10701 results about "Diode" patented technology

A multi-layer display including an upper substrate including light emitting diodes (LEDs) fabricated on a topside of the upper substrate, and LED bonding pads fabricated on a bottomside of the upper substrate. The LED bonding pads being electrically connected to the LEDs through vias extending through the upper substrate. The display also including a lower substrate including LED driver circuits and driver bonding pads fabricated on a topside of the lower substrate. The driver bonding pads being electrically connected to the LED driver circuits, where the LED bonding pads and driver bonding pads are aligned and electrically connected to each other, thereby electrically connecting the LED driver circuits to the LEDs.

The invention discloses a buck-boost circuit-based mppt charging current backflow prevention control method, and relates to the technical field of switching power supplies, and the method comprises the steps: collecting a photovoltaic input voltage, a battery output voltage, and an inductive current flowing through an inductor; the current input power is calculated based on the photovoltaic input voltage and the inductive current, and the reference voltage is dynamically adjusted through an MPPT loop algorithm; pI voltage loop operation is carried out on the output voltage and the adjusted reference voltage, and expected charging current is generated; pI current loop operation is carried out on the expected charging current and the inductive current sampling value after proportionality coefficient adjustment, and a PWM duty ratio control signal is output to adjust the driving states of the four switching tubes; when the judgment circuit is in an intermittent conduction mode and meets critical conditions, a driving signal of the fourth switching tube is shielded, and only a body diode realizes a current path to prevent reverse flow of current; the battery current is effectively prevented from flowing backwards, and the system safety and the energy utilization efficiency are improved.

The invention relates to the technical field of gas detection, and provides a doped gas concentration detection method and system based on a gas analyzer. The method comprises the following steps: constructing a standard spectrum database under the same pressure and temperature as a to-be-measured site; the method comprises the following steps: introducing sample gas into an optical absorption cell, carrying out wavelength scanning through a tunable diode laser in a plurality of adjacent absorption spectral line intervals containing target gas and interference gas, superposing a high-frequency sinusoidal modulation signal on a driving current, and synchronously detecting a second harmonic component of transmission laser to generate an actual measurement spectrum; fitting the actually measured spectrum with a synthetic spectrum generated on the basis of a standard spectrum database, and outputting a target gas concentration ratio as a detection result when a residual error meets a threshold value, so as to solve the technical problem that the detection precision is reduced due to spectrum overlapping caused by interference gas, and achieve the purpose that the detection precision is reduced by constructing the standard spectrum database and second harmonic spectrum fitting analysis. And the accuracy and the anti-interference capability of gas detection are improved.

A semiconductor device includes a semiconductor layer having first and second principal surfaces, an insulated gate bipolar transistor (IGBT) region formed in the semiconductor layer, and a diode region formed adjacent to the IGBT region in a first direction. A plurality of gate trenches are arranged in the IGBT region and extend in a second direction intersecting the first direction. Each trench includes a gate conductive layer embedded through a gate insulating layer, and unit cells are defined between adjacent trenches. An emitter region is formed on the first principal surface of each unit cell. The emitter region of a unit cell located closer to the diode region has a smaller area than the emitter region of a unit cell located farther from the diode region.

Provided in the present invention are a flip light-emitting diode chip and a manufacturing method therefor. The flip light-emitting diode chip comprises: a substrate, and an N-type semiconductor layer, an active light-emitting layer, a P-type semiconductor layer, a current spreading layer, a first insulating layer, a Bragg reflective layer, a metal reflective layer, a second insulating layer, a connection metal layer, a third insulating layer and a bonding pad layer, which are sequentially deposited on the substrate. The connection metal layer comprises a reflective layer and a protective layer that are sequentially arranged from bottom to top; the protective layer comprises a first protective parent layer, a second protective parent layer, and a third protective parent layer that are sequentially arranged from bottom to top, the second protective parent layer comprising n first protective sublayers and second protective sublayers that are periodically stacked, the thicknesses of the first protective sublayers gradually increasing linearly toward the third insulating layer, and the thicknesses of the second protective sublayers gradually decreasing linearly toward the third insulating layer.

Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The adjacent metal-containing overhang structures defining each sub-pixel of the sub-pixel circuit of the display provide for formation of the sub-pixel circuit using evaporation deposition and provide for the metal-containing overhang structures to remain in place after the sub-pixel circuit is formed (e.g., utilizing the methods of the fifth, sixth, or seventh exemplary embodiments). Evaporation deposition may be utilized for deposition of an OLED material and cathode. The metal-containing overhang structures define deposition angles, i.e., provide for a shadowing effect during evaporation deposition. The encapsulation layer of a respective sub-pixel is disposed over the cathode with the encapsulation layer extending under at least a portion of each of the adjacent metal-containing overhang structures and along a sidewall of each of the adjacent metal-containing overhang structures.

