463 results about "Thin layer" patented technology

The invention belongs to the field of medical instrument coloring agents, and provides a natural anthocyanin endoscope coloring agent. According to the invention, the innovative design of combining a ternary color-stabilizing compound formed by anthocyanin, a co-chromophore and hydroxypropyl beta cyclodextrin with a chitosan sodium alginate polysaccharide system and a composite buffer system is adopted, and the viscosity is controlled to be 200-320 millisecond, the particle size of spray droplets is 40-60 microns, and the thickness of a thin film is 10-30 microns through specific molar ratio compatibility and a genipin crosslinking technology. Through accurate regulation and control, the excellent performance that a double-network thin layer is formed under the calcium ion environment that the absorbance retention rate at 520 nanometers is not lower than 90% and the elution rate is not lower than 90% under the irradiation of hundred thousand lux white light is achieved, the technical problems that a traditional endoscope coloring agent is poor in safety, low in stability and insufficient in mucous membrane contrast ratio are solved, and the wide clinical application value is achieved.

Provided herein are methods of depositing molybdenum (Mo) films. The methods involve depositing a thin layer of a molybdenum (Mo)-containing film such a molybdenum oxide, a molybdenum nitride, or a molybdenum oxynitride. The Mo-containing film is then converted to an elemental Mo film. A bulk Mo film may then be deposited on the elemental Mo film. In some embodiments, the process is performed at relatively low temperatures.

The invention belongs to the technical field of optical beam splitting elements, and particularly relates to a beam splitter prism depolarization film, a preparation method thereof, a beam splitter prism and a preparation method thereof. The beam splitter prism depolarization film provided by the invention comprises a first SiO2 film layer, a first Ta2O5 film layer, a first Al2O3 film layer, a metal silver layer, a second Al2O3 film layer, a second Ta2O5 film layer and a second SiO2 film layer which are sequentially laminated, wherein the first SiO2 film layer is in contact with the surface of a substrate. According to the beam splitter prism depolarization film provided by the invention, the number of film layers is obviously reduced, the total film thickness is obviously reduced, the film layer thickness is greatly optimized, the film material consumption cost and the equipment energy consumption are reduced, and the processing efficiency is greatly improved; meanwhile, the risks of film layer breakage and electroplated layer falling are reduced; the film layer contains less thin layers, the equipment monitoring is more accurate, the actual effect is closer to the design, the achievable specification is more strict, and the practical value is excellent.

A display apparatus includes: a substrate including a display area and a peripheral area around the display area, the substrate having a bent portion; a plurality of display elements in the display area; and a thin film encapsulation layer over the plurality of display elements and including a first encapsulation layer, a second encapsulation layer over the first encapsulation layer, and an organic encapsulation layer between the first encapsulation layer and the second encapsulation layer, wherein the second encapsulation layer includes a plurality of inorganic thin layers and a plurality of organic thin layers alternately arranged, and a thickness of the second encapsulation layer is equal to or less than a thickness of the first encapsulation layer.

The invention provides a method for preparing a beta-Ga2O3 heteroepitaxial thin film with high crystal quality on a sapphire substrate, which comprises the following steps of: selecting a sapphire single crystal wafer as a substrate, cleaning the sapphire single crystal wafer, and putting the cleaned sapphire single crystal wafer into metal organic chemical vapor deposition equipment; with trimethyl gallium or triethyl gallium as a gallium source and oxygen as an oxygen source, growing a beta-Ga2O3 thin layer with the thickness of less than 10 nm; hydrogen is introduced, and the defect bond of the beta-Ga2O3 thin film is etched; the temperature of the substrate is increased to 1000 DEG C or above, oxygen is introduced, annealing is carried out, the defects are further bridged, and oxygen vacancies are reduced; and reducing the temperature of the substrate to the growth temperature, repeating the steps 2-4, and gradually accumulating the thickness to reach an expected value. According to the method, layer-by-layer growth and in-situ defect repair are combined, and the ultra-wide forbidden band beta-Ga2O3 heteroepitaxial crystal film with extremely low defect density and ultra-high quality is successfully prepared.

Provided herein are methods of depositing molybdenum (Mo) films. The methods involve depositing a thin layer of a molybdenum (Mo)-containing film such a molybdenum oxide, a molybdenum nitride, or a molybdenum oxynitride. The Mo-containing film is then converted to an elemental Mo film. A bulk Mo film may then be deposited on the elemental Mo film. In some embodiments, the process is performed at relatively low temperatures.

