47 results about "Parasitic structure" patented technology

A differential feed dual-frequency dual-polarization microstrip filtering antenna comprises three layers of dielectric substrates which are arranged at intervals from top to bottom, and an octagonal annular coupling parasitic structure is loaded on the lower surface of the first layer of dielectric substrate; a rectangular radiation patch is printed on the upper surface of the second dielectric substrate and is loaded with four non-closed rectangular gaps which are distributed in a square shape and are mutually rotationally symmetrical. A cross-shaped parasitic branch knot and four L-shaped symmetrical open-circuit branch knots which are distributed in a rhombus shape and extend outwards along the diagonal direction of the rhombus are printed on the lower surface of the second dielectric substrate layer; the lower surface of the third dielectric substrate is a metal floor; the second layer of dielectric substrate and the third layer of dielectric substrate are connected through a coaxial feeder line; according to the dual-frequency dual-polarization filtering antenna, the mode of combining the differential feed technology and the microstrip antenna is adopted, the design of the dual-frequency dual-polarization filtering antenna with four radiation zero points is achieved, the antenna has good edge selectivity and good out-of-band rejection capacity, in-band gain is stable, and a directional diagram has good symmetry and directionality.

The invention provides an LDMOS process TVS (Transient Voltage Suppressor) device and a manufacturing method thereof, and belongs to the technical field of TVS semiconductor preparation. Comprising a P-type silicon substrate, the surface of the P-type silicon substrate is provided with a deep N well, the deep N well is used for providing isolation for a source / drain high-voltage N + region and preventing punch-through or premature breakdown between the deep N well and the P-type substrate, the deep N well is used as a collector region of a parasitic NPN BJT, and a P-type body region is arranged in the deep N well. According to the invention, the inherent high-voltage capability of an LDMOS and a parasitic BJT structure are utilized to realize rapid triggering and low clamping, the manufacturing process is highly compatible with a standard CMOS / BCD process, key parameters such as breakdown voltage, clamping voltage, capacitance, surge capability and the like can be optimized by accurately designing a drift region, a P body region, a deep N well and layout, various harsh circuit protection requirements are met, and the reliability of the device is improved. The method is particularly applied to applications requiring low capacitance, high integration level and high reliability.

A differential feed dual-polarization super-directivity array antenna comprises a plurality of array units, and each array unit comprises a supporting structure, a main radiator, a metal floor and a radiation parasitic structure. The metal floor is arranged below the supporting structure, the main radiator is arranged in the supporting structure, the radiation parasitic structure is arranged above the supporting structure, and the main radiator is connected with a metal coaxial connector arranged on the metal floor through the feeder line structure. According to the invention, a dual-polarization radiation mode is realized by adopting two pairs of differential port feed structures, and an array design scheme with a super-directivity characteristic can be realized under two polarizations, so that the directivity upper limit value of a traditional aperture antenna scheme is broken through, and the capacity and the performance of a communication system are remarkably improved.

The invention discloses an anti-single event latch-up process fingerprint extraction method, device and equipment, relates to the technical field of integrated circuit chip anti-radiation capability prediction, and is used for solving the problem of poor precision of a constructed anti-radiation performance prediction model caused by incapability of accurately extracting an anti-single event latch-up process fingerprint in the prior art. Comprising the following steps: identifying a sensitive area through an electric latch test, positioning a key parasitic BJT structure, and establishing a TCAD model of the key parasitic BJT structure; based on the TCAD model, SEL simulation and electric latch simulation are carried out by adjusting and pulling different technological parameters, and a simulation result is obtained; preliminarily determining SEL process fingerprint characteristic quantity and parameter influence weight based on a simulation result; sensitivity analysis is carried out in combination with a Morris method and a Sobol method, the global influence weight of each SEL process fingerprint characteristic quantity is determined, and anti-SEL process parameters are optimized. According to the method, a more accurate anti-radiation performance prediction model can be constructed, and the behavior of the device in the track radiation environment can be further predicted more accurately.

