18659 results about "Diode" patented technology

The invention relates to a backside illuminated image sensor, a preparation method thereof and electronic equipment. The backside illuminated image sensor comprises a substrate, a grating, photodiodes and target isolation structures, wherein the photodiodes and the target isolation structures are located on the first surface of the substrate, are alternately arranged in the first direction parallel to the first surface and extend towards the substrate; the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures and the target isolation structures over the trench isolation structures are arranged in a one-to-one manner; the photodiode comprises a SiAs laminated layer and a SiAs cover layer which are arranged along a direction away from the substrate, and a SiP layer which penetrates through the SiAs laminated layer along a first direction and a direction towards the substrate; the target isolation structure comprises a protruding part higher than the top surface of the photodiode; the grating and the protruding parts are prepared in the same process step at the same period. Signal crosstalk of the BSI image sensor and unnecessary damage caused by IMP can be avoided, and photoelectric conversion efficiency can be improved.

Embodiments provided herein generally include apparatus, plasma processing systems and methods for tuning in a radio frequency (RF) plasma processing system for improving substrate processing metrics. Some embodiments are directed to an apparatus for processing a substrate in a plasma processing system. The apparatus generally includes: an impedance for a match circuit configured to perform impedance matching for a plasma load; a diode-based switch coupled to the impedance for the match circuit; at least one signal generator coupled to the diode-based switch and configured to bias the diode-based switch to a first position based on a first impedance generated in the plasma load; and a second position based on a second impedance generated in the plasma load and an RF signal generator configured to provide an RF signal to the plasma load.

The invention relates to the technical field of mine safety, and discloses a coal mine underground gas monitoring method and system. The method comprises the following steps: acquiring methane absorption intensity data by adopting a tunable diode laser absorption spectrum, converting the methane absorption intensity data into gas concentration based on a Lambert-Beer law, performing temperature and humidity compensation, calculating a transmission priority according to concentration deviation to form a data packet, and establishing a spatial interpolation model by utilizing multipoint data to predict gas concentration distribution. Calculating a risk assessment index based on the predicted distribution, automatically adjusting the rotating speed of the ventilator, and controlling the electrical equipment to be powered off. According to the method, the technical problems of low detection precision, incomplete monitoring coverage, low data transmission efficiency and lack of prediction and early warning capabilities in the existing underground coal mine gas monitoring method are solved. And the accuracy of gas concentration detection and the intelligent level of gas monitoring are improved.

The invention discloses a self-isolation type image sensing structure, a sensor and a preparation method, and belongs to the field of semiconductors, the self-isolation type image sensing structure is characterized in that a shallow trench isolation structure is exposed after the back surface of a substrate is thinned, then a first semiconductor layer is extended on the back surface of the substrate, and a first isolation structure is prepared in the first semiconductor layer; sequentially depositing a second semiconductor material layer and a metal grating material layer on the first semiconductor layer; sequentially etching the metal grating material layer and the second semiconductor material layer to form a plurality of metal grating structures distributed at intervals and corresponding self-isolation structures; extending a plurality of photosensitive layers in the photosensitive region groove between the adjacent self-isolation structures to form a photosensitive region; and then activating, preparing a filter layer and the like are carried out to obtain a complete back-illuminated image sensor. The self-isolation photodiode is obtained by changing the structural distribution of the photodiode, unexpectedly, the problem that the substrate is damaged by doping is solved, meanwhile, the crosstalk effect is greatly reduced, and the performance of the image sensor is improved.

The invention discloses an output conversion system and method for a UPS (Uninterrupted Power Supply), and the system comprises a main power input end which is connected with a bridge rectifier through a first electromagnetic relay; the energy storage module comprises a super capacitor group and a parallel lithium battery group, and is coupled with the bus capacitor through a bidirectional DC / DC converter; the input end of the multi-path regulation and control module is connected with the bus voltage sensor, and the output end is connected with the switching execution unit through a second electromagnetic relay group; the dynamic switching unit comprises an I-GBT matrix and a reverse blocking diode array which are respectively connected with the inverter and the bypass circuit in parallel; and the real-time monitoring module is provided with a current harmonic analysis unit and a load break variable detection unit, and the output end of the real-time monitoring module is connected with the ADC port of the central processor. According to the invention, systematic improvement is realized in three dimensions of electric energy quality guarantee, equipment reliability and dynamic response capability through an original multi-path regulation and control architecture and a deep cooperative intelligent control strategy.

