72results about How to "Low insertion loss" patented technology

The invention discloses a Ka-band waveguide three-way power divider, which belongs to the technical field of microwave and millimeter waves, and is characterized in that a combining port is formed in the front side wall of a shielding box, and three distribution ports are formed in the rear side wall of the shielding box; a coplanar magic T equal power divider, a coplanar magic T equal power combiner, a branch waveguide unequal power divider, an L-shaped waveguide, a Z-shaped waveguide and a half waveguide-full waveguide gradual change structure are arranged in the shielding box. Wherein the coplanar magic T equal power divider comprises an E-T junction waveguide cavity, two equal branch waveguide cavities, a microstrip probe and a power resistance load, and outputs two paths of signals with equal amplitude and opposite phases; the branch waveguide unequal power divider comprises a four-branch waveguide directional coupler and an inclined-wedge-shaped waveguide matching load, and the output power ratio of a straight-through output port to a coupling output port is 2: 1. The filter has the advantages of being symmetrical in structure, good in amplitude and phase consistency, small in insertion loss, good in port standing wave and high in isolation degree.

The invention discloses a high-power fast phase inversion switch based on a p-i-n diode, and relates to the technical field of high-power microwave p-i-n diode phase shifting. The inverter switch comprises a rectangular waveguide, 2N loading linear p-i-n diode phase shift circuits which are symmetrically and uniformly arranged on a narrow-side waveguide wall, and a bias power supply which provides bias voltage for the phase shift circuits. According to the invention, the loading line type p-i-n diode phase shift circuit is inserted into the waveguide structure, so that a microwave signal is transmitted along the waveguide transmission line instead of being transmitted along the metal microstrip line, the influence of the power loss of the p-i-n diode on the insertion loss of the phase shift circuit can be reduced, and the overall insertion loss is reduced; and meanwhile, phase inversion is realized by controlling the bias state of a p-i-n diode in the phase shift circuit, and nanosecond switching speed can be realized.

A homodyne detection Doppler wind measurement laser radar device based on a silicon optical chip comprises a light source module, a photoelectron chip module, a semiconductor optical amplifier, an erbium-doped optical fiber amplifier, an optical circulator, an optical transceiver antenna, a transimpedance amplifier processing module, an A / D acquisition card module, a digital signal processing module and a display and storage module. Discrete devices such as a beam splitter, a frequency mixer and a detector in an optical fiber link are integrated on one chip, high-density integration with other components is carried out through the photoelectric hybrid packaging technology, and chipping and miniaturization of the all-optical-fiber wind finding radar are achieved. The semiconductor optical amplifier (SOA) is used for chopping, a homodyne detection method is used for eliminating the requirement for frequency shift, and compared with a traditional Doppler wind measurement laser radar, the Doppler wind measurement laser radar has the advantages of being small in power consumption, small in size, light in weight, high in integration level, convenient to produce in a large scale, low in cost of a single device and the like.

The invention discloses a parallel MEMS switch of a terahertz wave band, and belongs to the field of radio frequency front-end devices. The antenna is composed of a first-layer metal patch, a middle-layer dielectric plate, a second-layer metal patch, a high-resistance bias line, a dielectric film, a metal pier and a third-layer metal patch which are stacked from bottom to top. Wherein the first layer of metal patch is an integral metal ground; the middle dielectric plate is an integral dielectric layer; the second layer of metal patch comprises a coplanar waveguide signal ground, a coplanar waveguide signal line, a direct current bias electrode and a switch driving electrode; and the third layer of metal patch comprises a switch metal beam and a CPW closed bridge. The lower driving electrode of the switch is covered with a dielectric film with a larger area, the middle section of the CPW signal ground is provided with a section of lifting bridge, and the direct current bias line is wired through the bridge and connects the lower electrode of the switch to the direct current bias electrode.

The invention provides a cable-free network structure and an antenna system, and belongs to the technical field of communication. The cable-free network structure comprises a reflecting plate; the first phase shifting module comprises a power division phase shifting network and a corresponding first phase shifting medium group, the power division phase shifting network is provided with a first input port and a plurality of first output ports, the first input port is used for receiving signals, and the plurality of first output ports are used for outputting equal phase differences; the second phase shifting module comprises a plurality of two-way power dividers and corresponding second phase shifting medium groups, each two-way power divider comprises a second input port and two second output ports, the second input ports are connected with the first output ports, and the second output ports are used for sending signals; and the transmission mechanism respectively drives the first phase shifting medium group and the second phase shifting medium group to move at a preset displacement ratio so as to realize equal-phase-difference output in the same period. The cable-free network structure provided by the invention can simply realize equal-phase-difference output in the same period.

