769 results about "Negative potential" patented technology

An energy-reclamation apparatus of the present invention including at least a supercapacitor element connected with a charging source and a controlled circuit. After the supercapacitor element is charged to the potential of the charging source, the supercapacitor element and the charging source will work in series to conduct a repetitive polarity reversal of the supercapacitor element through a controlled circuit. As the supercapacitor element discharges, it is reversely charged concurrently. In other words, while the voltage of the supercapacitor element is decreasing on the side, a negative potential is complementarily developing on the other side. By repeatedly reversing the polarity of the supercapacitor element, more energy from the serially connected charging source can be reclaimed and reused.

An electrical storage device of the present invention is characterized in that a positive electrode, a negative electrode, a lithium electrode, and an electrolyte capable of transferring lithium ion is included, the lithium electrode is arranged to be out of direct contact with the negative electrode, and lithium ion can be supplied to the negative electrode by flowing a current between the lithium electrode and the negative electrode through an external circuit. With the above characteristic, problems such as non-uniform carrying of lithium ion to the negative electrode, shape-change of a cell, and temperature increase of an electrolytic solution under incomplete sealing of a cell and the like can be easily solved. A using method of the electrical storage device is characterized in that, by using the lithium electrode as a reference electrode, the positive electrode potential and negative electrode potential can be measured, and the potential of the positive or negative electrode can be controlled when the electrical storage device is charged or discharged. Therefore, the potentials of the positive electrode and negative electrode can be monitored, thereby it can be easily determined whether deterioration of the electrical storage device is caused by the positive electrode or the negative electrode. Also, it is possible to control the device with the potential difference between the negative electrode and reference electrode, that is, the negative potential. In addition, when characteristics deteriorate such as the internal resistance increase, an appropriate amount of lithium ion can be supplied to the negative electrode and / or positive electrode by the lithium electrode.

A memory array contains memory cells designed to be erased using Fowler-Nordheim ("FN") tunneling through the channel area, and programmed using either channel hot electron injection ("CHE") or channel-initiated secondary electron injection ("CISEI"). To reduce disturbance of the floating gate potential of unselected memory cells during programming operations and read operations, the unselected word lines are brought to a negative potential rather than ground potential. To reduce disturbance of the floating gate potential of unselected memory cells during FN erase operations, the unselected word lines are brought to a positive potential rather than ground potential.

A method of formation and charge of a negative polarizable electrode of an electric double layer capacitor. The method can be used for manufacturing of high capacitance capacitors utilizing the energy of the electric double layer. The methods achieve hydrogen evolution on carbonaceous materials using very negative potentials. The methods provide an EDL capacitor, employing an aqueous electrolyte, with improved specific energy. The methods may also ensure the hermeticity of the capacitor. The methods include pretreating the electric double layer capacitor by keeping the negative polarizable electrode at a desired minimum potential prior to use. Desirably, the minimum potential ranges from about -0.25 to about -1.2 V vs. a reference hydrogen electrode.

In a non-isolated DC / DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.

A leak in a membrane on top of a horizontal roof deck is located by applying conductive wires on the membrane underneath the aggregate in a grid pattern. A measuring and switching circuit generates voltage having a positive attached to the roof deck and a negative attached to the wires. The circuit has a relay for each wire which can be switched between a current sensor system and the negative potential. The sensor system is arranged to sense at each of the wires in turn the current flowing from the roof deck through any leak in the membrane to the wire. A micro-processor operates the relays in turn to connect all the other wires to the negative as a shield while each wire is sensed. From the output of the grid the changes in current in the x and y directions are analyzed to locate the leak in the membrane.

A new use for thermionic vacuum diode technology is disclosed wherein a vacuum diode is constructed using very low work function electrodes. A negative potential bias is applied to the cathode relative to the anode, and electrons are emitted. In the process of emission the electrons carry off kinetic energy, carrying heat away from the cathode and dissipating it at an opposing anode. The resulting heat pump is more efficient than conventional cooling methods, as well as being substantially scalable over a wide range of applications. Fabrication using conventional microelectronic fabrication techniques is possible.

