646 results about "Evaporation (deposition)" patented technology

The invention relates to a multi-layer composite black film and a preparation method thereof. The multi-layer composite black film is formed by sequentially stacking a base material layer, a multi-layer film system and a top covering layer, the multi-layer film system is formed by alternately stacking a plurality of absorption layers and a plurality of oxide layers, the number of the layers is 7-30, an initial layer is an oxide layer, the refractive indexes of the oxide layers are the same (1.4-1.5), the thickness ratio of the oxide layers to the absorption layers is larger than 2, and the thickness ratio of the top covering layer to the absorption layers is larger than 1. And the thicknesses of the two layers are increased and then reduced from the substrate layer to the top covering layer. A buffer layer with gradually changed oxygen content is arranged between the oxide layer and the absorption layer, and both the oxide layer and the top covering layer are made of silicon dioxide. The preparation method comprises the following steps: providing the substrate layer, alternately depositing the absorption layer and the oxide layer by using a magnetron sputtering or electron beam evaporation process to form a multilayer film system, then forming the top covering layer, controlling parameters such as vacuum degree, power, temperature and the like during deposition, and forming the buffer layer in the same cavity. The multilayer composite black film has the inner surface reflectivity of less than 1% and the appearance surface reflectivity of less than 5%, and is simple in structure and low in preparation cost.

The invention belongs to the technical field of seawater desalination, and particularly relates to a solar efficient photo-thermal conversion type floating ball and seawater evaporation application thereof. Specifically, the solar efficient photo-thermal conversion type floating ball comprises a spherical inner core and a photo-thermal conversion material wrapping the spherical inner core, and the density of the spherical inner core is 25-500 kg / m < 3 >; wherein the photo-thermal conversion material is coated at least twice. According to the solar efficient photo-thermal conversion type floating ball, the photo-thermal conversion material is coated at least twice, the loading capacity is improved, meanwhile, a porous network structure is formed, and the seawater evaporation rate can be increased; sunlight irradiates on the floating ball, light energy is converted into heat energy under the action of the surface photo-thermal conversion material, salt is deposited on the floating ball along with water evaporation, and surface salt deposition is automatically and dynamically removed through the free rotating motion of the floating ball on the water surface under the action of centrifugal force and water flow scouring. And self-recovery of the evaporation process and continuous seawater evaporation are realized.

The invention provides a system and a method for off-line measurement of a cesium evaporation rate in a fusion device. The system comprises a vacuum chamber, a cesium crucible assembly, a heating assembly, a film thickness meter, a laser absorption spectrum system and a vacuum pumping unit. According to the invention, an ultrahigh vacuum environment is provided for the whole device including the vacuum chamber by using the vacuum pumping unit; then the cesium crucible and the conveying pipeline are heated through a heating assembly, so that effective evaporation of cesium is guaranteed, and deposition of cesium on the wall face of the pipeline is reduced; measuring the deposition thickness of cesium and the concentration of cesium atoms by using a film thickness meter and a laser absorption spectrum system, and checking the measurement results of the two diagnosis methods mutually; the cesium evaporation rate is measured, and the quantitative relation between the cesium evaporation rate and the heating temperature is obtained; and finally, a measurement system is transplanted into a negative ion source, and the cesium injection amount in the vacuum stage is monitored in real time. Effective data and technical support are provided for cesium flow control in the magnetic confinement nuclear fusion negative neutral beam injection system.

The invention discloses an ultrathin hydrophilic / hydrophobic ZnO-CuS-CC photo-thermal material as well as a preparation method and application thereof, and belongs to the technical field of photo-thermal evaporators. The ultrathin hydrophilic / hydrophobic ZnO-CuS (at) CC photo-thermal material comprises a hydrophobic substrate, an ultrathin ZnO-CuS hydrophilic layer grows on the upper surface of the hydrophobic substrate, the ultrathin ZnO-CuS hydrophilic layer comprises CuS nanosheets and ZnO nanoparticles attached to the CuS nanosheets, a large number of micro-pores and cavities are formed in the surface of the ultrathin ZnO-CuS hydrophilic layer, light traps are constructed by the micro-pores and the cavities, and the micro-pores and the cavities are formed in the surface of the ultrathin ZnO-CuS hydrophilic layer. The ZnO nanoparticles reduce light reflection and improve the light absorptivity. The photo-thermal evaporator prepared from the material can solve the technical problems of how to prevent salt deposition, effectively treat organic pollutants and realize efficient evaporation in the prior art.

Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The adjacent metal-containing overhang structures defining each sub-pixel of the sub-pixel circuit of the display provide for formation of the sub-pixel circuit using evaporation deposition and provide for the metal-containing overhang structures to remain in place after the sub-pixel circuit is formed (e.g., utilizing the methods of the fifth, sixth, or seventh exemplary embodiments). Evaporation deposition may be utilized for deposition of an OLED material and cathode. The metal-containing overhang structures define deposition angles, i.e., provide for a shadowing effect during evaporation deposition. The encapsulation layer of a respective sub-pixel is disposed over the cathode with the encapsulation layer extending under at least a portion of each of the adjacent metal-containing overhang structures and along a sidewall of each of the adjacent metal-containing overhang structures.