The invention provides a device and method for preparing a high-temperature-resistant multi-period fiber grating. The device comprises a femtosecond laser, a shutter, a variable attenuator, a cylindrical lens, a phase mask plate, a broadband light source, an optical fiber and a spectrograph. A femtosecond laser pulse emitted by the femtosecond laser passes through the cylindrical lens and the phase mask plate and forms interference fringes; different tensile forces are applied to the two ends of the optical fiber, the interference fringes are focused on an optical fiber core for inscribing, and the tensile forces are released after grating inscribing; the operation is repeated, the tension is released after each time of inscribing, and a plurality of fiber bragg gratings with different periods can be generated on a single optical fiber; therefore, the multi-period fiber grating array capable of monitoring the distributed temperature is formed.

The mechanical optical switch is suitable for switching of one-input and multiple-output optical path switches, the optical path switches are in butt joint with multiple optical fibers, the mechanical optical switch comprises a shell of a hollow structure, and a primary optical path adjusting assembly, a secondary optical path adjusting assembly and an optical window are arranged in the shell. Input light is transmitted to the primary light path adjusting assembly through the light window, the primary light path adjusting assembly is used for adjusting light path parameters of the input light, and the input light is input into part of components in the secondary light path adjusting assembly and is subjected to beam shrinking and focusing treatment through the secondary light path adjusting assembly. And the light beams subjected to beam shrinking and focusing processing are transmitted to the corresponding optical fibers, so that the light transmission efficiency is improved.

The invention provides an optical connector device including a pair of connectors including a first connector and a second connector. The optical connector device is capable of allowing a position offset of an optical fiber in at least a plane direction orthogonal to an axial direction. Wherein the first connector comprises an inner shell and an outer shell; the inner housing holds the first optical fiber unit. The inner housing is held by the outer housing so as to be floatable in the axial direction and in a plane direction orthogonal to the axial direction. The inner shell is provided with a first abutting part. The connector housing has a second contact portion on a connection side of the first connector and the second connector. When the first connector and the second connector are connected, the first abutting part and the second abutting part are in surface contact, and the first optical fiber and the second optical fiber are arranged along the connection direction.

The application relates to the technical field of phased array radars, in particular to a phased array radio frequency front-end circuit. The circuit comprises a front-stage processing module, a first-stage power division network, an intermediate-stage bidirectional amplification network, a second-stage power division network and a final-stage multifunctional network which are sequentially electrically connected; an external radio frequency signal input end is electrically connected with an input end of the front-stage processing module; the first-stage power division network has four first branch output ends which are respectively electrically connected with input ends of the intermediate-stage bidirectional amplification network; an output end of the intermediate-stage bidirectional amplification network is electrically connected with an input end of the second-stage power division network; the second-stage power division network has sixteen second branch output ends which are respectively electrically connected with input ends of the final-stage multifunctional network. The phased array radio frequency front-end circuit of the application adopts a multistage power division network and a topological structure, reduces the insertion loss in the multiway signal distribution process, and meets the packaging demand of miniaturization of the phased array front end.

This invention discloses a wideband, high-isolation single-pole five-throw switch chip, comprising six ports, two power ports, five control ports, twenty microstrip lines, one capacitor C1, twenty-five switching transistors, twenty-five gate resistors, and five voltage control modules. The six ports are port 1, port 2, port 3, port 4, port 5, and port 6; port 1 is the RF input port; ports 2, 3, 4, 5, and 6 are output ports. The RF input and output ports are connected via the two power ports, five control ports, twenty microstrip lines, one capacitor C1, twenty-five switching transistors, twenty-five gate resistors, and five voltage control modules. Compared to existing single-pole five-throw switches, this invention is integrated on a single chip, offering the advantage of small size. The use of voltage control modules significantly reduces the number of power supply modules, facilitating application.

