109 results about "Electron injection" patented technology

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The invention discloses an organic light emitting diode with a visible-infrared multispectral band free switching function. The organic light emitting diode sequentially comprises an anode, a hole injection / transmission layer, an infrared light emitting unit, a charge generation layer, a visible light emitting unit, an electron injection / transmission layer and a cathode, the charge generation layer sequentially comprises a P-type semiconductor layer, a transparent conductive layer, a buffer layer and an N-type semiconductor layer, the P-type semiconductor layer is arranged adjacent to the visible light emitting unit, and the N-type semiconductor layer is arranged adjacent to the infrared light emitting unit. The infrared light-emitting unit is prepared by thermally activating the delayed fluorescent material, so that the internal quantum efficiency of the organic light-emitting diode is effectively improved. In addition, the charge generation layer with high conductivity is designed to be connected in series with the light-emitting units, so that an organic lighting source with a visible-infrared multispectral band free switching function can be constructed.

The application discloses a compound containing a bisphenanthroline structure, an organic electroluminescent device and a laminated organic electroluminescent device, and belongs to the technical field of semiconductor materials. The structure of the compound is shown in general formula (1). The compound is connected between two bisphenanthroline structure units through a specific structure unit, and the formed compound has good electron injection and transmission capacity, and good electron resistance and stability. When the compound is used as a material of an organic electroluminescent device, good efficiency and service life can be achieved under low driving voltage.

This application discloses a thin film, its preparation method, and an optoelectronic device, relating to the field of display technology. The thin film includes a first film layer, the material of which includes a first core-shell quantum dot. The first core-shell quantum dot includes a first quantum dot core and a first shell layer covering the first quantum dot core. The first film layer has a first surface and a second surface disposed opposite to each other. The thickness of the first shell layer near the first surface is less than the thickness of the first shell layer near the second surface. And / or, along the thickness direction of the thin film, the distance between the center of the first quantum dot core and the first surface is less than the distance between the center of the first quantum dot core and the second surface. The thin film provided in this application has a thinner first shell layer near the first surface, which is beneficial for improving electron injection efficiency, and a thicker second shell layer near the second surface, which is beneficial for preventing electron leakage to the hole side.

This invention relates to the field of power semiconductor technology, specifically to an IGBT device resistant to single-event radiation and its fabrication method. By setting a P-type buried layer region at the bottom of the second trench, the strong electric field at the bottom of the trench is effectively weakened. Simultaneously, the P-type buried layer provides additional hole pathways, accelerating the extraction process of transient electron-hole pairs generated after high-energy particle incident, thereby effectively reducing the risk of single-event burn-out and improving the reliability of the device under irradiation. Furthermore, by introducing an N-type buried layer region at the bottom of the first trench, the electron injection effect is enhanced, increasing the carrier concentration in the on-state and reducing the on-state voltage drop. This structure also helps suppress the accumulation of holes below the gate during single-event incident, weakening the transient high electric field below the gate and improving the device's single-event tolerance. By reducing the depth of the first trench, the gate capacitance of the device can be effectively reduced, increasing the switching speed and reducing switching losses. In summary, this invention maintains radiation resistance while also ensuring high-frequency electrical performance.

The invention discloses an acupuncture anesthesia system which comprises a grounding device, a wire and an acupuncture needle, one end of the grounding device is used for being conductively connected with the ground, the other end of the grounding device is conductively connected with one end of the wire, and the other end of the wire is conductively connected with the acupuncture needle; negative electrons in the ground can sequentially flow through the grounding device, the wire and the acupuncture needle to enter acupuncture points and blood of a human body or an animal body. The grounding device is directly communicated with the ground, and a ground super-large capacitor is used as a stable electron source; efficient and stable electron transmission is realized through a conductive path constructed by a wire; by means of an automatic electronic conduction path formed by the grounding device, the wire and the acupuncture needle, negative electron injection and analgesia can be continuously carried out for a long time without continuous manual operation, and therefore the analgesia effect of needle anesthesia is comprehensively improved.

