34 results about "Semimetal" patented technology

The invention discloses a novel high-energy secondary aluminium cell and a preparation method. The aim is to provide a method for preparing nano material-coated negative electrode active materials, by coating the negative electrode active materials with the nano materials, it is possible to subject the negative electrode active materials to nano treatment; therefore, the high-energy secondary aluminium cell features obviously improved properties, simple material composition, low cost, simple technology, environmentally friendly synthesis path, relatively high charge-discharge capacity and relatively good cycle property and market prospect. The aluminium cell comprises the positive and negative electrodes in the modified positive and negative electrode active materials coated by the nano material surfaces or any one electrode in the singly coated positive or negative electrode active materials, polyelectrolyte (ionic liquid) and a diaphragm. The coating materials are semimetals, oxides, salts or conductive polymers. The invention uses the nano materials in the secondary aluminium cell for the first time; therefore, the cell has higher open circuit voltage and reversible capacity and better cycle property, can be applied to such fields as portable power sources like mobile telephones, notebooks and portable electronic components, and as electric vehicles, hybrid electric vehicles and the like, and has broad application and development prospects.

The invention discloses an electrochemical deposition method which is used for eliminating semimetal antimony ions from waste water. By adopting a three-electrode or two-electrode system and using a titanium mesh as working electrode, semimetal antimony ions in the solution are precipitated in the form of semimetals or the oxide thereof in the working electrode by constant current electrochemical reduction deposition, so as to effectively eliminate the toxic antimony ions from the waste water with weak acid and low content, etc.; meanwhile, the electrodeposition of trivalent, quintavalent and total antimony can be realized through the adjustment of the acidity of mediums. The titanium which is inert to the reduction of hydrogen ion is adopted as the electrode material, thus improving the effective utilization of the electrode; meanwhile the abundant electrons in the titanium electrode which is a green chemical reagent leading the semimetal antimony ions in the solution to be precipitated after being reduced to solid by one-step method is utilized, therefore the treatment technology without second pollution is clean and has good environmental protection property. Furthermore, the invention has the advantages of simple technology, short process and high efficiency.

The invention relates to a graphene-metal or semimetal shell-core structure composite material and a preparation method thereof. The method comprises the steps that obtained modified graphene oxide is taken as a base to be concentrated and dried by evaporation, and then organic solvent displacement is conducted to obtain an organic solution of the modified graphene oxide; the surface of metal or semimetal is coated with the modified graphene oxide through a liquid-phase self-assembly method to form a graphene-metal or semimetal coating solution; after filtering and drying are conducted, the graphene-metal or semimetal shell-core composite material is obtained. According to the method, a conventional organic matter and inorganic matter coating process is improved, the influences of the water solvent and high temperature on the activity of some metals and semimetals with the high reaction activity are reduced, process realization of a coating method is expanded, and application barriers of the graphene and the active metal or semimetal in an energy-containing material are solved.

[Problem] To prepare an amorphous alloy as an authentic industrial-use material with a wide range of applications by solving various problems such as delayed fracture and ductility.

[Solution] The alloy includes 63 at % or more of Ni and consists only of, as a semimetal for amorphization, other than P. The semimetal may include, for example, 10 to 25 at % of B and one or more of Cr, Mo, and Nb as remaining main elements.

Provided is a method which consists of the formation of a layer over a stone substrate to increase its hardness, chemical resistance, wear and scratch resistance, comprising applying on the substrate a coating matrix incorporating an organic material and fillers including inorganic nanoparticles and/or microparticles; chemically binding said matrix to the substrate,by a self-assembly process and/or a binding process by covalent bonding, electrostatic bonding, van der Waals bonding or hydrogen bonds; and finally drying said matrix. The mentioned organic material is selected from organosilanes, organophosphates, polycarboxylic compounds, compounds based on triazine heterocycles and said nanoparticles are nanoparticles of oxides, carbides, borides, nitrides of metals or of semimetals.

The present invention includes an electrochemical redox active material. The electrochemical redox active material includes a cocrystalline metallic compound having a general formula A_xMO_4-yXO_y.M′O, where A is at least one metallic element selected from a group consisting of alkali metals, M and M′ may be identical or different and independently of one another at least one selected from a group consisting of transition metals and semimetals, X is P or As, 0.9≦x≦1.1, and 0<y<4.

A method for producing a transparent gas barrier film of the present invention is performed using a roll-to-roll method. The method includes depositing a plurality of layers on a long belt-shaped resin substrate 8 by alternately passing the long belt-shaped resin substrate 8 through a deposition area in which a material containing at least one of metals and semimetals is deposited by generating a plasma and a non-deposition area in which the material is not deposited, wherein a transparent gas barrier layer including the plurality of layers each continuously changing in density in the thickness direction is formed on the resin substrate 8 by changing a distance between the resin substrate 8 and a plasma source 52 in the deposition area.

The invention discloses a ferrimagnetism semimetal. The chemical formula of the ferrimagnetism semimetal is NaCu3Fe2Os2O12, the space group is Pn-3, the lattice constant is as shown in the specification, and the Curie temperature is 380 K. The ferrimagnetism semimetal is a high-temperature ferrimagnetism semimetal. The invention further discloses a preparation method for the ferrimagnetism semimetal. The preparation method comprises the following steps: (1) grinding and mixing NaOH, Fe2O3, CuO, Os and an oxygen source, to obtain a mixture; (2) filling the mixture in a gold or platinum capsule, sealing; (3) processing the gold or platinum capsule in 6-10 GPa of the pressure and 1000-1200 DEG C of the temperature; and (4) cooling a reaction product obtained in the step (3) to be the room temperature, releasing the pressure, and taking out from the gold or platinum capsule, grinding and washing, to obtain the ferrimagnetism semimetal NaCu3Fe2Os2O12. The ferrimagnetism semimetal NaCu3Fe2Os2O12 has the high Curie temperature, and has the potential application value in a future spinning electron device.

