6174results about "Semiconductor lasers" patented technology

To solve the problem in which: electric charges generated by a tunnel effect increase in proportion to the area of a region where the electric charges are detected; and when the area of the region where the electric charges are detected is reduced, light detection efficiency may be reduced.SOLUTION: The magnitude of the potential of a fourth semiconductor region is lower than the magnitude of the potential of a portion between the fourth semiconductor region and a third semiconductor region, and the difference between the magnitude of the potential of a first semiconductor region and the magnitude of the potential of a second semiconductor region is larger than the difference between the magnitude of the potential of the fourth semiconductor region and the magnitude of the potential of the portion between the fourth semiconductor region and the third semiconductor region. The magnitude of the potential of the third semiconductor region is lower than the magnitude of the potential of the fourth semiconductor region, and the difference between the magnitude of the potential of the first semiconductor region and the magnitude of the potential of the third semiconductor region is larger than the difference between the magnitude of the potential of the second semiconductor region and the magnitude of the potential of the fourth semiconductor region.SELECTED DRAWING: Figure 1

The invention discloses a vertical cavity surface emitting laser and a preparation method thereof. The preparation method of the vertical cavity surface emitting laser comprises the following steps: growing a semiconductor epitaxial structure with a lower reflecting mirror layer, an active layer and an upper reflecting mirror layer which are sequentially arranged from bottom to top on a substrate to form a wafer; depositing an ohmic metal layer, and etching the semiconductor epitaxial structure until the lower reflector layer is exposed to form a plurality of grooves; performing ion implantation on the side wall and the bottom of each groove to form a plurality of insulating regions; the insulating region comprises a side wall insulating region in contact with the side wall of the groove and a bottom insulating region in contact with the bottom of the groove; the depth of the side wall insulation region is greater than that of the groove; the semiconductor epitaxial structure is jointly divided into a plurality of semiconductor units which are mutually isolated on the active layer by the grooves and the insulating regions; and each semiconductor unit comprises a lower reflecting mirror, an active region, an upper reflecting mirror and an ohmic electrode which are sequentially arranged from bottom to top. According to the embodiment of the invention, the robustness of the vertical cavity surface emitting laser can be improved.

A pest control system is disclosed comprising an optical, computational, and monitoring subsystem, optionally mounted on a mobile platform. The optical system may include a neutralizing laser or multi-wavelength light source, discovery and detail cameras (optionally stereo), a beam-steering mechanism, tunable focus, and optional thermal or depth sensors. The processor, such as a GPU or FPGA, identifies insect or biological targets, adjusts laser focus by depth, and controls beam activation. A monitoring system verifies safety by detecting humans or other non-target entities using environmental and thermal cameras; if detected, laser firing is inhibited. The mobile platform may use wheels, propellers, tracks, or cables, with GPS and data links for remote control. A visible light pre-flash may induce a blink reflex before firing. In some embodiments, a scouting drone transmits target coordinates to the neutralization unit, enabling coordinated, efficient, and safe laser-based pest control.

The invention discloses a temperature control and noise reduction method for an analog optical module, and relates to the technical field of data processing. The method comprises the following steps: collecting and preprocessing an original temperature signal, environment temperature time sequence data and an optical wavelength original detection value of an optical module; improving the LSTM model, constructing a junction temperature dynamic prediction model, and outputting prediction data; a pre-trained BP neural network is utilized to calculate the temperature compensation amount according to the real-time wavelength offset, and a PPO reinforcement learning algorithm is adopted to optimize with the temperature stability, the wavelength offset and the TEC power consumption as multiple targets to obtain an optimal PID parameter mapping table; and finally, predicting, compensating and optimizing parameters are fused, and control output for driving the TEC is generated through a multi-mode intelligent decision. The problems of insufficient control precision and response lag are effectively solved, cooperative high-precision control over the junction temperature and the emission wavelength of the laser is achieved, transmission noise is remarkably reduced, and meanwhile system energy consumption and the self-adaptive capacity are considered.