A light-emitting device with a long lifetime is provided. A light-emitting device with high reliability is provided. The light-emitting device includes a first electrode, a first light-emitting layer, a first layer, a second layer, a third layer, a second light-emitting layer, and a second electrode stacked in this order. The first layer contains a first organic compound and a first substance. The second layer contains a second organic compound. The third layer contains a second substance. The first organic compound is an electron-transport material. The first substance is a metallic salt, a metal oxide, or an organometallic salt. The second organic compound is an electron-transport material. The second substance is an electron-injection material. The second layer has a lower concentration of the first substance than the first layer.

This invention discloses a compound containing a diazabenzene structure and an organic electroluminescent device comprising the same, belonging to the field of semiconductor materials technology. The structure of the compound described in this invention is shown in general formula (I-1) or general formula (I-2). This compound exhibits good stability and electronic tolerance, while also possessing excellent electron injection and electron transport capabilities. When used as an electron transport material in an organic electroluminescent device, the driving voltage of the device is significantly reduced, and the device lifetime is significantly improved, especially the high-temperature lifetime. General Formula (I-1) General Formula (I-2)

Disclosed are a compound of Chemical Formula 1 and an organic light emitting device comprising the same. The compound described in the specification can be used as a material for an organic material layer of an organic light-emitting device. The compound according to at least one exemplary embodiment of the present specification may improve efficiency, achieve low driving voltage, and / or improve lifespan characteristics in an organic light emitting device. In particular, the compounds described in the specification can be used as materials for electron injection and transport layers. Further, an organic light-emitting device in which the compound described in the present specification is used has the effects of low driving voltage, high efficiency, and / or long lifespan compared to an existing organic light-emitting device.

The invention relates to the technical field of manufacturing of deep ultraviolet semiconductor laser devices, in particular to a transverse-structure deep ultraviolet laser capable of promoting carrier injection and a preparation method of the transverse-structure deep ultraviolet laser. Comprising a substrate, a template layer, an n-type AlGaN contact layer, an n-AlN thin layer, an n-type AlGaN surrounding layer, a lower waveguide layer, a multi-quantum well layer, an upper waveguide layer, a p-type AlGaN surrounding layer, a p-type contact layer and a p-type metal electrode layer which are sequentially stacked from bottom to top. The surface of one side, far away from the template layer, of the n-type AlGaN contact layer is of a step-shaped structure; the step-shaped structure comprises a ridge surface and an independent step surface, the ridge surface bears the n-AlN thin layer, and the step surface is independently provided with an n-type metal electrode layer. The invention has the advantages that: heterojunction with different Al components is introduced into the n-type region and the p-type region of the device to generate two-dimensional electron gas, so that better electron injection and hole injection are realized, electron transmission paths are reduced, the joule heat of the device is reduced, the lasing threshold is greatly reduced, and the luminous power is improved.

A quantum dot light-emitting device, a preparation method thereof, and a display device, the quantum dot light-emitting device comprising: a quantum dot light-emitting layer; a carrier transport layer located at least one side of the quantum dot light-emitting layer; a monomolecular layer located between the carrier transport layer and the quantum dot light-emitting layer; wherein the material of the monomolecular layer is configured to transform the molecular configuration from a cis configuration to a trans configuration under visible light irradiation or heating conditions, and transform the molecular configuration from the trans configuration to the cis configuration under ultraviolet light irradiation conditions, and the molecular chain length of the trans configuration is greater than that of the cis configuration. The quantum dot light-emitting device of the present embodiment can achieve the effect of weakening electron injection and the effect of inhibiting the quenching of quantum dots by surface defects of inorganic metal oxide materials under light irradiation or heating conditions.

This application belongs to the field of display technology and relates to a composite thin film, comprising a first thin film and a second thin film stacked together; the first thin film includes a MOF material and an electron transport material, wherein the conductivity of the MOF material is greater than or equal to 5 × 10⁻³ S / m; the electron affinity of the second thin film is greater than or equal to 4.7 eV. This application also relates to a method for preparing the composite thin film, a light-emitting device, and a display device. The technical solution provided by this application can reduce the electron injection barrier of the thin film and improve the electron injection efficiency.

