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5145results about "Semiconductor lasers" patented technology

Aperiodic dielectric multilayer stack

ActiveUS20050266218A1Different thicknessLaser detailsLayered productsDielectricOptical cavity
A structure is provided that includes an aperiodic dielectric stack. The structure may include a substrate, a device disposed over the substrate, and a first dielectric stack disposed between the substrate and the device. The first dielectric stack includes a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses, as well as a plurality of layers comprising a second dielectric material. The average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm may be at least 40% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack. The substrate may have a treated surface such that light that may otherwise be waveguided in the substrate is outcoupled into air, and the average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm may be at least 10% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack. The structure may include an optical cavity defined by a first end layer and a second end layer, where the first end layer further comprising a first dielectric stack having a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses, and a plurality of layers comprising a second dielectric material. An optoelectronic device having a first active layer may be disposed within the optical cavity.
Owner:THE TRUSTEES FOR PRINCETON UNIV
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