The invention discloses an MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated device of a parasitic super rectifier. The MOSFET integrated device comprises an MOS (Metal Oxide Semiconductor) epitaxial layer, an MOS trench gate, a body region, a source region, an isolating layer, a contact hole and a contact island region, the contact hole comprises an SBR structure region and a metal column; the SBR structural region comprises an SBR epitaxial layer and an SBR gate dielectric layer; the body region is in ohmic contact with the metal column through the body contact region and is further connected with the metal column and the SBR gate dielectric layer. On the other hand, the invention discloses a manufacturing method of the device. The manufacturing method comprises the following steps: manufacturing the MOS trench gate on the epitaxial layer; setting a body region, a source region, an isolation layer and a contact hole; arranging a first dielectric layer on the side wall of the contact hole; setting a contact island area; depositing an SBR epitaxial layer; setting a body contact area; etching the first dielectric layer and the SBR epitaxial layer to form an SBR structure region; and arranging a metal column and a metal layer. The parasitic structure does not independently occupy the cellular structure of the active region, and each MOS cell is provided with adjacent contact holes with the parasitic structure, so that the effective performance is improved.

The invention relates to the field of low-scattering array antennas, in particular to a conformal dual-polarization low-scattering array antenna. According to the scheme, the antenna comprises a dielectric substrate 1, a dipole radiation patch 2, a parasitic patch 3, a wave-absorbing material 4, a feed balun 5 and a metal floor 6, the dielectric substrate 1 and an outer skin of a platform are conformal, the dipole radiation patch 2 subjected to modification and hollowing treatment is printed on the upper surface of the dielectric substrate 1, the parasitic patch 3 is printed on the lower surface of the dielectric substrate 1, and the dielectric substrate 1 is printed on the dielectric substrate 1. The wave-absorbing material 4 is attached to the lower surface of the dielectric substrate 1 and is conformal with the dielectric substrate 1, and the feed balun 5 penetrates through the dielectric substrate 1, the wave-absorbing material 4 and the metal floor 6 and is connected with radiation arms on the two sides of the dipole radiation patch 2 respectively. According to the invention, the antenna scattering can be effectively reduced by shaping and hollowing out the dipole radiation patch, and the standing wave performance can be improved and the scattering can be reduced by loading the parasitic structure and the wave-absorbing material in the space below the dielectric substrate. The method is suitable for the stealth platform.

An antenna provided in this application may include a first element, a second element, a decoupling stub, a first parasitic structure, and a second parasitic structure. The decoupling stub is connected to the first element and the second element, there is a first gap between the decoupling stub and the first element, there is a second gap between the decoupling stub and the second element, the first parasitic structure is disposed in the first gap, and the second parasitic structure is disposed in the second gap.

The invention discloses an MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated device of a parasitic super rectifier. The MOSFET integrated device comprises an MOS (Metal Oxide Semiconductor) epitaxial layer, an MOS trench gate, a body region, a source region, an isolating layer and a contact hole, the contact hole comprises an SBR structure region and a metal column; the SBR structural region comprises a bottom dielectric layer, an SBR metal gate and an SBR gate dielectric layer; the body region is in ohmic contact with the metal column through the body contact region and is further connected with the metal column and the SBR gate dielectric layer. On the other hand, the invention discloses a manufacturing method of the device. The manufacturing method comprises the following steps: manufacturing the MOS trench gate on the epitaxial layer; setting a body region, a source region, an isolation layer and a contact hole; arranging a bottom dielectric layer and a first dielectric layer in the contact hole; depositing an SBR metal gate; setting a body contact area; etching the first dielectric layer and the SBR metal gate to form an SBR structure region; and arranging a metal column and a metal layer. The parasitic structure does not independently occupy the cellular structure of the active region, and each MOS cell is provided with adjacent contact holes with the parasitic structure, so that the effective performance is improved.