The invention discloses a wafer precision grinding method based on laser subsurface modification softening, and belongs to the technical field of semiconductor manufacturing. The method is used for carrying out final damage layer removal and surface finish machining on the hard and brittle wafers (such as silicon carbide and diamond) subjected to preliminary mechanical polishing. The method comprises the following steps: (1) detecting the depth of a damaged layer on the subsurface of a wafer; (2) focusing ultrafast laser on the subsurface of the wafer, scanning to form a continuous and compact softened modified layer, controlling the modified layer to extend upwards in the vertical direction, so that the modified layer covers most of the volume of the material to be removed, and only retaining a micron or submicron original hard thin layer on the top layer of the wafer; (3) carrying out nondestructive testing on the modified layer; and (4) an ultra-precision grinding process (such as CMP or PAP) is adopted, the supporting weakening effect of the modified layer on the top hard thin layer and the characteristic that the modified layer is easy to remove are utilized, and all the to-be-machined allowances are rapidly removed at a time. According to the method, on the premise that the high-quality surface is not damaged, the finish machining efficiency of the superhard material is remarkably improved through the mechanism of internal softening and top layer collapse removal.

The invention provides a method for improving the strength and hydrogen brittleness resistance of an austenitic stainless steel material, which comprises the following steps: under the protection of argon, depositing thin austenitic stainless steel powder by using a powder spreading device to form an austenitic stainless steel powder thin layer, and simultaneously continuously applying ultrasonic waves to the austenitic stainless steel powder thin layer; a laser beam is incident in a scanning mode to melt the austenitic stainless steel powder thin layer, so that the melted austenitic stainless steel powder thin layer is bonded with the part in the solidified area; then, the thickness of one austenitic stainless steel powder thin layer is reduced for the part, and deposition and laser beam melting of the next austenitic stainless steel powder thin layer are carried out; and by repeating the steps, the sample is constructed layer by layer until the 3D printing sample with the preset shape is obtained. Additive manufacturing is carried out by adopting selective laser melting and applying ultrasonic waves at the same time, and the problem that under the hydrogen pre-charging condition, the higher the strength is, the poorer the hydrogen embrittlement resistance is existing in traditional machined structure state austenitic stainless steel is solved.

The application relates to the technical field of metal organic thin layer material preparation, in particular to a kilogram-level preparation method of metal organic thin layer material. The preparation method comprises the following steps: S1, adding zirconium tetrachloride and H2BPYDC into a polytetrafluoroethylene reaction kettle, dissolving the zirconium tetrachloride and the H2BPYDC, and then adding a composite; S2, sequentially adding a DMF solution of palladium fluoroacetate, a catalyst and concentrated hydrochloric acid into the reaction kettle; S3, transferring the reaction kettle into an oven, centrifuging to obtain a cyan suspension after 18-20 hours, dispersing the cyan suspension in a DMF solution in batches at 60 DEG C, placing for 5-6 hours, removing unreacted substrates, and obtaining a solid; S4, cleaning the solid obtained in S3 by using DMF and tetrahydrofuran respectively, and vacuum drying for 12 hours to obtain the metal organic thin layer material. The kilogram-level preparation method of metal organic thin layer material is provided, so as to solve the problems of low preparation yield, slow rate and difficulty in kilogram-level preparation of metal organic thin layer material in the related art.

The invention provides a method for enabling an optical fiber module interface radiator to be closely attached to an indium heat-conducting sheet. The method comprises the steps that the surface of a nickel-plated layer of the interface radiator is polished to form a rough surface; preliminarily forming an indium heat-conducting sheet on the rough surface; then the workpiece is placed on a jig platform, and a mirror surface roller is arranged on the jig platform; providing a PET (Polyethylene Terephthalate) sheet which is positioned between the surface of the indium heat-conducting sheet and the mirror roller; the method comprises the following steps: pressing an indium heat-conducting sheet into a roller under the roller pressure of 40-110kgf, riveting the bottom of the indium heat-conducting sheet into a rough surface which is tightly combined with the interface radiator, so that a gap and air do not exist on the combined surface, and the top surface of the indium heat-conducting sheet is a flat smooth surface, is attached to the surface of the interface radiator and is tightly combined and molded into an indium heat-conducting thin layer; the surface of the indium heat conduction thin layer is coated with an anti-oxidation coating with the thickness of 1-5 microns; therefore, the indium heat-conducting material can be tightly adhered to the surface of the interface radiator without an adhesive, the interface radiator has excellent drawing resistance and friction resistance, and the influence of thermal resistance caused by air and the adhesive is reduced.

