33488 results about "Diode" patented technology

An optical physiological sensor can be integrated into a wearable device and can comprise a substrate having an optical center, a first emitter group of light emitting diodes (LEDs) positioned adjacent to the optical center of the substrate and spaced at an offset from the optical center, a second emitter group of LEDs positioned adjacent to the optical center of the substrate at an offset to the optical center and spaced at an offset from the optical center opposite the first emitter group of LEDs relative to the optical center, and a plurality of detectors arranged in a spatial configuration that surrounds the first and the second emitter group. Each of the plurality of detectors can be positioned on the substrate a same distance away from the optical center of the substrate.

A direct current (DC) fast charger for charging a battery of an electric vehicle (EV) includes a primary circuit having seven bidirectional switches electrically linked to a primary wire of a transformer and configured to receive an alternating current (AC) voltage; and a secondary circuit comprising a plurality of diodes arranged to rectify the AC voltage into a DC voltage, electrically linked to the secondary leads of the transformer such that the DC fast charger unidirectionally converts the AC voltage received at the primary circuit into the DC voltage output by the secondary circuit.

The invention relates to a backside illuminated image sensor and a preparation method thereof, and electronic equipment, and relates to the technical field of integrated circuits, the backside illuminated image sensor comprises a substrate, and photodiodes and laminated isolation structures which are located on the substrate, are alternately arranged along a first direction parallel to the surface of the substrate, and extend along the direction towards the substrate. The photodiode comprises an isolation layer, a first photosensitive layer, a second photosensitive layer and a third photosensitive layer which are sequentially stacked in the direction away from the substrate. The first photosensitive layer internally comprises a plurality of first SiP layers arranged at intervals in the first direction, and the first SiP layers penetrate through the first photosensitive layer in the second direction and extend to the isolation layer. And the third photosensitive layer internally comprises a plurality of second SiP layers which are arranged at intervals along the first direction, and the plurality of second SiP layers penetrate through the third photosensitive layer along the second direction and extend to the second photosensitive layer, so that the number of photon-generated carriers can be increased, and the quantum efficiency of the device can be improved.

The invention relates to a backside illuminated image sensor, a preparation method thereof and electronic equipment. The backside illuminated image sensor comprises a substrate, a grating, photodiodes and target isolation structures, wherein the photodiodes and the target isolation structures are located on the first surface of the substrate, are alternately arranged in the first direction parallel to the first surface and extend towards the substrate; the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures and the target isolation structures over the trench isolation structures are arranged in a one-to-one manner; the photodiode comprises a SiAs laminated layer and a SiAs cover layer which are arranged along a direction away from the substrate, and a SiP layer which penetrates through the SiAs laminated layer along a first direction and a direction towards the substrate; the target isolation structure comprises a protruding part higher than the top surface of the photodiode; the grating and the protruding parts are prepared in the same process step at the same period. Signal crosstalk of the BSI image sensor and unnecessary damage caused by IMP can be avoided, and photoelectric conversion efficiency can be improved.

The invention relates to the field of high-voltage direct-current power transmission, and aims to provide an MMC converter valve and method for realizing alternating-current and direct-current fault ride-through based on an energy consumption sub-module. On the basis of a topological structure of a conventional MMC converter valve, M energy consumption sub-modules which are sequentially connected in series and are the same in structure are arranged between a bridge arm inductor of each bridge arm and the midpoint of an upper bridge arm and the midpoint of a lower bridge arm, and each energy consumption sub-module comprises a main through-flow branch, an energy consumption branch and a bypass loop which are connected in parallel; in the main through-current branch, the half-controlled switching device T1 is reversely connected in parallel with a fly-wheel diode D1 of the half-controlled switching device T1, and then is reversely connected in series with the full-controlled switching device T2 and a reverse fly-wheel diode D2 of the full-controlled switching device T2; the energy consumption branch comprises an energy consumption resistor Rd, and the bypass branch comprises a bypass switch K. According to the invention, alternating current fault ride-through and direct current fault ride-through are integrated into the topology of the MMC converter valve, so that the integration level of the protection scheme is improved; voltage fluctuation during alternating-current fault ride-through can be effectively smoothed, and the stability during alternating-current fault ride-through is improved.