A multi-layer display including an upper substrate including light emitting diodes (LEDs) fabricated on a topside of the upper substrate, and LED bonding pads fabricated on a bottomside of the upper substrate. The LED bonding pads being electrically connected to the LEDs through vias extending through the upper substrate. The display also including a lower substrate including LED driver circuits and driver bonding pads fabricated on a topside of the lower substrate. The driver bonding pads being electrically connected to the LED driver circuits, where the LED bonding pads and driver bonding pads are aligned and electrically connected to each other, thereby electrically connecting the LED driver circuits to the LEDs.

A transient voltage surge protection circuit includes a discharge transistor having a drain coupled to a first point of a voltage input bus, and a source coupled to ground; an RC string having a first capacitor and a first resistor coupled in series; a first charge transistor having a drain coupled to the drain of the discharge transistor, a source coupled to the gate of the discharge transistor, and a gate coupled to a mid-point between the first capacitor and the first resistor; a second charge transistor having a drain coupled to the drain of the discharge transistor and a gate coupled to the gate of the first charge transistor; a Zener diode string coupled to a second point of the voltage input bus and coupled to a third and fourth resistors in series. A midpoint between the third and fourth resistors is coupled to the second resistor.

The invention discloses a laser channel atmospheric turbulence fading real-time compensation device and method based on a galvanometer system, and the method comprises the steps: enabling an incident light beam to irradiate a transparent PCB integrated with a photodiode array after the incident light beam is focused through a convex lens, obtaining the light intensity distribution of a current light spot through the photodiode array, and transmitting the light intensity distribution to a signal processing unit; the signal processing unit coarsely adjusts the deviation direction of the light spots according to the received light intensity distribution data, and aligns the part with the strongest light intensity in the light spots to the end face of the optical fiber; and based on the roughly adjusted light spot deviation direction, the signal processing unit dynamically adjusts the deflection angle of the galvanometer by using a gradient descent method according to the power measurement value of the receiving coupling module, so that the fine adjustment of the light spot deviation direction is realized, and the receiving coupling power is maximized. The objective of receiving optical power maximization is achieved, optical design, electronic control and algorithm optimization are combined, and atmospheric turbulence compensation with high cost performance is achieved.

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate, forming a third semiconductor layer covering a first semiconductor layer and a second semiconductor layer, the third semiconductor layer comprising an embedded part penetrating through the second semiconductor layer; forming a plurality of isolation parts penetrating through the third semiconductor layer, wherein the plurality of isolation parts are located right above the plurality of first semiconductor layers; forming a plurality of target semiconductor columns arranged at intervals along the first direction in the third semiconductor layer; target doping ions are injected into the remaining third semiconductor layer, so that the target semiconductor columns, the second semiconductor layer and the third semiconductor layer jointly form a plurality of photodiodes. The electron concentration of the photosensitive area is at least increased, and the photosensitive performance of the BSI image sensor is improved.

A time-of-flight pixel circuit includes a photodiode configured to generate charge in response to modulated light reflected from an object. First and second transfer transistors are coupled to the photodiode. The first transfer transistor transfers a first portion of charge from the photodiode in response to a first modulation signal and the second transfer transistor transfers a second portion of charge from the photodiode in response to a second modulation signal. The second modulation signal is an inverted first modulation signal. A first floating diffusion is coupled to the first transfer transistor to receive the first portion of charge in response to a first modulation signal. Each one of a first plurality of sample and hold transistors is coupled between a respective one of a first plurality of memory nodes and the first transfer transistor.