The invention belongs to the technical field of semiconductor devices, and particularly relates to a multi-channel SOI LIGBT device. Comprising a first conductive type epitaxial layer and an isolation groove located on the outer side; an emitter second conductive type well region I, an emitter second conductive type well region II and a collector first conductive type buffer layer are arranged on the first conductive type epitaxial layer; wherein the first second conductive type well region of the emitter is located in the second conductive type deep well region, a first conductive type doped region is arranged in the second conductive type deep well region, and the first conductive type doped region is located between the isolation groove and the second conductive type deep well region. According to the invention, the second conductive type deep well region is introduced on the basis of a traditional multi-channel SOI LIGBT device, so that the capability of extracting storage carriers of the device is improved under a turn-off condition; by arranging the first conductive type doped region, a current path is compressed, the current concentration phenomenon at the corner of the device is relieved, and the risk of starting a parasitic structure is reduced.

The invention relates to the technical field of wireless communication, and provides an antenna system and electronic equipment, the antenna system comprises a first antenna and a second antenna, a first parasitic branch is arranged between the first antenna and the second antenna and is coupled with the first antenna and the second antenna, and at least one tuning branch of a tuning switch is connected with the first parasitic branch. And other tuning branches are connected with the first antenna or the second antenna. According to the antenna system and the electronic equipment provided by the embodiment of the invention, the first parasitic branch at the bottom data interface position of the electronic equipment is suspended, so that the first parasitic branch can be used as a parasitic structure of a bottom frame antenna, and the state of the first parasitic branch is tuned by using the tuning switch to realize cross intermodulation of the bottom antenna; therefore, the antenna performance of the bottom antenna is improved, and the efficiency of the whole antenna is improved.

This invention discloses a millimeter-wave wide-beam DRA, a wide-angle beam scanning phased array, and their design methods. The DRA consists of a DR and a microstrip coupling slot located directly below the DR. This invention enables the non-exciteable DRA to achieve TE by setting the dimensions of the slot and the DR. 112 The resonant frequency of the mode is close to that of the slot operating mode, and the field inside the DR will exhibit a similar behavior to that of the TE mode. 112 The field distribution of the mode forms an equivalent magnetic current parallel to the ground plane, thereby achieving wide beam characteristics in the E-plane and H-plane; moreover, arranging multiple such small-sized DRA units at equal intervals can form a linear phased array in the E-plane (H-plane), whose beam can be scanned from -72° to +72° (-65° to +65°), with a gain ripple of 2.5dB (0.5dB), and the present invention does not require any parasitic structures or additional active control circuits.

The invention discloses a high-gain ultra-wideband dual-polarized antenna with a filtering characteristic, and belongs to the technical field of communication equipment, and the antenna comprises an antenna radiation layer which is printed on a first dielectric substrate and comprises four annular units, and the four annular units are arranged in a four-leaf clover shape on a horizontal plane; the parasitic structure layer is printed on the second dielectric substrate and arranged above the antenna radiation layer in parallel, the parasitic structure layer comprises a circular patch and four sections of arc rings, the circular patch is located at the center of the second dielectric substrate, and the four sections of arc rings are evenly distributed around the circular patch; and the reflection cavity comprises a bottom plate and four reflection walls, the four reflection walls are vertically connected with four edges of the bottom plate to form a semi-open cavity, and the antenna radiation layer and the parasitic structure layer are arranged in the reflection cavity. The antenna covers all 5G communication frequency bands between 1.7 GHz and 3.7 GHz, gain attenuation in a passband is gentle, the antenna has the functions of ultra wide band, high gain and filtering, and the antenna is simple in structure and convenient to process and assemble.

This invention discloses a structure and method for achieving wide-bandwidth beam characteristics based on an open-circuit resonator, solving the problems of wide-bandwidth angular domain, compact structure, and low cost compatibility in radar detection. The parasitic structure proposed in this invention is an open-circuit resonator array, composed of stacked subarrays of different frequency bands that are interconnected and cover the antenna's frequency band. The method includes designing the parasitic structure; stacking and assembling the arrays according to the number and frequency bands of the antenna stator arrays; combining the parasitic structure with the antenna; and achieving wide-bandwidth beam characteristics. This invention utilizes the omnidirectional radiation characteristics of the open-circuit resonator to form an array, extending the antenna's beamwidth over a wide range. The open-circuit resonator unit is relatively small, and this invention achieves beam extension functionality within a compact space, exhibiting miniaturization characteristics, and can be applied to small computers and UAVs. This invention prints the open-circuit resonator on the surface of a dielectric substrate, allowing for integrated design with the antenna, significantly reducing design, manufacturing, and installation costs.

