7138 results about "Thin layer" patented technology

A surgical instrument for being endoscopically or laparoscopically inserted to a surgical site for simultaneous stapling and severing of tissue includes electrically actuated deployment of buttress pads held on inner surfaces of upper and lower jaws of a staple applying assembly. Thereby, thick or thin layers may be stapled and severed without improper staple formation nor with nonoptimal deployment of the buttress pads. Electroactive polymer (EAP) actuated latches, an EAP channel, or a rigid channel with an EAP pinch lock reliably hold the buttress pad until deployment is desired with a low force to separate the stapled and severed buttress pad / tissue combination with the respective EAP mechanism activated for deployment.

Vertically oriented semiconductor memory cells are added to a separately fabricated substrate that includes electrical devices and / or interconnect. The plurality of vertically oriented semiconductor memory cells are physically separated from each other, and are not disposed within the same semiconductor body. The plurality of vertically oriented semiconductor memory cells can be added to the separately fabricated substrate as a thin layer including several doped semiconductor regions which, subsequent to attachment, are etched to produce individual doped stack structures, which are then supplied with various dielectric coatings, gate electrodes, and contacts by means of further processing operations. Alternatively, the plurality of vertically oriented semiconductor memory cells may be completely fabricated prior to attachment. DRAMs, SRAMs, non-volatile memories, and combinations of memory types can be provided.

Sampling is controlled in order to enhance analyte concentration estimation derived from noninvasive sampling. More particularly, sampling is controlled using controlled fluid delivery to a region between a tip of a sample probe and a tissue measurement site. The controlled fluid delivery enhances coverage of a skin sample site with the thin layer of fluid. Delivery of contact fluid is controlled in terms of spatial delivery, volume, thickness, distribution, temperature, and / or pressure.

Method for forming a thin film at low temperature by using plasma pulses is disclosed. While a purge gas or a reactant purge gas activated by plasma is continuously supplied into a reactor, a source gas is supplied intermittently into the reactor during which period plasma is generated in the reactor so that the source gas and the purge gas activated by plasma reacts, so that a thin film is formed according to the method. Also, a method for forming a thin layer of film containing a plural of metallic elements, a method for forming a thin metallic film containing varied contents by amount of the metallic elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , and a method for forming a thin film containing continuously varying compositions of the constituent elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , are disclosed. The methods for forming thin films disclosed here allows to shorten the purge cycle duration even if the reactivity between the source gases is high, to reduce the contaminants caused by the gas remaining in the reactor, to form a thin film at low temperature even if the reactivity between the source gases is low, and also to increase the rate of thin film formation.

Vertically oriented semiconductor memory cells are added to a separately fabricated substrate that includes electrical devices and / or interconnect. The plurality of vertically oriented semiconductor memory cells are physically separated from each other, and are not disposed within the same semiconductor body. The plurality of vertically oriented semiconductor memory cells can be added to the separately fabricated substrate as a thin layer including several doped semiconductor regions which, subsequent to attachment, are etched to produce individual doped stack structures, which are then supplied with various dielectric coatings, gate electrodes, and contacts by means of further processing operations. Alternatively, the plurality of vertically oriented semiconductor memory cells may be completely fabricated prior to attachment. DRAMs, SRAMs, non-volatile memories, and combinations of memory types can be provided.

Apparatus for producing an object by sequentially forming thin layers of a construction material one on top of the other responsive to data defining the object, the apparatus comprising: a plurality of printing heads each having a surface formed with a plurality of output orifices and controllable to dispense the construction material through each orifice independently of the other orifices; a shuttle to which the printing heads are mounted; a support surface; and a controller adapted to control the shuttle to move back and forth over the support surface and as the shuttle moves to control the printing heads to dispense the construction material through each of their respective orifices responsive to the data to form a first layer on the support surface and thereafter, sequentially the other layers; wherein each printing head is dismountable from the shuttle and replaceable independently of the other printing heads.

Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed form the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and / or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

A method for making a thin layer from a structure. A stacked structure is made of a first part designed to facilitate the introduction of gaseous species and of a second part, the second part having a first free face and a second face integral with the first part. A gaseous species is introduced into the structure, from the first part, to create an embrittled zone, a thin layer being thus delimited between the first face of the second part and the embrittled zone. The thin layer is separated from the remaining of the structure at the level of the embrittled zone.

A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.

Arrangement for producing a three-dimensional product, which arrangement comprises a work table on which said three-dimensional product is to be built up, a powder dispenser which is arranged so as to distribute a thin layer of powder on the work table for forming a powder bed, a radiation gun for delivering energy to the powder, fusing together of the powder then taking place, means for guiding the beam emitted by the radiation gun over said powder bed for forming a cross section of said three-dimensional product by fusing together parts of said powder bed, and a control computer in which information about successive cross sections of the three-dimensional product is stored, which cross sections build up the three-dimensional product, where the control computer is intended to control said means for guiding the radiation gun over the powder bed according to an operating scheme forming a cross section of said three-dimensional body, said three-dimensional product being formed by successive fusing together of successively formed cross sections from by the powder dispenser, and method for producing three-dimensional product using such an arrangement.

A radiopaque nitinol medical device such as a stent for use with or implantation in a body lumen is disclosed. The stent is made from a superelastic alloy such as nickel-titanium or nitinol, and includes a ternary element selected from the group of chemical elements consisting of iridium, platinum, gold, rhenium, tungsten, palladium, rhodium, tantalum, silver, ruthenium, or hafnium. The added ternary element improves the radiopacity of the nitinol stent comparable to that of a stainless steel stent of the same size and strut pattern coated with a thin layer of gold. The nitinol stent has improved radiopacity yet retains its superelastic and shape memory behavior and further maintains a thin strut / wall thickness for high flexibility.

A device for manufacturing a three-dimensional product, which device comprises a work table on which said three-dimensional product is to be built, a powder dispenser which is arranged to lay down a thin layer of powder on the work table for the formation of a powder bed, a ray gun for giving off energy to the powder whereby fusion of the powder takes place, members for controlling of the beam released by the ray gun across said powder bed for the formation of a cross section of said three-dimensional product through fusion of parts of said powder bed, and a controlling computer in which information about successive cross sections of the three-dimensional product is stored, which cross sections build the three-dimensional product, the controlling computer intended to control said members for guiding the ray gun across the powder bed according to a running schedule forming a cross section of said three-dimensional body, whereby said three-dimensional product is formed by successive fusion of successively formed cross sections from powder layers successively laid down by the powder dispenser.

Embodiments relate to depositing a layer of material on a permeable substrate by passing the permeable substrate between a set of reactors. The reactors may inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate as the permeable substrate passes between the reactors. Part of the gas injected by a reactor penetrates the permeable substrate and is discharged by the other reactor. The remaining gas injected by the reactor moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same reactor.