4557 results about "Memory control" patented technology

A multi-display system includes a host system that supports both graphics and video based frames for multiple remote displays, multiple users or a combination of the two. For each display and for each frame, a multi-display processor responsively manages each necessary aspect of the remote display frame. The necessary portions of the remote display frame are further processed, encoded and where necessary, transmitted over a network to the remote display for each user. In some embodiments, the host system manages a remote desktop protocol and can still transmit encoded video or encoded frame information where the encoded video may be generated within the host system or provided from an external program source. Embodiments integrate the multi-display processor with either the video decoder unit, graphics processing unit, network controller, main memory controller, or any combination thereof The encoding process is optimized for network traffic and attention is paid to assure that all users have low latency interactive capabilities.

A non-volatile memory system of a type having blocks of memory cells erased together and which are programmable from an erased state in units of a large number of pages per block. If the data of only a few pages of a block are to be updated, the updated pages are written into another block provided for this purpose. Updated pages from multiple blocks are programmed into this other block in an order that does not necessarily correspond with their original address offsets. The valid original and updated data are then combined at a later time, when doing so does not impact on the performance of the memory. If the data of a large number of pages of a block are to be updated, however, the updated pages are written into an unused erased block and the unchanged pages are also written to the same unused block. By handling the updating of a few pages differently, memory performance is improved when small updates are being made. The memory controller can dynamically create and operate these other blocks in response to usage by the host of the memory system.

Each of stacked memory chips has an ID generator circuit for generating identification information in accordance with its manufacturing process. Since the memory chip manufacturing process implies process variations, the IDs generated by the respective ID generator circuits are different from one another even though the ID generator circuits are identical in design. A memory controller instructs an ID detector circuit to detect the IDs of the respective memory chips, and individually controls the respective memory chips based on the detected IDs.

An information storage system includes a bonded semiconductor structure having a memory circuit region carried by an interconnect region. The memory circuit region includes a memory control device region having a vertically oriented memory control device. The memory circuit region includes a memory device region in communication with the memory control device region. The memory device region includes a memory device whose operation is controlled by the vertically oriented memory control device.

A memory device and method, such as a flash memory device and method, includes a memory having a plurality of nonvolatile memory cells for storing stored values of user data. The memory device and method includes a memory controller for controlling the memory. The memory controller includes an encoder for encoding user write data for storage of code values as the stored values in the memory. The encoder includes an inserter for insertion of an indicator as part of the stored values for use in determining when the stored values are or are not in an erased state. The memory controller includes a decoder for reading the stored values from the memory to form user read data values when the stored values are not in the erased state.

A memory system includes a plurality of nonvolatile memory chips (CHP1 and CHP2) each having a plurality of memory banks (BNK1 and BNK2) which can perform a memory operation independent of each other and a memory controller (5) which can control to access each of said nonvolatile memory chips. The memory controller can selectively instruct either a simultaneous writing operation or an interleave writing operation on a plurality of memory banks of the nonvolatile memory chips. Therefore, in the simultaneous writing operation, the writing operation which is much longer than the write setup time can be performed perfectly in parallel. In the interleave writing operation, the writing operation following the write setup can be performed so as to partially overlap the writing operation on another memory bank. As a result, the number of nonvolatile memory chips constructing the memory system of the high-speed writing operation can be made relatively small.

Controlled localized defect paths for resistive memories are described, including a method for forming controlled localized defect paths including forming a first electrode forming a metal oxide layer on the first electrode, masking the metal oxide to create exposed regions and concealed regions of a surface of the metal oxide, and altering the exposed regions of the metal oxide to create localized defect paths beneath the exposed regions.

A methodology for a daisy-chained memory topology wherein, in addition to the prediction of the timing of receipt of a response from a memory module (DIMM), the memory controller can effectively predict when a command sent by it will be executed by the addressee DIMM. By programming DIMM-specific command delay in the DIMM's command delay unit, the command delay balancing methodology according to the present disclosure “normalizes” or “synchronizes” the execution of the command signal across all DIMMs in the memory channel. With such ability to predict command execution timing, the memory controller can efficiently control power profile of all the DRAM devices (or memory modules) on a daisy-chained memory channel. A separate DIMM-specific response delay unit in the DIMM may also be programmed to provide DIMM-specific delay compensation in the response path, further allowing the memory controller to accurately ascertain the timing of receipt of a response thereat, and, hence, to better manage further processing of the response.