This application relates to the field of antenna technology, disclosing an antenna and a communication device. The antenna includes a main board, a radiating structure, a parasitic structure, and a feeding structure. The radiating structure is disposed on the main board and includes high-frequency stubs and low-frequency stubs. The parasitic structure is disposed on the main board and includes high-frequency parasitic stubs and low-frequency parasitic stubs. The high-frequency parasitic stubs are electromagnetically coupled to each other, and the low-frequency parasitic stubs are also electromagnetically coupled to each other. The feeding structure is connected to both the high-frequency and low-frequency stubs, providing electrical signals to them. Through this method, this application enables a single antenna to support communication needs from 2G to 5G and multiple Wi-Fi frequency bands.

The invention discloses a filtering grid slotted patch antenna with high sidelobe suppression and an antenna array, the upper surface of a first dielectric substrate of the filtering grid slotted patch antenna is provided with four square rings, and the lower surface of the first dielectric substrate is provided with four rectangular patches; the square ring and the rectangular patch are connected through a metal column to form a stacked metasurface structure, the upper surface of the second dielectric substrate is four arrow-shaped branch stripes, the upper surface of the third dielectric substrate is a metal ground, a rectangular gap is etched in the middle of the metal, the lower surface of the third dielectric substrate is a feed structure, and a forked microstrip feed network is adopted. The first dielectric substrate is connected with the middle dielectric substrate through a first bonding layer, and the second dielectric substrate is connected with the third dielectric substrate through a second bonding layer. Based on a fusion design method, the added parasitic structure does not occupy extra area, and the side lobe suppression capability of the filtering metasurface antenna can be improved, so that the filtering metasurface antenna has potential application value in improving the communication stability in a millimeter wave system.

The invention discloses a compact omnidirectional broadband high-efficiency full-duplex binary antenna pair based on a dipole antenna, which relates to the technical field of dipole antennas, and comprises a near-field resonance parasitic structure, a first dielectric substrate, two Egypt battle axe dipoles, a second dielectric substrate and two feed dipoles, the near-field resonance parasitic structure is arranged on the upper surface of the first dielectric substrate, the two Egypt battle axe dipoles are arranged on the lower surface of the first dielectric substrate, and the two feed dipoles are arranged on the lower surface of the second dielectric substrate; the lower surface of the first dielectric substrate is fixedly connected with the upper surface of the second dielectric substrate; the antenna has the advantages of miniaturization, low profile, high isolation, high efficiency, stable omnidirectional performance and wide working bandwidth, and can be applied to a high-performance indoor terminal communication WiFi antenna system with a compact size.

The invention provides an antenna array structure, an antenna and communication equipment, relates to the technical field of communication, and aims to solve the problem of poor antenna radiation gain. The antenna provided by the invention comprises a reflecting plate, an oscillator and a parasitic structure, the reflecting plate is provided with a reflecting surface, the oscillator and the parasitic structure are both arranged on one side of the reflecting surface, and the parasitic structure is coupled with the oscillator; wherein the vertical projection of the parasitic structure and the vertical projection of the oscillator on the reflecting surface are not overlapped, the distance between the parasitic structure and the oscillator is greater than or equal to 1 / 4 lambda, and lambda is the wavelength of electromagnetic waves of the lowest frequency point radiated by the oscillator, which are propagated in the space. In the antenna array structure provided by the invention, the electromagnetic wave radiated by the oscillator can generate induction current in the parasitic structure, so that the parasitic structure generates secondary radiation, the electromagnetic wave radiated by the oscillator and the electromagnetic wave radiated by the parasitic structure can be effectively superposed, the beam width of the antenna can be effectively narrowed, and the radiation aperture of the antenna can be improved. Therefore, the effect of improving the antenna radiation gain is achieved.