The invention discloses a laser control system and a spectral analysis system. The laser control system comprises an ARM module and a laser control module, the laser control module comprises a TEC module and a DA module; the TEC module is in communication connection with the ARM module, when the laser is started to work, the ARM module judges whether the detected laser shell temperature is within a preset range, if the detected laser shell temperature is within the preset range, the TEC module does not work, otherwise, the ARM module controls the TEC module to start to work until the TEC module reaches a preset target temperature, and stable work is kept; and the DA module is in communication connection with the ARM module, an LD current feedback circuit is arranged in the DA module, the ARM module calculates the error between the current power and the target power according to the current data acquired by the LD current feedback circuit, and then the DA module is driven to adjust the output power of the laser in real time, so that the laser stably operates near the target power. And the power loss of the laser is effectively reduced.

The invention relates to the technical field of laser adjustment, in particular to a semiconductor laser module leveling device and a use method thereof, and the device comprises a laser offset detection module, an offset calculation module, an interference measurement analysis module, a driving compensation execution module and an error compensation optimization module. According to the invention, the light spot center position of the semiconductor laser module is precisely monitored and compared with the target position, and the position deviation between the light spot and the target is recorded and calculated in real time, so that the laser alignment precision can be improved, the position of the laser module is adjusted by utilizing the precise movement of the micropositioner, and the transmission effect of the laser beam is further optimized; according to the method and the device, errors caused by tiny movement or external changes of the device are reduced, the cooperative work efficiency among a plurality of laser modules is remarkably improved by comprehensively analyzing adjusted data and optimizing an error compensation strategy, high-quality laser output and application effects are ensured, and the yield and the research precision can be remarkably improved.

The invention relates to a light spot uniformity optimization method and system for a high-precision VCSEL device, and the method comprises the following steps: carrying out the light field collection of a light-emitting surface of the VCSEL device, obtaining the intensity distribution of original light spots, analyzing the non-uniformity of each light-emitting unit, and extracting the non-uniformity characteristics of the light spots. And carrying out deviation cause analysis based on the characteristics, and identifying device structure deviation parameters. According to the method, an etching process is optimized, a corrected oxidized aperture configuration scheme is obtained, near-field light field simulation is carried out by adopting a finite difference time domain method, and optimized light field distribution is verified and predicted. And finally, adaptive compensation design is carried out on the Bragg reflector structure based on a prediction result, light field regulation and control are realized, target light spot uniformity distribution is finally obtained, and the problem that systematic analysis and feedback control on non-uniformity causes of a light emitting unit layer in a device are lacked in the prior art is solved. And local bright spots or dark areas are caused.

The invention relates to the technical field of semiconductor lasers, in particular to a temperature regulation and control device and method for a semiconductor laser, and the method comprises the steps: obtaining different types of monitoring curves, and analyzing the complex change characteristics of operation temperature and operation power according to the monitoring curves, so as to determine a heat accumulation effect index; determining the degree of efficiency loss caused by the heat accumulation effect by analyzing the correlation among the operation temperature change, the operation power change and the threshold current change and combining the heat accumulation effect index; then determining a temperature regulation and control demand coefficient by analyzing the temperature feedback control precision condition and the thermal dynamic characteristic of the semiconductor laser and combining the efficiency loss degree; and finally, a default proportional gain value in the PID control module is adjusted by using the temperature regulation and control demand coefficient to obtain an adjusted proportional gain value so as to carry out temperature regulation and control on the semiconductor laser, which is beneficial for the temperature regulation and control device to respond to the change of the working environment of the laser in time.

The invention relates to the technical field of semiconductor laser power supplies, in particular to a semiconductor laser power supply control circuit based on linear constant current and a method thereof. According to the technical scheme, the circuit comprises a voltage follower module, a linear constant-current driving module, a power switch module, a pulse control module, a sampling feedback module and a follow current protection unit. The in-phase input end of an operational amplifier OPA320 of the voltage follower module is connected with external reference voltage # imgabs0 #, the inverted input end of the operational amplifier OPA320 is grounded through a first resistor R1 and connected with the output end through a second resistor R2, and a filter capacitor C1 is connected to the two ends of the second resistor R2 in parallel. Through a linear constant current control and pulse cooperation mechanism, the current stability and the dynamic response speed of the semiconductor laser under the wide-range and high-frequency working condition are remarkably improved, and it is guaranteed that the laser output power is accurate and reliable.

