468 results about "Evaporation (deposition)" patented technology

The invention relates to a multi-layer composite black film and a preparation method thereof. The multi-layer composite black film is formed by sequentially stacking a base material layer, a multi-layer film system and a top covering layer, the multi-layer film system is formed by alternately stacking a plurality of absorption layers and a plurality of oxide layers, the number of the layers is 7-30, an initial layer is an oxide layer, the refractive indexes of the oxide layers are the same (1.4-1.5), the thickness ratio of the oxide layers to the absorption layers is larger than 2, and the thickness ratio of the top covering layer to the absorption layers is larger than 1. And the thicknesses of the two layers are increased and then reduced from the substrate layer to the top covering layer. A buffer layer with gradually changed oxygen content is arranged between the oxide layer and the absorption layer, and both the oxide layer and the top covering layer are made of silicon dioxide. The preparation method comprises the following steps: providing the substrate layer, alternately depositing the absorption layer and the oxide layer by using a magnetron sputtering or electron beam evaporation process to form a multilayer film system, then forming the top covering layer, controlling parameters such as vacuum degree, power, temperature and the like during deposition, and forming the buffer layer in the same cavity. The multilayer composite black film has the inner surface reflectivity of less than 1% and the appearance surface reflectivity of less than 5%, and is simple in structure and low in preparation cost.

The invention belongs to the technical field of seawater desalination, and particularly relates to a solar efficient photo-thermal conversion type floating ball and seawater evaporation application thereof. Specifically, the solar efficient photo-thermal conversion type floating ball comprises a spherical inner core and a photo-thermal conversion material wrapping the spherical inner core, and the density of the spherical inner core is 25-500 kg / m < 3 >; wherein the photo-thermal conversion material is coated at least twice. According to the solar efficient photo-thermal conversion type floating ball, the photo-thermal conversion material is coated at least twice, the loading capacity is improved, meanwhile, a porous network structure is formed, and the seawater evaporation rate can be increased; sunlight irradiates on the floating ball, light energy is converted into heat energy under the action of the surface photo-thermal conversion material, salt is deposited on the floating ball along with water evaporation, and surface salt deposition is automatically and dynamically removed through the free rotating motion of the floating ball on the water surface under the action of centrifugal force and water flow scouring. And self-recovery of the evaporation process and continuous seawater evaporation are realized.

Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The adjacent metal-containing overhang structures defining each sub-pixel of the sub-pixel circuit of the display provide for formation of the sub-pixel circuit using evaporation deposition and provide for the metal-containing overhang structures to remain in place after the sub-pixel circuit is formed (e.g., utilizing the methods of the fifth, sixth, or seventh exemplary embodiments). Evaporation deposition may be utilized for deposition of an OLED material and cathode. The metal-containing overhang structures define deposition angles, i.e., provide for a shadowing effect during evaporation deposition. The encapsulation layer of a respective sub-pixel is disposed over the cathode with the encapsulation layer extending under at least a portion of each of the adjacent metal-containing overhang structures and along a sidewall of each of the adjacent metal-containing overhang structures.

The invention relates to the technical field of vacuum physical vapor deposition, and provides a preparation method of a porous structure low-density IWO evaporation target material based on current calcination, which comprises the following steps: firstly, carrying out current calcination on raw materials, promoting WO3 crystal grains to preferentially grow along the 111 crystal orientation by utilizing a Joule effect, forming a long-range ordered structure, increasing the density after calcination, and then crushing to retain the crystal form, so as to obtain the low-density IWO evaporation target material with the porous structure. The preparation method comprises the following steps of: adding a 15wt% PVA ethanol solution, then carrying out ball-milling cold isostatic pressing molding, then carrying out distributed sintering, volatilizing PVA to form a porous framework through first-step sintering, carrying out second-step sintering to obtain crystal grains with a continuous porous structure, and finally carrying out RPD film coating under specific parameters, so that the powder falling rate is reduced, and the TCO film is good in uniformity; through the processes of current calcination, crushing, binder forming and sintering, on the premise that the low density of the target material is kept, cooperative control over directional connection of a porous structure and crystals is achieved, the powder falling rate is reduced by 60%, the regular porous structure and ordered crystal arrangement effectively disperse thermal stress, and structural collapse is avoided; the evaporation stability is improved, and the surface roughness is reduced to Ralt; the evaporation rate fluctuates by + / -5%, and the film uniformity reaches + / -2.0%.

