26results about How to "Increase optical power" patented technology

The utility model relates to the technical field of light feeding devices, in particular to an eye-closed three-dimensional light feeding LED device, which is characterized in that a pupil LED chip group comprises a red light chip and a near-infrared light chip with the wavelength range of 625nm to 960nm; a pupil LED chip set, an eyelash LED chip set and a meibomian gland LED chip set are fixedly installed on the pupil aluminum substrate, and forced eye closing distance control hair is arranged on the pupil aluminum substrate. A lens aluminum substrate and an eyebrow acupoint aluminum substrate are mounted on the lens seat; the system further comprises an integrated control circuit. By using the red light chip, the optical power density comparable to that of laser and the effective irradiation area larger than that of the laser can be obtained, and the alignment precision of a light source to acupuncture points is reduced; by utilizing the blood activating function of dark red and near-infrared light, myopia, eyebrow thickening and eyelash thickening can be prevented and controlled; health care can be carried out on meibomian glands and a suspension tough system, and light stimulation can be carried out on eye protection acupuncture points; all-directional three-dimensional light feeding can be realized anytime and anywhere; the safety values under various limit conditions refer to three kinds of sunlight.

The GaN-based compound semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and an electron spin state regulation and control layer is arranged between the lower limiting layer and the lower waveguide layer. And designing piezoelectric polarization coefficient distribution of a first electron spin state regulation layer and a second electron spin state regulation layer in the electron spin state regulation layer, and a relation of piezoelectric polarization coefficients among the lower limiting layer, the lower waveguide layer, the first electron spin state regulation layer and the second electron spin state regulation layer. The performance of the semiconductor laser element can be improved.

The gallium nitride-based compound semiconductor laser chip comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, a hyperbolic polariton layer is arranged between the lower limiting layer and the lower waveguide layer, and breakdown field intensity distribution in the hyperbolic polariton layer is designed. And a breakdown field strength relationship among the lower limiting layer, the lower waveguide layer and the hyperbolic polariton layer. The performance of the semiconductor laser chip can be improved.

The invention provides a gallium nitride-based semiconductor laser with a gradient radiation recombination coefficient waveguide layer, which is characterized in that a lower waveguide layer and an upper waveguide layer are respectively a gradient radiation recombination coefficient lower waveguide layer and a gradient radiation recombination coefficient upper waveguide layer; and a fitting curve of In ion strength distribution or In atom concentration distribution and a fitting curve of radiation recombination coefficient distribution of the waveguide layer on the gradient radiation recombination coefficient both meet any function distribution of GaussAmp, InvsPoly and Hill in an SIMS test. A fitting curve of In ion strength distribution or In atom concentration distribution and a fitting curve of radiation recombination coefficient distribution of the waveguide layer under the gradient radiation recombination coefficient both meet BiDoseResp function distribution in an SIMS test. According to the invention, carriers, quantum recombination and a light field are efficiently localized, the laser gain is improved, the carriers and the light field are efficiently localized in an active layer (quantum well), meanwhile, non-radiative recombination and absorption loss of a waveguide region are inhibited, and the threshold current, slope efficiency and reliability are further improved.

The application provides a semiconductor laser element, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer; a topological Dirac electron point layer is arranged between the upper waveguide layer and the electron blocking layer, and a topological Dirac electron point layer is arranged between the electron blocking layer and the upper confinement layer; the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3 >= m >= 1; the well layer is any one or any combination of InGaN, InN, AlInN and GaN, and the thickness is 10-80 angstrom meters; and the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN and AlInN, and the thickness is 10-120 angstrom meters. The semiconductor laser element provided by the application can generate non-local effects between electrons and electrons through the cage lattice structure of the arranged topological Dirac electron point layer, and can inhibit the charge density wave and the quantum limited Stark effect.

The present invention provides a display device and electronic device with a 3D camera module, including a depth camera module; the depth camera module includes an edge-emitting laser and an imaging module; the edge-emitting laser is used to emit laser light so that the laser light is irradiated onto an object to be photographed; the imaging module is used to receive the laser light reflected by the object to be photographed, and obtain a depth image of the surface of the object to be photographed based on the laser light. In the present invention, since the output light power of the edge-emitting laser is relatively high, the depth camera module can be set on the backlight side of the display panel, so that there is no need to set a non-display area on the top of the display device to install the depth camera module, and thus the aesthetics and full-screen experience of the display device will not be affected.

