468 results about "Plasmon" patented technology

The invention discloses a multi-mode circularly polarized OAM (orbital angular momentum) filtering antenna based on an artificial surface plasmon. According to the antenna, the SSPP leaky-wave antenna and the HMSIPW filter are integrated, so that efficient emission of multi-mode OAM beams is realized, and the antenna has low axial ratio, high gain and good directional diagram matching performance; the SSPP leaky-wave antenna is composed of an Archimedes spiral line type SSPP waveguide and annularly distributed patches, wherein the SSPP waveguide realizes accurate regulation and control of dispersion characteristics through the combination of periodic sawtooth comb lines and uniform spiral lines; the HMSIPW filter is composed of a dielectric substrate layer, a metalized through hole and a gradient rectangular structure, impedance matching of a micro-strip and double lines is achieved, insertion loss is reduced, and radiation performance is improved. Compared with a traditional design, a filtering function is integrated, higher harmonic radiation and low-purity high-mode OAM are inhibited through the overall design, and selectivity and radiation energy uniformity are improved.

Various implementations, systems and methods are disclosed for continuous, near real-time, hands-off sampling of airborne particulate matter, and qualification and / or quantification of biomolecules in the sample representative for biologic or microbial contamination. The systems and methods may utilize an electrostatic precipitator for sampling the matter; and a measurement assembly configured to illuminate, excite, or breakdown the sampled matter by electromagnetic radiation, and to detect a spectrum, or one or more wavelength bands of the scatter emitted by the sample. In an exemplary implementation, a sputter deposition process is employed to configure the sample for an enhanced plasmon resonance. The measurement data may be transferred via wireless communication means for cloud storage and signal processing.

The invention discloses an infrared polarized photoelectric detector based on a plasmon metasurface and a preparation method thereof, and belongs to the technical field of photoelectric detection. According to the photoelectric detector, coupling resonance is achieved through the bottom metal nano array and the WSe2 / InSe heterojunction, heterojunction infrared light absorption is enhanced, photocarriers are generated, and finally the photocarriers are collected by the top electrode layer to form photocurrent, so that the infrared light detection capacity of the original WSe2 / InSe heterojunction is improved. And optical absorption enhancement at different infrared wavelengths can be realized by adjusting the period, the length and the width of the metal nano array. When 4V bias voltage is applied, compared with an original WSe2 / InSe heterojunction photoelectric detector, the photoelectric responsivity of the photoelectric detector is improved by one order of magnitude, and the detection rate is improved by two orders of magnitude. In the aspect of polarization detection, the anisotropy of the nano array is utilized, and polarization insensitivity is creatively improved to the polarization ratio of 5.2.

The invention relates to the technical field of plasmon nano photonics, and discloses a preparation method of a novel gradient metasurface, which comprises the following steps: pretreating an aluminum sheet; prefabricating a pattern on the aluminum sheet and performing anodic oxidation; the preparation method comprises the following steps: preparing an anodized aluminum oxide thin film, fixing the anodized aluminum oxide thin film on a glass sheet, placing the glass sheet fixed with the anodized aluminum oxide thin film in chambering liquid, and taking out the glass sheet to obtain the novel gradient metasurface. By adopting electrochemical and chemical corrosion methods, for gradient metasurfaces with different areas, different sizes and different directions, the diversity of adjustable parameters of the nano array can be enriched, the time is shortened, the cost is reduced, the manufacturing cost and time are reduced to a great extent, and the production efficiency is remarkably improved.

The invention provides an on-chip terahertz band-pass filter based on an artificial surface plasmon high-order mode, and the on-chip terahertz band-pass filter comprises a dielectric substrate, a feed microstrip line, a first transition structure, a short-branch artificial surface plasmon transmission region, a second transition structure, and a long-branch artificial surface plasmon transmission region. Feed microstrip lines are arranged at the two ends of the front face of the dielectric substrate respectively, each feed microstrip line is sequentially connected with a first transition structure, a short-branch artificial surface plasmon transmission area and a second transition structure, and a long-branch artificial surface plasmon transmission area is located in the middle of the front face of the dielectric substrate. Two ends of the long branch artificial surface plasmon transmission region are respectively connected with a second transition structure, and the whole back surface of the dielectric substrate is covered with a metal layer as a metal ground; the wide-stop-band microstrip antenna has the advantages of being wide in stop band, easy to machine, small in transmission loss and small in crosstalk, does not need punching operation, and is convenient to machine.