The invention belongs to the technical field of photoelectric detection, and discloses a molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector and a preparation method and application thereof, and the molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector is prepared by stripping single crystal molybdenum ditelluride onto an oxide layer silicon substrate through a mechanical stripping method to obtain a molybdenum ditelluride nanosheet; a nickel ditelluride nanosheet is obtained through a chemical vapor deposition method; the molybdenum ditelluride nanosheet is transferred to the nickel ditelluride nanosheet through a PVA dry transfer method to form an overlapped part, and a molybdenum ditelluride / nickel ditelluride heterojunction is formed; and preparing electrodes at two ends of the molybdenum ditelluride / nickel ditelluride heterojunction through electron beam evaporation or thermal evaporation. The photoelectric detector utilizes a built-in electric field generated by a two-dimensional material heterojunction interface to effectively improve the photoelectric conversion efficiency and response speed of a visible light wave band.

The invention relates to the technical field of PVD coating, in particular to a PVD vacuum coating machine which comprises a vacuum machine pump set, the top end of the vacuum machine pump set is fixedly connected with a fixing table, and the top end of the fixing table is fixedly connected with a vacuum coating tank; and the workpiece placing and rotating mechanism comprises a motor fixedly connected to the inner top wall of the vacuum machine pump set, the output end of the motor is fixedly connected with a rotating plate, and a supporting frame is detachably arranged at the top end of the rotating plate. In the detection assembly, when gas containing plating materials passes through a detection box, light rays emitted by a lamp panel can be shielded and absorbed, a photoresistor board detects the light ray intensity change, converts the light ray intensity change into electric signals and transmits the electric signals to a PLC, the PLC controls the power of an evaporation source, a motor and a vacuum arc ion source according to the signals, and therefore self-adaptive adjustment of parameters is achieved. And parameters are adaptively adjusted according to actual conditions, so that plating material supply is accurately matched with actual requirements.

The invention relates to the technical field of photoelectrocatalysis, and aims to provide a Ta3N5-based photoelectrode based on a vapor deposition technology and a preparation method of the Ta3N5-based photoelectrode. According to the photoelectrode, quartz glass serves as a substrate, and the substrate is provided with a multi-layer film structure which is formed on the basis of magnetron sputtering, electron beam evaporation, thermal nitriding treatment, electrochemical deposition and coating; the multilayer film structure sequentially comprises a first Ti metal layer, a Pt conductive metal layer, a Ti < x > Al < y > alloy layer, a Ta3N5 layer, a NiFeCoOz cocatalyst layer and MNPs nano metal particles from bottom to top. The use amount of precious metal can be greatly saved, the preparation cost is reduced, and the application range is expanded; the mobility of photoelectrons can be improved, the transport of photon-generated carriers can be improved, and the photoelectric utilization efficiency can be greatly improved; and the energy loss between two photo-thermal application interfaces is greatly reduced, so that the photo-thermal utilization efficiency of the single photoelectrode is improved.

The invention relates to a memristor and a preparation method thereof. The preparation method comprises the following steps: providing an insulating substrate with a bottom electrode formed on the surface; depositing an aluminum oxide thin film on the bottom electrode by adopting electron beam evaporation under a room temperature condition to form a resistive function layer, and not performing high-temperature annealing treatment after deposition is completed, so that a primary oxygen vacancy defect is reserved in the thin film; and then depositing a top electrode on the resistive function layer through thermal evaporation or electron beam evaporation to obtain the memristor. The resistive function layer is an aluminum oxide film which is not densified through annealing, and internal defects of the resistive function layer provide a channel for metal ion migration, so that the reversible resistive characteristic is achieved. The memristor device is simple in structure and suitable for normal-temperature process preparation, the stable resistance switching behavior can be achieved, excessive densification of a film layer and thermal damage of an ITO electrode interface caused by high-temperature annealing are avoided, and the memristor has high cycle durability and nonvolatile data retention capacity and has the stable bipolar resistance change characteristic.

