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61results about How to "Avoid excessive height" patented technology

Dental implants and dental implant/prosthetic tooth systems

InactiveUS6854972B1Decrease heightIncrease heightDental implantsCemento-enamel junctionDental implant
A one-piece dental implant having a longitudinal axis comprises a head portion at a first end of the implant, a tip portion at a second end of the implant and a body portion between the head portion and the tip portion. The body portion has a first portion proximate the head portion with a plurality of longitudinal grooves substantially parallel to the longitudinal axis and a second portion proximate the tip portion having a substantially circumferential groove, wherein the outer diameter of the first portion is greater than the outer diameter of the second portion. The first and second portions are for being embedded in the jaw bone. The dental implant is preferably dimensioned to conform to the natural shape of the cervical ⅓ of the root of the tooth being replaced, and to the natural relationship between the cemento-enamel junction of the tooth being replaced and to minimize adverse immunological responses by the jaw bone during healing, thereby improving the aesthetic appearance of the implant and prosthetic tooth attached thereto. A dental implant and prosthetic tooth system is also disclosed, wherein the prosthetic tooth conforms to the shape of the cervical ⅓ of the crown of the tooth being replaced. A method for implanting a dental implant through use of a reference, is also disclosed.
Owner:ELIAN NICHOLAS

Multi-layer gate stack structure comprising a metal layer for a fet device, and method for fabricating the same

A multi-layer gate stack structure of a field-effect transistor device is fabricated by providing a gate electrode layer stack with a polysilicon layer, a transition metal interface layer, a nitride barrier layer and then a metal layer on a gate dielectric, wherein the transition metal is titanium, tantalum or cobalt. Patterning the gate electrode layer stack comprises a step of patterning the metal layer and the barrier layer with an etch stop on the surface of the interface layer. Exposed portions of the interface layer are removed and the remaining portions are pulled back from the sidewalls of the gate stack structure leaving divots extending along the sidewalls of the gate stack structure between the barrier layer and the polysilicon layer. A nitride liner encapsulating the metal layer, the barrier layer and the interface layer fills the divots left by the pulled-back interface layer. The nitride liner is opened before the polysilicon layer is patterned. As the requirement for an overetch into the polysilicon layer during the etch of the metal layer, the barrier layer and the interface layer is omitted, the height of the polysilicon layer can be reduced. The aspect ration of the gate stack structure is improved, the feasibility of pattern and fill processes enhanced and the range of an angle under which implants can be performed is extended.
Owner:NAN YA TECH +1

Multi-layer gate stack structure comprising a metal layer for a FET device, and method for fabricating the same

A multi-layer gate stack structure of a field-effect transistor device is fabricated by providing a gate electrode layer stack with a polysilicon layer, a transition metal interface layer, a nitride barrier layer and then a metal layer on a gate dielectric, wherein the transition metal is titanium, tantalum or cobalt. Patterning the gate electrode layer stack comprises a step of patterning the metal layer and the barrier layer with an etch stop on the surface of the interface layer. Exposed portions of the interface layer are removed and the remaining portions are pulled back from the sidewalls of the gate stack structure leaving divots extending along the sidewalls of the gate stack structure between the barrier layer and the polysilicon layer. A nitride liner encapsulating the metal layer, the barrier layer and the interface layer fills the divots left by the pulled-back interface layer. The nitride liner is opened before the polysilicon layer is patterned. As the requirement for an overetch into the polysilicon layer during the etch of the metal layer, the barrier layer and the interface layer is omitted, the height of the polysilicon layer can be reduced. The aspect ration of the gate stack structure is improved, the feasibility of pattern and fill processes enhanced and the range of an angle under which implants can be performed is extended.
Owner:NAN YA TECH +1
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