The invention discloses an SERS (Surface Enhanced Raman Scattering) substrate for solution in-situ rapid detection as well as preparation and application thereof, and belongs to the technical field of substance detection. Comprising a substrate, a nanorod array film growing on the substrate, and metal nanoparticles deposited on the outer side surfaces of nanorods. The sensor has the advantages of portability of a solid substrate, strong plasmon resonance absorption in a broadband visible light region, strong surface enhancement effect and the like, and trace substances and microorganisms in a solution can be rapidly detected through the surface enhancement Raman effect; when substances in a solution are tested, pretreatment such as mixing, adsorption and drying is not needed, the limitation that in-situ detection of a traditional surface enhanced Raman base in the solution cannot be achieved is broken through, pretreatment-free in-situ and second-level ultrafast detection can be achieved, operation is easy, cost is low, and sensitivity is high. The problems that an existing SERS substrate is poor in stability and repeatability, and in-situ, ultrafast, trace and portable detection of substances in a solution cannot be achieved are solved.

The invention discloses a mid-infrared light detector and a preparation method thereof, and belongs to the technical field of light detection.The light detector comprises a piezoelectric substrate, and a Van der Waals heterojunction, an input interdigital transducer and an output interdigital transducer are arranged on the piezoelectric substrate; the input interdigital transducer and the output interdigital transducer are symmetrically arranged on two sides of the Van der Waals heterojunction; the input interdigital transducer is used for generating a surface acoustic wave according to the alternating current signal; and the output interdigital transducer is used for receiving the surface acoustic wave signal passing through the Van der Waals heterojunction and outputting the signal. According to the device, a periodic strain field and a piezoelectric field are formed on the surface of a substrate through surface acoustic waves, graphene plasmons are excited, mid-infrared light absorption is enhanced, photo-generated electron-hole space separation is promoted, photo-generated carrier recombination is inhibited, a photoelectric response signal is converted into an acoustoelectric signal, and the photoelectric response signal is converted into an acousto-electric signal. And high-performance mid-infrared light detection is realized by using the high-sensitivity response characteristic of the surface acoustic wave device to acoustoelectric interaction.

The invention discloses an adjustable non-reciprocal wave absorber based on a graphene-Weel semimetal plasmon structure, and relates to the field of nano photonics, and the wave absorber comprises a graphene film with a certain thickness; the polymer dielectric layer is laid at the lower part of the graphene film; the germanium grating layer is arranged at the lower part of the polymer dielectric layer; the Weel semimetal layer is arranged at the lower part of the germanium grating layer; the zinc selenide dielectric layer is arranged at the lower part of the Weel semimetal layer; and the silver substrate is arranged at the bottom of the Weel semimetal layer. According to the adjustable non-reciprocal wave absorber, dynamic regulation and control of the non-reciprocal absorption coefficient can be improved by properly adjusting the Fermi level and the incident light angle of the graphene, then switching between the non-reciprocal state and the reciprocal state of a device is achieved, and the effect of enhancing the practicability of the non-reciprocal device is achieved.