The invention belongs to the technical field of microwaves, and particularly relates to a unit structure of a single-passband FSR, the single-passband FSR and an antenna housing, and the unit structure comprises an impedance layer and an FSS layer. The impedance layer comprises a first dielectric substrate, two double-helix resonance structures arranged on the two faces of the first dielectric substrate respectively, four connecting wires connected to the four ends of the two double-helix resonance structures respectively, and four resistors arranged on the first dielectric substrate and connected with the four connecting wires respectively. The T-shaped metal sheets are arranged on the dielectric substrate I and are respectively connected with the four resistors; and an FSS layer having a single square ring slot to construct a single transport band. According to the unit structure provided by the invention, the mode of vertical superposition of the double-layer structure of the impedance layer is used for enhancing the polarization stability, so that the insertion loss of the unit structure is greatly reduced, and the unit structure has stable dual-polarization characteristics and certain angle stability.

This invention provides a method for forming interdigitated electrodes, wherein the interdigitated electrodes are metal stacks. The method includes: providing a piezoelectric substrate; forming a metal material stack and a composite mask material layer on the piezoelectric substrate; the metal material stack includes a first metal material layer and a second metal material layer; the composite mask material layer includes a first mask material layer and a second mask material layer made of different materials; patterning the composite mask material layer to obtain a composite mask layer; the composite mask layer includes a first mask layer corresponding to the first mask material layer and a second mask layer corresponding to the second mask material layer; etching the first metal material layer using the composite mask layer as a mask to obtain a first metal layer, simultaneously consuming the first mask layer; and etching the second metal material layer using the second mask layer as a mask to obtain a second metal layer. This invention solves the problem that the interdigitated electrode material needs to be coated with a thick photoresist, and the unexpected reduction in photoresist thickness during the etching process makes it difficult to control the morphology of the interdigitated electrodes.

The application relates to a processor system. The processor system comprises a substrate, a processor arranged on the substrate, at least one first connector arranged on the substrate, each first connector being connected to the processor through a wire, at least one function expansion card, the function expansion card being provided with a second connector and a function device, the function device being connected to the second connector through a wire, and the second connector being connected to the first connector through a cable. The method can relieve the problem of crowded space of a mainboard.

The invention discloses a low-slow small aircraft target reconnaissance and interference integrated device, and the device comprises a plurality of receiving and transmitting antennas which are used for obtaining a collection signal, and transmitting an interference signal after the signal amplification; the high-power switches are connected with the transceiving antennas in a one-to-one correspondence manner and are used for switching received and transmitted signals; the microwave transceiving unit is connected with the high-power switch and is used for acquiring the acquired signal and filtering the acquired signal; the signal processing unit is connected with the microwave transceiving unit and is used for processing the filtered acquisition signal to obtain a target signal and a trigger interference signal and transmitting the target signal and the trigger interference signal to the microwave transceiving unit; and the microwave power amplifier is connected with the microwave transceiving unit and the high-power switch and is used for amplifying the interference signal. Through the scheme, the device has the advantages of simple structure, high sensitivity, accuracy, reliability and the like, and has very high practical value and popularization value in the technical field of reconnaissance interference.

The invention discloses a 3D waveguide type multi-core optical fiber link monitor which comprises an optical chip platform with n layers of stacked waveguide structures and a photoelectric detector, n is larger than or equal to 2, and the number n of waveguide layers of the optical chip platform is equal to the number of layers of connected multi-core optical fibers. The cross section distribution of waveguides in the optical chip platform and the cross section distribution of fiber cores of the multi-core optical fiber are the same and are in one-to-one correspondence; a waveguide channel corresponding to each fiber core of the multi-core optical fiber in the optical chip platform comprises an optical fiber signal coupling fan-out module, an optical signal beam splitting module, an optical signal monitoring module and a multi-core optical fiber signal coupling fan-in module which are connected in sequence; after an optical signal of a multi-core optical fiber transmitting end is coupled by the fan-out module, a small part of the signal is separated by the beam splitting module through a waveguide coupling effect and is used for monitoring, and most of the signal is transmitted back to a transmission link through the fan-in module; and the monitoring module realizes real-time detection through a photoelectric detector. According to the invention, no extra optical fiber fan-in / fan-out module is needed, the insertion loss is low, and the device is not sensitive to polarization.

The present invention discloses a low dielectric constant multifunctional electronic moisture-proof coating composition, and relates to the technical field of electronic materials and protective coatings, the composition comprises: a component A: 15-35% of a reaction type fluorine-silicon hybrid oligomer; the component B comprises 2%-8% of surface modified nanosheet barrier filler; the component C comprises 50%-75% of a green cosolvent system; the component D comprises 0.5%-3% of a multifunctional epoxy silane coupling agent; and the component E comprises 1%-5% of a photo-thermal dual-curing initiation system. The problems that in the prior art, the VOC emission of a fluorine-containing solvent is high, the compactness is insufficient due to filler sedimentation, and the water vapor permeability is high in a high-damp-heat environment are solved, through the quaternary synergistic effect, the low dielectric constant, high hydrophobicity, excellent moisture resistance and high adhesive force to various base materials are achieved, and the water-based paint is suitable for protection of high-frequency electronic devices.

