, can bear higher reverse breakdown voltage, and is a gallium oxide JBS device with excellent performance.

The invention provides a chip electrostatic protection circuit and a protection method thereof.The chip electrostatic protection circuit comprises an electrostatic transmission module, a clamping module and a discharge protection module, electrostatic energy of an input port and an output port of a chip is transmitted through the electrostatic transmission module, and the clamping module is connected with the electrostatic transmission module and a power port; static energy is discharged through the clamping module, when chip control voltage is input into the chip input and output port, the clamping module is prevented from being mistakenly conducted through the discharging protection module, and on the basis of a reverse series connection structure of a diode in the static transmission module and a Schottky diode in the clamping module, the clamping module is prevented from being mistakenly conducted. And DC isolation between the input and output ports of the chip and the power port is realized. According to the protection circuit provided by the invention, the DC isolation of the chip input / output port and the power supply port is realized through the Schottky diode, the power-on time sequence requirement is avoided, and the voltage input range is expanded; in order to prevent the static discharge access from being opened mistakenly when the chip works normally, the discharge protection module controls the control voltage of the static discharge access.

A high-safety transistor testing system and method with nanosecond-level delay is disclosed, belonging to the field of transistor testing. It enables transistor characteristic testing under arbitrary drain voltage stress values, drain voltage stress durations, and load currents based on nanosecond-level measurement delays, while ensuring the safety of the testing system and personnel. The circuit includes: a switch. S 1, S 2, S 3. Resistance R A , R C Schottky diode D 1, D 2. Power Inductor L ,power supply V DD Control switch S 1. The conduction time can control the high voltage that the subsequent circuit can withstand. V DD Duration; control switch S 2. On-time can control the power inductor L Current value at the end of charging; test switch S From the voltage and current of 3, we can determine the switch. S 3. Switching transient characteristics, on-resistance characteristics, etc. Simulation and experiments show that the measurement delay of switching to the test state after the drain voltage stress ends is on the order of nanoseconds, and there is no situation of "accidental opening of series switch leading to large current conduction", so the circuit safety is higher.

The invention belongs to the field of semiconductor devices, provides a gallium nitride high-electron-mobility transistor integrated with a Schottky diode and a preparation method of the gallium nitride high-electron-mobility transistor, and aims to solve the problem that a conventional gallium nitride high-electron-mobility transistor (GaN HEMT) lacks a body diode. According to the invention, monolithic integration of the SBD and the GaN HEMT is realized through structural design, a low-impedance path is provided for reverse current, and the integration mode not only retains the original high performance characteristic of a GaN device, but also additionally endows the GaN device with reverse conduction and reverse recovery capabilities; moreover, through the structural design, the SBD can be synchronously completed on the basis of the existing GaN HEMT process, a special process or new equipment is not needed, and the cost is effectively controlled while the performance improvement is ensured; compared with an external interconnection diode scheme, parasitic inductance caused by lead bonding is eliminated, the voltage overshoot and ringing phenomena in the switching process are remarkably reduced, high-frequency switching application is facilitated, and switching loss can be greatly reduced.

The invention discloses a W-band switching line MMIC phase shifter based on an aligned CNT Schottky diode. The phase shifter comprises a substrate, a radio frequency input port, a radio frequency output port, two transmission paths with different physical lengths, a switch selection network and a direct current bias circuit. Wherein the switch selection network adopts an aligned carbon nanotube Schottky diode and is configured at the input end and the output end of the transmission path. Complementary control voltage is applied through the direct-current bias circuit, the switch selection network is driven to enable the selected paths to be conducted at the two ends at the same time and the unselected paths to be cut off at the two ends at the same time, and therefore discrete switching of phases is achieved. The high-frequency characteristic of the aligned carbon nanotube device is combined with the double-end complementary selection topology, so that the problem that the amplitude imbalance and the phase precision are difficult to consider at the W wave band is effectively solved, the signal leakage and the parasitic resonance of a non-conducted branch are remarkably inhibited, and the low-insertion-loss high-isolation low-insertion-loss high-isolation low-insertion-loss high-isolation low-insertion-loss high-isolation low-insertion-loss high-isolation low-insertion-loss high-isolation low-insertion-loss high-isolation low-insertion-loss low

The present disclosure relates to a unidirectional transient voltage suppression device, comprising: a single crystalline semiconductor substrate doped with a first conductivity type and comprising a first opposite surface and a second opposite surface; a semiconductor region doped with a second conductivity type opposite the first conductivity type extending into the substrate from the first surface; a first conductive electrode in contact with the semiconductor region on a first side; and a second conductive electrode in contact with the substrate on a second side; a first interface forming a junction of a TVS diode between the substrate and the semiconductor region; and a second interface forming a junction of a Schottky diode between the first conductive electrode and the semiconductor region or between the substrate and the second conductive electrode.

