Al alloy film, electron device and active matrix substrate for photoelectricity display device

一种光电显示、有源矩阵的技术，应用在电固体器件、电气元件、半导体器件等方向，能够解决生产能力下降、增加成膜步骤或刻蚀加工的步骤等问题，达到防止界面扩散的效果

Inactive Publication Date: 2009-03-25
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the increase in film formation steps or etching processing steps reduces productivity

Method used

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  • Al alloy film, electron device and active matrix substrate for photoelectricity display device
  • Al alloy film, electron device and active matrix substrate for photoelectricity display device
  • Al alloy film, electron device and active matrix substrate for photoelectricity display device

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Embodiment approach 1

[0051] refer to Figure 9 and FIG. 10 illustrate the structure of an electronic device to which the Al alloy film according to Embodiment 1 of the present invention is applied. Here, as an electronic device to which the Al alloy film of the present invention is applied, a TFT active matrix substrate for a liquid crystal display device using liquid crystal as a display element will be described in detail as an example. Figure 9 is a diagram showing the planar structure of the TFT active matrix substrate of the present embodiment, and FIG. 10 shows Figure 9 A diagram of the cross-sectional structure of each part.

[0052] Such as Figure 9 , as shown in FIG. 10, the TFT active matrix substrate of this embodiment includes a transparent insulating substrate 1, a gate (gate) electrode 2, a gate wiring 3, a gate terminal portion 4, an auxiliary capacitor electrode 5, a gate insulating Film 6, Si semiconductor film 7, Si film 8 with low ohmic resistance, source electrode 9, drai...

Embodiment approach 2

[0063] refer to Figure 11 12 illustrates the structure of an electronic device using the Al alloy film according to Embodiment 2 of the present invention. Figure 11 is a diagram showing the planar structure of the TFT active matrix substrate of the present embodiment, and FIG. 12 shows Figure 11 A diagram of the cross-sectional structure of each part. Embodiment 1 is for a full transmissive display that transmits all light and displays, but the TFT active matrix substrate of this embodiment is different in that a part of the drain electrode 10 also serves as a reflected light and The other configurations of the reflective pixel electrodes 21 for the transflective or partially reflective display are substantially the same as those of the first embodiment described above. exist Figure 11 and Figure 12, with Figure 9 Components that are the same as in FIG. 10 are denoted by the same symbols, and explanations thereof are appropriately omitted.

[0064] Such as Figure 1...

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Abstract

The invention relates to an aluminum alloy film, an electronic component and an active matrix substrate for photoelectric display devices. An aluminum alloy film is provided for preventing interface diffusion of ITO or Si and applying electrode film with low resistance in various electronic component required for low temperature technology. One of the embodiment of the invention of the Al alloy film comprises a first additive element formed of Ni and at least one kind of second additive element selected from 2a family alkaline-earth metal belonging to the second period or the third period of periodic table of elements, semimetals of 3b, 4b family. And the constitutional ratio of the first additive element is 0.5 to 5at%, the constitutional ratio of the second additive element is 0.1 to 3at%.

Description

technical field [0001] The present invention relates to an Al alloy film, an electronic device, and an active matrix substrate for an optoelectronic display device, in particular to wiring and an electrode film for an optoelectronic display device such as a liquid crystal display (display) or an organic EL display (hereinafter collectively referred to as "electrode film") ”), electronic devices such as semiconductor devices using the film, and active matrix substrates for optoelectronic display devices. Background technique [0002] As an example of a semiconductor device, for example, there is an optoelectronic display device using a TFT active matrix substrate using a thin film transistor (Thin Film Transistor, hereinafter referred to as TFT) as a switching element. Optoelectronic display devices are widely used as one of flat panel displays replacing CRTs (Cathode Ray Tubes) and utilizing features such as low power consumption and thin profile. [0003] The electrode fil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/532H01L23/48H01L27/12H01L27/32G02F1/1343G02F1/1368H01L21/28H01L21/3205H01L21/768H01L29/417H01L29/423H01L29/49H01L29/786
CPCH01L23/53219H01L27/1214H01L27/12H01L29/458H01L2924/12044G02F2001/136295G02F1/136295H01L27/124H01L2924/0002Y10T428/12438H01L2924/00C22C21/00G02F1/136H01L21/285
Inventor 井上和式石贺展昭长山显祐津村直树中畑匠
Owner MITSUBISHI ELECTRIC CORP
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