260 results about "Low mobility" patented technology

The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density. The present invention forms relatively low gain FinFET transistors in a low carrier mobility plane and relatively high gain FinFET transistors in a high carrier mobility plane. Thus formed, the FinFETs formed in the high mobility plane have a relatively higher gain than the FinFETs formed in the low mobility plane. The embodiments are of particular application to the design and fabrication of a Static Random Access Memory (SRAM) cell. In this application, the bodies of the n-type FinFETs used as transfer devices are formed along the {110} plane. The bodies of the n-type FinFETs and p-type FinFETs used as the storage latch are formed along the {100}. Thus formed, the transfer devices will have a gain approximately half that of the n-type storage latch devices, facilitating proper SRAM operation

A communication system optimizes system performance by selectively managing which mobile stations (MSs) are to serve as test MSs. The test MSs report system operating parameters in order to detect sleeping cells, coverage holes, or other flaws in system coverage or in order to determine an impact of a change in an access network configuration. The communication system further provides for end-to-end messaging between the test MSs and network servers via an access network and a core network, thereby permitting network elements that are best able to perform system optimization to control the monitoring, measuring, and reporting by the MSs. To minimize system and user inconvenience, reporting by a test MS further may be based on one or more of whether the MS is in an area of low mobility, has an acceptable power source output level, and is operating in a cell with an acceptable load level.

A station is disclosed that is configured for signal transmission in an Orthogonal Frequency Division Multiple Access (OFDMA) system. The station includes a processor configured to fix a subcarrier spacing to a predetermined value for one or more subframes in all available bandwidths. The station further includes a transmitter configured to transmit a signal having the fixed subcarrier spacing, regardless of a frame structure of the one or more subframes. According to certain embodiments, the predetermined value may be divided evenly by at least one channel raster. The predetermined value may be 12.5 KHz, according to certain embodiments. Alternatively, the predetermined value is 6.25 KHz for one or more low mobility mobile stations, and/or the predetermined value is 25 KHz for one or more high mobility mobile stations. The station may be a mobile station or a base station configured for uplink and downlink transmission.

In general, paging-related delays are reduced by empowering an idle mobile (120) to initiate a transition to semi-dormant, unslotted mode, and/or RSCI modes, based on triggers (304) known to the MS. This is an efficient manner (in terms of both RF and battery-life cost considerations) in which to use semi-dormant and RSCI modes (306). If the MS (120) is able to anticipate a paging channel (PCH) message (for example, after sending or receiving an SMS or presence update), then the MS can intelligently reduce its slot cycle index for a short period of time, sacrificing a small amount of battery life, when the R-SCI is most likely to deliver improved service. Moreover, if the MS is low mobility (i.e. low idle handoff rate), then the MS can transition to a semi-dormant mode with very little cost, since it will not need to send many radio environment reports.

The invention provides a display device (26) including a plurality of discrete display segments (2). Each display segment (2) is provided with a drive circuit for driving the display elements arranged within the display area. The display device may be provided either as a passive, active or direct pixel addressed array. By interconnecting a number of display segments, a large area display can be achieved without the requirement for long electrodes. This reduces the electrical resistance and parasitic capacitance of the addressing electrodes, enabling the display to provide improved luminance in a displayed image and to operate at higher speeds, providing improved resolution. An active matrix addressing scheme can also be implemented using relatively low mobility organic thin film transistors.

In a wireless communication system, a mobility factor is used to influence handoff. If a subscriber station has been in a low mobility state for some period of time, the system may handoff operation from a first service type to a second service type. If the mobility factor indicates that the subscriber station is moving, the system may handoff operation from the second service type back to the first service type.

An epoxy composition for applications such as one-part adhesives, coatings, prepreg and molding compounds that includes leuco dyes, particularly those comprising a N,N-dialkylamino-, N,N-diarylamino-, or cycloalkylamino-functional group on one of the aromatic rings, as a co-catalyst or co-curing agent. The use of the leuco dye co-catalyst provides improved curing speed of the epoxy composition comprising a latent curing agent/catalyst such as Novacure imidazole microcapsules while maintaining the shelf-life stability. The epoxy may also include a secondary co-catalyst that includes amides and lactams, particularly those comprising a N,N-dialkylamino-, N,N-diarylamino-, or dicycloalkylamino-functional group. Secondary cocatalysts of low mobility at the storage conditions, such as those with a long chain substitutent, dimeric or oligomeric amides or lactams, are particularly preferred. The improved epoxy composition is implemented as adhesives for manufacturing an anisotropic conductive film (ACF) and also for connecting, encapsulating, or packaging of electronic devices.