The present invention is directed to a process for manufacturing a semiconductor device. It includes a step for forming a fine wiring, and provides a process for uniformly and positively forming a film of a barrier metal, such as tantalum, for preventing the metal, such as copper, which becomes the first material for the wiring, from diffusing into a silicon oxide film. The process involves depositing an oxide of a barrier metal on a substrate which is formed with a via hole by a process such as CVD process. A high quality barrier metal film is formed by reducing the oxide by applying a negative potential to the oxide in a solution in which hydrogen ions are present. Subsequently an embedded wiring is formed by embedding the main metal by a plating process and the like and polishing to remove unnecessary portions.

Characteristics of a nonvolatile semiconductor memory device are improved. The memory cell comprises: an ONO film constituted by a silicon nitride film SIN for accumulating charge and by oxide films BOTOX and TOPOX disposed thereon and thereunder; a memory gate electrode MG disposed at an upper portion thereof; a select gate electrode SG disposed at a side portion thereof through the ONO film; a gate oxide film SGOX disposed thereunder. By applying a potential to a select gate electrode SG of a memory cell having a source region MS and a drain region MD and to the source region MS and by accelerating electrons flowing in a channel through a high electric field produced between a channel end of the select transistor and an end of an n-type doped region ME disposed under the memory gate electrode MG, hot holes are generated by impact ionization, and the hot holes are injected into a silicon nitride film SIN by a negative potential applied to the memory gate electrode MG, and thereby an erase operation is performed.

According to one embodiment of the invention, a method for chemical analysis includes providing a device having a drain region, a source region, and a gate region disposed therebetween, associating a buffer solution with the drain region and the source region, causing a potential difference between the drain region and the source region until a stable current is reached, replacing the buffer solution in the source region with a solution containing an analyte, and applying a negative potential to the source region to create a forward bias.

In accordance with one specific embodiment of the present invention, the ion assisted deposition source for thin films comprises an axially symmetric discharge region into which an ionizable gas is introduced, a sputter target at one end of that region, an axially symmetric magnetic field within and extending out the opposite and open end of that region, an anode around the circumference of that region, and an electron emitting cathode located near the open end of that region. Particles are sputtered from the sputter target, pass through the discharge region, and are deposited on a deposition substrate located exterior of both the discharge region and the deposition source. A beam of energetic ions from the discharge region bombards the film being deposited to improve the adhesion, density, and other properties of that film. The density of the plasma can be controlled with the emission from the cathode, the emission of sputtered particles from the sputter target can be controlled with the negative potential of that target, while the energy of the ions used to assist in the deposition can be controlled with the positive potential of the anode. The deposition source thus simultaneously generates a flux of sputtered material with which to deposit a film on a substrate and a beam of energetic ions to assist in that deposition, and does so with a simple and economical apparatus.

The invention provides a GOA circuit applied to an In Cell type touch display panel. In a black screen period, a thirteenth N-type thin film transistor is controlled to be connected through a first global signal, all grades of scanning driving signals rise to high potential at the same time, a twelfth N-type thin film transistor is controlled to be connected through the first global signal to lower the potential of a second node, meanwhile, the potential of a first node is lowered, and the All Gate On function is prevented from failing. The second node is reset through a reset signal and a fourteenth N-type thin film transistor, and normal output is achieved after a black screen is awakened. In an intermediate stopping period, negative potential is set to be a pulse signal with the amplitude, the phase and the frequency the same as those of a touch signal, a fifteenth N-type thin film transistor is controlled to be connected through a second global control signal to output the negative potential in a pulse form, and crosstalk between the touch signal and a scanning output end is reduced.

In a situation where a memory cell includes an ONO film, which comprises a silicon nitride film for charge storage and oxide films positioned above and below the silicon nitride film; a memory gate above the ONO film; a select gate, which is adjacent to a lateral surface of the memory gate via the ONO film; a gate insulator positioned below the select gate; a source region; and a drain region, an erase operation is performed by injecting holes generated by BTBT into the silicon nitride film while applying a positive potential to the source region, applying a negative potential to the memory gate, applying a positive potential to the select gate, and flowing a current from the drain region to the source region, thus improving the characteristics of a nonvolatile semiconductor memory device.

