28 results about "Parasitic structure" patented technology

A differential feed dual-polarization super-directivity array antenna comprises a plurality of array units, and each array unit comprises a supporting structure, a main radiator, a metal floor and a radiation parasitic structure. The metal floor is arranged below the supporting structure, the main radiator is arranged in the supporting structure, the radiation parasitic structure is arranged above the supporting structure, and the main radiator is connected with a metal coaxial connector arranged on the metal floor through the feeder line structure. According to the invention, a dual-polarization radiation mode is realized by adopting two pairs of differential port feed structures, and an array design scheme with a super-directivity characteristic can be realized under two polarizations, so that the directivity upper limit value of a traditional aperture antenna scheme is broken through, and the capacity and the performance of a communication system are remarkably improved.

The invention discloses an MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated device of a parasitic super rectifier. The MOSFET integrated device comprises an MOS (Metal Oxide Semiconductor) epitaxial layer, an MOS trench gate, a body region, a source region, an isolating layer, a contact hole and a contact island region, the contact hole comprises an SBR structure region and a metal column; the SBR structural region comprises an SBR epitaxial layer and an SBR gate dielectric layer; the body region is in ohmic contact with the metal column through the body contact region and is further connected with the metal column and the SBR gate dielectric layer. On the other hand, the invention discloses a manufacturing method of the device. The manufacturing method comprises the following steps: manufacturing the MOS trench gate on the epitaxial layer; setting a body region, a source region, an isolation layer and a contact hole; arranging a first dielectric layer on the side wall of the contact hole; setting a contact island area; depositing an SBR epitaxial layer; setting a body contact area; etching the first dielectric layer and the SBR epitaxial layer to form an SBR structure region; and arranging a metal column and a metal layer. The parasitic structure does not independently occupy the cellular structure of the active region, and each MOS cell is provided with adjacent contact holes with the parasitic structure, so that the effective performance is improved.

An antenna provided in this application may include a first element, a second element, a decoupling stub, a first parasitic structure, and a second parasitic structure. The decoupling stub is connected to the first element and the second element, there is a first gap between the decoupling stub and the first element, there is a second gap between the decoupling stub and the second element, the first parasitic structure is disposed in the first gap, and the second parasitic structure is disposed in the second gap.

The invention discloses an MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated device of a parasitic super rectifier. The MOSFET integrated device comprises an MOS (Metal Oxide Semiconductor) epitaxial layer, an MOS trench gate, a body region, a source region, an isolating layer and a contact hole, the contact hole comprises an SBR structure region and a metal column; the SBR structural region comprises a bottom dielectric layer, an SBR metal gate and an SBR gate dielectric layer; the body region is in ohmic contact with the metal column through the body contact region and is further connected with the metal column and the SBR gate dielectric layer. On the other hand, the invention discloses a manufacturing method of the device. The manufacturing method comprises the following steps: manufacturing the MOS trench gate on the epitaxial layer; setting a body region, a source region, an isolation layer and a contact hole; arranging a bottom dielectric layer and a first dielectric layer in the contact hole; depositing an SBR metal gate; setting a body contact area; etching the first dielectric layer and the SBR metal gate to form an SBR structure region; and arranging a metal column and a metal layer. The parasitic structure does not independently occupy the cellular structure of the active region, and each MOS cell is provided with adjacent contact holes with the parasitic structure, so that the effective performance is improved.

The invention belongs to the technical field of semiconductor devices, and particularly relates to a multi-channel SOI LIGBT device. Comprising a first conductive type epitaxial layer and an isolation groove located on the outer side; an emitter second conductive type well region I, an emitter second conductive type well region II and a collector first conductive type buffer layer are arranged on the first conductive type epitaxial layer; wherein the first second conductive type well region of the emitter is located in the second conductive type deep well region, a first conductive type doped region is arranged in the second conductive type deep well region, and the first conductive type doped region is located between the isolation groove and the second conductive type deep well region. According to the invention, the second conductive type deep well region is introduced on the basis of a traditional multi-channel SOI LIGBT device, so that the capability of extracting storage carriers of the device is improved under a turn-off condition; by arranging the first conductive type doped region, a current path is compressed, the current concentration phenomenon at the corner of the device is relieved, and the risk of starting a parasitic structure is reduced.