The invention discloses a perovskite material solution, a perovskite film and a preparation method and application thereof, and the preparation method of the perovskite material solution uses a high-boiling-point solvent as an independent additive, specifically, after a perovskite precursor is completely dissolved and filtered, the high-boiling-point solvent (a single or composite system) is quantitatively added, and the perovskite material solution is prepared. Subsequent preparation of the perovskite film can achieve the following effects by accurately controlling the vacuumizing rate and the processing time: (1) the crystallization window period is prolonged due to the slow evaporation characteristic of the high-boiling-point solvent, perovskite crystal grains are promoted to grow orderly, a uniform and compact film microstructure is formed, internal stress accumulation caused by rapid crystallization is effectively relieved, and the performance of the perovskite film is improved; the cracking risk is obviously reduced; and (2) solvent molecules are preferentially enriched in a grain boundary region in a deposition process, and uncoordinated Pb < 2 + > defects are passivated through coordination, so that the defect density of the thin film is reduced, and the photoelectric conversion efficiency of a device is improved.

A surface-enhanced Raman scattering substrate, including: a base layer; a nanopillar structure layer, which is formed on the base layer by means of nanoimprint lithography, and has a nanopillar array structure; and a thin film, which covers and is formed, by means of an oblique deposition evaporation process, on the top of the nanopillar array structure and at least one vertical side wall of the nanopillar array structure, wherein the thin film has a surface-enhanced Raman scattering effect and has an oblique angle.

The invention relates to the technical field of kits, in particular to a MoS2 back gate field effect transistor based on a wet transfer process and a preparation method of the MoS2 back gate field effect transistor. The MoS2 back gate field effect transistor is formed by sequentially arranging a silicon-based substrate, a SiO2 insulating layer, a MoS2 conducting channel layer and an Ag source drain electrode from bottom to top; a high-quality single-layer MoS2 thin film is prepared through a chemical vapor deposition (CVD) method, PMMA is adopted as a supporting layer, clean Van der Waals contact of the MoS2 thin film and a SiO2 / Si substrate is achieved through a wet transfer process of NaOH solution etching, deionized water cleaning and acetone stripping of the supporting layer, and finally a source electrode and a drain electrode are prepared by combining photoetching and thermal evaporation processes. According to the method, the problems of pollutant residues and traps of an interface between MoS2 and the substrate in the traditional process are effectively solved, the carrier mobility, transconductance and on-state current of the device are remarkably improved, the sub-threshold swing is reduced, and the method is suitable for manufacturing a two-dimensional material integrated circuit device with low power consumption and high performance.

The invention relates to the technical field of solar cells, in particular to a wide-band-gap perovskite solar cell and a preparation method thereof. The preparation method comprises the following steps: preparation of the ITO layer, O2-plasma treatment of the ITO layer, preparation of the hole transport layer, preparation of the perovskite light absorption film layer, coating of PEAI post-treatment salt, preparation of the thermal evaporation C60 electron transport layer, preparation of the SnO2 electron transport layer by an atomic layer deposition method, plating of the ITO transparent conductive electrode by a magnetron sputtering technology, preparation of the metal gate line, and evaporation of the MgF2 antireflection layer. The organic fluorescent material NPBI2 which absorbs ultraviolet light and converts the ultraviolet light into visible light is doped into the perovskite light absorption layer, so that the damage of the ultraviolet light to perovskite is avoided, the perovskite can absorb the visible light to generate power and improve the photoelectric conversion efficiency, and the organic fluorescent material can passivate crystal defects in the perovskite light absorption layer and improve the quality of the perovskite thin film. And the carrier lifetime is prolonged.

The invention belongs to the technical field of semiconductor materials and devices, and discloses a low-temperature thermal evaporation deposition tellurium / germanium heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a germanium substrate, a tellurium thin film, a metal top electrode and a metal bottom electrode, the tellurium thin film is a polycrystalline tellurium film layer containing a micron-sized large domain, the surface roughness is lower than 1nm, and the tellurium thin film is in close contact with the germanium substrate to form a heterojunction; the metal top electrode is a platinum / gold laminated electrode, and the metal bottom electrode is an indium gallium alloy / copper foil electrode. The tellurium thin film with large crystal domain and low roughness grows on the germanium substrate through a-low temperature (-80 DEG C to-160 DEG C) thermal evaporation deposition process, and the electrode is prepared by combining a micro-nano processing technology. Compared with traditional molecular beam epitaxy, pulse laser deposition and other methods, the method is low in process cost and compatible with the integrated circuit technology, and the obtained heterojunction photoelectric detector has the excellent rectification characteristic and infrared light response and is suitable for large-scale preparation and practical application.

