58 results about "Evaporation (deposition)" patented technology

This invention relates to a method for remote epitaxial growth of single-crystal lead-free perovskite microsheets on germanium, comprising the following steps: using CsBr and SnBr2 as source materials placed in a reaction region, using argon as a carrier gas, placing germanium-based graphene in a deposition region, and then heating to react the source materials, followed by evaporation and deposition onto the germanium-based graphene to form single-crystal lead-free perovskite microsheets. The method of this invention can obtain perovskite microsheets with good orientation and is environmentally friendly. Furthermore, germanium is a mature semiconductor material with well-established wafer fabrication, cleaning, and surface treatment processes, making large-scale production possible and providing a new path for perovskite to move from the laboratory to high-performance, multifunctional integrated optoelectronic devices.

The object of the present invention is to provide a vapor deposition mask capable of forming vapor-deposited films with excellent pattern dimensions, and a method for manufacturing electronic devices using the vapor deposition mask. The vapor deposition mask of the present invention has a first surface and a second surface opposite to the first surface, and is formed with a plurality of openings penetrating between the first surface and the second surface. The mask is characterized in that protrusions extending from the first surface to the second surface are formed on the sidewalls of the openings, and the protrusion ratio of the protrusions relative to the opening width of the openings is 0.001 to 0.018.

To enable suppressing arrival of a vacuum deposition material discharged from a discharge opening at a shielding position of a shutter to an object to be deposited in a vapor deposition source of a vacuum evaporation system having: a crucible 2 that accommodates a vapor deposition material Em and has the discharge opening 21 arranged on an upper surface; heating means for heating the vapor deposition material in the crucible; and a shutter Sn for selectively shutting off a scattering path of the vapor deposition material discharged from the discharge opening.SOLUTION: In a vacuum deposition source according to the invention: a shutter comprises a shutter body 4 including a base end 41 and a skirt 42 hanging down from the base end, with a first attenuation plate 43 extending in a circumferential direction orthogonal to a vertical direction being provided on a lower edge of the skirt; and the shutter further comprises a second attenuation plate 6 having an opening facing an upper edge part of the crucible, arranged around the crucible, and forming a space extending in a circumferential direction between the first attenuation plate and the second attenuation plate.SELECTED DRAWING: Figure 2

The application provides an integrated co-evaporation source furnace, and belongs to the technical field of film coating. Specifically, the integrated co-evaporation source furnace comprises a furnace body, a heating unit, a film deposition assembly, a flow guide cover and an outer cover body. The film deposition assembly is arranged above the furnace body and is used for carrying a substrate. A deposition space is arranged in the film deposition assembly. The flow guide cover is installed on the film deposition assembly and can cover the flow-through openings. The outer cover body can cover the film deposition assembly and the heating unit. The outer cover body can be connected to a vacuumizing device. The space covered by the outer cover body is vacuumized by the vacuumizing device. The film deposition assembly can rotate and move, and in the process of rotating and moving, the flow guide cover can pass above the flow-through openings one by one. Through integrated design, the structure is compact, multiple heating units are integrated in the same furnace body, and the rotating film deposition assembly is matched, so that the continuous deposition of a multilayer heterostructure film is realized. The substrate does not need to be transferred between different devices, the equipment volume is greatly reduced, and the production efficiency is improved.

To provide a vapor deposition source for a vacuum deposition apparatus which enables direct replenishment of a deposition material without atmospheric exposure of a vacuum chamber, where the deposition is performed, while maintaining stable deposition rates even after replenishment.SOLUTION: The present invention provides a vapor deposition source DS1 for a vacuum deposition apparatus Dm1 that causes a deposition material Ms within a storage box 4, vaporized or sublimated by heating means Mt, to be released from a release part 42 and then deposited onto a target to be deposited Sw in a vacuum chamber 1. Above the storage box, a communication room 2a, 31 with a first opening-closing door 5a and a material storage room 6a are provided to enable the formation of a vacuum atmosphere. The material storage room is provided with a chute 71 with a part 71a projecting into the communication room, an input port 61 that enables the injection of the deposition material into the material storage room, a second opening-closing door 5b that closes the input port in a freely openable manner, and a delivery screw 72 that extends vertically, passing through the chute. The portion of the delivery screw projecting from the chute is provided with a diffuser 8a which extends slanting downwards in the vertical direction.SELECTED DRAWING: Figure 1