This invention discloses a millimeter-wave wide-beam DRA, a wide-angle beam scanning phased array, and their design methods. The DRA consists of a DR and a microstrip coupling slot located directly below the DR. This invention enables the non-exciteable DRA to achieve TE by setting the dimensions of the slot and the DR. 112 The resonant frequency of the mode is close to that of the slot operating mode, and the field inside the DR will exhibit a similar behavior to that of the TE mode. 112 The field distribution of the mode forms an equivalent magnetic current parallel to the ground plane, thereby achieving wide beam characteristics in the E-plane and H-plane; moreover, arranging multiple such small-sized DRA units at equal intervals can form a linear phased array in the E-plane (H-plane), whose beam can be scanned from -72° to +72° (-65° to +65°), with a gain ripple of 2.5dB (0.5dB), and the present invention does not require any parasitic structures or additional active control circuits.

The invention discloses a high-gain ultra-wideband dual-polarized antenna with a filtering characteristic, and belongs to the technical field of communication equipment, and the antenna comprises an antenna radiation layer which is printed on a first dielectric substrate and comprises four annular units, and the four annular units are arranged in a four-leaf clover shape on a horizontal plane; the parasitic structure layer is printed on the second dielectric substrate and arranged above the antenna radiation layer in parallel, the parasitic structure layer comprises a circular patch and four sections of arc rings, the circular patch is located at the center of the second dielectric substrate, and the four sections of arc rings are evenly distributed around the circular patch; and the reflection cavity comprises a bottom plate and four reflection walls, the four reflection walls are vertically connected with four edges of the bottom plate to form a semi-open cavity, and the antenna radiation layer and the parasitic structure layer are arranged in the reflection cavity. The antenna covers all 5G communication frequency bands between 1.7 GHz and 3.7 GHz, gain attenuation in a passband is gentle, the antenna has the functions of ultra wide band, high gain and filtering, and the antenna is simple in structure and convenient to process and assemble.

This invention discloses a structure and method for achieving wide-bandwidth beam characteristics based on an open-circuit resonator, solving the problems of wide-bandwidth angular domain, compact structure, and low cost compatibility in radar detection. The parasitic structure proposed in this invention is an open-circuit resonator array, composed of stacked subarrays of different frequency bands that are interconnected and cover the antenna's frequency band. The method includes designing the parasitic structure; stacking and assembling the arrays according to the number and frequency bands of the antenna stator arrays; combining the parasitic structure with the antenna; and achieving wide-bandwidth beam characteristics. This invention utilizes the omnidirectional radiation characteristics of the open-circuit resonator to form an array, extending the antenna's beamwidth over a wide range. The open-circuit resonator unit is relatively small, and this invention achieves beam extension functionality within a compact space, exhibiting miniaturization characteristics, and can be applied to small computers and UAVs. This invention prints the open-circuit resonator on the surface of a dielectric substrate, allowing for integrated design with the antenna, significantly reducing design, manufacturing, and installation costs.

This application relates to the field of antenna technology, disclosing an antenna and a communication device. The antenna includes a main board, a radiating structure, a parasitic structure, and a feeding structure. The radiating structure is disposed on the main board and includes high-frequency stubs and low-frequency stubs. The parasitic structure is disposed on the main board and includes high-frequency parasitic stubs and low-frequency parasitic stubs. The high-frequency parasitic stubs are electromagnetically coupled to each other, and the low-frequency parasitic stubs are also electromagnetically coupled to each other. The feeding structure is connected to both the high-frequency and low-frequency stubs, providing electrical signals to them. Through this method, this application enables a single antenna to support communication needs from 2G to 5G and multiple Wi-Fi frequency bands.

The invention discloses a filtering grid slotted patch antenna with high sidelobe suppression and an antenna array, the upper surface of a first dielectric substrate of the filtering grid slotted patch antenna is provided with four square rings, and the lower surface of the first dielectric substrate is provided with four rectangular patches; the square ring and the rectangular patch are connected through a metal column to form a stacked metasurface structure, the upper surface of the second dielectric substrate is four arrow-shaped branch stripes, the upper surface of the third dielectric substrate is a metal ground, a rectangular gap is etched in the middle of the metal, the lower surface of the third dielectric substrate is a feed structure, and a forked microstrip feed network is adopted. The first dielectric substrate is connected with the middle dielectric substrate through a first bonding layer, and the second dielectric substrate is connected with the third dielectric substrate through a second bonding layer. Based on a fusion design method, the added parasitic structure does not occupy extra area, and the side lobe suppression capability of the filtering metasurface antenna can be improved, so that the filtering metasurface antenna has potential application value in improving the communication stability in a millimeter wave system.