A computer system includes a processor coupled to a DRAM through a memory controller. The processor switches the DRAM to a low power refresh mode in which DRAM cells are refreshed at a sufficiently low rate that data retention errors may occur. Prior to switching the DRAM to the low power refresh mode, the processor identifies a region of an array of DRAM cells that contains essential data that needs to be protected from such data retention errors. The processor then reads data from the identified region, and either the DRAM or the memory controller generates error checking and correcting syndromes from the read data. The syndromes are stored in the DRAM, and the low power refresh mode is then entered. Upon exiting the low power refresh mode, the processor again reads the data from the identified region, and the read data is checked and corrected using the syndromes.

A memory controller is provided. The memory controller includes an initiator block configured to arbitrate requests corresponding to data from multiple ports. The initiator block includes an arbitration module configured to consider a latency factor and a bandwidth factor associated with the data from a port to be selected for processing. A state machine is in communication with the arbitration module. The state machine is configured to generate a signal to the arbitration module that is configured to select the data associated with the port based upon the latency factor and the bandwidth factor. Task status and completion circuitry configured to calculate the bandwidth factor based upon previous data selected from the port is included in the initiator block. The task status and completion circuitry is further configured to transmit the calculated bandwidth factor to the state machine. A method for arbitrating across multiple ports is also provided.

A memory module includes a plurality of memory devices and a circuit. Each memory device has a corresponding load. The circuit is electrically coupled to the plurality of memory devices and is configured to be electrically coupled to a memory controller of a computer system. The circuit selectively isolates one or more of the loads of the memory devices from the computer system. The circuit comprises logic which translates between a system memory domain of the computer system and a physical memory domain of the memory module.

A computer system is disclosed including a printed circuit board (PCB) including a plurality of traces, at least one processor mounted to the PCB to couple to some of the plurality of traces, a heterogeneous memory channel including a plurality of sockets coupled to a memory channel bus of the PCB, and a memory controller coupled between the at least one processor and the heterogeneous memory channel. The heterogeneous memory channel includes a plurality of sockets coupled to a memory channel bus of the PCB. The plurality of sockets are configured to receive a plurality of different types of memory modules. The memory controller may be a programmable heterogeneous memory controller to flexibly adapt to the memory channel bus to control access to each of the different types of memory modules in the heterogeneous memory channel.

An address at which a writing error occurs is held, and after a completion of a series of writings, the data of the held address is read. Then, a faulty-block processing is performed only for the addresses, for which it is determined that retry of writing is required, thereby preventing an increase of faulty-blocks. This can suppress the problem that when a writing is performed in a particular flash memory, a writing error frequently occurs and a large number of faulty blocks occur.

In an embodiment, an input/output (I/O) memory management unit (IOMMU) comprises at least one memory configured to store translation data; and control logic coupled to the memory and configured to translate an I/O device-generated memory request using the translation data. The translation data corresponds to one or more device table entries in a device table stored in a memory system of a computer system that includes the IOMMU, wherein the device table entry for a given request is selected by an identifier corresponding to the I/O device that generates the request. The translation data further corresponds to one or more I/O page tables, wherein the selected device table entry for the given request includes a pointer to a set of I/O page tables to be used to translate the given request.

A system and method to reduce standby currents in input buffers in an electronic device (e.g., a memory device) is disclosed. The input buffers may be activated or deactivated by the state of a chip select (CS) signal. In case of a memory device, the active and precharge standby currents in memory input buffers may be reduced by turning off the input buffers when the CS signal is in an inactive state. A memory controller may supply the CS signal to the memory device at least one clock cycle earlier than other control signals including the RAS (row address strobe) signal, the CAS (column address strobe) signal, the WE (write enable) signal, etc. A modified I/O circuit in the memory device may internally delay the CS signal by at least one clock cycle to coincide its timing with the RAS/CAS signals for normal data access operation whereas the turning on/off of the memory input buffers may be performed by the CS signal received from the memory controller on the previous cycle. Thus, activation and deactivation of memory input buffers may be performed without forcing the memory device into power down mode and without employing complex circuits for power management. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

A computer memory system having a three-level memory hierarchy structure is disclosed. The system includes a memory controller, a volatile memory, and a non-volatile memory. The volatile memory is divided into an uncompressed data region and a compressed data region.

One embodiment of the present invention provides a system that reduces the number of power and ground pins required to drive address signals to system memory. During operation, the system receives address signals associated with a memory operation from a memory controller, wherein the address signals are received at a buffer chip, which is external the memory controller. The system also receives chip select signals associated with the memory operation at the buffer chip. Next, the system uses the chip select signals to identify an active subset of memory modules in the system memory, which are active during the memory operation. The system then uses address drivers on the buffer chip to drive the address signals only to the active subset of memory modules, and not to other memory modules in the system memory. In this way, the buffer chip requires fewer power and ground pins for the address drivers because the address signals are only driven to the active subset of memory modules, instead of being driven to all memory modules in the system memory.