The invention relates to the technical field of
semiconductor product preparation, in particular to a total-reflection binary
photomask and a pattern transfer method.The total-reflection binary
photomask comprises a transparent substrate, an
optical layer is arranged on one side of the transparent substrate, a light incidence
prism is attached to the other side of the transparent substrate, and optical patterns are processed on the
optical layer through an
etching technology; the light receiving surface of the incident
prism is perpendicular to the direction of the
light source and enables the
light source to be transmitted to the
optical layer at an incident
angle alpha, and the optical layer enables incident light with the incident
angle alpha to be totally reflected; different from a traditional
photomask with a multi-layer stacked structure, the photomask has the advantages that only one optical layer needs to be arranged, and the uniformity and the precision of etched patterns can be effectively guaranteed; through total reflection of the optical layer, penetrating light is avoided, and the
optical contrast of the photomask in use is guaranteed; the
light source irradiates on the optical layer at a certain angle, and compared with a traditional mode that the light source vertically irradiates on the optical layer, the pattern on the optical layer can be recorded on the
wafer in a shrunk mode when pattern information is transferred.