A thermoelectric metamaterial is provided, comprising a plurality of component materials selected from the group consisting of dielectrics, semiconductors, semimetals, and metals. The component materials are placed into contact with one another and arranged in a selected geometrical configuration adapted to achieve a thermal conductivity of the metamaterial that is different from the thermal conductivity of each of the component materials. Specifically, the component materials are arranged to affect an increase in the figure of merit and power conversion efficiency of the metamaterial. The thermoelectrical properties of the metamaterial may be adjusted to suit a desired application by changing one or more attributes, including: (a) one of the component materials, (b) the geometric configuration of the component materials, (c) the volume of one or more of the component materials, (d) the absence of a component material at a selected location within the metamaterial, and (e) the manner of contact between the component materials.

The present invnetion relates to a biological medicine preparation for relieving heavy metal poisoning. It is a heavy metal antidote using human metallothionein-L (MTL) as main component. The MTL contains the polypeptide of amino acid sequence described by SEQ IP NO2, its nucleotide code sequence and the nucleotide sequence described by SEQ ID NO1 have at least 70% of homology. It can relieve heavy metal and semimetals poisoning, in the course of development it can regulate internal balance of zinc and copper, and make metallic metabolism and detoxification, and can eliminate free radical. There, this invention can be used as auxiliary medicine preparation for curing tumor, and also relates to its production method and application.

The invention relates to Dirac semimetals, methods for modulating charge carrying density and/or band gap in a Dirac semimetal, devices including a Dirac semimetal layer, and methods for forming a Dirac semimetal layer on a substrate.

The present invention relates to a novel electroactive material which comprises a graphitic carbon phase C and a (semi)metal phase and/or a (semimetal) oxide phase (MO_x phase) and also to the use of the electroactive material in anodes for lithium ion cells. The invention further relates to a process for producing such materials. The electroactive material comprises:

• a) a carbon phase C;
• b) at least one MO_x phase, where M is a metal or semimetal, x is from 0 to <k/2, where k is the maximum valence of the metal or semimetal.

In the electroactive material of the invention, the carbon phase C and the MO_x phase form essentially co-continuous phase domains, with the average distance between two neighboring domains of identical phases being not more than 10 nm, in particular not more than 5 nm and especially not more than 2 nm.

The invention discloses a carbon nanotube three-dimensional fin transistor and a preparation method thereof. The carbon nanotube three-dimensional fin transistor is a transistor structure based on anembedded gate fin with Dirac two-dimensional semimetal as source and drain electrodes. The short channel effect of the carbon nanotube three-dimensional fin transistor can be reduced while the fin transistor has a small size, since the Dirac two-dimensional semimetal has a two-dimensional ultra-thin structure, the electrostatic shielding effect of the source and drain electrodes for a gate electrode in the gate structure can be reduced when the Dirac two-dimensional semimetal is used as source and drain electrode materials of the carbon nanotube three-dimensional fin transistor, and therefore,the short channel effect of the carbon nanotube three-dimensional fin transistor can be reduced. In addition, according to the carbon nanotube three-dimensional fin transistor, the potential distribution in a channel can be affected by applying a voltage to an embedded metal gate fin, therefore, the discrete regulation of a device threshold can be achieved, and the function of dynamically controlling the threshold of the device is achieved.

The invention discloses a composite material, a quantum dot light-emitting diode and a preparation method of the quantum dot light-emitting diode. The composite material comprises metal oxide nanoparticles and MN4 type semimetal, the metal oxide nanoparticles and the MN4 type semimetal are combined, and M in the MN4 type semimetal is a metal atom with the outermost layer being a 3d electron orbit. After the MN4 type semimetal and the metal oxide nanoparticles are compounded, the metal oxide nanoparticles can be uniformly dispersed by utilizing the characteristic that surface metal atoms in the semimetal are easily coordinated with hydroxyl ligands on the surfaces of the metal oxide nanoparticles. The MN4 type semimetal has high conductivity, and the conductivity of the MN4 type semimetal can be improved by compounding the MN4 type semimetal with the metal oxide nanoparticles. The band gap of the MN4 type semimetal is relatively small, so that electrons of the composite material combined with the metal oxide nanoparticles are more easily excited from a valence band to a conduction band, the carrier concentration is increased, carrier transmission is facilitated, and the luminous efficiency of the device is improved.

The invention discloses a composite material, a quantum dot light-emitting diode and a preparation method of the quantum dot light-emitting diode. The composite material comprises quantum dots and MN4 type semimetal, the quantum dots are combined with the MN4 type semimetal, and M in the MN4 type semimetal is a metal atom with the outermost layer being a 3d electron orbit. In the invention, as the MN4 type semimetal has high carrier mobility, the carrier transport performance of the quantum dots can be improved by combining the MN4 type semimetal with the quantum dots, electrons and holes are promoted to be effectively compounded on the quantum dots, and the luminous efficiency of the device is improved; meanwhile, the influence of exciton accumulation on the performance of the device can be reduced, and the stability of the device is improved.