The invention relates to the technical field of ultraviolet photoelectric detectors, in particular to an MSM structure ultraviolet photoelectric detector based on p-Si / Ga2O3 / ZnO and a preparation method of the MSM structure ultraviolet photoelectric detector. Comprising a p-Si substrate; the Ga2O3 thin film layer is arranged on the p-Si substrate; the ZnO thin film layer is arranged on the Ga2O3 thin film layer; and the interdigital electrode is arranged on the ZnO thin film layer. The interdigital electrode is a Ti interdigital electrode, the width of the interdigital electrode is 50-100 m, the length of the interdigital electrode is 600-1000 m, and the electrode interval is 50-100 m; and the p-Si substrate is a double-surface polished boron-doped p-Si substrate. In the preparation process, magnetron sputtering and thermal evaporation deposition are adopted to prepare the photoelectric detector. The method has the advantages that manufacturing cost is reduced; the suppression ratio of UV / Vis-NIR light is improved, so that the device has higher spectral selectivity; the detection wavelength range is widened, and sensitive detection of UVA-UVC is realized.

The utility model belongs to the technical field of crucibles, and particularly relates to a perovskite evaporation source crucible assembly which comprises a quartz crucible with an opening at one end, at least one heat conduction piece arranged in the quartz crucible and a filtering piece arranged in the quartz crucible and located above the heat conduction piece. And the filtering piece covers the upper opening of the quartz crucible. According to the utility model, through the arrangement of the honeycomb-shaped heat conduction member and the filtering member, the original perovskite raw material is easier to volatilize, the loss of heating power is reduced, the time for stabilizing the deposition rate is shortened, and the large-scale mass production is facilitated; the filter screen is additionally arranged, so that raw materials are more conveniently prevented from splashing to pollute other raw materials, large blasting-boiling particles can be filtered out and splashed to a substrate in the evaporation process, a film layer grows finer and smoother, the quality is better, and defects caused to the film layer are avoided.

The invention provides a mid-infrared Cr2O3 protective film and a preparation method thereof. The film is suitable for outer layer protection of a mid-infrared band film. Metal chromium is used as a raw material, a proper amount of oxygen is filled in the reactive evaporation deposition process, meanwhile, plasma is added for assistance, the oxidation reaction is enhanced, the film strength is improved, and a single-layer Cr2O3 film is formed on the surface of the mid-infrared high-transparency optical substrate through the oxidation reaction; based on a spectrum test result, constructing a dispersion model, and accurately fitting the optical constant of the Cr2O3 film in the middle-infrared band; constructing a relation between the thickness of the Cr2O3 protective layer and transmittance attenuation according to the optical constant; cr2O3 with a proper thickness is selected to prepare a protective layer on the basis of a functional film layer according to the performance requirements of the optical element. The invention aims to provide a Cr2O3 protective film suitable for a middle-infrared band and a preparation method thereof. The film has excellent environmental adaptability such as high strength, salt mist resistance and high-temperature oxidation resistance.

The invention relates to a preparation method of a high-quality EB evaporation target, and relates to the field of target preparation, and the preparation method comprises the following steps: loading a powder raw material into a cleaned crucible, and pre-compacting to obtain a pre-compacted crucible; putting the pre-compacted crucible into spark plasma sintering equipment, vacuumizing and pressurizing, starting auxiliary heating to raise the temperature to a thermal shock buffer temperature, stopping auxiliary heating, introducing current to raise the temperature to a sintering densification temperature, preserving heat, stopping introducing current, starting auxiliary heating to carry out speed-controlled cooling, and cooling to a stress safety cooling threshold value, so as to obtain the high-temperature-resistant and high-pressure-resistant crucible. And transferring into a program control cooling system for cooling, removing the crucible, cleaning and drying to obtain the high-quality EB evaporation target material. The prepared target material has high density and mechanical strength, internal stress is relieved, good evaporation stability and film layer uniformity are shown in the electron beam physical vapor deposition process, and the finally obtained coating is compact in structure and has high hardness and high adhesive force.

