22 results about "Hot electron" patented technology

To stably form an insulating film of high quality in a reactive ion plating apparatus and method.SOLUTION: In the reactive ion plating apparatus 10, an evaporation material 24 stored in a crucible 20 is heated and evaporated by an electron gun 22. In addition, the ionization power Wd is supplied to the crucible 20 as an anode and the hot cathode filament 34 that emits thermoelectrons as a cathode. Accordingly, the plasma 100 is induced. Further, the reactive gas is introduced into the vacuum chamber 12 through the hollow anode 46, and the hollow anode power Wh is supplied to the hollow anode 46. Accordingly, the hollow anode plasma 200 is induced. A hollow anode filament 48 is provided at a gas discharge port of the hollow anode 46. The hollow anode filament 48 becomes a stable anode by being heated by Joule heat.SELECTED DRAWING: Figure 1

The application relates to the technical field of vacuum coating, in particular to a permeation and plating integrated coating device. The permeation and plating integrated coating device comprises a permeation and plating module, the permeation and plating module comprises a coating chamber, a coating arc source, an anode component, a first arc striking mechanism and an ion gun; the coating arc source, the first arc striking mechanism and the ion gun are connected with the coating chamber, the inside of the coating chamber is provided with a containing station for placing a workpiece, the anode component is arranged on the side of the containing station which is away from the ion gun, a working space is used for inputting nitrogen gas for nitriding or coating reaction gas, the first arc striking mechanism is arranged corresponding to the ion gun, so that the ion gun emits a hot electron beam towards the anode component. The permeation and plating integrated coating device can perform nitriding and coating treatment on the workpiece, so that nitrogen ions penetrate into the inside of the workpiece, so as to increase the hardness of the workpiece, and the film layer performance and the overall hardness performance of the treated workpiece are greatly improved.

The invention relates to the field of research, development and application of nano semiconductor multi-valued logic devices and four-valued phase inverters, and particularly provides a four-valued phase inverter based on a double-peak type anti-bipolar transistor and a preparation method of the four-valued phase inverter, which are used for realizing four-element multi-valued logic. The invention creatively provides a bimodal reverse bipolar transistor (Bi-AAT) capable of realizing quaternary multi-valued logic, transverse and longitudinal heterojunctions are constructed, the interband tunneling effect and the thermionic emission effect correspond to two current transmission paths respectively, and the field effect transistor based on a single heterojunction shows unique Bi-AAT properties; on the basis, an n-type FET matched with the Bi-AAT is formed on the basis of similar n-type materials in the Bi-AAT, so that the Bi-AAT and the n-type FET are connected in series to form a four-valued inverter, and a new technical path is provided for implementation of a four-element multi-valued logic device.

The present application relates to a kind of multi-wavelength surface plasmon hot electron photodetector and its preparation method and application, its structure includes substrate, two-dimensional material layer, vanadium dioxide micro-nano structure, graphene layer and top driving electrode.The detector realized by the present application not only has the characteristics such as wide spectrum, real-time tuning, room temperature operation and wavelength selectivity, and the detection performance is significantly improved.

A dielectric layer of a semiconductor device may be treated using an oxidation treatment process to tune the dielectric constant of the dielectric layer. For example, an etch stop layer (ESL) in an interconnect layer of the semiconductor device may be formed of a high dielectric constant (high-k) dielectric material, which provides etch selectivity for the ESL relative to other dielectric layers in the interconnect layer. A recess may be formed through the ESL and through the dielectric layers, and a conductive structure may be formed in the recess. Prior to formation of the conductive structure, an oxidation treatment operation may be performed to oxidize the exposed ends of the ESL in the recess. The oxidation treatment may lower the dielectric constant of the ends of the ESL, which may result in the ends of the ESL being less susceptible to current leakage through tunneling, hot-carrier injection, and / or thermionic emission.

An ion generation device apparatus is provided, comprising: an arc chamber housing, forming an ion source arc chamber; a thermionic emitter, comprising a filament and a cathode positioned at an end of the ion source arc chamber; and a guide member, positioned around the cathode to form a guide channel, wherein a top end surface of the guide member protrudes higher than an upper surface of the cathode, wherein at least two gas inlets positioned on the ion source arc chamber are correspondingly and symmetrically positioned on two sides of a central extension line of the cathode, to more evenly provide a source gas to the ion source arc chamber. In addition, electrons are enabled to move as far as possible to the gas inlets by using the guide member, thereby increasing an opportunity that the electrons react with the gas.