The application discloses a dual-frequency dual-port directional diagram reconfigurable antenna loaded with a parasitic structure and relates to the technical field of reconfigurable antennas. The antenna comprises a dielectric substrate, two pairs of printed dipole antennas, a feed network and a parasitic structure. The two pairs of printed dipole antennas are orthogonally arranged on the dielectric substrate and are respectively connected to a feed port one and a feed port two. The feed network comprises a central microstrip feed line and a parallel metal strip line. The parasitic structure is composed of a mixed array of square metal units and isosceles right triangle metal units. Each unit is arranged at equal intervals, the array is symmetrically arranged relative to the printed dipole, and a predetermined coupling interval is maintained between the array and the printed dipole. The application uses two pairs of orthogonally arranged printed dipole antennas for dual-port feeding, realizes azimuth angle plane beam switching, and is flexible in function realization.

This application relates to the field of communications technology and provides an antenna and a communication device for solving problems of insufficient isolation and narrow decoupling bandwidth. The antenna provided herein may include a first element, a second element, a decoupling stub, a first parasitic structure, and a second parasitic structure. The decoupling stub is connected to the first element and the second element, a first gap is between the decoupling stub and the first element, a second gap is between the decoupling stub and the second element, the first parasitic structure is disposed in the first gap, and the second parasitic structure is disposed in the second gap. When the first element and the second element are operating, a decoupling current may be generated in the decoupling stub, the first parasitic structure, and the second parasitic structure. The decoupling current is canceled out by an initial coupling current between the first element and the second element, creating an isolation null. This effectively improves the isolation and wideband decoupling performance between the first element and the second element.

The present invention relates to the technical field of semiconductor devices, and specifically discloses a NAND flash memory storage device and an electronic device, comprising: a semiconductor substrate; the peripheral circuit includes a plurality of hybrid transistor block structures, and each hybrid transistor block structure includes a first-conductivity-type transistor region and a second-conductivity-type transistor region; the first-conductivity-type transistor region includes a first-conductivity-type transistor structure and a first-conductivity-type transistor parasitic structure, the second-conductivity-type transistor region includes a second-conductivity-type transistor structure and a second-conductivity-type transistor parasitic structure, the first-conductivity-type transistor structure and the first-conductivity-type transistor parasitic structure share the same second-conductivity-type electrode active layer, and the second-conductivity-type transistor structure and the second-conductivity-type transistor parasitic structure share the same first-conductivity-type electrode active layer. The NAND flash memory storage device provided by the present invention can improve the electrostatic capacitance of the capacitor within a given area.

A split gate carrier stored trench bipolar transistor (CSTBT) with current clamping PMOS include a P-type buried layer and a split gate electrode with equal potential to an emitter metal on the basis of the traditional CSTBT, which effectively eliminates the influence of an N-type carrier stored layer on breakdown characteristics of the device through the charge compensation effect, and helps to improve the trade-off relationship between the on-state voltage drop and the turn-off loss. Moreover, the introduction of a parasitic PMOS structure can reduce the saturation current and improve short-circuit safe operating area of the device, reduce the Miller capacitance, and improve the switching speed of the device and reduce the switching loss of the device. In addition, the split gate CSTBT integrating the split gate electrode and gate electrode in the same trench can shorten the distance between PMOS and NMOS channels.

The invention discloses a compact high-frequency-ratio dual-frequency antenna based on substrate integration. The compact high-frequency-ratio dual-frequency antenna comprises a lower-layer substrate and an upper-layer substrate. The lower substrate is provided with a microstrip line feed network and a cross-shaped gap. SIW cavities are arranged in four corner areas of the upper-layer substrate, a linear gap is etched in a grounding layer on the top surface of each cavity, and a patch and a square ring-shaped parasitic structure are arranged. The lower-layer cross-shaped gap and the upper-layer SIW cavity form a coupled feed structure, so that lower-layer radiation energy is coupled to the SIW cavity and the linear gap is excited to generate radiation. A unique double-layer structure and a coupling feeding mechanism are adopted, ultra-wideband and millimeter wave double-frequency-band work is achieved, and the ultra-wideband and millimeter wave dual-frequency-band antenna has the advantages of being compact in structure, high in isolation degree and capable of independently regulating and controlling performance and is suitable for a modern wireless communication system.