The utility model relates to a kind of preparation systems of perovskite photovoltaic cell.A kind of preparation system of perovskite photovoltaic cell, including multiple work units, conveying device, feed inlet and discharge port, and the hatch being set at the feed inlet, the discharge port and adjacent two between the work unit;The multiple work units are interconnected;The multiple work units include at least one of first work unit, second work unit, third work unit and fourth work unit;The first work unit includes flash evaporation cabin, the second work unit includes annealing cabin, the third work unit includes evaporation cabin, and the fourth work unit includes deposition cabin;The conveying device, from the feed inlet sequentially through the multiple work units, and extend to the discharge port.It is a perovskite one-stop deposition and processing system, can be realized in different vacuum environment under the same equipment to complete perovskite thin film intermediate phase transition, annealing and preparation charge transport layer.

The present application relates to a metal iridium complex and an organic electroluminescent device. The metal iridium complex has a general formula of Ir(La)(Lb)(Lc), the structure thereof being shown as a formula (1). The metal iridium complex provided by the present application has the advantages of low evaporation deposition temperature, high optical and electrochemical stability, narrow half-peak width, high color saturation, high light-emitting efficiency, long device service life and the like. Therefore, the metal iridium complex can be used in organic light-emitting devices, particularly used as a red light-emitting phosphorescent material, and has the possibility of being applied to the AMOLED industry.

Disclosed is a method for manufacturing indium monoselenide semiconductor thin film for fabricating large-area thin film transistor. The present disclosure provides the method for manufacturing an indium monoselenide semiconductor thin film, the method comprising: (a) depositing a deposition source including an indium selenide (InSe) on a substrate using a thermal evaporation method, thus preparing a first indium monoselenide semiconductor thin film including a first indium monoselenide (InSe); and (b) annealing the first indium monoselenide semiconductor thin film, thus preparing a second indium monoselenide semiconductor thin film including a second indium monoselenide (InSe). The indium monoselenide semiconductor thin film according to the present disclosure can be applied to large-area thin film transistors, and the large-area thin film transistors including the indium monoselenide semiconductor thin film according to the present disclosure can be applied in circuits.

The application provides a high-uniformity oblique-angle electron beam evaporation device and a control method thereof, and relates to the technical field of semiconductor equipment. The device comprises a vacuum cavity and an electron beam evaporation source; a substrate is obliquely arranged in the vacuum cavity, and further comprises a guard plate sleeved on the exit side of the evaporation source, wherein the guard plate is provided with an opening coaxial with the center point of the substrate and facing the evaporation source; a shielding plate is arranged above the opening and can be programmed to move linearly, and the stroke of the shielding plate is suitable for being arranged in the horizontal direction to time-domain modulate the size of the evaporation beam passing through the opening during the evaporation process; and a controller is used to drive the shielding plate to perform step-by-step opening according to a predetermined scanning track after the deposition rate is stabilized, and the travel direction of the predetermined scanning track is implemented according to a compensation strategy of exposing first away from the evaporation source area and then exposing close to the evaporation source area. The scheme is used to control the uniformity of the sputtering of the substrate film coating.

The application discloses a kind of based on multi-arc ion plating and ion beam enhanced electron beam evaporation coating device and method, it is related to material processing technical field.Coating chamber is equipped with heater, ion beam enhanced electron beam evaporation assembly includes multiple groups of matched arrangement crucible, electron gun, deflection coil and high-current ion source, multi-arc ion plating assembly includes cathode arc evaporation source array, workpiece motion control mechanism is connected bias power supply, vacuum and gas supply system carries out vacuumizing and gas supply, water supply and power supply system carries out water cooling and heat dissipation and provides operating power supply for each component, control system is respectively connected with each component Signal is used for real-time control and adjustment of each process parameter in deposition process.Integrated structure design and process synergy can complete multi-arc ion cleaning, multi-arc priming and high-current ion enhanced electron beam deposition composite coating full process in coating chamber, simplify operation process, improve coating efficiency and quality.

