8results about "Charge amplifiers" patented technology

Provided is a weak-signal reading circuit for a sensor, comprising a sensing signal input amplifying unit and a signal reading unit. The sensing signal input amplifying unit comprises a first transistor, wherein a gate and a drain of the first transistor are connected with a sensor; the signal reading unit is connected to a source of the first transistor, the first transistor is turned on when the sensor generates a sensing signal, so that the sensing signal is captured by the signal reading unit. When the sensor senses a signal and generates a voltage, the first transistor tends to be switched on, then the signal reading unit reads the sensing signal through the first transistor which has been turned on, that is, by providing the first transistor, the weak-signal reading circuit for sensor can be self-driven according to the voltage generated by the sensor without an extra drive circuit, thereby achieving low power consumption.

A charge amplifier circuit (10) for a capacitive sensing arrangement (80), the charge amplifier circuit (10) including: an first amplifier stage (20) including a first amplifier input (22), a second amplifier input (23) connectable to the capacitive sensing arrangement (80), and including a first amplifier output (24) and a second amplifier output (25), a second amplifier stage (30) including a first amplifier input (32), a second amplifier input (33), a first amplifier output (34) and a second amplifier output (35), and a switched capacitor arrangement (40) between the first amplifier stage (20) and the second amplifier stage (30), the switched capacitor arrangement (40) including a first integration capacitor (42), a second integration capacitor (43), a number of first switches (66, 67) and a number of second switches (68, 69).

The application discloses a high-count-rate bipolar dynamic adjustable charge amplification circuit structure and a use method thereof. The high-count-rate bipolar dynamic adjustable charge amplification circuit structure comprises a current attenuator, a charge-sensitive preamplifier, an adaptive leakage current compensation circuit and an SPI module. The current attenuator is used for reversing and attenuating an input negative charge signal. The charge-sensitive preamplifier is used for integrating and amplifying an obtained external positive charge signal or a positive charge signal output by the current attenuator. The adaptive leakage current compensation circuit is used for compensating a leakage current injected into an input end of the charge-sensitive preamplifier due to introduction of the current attenuator. The SPI module is connected with the current attenuator to control selection gears of the current attenuator. Therefore, the high-count-rate bipolar dynamic adjustable charge amplification circuit structure can complete high-precision charge measurement of each gear in a full dynamic range through the charge-sensitive preamplifier, the current attenuator and the adaptive leakage current compensation circuit, can effectively reduce area overhead while ensuring precision, and is convenient for multi-channel integration.

A detection signal processing apparatus configured to process detection signals received from a detector for identifying the presence of one or more substances of interest in a sample, the apparatus comprising: a detection signal coupling arranged to receive detection signals from said detector; an amplifier and an integration capacitor, the amplifier having inputs, with at least one input being connected to the detection signal coupling; and ringing circuitry capacitively coupled to at least one of the inputs of the amplifier and being selectively operable to apply a ringing signal to said at least one of the inputs of the amplifier to cause amplifier protection circuitry of the amplifier to reset the integration capacitor.

The application discloses a kind of based on multi-chip splicing's detector and signal processing method related to the technical field of synchrotron radiation and X-ray spectroscopy, detector includes: detector array module includes a plurality of semiconductor detection chips arranged on substrate, to seamlessly splicing mode arrangement forms continuous detection surface, for converting received incident radiation signal into charge signal;Packaging module is used to provide temperature control and environmental isolation for detector array module Working environment;Readout circuit module is electrically connected to detector array module, for preamplification to the charge signal output by detector array module and conversion into voltage signal;Digital signal processing module is used for digital processing to voltage signal, and is configured with parallel processing logic respectively for executing pulse pile-up discrimination and energy extraction processing.The surface array detector and signal processing method can realize stable collection and high-precision energy information acquisition of incident radiation signal under high count rate conditions.

Reducing a spring softening effect on a capacitive sense element of an electromechanical sensor is presented herein. A system, such as a microphone or an accelerometer, comprises an electromechanical sensor and a voltage-to-voltage converter component. The electromechanical sensor comprises a capacitive sense element and a bias voltage component that applies a bias voltage to a sense electrode of the capacitive sense element. The voltage-to-voltage converter component couples a positive feedback voltage to the sense electrode to maintain a constant charge at the sense electrode to facilitate a reduction of charge flow in the electromechanical sensor representing a spring softening effect on the capacitive sense element. In an example, the spring softening effect on the sense element alters a resonant frequency of the sense element and a gain of the sense element. In another example, the charge flow corresponds to a parasitic capacitance that is electrically coupled to the sense electrode.