The invention belongs to the technical field of ferroelectric materials, and particularly relates to a Sr0. 4Na0. 2NbO3 doped Bi0. 5Na0. 5TiO3 (BNT) based ferroelectric film and a preparation method of the Sr0. 4Na0. 2NbO3 based ferroelectric film. A modified
sodium bismuth titanate Bi0. 5Na0. 5TiO3 (BNT)-based material is doped with A / B site elements, Sr0. 4Na0. 2NbO3 with a
tungsten bronze structure is selected as a
doping component, the
chemical composition is (0.94-x) Bi0. 5Na0. 5Na0. 2NbO3, the
doping amount of the Sr0. 4Na0. 2NbO3 is 0.01-0.1, the
doping amount of the Sr0. 4Na0. 2NbO3 is 0.01-0.1, and 1 mol% of
manganese is additionally doped on the basis of the Sr0. 4Na0. 2NbO3. The lead-free ferroelectric film is prepared by a
sol-
gel method. The breakdown resistance (Eb) and recoverable
energy storage density (Wrec) of the
sodium bismuth titanate-based lead-free ferroelectric film prepared according to the invention are remarkably improved, compared with an undoped sample, the Eb is improved by 56%, the maximum polarization intensity (Pmax) reaches 102.4 [mu] C / cm < 2 >, and the Wrec is improved from 94.11 J / cm < 3 > to 128.82 J / cm < 3 > and improved by 37%.