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7 results about "Square Centimeter" patented technology

A unit of area measurement equal to a square measuring one centimeter on each side. One square centimeter is equal to 10E-4 square meter.(NCI)

Multi-floor building structure

A multi-floor building structure having pillars (1), and at least one horizontal structure (5), made of engineered wood, an upper horizontal layer (10) and a lower horizontal layer (20), made of engineered wood segments structurally adhered together providing structural continuity at least in the longitudinal and transversal horizontal directions (LD, TD) across the entire horizontal structure (5), and vertically separated and rigidly connected through an array of intersected longitudinal and transversal vertical ribs (31, 32); wherein the thickness and / or the load-resistance per square centimeter of the upper and / or lower horizontal layers (10, 20) increases, in a gradual or stepped manner, with the proximity to the vertical through holes (3); and / or the thickness, the load-resistance per square centimeter and / or the proximity between successive longitudinal vertical ribs and (31) successive transversal vertical ribs (32) increases, in a gradual or stepped manner, with the proximity to the vertical through holes (3).
Owner:PHYLEM STRUCTURES SL

Method for improving structure uniformity of medium-thickness-wall X52N line pipe

The invention relates to a structure uniformity control method for a medium-thickness-wall X52N pipeline pipe. A heating mode of long preheating, short heating and low soaking is adopted for heating a pipe blank in an annular furnace. And the hole is punched in a short punching mode, the diameter expanding rate is 9%-10%, and the steel pipe ductility is 170%-225%. In the continuous rolling procedure, a PQF rolling mill is adopted for rolling, and the rolling speed is reduced; and the steel pipe subjected to sizing is cooled by adopting annular water cooling. According to the method, subsequent heat treatment is not needed, uniform ferrite and pearlite structures can be obtained only by reasonably controlling the heating schedule, the rolling process parameters such as perforation, continuous rolling and sizing and the cooling path, the overall grain size of the whole wall thickness is larger than or equal to 7.0 grades, the difference between the maximum grain size and the minimum grain size within the range of per square centimeter is not larger than 1.0 grade, no bainite structure exists, and the method is suitable for large-scale production. No obvious banded structure exists, and the structure uniformity and the performance stability of the medium-thickness-wall pipeline pipe are improved.
Owner:ANGANG STEEL CO LTD

How to use a shell-type vacuum suction port

PendingJP2026137324ASuction forceLaser light
This invention provides a process for manufacturing molded thermoplastic sheets using a formed shell-shaped mold. [Means for Solving the Problem] A method for using a shell mold manufactured by: a pattern groove forming step of forming a pattern groove in a shell mold prototype; a vacuum suction hole forming step of irradiating the same position on the back side of the shell mold prototype where the pattern groove position is formed on the shell mold prototype with laser light multiple times under different conditions to form a vacuum suction hole in which the hole diameter on the back side of the shell mold is at least twice the hole diameter on the front side of the shell mold; a thermoplastic sheet placement step of placing a thermoplastic sheet on the surface of the shell mold; a heating step of heating the thermoplastic sheet at a temperature between 100°C and 220°C; and a suction step of applying a vacuum suction force on the back side of the shell mold at a rate of -0.01 kilograms per square centimeter to -1.5 kilograms per square centimeter.
Owner:KTX CORPORATION

Waterproof and breathable sound production dome with nano-microsphere layer of more than 50 mu

The invention discloses a waterproof, breathable and sound-producing spherical roof with a nano-microsphere layer of more than 50 mu. The waterproof, breathable and sound-producing spherical roof is prepared by the following steps: irradiating and bombarding a rigid and tough material of more than 50 mu by using a heavy ion beam to form a heavy ion nuclear track membrane down-hole base material, etching the down-hole base material to obtain micron pores with the pore diameter of more than 1.5 mu m, and carrying out sound production on the micron pores to obtain the waterproof, breathable and sound-producing spherical roof. And a substrate having a number of more than 100,000 pores per square centimeter. The micron-hole base material is coated with the nano-microsphere waterproof breathable layer formed by stacking nano-microsphere spherical linkage, the oleophobic and hydrophobic layer with the breathable function is arranged on the nano-microsphere waterproof breathable layer, the waterproof grade can reach 50 m or above, and the loudspeaker sounding globe roof which is waterproof, breathable, oleophobic, hydrophobic, high in mechanical strength, good in rigidity and high in toughness is obtained. The rigidity of the spherical roof used as a loudspeaker sounding spherical roof is met, and the spherical roof used as a deep waterproof self-pressure-relief loudspeaker product has waterproof, breathable, oleophobic, hydrophobic, rigid and toughness requirements of tearing resistance under deep water and high pressure.
Owner:DONGGUAN HEYU ELECTRONIC TECH CO LTD

Large-area Micromechanical Exfoliation Method Based on Graphical GaN-based Epitaxial Layers

ActiveCN114975118BGraphicsWafering
The present invention discloses a large-area micro-mechanical peeling method based on a patterned GaN-based epitaxial layer. By covering a two-dimensional material on the surface of an epitaxial substrate to grow a GaN-based epitaxial layer, after epitaxial growth, the GaN-based epitaxial layer is patterned into small patterns on the order of square centimeters. At the same time, the hard mask layer in the patterning process is used as a stress layer to achieve large-area non-destructive peeling of the GaN-based epitaxial layer in a micro-mechanical peeling manner. This method utilizes the weak bonding force between the two-dimensional material and the substrate and the epitaxial layer, or between two-dimensional material layers, and overcomes the problem of uneven stress distribution inside large-size wafers caused by two-dimensional material defects by patterning the GaN-based epitaxial layer into small patterns of a certain area, realizing large-area peeling of the GaN-based epitaxial layer and reusing the epitaxial substrate. Therefore, while realizing high-quality large-area peeling of the GaN-based epitaxial layer, the present invention has the advantages of simple process, good process compatibility, and low cost.
Owner:BEIJING UNIV OF TECH