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2246 results about "Schottky diode" patented technology
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The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
Printable electronic display
InactiveUS6980196B1Easy to manufactureLow costElectromagnetic wave systemStatic indicating devicesMicroparticleNonlinear element
A display system includes a substrate upon which the display system is fabricated; a printable electrooptic display material, such as a microencapsulated electrophoretic suspension; electrodes (typically based on a transparent, conductive ink) arranged in an intersecting pattern to allow specific elements or regions of the display material to be addressed; insulating layers, as necessary, deposited by printing; and an array of nonlinear elements that facilitate matrix addressing. The nonlinear devices may include printed, particulate Schottky diodes, particulate PN diodes, particulate varistor material, silicon films formed by chemical reduction, or polymer semiconductor films. All elements of the display system may be deposited using a printing process.
Owner:MASSACHUSETTS INST OF TECH
Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices have a silicon carbide DMOSFET and an integral silicon carbide Schottky diode configured to at least partially bypass a built in diode of the DMOSFET. The Schottky diode may be a junction barrier Schottky diode and may have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET. The Schottky diode may have an active area less than an active area of the DMOSFET.
Owner:CREE INC
On-chip power-combining for high-power schottky diode based frequency multipliers
ActiveUS9143084B2Split evenlySemiconductor/solid-state device detailsSolid-state devicesHarmonicFrequency multiplier
A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.
Owner:CALIFORNIA INST OF TECH
Trenched-gate field effect transistors and methods of forming the same
A monolithically integrated field effect transistor and Schottky diode includes gate trenches extending into a semiconductor region. Source regions having a substantially triangular shape flank each side of the gate trenches. A contact opening extends into the semiconductor region between adjacent gate trenches. A conductor layer fills the contact opening to electrically contact: (a) the source regions along at least a portion of a slanted sidewall of each source region, and (b) the semiconductor region along a bottom portion of the contact opening, wherein the conductor layer forms a Schottky contact with the semiconductor region.
Owner:SEMICON COMPONENTS IND LLC
High-Frequency Power MESFET Boost Switching Power Supply
InactiveUS20080186004A1Lower on-resistanceLow off-state drain leakageTransistorDc-dc conversionMOSFETHigh frequency power
A MESFET based boost converter includes an N-channel MESFET connected to a node Vx. An inductor connects the node Vx to a battery or other power source. The node Vx is also connected to an output node via a Schottky diode or a second MESFET or both. A control circuit drives the MESFET (and the second MESFET) so that the inductor is alternately connected to ground and to the output node. The maximum voltage impressed across the low side MESFET is optionally clamped by a Zener diode. In some implementations, the MESFET is connected in series with a MOSFET. The MOSFET is switched off during sleep or standby modes to minimize leakage current through the MESFET. The MOSFET is therefore switched at a low frequency compared to the MESFET and does not contribute significantly to switching losses in the converter. In other implementations, more than one MESFET is connected in series with a MOSFET, the MOSFETs being switched off during periods of inactivity to suppress leakage currents.
Owner:ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED
Crosspoint resistor memory device with back-to-back Schottky diodes
InactiveUS20070015348A1Inhibit currentHigh voltageSolid-state devicesSemiconductor/solid-state device manufacturingWork functionAmorphous silicon
A metal / semiconductor / metal (MSM) back-to-back Schottky diode, a resistance memory device using the MSM diode, and associated fabrication processes are provided. The method includes: providing a substrate; forming a metal bottom electrode overlying the substrate, having a first work function; forming a semiconductor layer overlying the metal bottom electrode, having a second work function, less than the first work function; and, forming a metal top electrode overlying the semiconductor layer, having a third work function, greater than the second work function. The metal top and bottom electrodes can be materials such as Pt, Au, Ag, TiN, Ta, Ru, or TaN. In one aspect, the metal top electrode and metal bottom electrode are made from the same material and, therefore, have identical work functions. The semiconductor layer can be a material such as amorphous silicon (a:Si), polycrystalline Si, InOx, or ZnO.
Owner:SHARP LAB OF AMERICA INC
Semiconductor Device And Method For Manufacturing Same
ActiveUS20080197439A1Lower forward voltageImprove sturdinessSemiconductor/solid-state device manufacturingSemiconductor devicesEngineeringContact layer
A semiconductor device including a Schottky diode of the trench-junction-barrier type having an integrated PN diode, and a corresponding method for manufacturing the device, are provided. An n layer is provided on an nt substrate, and trenches are provided in the n layer. The trenches are provided with p-doped regions. The nt substrate and the n layer carry a contact layer.
