5results about How to "Increase optical power" patented technology

The invention provides a gallium nitride-based semiconductor laser with a gradient radiation recombination coefficient waveguide layer, which is characterized in that a lower waveguide layer and an upper waveguide layer are respectively a gradient radiation recombination coefficient lower waveguide layer and a gradient radiation recombination coefficient upper waveguide layer; and a fitting curve of In ion strength distribution or In atom concentration distribution and a fitting curve of radiation recombination coefficient distribution of the waveguide layer on the gradient radiation recombination coefficient both meet any function distribution of GaussAmp, InvsPoly and Hill in an SIMS test. A fitting curve of In ion strength distribution or In atom concentration distribution and a fitting curve of radiation recombination coefficient distribution of the waveguide layer under the gradient radiation recombination coefficient both meet BiDoseResp function distribution in an SIMS test. According to the invention, carriers, quantum recombination and a light field are efficiently localized, the laser gain is improved, the carriers and the light field are efficiently localized in an active layer (quantum well), meanwhile, non-radiative recombination and absorption loss of a waveguide region are inhibited, and the threshold current, slope efficiency and reliability are further improved.

The application provides a semiconductor laser element, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer; a topological Dirac electron point layer is arranged between the upper waveguide layer and the electron blocking layer, and a topological Dirac electron point layer is arranged between the electron blocking layer and the upper confinement layer; the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3 >= m >= 1; the well layer is any one or any combination of InGaN, InN, AlInN and GaN, and the thickness is 10-80 angstrom meters; and the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN and AlInN, and the thickness is 10-120 angstrom meters. The semiconductor laser element provided by the application can generate non-local effects between electrons and electrons through the cage lattice structure of the arranged topological Dirac electron point layer, and can inhibit the charge density wave and the quantum limited Stark effect.

The utility model discloses a lens adjustable optical fiber collimator, include: the first end fixed lens of head fixed cover, the second end of head fixed cover sets up first threaded connection part, and the outer wall of head fixed cover sets up first bolt hole, the first end of intermediate fixed cover sets up with first threaded connection part corresponding second threaded connection part, and the outer wall of intermediate fixed cover sets up with first bolt hole corresponding second bolt hole, and the inside of tail fixed cover sets up first sleeve, and the inside fixed core of first sleeve and intermediate fixed cover, head fixed cover and intermediate fixed cover are connected through first threaded connection part and second threaded connection part and are connected in screw thread, and first bolt hole and second bolt hole are used for inserting fixed peg after adjusting the threaded connection distance of head fixed cover and intermediate fixed cover. The utility model can adjust the positional relationship between lens and the inside fixed core of first sleeve, and then improve the transmission efficiency and light power of optical fiber collimator.

A back-emitting lidar transmitter chip based on a nanobeam switch array includes a nanobeam switch routing network, a metal reflective layer, and a metasurface lens serving as a Fourier transform lens. The nanobeam switch routing network is fabricated on the front side of the chip. After the input optical signal enters the nanobeam switch branch of the network, it is routed by specific nanobeam switch units to the corresponding nanobeam emission branch, and then emitted into free space by specific nanobeam emission units. The front metal reflective layer reflects the upward-radiated light waves downwards, and finally, all downward-emitted light waves are collimated and emitted in a designated direction by the back metasurface lens. This invention enables directional transmission, simultaneously achieving switch selection and vertical emission functions. The silicon-based metasurface lens can serve as a Fourier transform lens to achieve high-precision, wide-range beam scanning, providing a superior technical path for the large-scale manufacturing of silicon-based integrated lidar transmitter chips.

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, a first upper limiting layer, an electron blocking layer, a second upper limiting layer and a contact layer which are sequentially arranged from bottom to top, and the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer. The first lower waveguide layer comprises a first upper waveguide layer and a second upper waveguide layer, the first lower waveguide layer is located below the second lower waveguide layer, the upper waveguide layer comprises a first upper waveguide layer and a second upper waveguide layer, the first upper waveguide layer is located below the second upper waveguide layer, and the second lower waveguide layer and the first upper waveguide layer form a strain waveguide layer. The strain waveguide layer forms V-shaped elastic coefficient distribution, V-shaped volume elastic modulus distribution and V-shaped thermal expansion coefficient distribution on the two sides of the active layer. The performance of the laser can be improved.