A method of coating a substrate (10) in a vacuum chamber is described. The substrate has a structure formed thereon, the structure comprising a first sidewall (11) adjacent to the pixel region (13) and a first overhang (12) partially projecting from the first sidewall (11) over the pixel region (13). The method comprises: arranging a first vapor deposition source (101) in a first deposition location, the first vapor deposition source having a first vapor distribution conduit (110) having a first row of nozzles (111) having a first main vapor deposition direction (M1); and transporting the substrate (10) through the first vapor deposition source (101) while directing a first material from the first row of nozzles (111) towards the substrate. In the first deposition position, the first main vapor deposition direction (M1) is inclined by a first inclination angle ([alpha] 1) with respect to a surface normal (SN) of the substrate to increase or decrease deposition of the first material below the first overhang (12). A material layer of the OLED layer stack may be deposited on the substrate.

The application discloses a kind of for winding vacuum coating anti-fingerprint film raw material continuous supply and deposition system, comprising: discharging unit, medium unit, evaporation unit and receiving unit;The medium unit with anti-fingerprint coating solution is adsorbed in the inside winding between the discharging unit and receiving unit, the medium unit is continuously provided to the evaporation unit by the action of the discharging unit and receiving unit, so that the anti-fingerprint coating solution in the medium unit is heated and evaporated onto the target film material.The anti-fingerprint film raw material continuous supply and deposition system for winding vacuum coating provided by the application adopts evaporation organic medium mode instead of traditional pill evaporation feeding mode, which can realize uninterrupted anti-fingerprint film raw solution supply, not only guarantees continuous industrial production, but also avoids the phenomenon that traditional evaporation blocking mode causes coating chamber to be contaminated due to frequent replacement of AF pills, greatly improves enterprise production efficiency and improves product economic benefits.

This application discloses a method and apparatus for synergistic optimization of the overall performance of back-end compatible oxide transistors. The method includes: performing a preset standard cleaning operation on substrates of different materials, defining gate electrode patterns using photolithography or electron beam lithography, depositing different metal materials using electron beam evaporation or magnetron sputtering, and forming the desired gate electrode structure using lift-off or etching; depositing a gate dielectric layer on the bottom gate using a preset plasma-enhanced atomic layer deposition strategy, and setting the plasma power and the composition ratio of the oxide semiconductor to deposit an amorphous oxide semiconductor active layer based on the plasma power and composition ratio, combined with the plasma-enhanced atomic layer deposition strategy; isolating the device using a dry etching strategy and / or a wet etching strategy, defining the source / drain regions by photolithography, and depositing source / drain metals using sputtering or electron beam evaporation to optimize the overall performance of the back-end compatible oxide transistor.

This invention belongs to the field of thermal barrier coating technology for aero-engines, and relates to an erbium-cerium dual rare earth modified europium zirconate thermal barrier coating material and its preparation method. The molecular formula of the thermal barrier coating material is (Er x Ce y Eu (1‑x‑y) The erbium-cerium dual-rare-earth modified europium zirconate thermal barrier coating is prepared by electron beam physical vapor deposition (EBPV) with x = 0.05~0.2 and y = 0.1~0.3. The deposition process parameters are: electron beam current intensity 1.5-1.7 A; sample temperature 950-1050℃; evaporation time 30-60 min. The evaporation time is controlled to obtain an erbium-cerium dual-rare-earth modified europium zirconate thermal barrier coating on a rotating sample. The thermal barrier coating material of this invention has a coefficient of thermal expansion close to that of YSZ and exhibits low thermal conductivity. Furthermore, the use of electron beam physical vapor deposition to prepare the erbium-cerium dual-rare-earth modified europium zirconate thermal barrier coating results in a columnar crystal structure and good lifespan. This invention can reduce the thermal conductivity of the coating, increase its service temperature, and address the problem of insufficient coating service life.

