89 results about "Active zone" patented technology

A method for the assessment of neuromuscular function by motor unit number estimation, comprising: (i) determining and controlling stimulation and data acquisition process via pre-configured electrode array so as to acquire stable and less uncertainty MU responses; (ii) pre-processing acquired MUs responses so as to attenuate noise, determine MUs activity region, and improve processing speed and accuracy; (iii) minimizing alternation effects by globally searching and comparing SMUPs; (iv) eliminating alternation effects by identifying alternating MUs directly; and (v) computing and reporting MUNE results, as well as the statistical description of these MUN estimates to evaluate its robustness.

A device (10, 50, 60, 70, 80, 90) is used to apply an electric pulse or spike to a patient to treat the patient. The device can have a series of preset treatments programmed therein. A user can select a treatment from menus displayed on a display (100). The impedance of the skin and underlying tissue to be treated can be measured prior to the treatment to locate active areas on the skin for treatment. The impedance measurement can be made at a sufficiently low level to avoid treatment of the patient that could cause a change in the impedance. A phase detector can be used to isolate the capacitance value in the impedance. The charge delivered to the patient can be measured and the device can adjust the charge as the skin impedance varies during treatment to deliver uniform charges to the skin. A variety of probes can be used with the device, with the device automatically detecting the type of probe attached. Multiple electrodes can be used on the probe, which allows the active areas in contact with the probe to be identified prior to treatment to allow the treatment to concentrate on the active areas.

A test element and method for detecting an analyte with the aid thereof is provided. The test element is essentially disk-shaped and flat, and can be rotated about a preferably central axis which is perpendicular to the plane of the disk-shaped test element. The test element has a sample application opening for applying a liquid sample, a capillary-active zone, in particular a porous, absorbent matrix, having a first end that is remote from the axis and a second end that is near to the axis, and a sample channel which extends from an area near to the axis to the first end of the capillary-active zone that is remote from the axis.

A method for changing zoning in a fiber channel fabric is provided. The method includes receiving zone date from a management module, wherein the zone data is received by a fiber channel switch; waiting for active Zone Set; and sending a merge request to neighboring switches. The method also includes, sending Zone Merge Data Start message to the management module; sending new zone data to management module; and comparing the new zone data with current zone data. The method also includes creating acceptance message for new zoning, wherein the management module creates the acceptance message.

A reflector antenna system may include an arc-shaped antenna reflector defining a first antenna beam, and a phased array antenna positioned in the first antenna beam including first and second arrays of antenna elements coupled together in back-to-back relation. The first array may face the antenna reflector, and the second array may face away from it. A controller switchable between a reflecting mode and a direct mode may be connected to the arrays. The controller, when in the reflecting mode, may cause back-to-back pairs of first antenna elements from the arrays to define a feed-through zone for the first antenna beam, and cause second antenna elements in the first array to define a first active zone for the first antenna beam. Furthermore, when in the direct mode, the controller may cause antenna elements in the second array to define a second active zone for a second antenna beam.

A man-machine interface method comprising generating physical interactions with active zones (10) belonging to an interface object (5), the active zones being associated with predetermined items of information, detecting the active zones where interactions occur by measuring at least one physical magnitude, and associating each detected interaction with the corresponding predetermined item of information. The active zones are defined for a predetermined finite length of time and they are then deactivated at the end of said predetermined length of time, and when interactions with the interface object are detected while the active zones are deactivated, the active zones are automatically redefined as a function of the first detected interactions.

The invention relates to an installation for implementing a method for detecting a deposit (D) that might form inside a fluid transport pipe (2). According to the invention, the installation comprises:at least one production source (3) for producing a thermal gradient, the source being for mounting on an “active” zone (Za) of the outside surface of the pipe;at least one measurement sensor (7) for measuring heat flux, the sensor being for mounting on a zone (Zm) of the outside surface of the pipe situated relative to the active zone at a given distance in consideration of the length of the pipe; andcontrol and monitoring means (5) connected to the production source (3) and to the measurement sensor (7), and adapted to detect when the heat flux corresponding at least in part to the applied thermal gradient and transmitted by the pipe exceeds a determined threshold indicative of the presence of a deposit inside the pipe.

In order to improve the fill factor as well as the efficiency for a structural element on the basis of an organic light-emitting diode facility, a display is proposed comprising a substrate, a first electrode (130) nearest to the substrate, a second electrode (160) away from the substrate and at least one light-emitting organic layer (150) arranged between both electrodes. The light emitted in the active zone transmits through one of the two electrodes whereby the first electrode is pixel-structured and an isolation layer (150) is arranged between neighbouring pixels. The display according to the invention is characterized in that the isolation layer (150) is optically coupled with the light-emitting layer (150), and has optically effective light-scattering and fill factor increasing heterogeneities (180, 190), whereby the isolation layer is micro-structured to match the pixel structure of the first electrode and is processed onto this.In addition, the invention concerns also a method for the manufacture of such a display.

