67 results about "Growth orientation" patented technology

A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

A multiple layer structure comprising a pair of spaced-apart crystalline layers of different materials with an intermediate crystalline layer between and in contact with each of the pair of crystalline layers, the intermediate crystalline layer providing one of the crystalline layers of the pair with a stronger out-of-plane preferred growth orientation than if each of the pair of crystalline layers are in overlying contact. Disclosed and preferred embodiments include perpendicular magnetic recording media comprising the multiple layer structure as an intermediate layer structure beneath a perpendicular magnetic recording layer for strengthening a preferred out-of-plane growth orientation of the latter.

The invention discloses a molybdenum disulfide nano tube and a preparation method thereof. The invention takes ammonium thiomolybdate ((NH4)2MoS4) as raw material, uses AAO (anodic aluminum oxide) as a template, uses hydrogen (H2) as a reducer, uses nitrogen (N2) as protective gas and controls the growth direction of products by restrictive effect of upper holes of the template, thus synthetizing a molybdenum disulfide nano tube array with high isotonicity in size and growth orientation by large amount under the relative low temperature condition and solving the problem of the size and size distribution of the molybdenum disulfide nano tube. The method has simple technique and low cost; and the prepared molybdenum disulfide nano tube can be widely used as a solid lubricating agent, a hydrodesulfurization catalyst, a semiconductor material, an intercalation material and an anhydrous lithium battery material and the like, and is applicable to large-scale industrial production.

The invention relates to an alterant of an iron-rich phase in secondary aluminum and an alteration method. The alterant is composed of a [Mn] agent and a [B] agent. The alteration method includes the steps that part of secondary aluminum is heated to form a melt, then the [Mn] agent is added, the remaining secondary aluminum is added after the [Mn] agent melts, the [B] agent is added, refining is carried out after the [B] agent melts, pouring is carried out after standing is carried out for a period of time, and the secondary aluminum obtained after alteration treatment is obtained. According to the alterant and the alteration method, the Fe element in the iron-rich phase can be replaced through the [Mn] agent, the advantage growth orientation of the iron-rich phase is changed, and therefore a needle-like beta-Fe phase is eliminated; meanwhile, the forming temperature of the iron-rich phase can be reduced through B in the [B] agent, the growth time of a primary iron-rich phase is shortened, the growth space of the primary iron-rich phase is reduced, the B can also serve as a surface-active element, and is absorbed to the surface of the iron-rich phase in the initial phase of formation of the iron-rich phase, and growth of the iron-rich phase is restrained, so that through the combined action of the [Mn] agent and the [B] agent, existence of the needle-like iron-rich phase and the primary iron-rich phase can be completely eliminated, the uniform Chinese character type iron-rich phase is obtained; and in addition, the adding amount of the Mn can be greatly reduced, and the mechanical performance and the machining performance of the secondary aluminum can be greatly improved.

A method for preparing rare earth barium copper oxide superconducting block material comprises the steps of executing calcining and grinding processes in turn after mixing the RE123 and RE211 in the mole ratio of 100: (20-35); pressing the ground powder into precursor bottom piece and precursor top piece respectively; putting the precursor top piece on top of the precursor bottom piece; putting seed crystal on the precursor top piece, then putting the precursor bottom piece on a zirconium oxide bead substrate; rising temperature for heating in a sealing container, and then cooling to prepare the rare earth barium copper oxide superconducting block material. The method can prepare the high temperature superconducting block material with high performance, large single domain structure and good growth orientation under the conditions that no impurity exists and crystal lattices match completely, thereby solving the key problems of the growth and application of the superconducting block material.

The invention discloses a nanocluster loaded type metal organic framework thin film and a preparation method and an application thereof. Nanoclusters are loaded on a metal organic framework thin film by a liquid phase epitaxial growth method. The method can accurately control the thickness and area of the thin film in the preparation process, ensures growth orientation and thin film thickness uniformity, and makes the formed nanocluster loading have high efficiency, high orientation and uniformity. Because the loaded nanoclusters of each layer can fall inside pore channels of the metal organic framework, the nanoclusters are loaded in each layer while the growth of the metal organic framework is not affected, and thus the nanocluster loaded type metal organic framework thin film is effectively synthesized. The method has the advantages of fast synthesis speed, high efficiency of nanocluster loading, controllability of the thin film thickness, flexible selection of a growth substrate according to the need and the like, and provides a convenient method for large-scale preparation in sensors, devices and other thin-film products.

