1091 results about "Memory operation" patented technology

A storage subsystem includes a charge pump that receives a power signal from a host system, and generates a regulated power signal that is provided to the storage subsystem's controller. When the power signal from the host is interrupted, the charge pump additionally acts as a backup power supply to enable the storage subsystem to continue to operate temporarily, and power isolation circuitry in the storage subsystem prevents power from flowing back to the host system. The storage subsystem further includes a digitally programmable voltage detection circuit that accepts various supply voltages and asserts a busy signal to the controller when an anomaly in the power signal is detected. The controller includes logic circuitry that will block the host system from performing write operations to the storage subsystem either when the voltage detection circuit asserts a busy signal or when the controller is busy executing memory operation commands.

A storage subsystem implements a background process for selecting voltage reference values to use for reading data from a non-volatile memory array, such as an array of multi-level cell (MLC) flash memory. The process involves performing background read operations using specific sets of voltage reference values while monitoring the resulting bit error counts. The selected voltage reference values for specific pages or other blocks of the array are stored in a table. Read operations requested by a host system are executed using the corresponding voltage reference values specified by the table.

A memory system includes a plurality of nonvolatile memory chips (CHP1 and CHP2) each having a plurality of memory banks (BNK1 and BNK2) which can perform a memory operation independent of each other and a memory controller (5) which can control to access each of said nonvolatile memory chips. The memory controller can selectively instruct either a simultaneous writing operation or an interleave writing operation on a plurality of memory banks of the nonvolatile memory chips. Therefore, in the simultaneous writing operation, the writing operation which is much longer than the write setup time can be performed perfectly in parallel. In the interleave writing operation, the writing operation following the write setup can be performed so as to partially overlap the writing operation on another memory bank. As a result, the number of nonvolatile memory chips constructing the memory system of the high-speed writing operation can be made relatively small.

A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.

A non-volatile storage subsystem regulates energy consumption by controlling or “throttling” the rate at which memory operations are performed. During relatively idle periods in which few or no memory operations are performed, energy allotments or “counts” are accumulated to reflect unused energy. These accumulated energy counts may then be effectively allocated for use during bursts or other periods of relatively heavy memory activity, such that the memory operations are performed at a relatively high rate without causing a maximum average power consumption to be exceeded.

A system and method for performing memory operations in a multi-plane flash memory. Commands and addresses are sequentially provided to the memory for memory operations in memory planes. The memory operations are sequentially initiated and the memory operation for at least one of the memory planes is initiated during the memory operation for another memory plane. In one embodiment, each of a plurality of programming circuits is associated with a respective memory plane and is operable to program data to the respective memory plane in response to programming signals and when it is enabled. Control logic coupled to the plurality of programming circuits generates programming signals in response to the memory receiving program commands and further generates programming enable signals to individually enable each of the programming circuits to respond to the programming signals and stagger programming of data to each of the memory planes.

One embodiment of the present invention provides a system that reduces the number of power and ground pins required to drive address signals to system memory. During operation, the system receives address signals associated with a memory operation from a memory controller, wherein the address signals are received at a buffer chip, which is external the memory controller. The system also receives chip select signals associated with the memory operation at the buffer chip. Next, the system uses the chip select signals to identify an active subset of memory modules in the system memory, which are active during the memory operation. The system then uses address drivers on the buffer chip to drive the address signals only to the active subset of memory modules, and not to other memory modules in the system memory. In this way, the buffer chip requires fewer power and ground pins for the address drivers because the address signals are only driven to the active subset of memory modules, instead of being driven to all memory modules in the system memory.

There are many inventions described herein as well as many aspects and embodiments of those inventions, for example, circuitry and techniques for reading, writing and/or operating a semiconductor memory cells of a memory cell array, including electrically floating body transistors in which an electrical charge is stored in the body of the transistor. In one aspect, the present inventions are directed to one or more independently controllable parameters of a memory operation (for example, restore, write, refresh), to program or write a data state into a memory cell. In one embodiment, the parameter is the amount of time of programming or writing a predetermined data state into a memory cell. In another embodiment, the controllable parameter is the amplitude of the voltage of the control signals applied to the gate, drain region and/or source region during programming or writing a predetermined data state into a memory cell. Indeed, the controllable parameters may be both temporal and voltage amplitude. Notably, the memory cell array may comprise a portion of an integrated circuit device, for example, logic device (for example, a microprocessor) or a portion of a memory device (for example, a discrete memory).

Peripheral devices store data in non-volatile phase-change memory (PCM). PCM cells have alloy resistors with high-resistance amorphous states and low-resistance crystalline states. The peripheral device can be a Multi-Media Card/Secure Digital (MMC/SD) card. A PCM controller accesses PCM memory devices. Various routines that execute on a CPU in the PCM controller are activated in response to commands in the host-bus transactions. The PCM system increases the throughput of one or more phase-change memory devices by performing one or more of a read-ahead memory operation, a write-ahead memory write operation, a larger page memory write operation, a wider data bus memory write operation, a multi-channel concurrent multi-bank interleaving memory read or write operation, a write-cache memory write operation, and any combination thereof.