The invention belongs to the technical field of new environment-friendly materials, and particularly relates to a ceramal material for manufacturing hydrogen-enriched water and the preparing method and application thereof. The ceramal material is prepared from, by weight, 30-85 parts of base material component, 20-60 parts of hydrogen-enriched component, 2-25 parts of anti-microbial component, and 3-30 parts of binder. The base material component is prepared from tourmaline, serpeggiante, silicon oxide, calcium oxide and zeolite. The hydrogen-enriched component is prepared from magnesium metal powder, magnesia powder and KDF alloy powder. The anti-microbial component is prepared from zinc oxide, titanium oxide and cerium oxide. The binder is prepared from one or more of high-purity distilled water, carboxypropyl cellulose and bentonite. The ceramal material can be used for manufacturing alkalescent water, negative-potential water and hydrogen-enriched water and also has an anti-microbial function and a water activating function. The invention further provides the preparing method and application of the ceramal material. The technology is simple and easy to realize. The ceramal material can be applied to products including water purifiers, water purifying kettles and cups.

A method is provided for forming a three-dimensional article through successively depositing individual layers of powder material that are fused together so as to form the article, the method comprising the steps of: providing at least one electron beam source emitting an electron beam for at least one of heating or fusing the powder material, where the electron beam source comprises a cathode, an anode, and a Wehnelt cup between the cathode and anode; providing a guard ring between the Wehnelt cup and the anode and in close proximity to the Wehnelt cup, where the guard ring is having an aperture which is larger than an aperture of the Wehnelt cup; protecting the cathode and / or the Wehnelt cup against vacuum arc discharge energy currents when forming the three-dimensional article by providing the guard ring with a higher negative potential than the Wehnelt cup and cathode.

A plasma doping apparatus includes a pulsed power supply that generates a pulsed waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a pulsed plasma with the first power level during the first period and with the second power level during the second period. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage during a first period and second voltage with a negative potential that attract ions in the plasma to the substrate for plasma doping during a second period. At least one of the first and second power levels of the RF waveform is chosen to at least partially neutralize charge accumulating on the substrate.

A method of diagnosing the health of an individual by collecting a breath sample from the individual and measuring the amount of each of a plurality of analytes in the sample. The amount of each analytes is measured by fitting a time response curve of a sample-evaluation fuel cell in which the fuel cell sample electrode is contacted with the sample with the analysis based on a function of standard time response curves for an equivalent fuel cell configuration obtained separately for each of the analytes on a fuel cell with equivalent construction as sample-evaluation fuel cell. Each of the plurality of analytes is generally indicative of an aspect of the individual's health. Suitable analytes include, for example, inorganic compounds as well as compositions that exhibit negative reduction reactions at least for a portion of the time response curve. In particular, acetone exhibits a negative potential / current peak when it is an analyte in a fuel cell in an sample electrode with a counter electrode exposed to oxygen, which may or may not be introduced in the form of air. Various forms of analysis to estimate acetone concentrations in the breath can be used.

An apparatus and method for controlling charged particles. The charged particles comprise electrons and positive ions. A magnetic field having only point cusps is used to confine energetic injected electrons and so to generate a negative potential well. Positive ions injected into or created within the negative potential well are trapped therein. The magnetic field is generated by current-carrying elements arranged at positions spaced from but closely adjacent and parallel to edges of a polyhedron which has an even number of faces surrounding each vertex or corner. The current-carrying elements are spaced apart at their corners (the vertices of the polyhedron) so as not to touch, and the containing structures for the current-carrying coils of the magnetic-field-providing system are conformal to the fields so produced. Preferably, the coils are placed on the outboard side of the confining coils so as to increases electron confinement.

The invention discloses a pixel circuit, an organic electroluminescence display panel and a display device. By adding a switch module to the pixel circuit, an abnormal driving current outputted by a driving module can be prevented from flowing to a light emitter when a first display frame starts, and a screen flickering problem of a display panel generated during starting the first frame can be ameliorated, as the abnormal driving current of the pixel circuit can be prevented by the switch module from flowing to the light emitter, so high level signals can be prevented from flowing to a low level signal end before low level signals are inputted to the low level signal end of the pixel circuit, the low level signal end of the pixel circuit has no positive potential before the low level signals are received by the low level signal end, and thereby a problem that abnormal display of the display panel caused by a self-protection function of a power source signal chip triggered by positive and negative potential reception pressures at the low level signal end of the pixel circuit can be ameliorated.