Owner:ROBERT BOSCH GMBH
Semiconductor device
InactiveUS20030006415A1Increase flexibilityReduce in quantityTransistorSolid-state devicesMOSFETInductor
In a SiC substrate (10), a first active region (12) composed of n-type heavily doped layers (12a) and undoped layers (12b), which are alternately stacked, and a second active region (13) composed of p-type heavily doped layers (13a) and undoped layers (13b), which are alternately stacked, are provided upwardly in this order. A Schottky diode (20) and a pMOSFET (30) are provided on the first active region (12). An nMOSFET (40), a capacitor (50), and an inductor (60) are provided on the second active region (13). The Schottky diode (20) and the MOSFETs (30, 40) have a breakdown voltage characteristic and a carrier flow characteristic due to a multilayer structure composed of delta-doped layers and undoped layers and are integrated in a common substrate.
Owner:PANASONIC CORP
Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
ActiveUS20060209887A1Improve device performanceImprove switching performanceTime-division multiplexDiodeMOSFETInsulation layer
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
Owner:ALPHA & OMEGA SEMICON LTD
Non-synchronous boost converter including switched schottky diode for true disconnect
ActiveUS20060176029A1Avoid conductionTransistorEfficient power electronics conversionLDMOSControl signal
A non-synchronous boost converter includes a switched Schottky diode to rectify the switched output voltage of the boost converter where the switched Schottky diode has forward conduction blocking capability. The switched Schottky diode has an anode terminal coupled to receive the switched output voltage, a cathode terminal providing the output DC voltage, and a gate terminal coupled to receive a control signal. The control signal has a first state for turning the switched Schottky diode on where the switched Schottky diode conducts current when forward biased and a second state for turning the switched Schottky diode off where forward conduction of the switched Schottky diode is blocked even when the diode is forward biased. The switched Schottky diode can be a JFET controlled or an LDMOS gate controlled Schottky diode. Furthermore, the switched Schottky diode can be formed on-chip or off-chip of the controller circuit of the boost converter.
Owner:MICREL
Phase-Change Memory Device
A phase-change memory device has a plurality of first wiring lines WL extending in parallel to each other, a plurality of second wiring lines BL which are disposed to cross the first wiring lines WL while being separated or isolated therefrom, and memory cells MC which are disposed at respective cross points of the first wiring lines WL and the second wiring lines BL and each of which has one end connected to a first wiring line WL and the other end connected to a second wiring line BL. The memory cell MC has a variable resistive element VR which stores as information a resistance value determined due to phase change between crystalline and amorphous states thereof, and a Schottky diode SD which is connected in series to the variable resistive element VR.
Owner:KK TOSHIBA
Method concerning a junction barrier Schottky diode, such a diode and use thereof
InactiveUS6524900B2Change resistanceChange the on-state resistance of the diodeSolid-state devicesSemiconductor/solid-state device manufacturingValence bandSemiconductor materials
A method for controlling the temperature dependence of a junction barrier Schottky diode of a semiconductor material having an energy gap between the valence band and the conduction band exceeding 2 eV provides for doing this when producing the diode by adjusting the on-state resistance of the grid portion of the diode during the production for obtaining a temperature dependence of the operation of the diode adapted to the intended use thereof.
Owner:CREE INC
Silicon carbide junction barrier schottky diodes with supressed minority carrier injection
ActiveUS20060255423A1Semiconductor/solid-state device manufacturingSemiconductor devicesSchottky diodeSilicon
Integral structures that block the current conduction of the built-in PiN diode in a junction barrier Schottky (JBS) structure are provided. A Schottky diode may be incorporated in series with the PiN diode, where the Schottky diode is of opposite direction to that of the PiN diode. A series resistance or and insulating layer may be provided between the PiN diode and a Schottky contact. Silicon carbide Schottky diodes and methods of fabricating silicon carbide Schottky diodes that include a silicon carbide junction barrier region disposed within a drift region of the diode are also provided. The junction barrier region includes a first region of silicon carbide having a first doping concentration in the drift region of the diode and a second region of silicon carbide in the drift region and disposed between the first region of silicon carbide and a Schottky contact of the Schottky diode. The second region is in contact with the first region of silicon carbide and the Schottky contact. The second region of silicon carbide has a second doping concentration that is less than the first doping concentration.
Owner:CREE INC
Trenched mosfets with embedded schottky in the same cell
InactiveUS20080246082A1Overcome limitationsReduce parasitic capacitanceSemiconductor/solid-state device manufacturingDiodeMOSFETSchottky barrier
A semiconductor power device includes trenched semiconductor power device comprising a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an insulation layer covering the trenched semiconductor power device with a source-body contact trench opened therethrough the source and body regions and extending into an epitaxial layer below the body regions and filled with contact metal plug therein. The semiconductor power device further includes an embedded Schottky diode disposed near a bottom of the source-body contact trench below the contact metal plug wherein the Schottky diode further includes a Schottky barrier layer having a barrier height for reducing a leakage current through the embedded Schottky diode during a reverse bias between the drain and the source.
