176 results about "Cobalt silicide" patented technology

Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.

Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16 protrudes from the semiconductor substrate 10, and a sidewall 24 is formed over a side wall portion of the protruding portion. A body trench 25 is formed in alignment with an adjacent gate electrode 16. A cobalt silicide film 28 is formed over a surface of the gate electrode 16 and over a surface of the body trench 25. A plug 34 is formed using an SAC technique.

The present invention provides a method for forming an interconnect to a cobalt or nickel silicide having a TiN diffusion barrier. The inventive method comprises providing an initial structure having vias to exposed silicide regions positioned on a substrate; annealing the initial structure in a nitrogen-containing ambient, wherein a nitrogen passivation layer is formed atop the exposed silicide region; depositing Ti atop the nitrogen passivation layer; annealing the Ti in a nitrogen-containing ambient to form a TiN diffusion barrier and an amorphous Ti cobalt silicide between the TiN diffusion layer and the cobalt or nickel silicide and depositing an interconnect metal within the vias and atop the TiN diffusion barrier. The nitrogen passivation layer substantially restricts diffusion between the Ti and silicide layers minimizing the amorphous Ti cobalt silicide layer that forms. Therefore, the amorphous Ti cobalt or Ti nickel silicide is restricted to a thickness of less than about 3.0 nm.

The present invention provides methods for forming cobalt silicide layers, including introducing a vaporized cobalt precursor onto a silicon substrate to form a cobalt layer. The vaporized cobalt precursor has the formula Co2(CO)6(R1—C≡C—R2), wherein R1 is H or CH3, and R2 is H, t-butyl, methyl or ethyl. The silicon substrate is thermally treated so that silicon is reacted with cobalt to form a cobalt silicide layer. Methods for manufacturing semiconductor devices including the cobalt silicide layers described herein and such devices are also provided.

Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

A fusible link formed on a semiconductor substrate. The fusible link comprises a silicide layer overlying a polysilicon layer. The fusible link is programmed to an open state by passing a current therethrough that opens the polysilicon and the silicide layers.