An optical transceiver module and an optical cable module using the same are provided. The optical transceiver module: a substrate; at least one optical receiving device connected to the substrate; a plurality of optical transmitting devices connected to the substrate, wherein the optical transmitting devices comprise a plurality of first optical transmitting devices and a plurality of second optical transmitting devices, and the optical transmitting devices are misaligned to each other.

The invention belongs to the field of heat dissipation, and particularly relates to a heat dissipation device for a semiconductor laser, which comprises a semiconductor laser shell and a cover plate arranged on the semiconductor laser shell, and the semiconductor laser shell and the cover plate enclose to form a cooling working medium flowing space; a micro-channel groove is formed in one side, close to the cover plate, of the semiconductor laser shell; a first cooling working medium drainage hole and a second cooling working medium drainage hole are formed in one side, close to the semiconductor laser shell, of the cover plate; and the first cooling working medium drainage hole and the second cooling working medium drainage hole are respectively communicated with a first interface and a second interface which are arranged on the cover plate. Compared with the prior art, the micro-channel groove structure is designed on the back surface of the semiconductor laser shell, so that a cooling working medium flowing path is matched with a heat source which is distributed in a stepped manner, the semiconductor laser is ensured to maintain a relatively low temperature in a working process, the heat dissipation efficiency is remarkably improved, the stability of equipment is improved, and the service life of the equipment is prolonged.

The invention belongs to the technical field of semiconductors, and particularly relates to a VCSEL laser with a small divergence angle, which comprises a substrate layer, a first Bragg reflector arranged on the substrate layer, an active region arranged on the first Bragg reflector, and a second Bragg reflector arranged above the active region, wherein a current limiting layer for blocking current to enable the current to enter the active area in a concentrated manner is arranged above the active area, a limiting hole for the current and laser to pass through is formed in the current limiting layer, a light emitting area is defined by the limiting hole, and at least one sharp corner is arranged on the limiting hole. On the premise that the equivalent limiting holes are the same, multilateral or irregular limiting holes with sharp-corner outlines are formed through mask pattern design in combination with ion implantation or etching and oxidation processes, so that the high-order film state can be inhibited, and the divergence angle can be reduced.

The invention provides a quasi-continuous thulium-doped fiber laser capable of synchronously suppressing relaxation oscillation and self-pulse, relates to the technical field of fiber laser, and is used for simultaneously realizing suppression of a self-pulse effect and a relaxation oscillation peak. Comprising a continuous driving module, a pulse driving module, a semiconductor laser pumping source, a high-reflectivity fiber bragg grating, a low-reflectivity fiber bragg grating, a beam combiner, a thulium-doped gain fiber, a passive fiber, a cladding pumping stripper and a laser output port, the continuous pump light and the pulse pump light are respectively driven by the continuous driving module and the pulse driving module to output continuous pump light and pulse pump light; the high-reflectivity fiber bragg grating and the low-reflectivity fiber bragg grating form a resonant cavity structure, the thulium-doped gain fiber serves as a gain medium of the thulium-doped fiber laser and absorbs pump light to generate population inversion, laser oscillation is formed by combining the resonant cavity of the laser, relaxation oscillation suppression is achieved, and meanwhile longitudinal mode distribution of the laser is effectively disrupted.

The invention relates to the technical field of lasers, in particular to a laser heat management device and a control method thereof, the laser heat management device comprises a cooling substrate, the cooling substrate is internally provided with a micro-channel, the micro-channel comprises a main channel and a branch channel, and the main channel is used for circulating cooling water; the cooling substrate is provided with a detection control area, the detection control area is located at the joint of the branch channel and the main channel, the detection control area is provided with a phase change micro-valve and a detection assembly, the detection assembly is used for collecting temperature data, the phase change micro-valve comprises a phase change material and a flexible separation blade, and after the valve is opened, the phase change material generating phase change pushes the flexible separation blade, and the phase change micro-valve is connected with the detection assembly. The communication state of the main channel and the branch channel is controlled; the main controller is used for receiving the temperature data of all the detection control areas and controlling the valves of the corresponding detection control areas to be opened or closed according to the deviation between the temperature data and the target temperature. The temperature gradient of the laser can be reduced at least so as to ensure that the laser realizes a long-term stable working state.

