A semiconductor processing member is provided, including a body and a plasma spray coating provided on the body. The coating is an ABO or ABCO complex oxide solid solution composition, where A, B and C are selected from the group consisting of La, Zr, Ce, Gd, Y, Yb and Si, and O is an oxide. The coating imparts both chlorine and fluorine plasma erosion resistance, reduces particle generation during plasma etching, and prevents spalling of the coating during wet cleaning of the semiconductor processing member.