The invention discloses an AuAgPt ternary alloy nano-framework, a preparation method thereof and application of the AuAgPt ternary alloy nano-framework in anti-tumor preparations, and belongs to the field of biomedical nano-materials. The AuAgPt ternary alloy nano frame is a hollow octahedral nano frame formed by 12 AuAgPt ternary alloy edges, and the nano frame has plasmon photothermal conversion performance, catalase activity and peroxidase-like activity, and can be used for preparing the nano frame. The aptamer has the characteristics that the aptamer can form a covalent bond with glutathione (GSH), the aptamer with the framework surface capable of being modified and specifically bound with tumor cells is used for tumor targeted delivery and the like, the aptamer can be bound in a targeted manner and internalized into the tumor cells, and after near-infrared laser irradiation, the cell temperature can be increased to 42 DEG C, reactive oxygen species (ROS) can be generated, GSH can be consumed, and the tumor targeting effect is achieved. In addition, the content change of small molecule metabolites in cells can be driven through a low-temperature photothermal effect, the metabolic state is disturbed, the redox balance in the cells is destroyed, the tumor cells are induced to generate ferroptosis and apoptosis, and the low-temperature photothermal treatment of tumors is realized.

This invention discloses an enhanced lead-salt uncooled mid-wave infrared detector and its fabrication method, relating to the field of photoelectric detection technology. The detector comprises: a substrate, a reflective layer, a dielectric layer, a microstructure array layer, a lead-salt sensitive layer, a metal electrode layer, and a passivation layer. The fabrication method includes: fabricating a metal reflective layer on the substrate surface; fabricating a resonant cavity layer on the reflective layer; fabricating a microstructure array layer on the resonant cavity layer; fabricating a lead-salt sensitive layer on the microstructure array layer; sensitizing the lead-salt sensitive layer; fabricating a metal electrode on the lead-salt sensitive layer; and fabricating a passivation layer on the lead-salt sensitive layer and the metal electrode. The beneficial effect of this invention is that it combines the LSPR effect of the resonant cavity and the artificial plasmon resonance array (i.e., the metal microstructure array), which can effectively enhance the mid-wave infrared radiation absorption of the device. It has the characteristics of high performance, high sensitivity, and high stability, and is expected to be widely used in the field of mid-wave infrared detection.

The invention discloses a silicon substrate-chalcogenide glass-plasmon hybrid integrated waveguide structure and a preparation method thereof, and belongs to the technical field of integrated optics, the silicon substrate-chalcogenide glass-plasmon hybrid integrated waveguide structure comprises an SOI substrate, a dielectric layer is arranged on top silicon of the SOI substrate, metal and chalcogenide glass are arranged on the dielectric layer, a plasmon slit waveguide structure is formed between the metal, and the chalcogenide glass is arranged between the metal and the plasmon slit waveguide structure. The end parts of the metal slit are respectively connected with the end parts of different chalcogenide glass, and extend outwards along the extension line of the slit to form a chalcogenide glass-metal slit-chalcogenide glass structure. Silicon-based-chalcogenide-plasmon waveguides are combined, the tolerance of an overlay process is increased in an interlayer mode conversion mode, the transmission loss of the plasmon waveguides is improved in a silicon-based-plasmon mixed waveguide mode, the robustness of the device is improved, and the device functions of low loss and high mode conversion efficiency are achieved. And the application of the plasmon integrated optical waveguide device in hybrid integrated optoelectronic devices and nonlinear optical regulation and control is promoted.

Methods of producing an optical surface atop an exterior of a substrate that includes smoothing the exterior using an ALD process to sequentially deposit ALD layers to produce one or more ALD films that fill spaces between spaced-apart asperities existing on the exterior, and thereafter depositing a reflective material on the smoothed exterior of the substrate to produce the optical surface. The smoothing resulting from depositing the ALD film on the exterior of the substrate causes the grain size of the reflective material to be reduced in comparison to the grain size that would exists without having deposited the ALD film on the exterior of the substrate. The smoothing is sufficient to cause a reduction in grain size that results in a reduction in plasmon absorption in the optical surface in comparison to the plasmon absorption that would otherwise exist without having reduced the grain size of the reflective material.

