113714 results about "Capacitor" patented technology

A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.

A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.

An electrosurgical generator for supplying RF power to an electrosurgical instrument for cutting or vaporising tissue has an RF output stage with RF output devices, a series-resonant output network and an RF output. The generator offers improved cutting and vaporising performance, especially in relation to the reliability with which an arc can be struck when presented with an initial load impedance load. This is achieved by virtue of the output stage being capable of maintaining output pulses of at least 1 kW peak by supplying the RF output devices from a large reservoir capacitor. An appropriate combination of cutting performance and haemostasis is provided by allowing for pulsed or continuous wave operation once an arc has been established, according to whether or not a surplus energy condition exists, as indicated by the voltage across the reservoir capacitor.

A secondary power source system, includes a first unit receiving a primary power input and restricting a current used for charging to a predetermined amount, a second unit including a device providing capacitance, receiving a first output from the first unit with restricted current, a third unit generating a second output of a certain voltage, and a fourth unit performing a logical OR operation with the primary power input, first output from the first unit and second output from the second unit, to generate a single third output of a certain voltage.

An apparatus for controlling the speed of an AC motor comprising a switch adapted to be coupled in parallel with power terminals for the AC motor; a capacitor coupled in series with the parallel combination of the switch and the motor; the capacitor adapted to provide an AC supply voltage from an AC source to the parallel circuit comprising the motor and the switch; and a control circuit for controlling the conduction time of the switch in order to vary the speed of the motor. The switch is preferably pulse-width modulated at a frequency twice the line frequency of the AC supply voltage, and the switch is turned on when the voltage across the AC motor is zero volts. The apparatus is operable to provide for continuously variable control of the motor speed while minimizing acoustic noise in the motor.

An energy-reclamation apparatus of the present invention including at least a supercapacitor element connected with a charging source and a controlled circuit. After the supercapacitor element is charged to the potential of the charging source, the supercapacitor element and the charging source will work in series to conduct a repetitive polarity reversal of the supercapacitor element through a controlled circuit. As the supercapacitor element discharges, it is reversely charged concurrently. In other words, while the voltage of the supercapacitor element is decreasing on the side, a negative potential is complementarily developing on the other side. By repeatedly reversing the polarity of the supercapacitor element, more energy from the serially connected charging source can be reclaimed and reused.

According to the invention, a finger-operated switch for activating and operating an ultrasonic surgical handpiece is provided. The power output of the surgical handpiece is responsive and proportional to the pressure applied to the finger-operated switch. The finger-operated switch includes, but not limited to, force sensitive resistors whose resistance is proportional to the force applied by the finger of the human operator of the surgical handpiece, force sensitive capacitors whose capacitance is proportional to the pressure, deflection or compression of the insulation layer between two electrodes or is proportional to the spacing between the two conductive layers, strain gauges mounted underneath or integral to the housing of the surgical handpiece such that the pressure applied thereto results in an output change in the strain gauges, magnets or ferromagnets encased or embedded in an elastomer with a sensor inside the surgical handpiece that detects the field strength of the magnet and monitors changes relative to the force applied to the handpiece housing, and piezo film or piezo ceramic whose charge or voltage is proportional to the force applied.

A network of collection, charging and distribution machines collect, charge and distribute portable electrical energy storage devices (e.g., batteries, supercapacitors or ultracapacitors). To avoid theft and tampering of the portable electrical energy storage devices, by default, each portable electrical energy storage device is locked in and operably connected to the vehicle to which it provides power unless the vehicle comes within the vicinity of a collection, charging and distribution machine or other authorized external device such as that in a service center. Once within the vicinity of a collection, charging and distribution machine or other authorized external device a locking mechanism in the vehicle or within the portable electrical energy storage device unlocks and allows the portable electrical energy storage device to be exchanged or serviced.

A display including a current drive circuit capable of supplying a desired current to a light-emitting element in each pixel stably and accurately irrespective of the characteristic variations of active elements in the pixel, thereby providing a high-definition image. Each pixel is composed of a receiving transistor (TFT3) for receiving a signal current (1w) from a data ine (data) when a scanning line (scanA) is selected, a converting transistor (TFT1) for converting the current level of the received signal current (1w) to a voltage level and holding the voltage level, and a driving transistor (TFT3) for allowing a drive current having a current level corresponding to the held voltage level to flow through light-emitting element (OLED). The converting thin film transistor (TFT1) generates the converted voltage level at its gate by allowing the signal current (Iw) through its channel, and a capacitor (C) holds the voltage level at the gate of the transistor (TFT1). The transistor (TFT2) allows the drive current having a current level corresponding to the voltage level held by the capacitor (C) to flow through the light-emitting element (OLED).

A process for depositing a silicon-based material on a substrate uses the technology of plasma-enhanced atomic layer deposition. The process is carried out over several cycles, wherein each cycle includes: exposing the substrate to a first precursor, which is an organometallic silicon precursor; and applying a plasma of at least a second precursor, different from the first precursor. Semiconductor products such as 3D capacitors, vertical transistor gate spacers, and conformal transistor stressors are made from the process.