The utility model relates to the technical field of optical communication, in particular to ultra-long-distance optical fiber detection equipment, which greatly improves the optical power of a first optical signal through an optical amplifier, so that the optical signal is subsequently attenuated in an optical fiber to be detected within the length of 300km and then is still kept within the detection range of a first detector; in order to prevent the optical power of a second optical signal obtained after saturation amplification of the first optical signal from still exceeding the detection range of the first detector after being attenuated by the to-be-detected optical fiber, a third optical signal is obtained by estimating the length of the to-be-detected optical fiber and attenuating the second optical signal through a first adjustable attenuator; after the optical power of the fourth optical signal exceeds the detection range of the first detector, the second optical signal is attenuated by adjusting the first adjustable attenuator, so that the fourth optical signal meets the detection range of the first detector; according to the utility model, the to-be-detected optical fiber with the length within 300km can be detected, and the ultra-long-distance to-be-detected optical fiber can be detected.

The utility model discloses a lens adjustable optical fiber collimator, include: the first end fixed lens of head fixed cover, the second end of head fixed cover sets up first threaded connection part, and the outer wall of head fixed cover sets up first bolt hole, the first end of intermediate fixed cover sets up with first threaded connection part corresponding second threaded connection part, and the outer wall of intermediate fixed cover sets up with first bolt hole corresponding second bolt hole, and the inside of tail fixed cover sets up first sleeve, and the inside fixed core of first sleeve and intermediate fixed cover, head fixed cover and intermediate fixed cover are connected through first threaded connection part and second threaded connection part and are connected in screw thread, and first bolt hole and second bolt hole are used for inserting fixed peg after adjusting the threaded connection distance of head fixed cover and intermediate fixed cover. The utility model can adjust the positional relationship between lens and the inside fixed core of first sleeve, and then improve the transmission efficiency and light power of optical fiber collimator.

The present invention discloses a forward transmission distributed optical fiber sensing device and method based on few-mode optical fiber. The device includes: a transmitting end, a dual-parameter sensing module and a receiving end. The transmitting end is used to generate two laser beams. The two laser beams pass through the dual-parameter sensing module in opposite directions. The dual-parameter sensing module adopts the few-mode optical fiber for forward transmission. The receiving end is used to collect and demodulate the spectral signal and generate a sensing signal. The present invention uses a forward transmission demodulation method to obtain higher optical power and signal-to-noise ratio; by utilizing the different effective refractive indexes of different modes in the few-mode optical fiber, combined with the mode-selective photon lantern technology, it is possible to effectively extract forward optical signals from each mode; by studying the temperature and strain response characteristics of the optical signal phase change under different modes, dual-parameter measurement of temperature and strain can be achieved on the few-mode optical fiber. The device of the present invention has the advantages of strong noise resistance and low R&D cost.

The invention relates to the field of distributed optical fiber sensing, in particular to a Raman distributed sensing device and method based on sinusoidal modulation light. In the device, an electro-optical modulator is driven by a sinusoidal signal output by a sinusoidal signal generator to carry out sinusoidal modulation on continuous laser output by a continuous laser, and the modulated laser is amplified by an optical amplifier and then enters a sensing optical fiber through a wavelength division multiplexer; a Raman backward anti-Stokes scattering signal generated by each point in the sensing optical fiber is output by the wavelength division multiplexer and then is detected by the photoelectric detector; and after being received and recorded by the oscilloscope, a detection signal output by the photoelectric detector is sent to the calculation unit for calculation to obtain position information and temperature information of the temperature change area. The problem that the spatial resolution is limited by the pulse width in a traditional Raman distributed optical fiber sensing system is solved, and the sensing distance can be greatly increased on the basis that the spatial resolution of the system is not reduced.