The present invention relates to a novel compound and an organic electroluminescent device using same, and, more specifically, to: an organic compound having excellent characteristics such as electron injection and transport ability, light emission ability, electrochemical stability and thermal stability; and an organic electroluminescent device in which characteristics such as luminous efficiency, driving voltage and lifetime are improved by comprising same in one or more organic material layers.

The invention discloses a triazine-containing compound and an organic electroluminescent device thereof, and belongs to the technical field of semiconductor materials. The structure of the compound is shown as any one of general formulas (2-3)-(2-5). The triazine-containing compound is applied to an organic thin film layer of an organic electroluminescent device. The triazine-containing compound has good stability and electron endurance capability, and also has good electron injection and electron transmission capability, and when the compound is used as a material of an organic electroluminescent device, the driving voltage of the device is remarkably reduced, and the service life of the device is remarkably prolonged.

The embodiment of the invention discloses a memory array and a preparation method thereof, a memory and electronic equipment, and relates to the technical field of semiconductors. The memory array includes a ferroelectric capacitor. A ferroelectric capacitor includes a first electrode layer, a second electrode layer, a first ferroelectric layer, a first electric dipole intercalation, and an electron injection intercalation. The second electrode layer and the first electrode layer are arranged oppositely. The first ferroelectric layer is located between the first electrode layer and the second electrode layer. The first electric dipole intercalation layer is located between the first ferroelectric layer and the second electrode layer. The electron injection intercalation is located between the first ferroelectric layer and the first electric dipole intercalation. The resistivity of the material of the electron injection intercalation is less than the resistivity of the material of the first electric dipole intercalation. On the basis of increasing a storage window and reducing operation voltage and power consumption by utilizing the first electric dipole intercalation layer, a large number of free electrons can be introduced by utilizing the electron injection intercalation layer, so that the imprint impression of the storage array and the memory applying the storage array is improved, and the characteristics and durability are maintained.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to an electron injection material and an OLED (Organic Light Emitting Diode). An electron injection layer material containing an N atom group is used as a main body material and is subjected to co-evaporation with low-work function metal to form an electron injection layer; the compound containing the N atom group in the main body material binds the low work function metal, so that the stability of the metal in the electron injection layer is improved, the interface bonding effect between the cathode and the electron transmission layer is optimized, the active metal content of the electron injection layer is reduced, the layering influence between the organic layer and the metal is reduced, and the performance of the device is improved. And the device life and luminous efficiency are improved.

The enhanced vertical cavity surface emitting laser (VCSEL) includes an epitaxially laterally overgrown semiconductor portion comprised of a III-nitride active region between a hole-injection III-nitride layer and an electron-injection III-nitride layer, an angled p-type mirror on the hole-injection side, and a planar mirror angled relative to the III-nitride active region, the planar mirror including a nanoporous layer on the electron-injection side and a non-porous layer on the n-side.

The extended vertical-cavity surface-emitting laser (VCSEL) includes an epitaxially laterally overgrown semiconductor portion, a III-nitride active region between a hole-injecting III-nitride layer and an electron-injecting III-nitride layer, and a nanoporous III-nitride layer on the electron-injecting III-nitride layer side.

This invention discloses a light-emitting device and a display panel. The light-emitting device includes a first electrode, a second electrode, at least two stacked light-emitting structural layers, a charge-generating layer, and an ion-blocking and electron-transporting layer; wherein the second electrode is disposed opposite to the first electrode; the light-emitting structural layer is located between the first electrode and the second electrode; the charge-generating layer is located between the two light-emitting structural layers; and the ion-blocking and electron-transporting layer is located between the charge-generating layer and the electron-transporting and injection layer of the light-emitting structural layer. In this invention, under high-temperature operation, the ion-blocking and electron-transporting layer can prevent ions in the charge-generating layer from diffusing into the electron-transporting and injection layer, avoiding interference with electron injection and transport, preventing holes and electrons from diffusing or interacting with each other, and also improving the efficiency of electron transport from the charge-generating layer to the electron-transporting and injection layer. While improving the luminous brightness, it effectively stabilizes and reduces the driving voltage of the light-emitting device during operation.