The application discloses a dual-frequency dual-port directional diagram reconfigurable antenna loaded with a parasitic structure and relates to the technical field of reconfigurable antennas. The antenna comprises a dielectric substrate, two pairs of printed dipole antennas, a feed network and a parasitic structure. The two pairs of printed dipole antennas are orthogonally arranged on the dielectric substrate and are respectively connected to a feed port one and a feed port two. The feed network comprises a central microstrip feed line and a parallel metal strip line. The parasitic structure is composed of a mixed array of square metal units and isosceles right triangle metal units. Each unit is arranged at equal intervals, the array is symmetrically arranged relative to the printed dipole, and a predetermined coupling interval is maintained between the array and the printed dipole. The application uses two pairs of orthogonally arranged printed dipole antennas for dual-port feeding, realizes azimuth angle plane beam switching, and is flexible in function realization.

This application relates to the field of communications technology and provides an antenna and a communication device for solving problems of insufficient isolation and narrow decoupling bandwidth. The antenna provided herein may include a first element, a second element, a decoupling stub, a first parasitic structure, and a second parasitic structure. The decoupling stub is connected to the first element and the second element, a first gap is between the decoupling stub and the first element, a second gap is between the decoupling stub and the second element, the first parasitic structure is disposed in the first gap, and the second parasitic structure is disposed in the second gap. When the first element and the second element are operating, a decoupling current may be generated in the decoupling stub, the first parasitic structure, and the second parasitic structure. The decoupling current is canceled out by an initial coupling current between the first element and the second element, creating an isolation null. This effectively improves the isolation and wideband decoupling performance between the first element and the second element.

The invention discloses a compact high-frequency-ratio dual-frequency antenna based on substrate integration. The compact high-frequency-ratio dual-frequency antenna comprises a lower-layer substrate and an upper-layer substrate. The lower substrate is provided with a microstrip line feed network and a cross-shaped gap. SIW cavities are arranged in four corner areas of the upper-layer substrate, a linear gap is etched in a grounding layer on the top surface of each cavity, and a patch and a square ring-shaped parasitic structure are arranged. The lower-layer cross-shaped gap and the upper-layer SIW cavity form a coupled feed structure, so that lower-layer radiation energy is coupled to the SIW cavity and the linear gap is excited to generate radiation. A unique double-layer structure and a coupling feeding mechanism are adopted, ultra-wideband and millimeter wave double-frequency-band work is achieved, and the ultra-wideband and millimeter wave dual-frequency-band antenna has the advantages of being compact in structure, high in isolation degree and capable of independently regulating and controlling performance and is suitable for a modern wireless communication system.

The present application relates to the field of low scattering array antenna, and particularly relates to a conformal dual-polarized low scattering array antenna. The scheme comprises a dielectric substrate 1, a dipole radiation patch 2, a parasitic patch 3, a wave absorbing material 4, a feed balun 5, and a metal floor 6. The dielectric substrate 1 is conformal to the outer skin of a platform. The dipole radiation patch 2 is printed on the upper surface of the dielectric substrate 1 after being shaped and hollowed. The parasitic patch 3 is printed on the lower surface of the dielectric substrate 1. The wave absorbing material 4 is attached to the lower surface of the dielectric substrate 1 and is conformal to the dielectric substrate 1. The feed balun 5 penetrates the dielectric substrate 1, the wave absorbing material 4 and the metal floor 6 and is connected to the two side radiation arms of the dipole radiation patch 2 respectively. The present application can effectively reduce the antenna scattering by shaping and hollowing the dipole radiation patch. The space below the dielectric substrate is loaded with a parasitic structure and a wave absorbing material, which can improve the standing wave performance and reduce the scattering. The present application is suitable for stealth platforms.