An active non-lethal infrasound system for denying all bird species access to critical areas, particularly in areas around aircraft and other high value systems. The system comprises a plurality of infrasound generators broadcasting continuous infrasonic signals to create a bird-free infrasound active zone within the perimeters of the protected critical area and an infrasound-free dead zones for birds being denied access to the critical areas. Further, an active infrasonic barrier is assembled within an exclusion area surrounding the bird-free infrasound active zone to dampen all low frequency sound waves emanating from the critical area and its perimeters. Wherever the situation allows, a wildlife sanctuary is preferably established further from the exclusion area to attract and protect birds, enforced by broadcasting infrasound signals that simulate natural sounds that attract species typical of the geographic location.

By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.

A method is provided for fabricating transistors of first and second types in a single substrate. First and second active zones of the substrate are delimited by lateral isolation trench regions, and a portion of the second active zone is removed so that the second active zone is below the first active zone. First and second layers of semiconductor material are formed on the second active zone, so that the second layer is substantially in the same plane as the first active zone. Insulated gates are produced on the first active zone and the second layer. At least one isolation trench region is selectively removed, and the first layer is selectively removed so as to form a tunnel under the second layer. The tunnel is filled with a dielectric material to insulate the second layer from the second active zone of the substrate. Also provided is such an integrated circuit.

The present invention discloses a one-time programmable memory, an electric system, an electric fuse memory, a programmable resistance assembly memory and a method thereof, wherein the programmable resistance assembly memory comprising a plurality of programmable resistance memory units, the programmable resistance assembly is coupled to a first power supply voltage line; and a diode comprising at least a first active zone and a second active zone, wherein the first active zone is provided with a first type of doping, the second active zone is provided with a second type of doping, the first active zone provides a first end of the diode, the second active zone provides a second end of the diode, the first active zone and the second active zone are all located in a same hole, the first active zone is coupled to the programmable resistance assembly, and the second active zone is coupled to a second power supply voltage line. The first and second active zones are manufactured from the source electrode or the drain electrode of a complementary metal oxide semiconductor CMOS assembly, and the programmable resistance assembly is programmed through applying a voltage to the first and second power supply lines.

Displayed on a first LCD 11 are a “fire” planet 40a, a “wood” planet 40b; an “earth” planet 40c, a “wind” planet 40d and a “water” planet 40e,each traveling along an orbit by a unique orbital period. While an attribute symbol is traveling through an active zone that is associated with the attribute symbol, the status of the attribute represented by the attribute symbol is active. An attribute being active affects the space attribute, which is the attribute of a particular space in the game world. The space attribute affects the ability parameters of characters of the same attribute. Thus, it is possible to enrich the strategic aspect of a video game using characters' attributes.

The field of the invention is that of photodetectors (10), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for Quantum Well Infrared Photodetector. It is an object of the invention to increase the detectivity of the detectors by significantly reducing the surface area of the detection zone while conserving the incident flux. This result is obtained by arranging a structure (4) or grating on the active zone (31) of the photodetector (10), which couples the incident wave and confines it on the active zone (31). The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect.

The device has a case (15) circulated with air to be heated and delimiting a heat space that comprises of electrical heating modules (14). Each heating module has two metallic ribbons and resistive units with positive temperature coefficient. The case has supply compartments (20) for housing supply modules (200). The supply compartments constitute an active zone in the delimited heat space. - Independent claims are also included for the following: - (a) a heating and conditioning apparatus including a heating device for motor vehicle - (b) a method of mounting a heating device.

An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam (10) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part (12), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part (12) of the beam is separated from the active zone (ZA) and from the control electrode (E).

The component has a functional semiconductor area (2) with an active zone (400) and a lateral principal direction of extension. The area is provided with a breakthrough in the active zone. A connecting conductor material (8) is electrically isolated from the active zone in a subarea of the breakthrough and is arranged in a region of the breakthrough. The breakthrough is partially covered by an insulating material (10). - Independent claims are also included for the following: - (A) a device with optoelectronic components - (B) a method for manufacturing an optoelectronic component.

Disclosed is a pressure sensor comprising sensor layers ( 12, 14 ) which are made of an elastic, resistive material and are applied to a polymer film that is not represented. ( 22 ) embodies a spacer that is coated with an adhesive. One sensor layer ( 14 ) is provided with a microstructured surface encompassing spherical structures ( 20 ) within an active zone ( 16 ). The compression path amounts to 10 micrometers at an extension R of the structures of 50 micrometers. The structures ( 20 ) are large compared with a certain surface roughness. The inventive pressure sensor is produced by injection molding, etching, embossing, or by means of an electron beam technique or laser beam technique. Disclosed are variations thereof, which function differently.