The invention provides a GaN-based semiconductor laser chip with a kink-inhibiting upper waveguide layer. The GaN-based semiconductor laser chip comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer which are sequentially arranged from bottom to top. By designing the refractive index coefficient of the upper waveguide layer, the descending angle of the peak position of hole mobility in the direction of the upper coating layer and the ascending angle of the valley position in the direction of the active layer, the carrier limiting effect of the upper waveguide layer is enhanced, the leakage of electrons to one side of the upper waveguide layer is reduced, the permeation and expansion of carriers to a passive region are inhibited, and the performance of the device is improved. The radiation mode shape distortion is inhibited, the radiation recombination loss is reduced, the radiation recombination efficiency and the external differential component efficiency of a fundamental mode are improved, the threshold current density and the kink critical current are reduced, and the slope efficiency and the optical power of the laser are improved.

The invention discloses a GaN-based semiconductor laser element which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer, spin-orbit coupling layers are arranged in the lower limiting layer and the lower waveguide layer, and the spin-orbit coupling layers are designed to be used for regulating and controlling phase-locked laser response and near-field beam guidance. Mode competition is suppressed, the laser suppression ratio is improved, light field dissipation is reduced, coherence and mode gain of laser are improved, the line width of the laser is reduced, and a light beam quality factor is improved; by designing conduction band effective state density distribution, electron affinity distribution and electron effective mass distribution of the spin-orbit coupling layer, a quantum Hall system with relatively strong net spin density and super-strong second-order nonlinear Hall effect is formed, nonlinear optical polarizability is enhanced, population distribution inversion of the active layer is accelerated, and the quantum Hall effect is improved. The active layer state density is enhanced to improve spontaneous radiation and stimulated radiation, and the lasing power and slope efficiency of the laser element are improved.

The semiconductor laser element sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and the quantum limiting stark regulation and control layer is arranged between the active layer and the lower waveguide layer. The electric field distribution of the active layer is regulated and controlled, domain wall motion is induced to be generated, the quantum limited stark effect and InN phase separation of the active layer are inhibited, the interface quality is improved, and the non-radiative recombination center is reduced; light field limitation and limiting factors are enhanced, and the light power of the laser is improved; the quantum confinement stark regulation and control layer generates lattice displacement to induce phase change, improves mutual solution gaps of InN and GaN, inhibits InN segregation of the active layer and the waveguide layer, reduces In component fluctuation, reduces thermal degradation, improves interface crystal quality and thermal stability, reduces a non-radiative recombination center, and improves laser power and slope efficiency.

The utility model provides a laser installation structure and a three-dimensional laser scanner, which comprises a framework, a shell, an installation seat, a laser and a camera, and is characterized in that the framework is arranged in the shell; the mounting seat is connected with the framework, and the mounting seat is connected with the shell; the laser is connected with the mounting seat; the shell is provided with an opening corresponding to the laser; and the camera is arranged at the end part of the framework and extends out of the shell. The framework is arranged in the shell, the mounting seat is arranged on the framework, and the mounting seat is connected with the framework and the laser, so that the integration among the components is better, the structure is more stable, the assembly positioning is accurate, and the scanning imaging accuracy can be ensured.

The utility model relates to the technical field of laser emission, in particular to a laser emitter and optical communication equipment. The laser transmitter comprises a laser chip which is used for generating laser; the gain chip is located on the light emitting side of the laser chip and used for amplifying the laser and then emitting the laser, and the amplification factor of the gain chip can be controlled through the magnitude of injection current; and the coupling lens is positioned between the laser chip and the gain chip and is used for coupling the laser emitted by the laser chip to the gain chip.

The invention relates to a method for regulating a built-in electric field in an active region of a deep ultraviolet light-emitting diode, belonging to the technical field of semiconductor photodiodes. The method comprises, from bottom to top, a substrate, a buffer layer, an n-type semiconductor electron injection layer, a multi-quantum well active layer, a p-type electron blocking layer, a p-type semiconductor hole injection layer, a p-type contact layer, a p-type electrode, and an n-type electrode. The multi-quantum well active layer comprises a plurality of periodically grown units, each unit comprises a quantum well and quantum barriers on both sides of the quantum well, Mg is doped on a side close to the quantum well in the quantum barriers on the upper side of the quantum well, Si is doped on a side close to the quantum well in the quantum barriers on the lower side of the quantum well, and each quantum barrier is not fully doped. The built-in electric field of a deep ultraviolet light-emitting diode is regulated by a selective doping method, so as to solve the problems of wavelength red shift and efficiency attenuation caused by an excessively large built-in electric field, and at the same time, the electron and hole injection of the DUV LED is regulated, so as to improve the photoelectric performance of the DUV LED by suppressing electron leakage and enhancing hole injection.