The utility model discloses a low capacitance SCR structure ESD protection device, and relates to the safety protection field, the low capacitance SCR structure ESD protection device comprises a first conduction type substrate, and the first conduction type substrate is successively arranged above the first conduction type substrate; the beneficial effects of the utility model are that the Schottky diode auxiliary trigger structure adopted by the utility model can improve the problem of local overheating caused by delayed starting response speed and current concentration of a conventional low-capacitance SCR device of a PN junction auxiliary trigger structure formed by adopting high-concentration injected N-type and P-type impurities, thereby improving the reliability of the device; due to the fact that the Schottky junction is better in high-temperature performance and current capacity, the overall size of the auxiliary trigger structure can be further compressed during design, for example, the number of stripes or the size of the stripes is reduced, and the capacitance value of the SCR protection device is further reduced in this way.

This invention discloses an automatically wake-up driving circuit for a test pen, comprising a detection module, a trigger module, a locking module, and a sampling module. The detection module includes a transistor powered by a battery via a field-effect transistor, connected to the main pen. Based on the connection state of the main pen, it outputs a detection signal. An operational amplifier acquires the detection signal and supplies it to a comparator for comparison. A Schottky diode outputs an external trigger signal. The trigger module conducts based on the external trigger signal, supplying operating current to the sampling module. The locking module maintains the conduction of the trigger module according to a power-locking signal. The sampling module samples and outputs an indicator signal. Thus, in standby mode, monitoring is maintained with minimal power consumption. When contact between the main pen and the auxiliary pen is detected, the circuit automatically conducts, generating a power-locking signal to maintain power supply. When the main pen and the auxiliary pen are disconnected, the circuit returns to standby mode. Therefore, manual power on / off is unnecessary; circuit testing can be triggered at any time, and the circuit returns to standby mode when idle, significantly reducing overall device power consumption and effectively extending device lifespan.

Disclosed are a Schottky diode and a manufacturing method thereof. The Schottky diode includes a substrate, a first semiconductor layer, a heterostructure layer, a passivation layer, and a cap layer stacked in sequence. The passivation layer includes a first groove and a second groove, and the first groove and the second groove penetrate through at least the passivation layer. A first electrode is arranged at least on the cap layer corresponding to the first groove; a second electrode is arranged in the second groove. A Schottky contact is formed between the first electrode and the cap layers, so that a direct contact area between the first electrode and the heterostructure layer may be avoided, a contradiction between the forward turn-on voltage and the reverse leakage of the Schottky diode may be balanced, and a leakage characteristic of the heterostructure layer in a high temperature environment may be suppressed.

An irradiation-resistant diamond Schottky diode and its fabrication method are disclosed. The purpose of this invention is to solve the problem of poor radiation resistance stability in Schottky diodes. In this irradiation-resistant diamond Schottky diode, p-type diodes are epitaxially grown on an intrinsic diamond substrate. + Diamond epitaxial layer, in p + An ohmic electrode is deposited in a portion of the upper surface of the diamond epitaxial layer, at p + p-type epitaxial growth is performed on the region of the diamond epitaxial layer where no ohmic electrode is deposited. ‑ Type II diamond drift layer, in p ‑ Easily oxidizable metal electrodes are deposited on a diamond drift layer, serving as Schottky electrodes. These electrodes are then terminated with oxygen. ‑ A metal oxide layer is formed between the drift layers of the diamond. This invention utilizes a low work function, easily oxidizable metal as a Schottky electrode. The low work function, easily oxidizable metal passivates the oxygen terminals on the diamond surface. The oxide layer formed on the diamond surface makes the oxygen terminals less susceptible to radiation-induced reconstruction, resulting in stronger radiation resistance.

