750 results about "Evaporation (deposition)" patented technology

A method and system is described for reducing particle contamination in a vapor distribution system. The vapor distribution system comprises a housing and a vapor distribution head comprising a plurality of openings configured to introduce a film precursor vapor to a deposition system. The housing and vapor distribution head define a plenum coupled to a film precursor evaporation system, and configured to receive the film precursor vapor from the evaporation system and distribute the film precursor vapor within the deposition system through the plurality of openings. In order to reduce particle contamination, the vapor distribution system is designed to reduce the difference, or ratio, between the pressure in the plenum and the pressure in the deposition system. For example, the plenum pressure can be less than twice the pressure in the process space, or can be less than 50 mTorr, 30 mTorr or even 20 mTorr than the pressure in the process space.

There is provided a vacuum evaporator comprising an evaporation source (10) formed out of a stacked frame structure (10A, 10B), in which the bottom frame (10A) serves as a heating part (11) and another frame (10B) serves as an evaporation flow controller (12). This vacuum evaporator causes an improvement in utilization efficiency of a deposition material (B), an enhancement in qualities of a thin film and a uniform deposition on a larger-area substrate.

A liquid metal evaporation source for use in Molecular Beam Epitaxy and related metal vacuum deposition techniques. An evaporator is maintained at a high temperature to evaporate a liquid metal, a reservoir for holding the liquid metal source is maintained at a temperature above the melting point of the metal but below the temperature in the evaporator, and a hollow transport tube connecting the evaporator and reservoir is maintained at a temperature between these temperatures. The reservoir is in the shape of a hollow cylinder with a close-fitting cylindrical piston which is used to force the liquid metal through the hollow transport tube into the evaporator. The liquid metal will not flow past the piston seal if a suitably small gap is formed between the piston and the reservoir walls wherein the surface tension of the liquid metal will exceed its hydrostatic pressure against the piston thus forming a leak-tight seal.

A high conductance, multi-tray solid precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system includes a base tray with one or more upper trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

The invention discloses a temperature control system-based evaporation temperature control method for an OLED (Organic Light Emitting Diode) organic layer. The evaporation temperature control method comprises a preheating process and an evaporation process, wherein the preheating process is divided into three temperature-rise processes with temperature gradients; the evaporation process comprises a step of controlling the temperature of an evaporation source by controlling the power of an evaporation power supply on the basis of an actually-measured deposition rate curve. According to the temperature control system-based evaporation temperature control method for the OLED organic layer, the stabilization time of the temperature of the evaporation source and the deposition rate is shortened, the use ratios of the organic materials of the evaporation source are improved, meanwhile, the degradation, the degeneration and the like of the organic materials caused when the temperature rise is too fast or the risen temperature is too high are avoided, and the production cost is lowered; by utilizing a characteristic that the evaporation rate is changed by 20-30% when the evaporation temperature is changed by 1%, the accuracy of the temperature control is improved, the stability of evaporation temperature is maintained, and the uniformity of evaporated films is improved.

The invention belongs to the technical field of optical thin-film micro-nano structures, and provides a grating preparation method through pattern transfer based on nano-imprint. The grating preparation method through pattern transfer based on nano-imprint is characterized by comprising the following steps that 1) polymers are coated on a substrate; 2) a pressing mould template is prepared; 3) the imprint process is performed: the substrate on which the polymers are coated and the pressing mould template are installed on the two imprint discs of an imprint machine, and pressurization is performed when temperature is close to polymer glassy phase change point temperature through heating so that the polymers are enabled to be fully filled with pressing mould patterns and then cooling is performed; and the pressing mould template and the substrate are separated when temperature is close to the phase change point through cooling so that a polymer mask film slot profile is obtained; and 4) micro-nano pattern transfer is performed: required grating ridge material fills in the polymer mask film slot profile by directly using an electron beam evaporation method, deposition thickness is monitored by utilizing the film thickness optical control technology, and then grating structures complementary with the mask film are formed by dissolving the polymer patterns through an organic solvent so that the gratings prepared through pattern transfer based on nano-imprint are obtained. The method is simple in the preparation technology and low in production cost.

The invention discloses a preparation method for gold-tin eutectic solder. According to the method, various metal films deposit on a CuW secondary heat sink by using the Au target and Sn target layering magnetron sputtering technique, and the gold-tin eutectic solder is formed by sintering of high temperature alloy. Compared with the prior art, the preparation method for the gold-tin eutectic solder has the advantages that the deposition rate is high, uniformity of deposited layer thicknesses can be guaranteed through rotation of a base plate in deposition, and the shortcomings that use ratios are low, plating reactions are difficult to control and thicknesses and ingredients are difficult to accurately control due to a traditional method of electron beam evaporation or layered plating are overcome.