The application provides a radio frequency switch circuit and a radio frequency chip, and the radio frequency switch circuit comprises a switch module, a gate voltage control module and a body voltage control module, wherein the switch module comprises a radio frequency switch transistor, the source of the radio frequency switch transistor and the drain of the radio frequency switch transistor are connected to each other to form a signal channel; the gate voltage control module is used for connecting the gate of the radio frequency switch transistor and providing an operating voltage for the radio frequency switch transistor; the body voltage control module is connected to the body of the radio frequency switch transistor and the gate of the radio frequency switch transistor respectively, and is used for dynamically adjusting the potential of the body of the radio frequency switch transistor according to the size of the operating voltage received by the gate of the radio frequency switch transistor. The application can effectively control the on-resistance and off-capacitance of the radio frequency switch circuit, thereby effectively improving the performance of the radio frequency switch.

The present application relates to the technical field of millimeter wave communication, and particularly relates to a V / W wave band low-loss metal waveguide and a preparation method thereof. The preparation method provided by the present application combines metal additive manufacturing, inner wall conductive metal deposition, super-smooth inner surface polishing and external single-point diamond turning technology. The waveguide manufactured by the composite process chain comprises an aluminum-magnesium (zirconium) alloy waveguide structure manufactured by laser beam melting additive manufacturing, a copper (silver) inner wall coating deposited by chemical reduction plating technology, an inner wall surface with a roughness of less than 50 nm Ra processed by abrasive flow machining, and a self-aligning flange with a flatness of less than 0.1 microns and a butt joint surface roughness of less than 20 nm Ra processed by super-precision machining. The present application improves the electrical performance, thermal interface consistency and assembly accuracy. The preparation method of the present application solves the problems of high insertion loss of the existing waveguide structure in high-frequency applications, high-cost mode coupling caused by large structural assembly errors, uncontrollable inner wall roughness and the like.

This application discloses a three-dimensional ultra-wideband power divider, belonging to the field of radio frequency communication technology. It includes an input port, a strongly coupled line unit, a weakly coupled line unit, a first output port, and a second output port. The input port, strongly coupled line unit, and weakly coupled line unit are connected sequentially. The first terminal of the second end of the weakly coupled line unit is connected to the first output port, and the second terminal of the second end of the weakly coupled line unit is connected to the second output port. The weakly coupled line unit includes any number of coupling lines and multiple first resistors, with the multiple first resistors bridging between two coupling lines of the weakly coupled line unit. The strongly coupled line unit is a three-dimensional integrated vertical substrate circuit structure. This application overcomes the contradiction between ultra-wideband, high isolation, low loss, and mass production through a three-dimensional integrated structure, gradually changing coupling lines, and a multi-level bridging resistor network, providing a high-performance power divider solution for high-frequency communication systems.

The invention discloses a multipath amplitude phase adjusting device, which comprises supports, PCBs, coupling scribing pieces and clamping devices, and is characterized in that the number of the supports is two, the PCBs are arranged on the wall surfaces of the two supports, and the wall surface of each PCB is provided with a plurality of branch slow-wave microstrip lines which are distributed at intervals; the plurality of branch slow-wave microstrip lines are concentrically arranged around a first shaft, the coupling slip sheet is arranged on the upper wall of the PCB, the coupling slip sheet is provided with a power amplifier network line matched with the microstrip lines, one end of the coupling slip sheet is pivotally mounted on the PCB through the first shaft of the clamping device, and the clamping device is used for driving the coupling slip sheet to swing around the first shaft as the axis. The position of the coupling slip sheet on the branch slow-wave microstrip line is adjusted; and the first shaft is provided with an input line matched with the power amplifier network line. Under the requirement of the same phase adjustment quantity, the branch slow-wave microstrip line and the coupling slip sheet are coaxially arranged. The arc track length required by using the slow-wave microstrip line is shorter than that required by using a common microstrip line or a cable.