According to the model and the simulation method for emitting the microscopic hot electrons to the macroscopic electromagnetic pulse, particle simulation and three-dimensional electromagnetic field simulation are innovatively coupled, and full-chain integrated simulation from microscopic particle dynamics to macroscopic electromagnetic radiation is realized; the technical problem that a micromechanism and macroscopic performance are disjointed in a traditional simulation method is effectively solved; meanwhile, the method has good universality and adaptability, and influences of multiple factors such as laser parameters, target material characteristics and experimental environments can be fully considered. By adjusting simulation parameters, electromagnetic pulse characteristics under different experiment conditions can be accurately predicted, and reliable theoretical guidance is provided for optimizing an experiment design scheme. The method is not only suitable for performance evaluation of an existing laser device, but also can provide technical support for electromagnetic pulse management of a higher-power laser device in the future.

X-ray generating device (11), comprising: a sealed X-ray tube (31) with a cathode (41) from which thermionic electrons are emitted and an anode (42) which is irradiated with an electron beam obtained by accelerating the thermionic electrons with a potential difference applied between the cathode (41) and the anode (42); a magnetic field generating section (32) arranged near the sealed X-ray tube (31) to apply a magnetic field to the electron beam, the magnetic field extending in a first direction that intersects a propagation direction of the electron beam; and a rotary drive system (33) designed to rotate the sealed X-ray tube (31) with respect to a central axis of the cathode (41) and the anode (42), wherein the anode (42) has a surface with a first region and a second region, which are arranged on one side and another side respectively with respect to a straight dividing line passing through an intersection of the surface and the central axis; wherein the first region comprises a first metal arranged therein and the second region comprises a second metal arranged therein, wherein the second metal differs from the first metal, wherein the sealed X-ray tube (31) is driven by the rotary drive system (33) to a position in which the sealed X-ray tube (31) is arranged with respect to the magnetic field generating section (32) such that the straight dividing line which separates the first anode region from the second anode region lies along the first direction of the magnetic field.

The invention provides a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, the quantum tunneling hole injection layer is arranged in the laser, and SIMS test Al ion strength or Al atom concentration distribution in the quantum tunneling hole injection layer has asymmetric double-S-type function distribution. A peak value region of valence band effective state density and a valley value region of hole mobility are formed in the quantum tunneling hole injection layer, and the peak value position of the valence band effective state density just corresponds to the valley value position of the hole mobility, so that a quantum tunneling region is formed, and diffusion, migration and hot electron emission of hole carriers are blocked. The hole tunneling probability of the layer is enhanced, hole carriers are made to jump and pass through the upper limiting layer and the upper waveguide layer in a quantum tunneling mode, hole wave function distribution and light field distribution injected into the active layer are regulated and controlled, the quantum recombination efficiency of the gallium nitride laser is enhanced, light absorption loss is reduced, and the threshold value and the lasing power of the laser are reduced; and the aging light attenuation of the laser is improved.

An electron tube (100) is provided including: a cathode (3) that emits thermoelectrons; an anode including a plurality of anode pieces (4) arranged, so as to surround the cathode (3), in an anode cyli

The invention belongs to the field of composite material preparation, discloses an H-ZISv / Au-Ag HAPs composite material as well as a preparation method and application thereof, and solves the problem of poor photocatalytic hydrogen evolution performance of an existing photocatalyst. The H-ZISv / Au-Ag HAPs composite material is formed by loading hollow Au-Ag alloy nano particles on a hollow ZnIn2S4 nano cage containing sulfur vacancies, and the H-ZISv / Au-Ag HAPs composite material is a novel double-hollow plasma Schottky heterojunction photocatalyst. The material promotes the generation of a large amount of current carriers through the cooperation of a multi-light scattering / reflection effect and directional charge transfer; and the material has efficient hot electron excitation and excellent photothermal conversion performance. Through the synergistic effect generated by the optimized Schottky junction, plasma near-field enhancement and double-cavity constraint, the photo-thermal assisted photoelectrochemical reaction is improved. The catalyst has a hydrogen generation rate of 16 mmol g <-1 > h <-1 > and excellent stability under the conditions of AM 1.5 G illumination and 25 DEG C.