The invention discloses a multi-output high-performance integrated laser driver driving method, relates to the technical field of integrated laser driver driving, and aims to solve the problem of poor signal stability of a multi-output channel of an existing laser driver. A monitoring module is installed on each output channel, the quality of output signals and the running state of a driver are monitored in real time, immediate feedback is provided, the reliability of the system is ensured, a driver control strategy is automatically adjusted and corrected according to early warning data, it is ensured that the system can be rapidly recovered to the optimal state after an abnormality occurs, and the reliability of the system is improved. The self-adaptive capability of the system is improved, the system performance can be further optimized through a secondary driver control strategy obtained through automatic adjustment and correction, manual intervention is reduced, the intelligent level of the system is improved, and a personalized control strategy for a specific application scene can be generated through deep performance analysis. Therefore, the driver is better in performance in a special application environment.

A semiconductor laser light source device includes a metal stem; a first support block provided on the metal stem and is electrically conductive; a temperature control module provided on the metal stem; a second support block provided on the temperature control module and is electrically conductive; a first substrate provided on a first side surface of the first support block; a second substrate provided on a second side surface of the second support bloc; a photosemiconductor chip provided on the second substrate; an electrically conductive cap provided on the metal stem and covers the first support block, the temperature control module, the second support block, the first substrate, the second substrate, and the photosemiconductor chip; and a metal block provided between the second support block and the cap.

The invention discloses a packaging method and device of a vertical cavity surface emitting laser, and belongs to the field of semiconductor laser chip packaging processes. The packaging heat dissipation cover is additionally arranged on the top of the VCSEL chip, the VCSEL chip is surrounded up and down by the packaging heat dissipation cover, the supporting connecting block and the bottom heat sink component, and the heat dissipation mode of the top of the device is adjusted from low-efficiency heat radiation to air to heat conduction through a high-heat-conductivity solid material. Compared with the prior art, the heat conduction capability of a medium near the center of a heat source can be effectively improved, and the blocking effect of a top DBR material on heat is remarkably reduced. In addition, the transverse component of heat flow at the top is further increased by using a chamfering structure in the through hole and a two-dimensional transparent heat conduction material, and the efficiency of the heat of the VCSEL chip flowing to the two sides of the top is improved.

A device (1) for emitting light, the device (1) comprising: a substrate (2); abase layer (4) arranged on the substrate (2); a diode layer structure (10) arranged on the base layer (4), the diode layer structure (10) comprising a quantum well layer structure (30) sandwiched between an n-doped semiconductor layer (12) and a p-doped semiconductor layer (14); the quantum well layer structure (30) comprising a first (41) and second (42) quantum well, a first (51) and a second (52) proximal barrier layer, and a first (61) and a second (62) distal barrier layer, wherein the first (41) and second (42) quantum wells and the first (51) and second (52) proximal barrier layers are sandwiched between the first (61) and second (62) distal barrier layers

The present disclosure provides a method, apparatus, medium and device for calculating the wafer layout of a wafer, belonging to the field of semiconductor technology. The method includes: based on the distribution array of each wafer, taking any wafer as a reference wafer, moving the wafer center in a preset area according to a first step length to determine the first coverage area after each movement, and determining the feasible area of the reference wafer according to the number of complete wafers in the coverage area; moving the wafer center in the feasible area according to a second step length to determine the second coverage area after each movement, and determining the maximum number of complete wafers in the coverage area; placing the reference wafer at different positions in the single-exposure area in turn according to the wafer position distribution pattern of the single-exposure area of the lithography machine to determine the minimum number of exposures for exposing all wafers; determining the positions of each wafer according to the maximum number and the minimum number of exposures to generate a wafer layout. The present disclosure can improve the accuracy and efficiency of calculating the maximum number of wafers.

To improve the luminous efficiency of a UV light-emitting device, the UV light-emitting devices disclosed herein have an AlGaN-based crystal or an InAlGaN-based crystal, and comprise an emission layer, at least one electron blocking layer, a first p-type doped layer, and a composition gradient layer in which the Al composition ratio varies depending on the position over a thickness direction of the layer stack, stacked in this order in the direction of the flow of electrons. The Al composition ratio varies depending on the position over the thickness direction in the composition gradient layer. The UV light-emitting devices are implemented as UV-region light-emitting diodes and laser diodes.