The utility model relates to the technical field of radio frequency switches, in particular to a high-isolation absorption type single-pole eight-throw switch module which comprises a shell, a feed control board, a printed board, a power port, an input port and an output port, the printed board and the feed control board are arranged in the shell, the input port and the power port are arranged on a front panel, and the output port is arranged on a rear panel. The output ports are distributed on the back of the shell at equal intervals, a single-pole double-throw switch and two single-pole four-throw switches are arranged on the printed board, and the two single-pole four-throw switches are connected to the fixed ends of the single-pole double-throw switch. According to the utility model, low insertion loss can be maintained while high isolation is provided, and the filter is suitable for high-performance radio frequency and microwave systems.

The invention provides a broadband harmonic suppression matching circuit, a power amplifier and a power amplifier module, and the broadband harmonic suppression matching circuit comprises a first harmonic suppression and biasing circuit and a second harmonic suppression and biasing circuit, comprising a first circuit element and a ground capacitor which constitute a bias circuit, a second circuit element and a third circuit element which are connected with the first circuit element and constitute a resonant network, and the sum of the electrical lengths of the first circuit element and the second circuit element is lambda / 6; the second harmonic suppression and fundamental wave impedance matching circuit comprises a multi-order LC resonance network, the multi-order LC resonance network comprises a fourth circuit element and a fifth circuit element which are connected with the third circuit element in series, and the fourth circuit element and the fifth circuit element are used for completing in-band fundamental wave impedance matching; wherein each circuit element is a microstrip line or a lumped element.

This invention discloses an X-band synthetic aperture radar waveguide bandpass filter and radar, relating to the field of waveguide bandpass filter technology. In the waveguide bandpass filter of this invention, along the signal transmission direction, a standard rectangular waveguide WR-90 input structure, multiple resonant cavities, and a standard rectangular waveguide WR-90 output structure are connected sequentially. The standard rectangular waveguide WR-90 input structure is connected to the first resonant cavity through a coupling window, adjacent resonant cavities are connected through a coupling window, and the last resonant cavity is connected to the standard rectangular waveguide WR-90 output structure through a coupling window. Each resonant cavity is provided with a stub, and all stubs generate a transmission zero at the same frequency outside the passband. This invention takes into account the comprehensive performance requirements of miniaturized structure, wide operating bandwidth, and steep passband edge.

The present invention provides a high-power phase shifter circuit loaded with a short-circuited branch line, comprising an equivalent radio frequency circuit, the equivalent radio frequency circuit comprising a phase shift unit, a phase modulation unit 1, a phase modulation unit 2, a matching unit, a fourth PIN diode and a first capacitor, the cathode of the fourth PIN diode is connected to one end of the first capacitor, the anode is connected to the first radio frequency signal port and one end of the phase shift unit; the other end of the first capacitor is connected to the second radio frequency signal input port and the other end of the phase shift unit; the phase shift unit has a first node, one end of the phase shift unit is connected to one end of the phase modulation unit 1 and the anode of the fourth PIN diode, and the other end is connected to one end of the phase modulation unit 2 and the other end of the first capacitor; the matching unit is arranged between the first node and the ground; the phase modulation unit 1 is connected between the anode of the fourth PIN diode and the ground, and the phase modulation unit 2 is connected between the other end of the first capacitor and the ground. A combined phase shift of large phase and small phase is achieved, and the insertion loss of all phase shift states is small.

This invention discloses a directional coupler with reconfigurable filtering characteristics that reuses resonant stubs, belonging to the field of microwave and millimeter-wave circuit technology. The coupler includes a main body consisting of a main transmission line, a coupling transmission line, and four ports. A serpentine resonant stub unit is connected in series on both the main and coupling transmission lines. Each resonant stub leads out an equivalent inductance stub and is connected to a reflective single-pole double-throw switch. The other end of each switch is connected to a variable capacitor. This invention allows the variable capacitor to be selectively connected to either the main or coupling resonant stub via switching, achieving time-division multiplexing of the resonant stubs and forming an adjustable parallel LC resonant circuit, resulting in two operating modes: when the capacitor is connected to the main path, both the main and coupling channels simultaneously possess low-pass filtering characteristics with continuously adjustable cutoff frequencies; when the capacitor is connected to the coupling channel, only the coupling channel is filtered, while the main channel achieves low insertion loss pass-through across the entire frequency band. This invention has the advantages of compact size, low insertion loss, and a wide filtering tuning range.