The invention relates to a charge injection device based on electric field-light irradiation. The charge injection device comprises a temperature controller, a refrigerator, a power supply controller, a high-voltage source, a metal electrode, an electro-optical crystal, a laser source, a beam-expanding collimating lens group, a reflective mirror and a signal line; the power supply controller outputs a control signal and transmits the control signal to the high-voltage source; the high-voltage source outputs voltage to two ends of the metal electrode under the triggering of the control signal; ohmic contact is formed between the metal electrode and the electro-optical crystal to ensure that the electric field injects electrons into the electro-optical crystal; the temperature controller controls the temperature of the refrigerator respectively, so that the electro-optical crystal is in a set constant-temperature environment; the laser outputs laser which is changed into wide parallel light beams through the beam-expanding collimating lens group and then is input into the spatial light modulator. The control system controls the spatial light modulator to change the intensity distribution of the laser and output the laser, and the laser irradiates the crystal light passing surface in the direction perpendicular to the electric field, so that the electron injection efficiency obtains a gain effect.

This invention provides a fully isolated LDMOS structure and its fabrication method. A P-type buried layer is formed below the N-type drift region, and an STI layer is formed in the N-type drift region between the N-type drain region and the P-type body region. This facilitates the high voltage withstand capability of the device through the vertical P-type buried layer and the surface STI field plate. Furthermore, the distance between the N-type drift region and the N-type isolation ring is increased laterally, forming a P-type well region between them. The P-type buried layer and the P-type well region achieve isolation of the drain voltage, avoiding latch-up effects and other reliability issues caused by electron injection into the substrate. In addition, the P-type epitaxial layer is formed in stages, which allows for precise control of the depth, doping concentration, and implantation energy of the P-type buried layer. By adjusting the lateral layout size and the dosage and energy of the vertical ion implantation, a fully isolated LDMOS structure in the medium-high voltage range of 60V~100V can be achieved.

This application discloses a light-emitting device, its fabrication method, and a display device. The light-emitting device includes a stacked anode, a hole-functional layer, a light-emitting layer, an electron-functional layer, and a cathode. The hole-functional layer has a first surface roughness, the light-emitting layer has a second surface roughness, and the electron-functional layer has a third surface roughness. The first surface roughness is less than the second surface roughness, or the second surface roughness is less than the third surface roughness. The light-emitting device proposed in this application, by controlling the roughness of the interfaces on both sides of the light-emitting layer, can improve hole injection, reduce electron injection, improve carrier balance, and enhance the light-emitting performance and lifespan of the device.

This application belongs to the field of display technology and relates to a composite thin film, comprising a first thin film and a second thin film stacked together. The first thin film is made of a nitrogen-containing aromatic onium salt, and the second thin film is made of a heteropolyacid. This application also relates to a method for preparing the composite thin film, a light-emitting device, and a display device. The technical solution provided by this application can form a certain dipole orientation capability within the composite thin film, improving electron injection efficiency.

An apparatus comprising: an ion trap, for example a 2 dimensional, 2D, ion trap such as a linear quadrupole ion trap, LIT, wherein the ion trap comprises a set of electrodes, for example wherein the 2D ion trap comprises two or more pairs of rod electrodes and optionally two end electrodes; a power supply configured to: generate a substantially rectangular radio frequency, RF, voltage waveform, wherein the RF voltage waveform includes a first set of states including a first state having a first voltage level and a second state having a second voltage level, wherein the first state and the second state are mutually opposed; and apply the generated RF voltage waveform to the set of electrodes, wherein the first set of states provides a trapping field in the ion trap for trapping ions in a trapping region thereof; an electron source, configured to inject electrons into the ion trap for reactions thereof with the ions, for example electron capture dissociation, ECD, hot ECD, electron induced dissociation, EID, and / or electron detachment dissociation, EDD; wherein the RF voltage waveform includes a second set of states including a first state having a first voltage level, wherein the first voltage level of the second set of states is between the first voltage level and the second voltage level of the first set of states; and wherein the electron source is configured to inject the electrons into the ion trap during the second set of states, for example only during the second set of states.