An improved Flash memory device with a distributed erase block management (EBM) scheme is detailed that enhances operation and helps minimize write fatigue of the floating gate memory cells of the Flash memory device. In the prior art, erase block management of a Flash memory device, which provides logical sector to physical sector mapping and provides a virtual rewriteable interface for the host, requires that erase block management data be kept in specialized EBM data tables to keep the state of the Flash memory device in case of loss of power. This placement of EBM data in a separate erase block location from the user data slows the Flash memory operation by requiring up to two writes and/or block erasures for every update of the user data. Additionally, one of the goals of the EBM control is to minimize write fatigue of the non-volatile floating gate memory cells of the Flash memory device erase blocks by re-mapping and distributing heavily rewritten user data sectors in a process called load leveling so that no one erase block gets overused too quickly and reduce the expected lifespan of the Flash memory device. The EBM data structures, however, are some of the most heavily rewritten non-volatile floating gate memory cells in the device and thus, while helping to reduce write fatigue in the Flash memory device, are some of the data structures most susceptible to the process of fatigue. The Flash memory device of the invention combines the EBM data in a user data erase block by placing it in an EBM data field of the control data section of the erase block sectors. Therefore distributing the EBM data within the Flash memory erase block structure. This allows the Flash memory to update and/or erase the user data and the EBM data in a single operation, to reduce overhead and speed operation. The Flash memory also reduces the process of EBM data structure write fatigue by allowing the EBM data fields to be load leveled by rotating them with the erase blocks they describe.

When a processor executes a memory operation instruction by means of data dependence speculative execution, a speculative execution result history table which stores history information concerning success/failure results of the speculative execution of memory operation instructions of the past is referred to and thereby whether the speculative execution will succeed or fail is predicted. In the prediction, the target address of the memory operation instruction is converted by a hash function circuit into an entry number of the speculative execution result history table (allowing the existence of aliases), and an entry of the table designated by the entry number is referred to. If the prediction is “success”, the memory operation instruction is executed in out-of-order execution speculatively (with regard to data dependence relationship between the instructions). If the prediction is “failure”, the speculative execution is canceled and the memory operation instruction is executed later in the program order non-speculatively. Whether the speculative execution of the memory operation instructions has succeeded or failed is judged by detecting the data dependence relationship between the memory operation instructions, and the speculative execution result history table is updated taking the judgment into account.

A method to trace a variable or other expression through a computer program is disclosed. A user determines the variable and the conditions upon which activity of the variable will be monitored. As a result of the invention, every time that variable is referenced in a memory operation or other activity by the program and the conditions set forth by the user are satisfied, the state of that variable is saved as a snapshot without interrupting or stopping execution of the program. The snapshots are accumulated in a history table. The history table can be retrieved and the state of the variable in any given snapshot can be restored. Other variables and expressions can be attached to the trigger variable and the states of these other variables at the time of the activity of the trigger variable may also be saved in the snapshot. The method may be incorporated into a program as a tracing device or a program product separate from the logical processing device executing the program.

A memory management and control system that is selectable at the application level by an application programmer is provided. The memory management and control system is based on the use of policy modules. Policy modules are used to specify and control different aspects of memory operations in NUMA computer systems, including how memory is managed for processes running in NUMA computer systems. Preferably, each policy module comprises a plurality of methods that are used to control a variety of memory operations. Such memory operations typically include initial memory placement, memory page size, a migration policy, a replication policy and a paging policy. One method typically contained in policy modules is an initial placement policy. Placement policies may be based on two abstractions of physical memory nodes. These two abstractions are referred to herein as "Memory Locality Domains" (MLDs) and "Memory Locality Domain Sets" (MLDSETs). By specifying MLDs and MLDSETs, rather than physical memory nodes, application programs can be executed on different computer systems regardless of the particular node configuration and physical node topology employed by the system. Further, such application programs can be run on different machines without the need for code modification and/or re-compiling.

An information processing system which self-detects a change in the actual performance of memory elements due to mounting positions, change in environment, and aging changes to enable the memory elements to stably operate at the highest possible performance without shutting down the system. For implementing an optimal memory access for each of memory elements mounted in a memory unit, a memory controller is provided with a memory timing table which stores operation timings corresponding to the respective memory elements. The timing table is updated in response to an instruction from an apparatus for monitoring the memory operation, and the updated table is applied to a processing request after the update instruction. The apparatus for monitoring the memory operation includes an environmental sensor disposed around the memory elements, a counter for accumulating error information which is generated each time the memory unit is accessed, and so on.

A method, circuit, and system are disclosed. In one embodiment, the method comprises designating a contiguous portion of the physical memory in one or more dual in-line memory modules (DIMMs) to be powered down, locking the designated portion of memory to halt memory operations between the memory and any device that requests access to the designated portion of memory, relocating any data currently residing in the designated portion of the one or more DIMMs to one or more locations in the non-designated portion of the one or more DIMMs, and powering down the designated portion of the one or more DIMMs.

Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell.

Multi-level cell (MLC) flash memory has become widely used due to their capacity to store more information in the same area as a single-level cell (SLC) flash memory. This makes MLC flash memory very attractive for storing media. Flash has also traditionally been used in electronic devices for firmware, but MLC flash is less reliable than SLC flash. For critical memory operations, MLC flash memory can be made as reliable as SLC flash by mapping one binary value to an MLC state corresponding to the highest threshold voltage and the other binary value to the MLC state corresponding the lowest threshold voltage when writing to the MLC flash, and by mapping all MLC states with corresponding threshold voltages above a central cutoff threshold voltage to one binary value and by mapping all MLC states with corresponding threshold voltages below a central cutoff threshold voltage to the other binary value.

In one embodiment, an input/output memory management unit (IOMMU) comprises a control register configured to store a base address of a set of translation tables and control logic coupled to the control register. The control logic is configured to respond to an input/output (I/O) device-initiated request having an address within an address range of an address space corresponding to a peripheral interconnect. One or more operations other than a memory operation are associated with the address range, and the control logic is configured to translate the address to a second address outside of the address range if the translation tables specify a translation from the address to the second address, whereby a memory operation is performed in response to the request instead of the one or more operations associated with the address range.