2811results about "Semiconductor lasers" patented technology

A pest control system is disclosed comprising an optical, computational, and monitoring subsystem, optionally mounted on a mobile platform. The optical system may include a neutralizing laser or multi-wavelength light source, discovery and detail cameras (optionally stereo), a beam-steering mechanism, tunable focus, and optional thermal or depth sensors. The processor, such as a GPU or FPGA, identifies insect or biological targets, adjusts laser focus by depth, and controls beam activation. A monitoring system verifies safety by detecting humans or other non-target entities using environmental and thermal cameras; if detected, laser firing is inhibited. The mobile platform may use wheels, propellers, tracks, or cables, with GPS and data links for remote control. A visible light pre-flash may induce a blink reflex before firing. In some embodiments, a scouting drone transmits target coordinates to the neutralization unit, enabling coordinated, efficient, and safe laser-based pest control.

The invention discloses a temperature control and noise reduction method for an analog optical module, and relates to the technical field of data processing. The method comprises the following steps: collecting and preprocessing an original temperature signal, environment temperature time sequence data and an optical wavelength original detection value of an optical module; improving the LSTM model, constructing a junction temperature dynamic prediction model, and outputting prediction data; a pre-trained BP neural network is utilized to calculate the temperature compensation amount according to the real-time wavelength offset, and a PPO reinforcement learning algorithm is adopted to optimize with the temperature stability, the wavelength offset and the TEC power consumption as multiple targets to obtain an optimal PID parameter mapping table; and finally, predicting, compensating and optimizing parameters are fused, and control output for driving the TEC is generated through a multi-mode intelligent decision. The problems of insufficient control precision and response lag are effectively solved, cooperative high-precision control over the junction temperature and the emission wavelength of the laser is achieved, transmission noise is remarkably reduced, and meanwhile system energy consumption and the self-adaptive capacity are considered.

The invention relates to a light spot uniformity optimization method and system for a high-precision VCSEL device, and the method comprises the following steps: carrying out the light field collection of a light-emitting surface of the VCSEL device, obtaining the intensity distribution of original light spots, analyzing the non-uniformity of each light-emitting unit, and extracting the non-uniformity characteristics of the light spots. And carrying out deviation cause analysis based on the characteristics, and identifying device structure deviation parameters. According to the method, an etching process is optimized, a corrected oxidized aperture configuration scheme is obtained, near-field light field simulation is carried out by adopting a finite difference time domain method, and optimized light field distribution is verified and predicted. And finally, adaptive compensation design is carried out on the Bragg reflector structure based on a prediction result, light field regulation and control are realized, target light spot uniformity distribution is finally obtained, and the problem that systematic analysis and feedback control on non-uniformity causes of a light emitting unit layer in a device are lacked in the prior art is solved. And local bright spots or dark areas are caused.

An optical transceiver module and an optical cable module using the same are provided. The optical transceiver module: a substrate; at least one optical receiving device connected to the substrate; a plurality of optical transmitting devices connected to the substrate, wherein the optical transmitting devices comprise a plurality of first optical transmitting devices and a plurality of second optical transmitting devices, and the optical transmitting devices are misaligned to each other.

The invention relates to the technical field of lasers, in particular to a laser heat management device and a control method thereof, the laser heat management device comprises a cooling substrate, the cooling substrate is internally provided with a micro-channel, the micro-channel comprises a main channel and a branch channel, and the main channel is used for circulating cooling water; the cooling substrate is provided with a detection control area, the detection control area is located at the joint of the branch channel and the main channel, the detection control area is provided with a phase change micro-valve and a detection assembly, the detection assembly is used for collecting temperature data, the phase change micro-valve comprises a phase change material and a flexible separation blade, and after the valve is opened, the phase change material generating phase change pushes the flexible separation blade, and the phase change micro-valve is connected with the detection assembly. The communication state of the main channel and the branch channel is controlled; the main controller is used for receiving the temperature data of all the detection control areas and controlling the valves of the corresponding detection control areas to be opened or closed according to the deviation between the temperature data and the target temperature. The temperature gradient of the laser can be reduced at least so as to ensure that the laser realizes a long-term stable working state.