This utility model discloses an anti-clogging salt leg device for a high-solids-content material evaporation system, belonging to the technical field of chemical evaporation and crystallization equipment. It includes a salt leg with a rinsing unit, a lateral extraction outlet on the lower side wall, and a reflux port at the bottom. The lateral extraction outlet is connected to an extraction pump via a lateral extraction pipe. The pump's output includes a first outlet and a second outlet, with the first outlet connected to the reflux port. The axis of the lateral extraction pipe forms an angle α with the axis of the salt leg, where α is 30-45°. Simultaneously, the vertical distance from the axis of the lateral extraction outlet to the bottom of the salt leg is 1 / 3-1 / 2 of the total height of the salt leg. This utility model uses a combination of the lateral extraction outlet and bottom reflux to synergistically suppress clogging, limiting the installation angle and height of the lateral extraction pipe, synergistically reducing the vertical flow velocity of the slurry, enhancing the mixing effect of the slurry, reducing the risk of crystal deposition clogging the lateral extraction outlet, improving crystal quality, and effectively avoiding salt leg bridging and clogging problems caused by the gradual accumulation of crystals.

This invention discloses a method for preparing rare-earth oxide / gallium oxide polycrystalline thin films with magnetoresistance effect. The method includes: preparing a deposition raw material, wherein the deposition raw material is a rare-earth oxide / gallium oxide composite particle with a core-shell structure, the core of which is composed of La... 1‑x Ca x TmO3 rare earth oxide precursor powder; substrate pretreatment; composite particles placed in the evaporation boat of a thermal resistance evaporation apparatus, allowing the evaporation raw material to melt and evaporate, depositing on the substrate surface to form a wet film; finally, flash calcination under oxygen-rich conditions of 50%~95% to obtain a polycrystalline thin film. This invention uses a single core-shell structure composite particle as the evaporation source, achieving synergistic evaporation of rare earth oxides and gallium oxide, solving the problems of component fractionation of multi-component materials and evaporation source explosion and splashing. The resulting thin film has high crystal quality and significant magnetoresistance effect, and the equipment is simple, low-cost, and conducive to large-scale production.

This invention relates to a metal-organic chemical vapor deposition (MOCVD) evaporation spray apparatus, specifically for thin film deposition technology. The apparatus includes an evaporation tube and an electric heating device. The evaporation tube is designed for reciprocating motion, converging at its end into a linear spray nozzle. A temperature controller is mounted on the evaporation tube, and grooves are formed on its inner wall. This design increases the tube length within a limited space, significantly extending the airflow path and prolonging the flow time, thus better maintaining gas temperature and ensuring complete pyrolysis and evaporation of the organic source. The keyways within the evaporation tube increase the tube wall area, allowing the atomized gas to contact a larger evaporation surface, accelerating the evaporation and pyrolysis of the organic source within the tube, and improving the atomization effect. The segmented temperature control system of this invention can dynamically monitor temperature changes, achieving accurate temperature control.

The application discloses an asymmetric super-wetting Janus film and a preparation method and application thereof, and belongs to the technical field of photo-thermal conversion materials and seawater desalination. The Janus film has a three-dimensional porous structure of a foam copper base; one side surface of the foam copper base has an exposed super-hydrophilic layer, and the super-hydrophilic layer comprises needle-shaped nano-structured copper oxide; the other side surface of the foam copper base has an exposed photo-thermal super-hydrophobic layer, and the photo-thermal super-hydrophobic layer is a fluorinated ethylene propylene-laser-induced graphene composite layer. The structure solves the problems of lack of through holes and easy salt deposition of a traditional laser-induced graphene film, realizes the cooperation of efficient water supply from the bottom and efficient photo-thermal evaporation at the top, and exhibits excellent salt deposition resistance and various wastewater purification capabilities, and the treated water quality meets the drinking water standard, so that the Janus film has great application value in the field of solar interfacial evaporation.

This invention relates to an inorganic perovskite thin film, its preparation method, and a solar cell. The method includes the following steps: S1: forming a first thin film through a first vapor deposition process; S2: annealing the first thin film to obtain a second thin film; S3: forming a third thin film on the second thin film through a second vapor deposition process; and S4: annealing the second thin film and the third thin film to obtain the inorganic perovskite thin film; wherein, in the first vapor deposition process, the raw materials used for evaporation include cesium bromide and lead iodide; and in the second vapor deposition process, the raw materials used for evaporation include cesium iodide and lead iodide. The inorganic perovskite thin film prepared by the method of one embodiment of this invention, compared with existing inorganic perovskite thin films, improves the phase stability of the perovskite structure without affecting the light absorption range of the prepared solar cell, and simultaneously improves the photoelectric conversion efficiency of the cell.

