42455results about How to "High mechanical strength" patented technology

The present invention provides a preparing method of carbon nanotube film structure, including following steps: providing a carbon nanotube array; adopting a pulling tool to acquire at least two carbon nanotube films from the carbon nanotube array; providing a fixed frame, forming a multiple-layer carbon nanotube film structure by overlap adhereing the carbon nanotube film in the fixed frame; and treating the multiple-layer carbon nanotube film by an organic solvent. The carbon nanotube film structure prepared by the method includes at least two layers overlapped and cross-over installed carbon nanotube film, which includes multiple carbon nanotube bundle end to end and arranged in the direction, the multiple-layer carbon nanotube film further includes millipore crosswise formed by multiple carbon nanotube bundles.

The present invention relates to a method of preparing a porous polymer scaffold for tissue engineering using a gel spinning molding technique. The method of the present invention can prepare a porous polymer scaffold having a uniform pore size, high interconnectivity between pores and mechanical strength, as well as high cell seeding and proliferation efficiencies, which can be effectively used in tissue engineering applications. Further, the method of the present invention can easily mold a porous polymer scaffold in various types such as a tube type favorable for regeneration of blood vessels, esophagus, nerves and the like, as well as a sheet type favorable for regeneration of skins, muscles and the like, by regulating the shape and size of a template shaft.

A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel.

A method for transporting a substrate using an end effector which mechanically clamps a periphery of the substrate includes: before transporting the substrate, depositing a compressive film only on, at, or in a bevel portion of the substrate; and transporting the substrate whose bevel portion is covered by the compressive film as the outermost film, using an end effector while mechanically clamping the periphery of the substrate.

A tempered glass substrate of the present invention is a tempered glass substrate, which has a compression stress layer on a surface thereof, and has a glass composition comprising, in terms of mass %, 40 to 71% of SiO2, 3 to 21% of Al2O3, 0 to 3.5% of Li2O, to 20% of Na2O, and 0 to 15% of K2O.

The present invention relates to composite solid polymer electrolyte membranes (SPEMs) which include a porous polymer substrate interpenetrated with a water soluble ion-conducting material. SPEMs of the present invention are useful in electrochemical applications, including fuel cells and electrodialysis.

A light source apparatus having a radiator plate having thermally conductive properties and an insulating member coupled to at least one side of the radiator plate having a through hole provided in a side thereof facing the radiator plate. The light source apparatus further including a LED chip installed and thermally coupled to an exposed portion of the radiator plate facing the through hole, an extension inwardly projecting at the through hole from the radiator plate end of the insulating member, and a wiring pattern provided on the insulating member electrically isolated by the insulating member from the radiator plate. The light source apparatus also including bonding wires electrically connecting portions of the wiring pattern on the extension and the electrodes of the LED chip, and a light-transmissive sealing material filling the through hole for entirely encapsulating the LED chip and the bonding wires.

A light emitting device, including a light emitting element, and a resin layer that has been screen printed to coat said light emitting element is provided. The resin layer is formed from a curable silicone resin composition, which includes (i) an organopolysiloxane with a polystyrene equivalent weight average molecular weight of at least 5×103, (ii) a condensation catalyst, (iii) a solvent, and (iv) a finely powdered inorganic filler. The uniformity of the film thickness is excellent, thus resulting in little color irregularities during light emission from the light emitting element.

A prosthetic heart valve having an anchoring sleeve that changes shape when the valve is implanted and contacts the surrounding annulus to prevent migration of the valve. The heart valve may be non-expandable and the anchoring sleeve may provide the primary anchoring structure of the valve. Alternatively, the valve may be expandable wherein the anchoring sleeve supplements the inherent anchoring capacity of the valve structure. The anchoring sleeve is at least partly made of a material that increases in size, i.e., swells, due to absorption of body fluids. For instance, the anchoring sleeve may be formed of an inner material that swells upon contact with body fluids enclosed by a cover. The anchoring sleeve desirably changes shape to provide spaced apart annular flanges for securing the valve around a fibrous annulus. An anchoring sleeve for a prosthetic heart valve having an expandable frame surrounds a majority of the frame and may define an external hourglass configuration.

A method for manufacturing a semiconductor device, including the steps of: forming a shielding film 38 on a first insulating film 37; sequentially forming a second insulating film 39 and an amorphous semiconductor film 40 on the shielding film 38; melting the amorphous semiconductor film 40 at least in portions to be channels of thin-film transistors by irradiating an energy beam onto the amorphous semiconductor film 40, and converting the amorphous semiconductor film 40 into a polycrystalline semiconductor film 41; sequentially forming a gate insulating film 43a and a gate electrode 44a on the polycrystalline semiconductor film 41 on the channels; and forming source and drain regions 41a in the polycrystalline semiconductor film 41 on sides of the gate electrode 44a, and forming a TFT 60 by use of the source and drain regions 41a, the gate insulating film 43a, and the gate electrode 44a.

An electromagnetic surgical ablation probe having a coaxial feedline and cooling chamber is disclosed. The disclosed probe includes a dipole antenna arrangement having a radiating section, a distal tip coupled to a distal end of the radiating section, and a ring-like balun short) or choke, which may control a radiation pattern of the probe. A conductive tube disposed coaxially around the balun short includes at least one fluid conduit which provides coolant, such as dionized water, to a cooling chamber defined within the probe. A radiofrequency transparent catheter forms an outer surface of the probe and may include a lubricious coating.

The invention discloses general electronic paste based on graphene filler. The electronic paste contains graphene-containing conductive filler, an organic carrier, a solvent and an auxiliary agent. Because the graphene has good electronic conductivity and a unique two-dimensional laminar nano structure, the graphene forms a conductive network in the organic carrier more easily, and the electric conductivity of the electronic paste is improved by adding the graphene. Further, the conductive filler also contains a conductive material with relatively high electric conductivity, so that the electric conductivity of the electronic paste is further improved. Because the graphene and the conductive material are compounded to form the conductive filler, the electronic paste has good electric conductivity. The electronic paste can obtain a relatively wide electric conductivity range by changing the category of the conductive material mixed with the graphene and adjusting the relative proportion of the graphene to the conductive material of different category. The electric conductivity of the electronic paste is 1*10<-3>S / cm to 1*10<3>S / cm. The paste can be widely applied, and can be particularly used as a conductive coating or adhesive.

Methods of forming chemical casings include drilling a well bore with a drilling fluid having a pH in the range of from about 6 to 10 and comprising water, a water soluble or water dispersible polymer which is capable of being cross-linked by a thermoset resin and causing the resin to be hard and tough when cured, a particulate curable solid thermoset resin, a water soluble or dispersible thermoset resin, and a delayed dispersible acid-catalyst for curing the solid thermoset resin and the water soluble thermoset resin, whereby the drilling fluid forms a filter cake on the walls of the wellbore that cures into a hard and tough cross-linked chemical casing thereon.

An integrated circuit is formed on a flexible substrate by using an amorphous semiconductor thin film, or a polycrystalline or a monocrystalline semiconductor thin film crystallized by laser annealing. A plurality of such flexible integrated circuit boards and mounted on a separate support substrate. This can enhance the mechanical strength of devices, such as an IC card and a liquid crystal display, and allow those devices to be manufactured at a low cost. It is also possible to provide a semiconductor device with a higher performance, on which a flexible integrated circuit board and an IC chip made from a silicon and / or glass wafer. Adhering a film substrate having a high thermal conductivity, such as a metal, to the bottom side of the flexible integrated circuit board improves the heat discharging characteristic of the integrated circuit and suppress the problem of self-heating.