The invention provides a high-frequency-selectivity radio-frequency front end suitable for nano-scale. The front end comprises a high-frequency input matching network, a lower-
noise transconductor, a load network and a passive
frequency mixer, wherein the passive
frequency mixer is arranged on an output node of the input matching network or the low-
noise transconductor or the load network; impedance conversion is adopted by the input matching network and the load network to realize high Q values and
high frequency selectivity for filtering out-of-band interference; a radio-frequency
signal is filtered by using the high-Q-value input matching network, and is then amplified by using the transconductor and the load of the high-Q-value load network which is subjected impedance conversion; a high-frequency
signal is converted to a low-frequency
signal by performing down-conversion with the passive
frequency mixer for
processing with an analog or digital
baseband. The radio-frequency front end has the advantages of low
power consumption, high image rejection ratio, high out-of-band
linearity, strong
gain configurability, no need of off-
chip SAW (
Surface Acoustic Wave) filter and the like, and is suitable for application to a future multifunctional integrated radio-frequency
chip.