Owner:FORCE MOS TECH CO LTD
Enhancement mode III-nitride switch with increased efficiency and operating frequency
ActiveUS20090278513A1Improve efficiencyIncrease operating frequencyTransistorSolid-state devicesSchottky diodeNitride
According to one exemplary embodiment, an efficient and high speed E-mode III-N / Schottky switch includes a silicon transistor coupled with a D-mode III-nitride device, where the silicon transistor causes the D-mode III-nitride device to operate in an enhancement mode. The E-mode III-N / Schottky switch further includes a Schottky diode coupled across the silicon transistor so as to improve efficiency, recovery time, and speed of the E-mode III-N / Schottky switch. An anode of the Schottky diode can be coupled to a source of the silicon transistor and a cathode of the Schottky diode can be coupled to a drain of the silicon transistor. The Schottky diode can be integrated with the silicon transistor. In one embodiment the III-nitride device is a GaN device.
Owner:INFINEON TECH AMERICAS CORP
Monolithic integrated circuit of a field-effect semiconductor device and a diode
InactiveUS20070228477A1Flow assuranceEasy to FeedbackTransistorSolid-state devicesMESFETField effect
A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.
Owner:SANKEN ELECTRIC CO LTD
One transistor dram cell structure and method for forming
ActiveUS20080099808A1Simple and compact designGuaranteed uptimeTransistorSolid-state devicesSchottky diodeBody region
A one-transistor dynamic random access memory (DRAM) cell includes a transistor which has a first source / drain region, a second source / drain region, a body region between the first and second source / drain regions, and a gate over the body region. The first source / drain region includes a Schottky diode junction with the body region and the second source / drain region includes an n-p diode junction with the body region.
Owner:NXP USA INC
JFET controlled schottky barrier diode
A JFET controlled Schottky barrier diode includes a p-type diffusion region integrated into the cathode of the Schottky diode to form an integrated JFET where the integrated JFET provides on-off control of the Schottky barrier diode. The p-type diffusion region encloses a portion of the forward current path of the Schottky barrier diode where the p-type diffusion region forms the gate of the JFET and the enclosed portion of the forward current path forms the channel region of the JFET. By applying a reverse biased potential to the gate of the JEFT with respect to the anode of the Schottky diode, the forward current of the Schottky diode can be pinched off, thereby providing on-off control over the Schottky diode forward current.
Owner:MICREL
Integrated FET and schottky device
InactiveUS6987305B2Reduce power lossMore compactTransistorAcceleration measurement using interia forcesMOSFETSchottky diode
A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die.
Owner:INFINEON TECH AMERICAS CORP
Baseband signal converter for a wideband impulse radio receiver
InactiveUS6937663B2Amplitude-modulated carrier systemsAmplitude demodulationBroadband pulseCapacitance
Owner:ALEREON
Schottky diode having overcurrent protection and low reverse current
ActiveUS6861723B2Good resistance to overcurrentsLower forward voltageTransistorReverse currentEngineering
The invention relates to a Schottky diode in which p-doped regions (4, 5) are incorporated in the Schottky contact area. At least one (5) of these regions (4, 5) has a greater minimum extent, in order to initiate a starting current.
Owner:INFINEON TECH AG
Lateral conduction Schottky diode with plural mesas
ActiveUS7084475B2Reduce heat buildupSolid-state devicesSemiconductor/solid-state device manufacturingPath lengthOhmic contact
A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissertation and reduces heat generation.
Owner:POWER INTEGRATIONS INC
Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
ActiveUS20090072301A1Improve switching performanceImprove area efficiencySolid-state devicesSemiconductor/solid-state device manufacturingMOSFETInsulation layer
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
Owner:ALPHA & OMEGA SEMICON LTD
Wide band gap semiconductor device and method for producing the same
ActiveUS20090283776A1Lower on-resistanceShort reverse recovery timeSemiconductor/solid-state device manufacturingDiodeBroadbandWide band
A wide band gap semiconductor device is disclosed. A first trench in a gate electrode part and a second trench in a source electrode part (Schottky diode part) are disposed so that the first and second trenches are close to each other while and the second trench is deeper than the first trench. A metal electrode is formed in the second trench to form a Schottky junction on a surface of an n-type drift layer in the bottom of the second trench. Further, a p+-type region is provided in part of the built-in Schottky diode part being in contact with the surface of the n-type drift layer, preferably in the bottom of the second trench. The result is a wide band gap semiconductor device which is small in size and low in on-resistance and loss, and in which electric field concentration applied on a gate insulating film is relaxed to suppress lowering of withstand voltage to thereby increase avalanche breakdown tolerance at turning-off time.