The invention discloses a user equipment (UE) access restriction method. The method comprises the following steps that: after receiving an access request of the UE, a network side carries position information of the UE when requesting policy and charging control (PCC) from a policy and charging rules function (PCRF); the PCRF determines whether the UE is in an allowable position area scope according to the position information of the UE and notifies the network side when the user equipment is not in an allowable position area scope; then the network side restricts the access of the UE. The invention also discloses a UE access restriction system for realizing the above method. In the invention, through carrying out access restriction management to the UE with a low mobility by a user plane network element, problems of mobility management and charging chaos caused by abnormal moving of the UE with the low mobility can be avoided. Simultaneously, the position information of the UE can be timely reported to a machine type communication (MTC) Server. And the MTC Server can timely process an abnormal mobile event of the UE.

The present invention defines an efficient measurement method for idle mode M2M/MTC device with low/no mobility in a mobile communication system. An example of the mobile communication system to which the present invention is application is 3GPP UMTS mobile communication system and 3GPP LTE/LTE-A mobile communication system as the next generation mobile communication system under discussion in 3GPP.

The invention provides a medical low-temperature resistant low-mobility polyvinyl chloride calendered film material and a preparation method thereof. The calendered film material comprises the following components in parts by weight: 40-90 parts of polyvinyl chloride, 60-10 parts of thermoplastic elastomer, 10-40 parts of plasticizer A, 0-20 parts of plasticizer B, 1-10 parts of heat stabilizer, 0.1-2.5 parts of antioxidant and 0.1-1.5 parts of lubricating agent. The calendered film provided by the invention has the characteristics of softness, firm patterns, good size stability, stable surface roughness and high oxygen permeability, has no particle pollution on the surface, can meet the requirements of storing blood for 42 days and storing the blood at a low temperature of -30 DEG C, provides a medical material capable of being stored for a long time for special conditions or war preparedness, does not need secondary processing, is simple and convenient in manufacture, and is a good substitute of the traditional blow molding film.

The invention discloses an EVA (Ethylene Vinyl-Acetate) glue film special for packaging a double glass solar assembly and a preparation method thereof. The EVA glue film special for packaging the double glass solar assembly comprises the following components in percentage by weight as follows: 70-90% of ethylene vinyl-acetate copolymer, 5-20% of ethylene-octylene copolymer, 2-10% of polyethylene, 0.1-1.0% of initiator, 0.1-1.5% of antioxygen, 0.1-1.0% of ultraviolet absorbent, 0.05-1.0% of light stabilizer and 0.5-1.5% of tackifier which are grafted and pretreated and then subjected to tape casting. The glue film provided by the invention has excellent an anti-impact modulus moisture separating effect and lower mobility, and is applied to packaging the double glass solar assembly to avoid deficiencies such as bubbles and displacement of the double glass assembly, so that the performance demand of falling ball impact of the double glass assembly is met. In addition, the preparation method provided by the invention is simple in process, efficient in production and low in energy consumption, and the assembly packaged is quick to cool and the product cost is lowered.

The present invention provides a metal-graphene plasmon device for enhancing infrared spectrum detection. The device comprises a substrate, a reflective layer, a dielectric layer, a graphene film, a source metal layer, a drain metal layer, a grating layer and a to-be-detected substance layer which are sequentially arranged from bottom to top, wherein the substrate and the reflective layer are taken as a grid, the reflective layer is deposited on the substrate, the dielectric layer is deposited on the reflective layer, the graphene film covers the dielectric layer, and the source metal layer and the drain metal layer are deposited on the graphene film and are connected through graphene; an alternating structure of a graphene periodic nanostructure and a gold grating is arranged in a local region between the source metal layer and the drain metal layer. Compared with other graphene infrared plasmon device structures with low mobility, the device can achieve perfect infrared absorption and greatly enhanced local electromagnetic field, and efficiency of infrared spectroscopy in trace substance detection is improved.

The invention discloses a fluorene polyfunctionality photoinitiator represented by the formula (I). The compound has the advantages of simple synthesis, low cost, and good solubility. The application effect in a photo cured composition is good. Compared with a conventional micromolecular photoinitiator, the photo initiation activity is excellent, and the provided photoinitiator also has the advantages of low mobility, low odor, and yellowing resistance.

An electroluminescent (EL) device, including a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure includes: a first higher mobility semiconductor layer having a first mobility; a second higher mobility semiconductor layer having a second mobility; and a lower mobility semiconductor layer formed between the first higher mobility semiconductor layer and the higher mobility second semiconductor layer. The lower mobility semiconductor layer has a third mobility that is less than the first mobility and the second mobility. The semiconductor structure includes EL semiconducting material in the first higher mobility semiconductor layer, the second higher mobility semiconductor layer, and/or the lower mobility semiconductor layer. The first electrode is coupled to the first higher mobility semiconductor layer of the semiconductor structure. The second electrode is coupled to the second higher mobility semiconductor layer of the semiconductor structure.