The present invention relates to a dynamic adaptive evaporation system and method. The evaporation system includes a vacuum chamber, an evaporation source, and a substrate carrier. The vacuum chamber includes an evaporation zone, a transition zone, and a deposition zone, which are sequentially connected from bottom to top. A first partition is provided between the evaporation zone and the transition zone, the center of the first partition being ventilated and provided with a first partitioning device. A second partition is provided between the transition zone and the deposition zone, the center of the second partition being ventilated and provided with a second partitioning device. An evaporation source is provided in the middle of the evaporation zone. A cooling chamber is arranged around the periphery of the transition zone, the cooling chamber being provided with a condensation ring and a cryogenic trap. A substrate carrier is provided in the upper center of the deposition zone. The evaporation method comprises the steps of establishing a dynamic pressure-stratified vacuum environment, preheating, and evaporation. The evaporation system can dynamically pressure-stratify the chamber using an electromagnetic barrier with an array of charged micropores. Through pressure gradient design, the system can isolate and regulate evaporated substances and byproducts in real time, resulting in low pressure fluctuations, high coating uniformity, and high material utilization.

This invention relates to a method for remote epitaxial growth of single-crystal lead-free perovskite microsheets on germanium, comprising the following steps: using CsBr and SnBr2 as source materials placed in a reaction region, using argon as a carrier gas, placing germanium-based graphene in a deposition region, and then heating to react the source materials, followed by evaporation and deposition onto the germanium-based graphene to form single-crystal lead-free perovskite microsheets. The method of this invention can obtain perovskite microsheets with good orientation and is environmentally friendly. Furthermore, germanium is a mature semiconductor material with well-established wafer fabrication, cleaning, and surface treatment processes, making large-scale production possible and providing a new path for perovskite to move from the laboratory to high-performance, multifunctional integrated optoelectronic devices.

A preparation method of a germanium substrate 2-2.3 mu m short wave low reflection film system comprises the following steps: S1, cleaning of the germanium substrate as a lens and an accompanying plating piece, the accompanying plating piece being a round piece and a wedge-shaped piece; S2, loading the lens into a tool clamp, and hanging the tool clamp into a cavity; S3, vacuumizing and cleaning a Hall ion source; S4, sequentially coating each film layer on a first surface of the lens according to 34.8 nm SiO / 64.3 nm Ge / 52.2 nm ZnS / 272.8 nm SiO, electron beam heating evaporation of SiO film layers and Ge film layers, resistance heating evaporation of ZnS film layers, a deposition rate of the SiO film layer being 0.6 nm / s, a deposition rate of the Ge film layer being 0.3 nm / s, a deposition rate of the ZnS film layer being 0.8 nm / s, and ion source assisted deposition; S5, cooling the cavity, and taking out the tool clamp together with the lens; and S6, repeating steps S1 to S5 to coat the same film system on a second surface of the lens, wherein the wedge-shaped piece is not cleaned when repeating step S1, and is not put into the tool clamp when repeating step S2.

The invention relates to a film coating device, a film and a preparation method of the film. The film coating device comprises a vacuum chamber, a first-stage rotating disc, a second-stage rotating disc and a film coating source, wherein the first-stage rotating disc, the second-stage rotating disc and the film coating source are located in the vacuum chamber; according to the preparation device system, through the arrangement of the first-stage rotating disc and the second-stage rotating disc, deposition during thin film evaporation has a certain periodic characteristic, so that the expected scattering effect is generated, and the thickness of the scattering thin film only needs several microns when the expected scattering degree is generated; in addition, through the arrangement of the film coating source, the thin film with the high scattering rate can be obtained, the hardness and adhesive force of the obtained thin film can be improved, and the quality of the thin film is improved.

