89 results about "Active zone" patented technology

A test element and method for detecting an analyte with the aid thereof is provided. The test element is essentially disk-shaped and flat, and can be rotated about a preferably central axis which is perpendicular to the plane of the disk-shaped test element. The test element has a sample application opening for applying a liquid sample, a capillary-active zone, in particular a porous, absorbent matrix, having a first end that is remote from the axis and a second end that is near to the axis, and a sample channel which extends from an area near to the axis to the first end of the capillary-active zone that is remote from the axis.

The present invention discloses a one-time programmable memory, an electric system, an electric fuse memory, a programmable resistance assembly memory and a method thereof, wherein the programmable resistance assembly memory comprising a plurality of programmable resistance memory units, the programmable resistance assembly is coupled to a first power supply voltage line; and a diode comprising at least a first active zone and a second active zone, wherein the first active zone is provided with a first type of doping, the second active zone is provided with a second type of doping, the first active zone provides a first end of the diode, the second active zone provides a second end of the diode, the first active zone and the second active zone are all located in a same hole, the first active zone is coupled to the programmable resistance assembly, and the second active zone is coupled to a second power supply voltage line. The first and second active zones are manufactured from the source electrode or the drain electrode of a complementary metal oxide semiconductor CMOS assembly, and the programmable resistance assembly is programmed through applying a voltage to the first and second power supply lines.

The semiconductor memory device includes an electrically erasable programmable non-volatile memory cell having a single layer of gate material and including a floating-gate transistor and a control gate. The source, drain and channel regions of the floating-gate transistor form the control gate. Moreover, the memory cell includes a dielectric zone lying between a first part of the layer of gate material and a first semiconductor active zone electrically isolated from a second active zone incorporating the control gate. This dielectric zone then forms a tunnel zone for transferring, during erasure of the cell, the charges stored in the floating gate to the first active zone.

The field of the invention is that of integrated optical emission devices comprising a laser emission section and a section for modulating the optical power emitted by the laser, also known as ILM devices, the acronym standing for Integrated Laser Modulator. The invention is aimed at an ILM device comprising a laser section (1) and a modulation section (2) such as electro absorption modulator, formed in a PIN type common structure, where the structure successively comprises a substrate (10) in n doped semiconductor material, buried active zone (11) and p doped vertical confinement layer (16) and a semi-insulating lateral confinement layer (15). The laser section has a blocking layer (17) in n doped semiconductor material disposed between the semi-insulating lateral confinement layer and vertical confinement layers. The performance and the reliability of the final device is thus improved.