The invention provides a vertical polarization directional diagram reconfigurable antenna which is provided with a dielectric substrate I serving as a supporting base, and a dielectric substrate II and a dielectric substrate III which are of a cross structure are fixedly arranged in the center of the upper end face of the dielectric substrate I; a crossed elliptical monopole is arranged at the central position of the crossed dielectric substrate II and dielectric substrate III; the dielectric substrate II is provided with a zigzag line parasitic structure I and a zigzag line parasitic structure II which are bilaterally symmetrical; the dielectric substrate III is provided with a zigzag line parasitic structure III and a zigzag line parasitic structure IV which are bilaterally symmetrical; the center of the zigzag line parasitic structure I is provided with a PIN switching diode D1, the center of the zigzag line parasitic structure II is provided with a PIN switching diode D2, the center of the zigzag line parasitic structure III is provided with a PIN switching diode D3, and the center of the zigzag line parasitic structure IV is provided with a PIN switching diode D4. The dielectric substrate I1 is used for etching a direct current bias line; and the dielectric substrate II etches the rectangular ground. The antenna is simple in structure, facilitates integration, can achieve multi-beam switching and wide working frequency band at the same time, and is suitable for popularization.

The application discloses a broadband end-fire antenna integrated with photovoltaic cell pieces, which operates in a 3.81-8.97 GHz frequency band, and a single unit of the broadband end-fire antenna comprises a radiation main body, a feeder and a parasitic structure; the radiation main body is formed by connecting solar cell pieces in series and then connecting the series in parallel, and is located on the upper surface of a dielectric plate; the feeder is located on the lower surface of the dielectric plate and is used for feeding power, and the radiation main body is excited by a port; the parasitic structure is located below the outer side of the solar cell pieces in a series of solar cell pieces and is connected with the solar cell pieces, and is used for improving impedance matching. By introducing the parasitic structure, the broadband end-fire antenna can cover the 3.81-8.97 GHz frequency band and realize the performance of the broadband antenna. In addition, solar energy is fully utilized, the design of perpendicularization of the illumination direction and the communication direction of the antenna is realized, the relative bandwidth reaches 80.75%, and the system complexity is low.

The application discloses a differential feed dual-band dual-polarized microstrip filter antenna, which comprises three layers of dielectric substrates arranged in a top-down interval, and the lower surface of the first layer of dielectric substrate is loaded with an octagonal ring-shaped coupling parasitic structure; the upper surface of the second layer of dielectric substrate is printed with a rectangular radiation patch, the rectangular radiation patch is loaded with four unclosed rectangular slots which are square distributed and rotationally symmetrical to each other, and the lower surface of the second layer of dielectric substrate is printed with a cross-shaped parasitic branch and four L-shaped symmetrical open circuit branches which are of the same structure and extend outward along the diagonal direction of the rhombus; the lower surface of the third layer of dielectric substrate is a metal floor; the second layer of dielectric substrate and the third layer of dielectric substrate are connected through a coaxial feeder; the differential feed technology is combined with the microstrip antenna, so that the dual-band dual-polarized filter antenna design with four radiation zeros is realized, the antenna has good edge selectivity and good out-of-band suppression capability, the in-band gain is stable, and the directional diagram has good symmetry and directivity.

The embodiment of the application relates to the technical field of antennas, and discloses an antenna and a communication device, the antenna comprising a main plate, a first antenna unit and a first metal grounding ring, the first antenna unit being arranged at one end of the main plate, the first antenna unit comprising a first support, a first sub antenna and a first parasitic structure, the first sub antenna being arranged on the first support, wherein the first sub antenna comprises a first frequency band radiation area, the first frequency band radiation area respectively extending a second frequency band radiation area and a third frequency band radiation area, the first parasitic structure being arranged around the second frequency band radiation area, and a preset gap being formed between the first parasitic structure and the second frequency band radiation area, and the first metal grounding ring being connected with the first sub antenna. In the above manner, the embodiment of the application can realize coverage of multiple frequency bands while maintaining high radiation efficiency and gain performance.