The invention relates to the technical field of data processing, in particular to a real-time data monitoring and early warning method for the growth process of a VCSEL epitaxial wafer, which comprises the following steps: acquiring the refractive index of a material used by the epitaxial wafer at the current moment in the growth process of the VCSEL epitaxial wafer by using MOCVD (Metal Organic Chemical Vapor Deposition) equipment; determining the growth rate of the epitaxial wafer at the current moment; determining the mutation degree of the growth rate of the epitaxial wafer at the current moment; determining the correction mutation degree of the growth rate of the epitaxial wafer at the current moment; determining an early warning threshold value at the current moment; and monitoring and early warning of real-time data in the growth process of the VCSEL epitaxial wafer are realized according to the corrected mutation degree and the early warning threshold value. According to the method, accurate inversion of the growth rate and intelligent identification of mutation are realized, abnormal and normal process changes are effectively distinguished, the early warning threshold is adaptively adjusted, the false alarm rate is reduced, and the accuracy and practicability of VCSEL epitaxial growth monitoring are improved.

The invention provides a well drilling anti-interference communication system based on a VCSEL (Vertical Cavity Surface Emitting Laser), the VCSEL and a manufacturing method thereof, and the manufacturing method comprises the following steps: calculating the light field intensity distribution of a high-order transverse mode through an intrinsic mode expansion method and a Laguerre-Gaussian model based on the epitaxial structure parameters of a laser; determining a target area which begins to perform downward annular etching on the surface of the p-DBR layer, wherein the target area coincides with a light field intensity peak area of the high-order transverse mode; performing annular etching in the target area to form an annular groove, and etching at least seven pairs of p-DBR layers inwards in the groove; the communication system comprises a signal transmitting end arranged on the derrick side, and the signal transmitting end is provided with the vertical cavity surface emitting laser; the p-DBR region of the vertical cavity surface emitting laser is provided with an annular etching structure; the graded-index fluorinated plastic optical fiber is used as a transmission medium and is connected with the derrick side and the logging room side; and the optical signal receiving end is arranged at the logging room side and is used for receiving and converting the optical signal into an electric signal.

Performance evaluation and structural optimization methods for a high-power semiconductor laser chip, and a performance evaluation system for a high-power semiconductor laser chip. The performance evaluation method for a high-power semiconductor laser chip comprises: providing a window on an N-side electrode of a chip to be tested (step 1); keeping the chip in an operating state (step 2); allowing a quantum well active region of the chip to generate spontaneous emission, so that the spontaneous emission is imaged outside the chip (step 3); acquiring, by means of a spectrograph, a spectrum of the spontaneous emission outside the chip and obtaining a two-dimensional distribution of a quantum well temperature of the chip in the operating state; and acquiring, by means of a CCD camera, an image of the spontaneous emission imaging outside the chip and obtaining a two-dimensional distribution of charge carriers in the quantum well of the chip in the operating state (step 4). According to the performance evaluation and structural optimization methods for a high-power semiconductor laser chip, the distributions of the temperature and the charge carrier concentration in the quantum well of the chip to be tested in the operating state in which the resolution is freely adjusted can be obtained. Operations of the methods are convenient, and implementation is simple and easy, thereby efficiently improving the accuracy of an evaluation result.