An example MR headset is provided. The example MR headset comprises (i) a set of imaging sensors and (ii) a set of floodlight-emitting diodes (flood LEDs), the sets of imaging sensors and flood LEDs disposed along a front-facing portion of the MR headset. The MR headset includes one or more processors configured to, while the MR headset is being caused to present MR content, and in accordance with a determination that imaging data obtained from the set of imaging sensors has an insufficient level of detail to identify hand gestures, cause illumination, using one or more flood LEDs of the set of flood LEDs, of a volume of physical space that includes the hand of the user.

Disclosed is a binarized neural network circuitry using a quasi-nonvolatile memory device. More particularly, the binarized neural network circuitry according to an embodiment of the present disclosure is characterized in that a diode structure is positioned in a channel region between a drain terminal and a source terminal, a gate terminal is positioned on the diode structure, an operation state is determined by occurrence of a latch-up or latch-down phenomenon due to a positive feedback loop in the channel region based on different voltages applied to the drain terminal and the gate terminal, respectively, and a plurality of quasi-nonvolatile memory devices that implement memory characteristics of remembering a memory state are included as holes or electrons in a potential well in the channel region due to the positive feedback loop are accumulated, and the plural quasi-nonvolatile memory devices are a pair of two quasi-nonvolatile memory devices that operate as a single synaptic cell and are connected in parallel to form an array circuit, memory states of the two quasi-nonvolatile memory devices are determined and stored based on an input line applied from an input line processor connected to the array circuit and a weight update signal applied from a synaptic line processor connected to the array circuit, and a MAC (multiply-accumulate) operation result is output using a combination of the memory states.

The invention discloses a low-cost charging pile topology for a fast charging-slow discharging scene of an electric vehicle and a modulation strategy of the low-cost charging pile topology. According to the low-cost charging pile topology, a group of half-bridge type shunt diodes are connected in parallel to each phase of main bridge arm of a traditional T-shaped three-level converter. In the discharging mode, the charging pile is consistent with a traditional T-type three-level operation state, and works in a slow-release scene with rated power and below. In the charging mode, the charging pile continuously shunts the main bridge arm power device by using the additionally arranged shunting diode, so that the current stress and thermal stress of the main bridge arm power device are reduced; and through a self-adaptive modulation strategy of three-level / two-level modulation mode switching, the loss distribution of a power device is optimized, the active power output capability of the charging pile in a charging mode is improved, the fast charging operation of the charging pile with over-rated power is realized, the equipment capacity utilization rate of the charging pile is fully excavated, and the method has remarkable engineering application value.

The invention relates to the technical field of integrated circuit board manufacturing and packaging, and discloses an integrated circuit board manufacturing and packaging method and system based on laser measurement, and the method comprises the steps: sensing arrangement: employing a focusing lens to focus a laser beam to the surface of a substrate, arranging a reflector and a spectroscope to guide the laser beam to the surface of the substrate, meanwhile, a sensor is arranged in the packaging equipment for monitoring; signal conversion: receiving a reflected light signal by adopting a silicon photodiode, and converting the reflected light signal into an electric signal; data acquisition: acquiring electric signal data, environment data and substrate information data; data calculation: calculating a warping prediction index and an offset prediction index; data evaluation: evaluating the packaging effect index; and comprehensive judgment: according to the packaging result index, judging whether automatic adjustment and compensation need to be carried out, and under the condition that automatic adjustment and compensation need to be carried out, calculating a compensation coefficient to carry out automatic compensation, so that active suppression of the substrate warping offset defect and intelligent improvement of the process efficiency are realized.

A display device may include a display panel having a first area, a second area adjacent to the first area in a first direction, and a third area adjacent to the second area in the first direction, and including first light emitting diodes, second light emitting diodes, first optical members, and second optical members. The display device may further include a mode controller configured to generate a mode selection signal corresponding to a driving mode of the display panel, and a mode selector configured to generate a selection signal based on the mode selection signal, and to supply the selection signal to the display panel. The first and second light emitting diodes and the first optical members may be disposed in each of the first, second, and third areas. The second optical members may be disposed in each of the second and third areas.