The design of a stainless-steel cylindrical tool for manual grinding and polishing of cement-based thin sample (two cylinders one withing the other, connected by the movable threaded holder with a plate, that passes through the middle) enables very precise removal of sample layers to its thickness of 1-mm ( 1 / 32 inch) and less. The squared, young aged sample rests on the circular plate on a holder, that can be slowly and safely rotated during thin layer removal, to obtain a smooth and flat sample surface, which can produce sharp digital images in ESEM, necessary for detailed and accurate image analysis. The cylindrical tool can be reassembled. It is reusable, easy to maintain and clean. Its design is practical since inner cylinder can be replaced if damaged, with the identically designed inner cylinder or with differently designed inner cylinder adjusted to another sample size.

The invention discloses a method for simultaneous thin-layer identification of ginseng and glossy privet fruit in cordyceps sinensis capsules, and belongs to the field of health food quality control. Aiming at the defects of separate detection, tedious process and low efficiency in the prior art, the method comprises the following steps: preparing a test solution through water ultrasonic extraction, water saturated n-butyl alcohol extraction and washing with a 5-8% ammonia water solution, matching with a ginseng / glossy privet fruit reference medicinal material and a mixed reference solution, and adopting a trichloromethane-methanol-underwater layer solution as a developing solvent. Synchronous identification of two components is realized through double processes of iodine fumigation sunlight inspection and sulfuric acid ethanol spray ultraviolet 365nm inspection. The method is good in separation degree, clear in spots, excellent in specificity and durability, efficient in operation and low in reagent toxicity, the detection cost is greatly reduced, reliable support is provided for cordyceps sinensis capsule quality control, and a technical normal form is provided for synchronous thin-layer identification of multiple traditional Chinese medicinal materials.

The application discloses a kind of gardenia and its processed product identification method, comprising: step one, respectively take equal amount of gardenia sample powder, gardenia processed product sample powder;Step two, the above-mentioned powder is respectively soaked with ethanol solution, then ultrasonic extraction is carried out, filtration, filter liquor is evaporated to dryness, obtain gardenia sample crude extract, gardenia processed product sample crude extract;Step three, the above-mentioned crude extract is respectively dissolved with water, then sequentially extracted with petroleum ether, ethyl acetate twice, and the two extraction liquids are combined and evaporated to dryness, obtain extract, the extract is dissolved with methanol, obtain gardenia sample test solution, gardenia processed product sample test solution;Step four, the above-mentioned test solution is respectively spotted on the same silica gel thin layer plate, with developing agent development, dry, with color developing agent color development, and under ultraviolet lamp, view thin layer chromatogram, according to the number, position, color of fluorescence spot on thin layer chromatogram, identify sample variety.

An apparatus performs three-dimensional shaping by irradiating metal powder with laser to fuse the powder and solidifying the fused powder to form a thin layer, which are repeatedly perfumed, and stacking the formed thin layers. The apparatus cuts the formed thin layers every time a predetermined number of layers have been formed based on cutting data, thereby improving the shaping accuracy of a shaped object. The cutting data defines a shape to be cut, which may a shape S3 obtained by reflecting a displacement d1 between a target shape S1 and a shape S2 including a deformation predicted by a simulation, onto the target shape S1, or a shape S5 obtained by reflecting a displacement d2 between the target shape S1 and a shape including a further predicted deformation, onto the shape S3.

A paper cup having an aluminum lining layer, including a side part and a bottom part, wherein the side part includes an inner aluminum thin layer and a paper material layer and the bottom part includes an inner aluminum thin layer and a paper material layer. Adhesives are placed partially or in whole to joints between the side part and the bottom part including a first joint part between the inner aluminum thin layer of the side part and the inner aluminum thin layer of the bottom part, and a second joint part between the inner aluminum thin layer of the side part and an outer part of the bottom part, and a third joint part between the inner aluminum thin layer of the side part and the beneath part of the surrounding supporter of the bottom part, to join the side part and the bottom part.