The invention discloses a compound containing an azabenzene structure and an organic electroluminescent device, and belongs to the technical field of semiconductor materials, and the structure of the compound is shown as a general formula (1-1) or a general formula (1-2). Meanwhile, the material has good electron injection and electron transport capabilities, and when the material is used as an electron transport layer material of an organic electroluminescent device, the driving voltage of the device is remarkably reduced, and the service life of the device is remarkably prolonged.

Provided are an electrode having particularly excellent atmospheric stability and electron injection properties, and an organic element using such an electrode. The present invention relates to a thin-film-modified electrode having a layer containing a metal and an organic compound capable of coordinating with the metal, or a layer having a structure in which a layer containing a metal and a layer containing an organic compound capable of coordinating with the metal are sequentially adjacent to each other on an electrode, the thin-film-modified electrode being characterized in that: the thin-film-modified electrode has a thin-film-modified layer having a structure in which a layer containing a metal and a layer containing an organic compound capable of coordinating with the metal are sequentially adjacent to each other; in calculation based on the density functional theory in which a metal is an aluminum atom, when the structure is optimized using a generic function: B3LYP / primary function: 6-31G, the sum of the distances between an atom coordinated with the metal and the aluminum atom in the organic compound is 4.06 or less.

The invention discloses a hexavalent chromium polluted underground water green remediation system and application. The hexavalent chromium polluted underground water green remediation system comprises a remediation well body and a non-contact sustainable electron injection system arranged in the remediation well body. The repair well main body comprises a shaft and a through hole formed in the wall of the shaft; the non-contact sustainable electron injection system comprises a medicament chamber and a graphite cathode plate; the medicament chamber is a closed space enclosed by a proton exchange membrane and a sealing plug, and a graphite anode plate and a sodium dithionite solution are accommodated in the medicament chamber; the graphite cathode plate is electrically connected with the graphite anode plate; according to the non-contact sustainable electron injection hexavalent chromium polluted underground water green remediation method, a reducing agent does not need to be added into a water-containing layer, the secondary pollution risk caused by the reducing agent and a product thereof is avoided, and green and efficient hexavalent chromium underground water remediation is achieved.

This invention relates to a method for fabricating a light-emitting diode (LED), comprising the following steps: sequentially depositing a bottom electrode, a light-emitting layer, an electron transport layer, and a top electrode stacked in the thickness direction on one side surface of a substrate, wherein the electron transport layer is made of ZnO or ZnMgO, and the top electrode is made of Al; coating the surface of the top electrode with an organic acid treatment agent, and thermally annealing to allow the material of the top electrode to penetrate into the material of the electron transport layer and react with the material of the electron transport layer to form an electron transport layer doped with the material of the top electrode. This invention can effectively reduce the energy level barrier between the light-emitting layer and the electron transport layer, enhance the electron injection performance of the LED, and improve the device performance of the LED.

Disclosed are a compound of Chemical Formula 1 and an organic light emitting device comprising the same. The compound described in the specification can be used as a material for an organic material layer of an organic light-emitting device. The compound according to at least one exemplary embodiment of the present specification may improve efficiency, achieve low driving voltage, and / or improve lifespan characteristics in an organic light emitting device. In particular, the compounds described in the specification can be used as materials for electron injection and transport layers. Further, an organic light-emitting device in which the compound described in the present specification is used has the effects of low driving voltage, high efficiency, and / or long lifespan compared to an existing organic light-emitting device.

The application provides a magnetic field generating device, comprising a sealed vacuum cavity, an electron injection module and a potential regulating structure, wherein the inner wall of the sealed vacuum cavity is provided with an electron reflection coating, the electron injection module is in communication with the sealed vacuum cavity, and the potential regulating structure is electrically connected with the sealed vacuum cavity; in this way, the electron is constrained to move in the sealed vacuum cavity, and the electron reflection coating on the inner wall of the sealed vacuum cavity is used to bounce the electron, so that the electron forms a continuous motion in the sealed vacuum cavity; compared with the mode of generating a magnetic field by electrifying a conductor, the energy loss and heating problem caused by the resistance can be reduced, the dependence on a low-temperature environment is avoided, the overall structure is relatively simplified, and the adjustment of the magnetic field strength can be realized by adjusting the electron injection condition.