211results about How to "Reduce area requirements" patented technology

Opto-electrical systems having electrical and optical interconnections formed in thin layers are disclosed. In one set of preferred embodiments, optical signals are conveyed between layers by respective vertical optical couplers disposed on the layers. In other preferred embodiments, optical signals are conveyed by stack optical waveguide coupling means. Yet other preferred embodiments have electrical via means formed in one or more layers to covey electrical signals between two or more layers.

In a semiconductor device, via holes are formed around a chip buried in a package, and conductor layers are respectively formed to be connected to one end and another end of the conductor filled in the individual via hole. Portions (pad portions) of the conductor layers which correspond to the conductors are exposed from protective films, or external connection terminals are bonded to the pad portions. The chip is mounted with flip-chip technology so that at least some of electrode terminals thereof are electrically connected to the conductor layers.

An apparatus and method for allowing two different signal paths to be coupled to a multi-tap transformer balun. The multi-tap transformer has a first port, which is coupled to a single antenna, and two or more differential secondary ports. Each port has one or more taps, which are optimized separately for each of the signal paths, allowing each of the two or more signal paths to operate in different frequency bands. Use of the method of the invention can decrease the number of external components and integrated circuit package pins, and reduce the area required for each signal path on an integrated circuit die, a printed circuit board, or the like.

An inductor for a semiconductor device comprises a plurality of loops connected in series and formed along a lateral axis of the semiconductor device. Each loop comprises a bottom leg, a top leg, and a pair of side legs. The bottom legs are parallel and extend along a first plane. The top legs are also parallel and extend along a second plane. The second plane is parallel to and separate from the first plane. The first and second planes are parallel to said lateral axis, and the side legs are perpendicular to the first and second planes. The top and side legs can be formed from copper. A barrier layer between the top legs and a substrate layer adjacent the top legs and between the side legs and the bottom legs and the substrate layer can also be provided. The barrier can be formed from tantalum.

System and method for routing data packets in an Ethernet switch. A preferred embodiment comprises receiving a data frame at a first port, wherein the data frame comprises a header portion and payload portion. The header portion is analyzed to determine a destination port for the data frame. A destination status is added to the header portion to create a modified header portion. The modified header portion is stored in an on-chip memory. The payload portion is stored in an off-chip memory. An on-chip CPU instructs a DMA controller how to route the data frame.

Transaction identifier expansion circuitry is provided, along with a method of operating such circuitry. The transaction identifier expansion circuitry interfaces between a master device and interconnect circuitry used to couple the master device with a plurality of slave devices to enable transactions to be performed. Transaction analysis circuitry is responsive to each transaction in a sequence of transactions initiated by the master device, to compare at least one attribute of the transaction with predetermined attributes indicative of the target slave device for that transaction. Based on the comparison, an initial transaction identifier is then mapped to one of a plurality of revised transaction identifiers, such that the revised transaction identifier is dependent on the target slave device. Reordering circuitry is then arranged to buffer response transfers received from the interconnect circuitry destined for the master device, with each response transfer having the revised transaction identifier associated therewith. The reordering circuitry then re-orders the response transfers having regard to the original transaction order of those transactions within the sequence of transactions that had the same initial transaction identifier, prior to provision of each response transfer to the master device. By such an approach, the performance of a high performance master device can be maintained, by ensuring that for at least the transactions targeted to a particular subset of the slave devices, no intervention by deadlock avoidance circuitry within the interconnect is required when routing transactions to those slave devices, due to the use of different transaction identifiers when accessing those slave devices.

Integrated circuit memory devices include a first column of memory cells electrically coupled to a first pair of bit lines and a bit line precharge and selection circuit. This bit line precharge and selection circuit includes at least one stacked arrangement of thin-film transistors. These thin-film transistors include a first PMOS thin-film pull-up transistor and a first NMOS thin-film pass transistor. These thin-film transistors are electrically coupled to one of the first pair of bit lines. The first column of memory cells includes a column of TFT SRAM cells.

A silicon dioxide layer is formed and a mask layer is deposited and then patterned to produce openings in the mask layer in the region around the gate contacts onto the gate electrode tracks in the logic region. The surface is uncovered around the gate contacts to the gate electrode tracks in the logic region, reducing the silicon dioxide layer. A sacrificial layer covering the gate electrode tracks is formed and patterned to form sacrificial layer blocks above the contact openings for the bit line contacts between the mutually adjacent gate electrode tracks in the cell array region and above the contact openings for the substrate contacts to the semiconductor surface and the gate contacts onto the gate electrode tracks in the logic region. A filling layer is formed between the sacrificial layer blocks, and the sacrificial layer blocks are removed. The contact opening regions are filled with conductive material.

In the present invention, through the provision of a tray placing rack for storing trays in multi steps, the trays accommodating electronic parts after inspection are received in the racks and through the provision of a tray stacking rack above the tray placing rack, an empty tray emptied by having been inspected of the electronic parts before inspection at an inspection stage is stacked on the tray stacking rack. When a certain tray is filled with electronic parts after inspection and is discharged, an empty ray is taken out from the tray stacking rack and the empty tray is fed to the rack position of the discharged tray to permit re-use of empty trays

The invention relates to a memory cell for providing an information item, having a memory element, which has a PMC resistance component with a solid electrolyte material. The solid electrolyte material may be put into a first state with a high electrical resistance and into a second state with a low electrical resistance. The memory element has a resistance element which is connected up to the PMC resistance component in such a way as to reduce the total resistance of the memory element in the first state.

The invention relates to a semiconductor memory, particularly a DRAM, in which the memory cells in each case have a trench capacitor arranged in a lower area of a trench hole and a vertical selection transistor which is formed adjoining an upper area of the trench hole and which connects an inner electrode of the trench capacitor to a bit line, a conductive channel being capable of being formed in dependence on the potential of a word line in the channel area, the channel area completely enclosing the trench hole in its upper area, and the associated word line at least partially enclosing the channel area.

Systems and methods for providing a fully differential amplifier performing common-mode voltage control having reduced area and power requirements are disclosed. The amplifier disclosed comprises an additional input stage at the amplifier input which senses the common mode voltage of the amplifier's inputs and applies internal feedback control to adjust the output common-mode voltage until the input common-mode voltage matches a target voltage and thereby indirectly set the output common-mode voltage. Furthermore the internal common-mode control can be implemented in such a manner as to provide a feed-forward transconductance function in addition to common-mode control if desired. Moreover it is possible to use feedback from other amplifier stages in an amplifier chain to implement common-mode feedback.

A display panel driving circuit includes N number of amplifiers configured to supply N number of output voltages to a display panel; N number of output switches configured to transmit output signals from the N number of amplifiers through N number of pads to the display panel; and a plurality of charge sharing switches configured to share charges among the N number of pads, wherein the charge sharing switches are formed in the pads.

A method for reducing circuit sensitivity to single event upsets in programmable logic devices, involves identifying single event upset sensitive gates within a single event upset sensitive sub-circuit of a programmable logic device as determined by the input environment and introducing triple modular redundancy and voter circuits for each single event upset sensitive sub-circuit so identified.