The invention provides a high-frequency-selectivity radio-frequency front end suitable for nano-scale. The front end comprises a high-frequency input matching network, a lower-
noise transconductor, a load network and a passive 
frequency mixer, wherein the passive 
frequency mixer is arranged on an output node of the input matching network or the low-
noise transconductor or the load network; impedance conversion is adopted by the input matching network and the load network to realize high Q values and 
high frequency selectivity for filtering out-of-band interference; a radio-frequency 
signal is filtered by using the high-Q-value input matching network, and is then amplified by using the transconductor and the load of the high-Q-value load network which is subjected impedance conversion; a high-frequency 
signal is converted to a low-frequency 
signal by performing down-conversion with the passive 
frequency mixer for 
processing with an analog or digital 
baseband. The radio-frequency front end has the advantages of low 
power consumption, high image rejection ratio, high out-of-band 
linearity, strong 
gain configurability, no need of off-
chip SAW (
Surface Acoustic Wave) filter and the like, and is suitable for application to a future multifunctional integrated radio-frequency 
chip.