The invention relates to the technical field of intelligent lighting, and discloses a light emitting diode intelligent dimming system based on multispectral control, which comprises a multi-sensor data acquisition module, a data fusion processing unit, a user behavior prediction module, a dynamic spectrum adjustment module and the like. Environmental data are collected in real time through multiple sensors, user behaviors are predicted in combination with a machine learning algorithm, and personalized adjustment and dynamic response of illumination are achieved. The system can accurately adjust the color temperature, brightness and spectral distribution of the light source according to the changes of ambient light, temperature and humidity, human body activities and the like, and provides a more efficient and energy-saving illumination scheme. Meanwhile, through cooperative work of the Internet of Things technology and intelligent equipment, the comfort level of the whole environment is optimized. Particularly, the intelligent feedback and learning module of the system continuously optimizes the control strategy according to the use feedback of the user, the user experience and the adaptability of the system are further improved, and a comfortable and intelligent lighting environment is provided for the user.

The invention relates to a backside illuminated image sensor and a preparation method thereof, and electronic equipment, and relates to the technical field of integrated circuits, the backside illuminated image sensor comprises a substrate, and photodiodes and laminated target isolation structures which are located on a first surface of the substrate, are alternately arranged along a first direction parallel to the first surface, and extend towards the substrate; the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures and the laminated target isolation structures right above the trench isolation structures are arranged in a one-to-one manner; the laminated target isolation structure comprises isolation parts and insulation parts which are sequentially and alternately laminated along a second direction deviating from the substrate; the photodiode comprises at least two photosensitive layers which are sequentially stacked in the second direction, the longitudinal sections of the photosensitive layers are T-shaped, one photosensitive layer makes contact with the first surface of the substrate, substrate damage caused by ion implantation can be avoided, and meanwhile the photoelectric conversion efficiency and the quantum efficiency are improved.

Radiating elements comprise a first dipole radiator that includes a first dipole arm and a second dipole arm, a second dipole radiator that includes a third dipole arm and a fourth dipole arm and first through fourth electromagnetic bandgap structures that are coupled to distal end portions of the respective first through fourth dipole arms.

There is provided an electric shaver having (a) a main body that includes a shaver head and a first pair of contacts through which a first voltage is provided, and (b) a cap that is installable on the main body in a first orientation or a second orientation, and when installed on the main body covers the shaver head. The cap has (1) a second pair of contacts that engage the first pair of contacts when the cap is installed on the main body, to receive the first voltage, and (2) a circuit having (i) a diode bridge that receives the first voltage via the second pair of contacts, and provides a second voltage of proper polarity for utilization by other components of the circuit, and (ii) an ultraviolet (UV) light source that utilizes the second voltage, and when ON, emits UV light that irradiates the shaver head.

Embodiments provided herein generally include apparatus, plasma processing systems and methods for tuning in a radio frequency (RF) plasma processing system for improving substrate processing metrics. Some embodiments are directed to an apparatus for processing a substrate in a plasma processing system. The apparatus generally includes: an impedance for a match circuit configured to perform impedance matching for a plasma load; a diode-based switch coupled to the impedance for the match circuit; at least one signal generator coupled to the diode-based switch and configured to bias the diode-based switch to a first position based on a first impedance generated in the plasma load; and a second position based on a second impedance generated in the plasma load and an RF signal generator configured to provide an RF signal to the plasma load.

The present disclosure comprises: a semiconductor switch unit including a first semiconductor switch having a drain terminal connected to a power grid, a second semiconductor switch having a drain terminal connected to a load, and first and second diodes each having a positive electrode and a negative electrode respectively connected to a source terminal and the drain terminal of each semiconductor switch; a bypass circuit which connects the drain terminal of the first semiconductor switch to the source terminal of the second semiconductor switch; and a control unit which, when the power grid is connected to the semiconductor circuit breaker, supplies a current to the load through the bypass circuit and the second diode by closing the bypass circuit while the first and second semiconductor switches are turned off, and which, when preset conditions are met, turns on the first and second semiconductor switches so as to open the bypass circuit so that a current is supplied to the load through the semiconductor switch unit.