The utility model relates to a photovoltaic grid-connected inverter circuit and electronic equipment, and belongs to the technical field of inverters, an MPPT boost circuit is connected with photovoltaic direct current, and the MPPT boost circuit comprises a boost inductor, a boost SiC MOSFET and a SiC Schottky diode; the H4 bridge inverter circuit comprises an inverter inductor and an inverter SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor); the first silicon carbide driving circuit is used for confirming the driving frequency of the boost SiC MOSFET according to the inductance value of the boost inductor; the second silicon carbide driving circuit is used for confirming the driving frequency of the inversion SiC MOSFET according to the inductance value of the inversion inductor; the silicon carbide power device is used in cooperation with a corresponding PWM modulation mode, the hardware design of the photovoltaic grid-connected inverter circuit is simplified, the size and switching loss are reduced, efficiency is improved, and EMI interference is restrained.

Title: Microelectronic Power Device The invention relates to a power device comprising: - High electron mobility transistors (T1, T2, T3) formed on an active layer (11), each transistor (T1, T2, T3) comprising a source finger (S), a drain finger (D), and a gate finger (G), - A source contact (S') common to the source fingers (S), - A drain contact (D') common to the drain fingers (D), - A gate contact (G') common to the gate fingers (G). Advantageously, at least one gate finger is not connected to the gate contact (G') and forms a Schottky contact (CS) with the active layer (11). This gate finger (CS) advantageously forms, with the adjacent drain finger (D), a Schottky diode (DS) configured to measure an operating temperature within the power device. Figure for the abstract: Fig. 2A

The invention relates to a high-heat-dissipation vertical-structure Ga2O3 Schottky diode and a preparation method thereof, and the preparation method comprises the steps: S1, obtaining a single-crystal gallium oxide substrate, preparing a highly-doped gallium oxide layer on the single-crystal gallium oxide substrate, and depositing a Schottky contact metal layer on one surface, far away from the highly-doped gallium oxide layer, of the single-crystal gallium oxide substrate; s2, obtaining a heat-conducting and electric-conducting substrate, and depositing an ohmic contact metal layer on the heat-conducting and electric-conducting substrate; s3, bonding the deposited Schottky contact metal layer in the step S1 and the ohmic contact metal layer in the step S2 to obtain a heterostructure; and S4, depositing a cathode metal layer on the highly-doped gallium oxide layer with the heterostructure to obtain the high-heat-dissipation vertical-structure Ga2O3 Schottky diode. In the technical scheme of the invention, an efficient longitudinal heat conduction path is constructed, so that heat generated during working can be quickly conducted to the heat-conducting and electric-conducting substrate from the active region through the Schottky junction and the metal bonding layer, and the thermal resistance of the device during working is reduced.

The invention relates to a manufacturing method of a trench Schottky diode with an adjustable forward voltage. A Schottky diode includes a substrate having an active region. The grooves extend into the substrate epitaxial layer, the side walls and the bottom surfaces of the grooves are lined with insulating layers, and the rest part of each groove is filled with polycrystalline silicon (polycrystalline silicon) filler. A doped region having a dopant of the same conductivity type as the semiconductor substrate is implanted in the epitaxial layer at a position between adjacent trenches. A silicide is provided at each polysilicon filler and a Schottky barrier is provided at each doped region. An anode contact of the diode contacts the silicide and the Schottky barrier, and a cathode contact of the diode contacts the lower surface of the substrate. The dopant concentration level of the selected doped region controls the setting of the forward voltage (VF) level of the Schottky diode.

The invention discloses a broadband Schottky frequency tripling circuit structure and related components, and relates to the field of signal processing. Two groups of Schottky diode strings which are reversely connected in parallel are integrated on a single radio frequency circuit substrate, and an input split-phase structure and a synthesis output structure are matched, so that independent frequency doubling and power synthesis of two paths of differential signals in a single-chip circuit are realized, the effective power capacity is improved to twice that of a traditional single-channel structure, and the output power is improved. According to the structure, while the power is improved, a complex waveguide network and a plurality of independent radio frequency circuit substrates required by a traditional multi-channel power synthesis technology are avoided, the problems of transmission loss, volume expansion and channel consistency caused by the complex waveguide network and the plurality of independent radio frequency circuit substrates are eliminated, and the unification of high power, broadband, miniaturization and high integration level is really realized.