This invention proposes a tapered fiber optic hydrogen sensor and its fabrication method, belonging to the field of hydrogen sensors. The sensor includes a tapered section in the middle of an optical fiber; a sensing element tightly fitted around the tapered section; a light source inputting an optical signal into the optical fiber; a spectrometer measuring the position of characteristic peaks in the optical fiber's spectrum; and a three-layer thin-film structure comprising the sensing element from the inside out: an excitation layer that excites the optical fiber surface to generate a plasmon resonance effect; a reaction layer made of a gas-sensitive material that reacts with hydrogen; and a catalytic layer that catalyzes the reaction between the gas-sensitive material and hydrogen. This invention employs a tapering method to fabricate the fiber optic sensor, significantly improving its sensitivity. Using tungsten oxide and gold co-sputtering material as the gas-sensitive material greatly improves the response and recovery times compared to using only tungsten oxide.

The invention discloses a polarization sensitive type broadband absorber based on metal-medium stacking, and relates to the technical field of micro-nano photonic devices and infrared detection. The absorber sequentially comprises a bottom-layer high-loss metal reflecting layer, a multi-layer stacked composite dielectric cavity structure and a top-layer sub-wavelength metal grating from bottom to top, according to impedance matching and interference resonance theories, a broadband absorption substrate is constructed through a multi-layer film structure at the bottom, and light energy is converted into heat energy by utilizing the high loss characteristic of bottom layer metal; plasmon resonance is excited through the top metal grating, the coupling efficiency of TM polarized light is enhanced, and TE polarized light is cut off; the above structural design successfully realizes efficient broadband absorption and high polarization extinction ratio in an infrared band. The structure is simple in design, is compatible with a CMOS technology, and has excellent wide-angle stability. And meanwhile, polarization screening can be realized without an external polaroid, and miniaturization and integration of an infrared detection system are facilitated.

The invention relates to the field of nano photonics and optical materials, in particular to an exciton state energy level detection method based on a plasmon enhanced nonlinear spectrum, which comprises the following steps: constructing a mixed nano cavity structure in which a single-layer two-dimensional material is coupled with a plasmon cavity; collecting a two-photon photoluminescence spectrum, a second harmonic spectrum and a third harmonic spectrum of the single-layer two-dimensional material in the mixed nanocavity structure; the intensity of a nonlinear optical signal is improved through a local enhancement effect of plasmons; according to the two-photon photoluminescence spectrum, the second harmonic spectrum and the third harmonic spectrum of the single-layer two-dimensional material, the dark exciton state energy level, the bright state energy level, the dark exciton state energy level and the high-energy exciton state energy level of the single-layer two-dimensional material are determined. According to the method, the energy level of the Rydberg exciton state of the semiconductor material with the nanoscale thickness can be accurately detected.

The invention discloses an artificial surface plasmon microstrip transmission line with a crosstalk suppression effect. The transmission line conduction band is provided with a periodic internal notch groove structure which is used for transmitting microwave artificial surface plasmons with strong local field constraint performance. The periodic notch grooves can be S-shaped, spiral, T-shaped, cross-shaped, KoCh-shaped, Moore Curve-shaped and other forms and are distributed in the microstrip conduction band, and the width of the conduction band is not increased, so that the remarkable inhibition effect that the far-end crosstalk is lower than-30dB is realized on the premise that the size of the microstrip line is not changed. The microstrip transmission line has the low-pass characteristic, the frequency response falling edge is steep, the cut-off frequency can be flexibly adjusted by adjusting the notch groove width and the number of iterations, and application requirements of different frequency bands can be met by scaling. The structure is simple, the size is compact, inter-line crosstalk can be effectively suppressed, the signal transmission quality is improved, the strict signal integrity requirement is met, and the high-frequency and high-speed signal transmission and functional devices are widely applied, and the wide application prospect is achieved.