The invention discloses a hot filament and thermal evaporation vapor deposition thin film device for material preparation. The device consists of a hot filament chemical vapor deposition activation part for activating a source gas to deposit the material and forms a combination with a thermal evaporation part. A substrate bracket does combined movement relative to the hot filament or the thermal evaporation wire or the hot filament and the thermal evaporation wire.

The invention discloses a cobaltosic oxide nanowire array based alcohol gas sensor. The alcohol gas sensor includes an insulating substrate, an electrode layer and a sensing electric conductor. The sensing electric conductor is composed of a cobaltosic oxide nano-array grows on the insulating substrate directly by a hydrothermal method. The invention also provides a preparation method of the alcohol gas sensor. The method includes: first employing the well-known thermal evaporation, sputtering or chemical evaporation deposition coating technology to deposit an electrode layer material on both ends of the insulating substrate, and controlling the thickness; and then making use of the hydrothermal method to let the cobaltosic oxide nano-array grow on the insulating substrate directly to serve as the sensing electric conductor of the gas sensor. The preparation process can generate the product with good crystallinity, has a short production period and no pollution, and avoids the difficulty of dispersing or manipulating a nano-material, thus being convenient for industrialized production. And the obtained gas sensor has excellent sensitivity to alcohol detection, and shows good selectivity, stability and repeatability.

The present teachings provide methods for forming organic layers for an organic light-emitting device (OLED) using an inkjet printing or thermal printing process. The method can further use one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein at least one of the charge injection or charge transport layers is formed by an inkjet printing or thermal printing method at a high deposition rate. The structure of the organic layer can be amorphous, crystalline, porous, dense, smooth, rough, or a combination thereof, depending on deposition parameters and post-treatment conditions. An OLED microcavity is also provided and can be formed by one of more of the methods.

The invention provides a mask plate assembly for high-precision evaporation. The mask plate assembly comprises a mask frame and at least one set of mask units arranged on the mask frame. Each mask unit is formed by two layers of structures including a mask appearance layer and a mask opening layer; and through the reasonable arrangement of the structure of the two layers of structures including the mask appearance layers and the mask opening layers, the mask plate assembly can have the higher position precision, deposition of follow-up OLED substrate surface organic materials can be well achieved, and the quality of OLED products is effectively improved.

The invention discloses a flexible electrochromic heat-insulating intelligent window film and a preparation process thereof. The window film adopts a vacuum physical vapor deposition process such as roll-to-roll magnetron sputtering or evaporation, and is sequentially plated on the surface of flexible substrates such as PET. Transparent conductive film layer, electrochromic functional film layer, solid thin film electrolyte layer, ion storage film layer, transparent conductive film layer to obtain flexible electrochromic functional window film; roll-to-roll magnetron sputtering continuous coating process, in PET Silver-containing multilayer thermal insulation window film is prepared on the surface of flexible substrates such as the Multifunctional smart window film. The flexible electrochromic heat-insulating intelligent window film of the present invention can further reduce the energy consumption of the window by more than 50% compared with the traditional low-radiation heat-insulating window film; compared with the existing electrochromic glass products, the cost is lower and the installation is more convenient And it is safer; compared with the existing flexible electrochromic film research and development technology, it has the advantages of better stability, better energy-saving and heat insulation characteristics, and the process is more suitable for mass production of large-size window films.

The method for manufacturing a hydrogen permeation barrier comprises the steps of

• a) depositing on a substrate (SUB) a layer system (LS) comprising at least one layer (L1,L2,L3);

characterized in that step a) comprises the step of

b) depositing at least one hydrogen barrier layer (HPBL) comprising an at least ternary oxide.

The apparatus comprises a sealable volume and a wall forming at least a portion of a boundary limiting said volume, wherein said wall comprises a hydrogen permeation barrier comprising a layer system (LS) comprising at least one layer, wherein said layer system comprises at least one hydrogen barrier layer (HPBL) comprising an at least ternary oxide.

Preferably, said at least ternary oxide is substantially composed of Al, Cr and O, and said depositing said at least one hydrogen barrier layer (HPBL) is carried out using a physical vapor deposition method, in particular a cathodic arc evaporation method.