The invention relates to the technical field of lasers, in particular to a multi-chip vertical external cavity surface emitting laser which comprises a chip set, a first prism, a second prism and an output coupling mirror which are sequentially arranged along a preset central axis. The chipset comprises N gain chips, and the N gain chips output N sub light beams; the N sub-beams pass through the first prism, the sub-beams emitted from the first prism converge towards a preset central axis, the sub-beams are incident to the second prism before convergence and are combined into a resonant beam through the second prism, the resonant beam resonates in a resonant cavity formed by the output coupling mirror and the chip set, and the output coupling mirror and the chip set form a resonant cavity; the output laser is emitted from the output coupling mirror; wherein N is greater than 1. The invention is beneficial for solving the problems that the power of a single chip is limited, the beam combining efficiency is low, only incoherent beam combining can be realized, and a multi-chip beam combining structure is complex.

The invention discloses a semiconductor narrow linewidth laser temperature cycle test system and a test method thereof, which belong to the field of laser communication and eliminate errors caused by system loss to optical power measurement through optical power calibration compensation coefficients. The variable-temperature adjustment is controllable, the wavelength of the laser is efficiently tuned, and various indexes are measured. The device mainly comprises a plurality of drivers and a high-low temperature test box, to-be-tested laser parts of a plurality of tested lasers are placed in the high-low temperature test box, and other parts of the tested lasers are located outside the high-low temperature test box so as to avoid the influence of equipment temperature drift on measurement; the plurality of drivers are respectively and correspondingly connected with the plurality of tested lasers, optical chip driving current and TEC closed-loop temperature control are provided for the tested lasers, wavelength tuning of the lasers is realized through the TEC closed-loop temperature control system, and temperature sensors are arranged at the tested lasers in the high and low temperature test box. The invention is mainly used for the semiconductor narrow linewidth laser temperature cycle test system.

The invention relates to the technical field of semiconductor lasers, in particular to a vertical-cavity surface-emitting semiconductor laser and a manufacturing method thereof.The vertical-cavity surface-emitting semiconductor laser comprises a substrate, an N-type DBR layer, an active region, an oxide layer, a P-type DBR layer, a P contact layer and a P metal layer which are sequentially arranged from bottom to top, oxidation holes are formed in the oxide layer, a carbon displacement modulation structure layer is arranged in the P contact layer, and the P metal layer is arranged in the N-type DBR layer. The lower end of the carbon displacement modulation structure layer is located in the P-type DBR layer, the carbon displacement modulation structure layer is right opposite to the oxidation hole, and the material of the carbon displacement modulation structure layer is GaAs doped with carbon atoms. The high-frequency characteristic, single-mode performance, ultra-long service life, wide-temperature work and extreme environment resistance which are difficult to reach by a traditional pure oxidation limiting scheme and a traditional diffusion technology and oxidation limiting VCSEL scheme are achieved through cooperation of precise control of the SEG technology and the ultra-low diffusion characteristic of carbon.

The invention relates to the technical field of semiconductors, in particular to a semiconductor laser and a processing method thereof.The semiconductor laser comprises a mounting frame, a bottom plate, a top plate, an electrode plate and a plurality of laser stacking assemblies, and each laser stacking assembly comprises a first laser unit and a second laser unit; the first laser unit comprises a first laser body, a first supporting plate and a first bottom plate; the second laser unit comprises a second laser body, a second supporting plate and a second top plate, the second supporting plate is provided with a second liquid inlet and a second flow passing channel, the second liquid inlet is communicated with the first liquid outlet, the second top plate is fixed to the top of the second supporting plate, a second liquid outlet is formed, and the second liquid outlet and the first liquid inlet are located on the same axis. A plurality of laser stacking assemblies can be connected in sequence, heat dissipation is carried out in a series connection mode, and therefore the heat dissipation capacity of the laser stacking assemblies is greatly improved.