Systems and methods for operating a vehicle power system are described. The vehicle power system includes an inverter and an electric machine. Switches and a diode are arranged in a way that allows a traction battery to be charged by either a lower voltage charger or a higher voltage charger. Additionally, the switches and diode allow the vehicle power system to heat the traction battery so that the traction battery may operate in a desired temperature range.

Responsive to a voltage across a capacitor being greater than a voltage across a traction battery, a controller may open switches such that charge current from a DC charger flows through a diode to the traction battery without following through coils of an electric machine and without flowing through an inverter.

A a method for manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following consecutive steps: a) epitaxially forming an active semiconductor emitting and receiving stack common to the LED and photodiode; b) forming trenches extending vertically through the active stack, and laterally delimiting the LED and photodiode, wherein the trenches are arranged so that the lateral dimensions of the LED are smaller than the lateral dimensions of the photodiode.

The invention discloses a hybrid direct current transmission power coordination control device and a control method and equipment thereof, and relates to the technical field of offshore power generation, and the hybrid direct current transmission power coordination control device comprises a diode rectifier unit and a first modular multilevel converter which are connected with an offshore wind plant, the sending-end converter station is used for converting alternating current generated by an offshore wind plant into direct current and outputting the direct current; the second modularized multi-level current converter is connected with the diode rectifier unit and the land power grid and is used for restoring the direct current into the alternating current and transmitting the alternating current to the land power grid; and the control module is connected with the first modular multilevel converter and is used for controlling the DC voltage of the first modular multilevel converter based on the fluctuation power according to the transfer relation between the active power and the DC voltage of the sending end converter station, so that the higher requirement of the rated capacity of the MMC in the related technology is met, and the reliability of the MMC is improved. And the engineering construction cost is increased.

Disclosed herein is a single photon avalanche diode (SPAD) pixel circuit, including a SPAD having an anode coupled to a negative voltage and a cathode and a cascode transistor having a drain coupled to the cathode of the SPAD, a gate controlled by a cascode control signal, and a source. A readout circuit is coupled to the source of the cascode transistor and configured to detect a voltage change at the source of the cascode transistor and generate a pulse indicating an occurrence of an avalanche event. An active quenching circuit is coupled to the cathode of the SPAD and configured to detect an onset of the avalanche event and pull the cathode of the SPAD to a negative voltage to quench the avalanche event.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The invention belongs to the pulse power semiconductor technology, and provides a drift step recovery diode with an anode short circuit structure, a cell of the drift step recovery diode comprises an anode structure, a voltage-withstanding layer structure and a cathode structure from top to bottom, and the anode structure is a mixed anode structure comprising a diode anode part, an NPN transistor part and an isolation and insulation part; the diode anode part, the NPN transistor part and the isolation and insulation part are jointly positioned on the voltage-withstanding layer structure; the anode part of the diode comprises a P-type low-doped layer, a P-type anode region and anode metal from bottom to top; the NPN transistor part comprises a P-type base region and an N-type anode region from bottom to top, and then the P-type base region and the N-type anode region form an NPN transistor together with an N-type drift region; the anode metal is located on the upper surfaces of the P-type anode region of the anode part of the diode, the NPN transistor part and the isolation and insulation part and makes contact with the P-type anode region and the N-type anode region at the same time to form a short circuit point, namely, anode short circuit, and better pulse output characteristics and lower process difficulty are achieved.

The invention discloses a high-voltage discharge circuit suitable for a storage battery power supply and an electric flame stove. The high-voltage discharge circuit comprises an inversion driving module, a boosting transformer T1, at least three groups of active bridge rectifier modules and discharge modules corresponding to the active bridge rectifier modules. Through combination of driving of the active bridge rectifier module, voltage / current double-closed-loop feedback and real-time PWM signal output control of the control chip U1, current difference of each discharge branch is eliminated, the problem of uneven branch current is solved, and ring current and reactive power loss between branches are eliminated; a diode in a voltage doubling rectifying circuit and a bleeder resistor of a resonance circuit in the prior art are abandoned, an active bridge type rectifying module is adopted for driving, a PWM signal is dynamically adjusted through the low ESR characteristic of a capacitor C1 and closed-loop control, extra power loss is avoided, the working temperature of the circuit is controlled to be below 85 DEG C, and the service life of the circuit is prolonged. And the continuous service life of components in the circuit is prolonged.