The invention relates to the field of production of semiconductor materials and provides a production method of a cubic MgZnO film. The production method includes the steps of, preparing a Mg0.5Zn0.5O target; placing a substrate in a cavity, heating the substrate to 400 DEG C-500 DEG C, introducing 10sccm-70scm oxygen to keep the pressure intensity of the cavity at 4-8Pa, and subjecting the Mg0.5Zn0.5O target to pulse deposition on the substrate so as to obtain the cubic MgZnO film. Growth orientation of the cubic MgZnO film can be effectively controlled according to different migration energies of deposition atoms under different growth conditions, and the convenient and effective means for producing different-orientation high-quality cubic MgZnO multicomponent alloy films is provided.

Provided is a method for detecting a profile phenotype of arabidopsis. The method includes the steps that a calibration board is placed in a planting pot of the arabidopsis, an RGB image of the arabidopsis is collected through a camera, the collecting image is preprocessed, automatic correction and calibration of the image are achieved, image correction is used for correcting deformation of the image, image calibration is used for obtaining a real size of a unit pixel, the preprocessed image is divided, the arabidopsis is separated from the background and extracted from the image, after the arabidopsis image is separated, a profile phenotype parameter of the arabidopsis is extracted, and an overall profile of the arabidosis is quantitatively described through an oval Fourier descriptor. The differences of the overall profile and growth orientation of the arabidopsis with different genes can be described through analysis of the profile phenotype parameters, and accordingly the function of different genes and influences of the different genes on the arabidopsis can be concluded.

The invention discloses a one-dimensional cadmium sulfide nanorod catalyst, and a preparation method thereof and an application thereof in producing hydrogen through acoustic catalytic cracking of water. The catalyst has a wurtzite crystal structure, and is non-centrosymmetric crystal. The catalyst satisfy the structural condition of piezoelectric crystal. The specially oriented nanorod shape of the catalyst can enrich environmental soundwave energy through piezoelectric effect, such that negative charge is produced on the surface of the nanorods. Therefore, pure water cracking is catalyzed, and hydrogen gas is produced. The preparation method mainly relates to a one-step solvothermal method. Cadmium sulfide growth orientation is regulated with the coordination or chelation effect of crystal seeds and diethylenetriamine solvent molecules, and the one-dimensional nanorod morphology is obtained under appropriate reaction temperature and reaction time conditions. The activity of the obtained cadmium sulfide nanorods for cracking pure water to produce hydrogen under sound driving is substantially higher than those of nano-flake wurtzite-type cadmium sulfide sample, micro-spherical wurtzite-type cadmium sulfide sample, and nanorod wurtzite-type cadmium sulfide samples obtained with a traditional two-step synthesis method. The cadmium sulfide nanorod catalyst provided by the invention has a good application prospect in the field of sound energy-hydrogen energy conversion. The preparation method is simple to operate, and is suitable for industrialized production.

A perpendicular magnetic recording medium including an interlayer structure for crystallographically orienting a layer of a hexagonal close-packed (hcp) perpendicular magnetic recording material formed thereon, comprising in overlying sequence from a surface of a magnetically soft underlayer:

• • (1) a first crystalline layer of a material having a first lattice parameter and a strong preferred growth orientation;
  • (2) a second crystalline layer of a material having a second lattice parameter and the same strong preferred growth orientation as the first crystalline layer; and
  • (3) a third crystalline layer of an hcp material, having a [0002] lattice parameter similar to or different from that of the second lattice parameter of the second crystalline layer and a strong <0002> preferred growth orientation, wherein:
  • the second crystalline layer has a lower interfacial energy with the first crystalline layer and a higher interfacial energy with the third crystalline layer, owing to a lower surface energy of the first crystalline layer and a higher surface energy of the second crystalline layer.

