259 results about "Electron injection" patented technology

The invention belongs to the technical field of organic electroluminescent materials, and provides an iridium-containing heterocyclic phosphorescent doping material and an organic electroluminescent device.The doping material has a compound general formula shown in the formula I. Quinoline and a naphthalene ring are connected through silane or germane, and a silicon or germanium six-membered heterocyclic structure is formed. And reacting with iridium metal and a diketone monomer to obtain the iridium metal heterocyclic phosphorescent organic light-emitting material. The heteroatom silicon or germanium in the material can adjust molecular orbital HOMO and LUMO energy levels, and the polarity effect of heteroatoms promotes electron migration, reduces interface potential barriers and electron injection barriers, reduces carrier injection loss and improves carrier mobility, so that driving voltage is reduced, and the external quantum efficiency of a device is improved. In addition, the silicon or germanium heterocyclic ring has better rigidity, so that the overall stability of the structure is enhanced, and the rigid structure can prolong the service life of the device.

The invention relates to the technical field of electroluminescence, and discloses a laminated organic light-emitting device and application thereof, and the laminated organic light-emitting device comprises an anode layer, a first light-emitting unit, an electron transport layer, an interface modification layer, a connection layer, a second light-emitting unit and a cathode layer which are sequentially arranged from bottom to top; the electron transport layer comprises a hole blocking layer and an n-type electron transport layer; wherein the n-type electron transport layer is composed of an n-type dopant and an organic electron transport material, has the functions of electron transport, charge separation and injection and regulation and control of the optical microcavity effect of the laminated device, can simplify the electron transport and connection layer structure of the laminated device, and effectively improves the conductivity of the laminated device; according to the laminated organic light-emitting device, the voltage drop of the body is obviously reduced, and the interface electron injection barrier is reduced, so that the laminated organic light-emitting device has the advantages of low driving voltage, high efficiency and long service life, and the effect of adjusting the optical microcavity of the device can be achieved by utilizing the n-type electron transport layer.

The invention belongs to the field of photoelectric device display, and particularly relates to an intrinsic stretchable electroluminescent device and a preparation method and application thereof. The intrinsic stretchable electroluminescent device is composed of an intrinsic stretchable transparent substrate, an intrinsic stretchable transparent anode, an intrinsic stretchable hole injection / transmission layer, an intrinsic stretchable luminescent layer, an intrinsic stretchable electron injection / transmission layer, a metal cathode and liquid metal. Each layer is prepared independently, the liquid metal is deposited on the metal cathode through blade coating, spraying, dispensing printing and the like, and the other layers are deposited into a film through a solution method or a vacuum evaporation method; in the preparation process, the intrinsic tensile property of the device can be realized without special structures (such as wrinkles, island bridges, snakelike, paper-cut and the like), and the method has the advantages of simple process, low cost, wide application range and universality.

An easy-to-adjust X-ray source enhancement system based on a cascaded high-density structure comprises a linear gas nozzle, a metal target, a fixed sleeve, a fixed rod and a three-dimensional mobile platform, and can effectively generate a two-stage high-density structure to enhance radiation of a betatron X-ray source. The device has the advantages of simplicity in operation, compact structure, generation of two-stage high-density structure distribution and good stability. The invention relates to the field of interaction of ultra-short and ultra-strong laser plasmas, in particular to a process of accelerating and driving high-brightness X-rays by laser tail field electrons, in the first stage, generated density falling edges are used for generating electron injection, and stable generation of large-charge electrons is promoted. And the second stage utilizes the characteristics of the high-density platform region to enhance the lateral oscillation of electrons, thereby improving the X-ray radiation energy and photon yield.

An extended vertical cavity surface emitting laser (VCSEL) includes: a laterally epitaxially overgrown semiconductor section comprised of a group III nitride active region located between a hole injection group III nitride layer and an electron injection group III nitride layer; and the nano-porous group III nitride layer is positioned on one side of the electron injection group III nitride layer.

Provided is a heterocyclic compound represented by Chemical Formula 1, and an organic light emitting device and a composition for an organic material layer, including the same. The heterocyclic compound can be used as a material for the organic material layer of the organic light emitting device. The compound may serve as a hole injection material, a hole transport material, a light emitting material, an electron transport material, an electron injection material, and the like in an organic light emitting device. In particular, the compound can be used as a material for a light emitting layer of an organic light emitting device.