The invention discloses a buck-boost circuit-based mppt charging current backflow prevention control method, and relates to the technical field of switching power supplies, and the method comprises the steps: collecting a photovoltaic input voltage, a battery output voltage, and an inductive current flowing through an inductor; the current input power is calculated based on the photovoltaic input voltage and the inductive current, and the reference voltage is dynamically adjusted through an MPPT loop algorithm; pI voltage loop operation is carried out on the output voltage and the adjusted reference voltage, and expected charging current is generated; pI current loop operation is carried out on the expected charging current and the inductive current sampling value after proportionality coefficient adjustment, and a PWM duty ratio control signal is output to adjust the driving states of the four switching tubes; when the judgment circuit is in an intermittent conduction mode and meets critical conditions, a driving signal of the fourth switching tube is shielded, and only a body diode realizes a current path to prevent reverse flow of current; the battery current is effectively prevented from flowing backwards, and the system safety and the energy utilization efficiency are improved.

A transimpedance amplifier device for an optical receiver disclosed by the present invention comprises a bias circuit, a transimpedance amplifier and an amplification driving circuit which are connected in sequence, the bias circuit comprises an upper bias structure and a lower bias structure, and the upper bias structure and the lower bias structure are both connected with the transimpedance amplifier to generate different bias currents. It is ensured that the photodiode PD1 can be conducted and generate light current when light passes through the photodiode PD1, the transimpedance amplifier is used for converting the current into voltage to be output, and the amplification driving circuit is used for amplifying the voltage. According to the optical receiver circuit, micro current generated by the photodiode can be converted into output voltage in a relatively high output range through the transimpedance amplifier, and compared with a traditional optical receiver circuit, the optical receiver circuit is relatively low in cost in circuit structure and has the advantages of low power consumption and high reliability. The driving capability of the circuit can be improved under the condition that a complex amplifier loop and a photoelectric conversion module are not needed, the output voltage in a high range is output, and the performance and the stability are further enhanced.

The invention relates to the technical field of gas detection, and provides a doped gas concentration detection method and system based on a gas analyzer. The method comprises the following steps: constructing a standard spectrum database under the same pressure and temperature as a to-be-measured site; the method comprises the following steps: introducing sample gas into an optical absorption cell, carrying out wavelength scanning through a tunable diode laser in a plurality of adjacent absorption spectral line intervals containing target gas and interference gas, superposing a high-frequency sinusoidal modulation signal on a driving current, and synchronously detecting a second harmonic component of transmission laser to generate an actual measurement spectrum; fitting the actually measured spectrum with a synthetic spectrum generated on the basis of a standard spectrum database, and outputting a target gas concentration ratio as a detection result when a residual error meets a threshold value, so as to solve the technical problem that the detection precision is reduced due to spectrum overlapping caused by interference gas, and achieve the purpose that the detection precision is reduced by constructing the standard spectrum database and second harmonic spectrum fitting analysis. And the accuracy and the anti-interference capability of gas detection are improved.

The invention discloses a frequency converter maintenance test system with a protection function, which belongs to the technical field of frequency converter testing and comprises a detection seat, a simulation unit for simulating actual working conditions of a frequency conversion control panel is arranged on the detection seat, and a detection mechanism for detecting a diode in the frequency conversion control panel is further arranged on the detection seat. Through dynamic cooperation of the polarization assembly and the rotary simulation disc, the vibration direction of the vibration source can be flexibly adjusted, so that a multi-dimensional vibration scene possibly encountered in actual work of the frequency conversion control panel is covered, and the problem that vibration source simulation is lacked in a traditional frequency converter testing process is solved; an elastic supporting environment of actual installation is simulated through the air bag spring suspension, vibration energy emission distortion caused by rigid fixation is avoided, the accuracy of a large-capacitance vibration fatigue test is improved, automatic step-by-step wiring operation of detection is achieved through cooperation of the detection driving assembly and the universal test meter, and the overall detection wiring efficiency is improved.

