Optoelectronic component (100) comprising: a substrate (102); a first
electrode (104) disposed on the substrate (102) and having a first reflective surface (104a); a second
electrode (112) disposed above the first
electrode (104) and having a second reflective surface (112a), the second reflective surface (112a) and the first reflective surface (104a) being configured to form an
optical cavity; a first layer (106) comprising a first material disposed between the first reflective surface (104a) and the second reflective surface (112a); a second layer (108) comprising a second material disposed between the first layer (106) and the second reflective surface (112a), the second material being different from the first material; and a third layer (110) comprising a third material disposed between the first layer (106) and the second layer (108), the third material being different from the first material and the second material, wherein the second material has a highest occupied
molecular orbital (218-1) having a higher energy than the highest occupied
molecular orbital (220-1) of the third material, and a lowest unoccupied
molecular orbital (218-2) having a higher energy than the lowest unoccupied molecular orbital (220-2) of the third material, and the third material has a highest occupied molecular orbital (220-1) having a higher energy than the highest occupied molecular orbital (216-1) of the first material, and a lowest unoccupied molecular orbital (220-2) having a higher energy than the lowest unoccupied molecular orbital (216-2) of the first material; wherein the first material, the second material and the third material each comprise at least one organic material or a compound of at least one organic material and the energy levels of the first material, the second material and the third material are arranged such that when the optoelectronic component (100) is irradiated by means of an electromagnetic wave, -
charge carrier pairs consisting of a
charge carrier of a first type and a
charge carrier of a second type are generated in the third layer (110) by absorption of the electromagnetic wave in the third material, - the charge carrier pairs generated in the third layer (110) are separated at the interface of the third layer (110) to the first or second layer (106, 108), wherein • Charge carriers of the first type of a charge carrier pair generated in the third layer (110) are transferred from the third layer (110) to the first layer (106) when a charge carrier pair generated in the third layer (110) comes to the interface between the first layer (106) and the third layer (110); • the transfer of charge carriers of the second type of a charge carrier pair generated in the third layer (110) to the first layer (106) is prevented when a charge carrier pair generated in the third layer (110) comes to the interface between the first layer (106) and the third layer (110); • Charge carriers of the second type of a charge carrier pair generated in the third layer (110) are transferred from the third layer (110) to the second layer (108) when a charge carrier pair generated in the third layer (110) comes to the interface between the second layer (108) and the third layer (110); and • the transfer of charge carriers of the first type of a charge carrier pair generated in the third layer (110) to the second layer (108) is prevented when a charge carrier pair generated in the third layer (110) comes to the interface between the second layer (108) and the third layer (110); - the transferred charge carriers of the first type in the first layer (106) are transported to the first electrode (104), and - the transferred charge carriers of the second type in the second layer (108) are transported to the second electrode (112), wherein the third layer (110) consists of at least two individual parts of the third material, wherein the individual parts are spaced from each other by a gap, so that the third layer (110) is arranged as a non-closed layer, and wherein the third layer (110) is arranged such that it is located in a maximum of a
longitudinal mode of the electromagnetic wave when the optoelectronic component (100) is irradiated by means of the electromagnetic wave.