The application relates to a preparation method of a carbon nanotube-based field effect tube sensor and the sensor, and relates to the fields of nanomaterials and biosensing technology, and comprises the following steps: preparing a carbon nanotube conductive channel on a substrate, and forming a source electrode and a drain electrode at two ends of the carbon nanotube conductive channel; depositing a passivation layer above the carbon nanotube conductive channel and the source electrode and the drain electrode; performing opening processing on the passivation layer to expose a functional area of the carbon nanotube conductive channel; depositing a gold nanoparticle layer on the functional area after the opening is completed through a self-alignment deposition process and an electron beam evaporation mode; and fixing aptamers on the surface of the gold nanoparticle layer through a gold-sulfur bond to complete functionalization preparation of the biosensor. The application solves the problem of high loss rate of gold nanoparticles, and improves the batch uniformity and detection performance of the sensor.

A fixing device and a vapor deposition apparatus for a vapor-deposited substrate are disclosed. The fixing device for the vapor-deposited substrate may include a support frame, which is configured to be parallel to a first plane and form an annular shape along the extension direction of the edge region; the support frame forms a first opening for exposing the vapor deposition area, and the support frame has a bearing surface on one side in a first direction for supporting the edge region, the first direction being perpendicular to the first plane. This invention relates to the field of vapor deposition technology and provides a fixing device and a vapor deposition apparatus for a vapor-deposited substrate. The annular support frame supports the vapor-deposited substrate, eliminating the need for a crossbeam, and the first opening completely exposes the vapor deposition area, increasing the effective area for substrate layout and improving production capacity.

This invention discloses a real-time deformable shielding system and method for rotating substrate coating, belonging to the field of coating technology. The system includes a substrate rotation mechanism, comprising a rotating stage for supporting the substrate, a rotation driver, and an angle sensor; the output of the rotation driver is connected to the rotating stage; the angle sensor is mounted on the central rotation axis of the rotating stage; a shielding plate assembly is disposed between the evaporation source and the substrate; the shielding plate assembly includes a fixed support, multiple fan-shaped blades, and multiple motors; the multiple fan-shaped blades are uniformly distributed circumferentially on the fixed support; the outputs of the multiple motors are connected one-to-one with the multiple fan-shaped blades; a controller, the input of which is connected to the angle sensor, and the output of which is connected to the motors. This invention can precisely control the spatiotemporal distribution of the deposition beam, thereby effectively solving the problems of radial uniformity and compositional uniformity in the coating process.

This invention relates to coating spectacle lenses (3) by physical vapor deposition (PVD). A method for physical vapor deposition is presented, comprising: providing a crucible containing a first evaporation material (41) and a second evaporation material (42), wherein the first evaporation material has a first vapor pressure and the second evaporation material has a second vapor pressure different from the first vapor pressure, wherein the ratio of the exposed surface of the first evaporation material to the exposed surface of the second evaporation material in the crucible is adapted to offset the vapor pressure difference between the first evaporation material and the second evaporation material; and simultaneously evaporating the first evaporation material and the second evaporation material from the same crucible. This disclosure further relates to a crucible for physical vapor deposition and a physical vapor deposition system, particularly for coating optical surfaces such as spectacle lenses.

A motion control mechanism and coating method for protective coating of Roots pump rotors are disclosed, relating to the field of material processing technology. The main rotating disk comprises two large disks arranged opposite each other, and the self-rotating disk comprises two sets of small disks, evenly installed around the two large disks. Each small disk can rotate simultaneously with the main rotating disk. Threaded fasteners are detachably fixed at the center of their respective small disks. Two horizontally corresponding threaded fasteners clamp and fix the Roots pump rotor shaft end. A flexible shielding film is detachably fixed and covers the non-coated area. Through adaptation and optimization of high-current ion-enhanced electron beam evaporation coating technology, combined with a multi-station motion control mechanism capable of achieving horizontal rotational composite motion, the shielding effect during the coating process is eliminated. This allows for the simultaneous and uniform deposition of protective coatings on multiple Roots pump rotors, balancing coating quality and production efficiency.