The invention relates to the technical field of mine safety, and discloses a coal mine underground gas monitoring method and system. The method comprises the following steps: acquiring methane absorption intensity data by adopting a tunable diode laser absorption spectrum, converting the methane absorption intensity data into gas concentration based on a Lambert-Beer law, performing temperature and humidity compensation, calculating a transmission priority according to concentration deviation to form a data packet, and establishing a spatial interpolation model by utilizing multipoint data to predict gas concentration distribution. Calculating a risk assessment index based on the predicted distribution, automatically adjusting the rotating speed of the ventilator, and controlling the electrical equipment to be powered off. According to the method, the technical problems of low detection precision, incomplete monitoring coverage, low data transmission efficiency and lack of prediction and early warning capabilities in the existing underground coal mine gas monitoring method are solved. And the accuracy of gas concentration detection and the intelligent level of gas monitoring are improved.

The invention discloses a self-isolation type image sensing structure, a sensor and a preparation method, and belongs to the field of semiconductors, the self-isolation type image sensing structure is characterized in that a shallow trench isolation structure is exposed after the back surface of a substrate is thinned, then a first semiconductor layer is extended on the back surface of the substrate, and a first isolation structure is prepared in the first semiconductor layer; sequentially depositing a second semiconductor material layer and a metal grating material layer on the first semiconductor layer; sequentially etching the metal grating material layer and the second semiconductor material layer to form a plurality of metal grating structures distributed at intervals and corresponding self-isolation structures; extending a plurality of photosensitive layers in the photosensitive region groove between the adjacent self-isolation structures to form a photosensitive region; and then activating, preparing a filter layer and the like are carried out to obtain a complete back-illuminated image sensor. The self-isolation photodiode is obtained by changing the structural distribution of the photodiode, unexpectedly, the problem that the substrate is damaged by doping is solved, meanwhile, the crosstalk effect is greatly reduced, and the performance of the image sensor is improved.

The invention discloses an external bias pixel structure of a light receiving stage circuit in a dynamic vision sensor pixel. The external bias pixel structure comprises a photodiode, a logarithmic tube, an amplifier tube, a switch tube and a bias tube, the bias tube, the switch tube and the amplifier tube are sequentially connected in series, a source electrode of the bias tube is connected with a power supply, a drain electrode of the bias tube is connected with a drain electrode of the switch tube, a source electrode of the switch tube is connected with a drain electrode of the amplifier tube, and a source electrode of the amplifier tube is grounded; the grid electrode of the bias tube is in signal connection with Vbias, the grid electrode of the switch tube is in signal connection with Vcpr, the source electrode of the switch tube and the drain electrode of the amplifier tube are connected with the grid electrode of the logarithmic tube, the drain electrode of the logarithmic tube is connected with a power supply, the source electrode of the logarithmic tube is connected with the negative electrode of the photodiode, and the positive electrode of the photodiode is grounded. And a grid electrode of the amplifier tube is also connected between the source electrode of the logarithmic tube and the negative electrode of the photodiode.

A burst-mode optical receiver for an optical line terminal (OLT) of a passive optical network (PON) comprises a variable optical attenuator (VOA), a photodiode (PD) which may be a pin-PD or an APD, a transimpedance amplifier (TIA), and a feedback / control circuit for adjusting a bias voltage of the VOA in response to a burst-mode optical input signal level, to provide an attenuated optical output signal to the PD having a narrower dynamic range. Providing signal level adjustment in the optical domain mitigates the requirement for a burst-mode TIA with a large dynamic range and provides for fast switching. The burst-mode optical receiver may comprise a waveguide configuration, wherein a first electro-absorption modulator (EAM) is operable as the VOA and a second EAM is operable as the photodiode. A monolithically integrated electro-photonic circuit comprising the VOA, PD, TIA and feedback / control circuit may be provided using InP-based semiconductor materials.

