A device integration method and integrated device. The method may include the steps of directly bonding a
semiconductor device having a substrate to an element; and removing a portion of the substrate to
expose a remaining portion of the
semiconductor device after bonding. The element may include one of a substrate used for thermal spreading,
impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the
semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the
semiconductor device, vias may be formed through the
semiconductor device to device regions, and
interconnection may be formed between said device regions and said contact structures.