88 results about "Active zone" patented technology

A method for the assessment of neuromuscular function by motor unit number estimation, comprising: (i) determining and controlling stimulation and data acquisition process via pre-configured electrode array so as to acquire stable and less uncertainty MU responses; (ii) pre-processing acquired MUs responses so as to attenuate noise, determine MUs activity region, and improve processing speed and accuracy; (iii) minimizing alternation effects by globally searching and comparing SMUPs; (iv) eliminating alternation effects by identifying alternating MUs directly; and (v) computing and reporting MUNE results, as well as the statistical description of these MUN estimates to evaluate its robustness.

A test element and method for detecting an analyte with the aid thereof is provided. The test element is essentially disk-shaped and flat, and can be rotated about a preferably central axis which is perpendicular to the plane of the disk-shaped test element. The test element has a sample application opening for applying a liquid sample, a capillary-active zone, in particular a porous, absorbent matrix, having a first end that is remote from the axis and a second end that is near to the axis, and a sample channel which extends from an area near to the axis to the first end of the capillary-active zone that is remote from the axis.

A reflector antenna system may include an arc-shaped antenna reflector defining a first antenna beam, and a phased array antenna positioned in the first antenna beam including first and second arrays of antenna elements coupled together in back-to-back relation. The first array may face the antenna reflector, and the second array may face away from it. A controller switchable between a reflecting mode and a direct mode may be connected to the arrays. The controller, when in the reflecting mode, may cause back-to-back pairs of first antenna elements from the arrays to define a feed-through zone for the first antenna beam, and cause second antenna elements in the first array to define a first active zone for the first antenna beam. Furthermore, when in the direct mode, the controller may cause antenna elements in the second array to define a second active zone for a second antenna beam.

A man-machine interface method comprising generating physical interactions with active zones (10) belonging to an interface object (5), the active zones being associated with predetermined items of information, detecting the active zones where interactions occur by measuring at least one physical magnitude, and associating each detected interaction with the corresponding predetermined item of information. The active zones are defined for a predetermined finite length of time and they are then deactivated at the end of said predetermined length of time, and when interactions with the interface object are detected while the active zones are deactivated, the active zones are automatically redefined as a function of the first detected interactions.

The present invention discloses a one-time programmable memory, an electric system, an electric fuse memory, a programmable resistance assembly memory and a method thereof, wherein the programmable resistance assembly memory comprising a plurality of programmable resistance memory units, the programmable resistance assembly is coupled to a first power supply voltage line; and a diode comprising at least a first active zone and a second active zone, wherein the first active zone is provided with a first type of doping, the second active zone is provided with a second type of doping, the first active zone provides a first end of the diode, the second active zone provides a second end of the diode, the first active zone and the second active zone are all located in a same hole, the first active zone is coupled to the programmable resistance assembly, and the second active zone is coupled to a second power supply voltage line. The first and second active zones are manufactured from the source electrode or the drain electrode of a complementary metal oxide semiconductor CMOS assembly, and the programmable resistance assembly is programmed through applying a voltage to the first and second power supply lines.

The semiconductor memory device includes an electrically erasable programmable non-volatile memory cell having a single layer of gate material and including a floating-gate transistor and a control gate. The source, drain and channel regions of the floating-gate transistor form the control gate. Moreover, the memory cell includes a dielectric zone lying between a first part of the layer of gate material and a first semiconductor active zone electrically isolated from a second active zone incorporating the control gate. This dielectric zone then forms a tunnel zone for transferring, during erasure of the cell, the charges stored in the floating gate to the first active zone.

An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam (10) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part (12), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part (12) of the beam is separated from the active zone (ZA) and from the control electrode (E).

The component has a functional semiconductor area (2) with an active zone (400) and a lateral principal direction of extension. The area is provided with a breakthrough in the active zone. A connecting conductor material (8) is electrically isolated from the active zone in a subarea of the breakthrough and is arranged in a region of the breakthrough. The breakthrough is partially covered by an insulating material (10). - Independent claims are also included for the following: - (A) a device with optoelectronic components - (B) a method for manufacturing an optoelectronic component.

Disclosed is a pressure sensor comprising sensor layers ( 12, 14 ) which are made of an elastic, resistive material and are applied to a polymer film that is not represented. ( 22 ) embodies a spacer that is coated with an adhesive. One sensor layer ( 14 ) is provided with a microstructured surface encompassing spherical structures ( 20 ) within an active zone ( 16 ). The compression path amounts to 10 micrometers at an extension R of the structures of 50 micrometers. The structures ( 20 ) are large compared with a certain surface roughness. The inventive pressure sensor is produced by injection molding, etching, embossing, or by means of an electron beam technique or laser beam technique. Disclosed are variations thereof, which function differently.

The field of the invention is that of integrated optical emission devices comprising a laser emission section and a section for modulating the optical power emitted by the laser, also known as ILM devices, the acronym standing for Integrated Laser Modulator. The invention is aimed at an ILM device comprising a laser section (1) and a modulation section (2) such as electro absorption modulator, formed in a PIN type common structure, where the structure successively comprises a substrate (10) in n doped semiconductor material, buried active zone (11) and p doped vertical confinement layer (16) and a semi-insulating lateral confinement layer (15). The laser section has a blocking layer (17) in n doped semiconductor material disposed between the semi-insulating lateral confinement layer and vertical confinement layers. The performance and the reliability of the final device is thus improved.

In a process for producing a semiconductor light emitting device, first, a lamination including an active zone, cladding layers, and a current confinement layer is formed. Then, a near-edge portion of the lamination having a stripe width is removed so as to produce a first space, and a second near-edge portion located under the first space and a stripe portion of the lamination being located inside the first space and having the stripe width are concurrently removed so that a second space is produced, and cross sections of the active layer and the current confinement layer are exposed in the second space. Finally, the first and second spaces are filled with a regrowth layer so that a dopant to the regrowth layer is diffused into a near-edge region of the remaining portion of the active layer.

By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.

The severing machine comprises at least a first series of disk-shaped blades (23A; 23B) rotating about their own axis, which series is carried by a moveable support (21) capable of bringing the series of blades alternately into an active zone wherein the cutting of the products takes place and a parking zone. In addition, at least one barrier (41, 43) is provided separating the active zone from the parking zone.

The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction of propagation of the light. Generally, integrated optical isolators of this type fulfill two functions. On the one hand, they comprise a magneto-optical layer ensuring the non-reciprocal effect and on the other hand an active zone ensuring the amplification of the laser beam, the injection of the charge carriers into the active zone being ensured by an electrical contact layer. The invention proposes, so as to limit the disturbing effects of the contact layer on the propagation of the laser beam, that the contact layer be eliminated above the active zone and that the injection of the charge carriers be ensured via the lateral faces and the edges of the upper face of the active zone.

Band-edge aligned carrier blocking layers are introduced into wurtzite or zinc blend Gallium Nitride based diode laser and LEDs in order to prevent thermionic emission and the overflow of carriers at elevated operating temperatures. These blocking layers are located in the direct vicinity of the active zone of the light emitter, and are designed with material composition such that one of the band-edges of the layers is, either partially or fully, aligned with that of adjacent barrier or waveguide layer. This invention proposes GaN based QW structure with a AlGaN(AsPSb) electron-blocking layer on the p-side of quantum well and (InGa)AlN as hole-blocking layer.