A soft X-ray tube structure for electrostatic elimination and its verification method are disclosed, belonging to the field of X-ray tubes. A spherical spiral tungsten filament emitting cathode is disposed within the vacuum tube; a spherical cap-shaped beryllium anode target electrode is disposed in front of the spherical spiral tungsten filament emitting cathode, with a tungsten coating deposited on its inner surface; a spherical cap-shaped confinement electrode is disposed behind the spherical spiral tungsten filament emitting cathode; the center points of the spherical cap-shaped beryllium anode target electrode, the spherical cap-shaped confinement electrode, and the spherical spiral tungsten filament emitting cathode are spatially aligned. This design enables uniform, wide solid angle radiation of soft X-rays, thereby significantly improving the electrostatic elimination range; it effectively avoids the thermionic leakage caused by the circular tubular focusing electrode in existing technologies, thus improving the soft X-ray emission efficiency / effectiveness, and consequently improving the electrostatic elimination efficiency / effectiveness; simultaneously, it effectively avoids the reduction in the insulation performance of the vacuum tube bottom surface caused by the sputtering of thermionic electrons themselves.

Provided is a memory cell with which it is possible to reliably inject a charge into a floating gate even if the film thickness of a gate insulating film has been increased. A memory cell 1a has a configuration in which a program transistor 2a is constituted by a PMOS transistor and electrons can be injected into a floating gate FG by hot electron injection using CHE. Due to this configuration, the memory cell 1a is configured so that a charge can be reliably injected into the floating gate FG even if the film thickness of gate insulating films 8a, 8b, 8c has been increased.

The invention provides an upright graphene heterojunction, application and a preparation method. The upright graphene heterojunction comprises a silicon carbide layer, an aluminum oxide layer, a gallium arsenide layer and upright graphene which are sequentially arranged in a layered manner. In the vertical graphene heterojunction provided by the invention, through the cooperation of the silicon carbide layer and the aluminum oxide layer, the vertical graphene is used as a light absorption main body, the gallium arsenide layer is used as a hot electron absorption layer, and the vertical graphene heterojunction is used for carrier modulation and is used as an amplification channel. Through cooperation of the silicon carbide layer, the aluminum oxide layer and the gallium arsenide layer, the upright graphene heterojunction can realize detection of near-infrared light.

The invention provides a defect suppression and process method for refractory alloy powder bed electron beam additive manufacturing, and relates to the technical field of refractory alloy additive manufacturing. The method comprises four links of powder pretreatment, substrate segmented and partitioned preheating, electron beam cladding forming and post-treatment stress release, specifically, a forming foundation is laid through accurate oxygen-controlled and density-controlled powder pretreatment, a substrate thermal field is balanced by adopting a segmented progressive and partitioned synchronous heating mode, electron beam parameters are regulated and controlled based on a self-created correction energy density formula, and the electron beam cladding forming process is completed. And a full-region segmented staggered scanning strategy is matched, real-time early warning and closed-loop regulation and control of defects are realized in combination with a hot crack sensitivity pre-judgment algorithm, and finally residual stress is released through segmented heat preservation annealing. Through full-process coupling regulation and control, the method is suitable for preparing complex components with the wall thickness being 2-50 mm and the size being smaller than or equal to 1000 mm, has forming stability and industrial application value, and can be widely applied to the field of high-end equipment such as aerospace and the nuclear industry.

The invention relates to a high-gain short-wave infrared photoelectric detector based on a metal-silicon micro-nano structure and a preparation method of the high-gain short-wave infrared photoelectric detector, and belongs to the technical field of photoelectric detection. The detector comprises a first metal film layer, a silicon film layer and a second metal film layer which are sequentially arranged, the junction formed by the first metal film layer and the silicon film layer and the junction formed by the second metal film layer and the silicon film layer are independently Schottky junctions or ohmic junctions, and the junction formed by the first metal film layer and the silicon film layer and the junction formed by the second metal film layer and the silicon film layer are not ohmic junctions at the same time; the silicon film layer is of a micro-nano structure, and the thickness of the silicon film layer ranges from 50 nm to 5000 nm. The first metal film layer or the second metal film layer is provided with a micro-nano structure consistent with or corresponding to the silicon film layer. Near-infrared light in the wave band of 1100-2000 nm can be detected, a high-strength electric field can be established in the silicon film layer under small bias voltage, photoconductive gain and an avalanche multiplication effect are further introduced, and the photoelectric response characteristic of hot electrons in the near-infrared wave band is greatly improved.

The invention belongs to the technical field of optical instruments, and particularly relates to a lateral heat dissipation structure for refrigeration of an electric vacuum detector and the electric vacuum detector. The lateral heat dissipation structure for refrigeration of the electric vacuum detection device comprises a refrigeration module and a lateral heat dissipation module, and the refrigeration module is connected with a cathode of the electric vacuum detection device and used for conducting refrigeration and heat conduction on the cathode; and the lateral heat dissipation module is connected with the refrigeration module, is parallel to the axial direction of the cathode, is arranged at the lateral position of the electric vacuum detection device, and is used for laterally conducting and dissipating heat generated by the refrigeration module. The lateral heat dissipation structure for refrigeration of the electric vacuum detection device is a refrigeration structure which is compact in structure, efficient in heat conduction and adaptive to various electric vacuum detection devices, thermal noise and hot electron emission of a core component are remarkably restrained, and the overall performance of the device is improved.