Preferably, step a) comprises depositing on said substrate at least one of: an adhesion layer (AdhL), a hydrogen storage layer (HStL), a protective layer (ProtL), in particular a thermal barrier layer (ThBL), a diffusion barrier layer (DBL), an oxidation barrier layer (OxBL), a chemical barrier layer (ChBL), a wear resistance layer (WRL).

Excellent hydrogen permeation barrier properties can be achieved, and the layer system can be tailored as required by an envisaged application.

A cleaning method of a metal film forming mask is disclosed. The method includes following three steps: S1) forming an organic layer on the surface of a mask by evaporation deposition; S2) putting the mask with the organic layer obtained in the step S1 into a metal film forming cavity, and performing metal evaporation deposition; and S3) putting the mask obtained in the step S2) into an organic solution and cleaning. The method can allow the metal film forming mask to be cleaned in a cleaning machine applying organic solvents, effectively prevents inconvenience in transportation processes, and saves the cost of delivering the mask to outside to be cleaned.

The invention provides a mask plate assembly for evaporation of an OLED. The mask plate assembly comprises a mask frame and at least one mask unit arranged on the mask frame, wherein each mask unit is composed of two layers of structures including a mask layer and a mask supporting layer. By reasonably arranging the two layers of structures including the mask layer and the mask supporting layer of each mask unit, the mask plate assembly provided by the invention has a relatively high position precision, deposition of an organic material on the surface of a follow-up OLED substrate can be better satisfied, and the quality of an OLED product is effectively improved.

The invention relates to a method of processing non-refrigerated lead selenide infrared detectors, consisting in: 1) selecting the substrate and preparing same; 2) delineating and depositing multilayer interference filters; and 3) treating polycrystalline lead selenide infrared detectors on the interference filters, comprising the following steps, namely 3a) metal deposition, 3b) delineation of the metal deposit, 3c) delineation of the sensor, 3d) PbSe deposition by means of thermal evaporation, 3f) processing of sensor, 3g) thermal treatment in order to sensitise the active material, and 3h) deposition of a passivator layer on the active material. The inventive method is unique in that it can be used to treat differently-shaped non-refrigerated infrared detectors on the same substrate, including discrete elements, multielements, linear matrices, two-dimensional matrices, etc., with the responses of each being modified by design by the corresponding interference filter. The invention is suitable for low-cost infrared detectors that are used for process control, gas analyses, temperature measurements, military applications, etc.

The invention discloses a manufacturing method of a carbon nano-tube micro-channel cooler system for a radiating chip in a very-large scale integrated circuit (VLSI), which comprises the following steps of: firstly, manufacturing a pattern with required fine scale through a photoetching and peeling process; meanwhile, adhering a catalyst film obtained through an evaporation method on a surface ofthe pattern; secondly, placing a silicon wafer with the catalyst film in a heating furnace of a carbon nano-tube growth machine, growing in a high-temperature chemical vapor deposition mode to obtainthe required carbon nano-tube cluster; finally, transferring the carbon nano-tube cluster on a surface of a heating chip by adopting a transferring process through a metal coating sprayed on the surface of the carbon nano-tube, heating a sealing cover, then finishing the manufacturing process of the carbon nano-tube micro-channel cooler; then radiating through the cooling liquid flowing through an entry guide to finish the manufacturing of the carbon nano-tube micro-channel cooler system. The radiating performance is obviously improved and a more efficient radiating method is provided for radiating the chip in the integrated circuit.

The invention provides a preparation method of a perovskite battery with an n-type doped electron transport layer and a TiO2 layer. The method comprises the following steps of: (1) FTO transparent conductive glass substrate cleaning and TiO2 thin film preparation: an upper TiO2 layer is deposited on a treated FTO transparent conductive glass substrate, and the FTO transparent conductive glass substrate with the deposited upper TiO2 layer is arranged in a drying oven for later use; (2) Bis-PCBM and DMC composite film preparation; (3) spin coating treatment on the FTO transparent conductive glass substrate with the deposited upper TiO2 layer; (4) perovskite film preparation; (5) Spiro-OMeTAD thin film preparation: a Spiro-OMeTAD solution is spin coated on the FTO transparent conductive glass substrate in step (4); and (6) MoO3 and Ag electrode preparation: an MoO3 electrode and Ag electrode are formed on a Spiro-OMeTAD thin film through evaporation. With the method of the invention adopted, the electron mobility and conductivity of a thin film can be improved; the photoelectric conversion efficiency of a device can be improved; the surface of the thin film is smoother, so that the thin film can be used as a good substrate for the deposition and growth of a perovskite layer in subsequent processes; and the degradation process of the perovskite layer can be slowed down, and the stability of the device can be improved.