The invention relates to the technical field of spraying control, in particular to a spraying control method and system for a radiation refrigeration coating based on feedback adjustment, balance of efficiency and precision is achieved through two times of spraying, the first time of spraying is thin, and paint is easier to level and not prone to sagging due to gravity. And the sagging risk is further reduced through thin layer supplementary coating for the second time. And the thin coating is more beneficial to solvent volatilization and bubble escape. The substrate formed after the first coating is cured is also beneficial to better adhesion and leveling of the second coating, and interface defects are reduced. After the first time of spraying, the surface features are scanned, the control parameters of the second time of spraying are formulated by utilizing the surface features, and the uneven position is repaired by controlling the speed and the pressure, so that the finally obtained paint surface has high planarity and uniformity while the thickness is ensured. For the rare earth radiation refrigeration coating, the spraying control method disclosed by the invention can exert the refrigeration effect of the rare earth radiation refrigeration coating to a greater extent.

The present invention discloses a photolithography apparatus and method for forming a three-dimensional structure inside a photosensitive material configured to activate photochemical reactions according to a predetermined pattern in a layer inside the photosensitive material. A stage holds the volume of photosensitive material. A light source system produces an excitation beam of a first wavelength and a depletion beam of a second wavelength. A light modulation system forms one or more modulated images using the excitation beam and the depletion beam. An optical system focuses the one or more modulated images in a focal plane positioned inside the three-dimensional volume of photosensitive material. The focused one or more modulated images generate the predetermined pattern comprising one or more excitation regions and one or more depletion regions in the focal plane, selectively activating a photochemical reaction localized to a thin layer of the photosensitive material in the vicinity the focal plane.

The invention relates to a method for manufacturing a donor wafer comprising the following steps: a) supplying a donor substrate made of a single-crystal material, said donor substrate having been recycled at least once, after a transfer of a thin layer of said donor substrate onto a receiving substrate so as to form a composite structure, said composite structure comprising a surface layer formed in whole or in part by the thin layer and disposed on the receiving substrate, b) checking the quality of the composite structure by inspecting a free surface of the surface layer to detect defects present on and / or in the surface layer, said defects then being classified into a first category, considered non-critical, or into a second category, considered critical.c) the selection of the donor substrate if the density of defects classified in the second category during step b) is less than a predetermined density, d) the assembly of the donor substrate selected in step c) onto a support substrate, by bonding, to form the donor wafer. The invention also relates to a donor wafer comprising a single-crystal silicon carbide donor substrate, having a thickness between 100 μm and 300 μm, disposed on a support substrate, and characterized in that a free face of the donor substrate has fewer than 0.5 micro-hole or inclusion defects / cm². Figure to be published with the abstract: No figure.

The present application provides a kind of Echinops formula granule quality detection method, including the thin layer identification of Echinops formula granule, characteristic map construction and β-ecdysterone content determination, the content standard of formula granule is limited to every 1g contains β-ecdysterone 3.5~14.4mg, thin layer identification is identified using thin layer chromatography, characteristic map construction and β-ecdysterone content determination are all using liquid chromatography method.The quality detection method of Echinops formula granule of the present application, by the detection of thin layer identification, characteristic map construction and β-ecdysterone content determination to assess the quality of Echinops formula granule, can comprehensively reflect the inherent quality of formula granule and better control the quality of Echinops formula granule.

The invention discloses a heat reflection type mixture applied to a road surface thin layer and a preparation method and application thereof.The heat reflection type mixture comprises dry components, the dry components comprise, by mass, 50-55% of first coarse aggregate, 18-21% of second coarse aggregate, 15-24% of fine aggregate, 3-4% of rutile type titanium dioxide powder and 1.5-3% of glass beads, the particle size of the first coarse aggregate is 5-8 mm, the particle size of the second coarse aggregate is 5-8 mm, the particle size of the fine aggregate is 5-8 mm, and the particle size of the second coarse aggregate is 5-8 mm. The particle size of the second coarse aggregate is 3-5 mm, the particle size of the fine aggregate is less than or equal to 3 mm, the particle size of the rutile type titanium dioxide powder is less than 0.075 mm, and the particle size of the glass beads is 0.3-0.6 mm; the mass ratio of the cementing material to the dry components is (0.075-0.083): 1. The method has the advantages of being simple in production process and high in operability, and the development of a thin-layer maintenance technology towards green functionalization can be promoted.

