162 results about "Tandem cell" patented technology

The invention relates to the technical field of solar cells, and provides a laminated cell and a manufacturing method thereof, which are at least beneficial to improving the efficiency of the laminated cell. The laminated cell comprises a crystalline silicon bottom cell, a middle layer and a perovskite top cell which are sequentially laminated in a preset direction, the middle layer comprises a conductive composite layer, the conductive composite layer is located on the surface, facing the perovskite top cell, of the crystalline silicon bottom cell, and materials of the conductive composite layer comprise a conductive polymer and a metal dopant; the metal grid layer is embedded into one side, far away from the crystalline silicon bottom battery, of the conductive composite layer, and the conductive composite layer exposes the surface, far away from the conductive composite layer, of the metal grid layer; the barrier layer is located on the side, away from the composite layer, of the metal grid layer and covers the surfaces of the metal grid layer and the conductive composite layer.

The invention discloses a back contact cell and a preparation method thereof, a laminated cell and a photovoltaic module, and belongs to the technical field of photovoltaics, the back contact cell comprises a substrate, the substrate comprises a first region, a second region and a spacer region located between the first region and the second region, and a tunneling oxide layer and a doped polycrystalline silicon layer are arranged in the first region and the spacer region. The doped polycrystalline silicon layer is arranged on the surface, deviating from the substrate in the thickness direction, of the tunneling oxide layer, the amorphous silicon passivation layer and the doped amorphous silicon layer are arranged in the second region and the spacer region, and the doped amorphous silicon layer is arranged on the surface, deviating from the substrate in the thickness direction, of the amorphous silicon passivation layer. And the amorphous silicon passivation layer in the spacer region is positioned on one side, deviating from the substrate along the thickness direction, of the doped polycrystalline silicon layer. The insulating layer is arranged between the amorphous silicon passivation layer and the doped polycrystalline silicon layer, the insulating layer comprises a first insulating part which extends in the thickness direction and is arranged at the junction position of the second region and the spacer region, the first insulating part can prevent the back contact cell from leaking electricity in the horizontal direction, and the overall electrical performance of the back contact cell is improved.

The invention relates to a photovoltaic cell preparation method, a photovoltaic cell, a laminated cell and a photovoltaic cell module. Providing an initial battery piece; depositing and forming a protective layer on the surface; carrying out laser treatment twice; printing and sintering to form an electrode; and carrying out at least two times of laser-assisted sintering on the electrode. According to the photovoltaic cell preparation method, the protection layer at the first area is removed, the doping concentration at the first area is improved, and at least two times of laser-assisted sintering are combined, so that on one hand, the metal contact area is optimized, the usage amount of silver paste is reduced, the material cost is reduced, and meanwhile, paste contact sintering is enhanced; damage caused by laser grooving doping is removed; and on the other hand, the doping concentration is optimized, the contact resistance is remarkably reduced, the open-circuit voltage and the filling factor are favorably improved, the shading loss is reduced, and the current collection efficiency is ensured, so that the photoelectric conversion efficiency and the reliability of the cell are remarkably improved, the production process is simplified, and the production cost is reduced.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

The invention provides a main-grid-free back contact solar cell, a solar laminated cell and a photovoltaic module, and relates to the technical field of photovoltaics, the main-grid-free back contact solar cell comprises a first fine grid, an edge welding spot and a middle welding spot, the edge welding spot is located at the edge of the main-grid-free back contact solar cell and arranged on the first fine grid, and the middle welding spot is located at the edge of the main-grid-free back contact solar cell and arranged on the first fine grid. The plurality of middle welding spots are arranged between two adjacent edge welding spots along the first direction, the plurality of middle welding spots are respectively arranged on the corresponding first fine grids, and the edge welding spots comprise first ends facing the middle welding spots and second ends deviating from the middle welding spots along the first direction; the first end is electrically connected with the middle welding point adjacent to the first end through a first connecting line, the second end is electrically connected with the first fine grid adjacent to the second end through a second connecting line, and the width of the second connecting line is larger than that of the first connecting line. The above design improves the current transmission capability and current transmission efficiency of the solar cell, thereby improving the reliability and photoelectric conversion efficiency of the solar cell.