The GaN-based semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, and the light field limiting enhancement layer is arranged between the upper waveguide layer and the electron blocking layer. The light field limitation enhancement layer is arranged in the GaN-based semiconductor laser element, and the change angle of the In element concentration in the upper waveguide layer and the change angles of the Al element concentration and the In element concentration in the light field limitation enhancement layer are set, so that the distribution of current carriers can be regulated and controlled, the hole injection barrier of a polarization electric field of the upper waveguide layer and the electron blocking layer is reduced, and the light field limitation enhancement layer is formed. The problem of non-uniform hole injection is improved, the hole transport efficiency of the upper waveguide layer and the active layer is enhanced, and the gain uniformity and the optical power are improved.

The laser chip and the optical module provided by the invention comprise a circuit board, a coherent optical component and a light source, the coherent optical component is used for modulating and demodulating an optical signal, and the light source provides light without carrying data for the coherent optical component, so that the coherent optical component modulates the optical signal according to the light without carrying data. The light source comprises a laser chip, the laser chip comprises a gain area, a first grating area and a second grating area, the first grating area and the second grating area are located on the two sides of the gain area respectively, the second grating area comprises a continuous non-etching section and an interval etching section which are connected with each other, the continuous non-etching section does not generate refractive index difference, and the interval etching section does not generate refractive index difference. According to the invention, on the premise that the length of the first grating region is kept unchanged, the continuous non-etching sections are arranged, so that the reflectivity of the first grating region is reduced, and on the premise that the line width is ensured, the light emitting power is increased.

A back-emitting lidar transmitter chip based on a nanobeam switch array includes a nanobeam switch routing network, a metal reflective layer, and a metasurface lens serving as a Fourier transform lens. The nanobeam switch routing network is fabricated on the front side of the chip. After the input optical signal enters the nanobeam switch branch of the network, it is routed by specific nanobeam switch units to the corresponding nanobeam emission branch, and then emitted into free space by specific nanobeam emission units. The front metal reflective layer reflects the upward-radiated light waves downwards, and finally, all downward-emitted light waves are collimated and emitted in a designated direction by the back metasurface lens. This invention enables directional transmission, simultaneously achieving switch selection and vertical emission functions. The silicon-based metasurface lens can serve as a Fourier transform lens to achieve high-precision, wide-range beam scanning, providing a superior technical path for the large-scale manufacturing of silicon-based integrated lidar transmitter chips.

The invention belongs to the technical field of photoelectric detectors for visible light communication, and specifically relates to a method for preparing a plasma enhanced MoS2 photoelectric detector, comprising the following steps: firstly, mechanically peeling off a MoS2 film from a bulk MoS2, transferring the film to a Si / SiO2 substrate, and coating a Cr / Au electrode on the MoS2 film by magnetron sputtering; coating a layer of Au film on the Si / SiO2 substrate by magnetron sputtering, and then subjecting the Au film to vacuum annealing at 600-800°C to form uniform Au nanoparticles; spin coating a PMMA film on the gold nanoparticles, removing SiO2, and then transferring the film to an Au electrode, removing PMMA, and thus obtaining a plasma MoS2 photoelectric detector; the method of the invention has the advantages of simple process and controllability, does not require a harsh growth environment, and is of great significance for realizing a high-sensitivity photoelectric detector device for visible light communication.

The present invention discloses a fluorine-erbium co-doped tin oxide film, a preparation method thereof, and an application in the field of near-infrared electroluminescence. The preparation method comprises: introducing a mixed gas of argon and oxygen under vacuum, and using a radio frequency magnetron sputtering method to co-sputter and deposit a thin film on a fluorine-doped tin oxide target and an erbium oxide target; the mass percentage of stannous fluoride in the fluorine-doped tin oxide target is not more than 20%; in an oxygen or nitrogen atmosphere, heating the film obtained by co-sputtering deposition to above 200°C for high-temperature heat treatment, and cooling to obtain a fluorine-erbium co-doped tin oxide film. After the film of the present invention is used to make an electroluminescent device, under the condition of applying a reverse bias, strong electroluminescence can be achieved based on the electron impact ionization effect occurring in the space charge region.