This invention provides a vapor deposition apparatus, belonging to the field of vacuum coating technology. The vapor deposition apparatus includes a vapor deposition chamber and an evaporation source assembly. The evaporation source assembly is partially disposed within the vapor deposition chamber and includes an evaporation source cavity, an evaporation source, a gate valve, and a vacuum pump. The evaporation source cavity is located within the vapor deposition chamber, and the evaporation source is located within the evaporation source cavity. The evaporation source cavity is connected to both the gate valve and the vacuum pump. The gate valve controls the connection and isolation between the vapor deposition chamber and the evaporation source cavity, and the vacuum pump is used to evacuate the evaporation source cavity. The vapor deposition apparatus provided by this invention features an independent evaporation source cavity. The gate valve can be closed to completely isolate the evaporation source cavity from the vapor deposition chamber, confining active lithium vapor within the independent evaporation source cavity. This prevents leaked lithium vapor from contacting the vapor deposition chamber and causing safety accidents, ensuring the stability and safety of the lithium vapor deposition process.

The invention discloses an evaporation device for capacitor metallized film processing, relates to the field of plating process equipment, and solves the problems that when an existing evaporation device for capacitor metallized film processing is used, a cooling area cannot be flexibly adjusted according to needs, so that part of cooling energy is wasted, and the coating efficiency is affected. Comprising a machine body, a cooling mechanism, a conveying mechanism and an evaporation mechanism, the cooling mechanism comprises a cooling roller and a cooling pipe, and the evaporation mechanism comprises an evaporation boat. And the situation that external gas enters the machine body along with the film is reduced, aluminum steam is generated through an evaporation boat on the evaporation mechanism, the bottom of the film is coated, meanwhile, the steam is prevented from reaching the upper side area of the film, and the coating efficiency is improved.

This disclosure provides a photomask and photomask assembly, and vapor deposition equipment. The photomask includes a blocking portion and multiple effective openings. The blocking portion includes a mask pattern area and a welding area. The welding area includes a plurality of overlapping units arranged at intervals along at least one edge of the mask pattern area. Each overlapping unit includes at least one overlapping portion. The overlapping portion has an extending length in the direction from the mask pattern area to the welding area. The overlapping portion has a connecting end and a welding end in its length extending direction. The welding end is located on the side of the connecting end away from the mask pattern area. The welding end has a first width in the direction perpendicular to the length extending direction of the overlapping portion. The first width is the minimum limit value of the clamping width of the screen tensioning equipment. The distance between two adjacent effective openings is greater than the first width. And / or, a plurality of virtual openings are also provided on the blocking portion. The photomask and photomask assembly and vapor deposition equipment provided by this disclosure can improve the yield of vapor-deposited products.

A deposition source for a vacuum deposition apparatus is provided, in which, when a crucible filled with a deposition material is heated in an induction heating manner, the entire crucible including a lid is in a top heating state. The deposition source (DS1) includes a crucible (4) filled with a deposition material (Vm), a lid (5) that blocks an upper surface opening (4a) of the crucible, and an induction heating coil (6) disposed around the crucible and the lid. An outlet portion (51a) that allows the deposition material vaporized or sublimated by heating to pass through is provided on the lid. A protrusion (52b) having a corner portion is provided on an outer surface of the lid.

A batch coating protection device and method suitable for different blades, relates to the technical field of vacuum coating and surface engineering. The coating chamber is equipped with a heater, the motion control mechanism is arranged at the top of the coating chamber, and is connected with a bias power supply. The non-shielded modular clamp is detachably installed between the motion control mechanisms, the evaporation source is arranged at the bottom of the coating chamber, the vacuum and gas supply system is connected with the coating chamber for vacuumizing, and is respectively connected with the coating chamber and the high-current ion source for supplying reaction gas and working gas. The water supply and power supply system cools and dissipates heat for the high-current ion source and the electron gun, and simultaneously provides working power. The control system realizes real-time control and adjustment of various process parameters. Through optimization of the high-current ion enhanced electron beam evaporation coating technology, and combined with the motion control mechanism of planetary rotation and revolution to avoid mutual shielding problem, high-quality and rapid deposition of protective film on different shaped blades can be realized.