The present application provides a method for performance evaluation and structure optimization of a high-power semiconductor laser chip, and a system for performance evaluation. Wherein the method for performance evaluation of a high-power semiconductor laser chip comprises: setting a window in an N-surface electrode of a chip to be tested; maintaining the chip to be tested in an operating state, wherein spontaneous radiation is generated in an active area of a quantum well of the chip to be tested; imaging the spontaneous radiation at a position outside the chip to be tested; acquiring, by using a spectrometer outside the chip to be tested, a spectrum of the spontaneous radiation to obtain a two-dimensional distribution of temperature of the quantum well of the chip to be tested in the operating state; and acquiring, by using a CCD camera outside the chip to be tested, an image of the spontaneous radiation to obtain a two-dimensional distribution of carriers in the quantum well of the chip to be tested in the operating state. The method for performance evaluation and structure optimization of a high-power semiconductor laser chip provided by the present application can get the temperature distribution and the carrier concentration distribution of the chip to be tested in the operating state with a resolution that is freely adjustable, the operation is convenient and easy to implement, and the accuracy of evaluation results is effectively improved.

The classical channel employs a transmit laser and classical modulator. The quantum channel employs a nonlinear medium and spontaneous parametric down conversion producing quantum entangled signal and idler photon pairs which are encoded. The classical and quantum channels are combined to define a propagated hybrid signal. The receiver splits the hybrid signal on basis of wavelength into classical and quantum channels. The quantum receiver employs optical parametric amplification, supplied with energy from a second harmonic generation device synchronized to the classical carrier wavelength. A photodetector and extracts a quantum message from the quantum signal.

The invention belongs to the technical field of semiconductor device performance testing, and particularly relates to a VCSEL epitaxial wafer resistivity distribution measuring method and system, and the method comprises the steps: constructing a three-dimensional discretization model representing an epitaxial wafer and an unknown parameter vector containing the vertical resistivity, the top transverse resistivity and the substrate leakage junction nonlinear resistance; a physical response function is defined, the vector is iterated through a discrete point fitting algorithm, so that the total residual error between the analog voltage difference output by the function and the actually measured voltage value under the cross-order-of-magnitude current is minimum, and the real vertical resistivity is extracted from the optimal parameter vector; and obtaining the vertical resistivity of each point on the two-dimensional test point grid so as to generate a distribution diagram and carry out anomaly detection. According to the invention, the problem of measurement distortion caused by the leakage defect of the substrate is solved, and the measurement accuracy of the vertical resistivity is improved.

The invention relates to a laser radar on-chip integrated chip based on acousto-optic modulation, an on-chip acousto-optic scanning method and a laser radar system. A plurality of groups of interdigital transducers are arranged on the lithium niobate film, two groups of chirp IDTs respectively work at a low-frequency band and a high-frequency band, and sound waves at the low-frequency band correspondingly generate a relatively large Bragg deflection angle; and the high-frequency-band sound waves correspondingly generate a relatively small Bragg deflection angle. The two groups of IDTs work cooperatively, so that two-dimensional vector scanning of a dual-frequency broadband can be realized in a chip plane; the pair of focusing IDTs can form a focusing sound field in an action area, so that the light beam subjected to two-dimensional deflection is controllably deflected in the Z direction, and the chip is endowed with the three-dimensional scanning capability. The device is high in diffraction efficiency and low in power consumption; unification of large-range search and high-precision scanning is realized; z-axis deflection is realized by integrating a special focusing type interdigital transducer, a three-dimensional scanning function is realized on a monolithic integrated acousto-optic chip, and the structure is extremely compact.

The invention relates to the technical field of semiconductor photoelectrons, and discloses a vertical-cavity surface-emitting laser with an inverted structure and a preparation method of the vertical-cavity surface-emitting laser. The vertical cavity surface emitting laser with the inverted structure comprises a heterogeneous substrate, wherein a heat dissipation functional layer, a metal adhesion layer and a metal bonding layer are arranged on the surface of the heterogeneous substrate from bottom to top; the epitaxial structure comprises a p-type electrode, an ITO current expansion layer, a SiO2 current limiting layer, a first dielectric DBR layer, a p-type GaN layer, an electron blocking layer, a quantum well active region, an n-type GaN layer, a second dielectric DBR layer and an n-type electrode from bottom to top; and the p-type electrode is positioned at the bottom of the epitaxial structure and is bonded with the metal bonding layer to form an inverted structure. According to the vertical cavity surface emitting laser with the inverted structure provided by the invention, the heat dissipation function layer and the inverted structure design effectively improve the heat dissipation capability and the current uniformity of the device, and the service life, the performance stability and the reliability of the device are remarkably improved.