The present invention discloses a two-terminal perovskite-silicon tandem cell and a preparation method thereof, which are applied to the technical field of perovskite solar cells. The two-terminal perovskite-silicon tandem cell includes a tandem cell sheet, and the tandem cell sheet includes a perovskite cell structure for absorbing visible light and a silicon cell structure for absorbing near-infrared light. A near-infrared light conversion layer is provided on the light-incident side surface of the two-terminal perovskite-silicon tandem cell, and the near-infrared light conversion layer is a down-conversion thin film. By converting the short wave in sunlight into a long wave through the near-infrared light conversion layer, the problem of current mismatch caused by the two-terminal perovskite-silicon tandem cell under the illumination condition with a relatively high proportion of visible light is solved, so that the two-terminal perovskite-silicon tandem cell has high performance.

According to the crystalline silicon perovskite laminated cell and the preparation method thereof disclosed by the invention, a metal seed thin layer with a grid line pattern is introduced between a transparent conductive film and a grid line electrode of the laminated cell, so that on one hand, the contact resistance between the grid line electrode and the transparent conductive film can be greatly reduced; the contact resistance is reduced to 5% of the original contact resistance compared with that of a cell without a metal seed thin layer; and on the other hand, the binding force between the grid line and the transparent conductive film is improved, so that the ultralow-temperature curing slurry and the transparent conductive film can be fully bonded. In conclusion, the metal seed thin layer with the grid line pattern is introduced to achieve the purpose of improving the conversion efficiency and the stability of the crystalline silicon / perovskite laminated cell at the same time.

The invention relates to the photovoltaic field, and provides a solar cell, a laminated cell and a photovoltaic module. The solar cell comprises a substrate, a doped conductive layer, a first grid line and a second grid line. The doped conductive layer is located on the substrate; the first grid line is located on the substrate and is in electric contact with the doped conducting layer, the orthographic projection of the first grid line on the substrate is in a wave shape or a sawtooth shape with a plurality of inflection points, and the first grid line comprises a plurality of first sections and second sections which are alternately distributed; the distance between adjacent inflection points in the first section along the first direction is smaller than that between adjacent inflection points in the second section along the first direction; the second grid line is located on the substrate, extends in the second direction and is connected with the first section. The performance of the solar cell can be improved at least.

The invention relates to the technical field of photovoltaic cells, in particular to a back contact cell, a back contact laminated cell and a photovoltaic module. The back contact battery comprises a body, and a fine grid and a bonding pad which are arranged on the backlight surface of the body. The fine grid comprises a first fine grid and a second fine grid which extend along a first direction, the bonding pad comprises a first bonding pad and a second bonding pad which are distributed along the first direction, the first bonding pad is connected with the first fine grid, and the second bonding pad is connected with the second fine grid. The second fine grid comprises a first grid line and a penetrating grid line which are arranged in the second direction, the projection of the first bonding pad and the projection of the first grid line in the first direction have an overlapping part, a gap is reserved between the first bonding pad and the first grid line in the first direction, and the penetrating grid line is connected with the second bonding pad. The first connecting line is connected with the first grid line and the penetrating grid line, the width of the first grid line is smaller than that of the penetrating grid line, the width of the penetrating grid line is increased, the current transmission capacity of the penetrating grid line can be improved, and the output power of the back contact battery can be improved.

This application provides a perovskite-crystalline silicon tandem solar cell and its preparation method. In one implementation, a perovskite-crystalline silicon tandem solar cell includes a crystalline silicon solar cell, a serial connection structure layer, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer, and an upper transparent electrode layer. The first carrier transport layer includes a base layer and resistance-increasing nano structures distributed on the base layer. The resistance-increasing nano structures are integrally formed with the base layer. The resistance-increasing nano structures extend from the carrier transport layer base layer into the perovskite light absorption layer.

The invention relates to a solar cell and a manufacturing method thereof, a laminated cell and a photovoltaic module. The solar cell comprises a substrate which is provided with a first surface and a second surface which are oppositely arranged; the first doping layer is located on one side of the first surface; the first sub-diffusion layer is positioned on one side, far away from the substrate, of the first doping layer; the second sub-diffusion layer is located on the side, away from the substrate, of the first sub-diffusion layer; wherein the first doping layer, the first sub-diffusion layer and the second sub-diffusion layer are all provided with a first doping element, and the doping concentration of the first doping element in the first sub-diffusion layer is smaller than that of the first doping element in the second sub-diffusion layer. The photoelectric conversion efficiency of the solar cell can be improved.

