373results about How to "Increase optical power" patented technology

Opto-electrical systems having electrical and optical interconnections formed in thin layers are disclosed. In one set of preferred embodiments, optical signals are conveyed between layers by respective vertical optical couplers disposed on the layers. In other preferred embodiments, optical signals are conveyed by stack optical waveguide coupling means. Yet other preferred embodiments have electrical via means formed in one or more layers to covey electrical signals between two or more layers.

A multicolor optical image-generating device comprised of an array of grating light valves (GLVs) organized to form light-modulating pixel units for spatially modulating incident rays of light. The pixel units are comprised of three subpixel components each including a plurality of elongated, equally spaced apart reflective grating elements arranged parallel to each other with their light-reflective surfaces also parallel to each other. Each subpixel component includes means for supporting the grating elements in relation to one another, and means for moving alternate elements relative to the other elements and between a first configuration wherein the component acts to reflect incident rays of light as a plane mirror, and a second configuration wherein the component diffracts the incident rays of light as they are reflected from the grating elements. The three subpixel components of each pixel unit are designed such that when red, green and blue light sources are trained on the array, colored light diffracted by particular subpixel components operating in the second configuration will be directed through a viewing aperture, and light simply reflected from particular subpixel components operating in the first configuration will not be directed through the viewing aperture.

A light-emitting apparatus provides a ceramic-made base body, a frame body, a light-emitting element, a conductor layer and a light-transmitting member. The base body has on its upper surface a mounting portion for the light-emitting element. The frame body is joined to the upper surface of the base body so as to surround the mounting portion, with its inner peripheral surface shaped into a reflection surface. The wiring conductor has its one end formed on the upper surface of the base body and electrically connected to the light-emitting element, and has another end led to a side or lower surface of the base body. The light-transmitting member is disposed inside the frame body so as to cover the light-emitting element, which contains fluorescent materials for performing wavelength conversion. The base body is so designed that ceramic crystal grains range in average particle diameter from 1 to 5 μm.

The present invention provides an optical array module that includes a plurality of semiconductor devices mounted on a thermal substrate formed with a plurality of openings that function as micro-reflectors, wherein each micro-reflector includes a layer of reflective material to reflect light. Such material preferably is conductive so as to provide electrical connection for its associated semiconductor device.

A method for analyzing gas concentration using doubly resonant photoacoustic spectroscopy, and a doubly resonant photaoacoustic gas detector comprising: i) a continuous wave light beam whose wavelength coincides with an absorption wavelength of a gaseous analyte; ii) a closed path optical cavity having at least two reflective surfaces; iii) an acoustic resonator chamber contained within said optical cavity, and comprising an acoustic sensor for detecting sound waves generated by a gaseous analyte present within said chamber, the light beam passing sequentially into, through and out of said chamber, and being repeatedly reflected back and forth through said chamber, and being modulated at a frequency which is equal to or equal to one-half of an acoustic resonance frequency of said acoustic resonator chamber.

There is provided a light emitting diode package having at least two heat sinks. The light emitting diode package includes a main body, at least two lead terminals fixed to the main body, and at least two heat sinks of electrically and thermally conductive materials, the heat sinks being fixed to the main body. The at least two heat sinks are separated from each other. Thus, high luminous power can be obtained mounting a plurality of light emitting diode dies in one LED package. Further, it is possible to embody polychromatic lights mounting LED dies emitting different wavelengths of light each other in the LED package.

Methods, devices and systems for generating ultrashort optical linear chirped pulses with very high power by amplifying the pulses so that their temporal duration is longer than the storage time of the amplifying medium. The additional gain factor is related to the ratio of the storage time to the stretched pulse. A preferred embodiment connects a mode locked laser source that generates optical pulses whose duration is stretched with a chirped fiber Bragg grating. Embodiments include methods, devices and systems causing an extreme chirped pulse amplifier (XCPA) effect in an oscillator.

A leadframe that is configured to be used with an electronic device, e.g., light emitting diode (LED), includes a heat sink supporting ring for supporting a heat sink. An outer frame is spaced apart from the heat sink supporting ring, and encloses the heat sink supporting ring. At least one supporting lead connects the heat sink supporting ring and the outer frame. A separated lead is extended from the outer frame toward the heat sink supporting ring, and is spaced apart from the heat sink supporting ring. A package body that may be formed by an injection molding after a heat sink is inserted into the leadframe.

Provided is an optical connection apparatus for a parallel optical interconnect module and a parallel optical interconnect module using the same for reducing a coupling loss generated due to an alignment error when coupled with an optical fiber, comprising: a 2D reflector in a prism shape and having at least two rows of cylinder type lens attached thereto; a 2D optical waveguide having at least two layers of core arrays; at least two rows of 2D optical benches; and a 2D ferrule capable of loading at least two layers of optical fibers so as to facilitate the fixing of the 2D optical waveguide for optical interconnection.