The invention discloses a method for planting leaf-used lycium barbarum, relates to a method for planting leaf-used plants and belongs to the field of agricultural planting. The method is characterized by comprising steps of preparing nutrient solution A, nutrient solution B and nutrient solution C; and spraying the nutrient solution A on lycium barbarum leaves when leaf primordia of the lycium barbarum leaves are formed, spraying the nutrient solution B on the lycium barbarum leaves in a middle growth period of the leaves, and spraying the nutrient solution C on the lycium barbarum leaves in a vigorous growth period of the leaves. The method has the advantages that nutrients required by the leaves in different growth periods are different, so that the growth orientation of the lycium barbarum can be changed by applying different fertilizers, leaf fertilizers are emphasized instead of fruit fertilizers, and the purpose of increasing the quantity of the lycium barbarum leaves is achieved; each nutrient solution contains various components such as growth promoters, induction-resistant chemical substances and nutrient substances, and is scientifically proportioned, the disease resistance and the like of the leaves can be effectively improved while the growth and the development of the lycium barbarum leaves are promoted, and diseases are suppressed; and the method plays an important role in aspects of reducing the application amount of chemical pesticides to the leaves and residue of the chemical pesticides.

The invention relates to a process that inside diameter slicing machine is used to cut level gallium arsenide single-crystal wafer, which comprises following procedures. (1) edge cutting treatment is carried out for level gallium arsenide single-crystal ingot with the length of 50-500mm. (2) the single-crystal ingot is bonded with the surface of graphite strip and the surface of graphite support. (3) bonded single-crystal ingot is fixed on the ingot-pushing device of inside diameter slicing machine. (4) cutting blade is installed; switch is on and the machine runs. (5) working table is lift and a piece of wafer is cut to confirm crystal orientation; after confirmation calibrating thickness of single-wafer cutting is set; said cutting orientations are parts of (100) to the nearest [100] and [011]; the angle between the crystal orientation and the growth orientation of gallium arsenide single crystal is 54degree 44'. (6) cutting speed is set to cut wafers in multiple piece automatically and continuously. (7) after the whole single-crystal ingot is cut cutting blade is washed and machine is off. Level gallium arsenide single-crystal wafer with the diameter of Phi50. 8mm-Phi76mm and the thickness of 280um-470um can be cut in the process and average production yield can be more than 95%. Production stability and repeatability are good and mass production can be realized.

The present invention discloses a growth orientation of the dielectric constant adjustable strontium titan-ate thin films lead the preparation method, in the first coated onto a glass substrate at the end of the ITO electrodes drawn orientation induced by PT terbium-doped layer; again in terbium-doped Miscellaneous PT orientation induced layer deposition PST film; terbium-doped layer is induced by PT orientation (100) preferred orientation, the film also has PST (100) preferred orientation. The present invention through the random orientation of the substrate orientation PT induced by layer, induced by a high degree of preferred orientation of the PST film, avoid conventional film orientation of the single crystal substrates for high dependence at the same time this invention can be obtained relatively PST Films high scalability, high-performance approach for preparing a new film PST; PT induced orientation of the film can PST induced orientation, and promote the crystallization PST; whole process is simple to prepare low temperature, short cycle , the energy and cost savings with good market prospects.

The invention discloses a preparation method capable of controlling oriented growth of bismuth oxybromide photocatalysts and belongs to the field of photocatalysis. The preparation method is mainly characterized in that bismuth salt, bromide, glacial acetic acid and polyvinylpyrrolidone (PVP) are taken as raw materials, the added amounts of glacial acetic acid and PVP are controlled, the bismuth oxybromide photocatalysts with different growth orientations are obtained by virtue of a simple hydrothermal method, and photocatalytic performance of the bismuth oxide bromide photocatalysts are compared. The preparation method is simple in technology and low in cost, and the prepared bismuth oxybromide photocatalysts with different growth orientations have different visible light catalytic activities.

The invention discloses a component nonuniformity numerical prediction method for magnesium alloy casting parts, and relates to a component nonuniformity numerical prediction method for magnesium alloy casting parts. The objective of the invention is to solve the problem that macrosegregation formation of the magnesium alloy casting parts cannot be accurately predicted by an existing method. The component nonuniformity numerical prediction method comprises the following steps: 1, simulating the growth of alpha-Mg dendrites with different growth orientations by adopting a cellular automaton method to obtain a curve that the specific surface area of the dendrites changes along with the solid phase fraction; 2, performing mesh generation on the casting system; 3, calculating an energy, component and momentum conservation equation for all grids with subscript char = 0, and obtaining distribution of temperature, average component and speed in the casting parts; 4, calculating an energy conservation equation for all grids of which the subscript chars are not 0 to obtain temperature distribution; and 5, repeating the step 2, the step 3 and the step 4 until solidification is finished, and outputting an average component field in the casting parts. The component nonuniformity numerical prediction method is applied to the field of magnesium alloy casting part component prediction.