The invention relates to a single-photon transmission device for enabling secure authentication, said device comprising a plurality of single-photon sources, a control device which is configured to actuate each of the single-photon sources separately, and an optical subdevice which is configured to combine single-photon streams of photons emitted by the at least one single-photon source into a QKD coupling beam consisting of a common stream of single photons. The invention also relates to a single-photon receiving device for receiving a QKD coupling beam transmitted from a single-photon transmission device. The invention also relates to a method for generating a common quantum key for a single-photon transmission device and a single-photon receiving device. The invention also relates to an integrated QKD circuit. The invention also relates to a car key comprising a single-photon transmission device and / or a single-photon receiving device. The invention also relates to a car comprising a single-photon transmission device and / or a single-photon receiving device. The invention also relates to the use of a single-photon transmission device and / or a single-photon receiving device for data exchange. The invention also relates to a SPAD diode for a sensor element of a single-photon detector for a single-photon transmission device and / or for a single-photon receiving device.

Apparatus and methods for lighting. The apparatus may include a retention body. The retention body may be retained in a housing. The apparatus may include a rotatable body. The rotatable body along with the retention body may define a central axis. The rotatable body may rotate relative to the retention body. The apparatus may include an articulating body. The articulating body may include a light emitting diode (“LED”) light source. The articulating body may tilt relative to the rotatable body. In operation the LED light source may generate heat. The housing, the retention body, the rotatable body and the articulating body may dissipate the heat. The housing, the retention body, the rotatable body and the articulating body may dissipate the heat so that the housing has a surface temperature that does not a predetermined maximum surface temperature.

The invention discloses a high-precision laser ranging system and method based on multi-frequency modulation, and relates to the field of laser ranging, and the system comprises a multi-frequency laser transmitting module which comprises generators of different frequency bands and can be independently regulated, rapidly switched and matched with a high-precision frequency modulation unit; the laser receiving and signal conditioning module is used for processing signals by using an avalanche photodiode, a low-noise preamplifier and the like; the signal processing and analyzing module is used for calculating the distance by means of a high-speed digital signal processor in combination with a multi-frequency distance measurement algorithm; a display and control module and a temperature compensation module are further included, the method comprises the steps of multi-frequency laser emission, receiving conditioning, signal processing, display control and temperature compensation, and high-precision distance measurement is achieved through fine operation according to environment and target characteristics. The method is high in distance measurement precision, and error compensation in a complex environment exceeds 90%; the adaptability is high, and automatic adjustment is achieved in different distances and environments; the real-time performance is good, and a result can be obtained within 10 milliseconds; operation is convenient, wireless and data management is supported, and laser ranging innovation is promoted.

The embodiment of the invention discloses a midpoint potential control method based on a diode clamping type three-level grid-connected inverter and a related device. The method comprises the following steps: generating an initial three-phase modulation wave through a current loop closed-loop control method according to a collected three-phase current value and a three-phase voltage value of a power grid side of the diode-clamped three-level grid-connected inverter; according to an initial modulation waveform generated by the initial three-phase modulation wave, a three-phase current value and an acquired voltage value of a voltage dividing capacitor at the direct current side of the diode clamping type three-level grid-connected inverter, calculating a zero-sequence component required by neutral-point potential balance; superposing a zero-sequence component required by neutral-point potential balance with the initial modulation waveform to obtain a final modulation wave; and generating a driving signal matched with each phase of bridge arm in the diode clamping type three-level grid-connected inverter according to the final modulation wave. By adopting the invention, the neutral-point voltage can be balanced, the distortion of the output waveform at the alternating current side is reduced, the voltage stress of the device is reduced, and the service life of the power device is prolonged.