A system/method allowing hydrophilicity alteration of a polymeric material (PM) is disclosed. The PM hydrophilicity alteration changes the PM characteristics by decreasing the PM refractive index, increasing the PM electrical conductivity, and increasing the PM weight. The system/method incorporates a laser radiation source that generates tightly focused laser pulses within a three-dimensional portion of the PM to affect these changes in PM properties. The system/method may be applied to the formation of customized intraocular lenses comprising material (PLM) wherein the lens created using the system/method is surgically positioned within the eye of the patient. The implanted lens refractive index may then be optionally altered in situ with laser pulses to change the optical properties of the implanted lens and thus achieve optimal corrected patient vision. This system/method permits numerous in situ modifications of an implanted lens as the patient's vision changes with age.

An IR detector in the form of a thermopile including one or more thermocouples on a dielectric membrane supported by a silicon substrate. Each thermocouple is composed of two materials, at least one of which is p-doped or n-doped single crystal silicon. The device is formed in an SOI process. The device is advantageous as the use of single crystal silicon reduces the noise in the output signal, allows higher reproducibility of the geometrical and physical properties of the layer and in addition, the use of an SOI process allows a temperature sensor, as well as circuitry to be fabricated on the same chip. The detector can also have an IR filter wafer bonded onto it and/or have arrays of thermopiles to increase the sensitivity. The devices can also be integrated with an IR source on the same silicon chip and packaged to form a complete and miniaturised NDIR sensor.

A method and apparatus of interrogating an addressable array unit, which includes a substrate, a light reflecting layer on a front side of the substrate, and a plurality of features on a front side of the array. The method may include, for each of multiple features, illuminating the feature simultaneously with reflected and non-reflected interrogating light. A light emitted from respective features is detected. Either or both, constructive interference of interrogating light at the features, or constructive interference of light emitted from the features, can be obtained to allow lowering of light power from the source, enhanced signal, or reduced noise, or combinations of the foregoing. High depth discrimination may also be obtained without the need for a confocal detection system with conventional pinhole.

The invention discloses an optical fiber distributed disturbance sensor which comprises an optical fiber laser, a bidirectional distributed Raman amplification unit and a photoelectric detection and signal processing unit, wherein an output end of the optical fiber laser is connected with a first coupler; two output ends of the first coupler are respectively connected with an acoustic optical modulator and a third coupler; the bidirectional distributed Raman amplification unit is connected with the acoustic optical modulator by a first circulator and is connected with the third coupler by the first circulator; the photoelectric detection and signal processing unit is connected with the third coupler and used for receiving an interference-enhanced optical signal in the third coupler, converting the optical signal into an electric signal and carrying out subsequent data processing. In the optical fiber distributed disturbance sensor, the back scattering light intensity and the signal-to-noise ratio of the tail end of the optical fiber can be improved by the bidirectional distributed Raman amplification structure so as to improve the sensing distance of the optical fiber distributed disturbance sensor; and the light power received by a detector can be improved through the interference of a part of continuous light output by a light source and the back scattering light, so as to improve the signal-to-noise ratio of the system. The sensor is a combination of conventional photoelectric devices, has a simple structure and is easy to realize.

Disclosed is a nitride-based semiconductor device including a first nitride semiconductor layer doped with an n type impurity, an active layer formed on the first nitride semiconductor layer, the active layer including a plurality of quantum well layers and a plurality of quantum barrier layers alternately laminated over one another, at least one of the quantum layers being doped with the n type impurity, and a nitride semiconductor layer formed over the active layer, and doped with a p type impurity. The quantum barrier layer doped with the n type impurity includes an internal layer portion doped with the n type impurity, and an anti-diffusion film arranged at an interface of the quantum barrier layer with an adjacent one of the quantum well layers, the anti-diffusion film having an n type impurity concentration lower than that of the internal layer portion.

Provided are a lightwave circuit and a method of manufacturing the same. The lightwave circuit includes a first substrate having an engraved core formation groove which is formed on an upper portion of the first substrate, a core layer which is formed inside the engraved core formation groove, a BPSG bonding layer which is formed on the first substrate including the core layer, and a second substrate which is formed on the BPSG bonding layer. Accordingly, light loss and branching uniformity of the lightwave circuit are effectively improved, and the lightwave circuit is manufactured simply and inexpensively while also further improving light loss and branching uniformity of the lightwave circuit.

The invention relates to the active optics phase conjugate method and the imaging device, the optical switch. It constructs the mode separation/integration convertor by the optical waveguide array which is set together at one end, the optics field couples with each other; it is set separately in the other end. It leads the optical wave into the separating optical waveguide by the separation/integration convertor, then to achieve the active optics phase conjugate by adjusting the phase and the swing. It can solves the imaging problem in many limit condition such as big size, high quality, super quick focal variation, long distance and so on. So it can be used in the field of the computer-human conversation, the robot optics, the integrate circuit photoetching, information storage, the military affairs, the energy source, the biology and the light communication network.

A photonic integrated circuit and related method are presented. A photonic integrated circuit comprises a source of radiation, one or more optical amplifiers, a transceiver, and optical waveguides. The optical waveguides couple light between the source of radiation, the one or more optical amplifiers, and the transceiver. The one or more optical amplifiers are configured to increase an optical power of the light up to at least 10 mW. The photonic integrated circuit may be used to perform laser Doppler velocimeter type measurements.