The invention relates to a graphene doping agent, a graphene doping process and the application of a doped graphene material. A doping process can be completed by using processes such as a dry process (including thermal evaporation and sputtering) or a wet process (including spinning, electrochemical deposition and solution soaking). By virtue of the graphene doping agent, the sheet resistance of a graphene film with a substrate is reduced from about 830 ohms to about 530 ohms on the premise that the transmittance of graphene in a visible light range is not influenced, the conductivity is improved, and the stability is high. By the adoption of the wet process or the dry process for doping, the advantages of controllability in plating thickness, controllability in doping amount, high uniformity and the like are achieved; and by the adoption of an annealing process, the doping agent is more compactly combined with the graphene, the doped graphene material is unlikely to be influenced by the environment when being subsequently used.

The invention belongs to the technical field of semiconductor photodetection, and particularly relates to a self-powered photodetector based on Cs3Cu2I5 perovskite and a preparation method thereof. The self-powered photodetector includes an insulating transparent substrate, the upper end of the substrate is provided with a carrier transport layer, a Cs3Cu2I5 light absorption layer and a first contact electrode sequentially from bottom to top, and a second contact electrode is arranged on the carrier transport layer. According to the preparation method, the carrier transport layer is prepared by adopting a magnetron sputtering or metal organic chemical vapor deposition method, the Cs3Cu2I5 light absorption layer is prepared by adopting a solution or vapor phase co-evaporation method, staggered energy band arrangement is ensured to be formed between the carrier transport layer and the Cs3Cu2I5 light absorption layer, the formation of a built-in electric field at the interface of a heterojunction is used to enable photogenerated carriers to be separated, and the detector can thus work under zero volt. The preparation method is simple, each functional layer is environment-friendly, theprepared device has a high detection rate for ultraviolet light, the ultraviolet-visible light suppression ratio exceeds 10 of the fourth power, and the application prospect is good.

The invention provides a black phosphorene-containing graphene flexible resistive random access memory and a preparation method thereof. The preparation method of the resistive random access memory comprises the steps of cleaning a Al2O3 substrate; depositing a Ni/Au composite thin film by an electron beam evaporation technology to obtain a bottom electrode layer; transferring a black phosphorene-containing graphene composite thin film material on the bottom electrode layer by a transfer method to obtain a resistive changing functional layer; forming a top electrode pattern by a photoresist patterning process, depositing a Ag, Cu or Ni thin film by the electron beam evaporation technology to form a top electrode layer, and removing and stripping photoresist to form a memory unit; and forming a coating layer pattern by the photoresist patterning process, depositing the Al2O3 thin film again by an atomic layer deposition technology to form a coating layer, and removing and striping the photoresist to form the black phosphorene-containing graphene flexible resistive random access memory. The resistive random access memory prepared according to the method is simple in structure, fast in erasure speed and small in operation voltage, non-destructive readout is achieved, and the resistive random access memory can be used for fabricating a large-area flexible device.

A physical evaporation deposition apparatus for preparing the nano-crystal silicon film of solar cell is based on the vacuum evaporation coating machine but has the physical evaporation deposit function. It method includes such steps as designing the figuration of vacuum evaporation coating machine, using ion beam method to deposit nano-crystal silicon film, and gas-phase doping to prepare the PIN structure of solar cell. Its advantage is high photoelectric conversion efficiency.

The invention provides a method for manufacturing a mask plate assembly for evaporation of an OLED. The method comprises the following steps of: S1, a step of manufacturing a mask supporting layer; S2, a step of manufacturing a mask layer; and S3, a step of assembling the mask plate assembly, wherein the mask plate assembly manufactured by virtue of the method comprises at least one mask unit, and each mask unit is composed of two layers of structures including the mask layer and the mask supporting layer. By reasonably arranging the two layers of structures including the mask layer and the mask supporting layer of each mask unit, the mask plate assembly provided by the invention has a relatively high position precision, deposition of an organic material on the surface of a follow-up OLED substrate can be better satisfied, and the quality of an OLED product is effectively improved.