The invention discloses a dual-frequency dual-port directional diagram reconfigurable antenna loaded with a parasitic structure, which relates to the technical field of reconfigurable antennas and comprises a dielectric substrate, two pairs of printed dipole antennas, a feed network and the parasitic structure, wherein the two pairs of printed dipole antennas are orthogonally arranged on the dielectric substrate and are respectively connected to the feed port I and the feed port II; the feed network comprises a central micro-strip feeder line and parallel metal strip lines; the parasitic structure is composed of a mixed array of square metal units and isosceles right triangle metal units, all the units are arranged at equal intervals, the array is symmetrically arranged relative to the printed dipole, and a preset coupling interval is kept between the array and the printed dipole. According to the invention, two pairs of orthogonally placed printed dipole antennas are used for dual-port feeding, azimuth angle plane wave beam switching is realized, and functions are realized flexibly.

The invention discloses an SOI-based photo-generated current resistant transistor structure and a preparation method thereof, and belongs to the field of semiconductor device preparation and radiation hardening. The top layer silicon, the buried oxide layer and the supporting layer jointly form an SOI substrate material; the source-drain region and the channel region are located in the top layer silicon, and the doping types of the source-drain region and the channel region are the same; the gate dielectric layer is located above the exterior of the top layer silicon; and the grid electrode is positioned above the insulating dielectric layer. According to the invention, the source, the drain and the channel are realized by adopting the same doping type, so that the formation of a PN junction is avoided, the generation of radiation induced current is greatly reduced, and the current amplification effect of a parasitic PNP structure is also immunized; by adopting the PN-junction-free structure, the process steps are remarkably reduced, the process complexity is reduced, for example, lightly doped source and drain process modules and other process modules can be cancelled, and the process manufacturing cost is reduced.

This invention discloses a slotted patch antenna and antenna array with high sidelobe suppression. The upper surface of the first dielectric substrate of the slotted patch antenna has four square rings, and the lower surface of the first dielectric substrate has four rectangular patches. The square rings and rectangular patches are connected by metal pillars to form a stacked metasurface structure. The upper surface of the second dielectric substrate has four arrow-shaped stub strips, and the upper surface of the third dielectric substrate is a metal ground with a rectangular slot etched in the center. The lower surface of the third dielectric substrate is the feed structure, employing a bifurcated microstrip feed network. The first dielectric substrate and the intermediate dielectric substrate are connected by a first adhesive layer, and the second and third dielectric substrates are connected by a second adhesive layer. Based on a fusion design method, this invention improves the sidelobe suppression capability of the slotted patch antenna without occupying additional area due to the added parasitic structure. Therefore, this invention has potential application value in improving communication stability in millimeter-wave systems.

This invention discloses a dual-band co-aperture circularly polarized antenna, comprising a metal cavity structure and high-frequency antenna elements and low-frequency antenna elements stacked from top to bottom within the cavity. The high-frequency antenna element includes a high-frequency radiating patch layer and a high-frequency feed layer connected to an orthogonal L-shaped probe feed structure. The low-frequency antenna element includes a low-frequency radiating patch layer and an air layer. The low-frequency radiating patch layer has a second radiating patch, an orthogonal edge-coupled feed structure, and a parasitic structure. The feed positions of the two sets of feed structures are arranged orthogonally in a horizontal spatial plane, and their excitation regions do not overlap. The low-frequency radiating patch layer and the bottom surface of the cavity serve as the metal ground planes for the two sets of feed structures, respectively. This invention can significantly improve the isolation between the high-frequency and low-frequency elements of the co-aperture antenna, expand the operating bandwidth, achieve stable circularly polarized radiation, and adapt to the integrated application requirements of satellite navigation systems.

The application discloses an HVMOS with a transverse parasitic structure and a preparation method, and belongs to the technical field of semiconductors, and comprises the following: a P-type substrate; an N-type buried layer formed on the surface of the P-type substrate; a P-type epitaxial layer formed on the surface of the N-type buried layer; a plurality of high-voltage N wells formed in the P-type epitaxial layer; wherein the surface of each high-voltage N well is formed with an N well, and the surface of each N well is formed with a first N-type heavily doped region; a P-type active region is formed between each two adjacent high-voltage N wells, the surface of the first P well of one active region is formed with a first P-type heavily doped region, the surface of the second P well of an adjacent active region is formed with a second P-type heavily doped region and a second N-type heavily doped region; the second P-type heavily doped region, the second N-type heavily doped region and the first N-type heavily doped region are electrically connected as a first electrode, and the first P-type heavily doped region is used as a second electrode. The structure of the application forms an extremely low-impedance path to discharge current, and relieves chip heating and burning.