The embodiment of the invention relates to the technical field of semiconductors, and provides a solar cell, a preparation method, a laminated cell and a photovoltaic module, the solar cell comprises a substrate, the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface comprises a first region and a second region which are arranged at an interval along a first direction, the first region comprises an emitter, and the second region comprises a second electrode; the emitter is electrically connected with the first electrode; the first surface is provided with a suede structure, the surface of the suede structure comprises a top surface and a side surface, the top surface is arc-shaped, the side surface is a curved surface, the surface of the suede structure further comprises a plurality of bulges, the bulges are granular or sphere-like, and the first direction is perpendicular to the thickness of the substrate. The solar cell provided by the embodiment of the invention at least can improve the photoelectric conversion efficiency of the solar cell.

The present invention relates to the technical field of solar cells, and particularly relates to a perovskite / silicon heterojunction tandem solar cell and a preparation method thereof. The solar cell includes a silicon-based sub-cell and a perovskite sub-cell laminated on the silicon-based sub-cell, where intermediate layers or recombination junctions formed by a p-type heavily-doped amorphous silicon layer and an n-type heavily-doped amorphous silicon layer are arranged between the silicon-based sub-cell and the perovskite sub-cell. According to the present invention, through the use of the p-type heavily-doped amorphous silicon layer and the n-type heavily-doped amorphous silicon layer as a carrier recombination junction, on the one hand, the preparation and equipment costs are greatly reduced, and on the other hand, the photocurrent density and conversion efficiency of the tandem cell can be improved.

This application relates to the field of photovoltaic cell technology, and more particularly to a back-contact cell, a back-contact tandem cell, and a photovoltaic module. The back-contact cell includes a body, a fine grid, a first pad, a first connecting line, and edge grid lines. The fine grid includes a first fine grid and a second fine grid. The first connecting line and the first fine grid are electrically connected to the first pad, and the second fine grid is insulated from the first pad. The second fine grid includes a first grid line and a plurality of second grid lines arranged along a second direction. The first grid line and the first connecting line are arranged along the second direction, and the second grid lines and the first connecting line are arranged along a first direction. In the first direction, the fine grid is located on one side of the edge grid lines. Both the first and second grid lines are electrically connected to the edge grid lines, improving the brightness uniformity of EL testing and the output power of the back-contact cell. Furthermore, in the first direction, the length of the first grid line is not less than the sum of the lengths of the plurality of second grid lines to improve the current transmission capability of the first grid line, thereby increasing the output power of the back-contact cell.

The invention belongs to the field of laminated cells, and relates to a perovskite laminated cell and a preparation method thereof, light parasitism can be reduced, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite, a first tunneling oxide layer is arranged on the first surface, and a second tunneling oxide layer is arranged on the second surface. A first passivation layer is arranged on the first tunneling oxide layer, or a first doped crystalline silicon conductive layer and the first passivation layer are arranged on the first tunneling oxide layer, and the first doped crystalline silicon conductive layer is provided with a plurality of first opening regions exposing the first tunneling oxide layer or the substrate; the first passivation layer covers the surface of the first doped crystalline silicon conductive layer and the surface of the first opening region; and the top perovskite cell is arranged on the first passivation layer and is electrically connected with the bottom crystalline silicon cell.

The invention relates to a back contact solar cell, a laminated cell and a photovoltaic module. The back contact solar cell comprises a cell main body and a functional layer, the functional layer is arranged on a light receiving surface of the cell main body, the functional layer comprises a first light conversion layer, a second light conversion layer, a first light storage layer and a second light storage layer which are stacked, one of the first light conversion layer and the second light conversion layer comprises a light up-conversion material, and the other of the first light conversion layer and the second light storage layer comprises a light up-conversion material. One of the first light conversion layer and the second light conversion layer includes a light down-conversion material, the other of the first light conversion layer and the second light conversion layer includes a light down-conversion material, one of the first light storage layer and the second light storage layer includes an infrared region long afterglow material, and the other of the first light storage layer and the second light storage layer includes an ultraviolet visible region long afterglow material. According to the back contact solar cell, the light absorption efficiency can be effectively improved, and power generation can be realized when illumination is weak.

