The invention provides a preparation method of a
semiconductor structure, which comprises the following steps of: forming a glass substrate which is provided with at least M first grooves which are sunken relative to a first surface, filling red fluorescent
powder or green fluorescent
powder or yellow fluorescent
powder in each groove, arranging a water-
oxygen isolation layer and a glue bonding layer on the fluorescent powder, and arranging a
rough surface on a second surface; forming M chips on the growth substrate, wherein first surfaces of the M chips are provided with a first
electrode and a second
electrode; bonding the surfaces, on which the electrodes are prepared, of the M chips with the temporary substrate, and removing the growth substrate; the M chips are rearranged into an array of I * J groups of
chip modules, and each group of
chip modules comprises N chips; transferring the rearranged array into a first groove in the glass substrate and solidifying the rearranged array; a first insulating layer is formed on the surface of a
chip on a glass substrate, holes are formed in a first
electrode and a second electrode corresponding to the first insulating layer, a conductive
interconnection structure is manufactured, the first electrode or the second electrode forms a common electrode, each common electrode corresponds to one chip module, and if the second electrode forms the common electrode, the conductive
interconnection structure is manufactured. The common electrode and each first electrode are mutually independent; and
cutting the glass substrate to form I * J groups of chip modules.