Disclosed herein is a structure with two different type tri-gate MOSFETs formed on the same substrate. Each MOSFET comprises a fin with optimal mobility for the particular type of MOSFET. Due to the processes used to form fins with different crystalline orientations on the same substrate, one of the MOSFETs has a fin with a lower mobility top surface. To inhibit inversion of the top surface, this MOSFET has a gate dielectric layer with a thicker region on the top surface than it does on the opposing sidewall surfaces. Additionally, several techniques for forming the thicker region of the gate dielectric layer are also disclosed.

The invention discloses a focusing device and a focusing method of a flat high-field asymmetric waveform ion mobility spectrometer. The flat high-field asymmetric waveform ion mobility spectrometer comprises an ion source, a mobility area and a detection unit, wherein an upper substrate and a lower substrate are placed in parallel in the mobility area; an upper mobility area electrode and a lower mobility area electrode are respectively arranged on the upper substrate and the lower substrate; and the upper mobility area electrode is connected with an asymmetric waveform radio frequency power supply and a direct current scanning compensation power supply. The focusing device is characterized in that at least one focusing area is arranged at the front end of the mobility area; and at least one focusing polar plate pair is arranged on each of the upper and lower substrates of each focusing area. The focusing method employing the focusing device is characterized in that voltage is applied to each focusing polar plate pair, so ions are gathered to the center before entering the mobility area; the applied voltage has two modes, namely a direct current focusing mode and a radio frequency focusing mode; in the direct current focusing mode, the same direct current voltage is applied to the focusing polar plate pair at intervals; and in the radio frequency focusing mode, sine radio frequency voltage is applied to each focusing polar plate pair, and the difference of the radio frequency voltage phases of the adjacent focusing polar plate pairs is 180 DEG.

A thioxanthone-2-carboxylate as an optical trigger in the form of liquid used in optical polymerizing process features low extraction performance, low mobility and low volatility, and ca be used for paint and ink. Its preparing process is also disclosed.

Provided are an organic electro-luminescent display (“OELD”) and a method of fabricating the OLED. The OELD includes an organic light emitting diode (“OLED”), a driving transistor driving the OLED, and a switching transistor controlling an operation of the driving transistor. The driving transistor includes an active layer having a crystal structure grown in a direction parallel to a current channel of the driving transistor, and the switching transistor includes an active layer having a crystal structure grown in a direction perpendicular to a current channel of the switching transistor. Accordingly, the requirements for the switching transistor and the driving transistor can be satisfied in designing the OELD. Therefore, it is possible to efficiently fabricate a low-mobility switching transistor and a high-mobility driving transistor.

Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.

The present invention discloses one kind of superbranched Si-base macromolecular photoinitiator and its preparation, and features that the superbranched Si-base macromolecular photoinitiator is prepared through the first Si-H addition reaction to prepare superbranched organosilicon polymer with excellent flowability, high solubility and excellent reaction performance, and the subsequent reaction of the organosilicon polymer and modified small molecular weight photoinitiator. The superbranched Si-base macromolecular photoinitiator can initiate the polymerization or cross-linking of compound containing acrylate or similar radical under the irradiation of ultraviolet ray. It is superior to small molecular weight photoinitiator, and has low mobility, low toxicity, high heat resistance and capacity of raising the heat resistance of the cured resin.

A negative resistance field-effect element that is a negative differential resistance field-effect element capable of achieving negative resistance at a low power supply voltage (low drain voltage) and also enabling securement of a high PVCR is formed on its InP substrate 11 having an asymmetrical V-groove whose surface on one side is a (100) plane and surface on the other side is a (011) plane with an InAlAs barrier layer (12) that has a trench (TR) one of whose opposed lateral faces is a (111) A plane and the other of which is a (331) B plane. An InGaAs quantum wire (13) that has a relatively narrow energy band gap is formed at the trench bottom surface as a high-mobility channel. An InAlAs modulation-doped layer (20) having a relatively wide energy band gap is formed on the quantum wire as a low-mobility channel. A source electrode (42) and a drain electrode (43) each in electrical continuity with the quantum wire (13) constituting the high-mobility channel through a contact layer (30) and extending in the longitudinal direction of the quantum wire (13) as spaced from each other, and a gate electrode (41) provided between the source electrode (42) and the drain electrode (43) to face the low-mobility channel (20) through an insulating layer or a Schottky junction, are provided. Owing to the foregoing configuration, a very narrow-width quantum wire whose lateral confinement size can, without restriction by the lithographic technology limit, be made 100 nm or less is usable as a high-mobility channel, whereby there can be obtained a negative resistance field-effect element that develops a negative characteristic at a low power supply voltage and enables securement of a high PVCR.