The invention relates to a back-illuminated image sensor and a preparation method thereof, and relates to the technical field of integrated circuits, in which a plurality of photodiode structures are distributed at intervals along a first direction parallel to a back surface and penetrate through a P-type epitaxial layer along a second direction close to a substrate; the bottom photosensitive part comprises a first horizontal part extending along a first direction and a first longitudinal protruding part extending to the back surface of the substrate; the middle photosensitive part comprises a second horizontal part extending in the first direction and a second longitudinal protruding part extending to the top face of the first horizontal part. The second longitudinal protruding part is located on the side, away from the first longitudinal protruding part, of the first horizontal part in the first direction. The top photosensitive part comprises a third horizontal part extending in the first direction and a third longitudinal protruding part extending to the top face of the second horizontal part. The electron concentration of a photosensitive area can be increased at least, and the photosensitive performance and the integration density of the BSI image sensor are improved.

A subpixel including at least one second-conductivity-type pinned photodiode layer that forms a p-n junction with a substrate semiconductor layer, at least one floating diffusion region, and at least one transfer gate stack structure. The at least one transfer gate stack structure may at least partially laterally surround the at least one second-conductivity-type pinned photodiode layer with a total azimuthal extension angle in a range from 240 degrees to 360 degrees around a geometrical center of the second-conductivity-type pinned photodiode layer. The at least one transfer gate stack structure may include multiple edges that overlie different segments of a periphery of the at least one second-conductivity-type pinned photodiode layer, and the floating diffusion region includes a portion located between the first edge and the second edge. In addition, multiple transfer gate stack structures and multiple floating diffusion regions may be present in the subpixel.

The invention discloses a temperature compensation equalizer with adjustable equalization slope linearity, and relates to the technical field of microwave integrated circuits. The equalizer comprises a temperature compensation driving module and a temperature compensation equalization module. The temperature compensation driving module generates a control voltage changing along with the temperature by using the negative temperature characteristic of the diode. The temperature compensation equalization module comprises an equalization circuit formed by resonators and a pair of stacked switch tubes, and realizes a temperature compensation function by controlling voltage to adjust insertion loss; meanwhile, by changing the capacitance value of the equalization slope linearity adjusting capacitor C3 which is connected with the series resonator in parallel, the linearity of the equalization slope can be flexibly adjusted on the premise that the equalization quantity is kept unchanged. According to the invention, the temperature compensation and equalization functions are integrated, the structure is compact, the performance is stable, the slope linearity can be flexibly adjusted, and the device is suitable for gain frequency and temperature compensation in a broadband radio frequency link.

A gate driving circuit, and a display panel and display device including the gate driving circuit are discussed. The display device in an example includes a first switching transistor connected between an output node of a first signal transmitter from which a first gate signal is output and a first gate line, a second switching transistor connected to the output node of the first signal transmitter, a first diode connected between the second switching transistor and the first gate line, a third switching transistor connected between an output node of a second signal transmitter from which a second gate signal is output and a second gate line, a fourth switching transistor connected to the output node of the second signal transmitter, and a second diode connected between the fourth switching transistor and the second gate line.

The invention relates to a method. The invention discloses an ATE-based method for batch detection of pseudo soldering and sealing-off of chip packaging bonding, and belongs to the technical field of semiconductors. The method comprises the following steps: aiming at packaged and bonded chips, providing excitation current for each chip to be tested through an ATE test machine, and conducting an ESD (Electro-Static Discharge) diode connected with each pin of the chip; detecting the voltage drop between each pin and the pin GND; and calculating the equivalent resistance to determine whether pseudo soldering or unsoldering exists. The detection method has high practicability, is simple to operate, is very suitable for large-scale application and popularization, and has a certain promotion effect on improvement of a chip packaging test technology, improvement of chip performance reliability and chip packaging inspection.

An example photon detection circuit, a SPAD sensing device, and a direct time-of-flight detection system comprising a SPAD sensing device configured to operate in a high illumination environments, are provided. The example photon detection circuit includes SPAD circuitry configured to generate a photon detection signal based on a SPAD bias voltage and the number of photons encountering the SPAD. The photon detection circuitry further includes output bias circuitry configured to generate a dynamic output bias signal, wherein the dynamic output bias signal is updated based on the number of photons encountering the SPAD. The example photon detection circuitry further includes output signal circuitry configured to generate a photon detection output signal in an instance in which the photon detection signal exceeds an output signal circuitry threshold, wherein the output signal circuitry threshold is based on the dynamic output bias signal.