The invention discloses an automatic process control method and an automatic process control system for an evaporator, which are suitable for a thin film deposition process under various materials and multi-process conditions. The system comprises a process initialization module, a coating control execution module and a post-processing and data feedback module. The process initialization module is used for parameter configuration, environment preparation and starting condition confirmation before an evaporation task is completed, and it is ensured that the system has basic operation conditions for entering a coating stage; the coating control execution module is used for completing electronic gun power control, plating pot rotating speed adjustment, film thickness real-time detection and thickness closed-loop adjustment in the evaporation process, and dynamic accurate control over the coating thickness is achieved; the post-processing and data feedback module is used for automatically turning off an electronic gun, cooling a substrate, breaking vacuum of a cavity, recording process data and updating control parameters after the coating task is finished, so as to ensure the safe shutdown of equipment and the continuous optimization capability of the system; the system can automatically complete preparation before evaporation, coating execution and post-treatment operation.

The present invention discloses a vertical nanometer air channel diode and its preparation method, belonging to the field of semiconductor device technology. The structure of the present invention comprises a substrate, a buffer layer, an emitter, a dielectric layer and a receiving electrode layer stacked in sequence from bottom to top; the emitter has a doping concentration of 10 18 cm ‑3 The above n-type highly doped gallium nitride or AlGaN / GaN heterojunction increases the number of carriers and improves the energy band characteristics through two-dimensional electron gas emission at the n-type highly doped gallium nitride or AlGaN / GaN heterojunction interface, achieving a lower turn-on voltage and a higher emission current. The fabrication process of the present invention utilizes conventional plasma-enhanced chemical vapor deposition, photolithography, electron beam evaporation, stripping, and dry etching techniques, without relying on high-precision and high-cost nanofabrication techniques. It offers advantages such as low cost and ease of integration, making it suitable for mass production of wafer-scale nanometer air channel diode arrays.

The invention relates to a metal mask supported by a glass substrate for manufacturing an organic light emitting diode display. The mask includes a glass substrate located only outside the display area, an open-cell metal layer for providing structural stability, and forming apertures for material deposition in the display area. The perforated metal layer can be formed by methods such as electroforming, sputtering, chemical vapor deposition, evaporation or atomic layer deposition, and the used metal comprises a material with a low thermal expansion coefficient, such as invar steel, super invar steel, kovar alloy, 42 alloy, nickel, tungsten, molybdenum, tantalum or rhenium. The mask supports two structural forms: a fine metal mask and an open metal mask which are respectively used for evaporation of red, green and blue sub-pixels and a common layer. The method can be used for batch processing of a plurality of micro organic light-emitting diode display substrates, and can also be used for full-coverage processing of a single active matrix organic light-emitting diode display substrate.

The invention discloses a super-thick amorphous carbon coating plated on a lead screw raceway and a preparation method of the super-thick amorphous carbon coating. The super-thick amorphous carbon plating layer is a laminated plating layer and comprises a chromium bottom layer, a carbon-chromium binary transition layer and an amorphous carbon upper cover layer which are sequentially plated on the lead screw, and the preparation method of the super-thick amorphous carbon plating layer comprises the following steps: carrying out argon plasma etching on the lead screw containing a raceway groove; depositing a chromium bottom layer by adopting multi-arc evaporation; depositing a carbon-chromium binary transition layer by adopting multi-arc evaporation; and finally, adopting magnetron sputtering-multi-arc evaporation combined deposition to obtain an amorphous carbon upper cover layer with the thickness of 15-30 microns. The thickness of the super-thick amorphous carbon coating reaches 20-35 microns, the super-thick amorphous carbon coating has excellent bearing capacity and antifriction and wear resistance, the response speed and precision of the lead screw can be greatly improved, and the service life of the lead screw can be greatly prolonged.

The embodiment of the invention provides an alpha-Ga2O3 / Li doped NiO vertical heterojunction detector and a preparation method and application thereof, and relates to the technical field of semiconductor materials. The preparation method of the detector comprises the following steps: S1, preparing a gallium source precursor aqueous solution, and enabling the gallium source precursor aqueous solution to epitaxially grow an alpha-Ga2O3 film layer on a substrate through an atomization chemical vapor deposition technology; s2, preparing a nickel source precursor aqueous solution, adding a lithium source into the nickel source precursor aqueous solution, and epitaxially growing a Li-doped NiO film layer on the alpha-Ga2O3 film layer by using the lithium-doped nickel source precursor aqueous solution through an atomization chemical vapor deposition technology; and S3, depositing a first electrode layer on the Li-doped NiO film layer by adopting a magnetron sputtering technology, and depositing a second electrode layer on the Li-doped NiO film layer by adopting a magnetron sputtering method or depositing the second electrode layer on the alpha-Ga2O3 film layer by adopting an electron beam evaporation technology. According to the invention, the Mist-CVD technology is adopted for the first time to successfully prepare the alpha-Ga2O3 / Li-doped NiO vertical heterojunction, and the alpha-Ga2O3 / Li-doped NiO vertical heterojunction is applied to a solar-blind ultraviolet photoelectric detector.

