The invention discloses a bidirectional ESD protection structure embedded with a low-trigger voltage PNP structure, which is used for ESD protection devices on IC chips; region, the first P+ bridge, the second P+ implant region, the second P+ bridge, the third P+ implant region, the second N+ implant region, a metal anode, a metal cathode and several field oxygen isolation regions. Under the action of high-voltage ESD pulses, on the one hand, it forms a parasitic SCR current protection path through the first P+ injection region, the first N well, P well, the second N well, and the second N+ injection region, which can increase the failure current of the device , Enhance the ESD robustness of the device. On the other hand, the parasitic PNP structure composed of the first P+ injection region, the first N well, the first P+ bridge, the P well, and the second P+ injection region is used to increase the sustain voltage of the device and enhance the anti-latch-up capability of the device. The ESD protection device has a symmetrical structure, which can realize a bidirectional ESD protection function and reduce the occupied layout area.