757 results about "Negative potential" patented technology

An electrical storage device of the present invention is characterized in that a positive electrode, a negative electrode, a lithium electrode, and an electrolyte capable of transferring lithium ion is included, the lithium electrode is arranged to be out of direct contact with the negative electrode, and lithium ion can be supplied to the negative electrode by flowing a current between the lithium electrode and the negative electrode through an external circuit. With the above characteristic, problems such as non-uniform carrying of lithium ion to the negative electrode, shape-change of a cell, and temperature increase of an electrolytic solution under incomplete sealing of a cell and the like can be easily solved. A using method of the electrical storage device is characterized in that, by using the lithium electrode as a reference electrode, the positive electrode potential and negative electrode potential can be measured, and the potential of the positive or negative electrode can be controlled when the electrical storage device is charged or discharged. Therefore, the potentials of the positive electrode and negative electrode can be monitored, thereby it can be easily determined whether deterioration of the electrical storage device is caused by the positive electrode or the negative electrode. Also, it is possible to control the device with the potential difference between the negative electrode and reference electrode, that is, the negative potential. In addition, when characteristics deteriorate such as the internal resistance increase, an appropriate amount of lithium ion can be supplied to the negative electrode and/or positive electrode by the lithium electrode.

A memory array contains memory cells designed to be erased using Fowler-Nordheim ("FN") tunneling through the channel area, and programmed using either channel hot electron injection ("CHE") or channel-initiated secondary electron injection ("CISEI"). To reduce disturbance of the floating gate potential of unselected memory cells during programming operations and read operations, the unselected word lines are brought to a negative potential rather than ground potential. To reduce disturbance of the floating gate potential of unselected memory cells during FN erase operations, the unselected word lines are brought to a positive potential rather than ground potential.

A method of formation and charge of a negative polarizable electrode of an electric double layer capacitor. The method can be used for manufacturing of high capacitance capacitors utilizing the energy of the electric double layer. The methods achieve hydrogen evolution on carbonaceous materials using very negative potentials. The methods provide an EDL capacitor, employing an aqueous electrolyte, with improved specific energy. The methods may also ensure the hermeticity of the capacitor. The methods include pretreating the electric double layer capacitor by keeping the negative polarizable electrode at a desired minimum potential prior to use. Desirably, the minimum potential ranges from about -0.25 to about -1.2 V vs. a reference hydrogen electrode.

In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.

Characteristics of a nonvolatile semiconductor memory device are improved. The memory cell comprises: an ONO film constituted by a silicon nitride film SIN for accumulating charge and by oxide films BOTOX and TOPOX disposed thereon and thereunder; a memory gate electrode MG disposed at an upper portion thereof; a select gate electrode SG disposed at a side portion thereof through the ONO film; a gate oxide film SGOX disposed thereunder. By applying a potential to a select gate electrode SG of a memory cell having a source region MS and a drain region MD and to the source region MS and by accelerating electrons flowing in a channel through a high electric field produced between a channel end of the select transistor and an end of an n-type doped region ME disposed under the memory gate electrode MG, hot holes are generated by impact ionization, and the hot holes are injected into a silicon nitride film SIN by a negative potential applied to the memory gate electrode MG, and thereby an erase operation is performed.

According to one embodiment of the invention, a method for chemical analysis includes providing a device having a drain region, a source region, and a gate region disposed therebetween, associating a buffer solution with the drain region and the source region, causing a potential difference between the drain region and the source region until a stable current is reached, replacing the buffer solution in the source region with a solution containing an analyte, and applying a negative potential to the source region to create a forward bias.

In accordance with one specific embodiment of the present invention, the ion assisted deposition source for thin films comprises an axially symmetric discharge region into which an ionizable gas is introduced, a sputter target at one end of that region, an axially symmetric magnetic field within and extending out the opposite and open end of that region, an anode around the circumference of that region, and an electron emitting cathode located near the open end of that region. Particles are sputtered from the sputter target, pass through the discharge region, and are deposited on a deposition substrate located exterior of both the discharge region and the deposition source. A beam of energetic ions from the discharge region bombards the film being deposited to improve the adhesion, density, and other properties of that film. The density of the plasma can be controlled with the emission from the cathode, the emission of sputtered particles from the sputter target can be controlled with the negative potential of that target, while the energy of the ions used to assist in the deposition can be controlled with the positive potential of the anode. The deposition source thus simultaneously generates a flux of sputtered material with which to deposit a film on a substrate and a beam of energetic ions to assist in that deposition, and does so with a simple and economical apparatus.

The invention belongs to the technical field of new environment-friendly materials, and particularly relates to a ceramal material for manufacturing hydrogen-enriched water and the preparing method and application thereof. The ceramal material is prepared from, by weight, 30-85 parts of base material component, 20-60 parts of hydrogen-enriched component, 2-25 parts of anti-microbial component, and 3-30 parts of binder. The base material component is prepared from tourmaline, serpeggiante, silicon oxide, calcium oxide and zeolite. The hydrogen-enriched component is prepared from magnesium metal powder, magnesia powder and KDF alloy powder. The anti-microbial component is prepared from zinc oxide, titanium oxide and cerium oxide. The binder is prepared from one or more of high-purity distilled water, carboxypropyl cellulose and bentonite. The ceramal material can be used for manufacturing alkalescent water, negative-potential water and hydrogen-enriched water and also has an anti-microbial function and a water activating function. The invention further provides the preparing method and application of the ceramal material. The technology is simple and easy to realize. The ceramal material can be applied to products including water purifiers, water purifying kettles and cups.