The invention discloses an intelligent control method and system for optical coating equipment, relates to the field of intelligent control of the optical coating equipment, is used for improving the coating precision and stability of a complex multi-layer film system, and comprises the following steps: obtaining recorded data; the recorded data comprises a real-time optical signal intensity value output by an optical film thickness monitoring system in a film coating process and a deposition parameter of a current layer; determining a drift difference value according to the recorded data, and determining a drift rate according to the drift difference value; pre-judging the total drift amount of the optical film thickness monitoring system in the future deposition process according to the drift rate and the remaining layer number to be deposited; and according to the total drift distance, adjusting target optical thicknesses of the current layer and the subsequent layer, evaporation process parameters and an end point judgment basis of a monochromatic monitoring signal.

The application provides a gold catalyst particle assisted chemical vapor deposition method for realizing controllable growth of transition metal chalcogenide heterojunction nanotubes, gold nanometer particle modified silicon wafers with adjustable and uniform distribution diameters can be obtained through magnetron sputtering of gold nanometer films and high temperature annealing treatment, and the silicon wafers are used as growth substrates. In the high temperature reaction process of the chemical vapor deposition, the ratio and evaporation rate of transition metal oxide powder, sulfur powder and selenium powder and the flow and ratio of hydrogen and argon are further precisely controlled through a single / two-temperature zone high temperature furnace, and finally controllable growth of high crystal quality transition metal chalcogenide heterojunction nanotubes can be realized. Further, by controlling the temperature of the growth substrate, the type of the evaporation precursor and the evaporation rate, the growth process of the transition metal chalcogenide nanotubes can be significantly affected, and transition metal chalcogenide heterojunction nanotubes with different structural characteristics such as composition and chirality can be obtained, that is, controllable growth and directional regulation of the physical properties of the transition metal chalcogenide heterojunction nanotubes are realized.

A film formation device according to one embodiment of the present invention includes a vacuum chamber, a conveyance roller, a vapor deposition source, a monitoring section, and a control section. The conveyance roller is disposed inside the vacuum chamber and supports a film-like base material. The vapor deposition source includes: a vapor deposition boat having a storage section for storing an evaporation material to be vapor-deposited on the base material supported by the conveyance roller; and a material supply section that supplies the evaporation material to the storage section. The evaporation material stored in the storage section is melted by electrical heating of the vapor deposition boat. The monitoring section includes a camera unit that acquires images of the molten evaporation material in the storage section. The control section controls, based on the output of the monitoring section, at least one of: the supply rate or the supply position of the evaporation material in the vapor deposition source to the storage section; and the electrical power supplied to the vapor deposition boat.

The invention discloses a preparation method of an efficient graphene-carbon nanotube transistor sensor and a method for detecting Hg < 2 + > by using the sensor, and the preparation method of the efficient graphene-carbon nanotube transistor sensor comprises the following steps: S1, preparing graphene; s2, transferring the graphene; s3, carrying out reactive ion etching and thermal evaporation on the gold electrode; s4, surface functional modification of the sensor; the high-quality graphene film is prepared by a chemical vapor deposition method, and is transferred to the surface of the silicon wafer on which the carbon nanotubes are pre-grown by a PMMA (polymethyl methacrylate) auxiliary transfer method to form a unique bent and curled structure, and the structure not only greatly increases the effective specific surface area of the material, but also gives full play to the synergistic effect of the graphene and the carbon nanotubes, so that the performance of the material is improved. The electrochemical activity of the sensor is obviously improved, so that the Hg < 2 + > detection sensitivity reaches a picomole level.