The invention belongs to a terahertz-band low-loss high-isolation MEMS switch, and belongs to the field of radio frequency front-end devices. The switch bridge pier structure is composed of a metal beam, an upper electrode through hole group, a trapezoidal connector, a contact, a silicon nitride capacitor insulating layer, a lower electrode, a silicon nitride electrode insulating layer, a coplanar waveguide microwave transmission line structure, a direct current bias high-resistance line, a gold wire, a gold PAD bonding pad patch, a dielectric substrate, a backboard metal ground, a grounding metal cylinder and a metal bridge. When feeding is carried out through the coplanar waveguide, the radio frequency characteristics of the switch in the on and off states are analyzed. When the switch is switched off, the isolation degree can reach-24.94 dB, and the low-insertion-loss high-isolation terahertz filter has the characteristics of low insertion loss and high isolation degree at high frequency, can be widely applied to the terahertz communication field, and can be applied to radio frequency devices such as microwave circuits and antennas. The switch adopts a single-layer metal beam design, is simple in structure and convenient to manufacture, and can be quickly etched and manufactured.

The application relates to the technical field of radio frequency microwave devices, in particular to a W-waveband wide-frequency RF MEMS multi-blade multi-pole switch which comprises a silicon substrate, a plurality of input / output ports and a MEMS cantilever beam switch unit, the MEMS cantilever beam switch unit is provided with a driving electrode, and the communication and disconnection of the radio frequency signal path between the corresponding input port and the output port can be controlled by applying voltage to the driving electrode. The application realizes the on-off of the radio frequency signal path by electrostatic driving control of the deformation of the cantilever beam, and the driving mode has the advantages of low power consumption, high speed and easy integration. Compared with the common single-blade structure, the application can realize more complex signal routing in a compact unit, improves the system integration and functional flexibility, realizes interference-free crossing by using the slot structure through the horizontal swing type structure and the vertical lifting type structure, significantly reduces the high-frequency parasitic effect, and ensures the transmission quality of the millimeter wave signal in the W waveband.

The utility model relates to the technical field of mass spectrometer electronic components, and provides an ion source electrode lead connecting terminal, which comprises a binding post, a blind hole arranged in the binding post, and a conductor embedded in the blind hole, and the conductor comprises a plurality of conducting strips uniformly arranged at intervals and positioning rings arranged at two ends of the conducting strips. The middle ends of the conducting strips protrude towards the side away from the inner wall of the blind hole, multi-point contact pressure is provided when an electrode lead pin is inserted through the arranged conductors, stable and reliable electrical connection is ensured, meanwhile, the problems that in the prior art, a cross-shaped slotting structure is prone to denaturation, breakage and contact breakage are solved, fluctuation of contact resistance is reduced, and the service life of the electrode lead pin is prolonged. And the current transmission uniformity is improved.

The utility model relates to a radio frequency module. The radio frequency module provided by the embodiment of the utility model comprises a radio frequency switch circuit, two paths of uplink paths and two paths of downlink paths, the radio frequency switch circuit is configured to select one path from the two paths of uplink paths and the two paths of downlink paths for conduction so as to send signals through the uplink paths or receive signals through the downlink paths; the radio frequency switch circuit comprises a switch stack series-parallel structure; under the condition that the switch stack series-parallel structure comprises the switch stacks connected in series, the order number of the switch stacks connected in series is larger than the order number of other switch stacks. According to the embodiment of the invention, the isolation and linearity of the radio frequency module can be remarkably improved, and the insertion loss is reduced while the power capacity is improved.

The present invention relates to a terahertz harmonic extraction technology, and in particular to an on-chip low insertion loss dual-frequency transformer for terahertz harmonic extraction, comprising a primary coil and a secondary coil stacked from bottom to top, wherein two ports of the primary coil are respectively a differential fundamental frequency signal and a positive phase fundamental frequency signal P in + and negative phase fundamental frequency signal P in The two ports of the secondary coil are the differential harmonic signal and the positive phase harmonic signal P out + and negative phase harmonic signal P out ‑output port; the primary coil and the secondary winding are a co-centered octagonal structure. The dual-frequency transformer can change the coupling degree between the primary and secondary coils by setting different inner diameters, so that the dual-frequency transformer presents high-pass filtering characteristics, thereby effectively extracting terahertz harmonic signals from high-frequency signals. It has the advantages of simple structure, small insertion loss, small size, and low manufacturing cost, and has extremely high application value in on-chip terahertz signal source generation circuits.