42139results about How to "High mechanical strength" patented technology

A light source apparatus which is improved in the efficiency of light emission thus to increase the operating life and the mechanical strength and a method of producing the same are provided. The light source apparatus 1 comprises a radiator plate 3 having thermally conductive properties, an insulating member 4 coupled to at least one side of the radiator plate 3 and having a through hole 6 provided in the side thereof facing the radiator plate 3, an LED chip 2 installed and thermally coupled to an exposed portion of the radiator plate 3 facing the through hole 6, an extension 4a inwardly projecting at the hole 6 from the radiator plate 3 end of the insulating member 4, a wiring pattern 8 provided on the insulating member 4 and electrically isolated by the insulating member 4 from the radiator plate 3, bonding wires 9 electrically connecting between portions of the wiring pattern 8 extended to the extension 4a and the electrodes of the LED chip 2, and a light-transmissive sealing material 10 filled in the through hole 6 for entirely encapsulating the LED chip 2 and the bonding wires 9.

A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound

A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C_αH_βX_γ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO₂ gas or H₂ gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

A prosthetic heart valve having an anchoring sleeve that changes shape when the valve is implanted and contacts the surrounding annulus to prevent migration of the valve. The heart valve may be non-expandable and the anchoring sleeve may provide the primary anchoring structure of the valve. Alternatively, the valve may be expandable wherein the anchoring sleeve supplements the inherent anchoring capacity of the valve structure. The anchoring sleeve is at least partly made of a material that increases in size, i.e., swells, due to absorption of body fluids. For instance, the anchoring sleeve may be formed of an inner material that swells upon contact with body fluids enclosed by a cover. The anchoring sleeve desirably changes shape to provide spaced apart annular flanges for securing the valve around a fibrous annulus. An anchoring sleeve for a prosthetic heart valve having an expandable frame surrounds a majority of the frame and may define an external hourglass configuration.

Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R₂N)_XSiR′_Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

The present invention provides systems and methods for embedding a filament or filament mesh in a three-dimensional structure, structural component, or structural electronic, electromagnetic or electromechanical component/device by providing at least a first layer of a substrate material, and embedding at least a portion of a filament or filament mesh within the first layer of the substrate material such the portion of the filament or filament mesh is substantially flush with a top surface of the first layer and a substrate material in a flowable state is displaced by the portion of the filament and does not substantially protrude above the top surface of the first layer, allowing the continuation of an additive manufacturing process above the embedded filament or filament mesh. A method is provided for creating interlayer mechanical or electrical attachments or connections using filaments within a three-dimensional structure, structural component, or structural electronic, electromagnetic or electromechanical component/device.

Methods of manufacturing polymeric intraluminal prostheses include annealing the polymeric material to selectively modify the crystallinity thereof. Annealing may be utilized to selectively modify various properties of the polymeric material of an intraluminal prosthesis, including: selectively increasing the modulus of the polymeric material; selectively increasing the hoop strength of the intraluminal prosthesis; selectively modifying the elution rate (increase or decrease) of a pharmacological agent subsequently disposed on or within the annealed polymeric material; selectively increasing/decreasing stress in the intraluminal prosthesis; and selectively modifying the polymeric material such that it erodes at a different rate.

A programmable resistor memory, such as a phase change memory, with a memory element comprising narrow vertical side wall active pins is described. The side wall active pins comprise a programmable resistive material, such as a phase change material. In a first aspect of the invention, a method of forming a memory cell is described which comprises forming a stack comprising a first electrode having a principal surface with a perimeter, an insulating layer overlying a portion of the principal surface of the first electrode, and a second electrode vertically separated from the first electrode and overlying the insulating layer. Side walls on the insulating layer and on the second electrode are positioned over the principle surface of the first electrode with a lateral offset from the perimeter of the first electrode.

Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 .mu.m ICs, or when copper is used as conductor in future ICs.