An integrated configurable photodetector with an ultra-high circular polarization extinction ratio and a preparation method therefor are provided. The photodetector includes a metal reflective layer, a dielectric layer, an electrode layer, and a two-dimensional material layer. The electrode layer includes symmetrically arranged Z-shaped metallic optical antenna arrays which are respectively integrated with a source electrode and a drain electrode and have opposite chirality. The photodetector operates at zero bias state, and a photo-response is photovoltaic effect, hot electron injection, photo-thermoelectric effect and so on induced by a Schottky junction composed of the source electrode, the drain electrode and the two-dimensional material. By adjusting the distribution of the incident light in the source and drain electrode regions, under specific Circularly polarized light, photocurrents of equal magnitude but opposite directions cancel each other out, resulting in a net output of zero and significantly reducing noise.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The present invention relates to a spiro-type organic electroluminescent compound containing heteroatoms, a preparation method and an application thereof, and belongs to the technical field of organic luminescent materials. The general structural formula of the spiro-type organic electroluminescent compound containing heteroatoms is Formula 1: #imgabs0# The present invention provides a spiro-type organic electroluminescent compound containing heteroatoms. The compound has high electron injection and mobility rates, and has good film-forming properties and thermal stability. When used in the electron transport layer of an organic electroluminescent device, the compound can significantly improve the electron transport efficiency from the electron transport layer to the light-emitting layer, thereby improving the luminous efficiency, while reducing the driving voltage and extending the service life of the device.

Provided in the present disclosure are a light-emitting device and a display panel comprising same, and a display apparatus. The light-emitting device comprises: a first carrier layer, a light-emitting layer and a second carrier layer, which are arranged in a stacked manner, wherein the light-emitting layer comprises a first light-emitting layer, a second light-emitting layer and a third light-emitting layer, which are arranged in a stacked manner, with the first light-emitting layer being arranged close to the first carrier layer, and the first light-emitting layer and the third light-emitting layer have different carrier transport rates. The light-emitting device of the present disclosure has a structure of three light-emitting layers, wherein the first light-emitting layer which is close to an anode side has a good hole injection / transport capability, the third light-emitting layer which is close to a cathode side has a good electron injection / transport capability, and the second light-emitting layer in the middle has a good hole and electron transport capability. Electrons and holes can be better injected into the light-emitting layers, an exciton recombination zone can also be broadened, and a larger part of the recombination zone is made to be within the light-emitting layers, so as to reduce the energy loss of non-radiative transition, thereby improving the efficiency and stability of devices.

This organic electroluminescent element comprising a hole injection part, an electron injection part, and an organic part arranged between the hole injection part and the electron injection part, the organic part including a light-emitting layer, is configured such that the organic part has a refractive index periodic structure formed so that the refractive index periodically changes in a predetermined direction in a cross-sectional view obtained by cutting the organic part in a direction orthogonal to the thickness direction, or an electric field intensity periodic structure or a current intensity periodic structure, and light from the light-emitting layer causes resonance in the periodic structure. Through this configuration, the number of parameters to be considered in simulation and quality inspection during element design is reduced, which enables simulation and quality inspection to be more accurate, easier, and efficient.

The invention relates to an organic electronic device, and a display and lighting apparatus including the same. Specifically, the present invention relates to an organic electronic device comprising at least one electron transport, electron injection or electron generation layer comprising a compound of formula (I), a compound of formula (I), and a display and lighting device comprising said organic electronic device, wherein all positions at the "*" position that are not linked to the-(A) a-L moiety can be bound to another substituent; a is selected from substituted or unsubstituted aryl or heteroaryl; l is selected from substituted or unsubstituted aryl or heteroaryl or groups (II) and (III); "A" is an integer from 0 to 2.

The present application aims at providing a material for an organic EL element having excellent hole injection and transport properties, electron blocking ability, stability in a thin film state, and durability, and further, by combining the material with various materials for an organic EL element having excellent hole and electron injection and transport properties, electron blocking ability, stability in a thin film state, and durability so that the characteristics of each material can be effectively exhibited, an organic EL element having high efficiency, low driving voltage, and long life is provided. The arylamine compound having a specific structure in the present application is excellent in hole injection and transport ability, stability, and durability of a thin film, and thus, by selecting the arylamine compound having a specific structure as a material for a hole transport layer, holes injected from the anode side can be efficiently transported. Further, various organic EL elements combined with an electron transport material having a specific structure and the like exhibit good element characteristics.