The invention relates to a method for quantitatively analyzing measured body-centered cubic alloy solidification structure grain sizes, in particular to a method for quantitatively analyzing EBSD measured body-centered cubic alloy solidification structure grain sizes. The purpose is to solve the technical problem that because dendritic structures, not grain structures, are currently measured through EBSD, the grain sizes can not be evaluated. The method includes the steps that step1, EBSD data are obtained; step2, a two-dimensional array is established; step3, a rotation matrix and a growth orientation matrix are established; step4, primary-precipitated phase elements are endowed with attributes; step5, the dendritic structures are evolved as the grain structures; step6, the equivalent diameters of grains are calculated; step7, the average equivalent diameter of the grains in the gravity direction is calculated. The method not only can analyze the grain structures, but also can analyze the dendritic structures, the sizes and distribution characteristics of the grains can be evaluated, and mechanical performance is evaluated with the help of a grain size grade standard. The method is applied to the EBSD measured body-centered cubic alloy solidification structure grain sizes.

The invention discloses a liquid-phase preparation method of a high-oriented vanadium dioxide film, belonging to the field of chemical function materials. The preparation method comprises the following steps: preparing precursor liquid by taking triisopropoxyvanadium oxide as solute, coating a sapphire substrate with the obtained precursor liquid to prepare a precursor film, and finally sintering the precursor film in a vacuum environment. According to the preparation method, the vanadium dioxide film is prepared by controlling vacuum sintering conditions on the basis of a liquid-phase method, the obtained film is good in growth orientation, the phase change temperature of the film is about 60 DEG C, and the change of electrical resistivity before and after the phase change is more than three orders of magnitude; in addition, the preparation process is simple and suitable for large-range popularization.

The invention provides preparation of an electrode for electrochemical reduction of CO2, and an electrode and application thereof. The technology of combining hydrothermal reaction and electrochemicalreduction has advantages of simple operation and strong reproducibility, and is characterized in that a surfactant is introduced during the hydrothermal reaction. Through the surfactant for orientedadsorption of the base metal surface, growth orientation of the metallic oxide can be regulated and controlled to obtain a dominant crystal face having high selectivity to HCOOH. The prepared surfaceoxide layer is thin and dense, and can effectively hinder the participation of the base metal in an ERC reaction so as to control the efficient conversion of the electrochemical reduction of CO2 to atarget product.

The invention discloses a method for preparing a resistive random access memory. The method comprises the following steps of providing a substrate; depositing a first metal layer on the upper surfaceof the substrate; depositing a resistive functional layer on the upper surface of the first metal layer; depositing a material layer having a low mobility on the upper surface of the resistive functional layer; preparing one or more via holes on the material layer having the low mobility; and depositing a second metal layer on the upper surface of the material layer having the low mobility. According to the method for preparing a resistive random access memory provided by the invention, the resistive random access memory prepared can control the size of conductive filaments. Since the growth orientation, number and size of the conductive filaments can be controlled, the randomness of the growth of the conductive filaments can be reduced and the current fluctuation of the resistive random access memory can be reduced, thereby reducing the parameter fluctuation of the resistive random access memory and improving the reliability of the resistive random access memory.

The invention provides organic metal complex.The organic metal complex is prepared by mixing bis(2-methyl-8-oxyquinoline-N1, O8)-(1, 1'-biphenyl-4-hydroxyl)aluminum and 8-oxychinolin aluminum, wherein the weight ratio of the bis(2-methyl-8-oxyquinoline-N1, O8)-(1, 1'-biphenyl-4-hydroxyl)aluminum and 8-oxychinolin aluminum to the 8-oxychinolin aluminum is 2-5:5-8.Atmosphere generated during high-temperature decomposition can have embedding and co-growth of certain degree, so that the growth orientation of crystals can be changed, the atomic structure on the surface of microcosmic particles can be improved, and functional material crystal structure design is achieved.When aluminum oxide compound obtained from the organic metal complex is prepared into a coating membrane, the coating membrane is outstanding in water absorption performance, and the self-discharge performance, voltage drop performance and normal-temperature circulation performance of the coating membrane are evidently better than those of a common aluminum oxide coating membrane.The preparation method of the organic metal complex is simple, practical, evident in effect, and capable of satisfying the requirements of large-scale industrial production.