The invention relates to a laser automatic frequency locking control system and method based on cold atom feedback and a matched spectrum, the system comprises a laser module, a spectrum module, a photoelectric detector, a modulation-demodulation module, a digital PID controller and a data acquisition and operation platform, and the output end of the laser is connected with the spectrum module; the detection light output by the spectrum module enters the modulation-demodulation module after passing through the photoelectric detector; an output signal of the modulation-demodulation module enters a digital PID controller, and the digital PID controller is connected with a laser for frequency scanning control and is in two-way communication with a data acquisition and operation platform through a data interface; the data acquisition and operation platform comprises a cross-correlation algorithm processing module, a frequency control logic module, a cold atom feedback processing module and an abnormity management module, and is used for calculating, feeding back, controlling and monitoring the system operation state in real time and completing the automatic frequency locking process. According to the invention, the accuracy of frequency locking point identification and the frequency locking efficiency are improved; and automatic relocking can be achieved, and long-term stable frequency locking operation is guaranteed.

The invention provides a surface-emitting gallium nitride VCSEL laser chip and an epitaxial defect suppression preparation method thereof, and relates to the technical field of laser chips, the surface-emitting gallium nitride VCSEL laser chip comprises a substrate, a low-temperature nucleating layer, a high-temperature recovery layer, a stress regulation type nano mask composite defect blocking layer, an n-type nitride DBR reflector, an active region, a polarization enhanced tunnel junction and the like, the defect blocking layer adopts an in-situ silicon nitride nano-porous mask layer to be matched with an aluminum gallium nitride / gallium nitride stress compensation superlattice layer, through pulse type lateral epitaxial overgrowth annihilation penetrating dislocation, and the n-type nitride DBR reflector adopts an AlInN / GaN lattice matching material system to be combined with a hydrogen etching interruption modification technology, so that thick film growth with zero cracks and high reflectivity is realized; a polarization enhanced tunneling junction is used at the top to replace ITO, and the hole tunneling probability is enhanced by piezoelectric polarization in InGaN, so that efficient current injection with low working voltage and no absorption loss is realized, the dislocation density and the device voltage are remarkably reduced, and the yield of an epitaxial wafer and the photoelectric conversion efficiency are improved.

This application relates to a monolithically integrated multi-wavelength topological cavity surface-emitting laser (PCSEL) array. According to one embodiment, a monolithically integrated PCSEL array includes multiple PCSELs formed from the same semiconductor layer, at least one layer of which is formed as a photonic crystal layer, or the laser also includes a separate photonic crystal layer. The photonic crystal layer includes multiple supercell structures, each with substructures having multiple independent one-dimensional parameters. At least two independent one-dimensional parameters of one or more substructures are modulated to be greater than or less than their equilibrium position to open the Dirac point of the supercell's bandgap at the equilibrium position. Around any point in the photonic crystal layer, the modulation of the two independent one-dimensional parameters of the supercell forms a vortex structure, which corresponds in parameter space to one or more turns around the equilibrium position. The supercell lattice constants of the two lasers can be different to emit lasers of different wavelengths.