The invention discloses a synthetic aperture quantitative phase imaging method based on mixed digital holography and Fourier lamination, which comprises the following steps of: installing a programmable LED (light-emitting diode) array which is annularly arranged on an off-axis digital holography system for providing inclined illumination of angle transformation, obtaining accurate low-frequency information of an object which contains noise through digital holography, and taking the information as initial estimation; and then, object high frequency is reconstructed through a Fourier lamination algorithm based on intensity measurement, so that synthetic aperture quantitative phase imaging is realized. According to the invention, the accurate low frequency provided by holography is used as initial estimation, so that the accuracy of phase recovery and wavefront aberration reconstruction is ensured, a matched illumination condition does not need to be strictly met, and meanwhile, the number of intensity graphs required by Fourier lamination is reduced; the non-interferometric phase recovery method based on Fourier lamination improves the imaging resolution to an incoherent diffraction limit, and effectively solves the inherent speckle noise problem in digital holography.

The invention discloses an output conversion system and method for a UPS (Uninterrupted Power Supply), and the system comprises a main power input end which is connected with a bridge rectifier through a first electromagnetic relay; the energy storage module comprises a super capacitor group and a parallel lithium battery group, and is coupled with the bus capacitor through a bidirectional DC / DC converter; the input end of the multi-path regulation and control module is connected with the bus voltage sensor, and the output end is connected with the switching execution unit through a second electromagnetic relay group; the dynamic switching unit comprises an I-GBT matrix and a reverse blocking diode array which are respectively connected with the inverter and the bypass circuit in parallel; and the real-time monitoring module is provided with a current harmonic analysis unit and a load break variable detection unit, and the output end of the real-time monitoring module is connected with the ADC port of the central processor. According to the invention, systematic improvement is realized in three dimensions of electric energy quality guarantee, equipment reliability and dynamic response capability through an original multi-path regulation and control architecture and a deep cooperative intelligent control strategy.

The invention relates to a power equipment self-repairing surge protection system based on artificial intelligence, and the system is characterized in that a surge detection module is connected between a live wire and a protection ground wire of power equipment, collects voltage and current data, and transmits the data to an artificial intelligence analysis unit; and the artificial intelligence analysis unit extracts the surge characteristic parameters, generates protection strategy parameters through a deep neural network, and controls the trigger thresholds of all levels of protection devices in the programmable protection circuit. The programmable protection circuit comprises a gas discharge tube capable of adjusting trigger voltage, a metal oxide varistor and a transient voltage suppressor diode, and is used for discharging surges with different energies step by step. The resettable fuse cuts off the circuit when the temperature exceeds a threshold value and recovers conduction after the temperature is reduced. And the controller receives and applies the protection strategy parameter output by the artificial intelligence analysis unit, and dynamically adjusts the trigger threshold value of the protection device, so that the response and protection performance of the system to the surge is improved, and the self-repairing and stable operation of the power equipment are realized.

An electrical circuit includes positive and negative voltage rails, a reference voltage rail, a non-trimmable bandgap core configured to output a voltage reference on the reference voltage rail, and a trimming element in an auxiliary section located external to the bandgap core. A current source is coupled to the non-trimmable bandgap core and the positive voltage rail. An auxiliary diode arranged in an auxiliary section outside of the bandgap core is coupled to the current source and negative voltage rail. The trimming element is coupled to the current source external to the non-trimmable bandgap core and has an adjustable set point. The adjustable set point is adjusted to inject a corresponding bias current to the auxiliary section during a trimming process and thereby change the voltage reference.

The invention provides a light-emitting diode chip and a preparation method thereof, and the light-emitting diode chip comprises a conductive silicon wafer, a metal bonding layer, an N-type conductive metal layer, a first insulation protection layer, a P-type conductive metal layer, a P-type reflection metal layer, a current blocking layer, a current expansion layer, and an epitaxial layer which are stacked from bottom to top. The projection of the edge of the P-type conductive metal layer on the current expansion layer is located in the projection of the isolation groove on the current expansion layer, and the ratio of the distance between the projection of the edge of the P-type conductive metal layer on the current expansion layer and the projection of the edge of the isolation groove on the current expansion layer to the width of the isolation groove is 1 / 3-2 / 3. The isolation groove and the cutting wall are arranged on the current expansion layer, and the distance proportion relation between the edge of the P-type conductive metal layer and the isolation groove is favorable for controlling the distribution of current in the light-emitting diode chip, so that the current is prevented from being excessively concentrated, the current is more uniformly expanded to the epitaxial layer, and the overall light-emitting efficiency and stability of the light-emitting diode chip are improved.