In a process for producing a semiconductor light emitting device, first, a lamination including an active zone, cladding layers, and a current confinement layer is formed. Then, a near-edge portion of the lamination having a stripe width is removed so as to produce a first space, and a second near-edge portion located under the first space and a stripe portion of the lamination being located inside the first space and having the stripe width are concurrently removed so that a second space is produced, and cross sections of the active layer and the current confinement layer are exposed in the second space. Finally, the first and second spaces are filled with a regrowth layer so that a dopant to the regrowth layer is diffused into a near-edge region of the remaining portion of the active layer.

Solid body for the production of solid-state lasers, the solid body having, at least in an optically used area, monoclinic elementary cells based on the same crystallographic system of coordinates, and having in the optically used area at least two domains with different chemical compositions, the optically used area having at least one active zone and at least one non-active zone. At least in the optically used area, at least one of tungstenate, potassium, and rubidium may be a constituent of the monoclinic elementary cells. At least in the optically used area, at least one of Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu may be a constituent of the monoclinic elementary cells. Solid body is suited for a device for generating coherent electromagnetic radiation, such as a laser beam. The solid body may be used as a disk or chip laser.

By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.

The severing machine comprises at least a first series of disk-shaped blades (23A; 23B) rotating about their own axis, which series is carried by a moveable support (21) capable of bringing the series of blades alternately into an active zone wherein the cutting of the products takes place and a parking zone. In addition, at least one barrier (41, 43) is provided separating the active zone from the parking zone.

The invention discloses a fuel cell electrode structure and a preparation method thereof. The electrode structure comprises an active zone and a frame zone arranged around the active zone, wherein the active zone comprises a proton exchange membrane, catalysis layers and porous diffusion layers; the catalysis layers are respectively positioned on two sides of the proton exchange membrane; two sides of the catalysis layers are respectively pressed with the porous diffusion layers; the frame zone comprises a zone where the proton exchange membrane extends out of the edges of the catalysis layers and a fiber-reinforced composite material is clamped on the two sides, extending out of the edges of the catalysis layers, of the proton exchange membrane; the frame zone is thinner than the active zone. The invention further provides the preparation method of the electrode structure. Through adoption of the electrode structure and the preparation method, not only can the cell sealing problem be solved, but also the cell sealing reliability can be improved and the additional weight can be reduced; the cell service life is prolonged, the operation is simple, and the production efficiency is high.

A data storage system is provided with a storage domain having an active zone subportion of storage space, and a command queue controller configured for short-stroking an actuator directed to the active zone. A method is provided for virtualizing a storage space to store user data in a first domain and redundant data in a second domain, partitioning each of the domains into active and inactive subportion storage zones, and executing a retrieve access command from one of the first and second domains depending on which domain's active zone contains an LBA associated with the retrieve access command.

In a method for the manufacture of an active matrix for an electro-optical display device, the active zone exposure fields CH1, CH2 are obtained by the transfer of an active zone mask in such a way that there is a non-null overlap zone zl, zr, zt, zb between two successive exposure fields. The active zone mask is exposed a first time. This mask is positioned for the next exposure so as to overlap the first exposed field on a certain width F1, F2. In the overlap zones, an exposure of the mask provides only a part of the patterns.

The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction of propagation of the light. Generally, integrated optical isolators of this type fulfill two functions. On the one hand, they comprise a magneto-optical layer ensuring the non-reciprocal effect and on the other hand an active zone ensuring the amplification of the laser beam, the injection of the charge carriers into the active zone being ensured by an electrical contact layer. The invention proposes, so as to limit the disturbing effects of the contact layer on the propagation of the laser beam, that the contact layer be eliminated above the active zone and that the injection of the charge carriers be ensured via the lateral faces and the edges of the upper face of the active zone.

A method for quickly determining mine microseismic active zone includes the following steps of: a. establishing a three-dimensional system of coordinate in a mining area to be measured with all points in the mining area having positive value in the system; b. dividing the mining area into a plurality of cuboid cells, wherein each cell has only one definite code in the system; c. recording each time of microseism according to the code of the cell in which the microseismic point is and determining the cell as an active unit; and d. comparing the codes of all active units, and if the codes of two or more active units are adjacent to each other, subsequently determining the area corresponding to the active units as a microseismic active zone. Through the division of cells, the method establishes the relation between the cells and the microseismic points and can determine whether the active units are adjacent to each other through simple comparison, thus being capable of quickly determining the microseismic active zone. The method greatly shortens the time for determining active zones and offers a sound guarantee for safe production of mines.