The present application relates to the field of low scattering array antenna, and particularly relates to a conformal dual-polarized low scattering array antenna. The scheme comprises a dielectric substrate 1, a dipole radiation patch 2, a parasitic patch 3, a wave absorbing material 4, a feed balun 5, and a metal floor 6. The dielectric substrate 1 is conformal to the outer skin of a platform. The dipole radiation patch 2 is printed on the upper surface of the dielectric substrate 1 after being shaped and hollowed. The parasitic patch 3 is printed on the lower surface of the dielectric substrate 1. The wave absorbing material 4 is attached to the lower surface of the dielectric substrate 1 and is conformal to the dielectric substrate 1. The feed balun 5 penetrates the dielectric substrate 1, the wave absorbing material 4 and the metal floor 6 and is connected to the two side radiation arms of the dipole radiation patch 2 respectively. The present application can effectively reduce the antenna scattering by shaping and hollowing the dipole radiation patch. The space below the dielectric substrate is loaded with a parasitic structure and a wave absorbing material, which can improve the standing wave performance and reduce the scattering. The present application is suitable for stealth platforms.

The invention provides a vertical polarization directional diagram reconfigurable antenna which is provided with a dielectric substrate I serving as a supporting base, and a dielectric substrate II and a dielectric substrate III which are of a cross structure are fixedly arranged in the center of the upper end face of the dielectric substrate I; a crossed elliptical monopole is arranged at the central position of the crossed dielectric substrate II and dielectric substrate III; the dielectric substrate II is provided with a zigzag line parasitic structure I and a zigzag line parasitic structure II which are bilaterally symmetrical; the dielectric substrate III is provided with a zigzag line parasitic structure III and a zigzag line parasitic structure IV which are bilaterally symmetrical; the center of the zigzag line parasitic structure I is provided with a PIN switching diode D1, the center of the zigzag line parasitic structure II is provided with a PIN switching diode D2, the center of the zigzag line parasitic structure III is provided with a PIN switching diode D3, and the center of the zigzag line parasitic structure IV is provided with a PIN switching diode D4. The dielectric substrate I1 is used for etching a direct current bias line; and the dielectric substrate II etches the rectangular ground. The antenna is simple in structure, facilitates integration, can achieve multi-beam switching and wide working frequency band at the same time, and is suitable for popularization.

The application discloses a broadband end-fire antenna integrated with photovoltaic cell pieces, which operates in a 3.81-8.97 GHz frequency band, and a single unit of the broadband end-fire antenna comprises a radiation main body, a feeder and a parasitic structure; the radiation main body is formed by connecting solar cell pieces in series and then connecting the series in parallel, and is located on the upper surface of a dielectric plate; the feeder is located on the lower surface of the dielectric plate and is used for feeding power, and the radiation main body is excited by a port; the parasitic structure is located below the outer side of the solar cell pieces in a series of solar cell pieces and is connected with the solar cell pieces, and is used for improving impedance matching. By introducing the parasitic structure, the broadband end-fire antenna can cover the 3.81-8.97 GHz frequency band and realize the performance of the broadband antenna. In addition, solar energy is fully utilized, the design of perpendicularization of the illumination direction and the communication direction of the antenna is realized, the relative bandwidth reaches 80.75%, and the system complexity is low.

The present invention discloses a high-gain wide-beam telemetry ground receiving antenna based on a multi-element structure, which includes an antenna array, a metal floor and an array base. The antenna array adopts a multi-element structure and includes eight antenna elements. Each antenna element includes a parasitic layer, a microstrip antenna layer, a feed network layer and a metal cylindrical cavity structure. The parasitic layer, the microstrip antenna layer, the feed network layer and the metal cylindrical cavity structure are sequentially supported and assembled by dielectric support columns from top to bottom. The feed network layer adopts a microstrip-type branch-line directional coupler. The present invention adopts the above-mentioned high-gain wide-beam telemetry ground receiving antenna based on a multi-element structure, uses the form of a parasitic structure to broaden the bandwidth of the microstrip antenna, broadens its impedance bandwidth by adjusting the size and height of the parasite, and strengthens a metal cylindrical cavity at the bottom layer of the microstrip network to enhance the gain and axial ratio of the microstrip.