A method of diagnosing the health of an individual by collecting a breath sample from the individual and measuring the amount of each of a plurality of analytes in the sample. The amount of each analytes is measured by fitting a time response curve of a sample-evaluation fuel cell in which the fuel cell sample electrode is contacted with the sample with the analysis based on a function of standard time response curves for an equivalent fuel cell configuration obtained separately for each of the analytes on a fuel cell with equivalent construction as sample-evaluation fuel cell. Each of the plurality of analytes is generally indicative of an aspect of the individual's health. Suitable analytes include, for example, inorganic compounds as well as compositions that exhibit negative reduction reactions at least for a portion of the time response curve. In particular, acetone exhibits a negative potential/current peak when it is an analyte in a fuel cell in an sample electrode with a counter electrode exposed to oxygen, which may or may not be introduced in the form of air. Various forms of analysis to estimate acetone concentrations in the breath can be used.

An apparatus and method for controlling charged particles. The charged particles comprise electrons and positive ions. A magnetic field having only point cusps is used to confine energetic injected electrons and so to generate a negative potential well. Positive ions injected into or created within the negative potential well are trapped therein. The magnetic field is generated by current-carrying elements arranged at positions spaced from but closely adjacent and parallel to edges of a polyhedron which has an even number of faces surrounding each vertex or corner. The current-carrying elements are spaced apart at their corners (the vertices of the polyhedron) so as not to touch, and the containing structures for the current-carrying coils of the magnetic-field-providing system are conformal to the fields so produced. Preferably, the coils are placed on the outboard side of the confining coils so as to increases electron confinement.

An apparatus and method that reduces the dark current in each pixel of an image sensor, where each pixel has a pinned photodiode. A negative potential barrier at the transfer gate of each pixel is raised when the photodiode is integrating (when the transfer gate is “off”) to thereby eliminate dark current generation in this region. The potential barrier is applied via a “triple well” transistor circuit structure that is capable of handling a strongly negative voltage. The circuit structure also serves as a conduit for conducting a strongly positive voltage to minimize the potential barrier during signal transfer and readout, thereby reducing image lag.

An integrated circuit battery sensor and system thereof are provided. The battery sensor includes a voltage sensor configured to sample a voyage of a battery and a buffer in electrical communication with the voltage sensor and configured for scaling the sampled battery voltage and outputting a voltage signal proportional to the sampled battery voltage; wherein the voltage sensor is further configured for isolating the buffer from the battery. The voltage sensor includes a first capacitor coupled to a positive potential terminal of the battery and a second capacitor coupled to a negative potential terminal of the battery. The battery sensor includes a first die including a first and second input terminal configured for coupling to the positive and negative potential terminals of the battery; and a second die including the voltage sensor, wherein the first and second die are electrically isolated from each other.

A plasma ion implantation system includes a process chamber, a source for generating a plasma in the process chamber, a platen for holding a substrate in the process chamber, an implant pulse source configured to generate implant pulses for accelerating ions from the plasma into the substrate, and an axial electrostatic confinement structure configured to confine electrons in a direction generally orthogonal to a surface of the platen. The confinement structure may include an auxiliary electrode spaced from the platen and a bias source configured to bias the auxiliary electrode at a negative potential relative to the plasma.

An ion-beam source comprising: a plasma-generation unit for generating plasma and an ion-extraction unit for extraction and acceleration of ions from the aforementioned plasma, where the ion-extraction unit is made in the form of at least one grid under a negative potential. The plasma generating unit consists of a working chamber having a deeply immersed antenna cell. The cell contains a ferromagnetic core, a heat conductor with a heat sink, at least one inductive coil wound onto the ferromagnetic core, and a cap made from a dielectric material that sealingly covers the ferromagnetic core and the inductive coil.

The present invention mitigates loss of beam current, particularly for low energy ion beam transport. The present invention employs unipolar electrostatic quadrupole lenses instead of conventional dual positive and negative potential (bipolar) quadrupole lenses as beam focusing elements within a linear accelerator, reducing beam current losses therein. In addition, the present invention also includes systems and methods for switching between bipolar wiring and unipolar wiring.

A method for processing a substrate in a plasma processing chamber. The substrate is disposed above a chuck and surrounded by an edge ring while the edge ring being electrically isolated from the chuck. The method includes providing RF power to the chuck and providing a edge ring DC voltage control arrangement. The edge ring DC voltage control arrangement is coupled to the edge ring to provide first voltage to the edge ring, with the edge ring potential being one of a positive potential, a negative potential and a ground. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the edge ring DC voltage control arrangement is configured to cause the edge ring potential to be less than a DC potential of the substrate in an embodiment and to be substantially equal to the DC potential of the substrate in another embodiment.