Two-dimensional (2D) materials formed in very thin layers improve the performance of semiconductor devices. However, forming contacts on 2D materials tends to damage and penetrate the 2D material. Relatively gentle etching processes have been developed that are highly selective for 2D materials and allow etching of vertical holes into the 2D material without damaging or penetrating it. Low-power deposition processes form a protective liner when performing metal filling, further preventing damage to the 2D material when forming metal contacts within holes. These processes make it possible to form vertical metal contacts on planar 2D materials or vertical sidewall contacts within 3D NAND without damaging the 2D material. This increases the contact area, reduces contact resistance, and improves the performance of the 2D material in the device.

Method for producing a thin layer of material on a surface (S) of a substrate (O), comprising the steps of projecting particles of material from a source (3) of particles of material, moving the support (4) on a closed trajectory around a first axis of rotation (A1), pivoting the substrate (O) on itself around a second axis of rotation (A3) corresponding to an axis of symmetry of the surface (S) of the substrate (O). The method comprises the step of moving the support to expose different portions of the surface (S) of the substrate (O) to a direct projection of the particles of material for an exposure time depending on the desired thickness of material on said surface portions. Device for implementing this method. FIGURE OF THE ABSTRACT: Fig. 1

The invention discloses a short-process preparation method of an ultra-high-speed laser cladding coating on the surface of a shaft part and the obtained coating, and the method comprises the following steps: firstly, based on energy conservation and momentum balance, calculating and determining a stable process window of ultra-high-speed laser cladding; based on a geometrical optical model, the horizontal offset distance of the laser head relative to the central axis of the workpiece is calculated and controlled. Based on molten pool stress analysis under a rotating coordinate system, the relation between the rotating direction of a workpiece for restraining flowing of a molten pool and the offset direction of a laser head relative to the central axis of the workpiece is determined, under the determined conditions, ultra-high-speed laser cladding is conducted on the outer circle surface of the shaft part, and single-pass precision grinding is directly conducted after cladding. According to the method, the thin-layer coating with the smooth surface and the uniform thickness is obtained through physical stability control, the machining route of cladding-turning-grinding is simplified into cladding-single-pass precision grinding, and the machining allowance and the production cost are remarkably reduced.

The invention discloses a space-time modulation hydride vapor phase epitaxy reaction chamber, equipment and a method. Wherein the reaction chamber comprises a reaction chamber which is provided with a water cooling side wall and is limited by a flange to form a cavity, and the interior of the cavity is divided into an upper part, a middle part and a lower part; the metal source reaction boat assembly is positioned at the upper half part of the reaction chamber cavity; the space-time modulation reaction growth device is positioned in the middle of the reaction chamber cavity; the heating device and the tail gas collecting device are positioned at the lower half part of the reaction chamber cavity; and the central gas circuit device is positioned at the axis position of the cavity of the reaction chamber and is connected with the metal source reaction boat assembly at the upper half part of the cavity and the space-time modulation reaction growth device in the middle of the cavity. According to the invention, the growth time is controlled through the combination of time modulation and space modulation, so that the thickness of the material thin layer is accurately controlled, the flexibility of growth program setting is improved, the rapid epitaxial growth of the ultra-thin layer and ultra-thick layer material stacking structure is realized, and the low-cost epitaxial growth requirement of a semiconductor device with a complex structure is met.

The invention relates to a specular mirror comprising a clear glass substrate coated on one of its faces, successively from said glass substrate, with a stack of thin layers, a reflective silver layer deposited by silvering and then a paint layer, characterized in that said stack of thin layers does not comprise a metallic layer and comprises at least one layer based on silicon nitride having, at a wavelength of 550 nm, a refractive index n ranging from 2.7 to 3.6 and an extinction coefficient k greater than 0.20.

The invention discloses a multistage separation and purification device for photoresist stripping liquid, and relates to the technical field of photoresist stripping liquid regeneration, the multistage separation and purification device specifically comprises a separation and purification assembly and a separation temperature control module, and heat transfer evaporation is completed through a multistage heat pipe structure arranged in a heat exchange cavity; the flow direction range of the photoresist stripping liquid is changed in combination with dynamically changeable thin layer gaps, and the efficient heat transfer evaporation effect is achieved under vortex flow formed by continuous rotation, so that the solvent recovery efficiency in waste photoresist stripping liquid regeneration is improved under the comprehensive effect of the three, the energy consumption loss in the solvent recovery process is reduced, and the recovery efficiency of the photoresist stripping liquid is improved. Furthermore, by combining with intelligent separation temperature control setting, the flow range of the photoresist stripping liquid is subjected to real-time follow-up adjustment in the process that the temperature required by heat transfer of the photoresist stripping liquid is changed, so that the efficient heat transfer evaporation effect of the photoresist stripping liquid is ensured.