This application relates to the field of solar cell technology, providing a solar cell and its manufacturing method, a tandem cell, and a photovoltaic module, which at least improves the benefit of laser-assisted sintering of sectional cells in terms of contact resistance. The manufacturing method includes: providing a solar cell, the solar cell including opposing first and second surfaces; forming a first grid on the first surface and a second grid on the second surface; irradiating the first surface of the solar cell with a first laser and applying a first voltage to the first and second grids; cutting the solar cell to divide it into at least two sectional cells, and passivating the cut surfaces of the sectional cells; irradiating at least a portion of the first surface of the sectional cells with a second laser and applying a second voltage to the first and second grids; wherein the energy density of the second laser is less than the energy density of the first laser, and / or the second voltage is less than the first voltage.

The present disclosure relates to the technical field of solar cells, and in particular, to a large-area perovskite / silicon-based tandem cell structure and a preparation method therefor. The large-area perovskite / silicon-based tandem cell structure comprises: a silicon substrate cell; a first transport layer located on a side of the silicon substrate cell; a perovskite layer, located on the side of the first transport layer away from the silicon substrate cell; a second transport layer located on the side of the perovskite layer away from the silicon substrate cell; a buffer layer, located on the side of the second transport layer away from the silicon substrate cell; a transparent conductive layer, located on the side of the buffer layer away from the silicon substrate cell, the transparent conductive layer comprising at least one first transparent conductive layer and at least one second transparent conductive layer, the first transparent conductive layer being located between the buffer layer and the second transparent conductive layer, and the density of the first transparent conductive layer being less than the density of the second transparent conductive layer; and electrodes, formed by means of screen printing or inkjet printing on the side of the transparent conductive layer away from the silicon substrate cell.

The present application belongs to the field of perovskite / crystalline silicon tandem cells. Disclosed are a perovskite / crystalline silicon tandem cell and a preparation method therefor. The perovskite / crystalline silicon tandem cell comprises a bottom cell and a top cell, wherein the bottom cell uses a crystalline silicon wafer as a substrate, an interface passivation layer, a first doped silicon layer, a first transparent conductive oxide film layer and a metal conductive film layer are sequentially provided on the back surface of the bottom cell, and an interface passivation layer, a second doped silicon layer and an intermediate composite layer are sequentially provided on the front surface of the bottom cell; the top cell uses a perovskite light-absorbing layer as a light-absorbing layer, a first carrier transport layer is provided on the back surface, and a second carrier transport layer, a second transparent conductive oxide film layer and a metal grid line electrode are sequentially provided on the front surface; and an amorphous germanium layer is provided between the second doped silicon layer and the intermediate composite layer, thereby enhancing the tunneling conductivity between the second doped silicon layer and the intermediate composite layer, reducing the interfacial contact resistance, and improving the FF and conversion efficiency of the cell.

The invention provides a wide-band-gap perovskite solar cell and a band gap regulation and control method thereof.The band gap of a perovskite material is regulated and controlled by adding a B-site cation doping agent into a perovskite precursor solution, the B-site cation doping agent comprises one or more of bismuth ions, antimony ions, cerium ions and yttrium ions, and the B-site cation doping agent comprises one or more of the bismuth ions, the antimony ions, the cerium ions and the yttrium ions. And the doping ratio of the B-site cation doping agent is 0.5% to 10%. According to the invention, bismuth ions # imgabs 0 # antimony ions # imgabs 1 # cerium ions # imgabs 2 # and yttrium ions # imgabs 3 # B-site cations are doped, the usage amount of Br <-> in halogen ions is reduced, the energy band structure of the perovskite material is optimized, and the band gap of the perovskite material is adjusted, so that the structure of the material is optimized, the performance of the material is improved, and the stability and photoelectric conversion efficiency of the laminated cell are improved.