According to the tantalum-nickel-selenium intermediate infrared detector based on microstructure regulation and control, a silicon dioxide layer is arranged on an intrinsic high-resistance silicon substrate, a plasmon microstructure and a grating structure are arranged on the silicon dioxide layer, and the grating structure and the plasmon microstructure are arranged at an interval. The plasmon microstructure and the grating structure are covered with a tantalum-nickel-selenium nanosheet, and the tantalum-nickel-selenium nanosheet is covered with a hexagonal boron nitride nanosheet protective layer. According to the invention, energy band alignment of tantalum-nickel-selenium and gold is utilized, and a synergistic effect of mid-infrared absorption enhancement and asymmetric temperature distribution of a microstructure area is realized with a plasmon microstructure and a grating microstructure in the microstructure, so that efficient mid-infrared self-driven detection, high response speed, high efficiency and high-performance infrared detection are realized.

The invention discloses a vertical plasmon waveguide device structure capable of being coupled by an optical fiber and a preparation method of the vertical plasmon waveguide device structure, and belongs to the technical field of integrated optoelectronics, and the structure is composed of a pair of metal gratings and a vertical metal-medium-metal plasmon waveguide. The structure comprises a silicon substrate layer, a lower metal layer, a dielectric layer and an upper metal layer which are arranged from bottom to top and is divided into a grating area and a waveguide area, the grating area comprises a dielectric grating area and a metal grating layer, and the waveguide structure comprises the lower metal layer, the dielectric layer and the upper metal layer. According to the design of the invention, the limitation of mass production caused by an overlay process of a mode converter between heterogeneous integrated waveguides is avoided, and the preparation robustness of the device is improved. The optical insertion loss caused by the roughness of the side wall of the waveguide is improved in a metal deposition-dielectric spin coating-metal deposition mode, and the dielectric layer can be replaced to realize multiple device functions.

The invention discloses a cell wide-spectrum detection method based on a terahertz artificial surface plasmon transmission line, and belongs to the field of cell wide-spectrum detection.The cell wide-spectrum detection method comprises the steps that the structure and size of the terahertz SSPP transmission line are designed, and a detection cavity packaged with the terahertz SSPP transmission line is prepared; connecting the detection chamber with a terahertz test platform, enabling the to-be-detected blood sample to flow into the detection chamber, and starting the test platform; the method comprises the following steps: irradiating an incident terahertz wave beam to the upper surface of a transmission line by using a high-resolution and large-dynamic terahertz frequency domain scanning test technology, efficiently coupling an incident terahertz free space wave with the transmission line, and exciting an SSPP wave with a high local characteristic on the surface of the transmission line; phase, amplitude and cut-off frequency data of an SSPP wave transmission spectrum are obtained, terahertz spectrum characteristics of cells are analyzed, and non-contact, unmarked and high-sensitivity detection and qualitative recognition of cell wide-spectrum information are achieved.

The invention provides an optical PUF (Physical Unclonable Function) chip based on a plasmon random structure, a reading system and a coding capacity evaluation method, the optical PUF chip comprises a substrate, a plurality of nano structures which are densely arranged and are obtained by adopting a porous nano film as a deposition auxiliary template for evaporation on the substrate, on the basis of randomness and local defects of a template and different gradients of angle deposition, the nanostructure has random differences in size, size and distribution, and shows different plasmon resonance effects; the nanostructure comprises a dense particle structure with statistical differences determined by the template aperture and a cluster island structure determined by random defects in the template. According to the invention, the speed of mass production of the plasmon chip can be obviously accelerated, the plasmon chip can be integrated with equipment such as a personal smart phone for use, additional equipment is not needed, the coding capacity, the safety and the stability can be improved in a simple and direct mode, and the requirements of different fields on the tag coding capacity and information verification can be met.

The present disclosure relates to the technical field of communications, and provides a leaky-wave antenna and an antenna system. The leaky-wave antenna comprises: a first dielectric substrate, a first metal layer, a dielectric functional layer, a second metal layer, and a second dielectric substrate. The first metal layer comprises a first transmission line and first radiation units; multiple first notches distributed at intervals are provided on a side edge, parallel to a length direction, on a first plasmon section of the first transmission line; and the multiple first radiation units and the first notches are located on the same side of the first transmission line. In the embodiments of the present disclosure, on the basis of the first plasmon section comprised in the first transmission line, the confinement capability of electromagnetic signals can be enhanced, and the radiation of the electromagnetic signals can be reduced, thereby ensuring the transmission efficiency of the electromagnetic signals, and achieving compact design of leaky-wave antennas. In addition, by radiating antenna signals outward from the first radiation units, high gain of the antenna signals can be ensured while maintaining high transmission efficiency in the first transmission line.