The invention relates to the technical field of laser chips, in particular to a wide-wavelength electro-absorption modulated laser chip and a preparation method and application thereof. According to the wide-wavelength electro-absorption modulated laser chip provided by the invention, a plurality of specific areas are divided on a substrate, a first modulator layer, a first front grating layer and a second modulator layer are sequentially arranged on the areas, and phosphorus ions are injected into the first modulator layer and the second modulator layer. The key sampling grating is arranged in the first front grating layer, the rear grating layer and the second front grating layer in an electron beam direct writing mode. A cladding layer and an electric contact layer are sequentially stacked above all the functional layers, an electric isolation trench is formed between the functional layers through etching, the uppermost layer is a P-surface electrode, and an N-surface electrode is arranged below the substrate. According to the chip, the same post-sampling grating reflection area is utilized, double-end modulation is integrated through the quantum well hybrid technology, the effects of double-end light emitting and rate and wavelength tuning performance doubling of the same integrated chip are achieved, and the power consumption of the integrated chip is greatly reduced.

The exponential growth in deep learning models is challenging existing computing hardware. Optical neural networks (ONNs) accelerate machine learning tasks with potentially ultrahigh bandwidth and nearly no loss in data movement. Scaling up ONNs involves improving scalability, energy efficiency, compute density, and inline nonlinearity. However, realizing all these criteria remains an unsolved challenge. Here, we demonstrate a three-dimensional spatial time-multiplexed ONN architecture based on dense arrays of microscale vertical cavity surface emitting lasers (VCSELs). The VCSELs, coherently injection-locked to a leader laser, operate at gigahertz data rates with a 7T-phase-shift voltage on the 10-millivolt level. Optical nonlinearity is incorporated into the ONN with no added energy cost using coherent detection of optical interference between VCSELs.

The invention relates to the technical field of semiconductor lasers, in particular to a secondary photoetching graphical metal electroplating process method, which comprises the following steps of: taking a wafer after front metal ohmic contact, uniformly coating photoresist for the first time, and pre-baking for the first time; performing primary exposure on the photoresist, and performing primary post-baking; carrying out primary development to obtain a primary reserved photoresist; a Ti-Ag metal thin layer is formed through sputtering; secondary photoresist homogenizing and secondary pre-baking are carried out; carrying out secondary exposure and secondary post-baking; performing secondary development to obtain a secondary reserved photoresist, the size of the secondary reserved photoresist being greater than the size of the primary reserved photoresist; electroplating an Au metal layer; stripping the photoresist layer to obtain a patterned Ti-Ag-Ag metal layer; the invention provides a process method capable of effectively improving the thickness uniformity of electroplated metal and reducing the process difficulty, the process method is not limited by a metal layer region and an insulating layer region on the surface of a wafer, the electroplated thick metal can uniformly cover each region, and the uniformity can reach 8%.

The invention relates to the technical field of lasers, and discloses a vertical cavity surface emitting laser structure and a preparation method thereof. The preparation method comprises the steps that an epitaxial structure comprising a first reflector layer, a first limiting layer, an active layer, a second limiting layer and a second reflector layer is formed on the surface of one side of a substrate layer, and the epitaxial structure is provided with a light emitting area; an oxidation groove extending into the first reflector layer from the second reflector layer is formed in the light emitting area; forming an oxidation layer with an oxidation hole in the second reflector layer of the light emitting area; ion implantation is carried out on the epitaxial structure to form an ion implantation region and a current implantation region, the current implantation region surrounded by the ion implantation region is located in the light emitting region, and the projection of the current implantation region on the substrate layer covers the projection of the oxidation hole. On the premise that the oxide layer with the oxidation hole is formed, the ion injection region surrounding the current injection region and the oxidation hole is accurately and efficiently controlled to be formed in an ion injection mode, and the reliability, the bandwidth performance and the transmission rate of the laser structure can be effectively improved.