The invention discloses a four-end laminated solar cell based on ultra-wide-band-gap perovskite and a preparation method of the four-end laminated solar cell. The four-end laminated solar cell based on the ultra-wide-band-gap perovskite comprises a top cell and a bottom cell, wherein the top cell is an ultra-wide-band-gap perovskite solar cell of which the band gap is not less than 2.0 eV. According to the invention, the problem of low utilization rate of the bottom cell in the existing perovskite-based four-terminal laminated cell can be solved, and the overall photoelectric conversion efficiency of the solar cell can be synergistically improved. According to the invention, the band gap characteristic of the ultra-wide band gap perovskite solar cell is used, and high-energy photons are fully absorbed and utilized to generate high open-circuit voltage; meanwhile, the light absorption of the bottom cell can be enhanced, and the photoelectric conversion efficiency of the bottom cell is effectively exerted; in addition, the damage of ultraviolet rays to the performance of the bottom cell is avoided. Therefore, the efficiency and the stability of the solar cell can be synergistically improved, and the application prospect is good.

This application relates to the photovoltaic field, providing a solar cell and its fabrication method, a tandem solar cell, and a photovoltaic module. The solar cell includes a substrate; a tunneling dielectric layer located on the surface of the substrate; a doped conductive layer located on the surface of the tunneling dielectric layer; a fluorinated silicon oxide layer located on the surface of the doped conductive layer, the fluorinated silicon oxide layer having a mesoporous structure; a passivation layer located on the surface of the fluorinated silicon oxide layer; and an electrode electrically connected to the doped conductive layer. The solar cell, its fabrication method, the tandem solar cell, and the photovoltaic module provided by this application can at least improve the PID (Potential Influence of Processing) problem.

The invention provides a perovskite laminated cell and a preparation method thereof. The perovskite laminated cell comprises a bottom cell, a tunneling composite layer and a perovskite top cell which are sequentially laminated, the tunneling composite layer comprises a first TCO layer and a second TCO layer which are stacked in sequence; the first TCO layer contains a hydrogen element; the surface of the second TCO layer is provided with hydroxyl groups; the perovskite top cell comprises a first charge transport layer, a perovskite light absorption layer, a second charge transport layer and an electrode which are stacked. The first charge transport layer is connected with the second TCO layer, the first charge transport layer is provided with a passivation group, and the passivation group and a hydroxyl group on the surface of the second TCO layer form a covalent bond. According to the invention, under the synergistic effect of the first TCO layer and the second TCO layer, efficient tunneling recombination can be realized, and the stability and efficiency of a cell device are greatly improved.

This invention provides a crystalline silicon / perovskite tandem solar cell and its fabrication method. Applied to perovskite / crystalline silicon tandem solar cells, the method involves preparing a first and second edge passivation layer after the buffer layer and transparent electrode layer are fabricated. This improves the protection effect on the edge cut surfaces of the tandem cell, reducing the risk of erosion, damage, or impurity penetration of the thin film in the crystalline silicon / perovskite tandem cell. The resulting edge protection structure also improves the uniformity and continuity of the deposited transparent conductive layer and metal grid lines in the edge region, reducing the potential leakage risk of the thin film layer, lowering parallel resistance loss, and improving the device's fill factor and open-circuit voltage. By setting two edge passivation layers for protection, the negative impact of each transparent electrode deposition and metal grid line fabrication process on sensitive edge regions can be reduced, significantly improving device stability and photoelectric conversion efficiency.

This application relates to the field of solar cell technology, and in particular to a solar cell, photovoltaic module, and tandem cell. The solar cell includes a substrate and a passivation layer covering the substrate. The substrate has a first surface and a second surface disposed opposite to each other along the thickness direction. The first surface includes a first textured region and a second textured region. At least one adjacent region of the first textured region and the second textured region is provided with a trench structure. There is no emitter below the second textured region. The trench structure can separate the first textured region and the second textured region, reducing the probability that photogenerated carriers generated at any position in the first textured region will cross the structure and enter the second textured region, thereby reducing the recombination rate of carriers. As a geometric transition design, the trench structure can effectively coordinate the deformation between different textured regions and reduce stress concentration caused by local stiffness differences. The second textured region has a lower doping concentration, which can reduce the recombination probability of carriers and is beneficial to improving photoelectric conversion efficiency.