The invention discloses an organic light emitting diode with a visible-infrared multispectral band free switching function. The organic light emitting diode sequentially comprises an anode, a hole injection / transmission layer, an infrared light emitting unit, a charge generation layer, a visible light emitting unit, an electron injection / transmission layer and a cathode, the charge generation layer sequentially comprises a P-type semiconductor layer, a transparent conductive layer, a buffer layer and an N-type semiconductor layer, the P-type semiconductor layer is arranged adjacent to the visible light emitting unit, and the N-type semiconductor layer is arranged adjacent to the infrared light emitting unit. The infrared light-emitting unit is prepared by thermally activating the delayed fluorescent material, so that the internal quantum efficiency of the organic light-emitting diode is effectively improved. In addition, the charge generation layer with high conductivity is designed to be connected in series with the light-emitting units, so that an organic lighting source with a visible-infrared multispectral band free switching function can be constructed.

The application discloses a compound containing a bisphenanthroline structure, an organic electroluminescent device and a laminated organic electroluminescent device, and belongs to the technical field of semiconductor materials. The structure of the compound is shown in general formula (1). The compound is connected between two bisphenanthroline structure units through a specific structure unit, and the formed compound has good electron injection and transmission capacity, and good electron resistance and stability. When the compound is used as a material of an organic electroluminescent device, good efficiency and service life can be achieved under low driving voltage.

This application discloses a thin film, its preparation method, and an optoelectronic device, relating to the field of display technology. The thin film includes a first film layer, the material of which includes a first core-shell quantum dot. The first core-shell quantum dot includes a first quantum dot core and a first shell layer covering the first quantum dot core. The first film layer has a first surface and a second surface disposed opposite to each other. The thickness of the first shell layer near the first surface is less than the thickness of the first shell layer near the second surface. And / or, along the thickness direction of the thin film, the distance between the center of the first quantum dot core and the first surface is less than the distance between the center of the first quantum dot core and the second surface. The thin film provided in this application has a thinner first shell layer near the first surface, which is beneficial for improving electron injection efficiency, and a thicker second shell layer near the second surface, which is beneficial for preventing electron leakage to the hole side.

Provided is an organic compound having electron injection properties and low solubility in water. Provided is an organic compound represented by general formula (G1). Note that in general formula (G1), Ar is an aromatic skeleton represented by general formula (Ar-1), L represents an alkylene group, an arylene group, or a heteroarylene group, n represents an integer of 0 to 3, m represents an integer of 1 to 4, and R1 to R12 each independently represent hydrogen or an alkyl group. In general formula (Ar-1), ring A represents a benzene ring or a naphthalene ring, ring B represents a naphthalene ring, an anthracene ring, or a phenanthrene ring, alpha represents oxygen, sulfur, carbon having a substituent, silicon having a substituent, or germanium having a substituent, and any m carbon atoms included in general formula (Ar-1) have m bonds in general formula (G1). # imgabs0 #

This invention relates to the field of power semiconductor technology, specifically to an IGBT device resistant to single-event radiation and its fabrication method. By setting a P-type buried layer region at the bottom of the second trench, the strong electric field at the bottom of the trench is effectively weakened. Simultaneously, the P-type buried layer provides additional hole pathways, accelerating the extraction process of transient electron-hole pairs generated after high-energy particle incident, thereby effectively reducing the risk of single-event burn-out and improving the reliability of the device under irradiation. Furthermore, by introducing an N-type buried layer region at the bottom of the first trench, the electron injection effect is enhanced, increasing the carrier concentration in the on-state and reducing the on-state voltage drop. This structure also helps suppress the accumulation of holes below the gate during single-event incident, weakening the transient high electric field below the gate and improving the device's single-event tolerance. By reducing the depth of the first trench, the gate capacitance of the device can be effectively reduced, increasing the switching speed and reducing switching losses. In summary, this invention maintains radiation resistance while also ensuring high-frequency electrical performance.