The invention discloses a preparation method of a full-spectrum response plasmon photocatalyst for reducing carbon dioxide to prepare methane, and belongs to the technical field of photocatalytic reduction of CO2. Tungsten hexacarbonyl and silver nitrate, nickel chloride or chloroauric acid are used as raw materials, and a solvothermal reaction is performed to obtain a plasmon W18O49 nanowire photocatalyst doped with different metal ions. According to the preparation method for preparing the CH4 plasmon photocatalyst through full-spectrum response CO2 reduction, the prepared Au, Ag or N metal ion doped plasmon W18O49 nanowires have high ultraviolet-visible-near infrared light absorption capacity and rich surface oxygen vacancy concentration, adsorption and activation of CO2 molecules are facilitated, meanwhile, the surface oxygen vacancy concentration is increased, and meanwhile, the surface oxygen vacancy concentration is increased. The surface of the catalyst can effectively stabilize a * CO intermediate generated in the photocatalytic CO2 reduction process, and the performance and selectivity of the original plasmon W18O49 for preparing CH4 through photocatalytic CO2 reduction are remarkably improved.

The invention discloses a plasmon metasurface chip biological image detection system integrated with digital microfluidics, and belongs to the field of microfluidics and metasurface biological image sensing. Comprising a digital micro-fluidic chip which is provided with a driving electrode array, a dielectric layer and a hydrophobic layer and is used for constructing a liquid path and controlling liquid drops; the plasmon metasurface chip is combined with the digital micro-fluidic chip to form a detection site, and biomolecules are detected by utilizing a plasmon resonance effect; the light source is used for exciting plasmon resonance; the CMOS image sensor is used for capturing an image at the detection site; and the control circuit is used for controlling the electrode of the digital micro-fluidic chip and realizing the construction of a liquid path and the control of liquid drops. A biomolecule solution to be detected can be accurately guided to a detection site of the plasmon metasurface chip, plasmon resonance is excited by using a light source, and an image is captured through the CMOS image sensor. And analyzing the image intensity change through image processing software to obtain a detection result of the biomolecules.

The application relates to a photothermal synergic phase change composite film based on a gradient type carbon-based heterostructure and a preparation method thereof. 2 The core innovation comprises the following points: 1) the electronic tunneling effect between the hybrid orbitals and the metal d orbitals excites local plasmon resonance, and the photothermal conversion efficiency is improved; 2) the phonon confinement effect of the hierarchical carbon-based topological skeleton suppresses the heat relaxation energy loss; and 3) the micro-nano porous structure is used to regulate the dynamics of the core material, and the controllable release of thermal energy in a wide temperature range is realized. The material and a high polymer binder are compounded and calendered through an interpenetrating network to form a flexible functional film, the preparation process is simple, the material exhibits the synergic performance of efficient thermal energy storage and release in the fields of wearable devices, battery thermal control and building energy saving, and the problems of low photothermal conversion efficiency, large heat loss and poor temperature range adaptability of traditional phase change materials are solved.

An organic light emitting device comprises a first electrode, an organic emissive layer positioned over the first electrode, a charge transport layer positioned over the organic emissive layer, and a second electrode comprising a metal, positioned over the charge transport layer, wherein the charge transport layer and the second electrode are configured to form plasmon exciton polaritons between the second electrode and the charge transport layer, wherein the charge transport layer has large singlet extinction coefficients and oscillator strengths, and an absorption onset wavelength smaller than emission wavelength.