The application discloses a terahertz mixer, comprising: a radio frequency input waveguide, a local oscillator input waveguide, a local oscillator filter and an intermediate frequency output waveguide, wherein the intermediate frequency output waveguide comprises a built-in fin line transition structure and a Schottky diode pair; one end of the fin line transition structure is connected with the radio frequency input waveguide, the other end of the fin line transition structure is connected with the local oscillator filter, the Schottky diode pair is connected with one side of the fin line transition structure and connected with an intermediate frequency output port of the intermediate frequency output waveguide; after the local oscillator signal is filtered by the local oscillator filter, the local oscillator signal is transmitted to the fin line transition structure, the radio frequency signal and the local oscillator signal are loaded into the Schottky diode pair through the fin line transition structure for frequency mixing, and the intermediate frequency signal is output through the intermediate frequency output port. In this case, the fin line transition structure simultaneously carries the radio frequency signal and the local oscillator signal, which can realize spatial superposition and power efficient injection of the signals, and has good impedance matching characteristics.

The invention discloses a low-thermal-resistance surface-mounted packaging structure of a Schottky diode. The low-thermal-resistance surface-mounted packaging structure comprises a tube base, an isolation groove is formed in one end of the tube seat, a through hole is formed in the bottom of the isolation groove, a chip seat is arranged in the isolation groove, a first electrode is arranged at the bottom of the chip seat and extends out of the bottom of the tube seat from the through hole, a chip is welded on the chip seat, and an ohmic electrode is fixedly installed at the other end of the tube seat. The bottom of the ohmic electrode is connected with a second electrode at the bottom of the tube base through an outer lead, and the top of the ohmic electrode is connected with the chip through an inner lead.

The invention discloses a large-current Schottky diode parallel structure which is used for connecting anode ends of two groups of diodes D1 and D2 in parallel to form a common anode end and comprises an input bus bar and an output bus bar, one end of the input bus bar is connected with the common anode end of the two groups of diodes D1 and D2, and the other end of the input bus bar is connected with a storage battery. The cathode end of the diode D1 or the diode D2 is connected with the output bus bar, and the output bus bar and the input bus bar are both bent L-shaped bus bars. According to the Schottky diode, a parallel use mode and diode input and output bus bar bending are adopted, it is guaranteed that the over-large current of the diode does not affect the tube voltage drop of the diode chip and the diode chip is not damaged by over-temperature, and mechanical stress and temperature stress borne by the diode chip in the use process are effectively released; and the diode chip is not damaged by environmental mechanical stress.

The embodiment of the present application provides a kind of semiconductor integrated device, including cell, the shape of the cell is positive K polygon, wherein, the value of K is 4 or 6 or 8;The diagonal of the cell divides cell into K positive triangle structure, and one positive triangle structure contains one integrated HJD MOSFET or one integrated SBD MOSFET;Integrated HJD MOSFET is n, and integrated SBD MOSFET is m;Wherein, n and m are positive integer and the sum of n and m is K.The embodiment of the present application solves the technical problem that the reliability and turn-on capability of the conventional integrated schottky diode device are limited.

The invention discloses a Schottky diode and a preparation method thereof, the Schottky diode comprises a heavily doped N-type substrate layer and a lightly doped N-type epitaxial layer formed on the upper surface of the heavily doped N-type substrate layer, the upper part of the lightly doped N-type epitaxial layer is provided with a groove structure, the groove structure is filled with doped polycrystalline silicon, the doped polycrystalline silicon is polycrystalline silicon doped with P-type impurities, and the doped polycrystalline silicon is doped with P-type impurities. Doped polycrystalline silicon is used as a solid phase diffusion source, and solid phase diffusion is carried out on the doped polycrystalline silicon to diffuse P-type impurities to the lightly doped N-type epitaxial layer, so that P-type regions are formed on the side wall and the bottom of the groove structure. According to the Schottky diode and the preparation method thereof, the P-type region is formed on the side wall and the bottom of the groove structure, the P-type region and the lightly doped N-type epitaxial layer form the depletion region, a good three-dimensional heat dissipation channel is formed, the heat dissipation burden is reduced, the P-type region is formed through solid-phase diffusion, and compared with ion implantation, the junction depth is easier to control.