The invention discloses a visible light communication data transmission method based on dynamic modulation, and particularly relates to the field of visible light technology communication. The method comprises the following steps: performing nonlinear dynamic feature extraction on an actual light intensity signal emitted by a light emitting diode to generate a spectral response feature set; performing segmented analysis on the frequency domain distortion evolution trend based on the frequency spectrum response feature set to obtain a plurality of frequency spectrum distortion subintervals; performing local modulation parameter optimization on each spectrum distortion subinterval to obtain a dynamic local modulation parameter set; mapping the dynamic local modulation parameter set into a modulation driving strategy sequence, and generating a dynamic modulation waveform signal sequence; performing detection and time-frequency feature extraction on the dynamic modulation waveform signal sequence to obtain a target signal sequence after noise suppression; and the target signal sequence is demodulated, complete data is recovered, visible light communication data transmission is completed, and the optical communication signal quality and the data recovery capability in a complex modulation environment are effectively improved.

A semiconductor device includes a semiconductor layer having first and second principal surfaces, an insulated gate bipolar transistor (IGBT) region formed in the semiconductor layer, and a diode region formed adjacent to the IGBT region in a first direction. A plurality of gate trenches are arranged in the IGBT region and extend in a second direction intersecting the first direction. Each trench includes a gate conductive layer embedded through a gate insulating layer, and unit cells are defined between adjacent trenches. An emitter region is formed on the first principal surface of each unit cell. The emitter region of a unit cell located closer to the diode region has a smaller area than the emitter region of a unit cell located farther from the diode region.

An electrically inactive betavoltaic battery, an electrically active betavoltaic battery, and methods of making the same are provided. In implementations, a method of making an electrically active betavoltaic battery includes: providing an electrically inactive betavoltaic battery device having one or more diodes incorporating a semiconductor material layer having a stable non-radioactive isotope; and irradiating the electrically inactive betavoltaic battery device with thermal neutrons, thereby causing the conversion of at least a portion of the stable non-radioactive isotope to a radionuclide and creating the electrically active betavoltaic battery, wherein the semiconductor material layer acts as both an electron emitter and an electron absorber simultaneously.

An isolated bi-directional DC conversion circuit and a method for controlling the same are provided. The DC conversion circuit includes a transformer with a first energy storage element and a primary-side rectification bridge coupled to the primary side of the transformer and a second energy storage element and a secondary-side rectification bridge coupled to the secondary side of the transformer. The primary-side rectification bridge consists of multiple first power switching devices. The secondary-side rectification bridge consists of multiple second power switching devices. Each of the multiple first and the second power switching devices have a body diode in inverse parallel connection therewith. The DC conversion circuit further includes multiple first sampling resistors provided on each bridge arm of the secondary-side rectification bridge and a controller configured to perform switch control on the multiple second power switching devices based on a sampled voltage of the multiple first sampling resistors.

The invention provides a diode packaging defect tracing method and system based on correlation analysis, and relates to the technical field of electronic packaging process optimization and quality control. And extracting the frequency domain characteristic value of the X-ray image and carrying out correlation analysis in combination with the process parameters to determine a key abnormal process parameter combination causing the cavity defect. Therefore, the accuracy and reliability of defect tracing can be comprehensively improved, abnormal process parameters can be quickly positioned, and packaging process conditions can be optimized, so that the occurrence rate of cavity defects is effectively reduced, and the quality and performance of diode packaging are improved; the problem that root process parameters are difficult to accurately position due to cavity defects caused by mismatching of welding temperature and pressure can be solved to a certain extent.

Disclosed in the present invention are a resistor-based voltage-withstanding on-state voltage drop measurement circuit for junction temperature monitoring, and a monitoring method. The measurement circuit comprises: a high-resistance series high-voltage resistor RL; switching diodes D1 and D2; a low-voltage MOSFET M1; a phase inverter U1; a three-state gate U2; an RC delay circuit consisting of a resistor R1 and a capacitor C1; current-limiting resistors R2 and R3; auxiliary voltage sources VDD and VCC; an operational amplifier U3; and an isolation operational amplifier U4. The monitoring method comprises: designing an on-state voltage drop sampling circuit based on a high-resistance resistor, and performing parameter selection on the basis of an actual application scenario; measuring a collector current and on-state voltage drop model at different junction temperatures under offline conditions, so as to provide a calculation model for online monitoring; and under online conditions, performing online monitoring of junction temperature on the basis of the model obtained by means of performing testing under the offline conditions. The present invention has the advantages of being low cost, having high reliability, and adaptability to on-state voltage drop measurement at a high voltage and within a wide ambient temperature range.

