The invention provides a
broadband tunable light emitting
chip based on an asymmetric multi-
quantum well technology and a preparation method, the tunable light emitting
chip comprises a plurality of
laser units distributed in columns, and each column of
laser units comprises a plurality of lasers connected in series; the
laser units achieve single-
waveguide laser output through
cascade Y
waveguide combination, each laser comprises an asymmetric multi-
quantum well layer and a
grating layer, the thickness of each
quantum well is gradually decreased from top to bottom, and a
grating is located on the surface of the upper limiting layer. The tunable lasers connected in series and in parallel are adopted, and single-
waveguide laser output is achieved through
cascade Y waveguide combination; the asymmetric
multiple quantum wells are arranged, so that the overall tunable range of the laser can be widened; a sampling
grating is manufactured through a reconstruction equivalent
chirp technology to select a
lasing wavelength, and pi phase shift is introduced to carry out
phase matching so as to ensure single
wavelength output; according to the invention, gains can be provided for a plurality of laser units, the density of monolithic integration is improved, the transmission capacity is increased, and the single-mode yield is improved.