The utility model relates to a rear-phase-cut single-live-wire type wall light modulator, which comprises an MOS (Metal Oxide Semiconductor) tube switch loop unit, a singlechip control unit and a direct-current power supply unit, the MOS tube switch loop unit comprises a wiring terminal J2 connected with an MOS tube Q1, a grid electrode of the MOS tube Q1 is connected with four resistors in series in sequence and then is connected with an MOS tube Q2, a drain electrode of the MOS tube Q2 is connected with a diode D2, the diode D2 is connected with a diode D1, a fixed end contact of a single-pole double-throw switch is connected with the MOS tube Q2, and two movable end contacts of the single-pole double-throw switch are connected with the wiring terminal J1 and the wiring terminal J3 respectively; the direct-current power supply unit comprises an alternating-current voltage waveform acquisition circuit, a direct-current voltage drop circuit, an overcurrent protection circuit and a filtering voltage stabilizing circuit; according to the single-chip microcomputer control unit, a linear sliding potentiometer is connected with the PC2 end of a single-chip microcomputer after being connected with a resistor in series, the linear sliding potentiometer and a rotary potentiometer are sequentially connected between the output end of the direct-current power supply unit and the ground in series, a triode Q6 is connected with a triode Q5 and then connected with the collector electrode of a triode Q7, and the base electrode of the triode Q7 is connected with the PA6 end of the single-chip microcomputer after being connected with a resistor in series.

The present invention provides a light emitting diode chip comprising a substrate, a plurality of light emitting diodes, a first electrode and a second electrode, the second electrode being at least partially embedded in the substrate such that a bottom end of the second electrode is lower than a bottom end of the plurality of light emitting diodes. In the invention, the second electrode is at least partially embedded into the substrate of the chip, so that the space between the adjacent light-emitting diodes occupied by the second electrode is reduced, the gap between the adjacent light-emitting diodes can be adaptively reduced, and the overall size of the chip is relatively reduced; therefore, the method can be matched with lighter and more portable electronic equipment, and is suitable for more application scenes. The invention further provides a light-emitting diode chip, the top surface of the top semiconductor layer of the light-emitting main body of the diode is arranged to be a non-plane with an optical microstructure, light emitting can be enhanced, diffuse reflection can be increased, the light emitting rate can be improved, and the performance of the light-emitting diode chip can be optimized.

The invention discloses an optical interconnection system which comprises a light source, a transmission medium and a photoelectric detector. The light source adopts a micro resonant cavity light-emitting diode array, and the transmission medium adopts a multi-core plastic optical fiber. An optical signal output by the micro resonant cavity light emitting diode array is transmitted to the photoelectric detector through the multi-core plastic optical fiber and is converted into an electric signal through the photoelectric detector. The light source of the optical interconnection system provided by the embodiment of the invention adopts the micro resonant cavity light-emitting diode array, the transmission medium adopts the multi-core plastic optical fiber, and good balance among low power consumption, high stability and high parallelism can be achieved through component optimization.

A light-emitting-diode driver structure applicable to driving a display panel and operation method thereof are provided. The LED driver structure includes at least one LED driving group, and the LED driving group is composed of a plurality of LED driving circuits which are serially connected in cascade. Each LED driving circuit of the LED driving group receives a data input signal in common. Upon receiving control signals, output signals are generated to drive the display panel. The multi-point driving circuit scheme can be fully or partially applied in the driver structure as required. In addition, a plurality of enable signals can be further adopted to activate each LED driving circuit, for avoiding the FIFO register used in the prior arts. By employing the disclosed technical contents, the present invention is effective in reducing both redundant power waste and circuit layout area of a conventional LED driver.

The invention provides an optical sensing measurement method based on closed-loop adjustment of LED driving, and relates to the technical field of optical sensing. The method comprises the following steps: initializing a system; the microcontroller reads a current value of the analog-to-digital converter and calculates an error; calculating a new set value of the driving current of the light emitting diode according to the error; the microcontroller outputs the new set value to the digital-to-analog converter, the digital-to-analog converter controls the driving circuit to adjust the driving current of the light emitting diode, and after a preset time period, the current value of the analog-to-digital converter is collected; repeating the steps, when the error absolute value is smaller than a preset threshold value, judging that closed-loop convergence occurs, and recording the driving current at the moment and the current value of the analog-to-digital converter as measurement results; and obtaining the sample concentration according to the calibration curve and the driving current in the measurement result. According to the scheme, the dynamic range and the low-concentration precision are remarkably improved, LED aging and temperature excursion are inhibited, the circuit is simplified, and multiple groups of current-limiting resistors and multi-gear change-over switches are not needed.