The invention relates to the technical field of packaging equipment, in particular to semiconductor laser packaging equipment and a using method thereof.The semiconductor laser packaging equipment comprises a rack, a packaging table and a laser heater and further comprises an electric push rod, an air exhaust assembly and a plugging assembly, the electric push rod is arranged on the rack, and the air exhaust assembly is arranged at the output end of the electric push rod; the plugging assembly is arranged in the air exhaust assembly, the air exhaust assembly comprises an adsorption part, an air hole is formed in the adsorption part and is formed below the plugging assembly, the air exhaust assembly generates negative pressure and adsorbs a chip when being powered on and started, and the electric push rod drives the air exhaust assembly to drive the plugging assembly and the chip to move downwards when being powered on and started. Through the arrangement of the air exhaust assembly and the plugging assembly, the situation that stress is concentrated on the bonding surface of the chip and the welding flux due to local cooling can be avoided, gaps generated when the welding flux is molten can be eliminated through vibration generated by impact, and the quality and reliability of packaged products are effectively improved.

The invention discloses a semiconductor laser and a preparation method thereof, which can be used in the field of semiconductor device preparation, and the method comprises the steps: firstly, providing a first conductive type substrate; then, epitaxially growing a buffer layer of a first conduction type, a lower optical waveguide limiting layer, a quantum well active light-emitting layer, an upper optical waveguide limiting layer, a corrosion barrier layer, a current injection layer and an intrinsic ohmic contact layer on the substrate in sequence to obtain a multi-layer epitaxial layer; then, etching the multi-layer epitaxial layer to the corrosion barrier layer based on a preset pattern to form a ridge-shaped table which starts from the intrinsic ohmic contact layer and is deeply cut off to the corrosion barrier layer; and finally, performing particle doping in a region corresponding to the ridge-shaped table, and converting one sides, close to the corrosion barrier layer, of the intrinsic ohmic contact layer, the current injection layer, the corrosion barrier layer and the upper optical waveguide limiting layer into a second conduction type. Therefore, current limitation can be realized without performing multiple epitaxy like a traditional buried heterojunction, and the production cost and the process difficulty are greatly reduced.

The invention relates to the technical field of lasers, in particular to a vertical-cavity surface-emitting laser and a preparation method thereof, and the vertical-cavity surface-emitting laser comprises a substrate layer, an N-type DBR structure, a first spacing layer, an active layer, a second spacing layer and a P-type DBR structure which are stacked in sequence; wherein the P-type DBR structure is formed by alternately arranging a high-refractive-index P-type semiconductor layer and a low-refractive-index P-type semiconductor layer for a plurality of cycles, and the low-refractive-index P-type semiconductor layer is a P-type semiconductor layer containing an Al component; a low-refractive-index P-type semiconductor layer adjacent to the second spacing layer in the P-type DBR structure is used as a first oxidation limiting layer, and the molar fraction of Al component in the first oxidation limiting layer before oxidation is greater than 0.98. According to the invention, the single transverse mode output characteristic of the vertical cavity surface emitting laser under high power can be improved at least.

The invention discloses a gas real-time detection wavelength tuning control system and method based on a TDLAS technology, and relates to the technical field of wavelength tuning control, and the method comprises the following steps: collecting corresponding working temperature data and compensation current data of a semiconductor laser in a standard working state; performing reference extraction processing and temperature change extraction processing to obtain reference temperature change data; collecting temperature data of the semiconductor laser in actual work, and calculating a temperature change error in real time according to the reference temperature change data; adjusting and controlling a temperature control device of the semiconductor laser according to the temperature change error; the invention is used for solving the problem that the output wavelength of the laser cannot be stably and accurately controlled according to the characteristics of the temperature change rate while accurate and referable standard change parameters are obtained when the output wavelength of the laser is controlled by controlling the temperature in the existing wavelength tuning control technology.