The invention provides an antenna unit and an antenna array, belongs to the technical field of antennas, and aims to improve the functionality of the antenna unit, and the antenna unit comprises two dielectric substrates which are oppositely arranged; the phase shifting structure is located between the two dielectric substrates and comprises a variable dielectric layer; the radiation structure is coupled with the phase shift structure; the parasitic structure is coupled with the radiation structure; wherein the parasitic structure comprises a plurality of metasurface units located on one side of the dielectric substrate and bridging structures, one bridging structure corresponds to at least two adjacent metasurface units, and the bridging structures are connected with control lines. And the control line is used for controlling the connection state between the bridging structure and the metasurface unit.

An electronic device may include a phased antenna array. The array may include co-located first and second antennas formed on a dielectric substrate. The first antenna may include a first patch element and multi-layer parasitic structures. The multi-layer parasitic structures may include a first set of co-planar parasitic elements. The first set of parasitic elements may overlap the first patch element and may be separated by a gap. The multi-layer parasitic structures may include an additional parasitic element that overlaps the gap. The second antenna may include a second patch element that is co-planar with the additional parasitic patch. The second patch element may at least partially overlap one of the parasitic elements in the first set. The first and second patch antennas may collectively cover first and second frequency bands while occupying a minimal amount of space on the dielectric substrate.

The embodiment of the utility model relates to the technical field of antennas, and discloses an antenna and communication equipment, the antenna comprises a mainboard, a support, a circuit board, a first slot, a second slot and a parasitic structure, the support is arranged on the mainboard, the circuit board is arranged on the support, a plurality of conductive circuits are arranged on the circuit board, and the parasitic structure is arranged in the first slot. The conductive circuit forms a main radiator, the first slot is arranged on the circuit board, the second slot is arranged on the support, the first slot and the second slot are arranged correspondingly, one end of the parasitic structure is arranged on the support, the other end of the parasitic structure is arranged on the circuit board, and the parasitic structure is arranged on the circuit board. The parasitic structure and the main radiator are arranged at an interval, and the parasitic structure interacts with the main radiator through electromagnetic coupling. By means of the mode, the antenna can adjust the current path more accurately, and the working frequency band of the antenna is effectively expanded.

The present application relates to the field of semiconductor technology, and specifically to a new ESD protection device under PD-SOI integrated circuit technology, which forms a side additional structure through proper doping and structure design under PD-SOI integrated circuit technology, the side additional structure is in a lateral direction perpendicular to the radial direction, thereby providing an additional embedded parasitic structure for the traditional PNPN thyristor structure, and constituting a new ESD protection device; comprising semiconductor substrate one, semiconductor substrate two, insulator medium one, insulator medium two, insulator-on-semiconductor base one, insulator-on-semiconductor base two, polysilicon one and polysilicon two on the insulator-on-semiconductor base; the polysilicon one is divided into radial polysilicon and side polysilicon according to different directions, the radial polysilicon and the side polysilicon are electrically connected, the side polysilicon is narrowed on one side, and the wide part and the narrow part have chamfers; the semiconductor substrate one and the semiconductor substrate two can be silicon substrates.

The application provides a Ka-band circularly polarized antenna unit, an antenna array and a phased array on a satellite, and belongs to the technical field of antennas.The application aims to solve the connection problem between the phased array and a T / R component and the wideband wide-angle radiation problem.The phased array comprises a radiation structure in an upper layer, a parasitic structure in an intermediate layer and a feeding structure in a lower layer.The radiation structure is composed of upper metal patches and can realize circularly polarized antenna beam radiation.The feeding is realized by coupling transmission from the lowermost metal probe to the upper metal to realize radiation.A metal via hole is added around the radiation antenna to reduce the coupling effect between the antennas.The rotation angle of each antenna unit and the phase of the corresponding phase shifter are the same and are n times of 90 DEG, wherein n is 0, 1, 2 or 3;the rotation angle difference of any two adjacent antenna units and the phase difference of the phase shifter are both 90 DEG, so as to be matched with the bottom T / R component feeding hole.The application can be used for millimeter wave antenna communication and high-resolution radar imaging.