This application discloses a perovskite / crystalline silicon tandem solar cell, its fabrication method, photovoltaic module, and photovoltaic system. The perovskite / crystalline silicon tandem solar cell includes a crystalline silicon bottom cell, an intermediate connecting layer, and a perovskite top cell stacked sequentially. A first oxide barrier layer is stacked between the crystalline silicon bottom cell and the intermediate connecting layer; a second oxide barrier layer is stacked between the intermediate connecting layer and the perovskite top cell. The density of the first and second oxide barrier layers is greater than that of the intermediate connecting layer. This invention introduces oxide barrier layers with higher density on both sides of the intermediate connecting layer, achieving physical-level material exchange isolation: on the one hand, it can block organic ions migrating from the perovskite from interacting with OH groups in the intermediate connecting layer. ‑ The reaction inhibits the decomposition of the perovskite interface and also prevents the diffusion and escape of hydrogen from the amorphous silicon layer in the bottom cell under stress, thereby significantly improving the stability of the perovskite / crystalline silicon tandem cell.

This disclosure relates to the field of solar cell technology, and more specifically, to a tandem solar cell and its fabrication method. It includes a first solar cell with an N / P selective contact structure and a second solar cell containing alternating electron transport layers and hole transport layers. A selective tunneling dielectric layer is disposed between the N / P selective contact structure and the hole transport layers and electron transport layers; wherein the selective tunneling dielectric layer comprises alternating phosphorus-doped Al. x O y Zone and boron-doped Al x O y The N-region and the electron transport layer are respectively disposed on phosphorus-doped Al. x O y The P-region and the hole transport layer are respectively located on opposite sides of boron-doped Al. x O y The two sides of the area are opposite each other. This tandem solar cell can improve the current matching conditions structurally while maintaining the high energy conversion efficiency of the tandem cell, thereby solving the problem of current mismatch between the top and bottom cells in the aforementioned tandem cell.

Provided in the present invention are a rear-surface-passivated CIGS single-junction cell and interconnected cells thereof and a preparation method therefor, and a CIGS / PVK double-junction tandem cell and a preparation method therefor. The CIGS single-junction cell comprises a substrate, and a back electrode, an absorption layer, a buffer layer, a high barrier layer, a front electrode and grid lines which are sequentially formed, wherein a discontinuous passivation layer is deposited between the back electrode and the absorption layer. The preparation method for the CIGS single-junction cell comprises: depositing a back electrode on a substrate; forming a suspension from nanoparticles, coating the suspension onto the back electrode to form a wet film, and conducting annealing, so as to form a passivation layer; and sequentially depositing an absorption layer, a buffer layer, a high barrier layer, a front electrode layer and grid lines on the passivation layer. The CIGS / PVK double-junction tandem cell comprises a bottom CIGS single-junction cell and a top perovskite cell, the two forming an integral body by means of the interconnection of two or four internal ends thereof. Further provided in the present invention is a passivation method for interconnected CIGS single-junction cells. P1, P2 and P3 scribe lines are arranged inside the CIGS single-junction cell. The rear-surface-passivated cell provided by the present invention reduces rear surface recombination and improves photoelectric efficiency.

The invention relates to the technical field of solar cells, and mainly provides a crystalline silicon / perovskite laminated cell, a preparation method thereof and a photovoltaic module. The preparation method of the crystalline silicon / perovskite laminated cell comprises the following steps: forming a transparent metal oxide layer on a perovskite top cell substrate; processing the first region of the transparent metal oxide layer by adopting a hydrogen plasma process to form a metal layer; and preparing a metal electrode on the metal layer. According to the technical scheme of the invention, the crystalline silicon / perovskite laminated cell has low contact resistance.

This invention discloses a perovskite / crystalline silicon tandem solar cell and its fabrication method, belonging to the field of perovskite / crystalline silicon tandem solar cells. It includes a bottom cell and a top cell. The bottom cell uses a crystalline silicon wafer as a substrate, with an interface passivation layer, a first doped silicon layer, a first transparent conductive oxide film layer, and a metal conductive film layer sequentially disposed on its back side. An interface passivation layer, a second doped silicon layer, and an intermediate composite layer are sequentially disposed on its front side. The top cell uses a perovskite light-absorbing layer as the light-absorbing layer, with a first carrier transport layer disposed on its back side. A second carrier transport layer, a second transparent conductive oxide film layer, and a metal grid electrode are sequentially disposed on its front side. An amorphous germanium layer is disposed between the second doped silicon layer and the intermediate composite layer, enhancing the tunneling conductivity between them, reducing the interface contact resistance, and improving the cell's flyback effect (FF) and conversion efficiency.