The utility model relates to a continuous die cutting plaster machine which comprises a rack, the base material supply device is used for supplying a sheet-shaped base material for preparing the plaster; the medicine dripping device is used for dripping quantitative ointment on the surface of the sheet-shaped base material according to a specific time interval; the film covering device is used for covering a protective film on the sheet-shaped base material dropwise added with the ointment; the follow-up device is used for driving the press-down forming device to move back and forth in the moving direction of the sheet base material, when the follow-up mechanism and the sheet base material move in the same direction, the follow-up mechanism and the sheet base material move at the same speed, and when the follow-up mechanism and the sheet base material move in the opposite direction, the follow-up mechanism quickly returns to the initial position; the press-down forming device is arranged on the follow-up device and used for pressing down the protective film to press the ointment located between the sheet-shaped base material and the protective film into a thin layer in a specific shape; and the die cutting device is used for cutting off the part with the ointment thin layer from the flaky base material to obtain a finished ointment product. The production efficiency of the plaster is greatly improved.

This invention discloses a method for preparing a transparent electrode film, the transparent electrode film itself, and its applications, relating to the field of conductive thin films. The method involves stacking a substrate, a transparent crystalline thin layer, and several spaced metal thin layers. A voltage is applied to the metal thin layers, causing the transparent crystalline metal thin layers to break down and form fine, filamentary conductive channels. Annealing is then performed to allow metal atoms in the metal thin layers to diffuse into these filamentary conductive channels, forming conductive fibers. The remaining metal thin layers are then removed to form the transparent electrode film. The substrate can be an epitaxial wafer for an ultraviolet LED, detector, or solar cell; the transparent crystalline thin layers can be AlN, GaN, or Al... x Ga （1‑x） The metal layers are made of materials such as N, Al2O3, or TiO2, with thin metal layers of Au, Ag, Ti, Cu, or Al. They possess both high conductivity and high transparency, have a simple structure, and are easy to mass-produce. As a key component of ultraviolet optoelectronic devices, they can improve the photoelectric conversion efficiency of the devices and can be applied in many fields such as flexible electronics and transparent smart devices.

The invention discloses a superlattice structure, a GaN HEMT (High Electron Mobility Transistor) device epitaxial structure and a preparation method, the superlattice structure is formed by periodically and alternately stacking an AlN thin layer, an Al < x > Ga < 1-x > N thin layer and an Al < y > Ga < 1-y > N thin layer, 50, y < lt >; 50; the thicknesses of the AlN thin layer, the Al < x > Ga < 1-x > N thin layer and the Al < y > Ga < 1-y > N thin layer are t1, t2 and t3 respectively, and the thickness ratio of the three layers is that (t1 + t2): t3 is more than or equal to 1: 15 and less than or equal to 1: 50. By increasing the thickness ratio of the AlN thin layer to the AlGaN thin layer, the surface roughness of the superlattice structure is obviously improved, the vertical collapse pressure of the device from inside to outside is obviously improved, the poor vertical collapse pressure in the central area in the device can be obviously improved, the overall uniformity of the vertical collapse pressure of the device is greatly improved, and the performance of the device is improved. Therefore, the electrical property of the device is obviously improved, and no edge crack defect is generated in the range.

The application discloses a bearing testing device in the field of bearing testing, which comprises, from top to bottom, a motor seat assembly, an upper beam assembly, an upper bearing assembly, a lower bearing assembly, a loading assembly and a lower beam; the motor seat assembly is fixedly connected with the upper beam assembly and drives the rotation of a main shaft in the upper beam assembly; guide columns pass through the lower beam, the lower bearing assembly and the upper bearing assembly, and the upper and lower ends of the guide columns are fixed on the upper beam assembly and the lower beam respectively; the upper bearing assembly comprises an upper sample, a moving block, an upper bearing seat fixed on the bottom surface of the upper beam assembly and an upper sample seat fixed on the bottom of the upper bearing seat; the main shaft passes through the upper bearing seat and the upper sample seat; the moving block is fixed on the shaft end of the main shaft; and the upper sample is placed between the moving block and the upper sample seat; the application is suitable for evaluating the friction-reducing and wear-resistant properties and comprehensive use performance of self-lubricating bearing materials, surface thin layers or layered composite materials and solid lubricating materials.