The utility model relates to the technical field of laser devices, and discloses a laser assembly and a solid laser thereof, and the laser assembly comprises a liquid cooling heat dissipation block which is provided with an installation cavity arranged along the axial direction in a through manner, and is used for introducing a cooling medium; the number of the laser array modules is at least two, each laser array module comprises a strip-shaped heat conduction block and a plurality of bar units arranged in an arrayed mode, the bar units on each heat conduction block are connected in series, the heat conduction blocks are all arranged on the inner wall of the installation cavity and arranged in the circumferential direction, and the heat conduction blocks are used for conducting heat of the bar units to the liquid cooling heat dissipation block; and the heat is taken away by a cooling medium introduced into the liquid cooling heat dissipation block. By means of the mode, on the premise that it is guaranteed that the laser has high power and heat dissipation efficiency, it is guaranteed that no liquid leakage problem occurs after long-term use, the strip-shaped heat conduction blocks and the multiple strip units arranged in the extending direction of the heat conduction blocks can be replaced, and the maintenance cost of the laser is reduced.

For example, a lighting device capable of FOV switching is provided.The lighting device change a projection range of first light and a projection range of second light by causing a light-emitting unit and an optical member disposed on the optical path of the first light and the second light to act differently on the first light and the second light, the light-emitting unit including a first light-emitting element that emits the first light and a second light-emitting element that emits the second light.

The invention discloses a laser current detection and dynamic control method and system, and the method comprises the steps: 1, controlling N groups of current detection modules to carry out the real-time sampling and processing of N actual working currents IN of N lasers after a control module sets a preset current I0, obtaining N digital sampling signals, and transmitting the N digital sampling signals to the control module; step 2, the control module compares the N digital sampling signals with the preset current one by one to obtain N difference values; and the control module dynamically adjusts the duty ratio and the frequency of the N paths of PWM signals according to the N difference values, and respectively controls the N multi-channel constant current driving chips to respectively output the preset current to the N lasers. According to the method and the system, real-time dynamic adjustment of the laser current is realized, and the stability of the laser power is improved.

The invention relates to the technical field of semiconductor electronic devices, and discloses an aluminum-based quantum well laser and an in-situ interface processing method thereof. After a low-aluminum active region with a strain compensation structure is grown and before a high-aluminum electron barrier layer is grown, the in-situ interface treatment method comprises the following steps: maintaining the temperature of a substrate at a first temperature for a first time in a V-group source atmosphere; reducing the temperature of the substrate from the first temperature to a third temperature, and introducing an aluminum source to perform strain surface pre-adsorption; introducing an aluminum source and other III-group sources except the aluminum source to grow a high-aluminum nucleating layer; and raising the temperature of the substrate from the third temperature to a fourth temperature, and growing the main body part. According to the in-situ interface processing method, the low-defect interface is obtained through the steps of strain surface relaxation, aluminum atom pre-adsorption, low-temperature nucleation and solid-state epitaxial conversion, lattice connection is achieved between the high-aluminum electron barrier layer and the low-aluminum active area with the strain compensation structure below, and the defect density of the interface is effectively reduced.

The invention discloses a laser chip ohmic contact annealing optimization method and related equipment. The method comprises the steps that a metal electrode and a conductive mark layer are formed on the surface of a semiconductor through deposition; applying electrical excitation to the conductive mark layer and collecting electrical response in the annealing temperature rise stage to establish an initial response reference of the position of the conductive mark layer; in the annealing heat preservation stage, the electrical response change of the conductive mark layer is monitored, and the real-time response is compared with the initial response reference so as to judge the ohmic contact forming state of the position where the conductive mark layer is located; and adjusting annealing process parameters according to the judgment result of the ohmic contact forming state. According to the scheme, in-situ monitoring and self-adaptive adjustment of ohmic contact forming states at different positions in the annealing process can be achieved, and the uniformity and yield of ohmic contact of the laser chip are improved.

To provide an optical waveguide component that makes it easy to align an optical waveguide and an optical fiber.SOLUTION: An optical waveguide component is provided, comprising a first support member having a first surface, and an optical waveguide supported by the first support member and provided with a first core having a first end face exposed from the first surface, where the first surface has a plurality of recesses formed thereon.SELECTED DRAWING: Figure 3