Implantable medical devices (IMDs) having sense amplifiers for sensing physiologic signals and parameters, RF telemetry capabilities for uplink transmitting patient data and downlink receiving programming and interrogation commands to and from an external programmer or other medical device are disclosed. At least one IC chip and discrete components have a volume and dimensions that are optimally minimized to reduce its volumetric form factor. Miniaturization techniques include forming notch filters of MEMS structures or forming discrete circuit notch filters by one or more of: (1) IC fabricating inductors into one or more IC chips mounted to the RF module substrate; (2) mounting each IC chip into a well of the RF module substrate and using short bonding wires to electrically connect bond pads of the RF module substrate and the IC chip; and (3) surface mounting discrete capacitors over IC chips to reduce space taken up on the RF module substrate. The IC fabricated inductors are preferably fabricated as planar spiral wound conductive traces formed of high conductive metals to reduce trace height and width while maintaining low resistance, thereby reducing parasitic capacitances between adjacent trace side walls and with a ground plane of the IC chip. The spiral winding preferably is square or rectangular, but having truncated turns to eliminate 90° angles that cause point-to-point parasitic capacitances. The planar spiral wound conductive traces are further preferably suspended over the ground plane of the IC chip substrate by micromachining underlying substrate material away to thereby reduce parasitic capacitances.

An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide / aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

A write-caching RAID controller is disclosed. The controller includes a CPU that manages transfers of posted-write data from host computers to a volatile memory and transfers of the posted-write data from the volatile memory to storage devices when a main power source is supplying power to the RAID controller. A memory controller flushes the posted-write data from the volatile memory to the non-volatile memory when main power fails, during which time capacitors provide power to the memory controller, volatile memory, and non-volatile memory, but not to the CPU, in order to reduce the energy storage requirements of the capacitors. During main power provision, the CPU programs the memory controller with information needed to perform the flush operation, such as the location and size of the posted-write data in the volatile memory and various flush operation characteristics.

A solid-state image sensor of a charge sorting method used in a time-of-flight measurement method, in which noise derived from background light, which is caused by the reflection light from the subject derived from background light is eliminated, reflection light from the subject derived from a predetermined light source, which is previously set in the solid-state image sensor, is effectively extracted as a signal component to achieve high sensitivity and low noise, which is a solid-state image sensor that is equipped with a plurality of charge-storage sections, discriminates photoelectrons generated by incoming light on the incoming timing and sort to the above-described plurality of charge-storage sections, and measures the timing of the incoming light, in which the sensor has: a plurality of capacitors that capable of conducting to the plurality of charge-storage sections; and a control section that controls a conducted state between the above-described plurality of charge-storage sections and the above-described plurality of capacitors, in which by selectively conducting the above-described plurality of charge-storage sections and the above-described plurality of capacitors by the control of the above-described control section, the difference component of charge stored in the above-described plurality of charge-storage sections is extracted.

A composite, layered, integrated circuit formed by bonding of insulator layers on wafers provides for combination of otherwise incompatible technologies such as trench capacitor DRAM arrays and high performance, low power, low voltage silicon on insulator (SOI) switching transistors and short signal propagation paths between devices formed on respective wafer layers of a chip. In preferred embodiments, an SOI wafer is formed by hydrophilic bonding of a wafer over an integrated circuit device and then cleaving a layer of the second wafer away using implanted hydrogen and low temperature heat treatment. Further wafers of various structures and compositions may be bonded thereover and connections between circuit elements and connection pads in respective wafers made using short vias that provide fast signal propagation as well as providing more numerous connections than can be provided on chip edges.

A hybrid film, comprising a first polymer film having a plasma-treated surface and a second polymer film having first and second surfaces, with the first surface of the second polymer film being disposed along the first plasma-treated surface of the first polymer film, has superior thermal and mechanical properties that improve performance in a number of applications, including food packaging, thin film metallized and foil capacitors, metal evaporated magnetic tapes, flexible electrical cables, and decorative and optically variable films. One or more metal layers may be deposited on either the plasma-treated surface of the substrate and / or the radiation-cured acrylate polymer A ceramic layer may be deposited on the radiation-cured acrylate polymer to provide an oxygen and moisture barrier film. The hybrid film is produced using a high speed, vacuum polymer deposition process that is capable of forming thin, uniform, high temperature, cross-liked acrylate polymers on specific thermoplastic or thermoset films. Radiation curing is employed to cross-link the acrylate monomer. The hybrid film can be produced in-line with the metallization or ceramic coating process, in the same vacuum chamber and with minimal additional cost.

A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (HfxSiyOz) layer is formed. The silicon content is gradually changed throughout the duration of the HfxSiyOz deposition process. The etching rate for the HfxSiyOz layer in dilute hydrogen fluoride solution is dependent on the silicon content y in the HfxSiyOz layer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.

The present invention discloses methods for depositing a material, particularly a conductive material, in cavities of a substrate and forming bonding contacts or pads thereon. An intracavity structure may be utilized in conjunction with embodiments of the present invention to provide efficient filling of diverse cavities within the substrate. Also provided are embodiments for interconnection structures using filled cavities, along with electrically conductive or reactive structures which may include capacitors fabricated within a substrate.