An apparatus and method that reduces the dark current in each pixel of an image sensor, where each pixel has a pinned photodiode. A negative potential barrier at the transfer gate of each pixel is raised when the photodiode is integrating (when the transfer gate is “off”) to thereby eliminate dark current generation in this region. The potential barrier is applied via a “triple well” transistor circuit structure that is capable of handling a strongly negative voltage. The circuit structure also serves as a conduit for conducting a strongly positive voltage to minimize the potential barrier during signal transfer and readout, thereby reducing image lag.

A method of diagnosing the health of an individual by collecting a breath sample from the individual and measuring the amount of each of a plurality of analytes in the sample. The amount of each analytes is measured by fitting a time response curve of a sample-evaluation fuel cell in which the fuel cell sample electrode is contacted with the sample with the analysis based on a function of standard time response curves for an equivalent fuel cell configuration obtained separately for each of the analytes on a fuel cell with equivalent construction as sample-evaluation fuel cell. Each of the plurality of analytes is generally indicative of an aspect of the individual's health. Suitable analytes include, for example, inorganic compounds as well as compositions that exhibit negative reduction reactions at least for a portion of the time response curve. In particular, acetone exhibits a negative potential / current peak when it is an analyte in a fuel cell in an sample electrode with a counter electrode exposed to oxygen, which may or may not be introduced in the form of air. Various forms of analysis to estimate acetone concentrations in the breath can be used.

An integrated circuit battery sensor and system thereof are provided. The battery sensor includes a voltage sensor configured to sample a voyage of a battery and a buffer in electrical communication with the voltage sensor and configured for scaling the sampled battery voltage and outputting a voltage signal proportional to the sampled battery voltage; wherein the voltage sensor is further configured for isolating the buffer from the battery. The voltage sensor includes a first capacitor coupled to a positive potential terminal of the battery and a second capacitor coupled to a negative potential terminal of the battery. The battery sensor includes a first die including a first and second input terminal configured for coupling to the positive and negative potential terminals of the battery; and a second die including the voltage sensor, wherein the first and second die are electrically isolated from each other.

A plasma ion implantation system includes a process chamber, a source for generating a plasma in the process chamber, a platen for holding a substrate in the process chamber, an implant pulse source configured to generate implant pulses for accelerating ions from the plasma into the substrate, and an axial electrostatic confinement structure configured to confine electrons in a direction generally orthogonal to a surface of the platen. The confinement structure may include an auxiliary electrode spaced from the platen and a bias source configured to bias the auxiliary electrode at a negative potential relative to the plasma.

A complementary metal oxide semiconductor (CMOS) image sensor and a method for operating the same are provided. The CMOS image sensor includes a pixel array unit having a matrix of pixels, wherein each pixel comprises a charge transfer element for transferring charge collected in a photoelectric conversion element to a charge detection element, and a row drive unit for supplying a voltage to the charge transfer element during part of a charge integration period of the photoelectric conversion element, wherein the supplied voltage causes the charge transfer element to have a negative potential.

A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.

An ion-beam source comprising: a plasma-generation unit for generating plasma and an ion-extraction unit for extraction and acceleration of ions from the aforementioned plasma, where the ion-extraction unit is made in the form of at least one grid under a negative potential. The plasma generating unit consists of a working chamber having a deeply immersed antenna cell. The cell contains a ferromagnetic core, a heat conductor with a heat sink, at least one inductive coil wound onto the ferromagnetic core, and a cap made from a dielectric material that sealingly covers the ferromagnetic core and the inductive coil.

The present invention mitigates loss of beam current, particularly for low energy ion beam transport. The present invention employs unipolar electrostatic quadrupole lenses instead of conventional dual positive and negative potential (bipolar) quadrupole lenses as beam focusing elements within a linear accelerator, reducing beam current losses therein. In addition, the present invention also includes systems and methods for switching between bipolar wiring and unipolar wiring.