The invention relates to the technical field of
semiconductor lasers, in particular to a single-mode high-power surface-emitting
semiconductor laser and a manufacturing method thereof. The
laser comprises an N
electrode layer, an epitaxial structure, an insulating layer and a P
electrode from bottom to top, wherein the epitaxial structure comprises a substrate, an N-type DBR layer, a
transition layer, an active region layer, a super-symmetric
coupling cavity layer, an
oxide layer and a P-type DBR layer; an unoxidized hole is formed in the center of the
oxide layer, a
gain cavity corresponding to the unoxidized hole is formed in the super-symmetric
coupling cavity layer, and a loss cavity is formed in the periphery of the
gain cavity. The super-symmetric
coupling cavity layer with the
gain cavity and the loss cavity is arranged between the active region layer and the
oxide layer, loss of an
optical field in a high-order mode is limited in the loss cavity, the gain difference between a fundamental mode and the high-order mode is increased, stable single-mode output is achieved, and the output efficiency is improved. The technical problems that in a
vibration exciter in the prior art, shallow layer
etching on an epitaxial structure has limited high-order mode loss, and single-mode output performance and stability cannot be guaranteed are effectively solved.