The invention discloses a microcapsule of an organic phase change energy storage material and a preparation method thereof. The microcapsule of an organic phase change energy storage material comprises a core and a nucleocapsid, wherein the material of the core comprises the organic phase change energy storage material; the nucleocapsid at least comprises an inner layer and an outer layer, the inner layer is packaged by any one of an in situ polymerization method, an interface polymerization method, a reaction phase separating method, a double agglomeration method and a sol-gal process, and the outer layer is packaged by any one of an in situ polymerization method, a reaction phase separating method, a sol-gal process and a double agglomeration method. The microcapsule has adjustable size, nucleocapsid composition and shell thickness, favorable flexibility, mechanical strength, penetrability resistance and dispersibility and can be widely applied to the fields of energy sources, materials, aero-space, textile, electric power, medical apparatus, architecture, and the like, such as solar utilization, industrial afterheat and waste heat recovery, architecture energy storage, dress with constant temperature, air conditioners for cool and heat accumulation, constant temperature of electric appliances, and the like.

A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

A shaving unit that comprises at least one blade and a skin engaging member that has a surface for engaging the user's skin adjacent the blade edge. The shaving unit may be of a disposable cartridge type adapted for coupling to and uncoupling from a razor handle or may be integral with a handle so that the complete razor is discarded as a unit when the blade or blades become dulled. The blade edge (or edges) cooperate with skin engaging surfaces to define a shaving geometry. The skin engaging member is comprised on an elongated sheath (or skin engaging layer) made of a mixture of water insoluble matrix and an effective amount of shaving aid and a rigid core (or non-skin engaging layer) extending axially through out said sheath. The axial position of the core need not be through the central axis.

Process, apparatus, compositions and application modes are provided that relate to nanofiber spinning without the use of superacids in the spinning solution. The methods employ either acids or bases for a flocculation solution. The advances disclosed therein enable the use of nanofibers, including carbon nanotubes, for a variety of applications including, but not limited to, electromechanical actuators, supercapacitors, electronic textiles, and in devices for electrical energy harvesting.

An apparatus and the method of its operation for rapid prototyping of a three-dimensional object which includes a radiant energy source of a wide beam of radiant energy of suitable intensity and wavelength for curing a layer of photo-curable resin contained in an open vat, a spatial light modulator (SLM) having an array of pixel elements which are individually digitally controllable by a computer, for modulating the radiant energy beam projected from the radiant energy source on a pixel by pixel basis, to form a series of time sequential images of the cross-sectional laminae of the object, an optical system for focusing each image formed by the SLM, one at a time, onto successive layers of photo-curable resin for predetermined exposure times to thereby form stacked laminae of cured resin, each lamina of cured resin being in the shape of a different one of the cross-sectional laminae, and a piston support for lowering each lamina of cured resin after it is formed by the SLM and for depositing a layer of resin corresponding to the thickness of one cross sectional lamina of the three-dimensional object before the step of projecting a new image by the SLM. The SLM, the piston support for lowering, and the optical system operate repeatedly and sequentially until a complete copy of the object is thereby produced.

A method for manufacturing a semiconductor device, including the steps of: forming a shielding film 38 on a first insulating film 37; sequentially forming a second insulating film 39 and an amorphous semiconductor film 40 on the shielding film 38; melting the amorphous semiconductor film 40 at least in portions to be channels of thin-film transistors by irradiating an energy beam onto the amorphous semiconductor film 40, and converting the amorphous semiconductor film 40 into a polycrystalline semiconductor film 41; sequentially forming a gate insulating film 43a and a gate electrode 44a on the polycrystalline semiconductor film 41 on the channels; and forming source and drain regions 41a in the polycrystalline semiconductor film 41 on sides of the gate electrode 44a, and forming a TFT 60 by use of the source and drain regions 41a, the gate insulating film 43a, and the gate electrode 44a.

The invention provides a method of treating of a well, a formation, or both, with the solids, liquids, or apparatuses, by 1) encasing said solids, liquids, or apparatuses in a water-soluble shell, 2) conveying said encased solids, liquids, or apparatuses to a predetermined location in the well, and then 3) allowing the water-soluble shell to dissolve in the aqueous phase in the wellbore. The shell is preferably made of water-soluble polyvinyl alcohol copolymers and a waterproofing agent. The shell encases a variety of solids, liquids, or combinations thereof, where said solids or liquids are useful in the treatment of the well or of the producing formation. Illustrative encased material includes soap, acid, corrosion inhibitors, chelating agents, scale inhibitors, mutual solvents, paraffin inhibitors, paraffin dissolvers, clay stabilizers, and tracer materials. The encased materials may also be apparatuses, such as a prefabricated screen completion or a prefabricated sand-pack. The tool used to deliver the apparatuses may also be made from a water-soluble polyvinyl alcohol copolymer.