The invention discloses an acupuncture anesthesia system which comprises a grounding device, a wire and an acupuncture needle, one end of the grounding device is used for being conductively connected with the ground, the other end of the grounding device is conductively connected with one end of the wire, and the other end of the wire is conductively connected with the acupuncture needle; negative electrons in the ground can sequentially flow through the grounding device, the wire and the acupuncture needle to enter acupuncture points and blood of a human body or an animal body. The grounding device is directly communicated with the ground, and a ground super-large capacitor is used as a stable electron source; efficient and stable electron transmission is realized through a conductive path constructed by a wire; by means of an automatic electronic conduction path formed by the grounding device, the wire and the acupuncture needle, negative electron injection and analgesia can be continuously carried out for a long time without continuous manual operation, and therefore the analgesia effect of needle anesthesia is comprehensively improved.

A light-emitting device with a long lifetime is provided. A light-emitting device with high reliability is provided. The light-emitting device includes a first electrode, a first light-emitting layer, a first layer, a second layer, a third layer, a second light-emitting layer, and a second electrode stacked in this order. The first layer contains a first organic compound and a first substance. The second layer contains a second organic compound. The third layer contains a second substance. The first organic compound is an electron-transport material. The first substance is a metallic salt, a metal oxide, or an organometallic salt. The second organic compound is an electron-transport material. The second substance is an electron-injection material. The second layer has a lower concentration of the first substance than the first layer.

The present invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode includes: a quantum dot layer; an anion polymer layer formed on the surface of the quantum dot layer; and an electron transport layer formed on the surface of the anion polymer layer. In the quantum dot layer of the quantum dot light-emitting diode of the present invention, the surface in contact with the electron transport layer is coordinated with an anion polymer, and the remaining regions of the quantum dot layer still retain the original ligands. According to the principle of like charge repulsion and opposite charge attraction, when the surface ligand on the side of the quantum dot layer close to the electron transport layer is replaced with an anion polymer, the electron injection with the same charge as the functional group of this anion polymer can be hindered to a certain extent, thereby contributing to improving the effective recombination of carriers in the entire quantum dot layer and enhancing the device performance.

The application provides a super-junction IGBT device and a manufacturing method thereof, and a specific technical scheme is as follows: the application connects the positive forward conduction current path, the off hole extraction path and the separation of the super-junction IGBT through a P column region, and connects the front P type region with the second P column region, so that a longitudinal PNP structure is formed, the super-junction IGBT structure can be opened under the strong collector-emitter voltage of the short-circuit device, and the short-circuit current discharge channel of the super-junction IGBT structure can be formed through the bipolar transistor. The application provides the super-junction IGBT with innovation and practicability, the electron injection enhancement structure and the off hole extraction path are optimized, and the compromise of the conduction performance, the switching characteristic and the short-circuit capability of the super-junction IGBT is significantly improved.

This invention discloses a compound containing a diazabenzene structure and an organic electroluminescent device comprising the same, belonging to the field of semiconductor materials technology. The structure of the compound described in this invention is shown in general formula (I-1) or general formula (I-2). This compound exhibits good stability and electronic tolerance, while also possessing excellent electron injection and electron transport capabilities. When used as an electron transport material in an organic electroluminescent device, the driving voltage of the device is significantly reduced, and the device lifetime is significantly improved, especially the high-temperature lifetime. General Formula (I-1) General Formula (I-2)

The present invention discloses a high-performance solar thermal storage material and a preparation method thereof. Through an electron activation mechanism, liquid metal is coupled with an active biomass sugar alcohol to obtain a binary coupling product with high heat storage capacity; through an electron transfer reaction, the above-mentioned binary coupling product is combined with a selenide semiconductor, and electrons are injected into the selenide semiconductor to obtain a ternary composite material with high heat storage capacity and high photothermal conversion capacity; through an interface adaptive conformation regulation mechanism, the above-mentioned ternary composite material is compounded with plasma carbon fiber to obtain a quaternary composite material with high heat storage capacity, high photothermal conversion capacity and high thermal conductivity. The present invention uses biomass sugar alcohol as the heat storage main body, liquid metal as the solid electron supply component, selenide semiconductor as the photothermal conversion component, and plasma carbon fiber as the heat conducting component. The prepared solar thermal storage material has the advantages of high heat storage capacity, high photothermal conversion capacity and high thermal conductivity.