The invention discloses a preparation method of a double-nonmetal plasmon multifunctional interference material, and relates to the technical field of smoke screen interference materials. The double nonmetal plasmon multifunctional interference material is MXene / TiN; according to the method, MXene / TiN is obtained by compounding MXene nanosheets and TiN nanoparticles through an ultrasonic-assisted method; the molar ratio of the MXene nanosheets to the TiN nanoparticles is 1: (0.1-9). According to the invention, TiN nanoparticles are combined with ultrathin MXene nanosheets through chemical bonds to obtain the dual-nonmetal plasmon material MXene / TiN, strong coupling between two nonmetal semiconductors with plasmon resonance effect is utilized, so that the dual-nonmetal plasmon material has good light absorption from visible light to near-infrared region, and the performance of the dual-nonmetal plasmon material is improved. The wave-absorbing material shows excellent wave-absorbing performance in an electromagnetic wave frequency band and has an efficient synergistic photo-thermal conversion effect.

A light emitting diode (LED) display and method of forming the display are disclosed. The display includes microLED pixels disposed on the backplane interspersed with photodetector pixels. Each photodetector pixel contains a metasurface that uses a grating to accept a narrow angular range of light, insulating spacers, and a conductive waveguide layer disposed between the insulating spacers. The insulating spacers have a refractive index to permit coupling to the waveguide layer, which supports surface plasmons and acts as a waveguide for in-plane light. The insulating spacers or another layer is formed from a material whose refractive index changes with at least one of an applied electrical or thermal stimulus to control a direction of a center angle of the narrow angular range.

The present invention provides a light-emitting device and a display device, belonging to the field of display technology. The light-emitting device of the present invention comprises a substrate, a first electrode, a functional layer, and a second electrode arranged on the substrate in sequence; the functional layer at least comprises a light-emitting layer; a dielectric layer is arranged between at least one of the first electrode and the second electrode and the functional layer, and metal nanoparticles are arranged in the dielectric layer; the local plasma resonance frequency of the metal nanoparticles matches the light-emitting wavelength of the light-emitting layer; the material of the dielectric layer adopts a polymer containing polyoxymethylene.

The present invention provides an artificial surface plasmon high-aperture efficiency end-fire antenna, which includes a dielectric substrate. The upper and lower surfaces of the dielectric substrate respectively form a dielectric substrate top layer and a dielectric substrate bottom layer. The dielectric substrate bottom layer is provided with a grounding metal layer, and the dielectric substrate top layer is provided with a top surface metal layer. The top surface metal layer is provided with a balun structure, a tapered parallel two-wire line, a transitional parallel two-wire line, and artificial surface plasmon radiation strips. One end of the balun structure is a feeding port, and the other end of the balun structure is connected to the end of the transitional parallel two-wire line through a connecting tapered parallel two-wire line. The other end of the transitional parallel two-wire line is connected to a pair of artificial surface plasmon radiation strips. This artificial surface plasmon high-aperture efficiency end-fire antenna has the advantages of high aperture efficiency, low profile, wide operating bandwidth, high directivity, high gain, and relatively small overall size.

The invention discloses a photoconductive antenna for reducing a space charge shielding effect, relates to a terahertz transmission technology, and provides a scheme for solving the problems of overhigh shielding voltage and the like in the prior art. The structure comprises a photoconductive substrate, a first electrode arranged on one side of the upper end face of the photoconductive substrate, and a second electrode arranged on the other side of the upper end face of the photoconductive substrate. A gap nano metal array is arranged between the first electrode and the second electrode; the gap nano metal array comprises unit cells which are distributed in an array; the metal sheets in the unit unit cells and / or between the unit unit cells excite local plasmon polaritons to enhance the light field intensity of corresponding areas when irradiated by incident laser. The terahertz photoconductive antenna has the advantages that the nanometer array structure is introduced, a high radiation enhancement area is generated through metal plasmon coupling, the terahertz photoconductive antenna obtains better radiation characteristics, meanwhile, the nanometer array structure is structurally optimized, the distribution condition of carriers in the photoconductive antenna is improved, and space charge shielding voltage is effectively reduced.