Owner:FUJI ELECTRIC CO LTD
Method of forming trench gate field effect transistor with recessed mesas
A monolithically integrated field effect transistor and Schottky diode includes gate trenches extending into a semiconductor region. Source regions having a substantially triangular shape flank each side of the gate trenches. A contact opening extends into the semiconductor region between adjacent gate trenches. A conductor layer fills the contact opening to electrically contact: (a) the source regions along at least a portion of a slanted sidewall of each source region, and (b) the semiconductor region along a bottom portion of the contact opening, wherein the conductor layer forms a Schottky contact with the semiconductor region.
Owner:SEMICON COMPONENTS IND LLC
Metal/semiconductor/metal (MSM) back-to-back Schottky diode
ActiveUS20070015330A1Inhibit currentHigh voltageSolid-state devicesSemiconductor/solid-state device manufacturingGas phaseEngineering
A method is provided for forming a metal / semiconductor / metal (MSM) back-to-back Schottky diode from a silicon (Si) semiconductor. The method deposits a Si semiconductor layer between a bottom electrode and a top electrode, and forms a MSM diode having a threshold voltage, breakdown voltage, and on / off current ratio. The method is able to modify the threshold voltage, breakdown voltage, and on / off current ratio of the MSM diode in response to controlling the Si semiconductor layer thickness. Generally, both the threshold and breakdown voltage are increased in response to increasing the Si thickness. With respect to the on / off current ratio, there is an optimal thickness. The method is able to form an amorphous Si (a-Si) and polycrystalline Si (polySi) semiconductor layer using either chemical vapor deposition (CVD) or DC sputtering. The Si semiconductor can be doped with a Group V donor material, which decreases the threshold voltage and increases the breakdown voltage.
Owner:XENOGENIC DEV LLC
Baseband signal converter for a wideband impulse radio receiver
InactiveUS20020126769A1Stable outputAmplitude-modulated carrier systemsAmplitude demodulationBroadband pulseSoftware engineering
A baseband signal converter device for an impulse radio receiver combines multiple converter circuits and an RF amplifier in a single integrated circuit package. Each converter circuit includes an integrator circuit that integrates a portion of each RF pulse during a sampling period triggered by a timing pulse generator. The integrator capacitor is isolated by a pair of Schottky diodes connected to a pair of load resistors. A current equalizer circuit equalizes the current flowing through the load resistors when the integrator is not sampling. Current steering logic transfers load current between the diodes and a constant bias circuit depending on whether a sampling pulse is present.
Owner:ALEREON
Schottky Diodes Having Low-Voltage and High-Concentration Rings
ActiveUS20090294865A1Improve breakdown voltageReduce leakage currentTransistorSolid-state devicesHigh concentrationSchottky barrier
An integrated circuit structure includes a semiconductor substrate; a first well region of a first conductivity type over the semiconductor substrate; a second well region of a second conductivity type opposite the first conductivity type encircling the first well region; and a metal-containing layer over and adjoining the first well region and extending over at least an inner portion of the second well region. The metal-containing layer and the first well region form a Schottky barrier. The integrated circuit structure further includes an isolation region encircling the metal-containing layer; and a third well region of the second conductivity type encircling at least a central portion of the first well region. The third well region has a higher impurity concentration than the second well region, and includes a top surface adjoining the metal-containing layer, and a bottom surface higher than bottom surfaces of the first and the second well regions.
Owner:TAIWAN SEMICON MFG CO LTD
Method for producing a schottky diode in silicon carbide
InactiveUS6897133B2Semiconductor/solid-state device manufacturingSemiconductor devicesSchottky barrierCarbide
The invention concerns a method for making a vertical Schottky diode on a highly doped N-type silicon carbide substrate (1), comprising steps which consist in forming an N-type lightly doped epitaxial layer (2); etching out a peripheral trench at the active zone of the diode; forming a type P doped epitaxial layer; carrying out a planarization process so that a ring (6) of the P type epitaxial layer remains in the trench; forming an insulating layer (3) on the outer periphery of the component, said insulating layer partly covering said ring; and depositing a metal (4) capable of forming a Schottky barrier with the N type epitaxial layer.
Owner:STMICROELECTRONICS SRL
High density trench FET with integrated Schottky diode and method of manufacture
A monolithically integrated trench FET and Schottky diode includes a pair of trenches terminating in a first silicon region of first conductivity type. Two body regions of a second conductivity type separated by a second silicon region of the first conductivity type are located between the pair of trenches. A source region of the first conductivity type is located over each body region. A contact opening extends between the pair of trenches to a depth below the source regions. An interconnect layer fills the contact opening so as to electrically contact the source regions and the second silicon region. Where the interconnect layer electrically contacts the second silicon region, a Schottky contact is formed.
Owner:SEMICON COMPONENTS IND LLC
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