Disclosed are a compound of Chemical Formula 1 and an organic light emitting device comprising the same. The compound described in the specification can be used as a material for an organic material layer of an organic light-emitting device. The compound according to at least one exemplary embodiment of the present specification may improve efficiency, achieve low driving voltage, and / or improve lifespan characteristics in an organic light emitting device. In particular, the compounds described in the specification can be used as materials for electron injection and transport layers. Further, an organic light-emitting device in which the compound described in the present specification is used has the effects of low driving voltage, high efficiency, and / or long lifespan compared to an existing organic light-emitting device.

Provided are an organic compound, an electroluminescent material and use thereof. The organic compound has a structure as shown in Formula I. Through the molecular structure design, the organic compound has a deep LUMO energy level, which can reduce electron injection potential barrier and improve electron injection ability; it has a deep HOMO, which can effectively block holes and make more electron-holes recombine in the light-emitting layer; it has a high triplet energy level ET1, which can effectively block light-emitting layer excitons. The molecule has a twisted spiro structure, which can reduce molecules stacking, avoid crystallization, show excellent thermal stability and film stability, and help improve luminous efficiency and lifetime. As electroluminescent materials, the organic compound is suitable for an electron transport layer and / or a hole blocking layer of OLED devices and can reduce voltage and power consumption, improve luminous efficiency and working lifetime to have better comprehensive performance.

The present specification relates to a compound represented by chemical formula 1, and an organic light-emitting element comprising the compound. The organic light-emitting element includes: a first electrode; a second electrode; and one or more organic material layers provided between the first electrode and the second electrode, wherein at least one of the organic material layers may comprise the compound represented by chemical formula 1. Specifically, the organic material layers comprise at least one layer among an electron transport layer, an electron injection layer, and an electron injection and transport layer, and at least one of the layers may include the compound represented by chemical formula 1.

The application discloses a compound containing triazine and phenanthrene structures and application thereof to an organic electroluminescent device, and belongs to the technical field of semiconductor materials. The compound has good stability and electron resistance, and has good electron injection and electron transmission capacity. When the compound is used as a material of the organic electroluminescent device, the driving voltage, the device efficiency and the device life of the device are significantly improved.

The invention relates to the technical field of manufacturing of deep ultraviolet semiconductor laser devices, in particular to a transverse-structure deep ultraviolet laser capable of promoting carrier injection and a preparation method of the transverse-structure deep ultraviolet laser. Comprising a substrate, a template layer, an n-type AlGaN contact layer, an n-AlN thin layer, an n-type AlGaN surrounding layer, a lower waveguide layer, a multi-quantum well layer, an upper waveguide layer, a p-type AlGaN surrounding layer, a p-type contact layer and a p-type metal electrode layer which are sequentially stacked from bottom to top. The surface of one side, far away from the template layer, of the n-type AlGaN contact layer is of a step-shaped structure; the step-shaped structure comprises a ridge surface and an independent step surface, the ridge surface bears the n-AlN thin layer, and the step surface is independently provided with an n-type metal electrode layer. The invention has the advantages that: heterojunction with different Al components is introduced into the n-type region and the p-type region of the device to generate two-dimensional electron gas, so that better electron injection and hole injection are realized, electron transmission paths are reduced, the joule heat of the device is reduced, the lasing threshold is greatly reduced, and the luminous power is improved.

A quantum dot light-emitting device, a preparation method thereof, and a display device, the quantum dot light-emitting device comprising: a quantum dot light-emitting layer; a carrier transport layer located at least one side of the quantum dot light-emitting layer; a monomolecular layer located between the carrier transport layer and the quantum dot light-emitting layer; wherein the material of the monomolecular layer is configured to transform the molecular configuration from a cis configuration to a trans configuration under visible light irradiation or heating conditions, and transform the molecular configuration from the trans configuration to the cis configuration under ultraviolet light irradiation conditions, and the molecular chain length of the trans configuration is greater than that of the cis configuration. The quantum dot light-emitting device of the present embodiment can achieve the effect of weakening electron injection and the effect of inhibiting the quenching of quantum dots by surface defects of inorganic metal oxide materials under light irradiation or heating conditions.