The application relates to an AlGaN-based deep ultraviolet light emitting diode and a preparation method thereof, and belongs to the technical field of semiconductor photodiodes. From bottom to top, the AlGaN-based deep ultraviolet light emitting diode comprises a substrate, a buffer layer, an n-type semiconductor electron injection layer, a multi-quantum well active layer, a p-type electron blocking layer, an interface barrier regulation layer, a p-type semiconductor hole injection layer, a p-type contact layer, a p-type electrode and an n-type electrode. Negative polarization-induced charges are generated between the electron blocking layer / adjustment layer interface and the adjustment layer / hole injection layer interface, holes are gathered, an 'M'-shaped hole gathering area is formed between the electron blocking layer and the hole injection layer, meanwhile, the adjustment layer can reduce the valence band offset between the electron blocking layer and the hole injection layer, the interface barrier height between the two is reduced, more carriers can cross the electron blocking layer and enter the active area, and the problem of insufficient carrier injection of the DUV LED caused by the interface barrier of the electron blocking layer and the hole injection layer is solved.

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, a first upper limiting layer, an electron blocking layer, a second upper limiting layer and a contact layer which are sequentially arranged from bottom to top, and the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer. The first lower waveguide layer comprises a first upper waveguide layer and a second upper waveguide layer, the first lower waveguide layer is located below the second lower waveguide layer, the upper waveguide layer comprises a first upper waveguide layer and a second upper waveguide layer, the first upper waveguide layer is located below the second upper waveguide layer, and the second lower waveguide layer and the first upper waveguide layer form a strain waveguide layer. The strain waveguide layer forms V-shaped elastic coefficient distribution, V-shaped volume elastic modulus distribution and V-shaped thermal expansion coefficient distribution on the two sides of the active layer. The performance of the laser can be improved.

The present invention discloses an optical phased array with high output optical power, which uses a two-stage structure to complete power splitting. The two-stage structure includes: a primary power splitting module for performing preliminary power splitting on the input coherent light; a secondary power splitting module for further splitting the split coherent light, and the secondary power splitting module and the phase modulation module are located on the same chip or prepared using the same process / material. The power splitting is realized by using a two-stage structure, firstly the primary power splitting module performs preliminary power splitting, and then the secondary power splitting module which is well compatible with the phase modulation module in production and manufacturing completes further power splitting. Compared with the existing solution, the phased array can support greater optical power, thereby improving the maximum working distance of the laser radar and the scanning ranging accuracy at a long distance.

The invention relates to the technical field of semiconductors, and particularly discloses a semiconductor laser structure with cyclic strain buffer layers and a P-type strain buffer layer, which comprises a contact layer, a P-surface limiting layer, the P-type strain buffer layer, a P-surface waveguide layer, an active layer, an N-surface waveguide layer, an N-surface limiting layer and a plurality of groups of cyclic strain buffer layers which are arranged in sequence, the material of the P-type strain buffer layer is AlaGa1-aInbP, and 0 lt; a < lt >; 1, 0lt; blt; 0.48, each group of cyclic strain buffer layers is provided with a strain layer and a buffer layer, the buffer layers are made of gallium arsenide, and the strain layers are made of Al < x > Ga < 1-x > In < y > P, xlt; 1, 0lt; yt; Yt; and 0.48, 3 to 50 groups of cyclic strain buffer layers are arranged. The laser epitaxial structure has the effect of improving the defect of serious warping caused by large pressure stress of the laser epitaxial structure.

The present invention discloses an LED multi-spectrum common light path light source lighting device, comprising a multi-band LED light source, a mobile platform and an optical element, wherein the multi-band LED light source is fixedly mounted on the mobile platform, the mobile platform and the optical element are both mounted on a base, and the light-emitting surface of the multi-band LED light source is arranged opposite to the optical element. Compared with the prior art, the present invention has the advantages of simple structure, low difficulty in installation and adjustment, stable and reliable control mode, economical cost and high light energy utilization rate.