An electron emitter according to one or more example embodiments for a rotary piston X-ray tube has a segmented emitter surface including at least two emitter elements which can be activated independently of each other and is set up to activate at least one subset of the segments of the segmented emitter surface as an activated emission surface for emitting electrons from the activated emission surface, wherein the at least two emitter elements are arranged in such a way that the segmented emitter surface is axially symmetrical in an emitter surface place, at least one emitter element of the at least two emitter elements is embodied for the thermionic emission of electrons, and the at least two emitter elements are arranged such that a distance between the respective emitter surfaces is minimal.

A method for controlling a microwave heating electronic atomization device is disclosed. When the microwave heating electronic atomization device microwave heats the atomization medium, the method includes the steps of: acquiring the output power and reflected power per current unit time (S300); calculating a power adjustment coefficient based on the output power and reflected power per current unit time (S400); and optimizing the initial power per next unit time based on the power adjustment coefficient to obtain the output power per next unit time (S500). The output power per next unit time is used by the microwave heating electronic atomization device to heat and control the atomization medium in the next unit time. A microwave heating electronic atomization device and its control device are further disclosed.

The invention discloses a shape follow-up preheating electron beam selective melting electron optical system and a design method thereof. The shape follow-up preheating electron beam selective melting electron optical system comprises an electron beam forming unit and an electron beam focusing deflection unit. The electron beam forming unit comprises a central cathode and an annular cathode sleeving the outer side of the central cathode, suppression electrodes are arranged between the central cathode and the annular cathode and on the outer side of the annular cathode, an acceleration electrode is arranged on one side of a whole formed by the central cathode, the annular cathode and the suppression electrodes, and an electron beam focusing deflection unit is arranged on one side of the acceleration electrode; the electron beam focusing deflection unit comprises a collecting lens, an objective lens and a deflector which are sequentially arranged, the collecting lens and the objective lens are hollow and are respectively provided with a collecting lens coil and an objective lens coil, a plurality of deflector coils are uniformly distributed on the inner side of the deflector, and a second anastigmatism device is arranged in the inner side space of the collecting lens; a plurality of second anastigmatism device coils are uniformly distributed on the inner side of the second anastigmatism device, a first anastigmatism device is arranged in the inner side space of the second anastigmatism device, and a plurality of first anastigmatism device coils are uniformly distributed on the inner side of the first anastigmatism device.

This invention relates to the field of semiconductor processing technology, specifically to a semiconductor process chamber, a plasma ignition method, and semiconductor process equipment. The provided semiconductor process chamber includes: a chamber body, an auxiliary ignition assembly, and a sputtering assembly. The chamber body has a process cavity, and the sidewall of the chamber body has mounting holes. The auxiliary ignition assembly includes pipes, valves, and an electron generator. The pipes are located at the mounting holes and have valves. The electron generator is located at one end of the pipes and outside the process cavity, used to generate thermionic electrons and deliver them to the process cavity through the pipes. The sputtering assembly includes a target and a sputtering power source. The sputtering power source is electrically connected to the target to output sputtering power to the target, thereby creating an electric field inside the process cavity. Under the action of the electric field and thermionic electrons, the process gas inside the process cavity is excited to form plasma. This invention can solve the problem that current process chambers require a large amount of process gas during the ignition process and can increase the cavity's ability to fill vias.

The invention provides a tungsten-molybdenum alloy and an electron beam additive manufacturing method thereof, and the electron beam additive manufacturing method comprises the following steps: mixing tungsten powder and molybdenum powder to obtain tungsten-molybdenum alloy powder; a three-dimensional model for printing the tungsten-molybdenum alloy is established, printing process parameters are set, and then the tungsten-molybdenum alloy powder is subjected to electron beam additive manufacturing; the electron beam additive manufacturing comprises the steps of powder laying, first preheating, electron beam melting, second preheating and formed substrate descending which are sequentially and alternately carried out. By doping a certain amount of molybdenum powder, the strength and heat-conducting property of the tungsten-molybdenum alloy can be improved, and an electron beam additive manufacturing mode is adopted, so that the defect that elements cannot be fully mixed in traditional powder metallurgy manufacturing can be overcome, and the defect that cracks are likely to occur when tungsten-based alloy is manufactured through laser additive manufacturing can also be overcome.