The invention discloses an antenna radiator, a reconfigurable antenna unit and a control method of the reconfigurable antenna unit. The antenna radiator comprises a dielectric plate; the radiation unit is positioned on one side of the dielectric plate; the plurality of resonant structures are symmetrically distributed at the periphery of the radiation unit; the metal parasitic structure and the radiation unit are positioned on the same plane; the metal parasitic structure is configured to disturb the bulk current density around the radiation unit; the liquid crystal structure is positioned on one side of the metal parasitic structure; the liquid crystal structure is configured to adjust a bulk current density around the radiation unit.

The application discloses a differential feed dual-band dual-polarized microstrip filter antenna, which comprises three layers of dielectric substrates arranged in a top-down interval, and the lower surface of the first layer of dielectric substrate is loaded with an octagonal ring-shaped coupling parasitic structure; the upper surface of the second layer of dielectric substrate is printed with a rectangular radiation patch, the rectangular radiation patch is loaded with four unclosed rectangular slots which are square distributed and rotationally symmetrical to each other, and the lower surface of the second layer of dielectric substrate is printed with a cross-shaped parasitic branch and four L-shaped symmetrical open circuit branches which are of the same structure and extend outward along the diagonal direction of the rhombus; the lower surface of the third layer of dielectric substrate is a metal floor; the second layer of dielectric substrate and the third layer of dielectric substrate are connected through a coaxial feeder; the differential feed technology is combined with the microstrip antenna, so that the dual-band dual-polarized filter antenna design with four radiation zeros is realized, the antenna has good edge selectivity and good out-of-band suppression capability, the in-band gain is stable, and the directional diagram has good symmetry and directivity.

The present application relates to the technical field of communications, and provides an antenna array structure, an antenna, and a communication device, for use in solving the problem of poor antenna radiation gain. The antenna provided by the present application comprises a reflecting plate, radiating elements, and parasitic structures; the reflecting plate is provided with a reflecting surface, the radiating elements and the parasitic structures are all arranged on one side of the reflecting surface, and the parasitic structures are coupled with the radiating elements; the vertical projections of the parasitic structures and the radiating elements on the reflecting surface do not overlap; and the distance between each parasitic structure and the corresponding radiating element is greater than or equal to 1 / 4 λ, wherein λ is the space-propagation wavelength of lowest-frequency electromagnetic waves radiated by the radiating elements. In the antenna array structure provided by the present application, the electromagnetic waves radiated by the radiating elements can generate induction currents in the parasitic structures, so that the parasitic structures generate secondary radiation, and the electromagnetic waves radiated by the radiating elements and electromagnetic waves radiated by the parasitic structures can be effectively superimposed, effectively narrowing the beamwidth of the antenna and increasing the radiation aperture of the antenna, thereby achieving the effect of improving the antenna radiation gain.

The embodiment of the application relates to the technical field of antennas, and discloses an antenna and a communication device, the antenna comprising a main plate, a first antenna unit and a first metal grounding ring, the first antenna unit being arranged at one end of the main plate, the first antenna unit comprising a first support, a first sub antenna and a first parasitic structure, the first sub antenna being arranged on the first support, wherein the first sub antenna comprises a first frequency band radiation area, the first frequency band radiation area respectively extending a second frequency band radiation area and a third frequency band radiation area, the first parasitic structure being arranged around the second frequency band radiation area, and a preset gap being formed between the first parasitic structure and the second frequency band radiation area, and the first metal grounding ring being connected with the first sub antenna. In the above manner, the embodiment of the application can realize coverage of multiple frequency bands while maintaining high radiation efficiency and gain performance.