System and method for controlling one or more light emitting diodes. For example, the system includes: a current regulator including a first regulator terminal and a second regulator terminal, the first regulator terminal being configured to receive a diode current flowing through the one or more light emitting diodes, the current regulator being configured to generate a sensing signal representing the diode current, the second regulator terminal being configured to output the sensing signal; a bleeder controller including a first controller terminal and a second controller terminal, the first controller terminal being configured to receive the sensing signal from the second regulator terminal, the bleeder controller being configured to generate a first bleeder control signal based at least in part on the sensing signal, the second controller terminal being configured to output the first bleeder control signal.

According to an aspect, a detection device includes: an annular housing; a first flexible substrate provided along a shape of the annular housing; a battery provided on the first flexible substrate; a light source provided on the first flexible substrate; a coil to charge the battery provided on the first flexible substrate; and an optical sensor including a second flexible substrate and a plurality of photodiodes provided in a detection area of the second flexible substrate. One end of the second flexible substrate of the optical sensor overlaps one end of the first flexible substrate, and the second flexible substrate is electrically coupled to the first flexible substrate. The coil is disposed in a position that is different from those of the one end of the first flexible substrate and the light source and is between the one end of the first flexible substrate and the light source.

The invention relates to a backside illuminated image sensor and a manufacturing method thereof, and relates to the technical field of integrated circuits. The manufacturing method comprises the steps that a substrate is provided, the substrate comprises a first surface and a second surface which are opposite, a first isolation structure is formed in the substrate, and the first isolation structure extends from the first surface to the second surface; second isolation structures and metal grids are formed, the second isolation structures correspond to the first isolation structures and are arranged on the first surface, the second isolation structures are arranged on the first surface at intervals, and the second isolation structures and the metal grids are sequentially arranged in the direction away from the first surface; forming photodiodes between the second isolation structures, wherein the photodiodes and the second isolation structures are alternately arranged on the first surface; forming a light filtering element on one side, far away from the substrate, of the photodiode, wherein the light filtering element is located between the adjacent metal grids; according to the invention, the crosstalk problem of the backside illuminated image sensor is reduced.

A multi-layer display including an upper substrate including light emitting diodes (LEDs) fabricated on a topside of the upper substrate, and LED bonding pads fabricated on a bottomside of the upper substrate. The LED bonding pads being electrically connected to the LEDs through vias extending through the upper substrate. The display also including a lower substrate including LED driver circuits and driver bonding pads fabricated on a topside of the lower substrate. The driver bonding pads being electrically connected to the LED driver circuits, where the LED bonding pads and driver bonding pads are aligned and electrically connected to each other, thereby electrically connecting the LED driver circuits to the LEDs.

The invention discloses processing equipment for a light emitting diode, and relates to the technical field of diode production, the equipment comprises four stations, namely a feeding station a, a rotating station b, a plugging station c and a discharging station d, and further comprises a main body frame, the main body frame comprises a mounting table arranged on the main body frame, and a fixed table is fixedly mounted on the surface of the mounting table; the clamping mechanism comprises four rotating sliding plates mounted on the fixed table, and an upper clamping plate and a lower clamping plate are mounted on the surface of each rotating sliding plate in a sliding manner; through the reset effect of the rotating mechanism and the effect of the discharging mechanism, the plugged diodes fall off from the mechanism, so that the purpose of rapid discharging is completed, at the moment, in the process of moving from the discharging station d to the feeding station a, the upper clamping plate and the lower clamping plate are reset through the effect of the deflection mechanism, the plugging mechanism and the discharging mechanism, and the diodes are rapidly discharged. Therefore, the purposes of quickly and circularly plugging the diode and improving the production efficiency are achieved.

A monolithic half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.