A LED circuit with a sequence function includes a load component, a capacitive component, a current load, and a voltage processor. The load component provides a resistance value. The capacitive component is connected to the load component in series at anode. The capacitive component provides a capacitance value, and generates an inner voltage at the node. The current load is connected in parallel to the load component and the capacitive component to provide a current path. The voltage processor receives the inner voltage and a threshold voltage, and compares the inner voltage with the threshold voltage to generate a comparison signal. The LED circuit counts time to acquire a time value from a starting time when the voltage processor starts to generate the comparison signal to a time when a level of the comparison signal changes, and uses the time value for sequencing.

An improved BA-P&O hybrid algorithm based MPPT power supply control method for a satellite, comprising: a solar cell array regulates bus voltage by means of a DC-DC unit to supply power to a load; a storage battery is connected to a bus by means of a diode to supply power to the load; a bat algorithm iteration stage and a perturbation observation stage are used for tracking the maximum power of the solar cell array when the solar cell array and the storage battery supply power together; a bus voltage regulation stage is used for maintaining the bus voltage stable when the solar cell array supplies power independently, and determining the update direction of the current duty ratio on the basis of the current bus voltage sampling value; and the three stages jump to each other on the basis of set conditions. The present invention is used for MPPT power supply control.

The invention relates to the technical field of alternating current grid-connected operation countercurrent prevention, in particular to an alternating current countercurrent prevention method which has the advantages that the structure is simple, and countercurrent can be completely prevented; comprising alternating current positive and negative half-cycle phase sampling driving control, a power switch tube and an ideal diode or a universal diode. An alternating current input is connected to the alternating current positive and negative half-cycle phase sampling driving control part for sampling and is connected to the power switch tubes for providing power input, and the alternating current positive and negative half-cycle phase sampling driving control part outputs two paths of signals to respectively drive and control the corresponding power switch tubes. The output of the switching tube passes through the ideal diode or the universal diode and then outputs respective positive half-cycle and negative half-cycle alternating current in parallel.

Provided in the present invention are a flip light-emitting diode chip and a manufacturing method therefor. The flip light-emitting diode chip comprises: a substrate, and an N-type semiconductor layer, an active light-emitting layer, a P-type semiconductor layer, a current spreading layer, a first insulating layer, a Bragg reflective layer, a metal reflective layer, a second insulating layer, a connection metal layer, a third insulating layer and a bonding pad layer, which are sequentially deposited on the substrate. The connection metal layer comprises a reflective layer and a protective layer that are sequentially arranged from bottom to top; the protective layer comprises a first protective parent layer, a second protective parent layer, and a third protective parent layer that are sequentially arranged from bottom to top, the second protective parent layer comprising n first protective sublayers and second protective sublayers that are periodically stacked, the thicknesses of the first protective sublayers gradually increasing linearly toward the third insulating layer, and the thicknesses of the second protective sublayers gradually decreasing linearly toward the third insulating layer.

The invention relates to a data acquisition and analysis system and method for laser interference measurement, and aims to solve the problem of limited measurement precision caused by asynchronous signal acquisition, imperfect environmental interference compensation and algorithm errors of the existing system. The system comprises a photoelectric conversion unit, a signal conditioning unit, a high-speed synchronous acquisition unit, a real-time processing unit and an error compensation module. The photoelectric conversion unit adopts a four-quadrant PIN photodiode array to receive interference light signals and convert the interference light signals into analog electric signals; the signal conditioning unit performs gain adjustment and bandwidth limitation on the signal; the high-speed synchronous acquisition unit realizes femtosecond-level synchronous acquisition of signals; the real-time processing unit performs phase solution and eliminates harmonic errors based on an improved arc tangent algorithm; and the error compensation module fuses temperature sensor data and accelerometer data to realize thermal drift and vibration compensation.