The present invention provides a film coating device and a film coating method for co-evaporating a substrate to be processed. The film coating device includes: a first vapor deposition source arranged under the substrate to be processed; a second vapor deposition source arranged under the substrate to be processed. the bottom of the substrate to be processed; and a first aperture shutter, which is arranged between the first evaporation source and the substrate to be processed, and the first aperture shutter includes a plurality of apertures with different aperture densities. The hole area can be rotated so that the hole area with different hole density is aligned with the first evaporation source. The film coating device and the film coating method of the present invention can conveniently adjust the ratio of different vapor deposition materials during the vapor deposition process without affecting the film quality, and the cost is low, which is suitable for industrial production applications.

The invention relates to the technical field of film preparation and in particular to a bidirectional deposition coating device and a coating method. The bidirectional deposition coating device is characterized in that a sputtering target material and an evaporation source are respectively and fixedly arranged above and below a workpiece umbrella stand; the evaporation source below the workpiece umbrella stand is under the auxiliary action of an ion source corresponding to the evaporation source so as to coat the surface on one side of a substrate; the sputtering target material above the workpiece umbrella stand is excited by a radio source corresponding to the sputtering target material and is used for coating the surface of another side of the substrate. The bidirectional deposition coating device has the advantages that double-surface simultaneous coating can be achieved, the purpose of simultaneously depositing two membrane material sources at one moment can be achieved, the coating procedures of the substrate requesting double-surface coating can be reduced, and the coating efficiency and quality can be improved.

The invention relates to a method for preparing ternary-component AlxGaI-xN nanocone, realizing control in the full-ingredient range (x is larger than 0 and smaller than 1). The method for preparing the ternary-component AlxGaI-xN nanocone comprises the following steps of: making anhydrous GaCl3 as a gallium source and anhydrous AlCl3 as an aluminum source with a nitrogen source by adopting a chemical vapor deposition method under the condition that the evaporation temperatures of GaCl3 and AlCl3 are respectively 70-90 DEG C and 130-150 DEG C to generate single-phase AlxGaI-xN nanocone, wherein x is larger than 0 and smaller than 1, the preferred nitrogen source is NH3, and the deposition temperature is 650-800 DEG C. In the invention, the vapor partial pressure of reaction precursors GaCl3 and AlCl3 is finely controlled in a tube furnace of a three-segment temperature area to obtain a one-dimensional nano material with a single-crystal structure and uniformly distributed components, and the atom ratio of Al/Ga can be controlled in the full-ingredient range (x is larger than 0 and smaller than 1) by changing growth conditions.

The invention belongs to the technical field of semiconductor devices, and particularly relates to a photosensitive thin film transistor and a low-temperature preparation method thereof. According tothe photosensitive thin film transistor, perovskite quantum dots are adopted as a photosensitive material, and the device can respond to light with different wavelengths by changing the proportion ofhalogen elements in the perovskite quantum dots; and the preparation method of the photosensitive thin film transistor comprises the steps of preparing an Al2O3 gate dielectric through atomic layer deposition, growing an amorphous indium gallium zinc oxide (a-IGZO) channel layer through magnetron sputtering, preparing the perovskite quantum dots through adoption of a spin-coating method, and preparing source and drain electrodes through electron beam evaporation. The long temperature of all processes does not exceed 40 DEG C, and the high-performance photosensitive thin film transistor can beobtained without heat treatment in the device preparation process. The photosensitive thin film transistor and the low-temperature preparation method thereof can be applied to the fields of flexible electronics, photoelectric detection and the like.

The invention relates to a broadband adjustable graphene electromagnetic wave absorbing material and a preparation method thereof. The preparation method comprises the following steps: preparing fourkinds of single-layer graphene oxide with different sizes, and then reducing the graphene oxide; attaching the reduced graphene oxide to a conductive medium to form a first electromagnetic wave absorption interlayer; preparing a graphene thin film as a surface electrode by adopting a chemical vapor deposition method, and preparing an oxide thin film as a dielectric layer on the graphene thin filmby adopting an electron beam evaporation coating method to form a second layer of wave-absorbing sandwich structure; fusing a semiconductor oxide and a conductive polymer to form a third layer of wave-absorbing sandwich structure; and forming a three-dimensional structure graphene oxide wave-absorbing material as a fourth layer of wave-absorbing structure through hydrothermal reaction. Different voltages are given to the top-layer graphene and the bottom-layer graphene, so that the absorption performance of electromagnetic waves is regulated and controlled. The invention aims to prepare the efficient, stable and adjustable electromagnetic wave absorbing material by using a simple method, and the purpose of active adjustability is achieved for different environments.