A light source a backplane including drive circuits formed thereon, an array of micro-light emitting diodes (micro-LEDs) bonded to the backplane, and an array of micro-lenses on the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a mesa structure that includes a p-doped semiconductor layer, an n-doped semiconductor layer, an active region between the p-doped semiconductor layer and the n-doped semiconductor layer, and a dielectric layer underneath the p-doped semiconductor layer or the n-doped semiconductor layer and surrounding the active region. In some embodiments, the center of the active region of a micro-LED of the array of micro-LEDs is horizontally offset from the center of the mesa structure of the micro-LED and the center of a corresponding micro-lens of the array of micro-lenses.

The invention discloses a saturated spectrum processing method for wide-range detection of an absorption spectrum of a tunable diode, and relates to the technical field of spectrum gas detection. According to the saturated spectrum processing method for wide-range detection of the absorption spectrum of the tunable diode, an effective spectrum signal is obtained by performing denoising and baseline correction on an original absorption spectrum signal, a plurality of spectrum characteristic parameters are extracted to calculate a saturated quantized value, and a complete absorption spectrum line contour is reconstructed by adopting a spectrum reconstruction algorithm according to the quantized value, so that the wide-range detection of the absorption spectrum of the tunable diode is realized. The method comprises the following steps of: constructing a saturation quantitative evaluation system, a layered self-adaptive spectrum reconstruction strategy, a dual-mode detection fusion mechanism and a working condition compensation model, calculating weights of an absorption spectrum and a wavelength modulation spectrum through an S-type function, correcting a preliminary concentration value by combining environment temperature, pressure and a compensation model, and outputting an accurate final gas concentration. Without additional hardware, wide-range high-precision gas detection is realized, and environmental interference and saturation influence are eliminated.

A device useful as a switch including an input waveguide coupled to an output waveguide; a first diode circuit integrated with the input waveguide at a first termination; a second diode circuit integrated with the output waveguide at a second termination; and wherein the biasing the diode circuits switches the switch between an off state and an on state and achieves high isolation in the off state by absorbing input power in, reflecting the input power from, and frequency multiplying the input power using the diodes in the diodes circuits when the input power is received from the input waveguide. In one embodiment, the switch is a tunable, solid-state SPST switch for Gband radar applications.

The invention discloses a superconducting rectifier, a superconducting diode and a manufacturing and control method thereof, and belongs to the technical field of superconducting electronics, the superconducting rectifier comprises more than one superconducting diode, the superconducting diode comprises an insulating substrate and a superconducting nanowire, the superconducting nanowire is provided with a narrowing section, and the narrowing section is provided with a narrow section. The narrowing section is connected with a first gate line and a second gate line, the first gate line and the second gate line are symmetrically arranged, and the first gate line and the second gate line are both perpendicular to the superconducting nanowire. According to the invention, in-situ reconfigurable reversal symmetry destruction can be realized through a nanoscale hot spot controlled by a grid electrode; electrically controlled opening or closing and polarity reversal are realized by adjusting a small grid current without changing a magnetic field; the superconductive rectifier realizes electrically reconfigurable full-wave and half-wave rectification, and paves a way for development of extensible and electrically programmable superconductive electronic devices.

The invention discloses a power supply control system and method for an eVTOL low-voltage distribution box, and relates to the technical field of power supply control, and the system comprises a multi-source double-bus power supply unit, a voltage reduction unit and an output unit. The multi-source double-bus power supply unit comprises a first bus independent power supply channel and a second bus independent power supply channel, the first bus independent power supply channel and the second bus independent power supply channel are isolated based on a contactor, the first bus independent power supply channel comprises x heterogeneous power sources and x ideal diodes, and the x heterogeneous power sources comprise a high-voltage-to-low-voltage DC-DC power source, a ground power source and n lithium battery power sources. The second bus independent power supply channel comprises y paths of heterogeneous power supplies and y ideal diodes, and the y paths of heterogeneous power supplies comprise y paths of lithium battery power supplies; the step-down unit comprises m paths of DC-DC step-down converters; and the output unit comprises m ideal diodes which are connected in parallel with the output end of the DC-DC buck converter. According to the invention, the stability and quality of power supply are ensured, and airborne equipment is ensured to work in a stable voltage and current environment.