19520 results about "Cobalt" patented technology

Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN′-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N′-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

A process for the selective production of ethylene by vapor phase reaction of acetic acid over a hydrogenating catalyst composition to form ethylene in a single reaction zone is disclosed and claimed. In an embodiment of this invention reaction of acetic acid and hydrogen over either a copper supported on iron oxide, copper-aluminum catalyst, cobalt supported on H-ZSM-5, ruthenium-cobalt supported on silica or cobalt supported on carbon selectively produces ethylene in a vapor phase at a temperature in the range of about 250° C. to 350° C.

Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.

A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the substrate, forming an opening in the insulating layer to expose at least a portion of the first conductive material, depositing a second conductive material over the insulating layer and within the opening, removing portions of the second conductive material to form a conductive area within the opening, recessing the conductive area within the opening to a level below an upper surface of the insulating layer, forming a cap of a third conductive material over the recessed conductive area within the opening, the third conductive material selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, depositing a stack of a chalcogenide based memory cell material over the cap, and depositing a conductive material over the chalcogenide stack.

Protective caps residing at an interface between copper lines and dielectric diffusion barrier layers are used to improve various performance characteristics of interconnects. The caps, such as cobalt-containing caps or manganese-containing caps, are selectively deposited onto exposed copper lines in a presence of exposed dielectric using CVD or ALD methods. The deposition of the capping material is affected by the presence of carbon-containing contaminants on the surface of copper, which may lead to poor or uneven growth of the capping layer. A method of removing carbon-containing contaminants from the copper surface prior to deposition of caps involves contacting the substrate containing the exposed copper surface with a silylating agent at a first temperature to form a layer of reacted silylating agent on the copper surface, followed by heating the substrate at a higher temperature to release the reacted silylating agent from the copper surface.

A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of a cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO₄); wherein the ruthenium-containing film comprises a ruthenium-metal alloy. Semiconductor device structures including ruthenium-metal alloys deposited by the methods of the disclosure are also disclosed.

Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than 850° C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

The invention includes processes for combined polymer surface treatment and metal deposition. Processes of the invention include forming an aqueous solution containing a metal activator, such as an oxidized species of silver, cobalt, ruthenium, cerium, iron, manganese, nickel, rhodium, or vanadium. The activator can be suitably oxidized to a higher oxidation state electrochemically. Exposing a part to be plated (such as an organic resin, e.g. a printed circuit board substrate) to the solution enables reactive hydroxyl species (e.g. hydroxyl radicals) to be generated and to texture the polymer surface. Such texturing facilitates good plated metal adhesion. As part of this contacting process sufficient time is allowed for both surface texturing to take place and for the oxidized metal activator to adsorb onto said part. The part is then contacted with a reducing agent capable of reducing the metal activator to a lower ionic form, or a lower oxidation state. That reduction can result in the formation of metallic catalytic material over the surface of the part. The reduced metal activator can then function to catalyze the electroless deposition of metal such as copper from solution by contacting the part with the plating solution.

A method for preparation of alcohols by catalytic hydrogenation of carbonyl compounds with hydrogen or hydrogen-containing gases in the presence of a hydrogenation catalyst of Raney type, where the catalyst is used in the form of hollow bodies, Preferred as catalytically active components are nickel, cobalt, copper, iron, platinum, palladium or ruthenium.

The present invention relates to compositions and methods for forming a bit body for an earth-boring bit. The bit body may comprise hard particles, wherein the hard particles comprise at least one carbide, nitride, boride, and oxide and solid solutions thereof, and a binder binding together the hard particles. The binder may comprise at least one metal selected from cobalt, nickel, and iron, and at least one melting point reducing constituent selected from a transition metal carbide in the range of 30 to 60 weight percent, boron up to 10 weight percent, silicon up to 20 weight percent, chromium up to 20 weight percent, and manganese up to 25 weight percent, wherein the weight percentages are based on the total weight of the binder. In addition, the hard particles may comprise at least one of (i) cast carbide (WC+W2C) particles, (ii) transition metal carbide particles selected from the carbides of titanium, chromium, vanadium, zirconium, hafnium, tantalum, molybdenum, niobium, and tungsten, and (iii) sintered cemented carbide particles.

Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

A process to produce terephthalic acid is provided, the process including the steps of: providing a feed stream comprising a dialkyl substituted aromatic and in an organic acid solvent: contacting the feed stream with an oxidant, the oxidant containing at least 50% by volume oxygen and at an oxygen partial pressure of at least 1 psia, at a temperature between about 80 DEG C. and about 130 DEG C., in the presence of a catalyst system comprising zirconium and cobalt, wherein the contacting is done in a stirred tank reactor; removing from the stirred tank reactor a vapor stream comprising the organic acid, water vapor and unreacted oxidant; condensing at least a portion of the organic acid and water from the vapor stream; separating at least a portion of the water from the organic acid back to the stirred tank reactor; returning at least a portion of the condensed organic acid back to the stirred tank reactor; continuously recovering from the stirred tank reactor a product comprising a diacid substituted aromatic; isolating solid crystals of diacid substituted aromatic from the reactor product; and recovering from the solid crystals a diacid substituted aromatic having a purity of preferably at least 97% by weight.

In a method of forming a semiconductor device, and a semiconductor device formed according to the method, an insulating layer is provided on an underlying contact region of the semiconductor device. An opening is formed in the insulating layer to expose the underlying contact region. A seed layer is provided on sidewalls and a bottom of the opening, the seed layer comprising cobalt. A barrier layer of conductive material is provided in a lower portion of the opening, the seed layer being exposed on sidewalls of an upper portion of the opening. A metal layer is provided on the barrier layer in the opening to form an interlayer contact, the metal layer contacting the seed layer at the sidewalls of the upper portion of the opening.

A magnetoresistive sensor having a novel free layer and a method of producing the same are disclosed. The magnetoresistive sensor comprises a pinned layer, a barrier layer disposed over the pinned layer, and a free layer disposed over the barrier layer. The free layer comprises a first magnetic layer disposed over the barrier layer. The first magnetic layer has a positive spin polarization, a positive magnetostriction, and a polycrystalline structure. The free layer further comprises a second magnetic layer disposed over the first magnetic layer. The second magnetic layer has a negative magnetostriction and comprises at least cobalt (Co) and boron (B).

The invention provides a method for preparing lithium cobaltate by directly using an invalid lithium ion battery. The method comprises the following steps: crushing the invalid lithium ion battery or scraps generated when a lithium cobaltate battery is produced by a mechanical crusher at normal temperature; adding water and one or more of acetic acid, sulfuric acid, hydrochloric acid or nitric acid to produce mixed aqueous solution of the battery scraps and acid; filling the mixed aqueous solution into a hermetic pressure reactor, and controlling the temperature in the reactor to be between 50 and 150 DEG C; introducing or adding one leaching additive of sulfur dioxide or hydrogen, or adding hydrazine hydrate; stirring and leaching, cooling, and filtering; adding one precipitator of sodium carbonate, potassium carbonate and ammonium carbonate, or adding composite precipitator consisting of one of the sodium carbonate, the potassium carbonate and the ammonium carbonate and one of sodium hydroxide and potassium hydroxide to obtain mixture of lithium carbonate, cobalt carbonate and cobalt hydroxide; drying and calcining at high temperature to produce a lithium cobaltate product. The method is particularly suitable for the treatment scale of medium-sized and small enterprises, and is an effective method for directly materializing cobalt secondary resources.