The embodiment of the present application provides a kind of semiconductor device and chip, including substrate, epitaxial region on substrate, shielding area is arranged in epitaxial region, first gate structure is arranged on epitaxial region and is connected with shielding area, first gate structure is arranged on epitaxial region and is connected with shielding area and is spaced apart from first gate structure, and the trench structure between first gate structure and second gate structure and through shielding area, the part of trench structure through shielding area is filled with source electrode metal, source electrode metal and epitaxial region form schottky contact, to integrate schottky diode in semiconductor device, reduce the switching loss of semiconductor device.

The present application relates to a kind of base station direct current comprehensive management and control device, belong to communication base station direct current power supply technical field.The device includes switching power supply, metering control module, direct current magnetic latching contactor, schottky diode, main control module, 4G communication module, visual identification module, base station standby battery, OLT standby battery, camera, infrared sensor, ultrasonic sensor, mains detection module, bluetooth module and the structure of FSU.The present application not only can realize the comprehensive management and control of base station direct current, can be carried out direct current management and control to single operator direct current load, also can realize the real-time monitoring of remote mountainous area and urban public security monitoring blind spot area communication base station, easy to popularize and apply.

This application relates to integrating a FinFET and a Schottky barrier diode on a substrate. A first fin structure and a second fin structure are formed on the substrate. The first fin structure includes a channel portion extending to two pressure source portions on two opposite sides of the channel portion, and the second fin structure includes a junction portion. The source and drain structures of the FinFET are respectively formed on the two pressure source portions of the first fin structure. A source metal material, a drain metal material, and a first metal material are formed to be electrically coupled to the source structure, the drain structure, and the junction portion of the second fin structure, respectively, thereby providing a Schottky junction between the junction portion of the second fin structure and the first metal material.

The invention discloses a silicon controlled electrostatic protection device and a preparation method thereof, a metal block is arranged on the surface of a second N well and is in Schottky contact with the metal block, so that the second N well and the metal block form a Schottky diode, and an N + injection region in the second N well serves as a cathode of the silicon controlled electrostatic protection device. The P + injection region and the first N well form a PN junction diode, and the P + injection region is used as an anode of the silicon controlled electrostatic protection device, so that the PN junction diode and the Schottky diode form a trigger path of the silicon controlled electrostatic protection device, and the characteristics of low forward conduction voltage and fast conduction time and speed of the Schottky diode are utilized; the trigger voltage of the silicon controlled electrostatic protection device is effectively reduced, the failure current is improved, the latch-up effect can be effectively avoided under the ultra-low working voltage, and meanwhile the high protection level is achieved.

The application discloses an ultra-wideband odd harmonic frequency mixer for frequency spreading, and belongs to the technical field of planar harmonic frequency mixing, and comprises a first microstrip line, a Marchand balun, a first Schottky diode, a second Schottky diode, a matching circuit and a second microstrip line; the first microstrip line is located at a radio frequency input end and is connected with a non-balanced end of the Marchand balun, two balanced ends A and B of the Marchand balun are respectively connected with an anode of the first Schottky diode and a cathode of the second Schottky diode, the cathode of the first Schottky diode and the anode of the second Schottky diode are connected in sequence and are connected with the matching circuit and the second microstrip line in sequence, and the second microstrip line is connected with a local oscillator / intermediate frequency port. The harmonic frequency mixer can be directly used for frequency expansion of an existing mainstream frequency spectrometer, and the expansion range can cover the bandwidth of two to three standard waveguide frequency bands.

The utility model provides a load driving circuit based on a power electronic switch, which belongs to the technical field of load circuits and comprises an electronic switch circuit and a Schottky diode circuit, the electronic switch circuit comprises a high-side switch U17, a plurality of resistors, a BJT transistor, an NPN transistor, two freewheel diodes, a capacitor and a detection resistor, the output end of the high-side switch U17 is connected with the positive electrode of the load, and the input end of the high-side switch U17 is connected with the power supply. According to the utility model, the MCU sends out a signal according to a control requirement, the power electronic switch receives the signal and then judges whether to conduct the circuit, and when the circuit is conducted, current drives the load through the power electronic switch; when the power electronic switch is turned off, the current is subjected to follow current through the Schottky diode D43, voltage spikes and circuit damage are avoided, the Schottky diode D43 provides a follow current loop when the power electronic switch is turned off, continuity of load current is ensured, energy loss and electromagnetic interference in the circuit are reduced, and voltage spikes and circuit damage are avoided.