The invention relates to the technical field of data processing, in particular to a real-time data monitoring and early warning method for the growth process of a VCSEL epitaxial wafer, which comprises the following steps: acquiring the refractive index of a material used by the epitaxial wafer at the current moment in the growth process of the VCSEL epitaxial wafer by using MOCVD (Metal Organic Chemical Vapor Deposition) equipment; determining the growth rate of the epitaxial wafer at the current moment; determining the mutation degree of the growth rate of the epitaxial wafer at the current moment; determining the correction mutation degree of the growth rate of the epitaxial wafer at the current moment; determining an early warning threshold value at the current moment; and monitoring and early warning of real-time data in the growth process of the VCSEL epitaxial wafer are realized according to the corrected mutation degree and the early warning threshold value. According to the method, accurate inversion of the growth rate and intelligent identification of mutation are realized, abnormal and normal process changes are effectively distinguished, the early warning threshold is adaptively adjusted, the false alarm rate is reduced, and the accuracy and practicability of VCSEL epitaxial growth monitoring are improved.

A vertical-cavity surface-emitting laser (VCSEL) may include a first top mirror structure over a cavity region. The VCSEL may include a grating layer over the first top mirror structure. The grating layer may comprise a plurality of oxidized regions that form a grating structure in the grating layer. The grating structure may be associated with polarization of output light emitted by the VCSEL. The surface of the grating layer may be a planar surface.

The utility model discloses a semiconductor laser. The semiconductor laser comprises a tube shell which comprises a base and a wall seat, the base is provided with a mounting surface, and the wall seat is arranged on the mounting surface of the base and is provided with a plurality of parallel step surfaces perpendicular to the mounting surface; the plurality of collimation light path groups are arranged on the mounting surface, correspond to the step surfaces in sequence and are used for emitting a plurality of collimation light beams along a first direction parallel to the mounting surface; and the multi-path reflecting mirror group is sequentially arranged on each step surface and is used for reflecting the multi-path collimated light beams to a plane higher than the mounting surface and transmitting the multi-path collimated light beams along a second direction parallel to the mounting surface, and the second direction is different from the first direction. Through the mode, the semiconductor laser provided by the utility model can uniformly dissipate heat of the laser chip in the semiconductor laser, the cooling water channel of the base is easy to process, the light path shaping and adjusting difficulty is small, and the size of the semiconductor laser can be effectively reduced.

A light emitting device includes plural light emitting blocks, each including a light emitting element and a setting element that sets the light emitting element in a state of being able to be turned on, and a discharge path that includes a discharge element capable of controlling discharge in a case where the light emitting element is turned off and through which charges accumulated in a case where the light emitting element is turned on are discharged, in which the plural light emitting blocks and the discharge path are electrically connected in parallel.

The invention relates to the technical field of laser preparation, and provides a photonic crystal surface emitting laser and a preparation method thereof. The preparation method comprises the following steps: sequentially growing an n-type doped layer, a p-type independent limiting layer and a p + / n + tunnel junction on a GaAs substrate; preparing a patterned mask structure on the p + / n + tunnel junction; the patterned mask structure comprises a plurality of preset patterns; etching the p + / n + tunnel junction according to a preset pattern to obtain a plurality of photonic crystals; sequentially growing an n-type coating layer, an undoped active layer and a p-type coating layer on the photonic crystal; growing a p-type electrode on the p-type coating layer; and growing an n-type electrode on the GaAs substrate. According to the preparation method, the SHB problem can be effectively solved, the multiple photonic crystals can be arranged in different modes to form a pattern capable of achieving the needed light emitting mode, light emitting in all directions can be achieved, the requirements for different light emitting characteristics of the photonic crystal surface emitting laser are met, and the use performance of the laser is guaranteed.

In some implementations, an optical emitter includes a substrate with a surface that is off-cut relative to an orientation of a crystallographic plane of the substrate; a first set of layers disposed on the substrate and forming an active region of a light emitting junction, wherein the first set of layers includes a gallium-arsenic-nitrogen (GaAsN) material layer, wherein the GaAsN material layer forms a quantum well barrier, wherein the first set of layers further includes an indium-gallium-arsenic-nitrogen-antimony (InGaAsNSb) layer, wherein the InGaAsNSb layer is a strained, dilute nitride InGaAsNSb layer forming a quantum well; and a second set of layers forming a first distributed Bragg reflector (DBR) and a second DBR, wherein the active region is disposed between the first DBR and the second DBR.