The invention relates to the technical field of vacuum physical vapor deposition, and provides a preparation method of a porous structure low-density IWO evaporation target material based on current calcination, which comprises the following steps: firstly, carrying out current calcination on raw materials, promoting WO3 crystal grains to preferentially grow along the 111 crystal orientation by utilizing a Joule effect, forming a long-range ordered structure, increasing the density after calcination, and then crushing to retain the crystal form, so as to obtain the low-density IWO evaporation target material with the porous structure. The preparation method comprises the following steps of: adding a 15wt% PVA ethanol solution, then carrying out ball-milling cold isostatic pressing molding, then carrying out distributed sintering, volatilizing PVA to form a porous framework through first-step sintering, carrying out second-step sintering to obtain crystal grains with a continuous porous structure, and finally carrying out RPD film coating under specific parameters, so that the powder falling rate is reduced, and the TCO film is good in uniformity; through the processes of current calcination, crushing, binder forming and sintering, on the premise that the low density of the target material is kept, cooperative control over directional connection of a porous structure and crystals is achieved, the powder falling rate is reduced by 60%, the regular porous structure and ordered crystal arrangement effectively disperse thermal stress, and structural collapse is avoided; the evaporation stability is improved, and the surface roughness is reduced to Ralt; the evaporation rate fluctuates by + / -5%, and the film uniformity reaches + / -2.0%.

The invention belongs to the technical field of photoelectric detection, and discloses a molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector and a preparation method and application thereof, and the molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector is prepared by stripping single crystal molybdenum ditelluride onto an oxide layer silicon substrate through a mechanical stripping method to obtain a molybdenum ditelluride nanosheet; a nickel ditelluride nanosheet is obtained through a chemical vapor deposition method; the molybdenum ditelluride nanosheet is transferred to the nickel ditelluride nanosheet through a PVA dry transfer method to form an overlapped part, and a molybdenum ditelluride / nickel ditelluride heterojunction is formed; and preparing electrodes at two ends of the molybdenum ditelluride / nickel ditelluride heterojunction through electron beam evaporation or thermal evaporation. The photoelectric detector utilizes a built-in electric field generated by a two-dimensional material heterojunction interface to effectively improve the photoelectric conversion efficiency and response speed of a visible light wave band.

The utility model discloses a mask device, which relates to the technical field of metal mask plates, including a precision metal mask plate and a mask frame. The precision metal mask plate includes an edge area, multiple effective areas, and multiple transition areas. The edge areas are located at both ends of the precision metal mask plate along a first direction, and the edge areas are connected to the mask frame; the multiple transition areas are distributed at intervals along the first direction; each effective area is distributed between two adjacent transition areas, and each effective area is formed with a vapor deposition hole that penetrates the effective area along the thickness direction. The mask device also includes a support bar, both ends of the support bar are fixed to the mask frame, the length direction of the support bar intersects with the first direction, and the size of the support bar along the first direction is not greater than the size of the transition area along the first direction, and the support bar is connected to the corresponding transition area. The utility model has the advantages of reducing the flutter of the precision metal mask plate during the vapor deposition process and improving the color mixing yield.

The utility model belongs to the technical field of chemical vapor deposition, and particularly relates to a coupling agent evaporation structure for chemical vapor deposition equipment, which comprises a raw material bin, a feed port is arranged on the raw material bin, the side wall of the raw material bin is connected with a deposition chamber through a connecting bin, and a first heating structure is arranged on the raw material bin. A second heating structure is arranged on the connecting bin, and a thin pipe for connecting the raw material bin and the deposition chamber and allowing a coupling agent to pass through is arranged in the connecting bin. Compared with the prior art, through the ingenious structural design, the coupling agent can enter the deposition chamber in a vacuum atomization, rapid diffusion and uniform diffusion mode, so that the coupling agent can be uniformly deposited on a substrate, and the effect of increasing the adhesive force between the substrate and a film layer is fully exerted.

The invention discloses a method for preparing an upper electrode of a gallium arsenide solar cell for a low-cost space, which comprises the following steps of: corroding a gallium arsenide epitaxial wafer taking germanium as a substrate in a mixed acid corrosion solution, removing an oxide layer and pollutants on the surface of the epitaxial wafer, taking out the epitaxial wafer, and cleaning the epitaxial wafer in deionized water; the surface of the active layer of the epitaxial wafer is tightly attached to the metal grid mesh, the epitaxial wafer is put into vacuum evaporation equipment, electrode metal is evaporated layer by layer in an electron beam evaporation mode, and after evaporation is completed, the epitaxial wafer is taken out from the vacuum evaporation equipment when the epitaxial wafer is cooled to 100 DEG C or below; and placing in a vacuum sintering furnace, heating at a constant temperature for a period of time, cooling to below 100 DEG C, and taking out to obtain the space gallium arsenide solar cell top electrode. A traditional photoetching process is replaced by a metal grid mesh, the surface of an active layer of an epitaxial wafer is tightly attached to the metal grid mesh, and then the epitaxial wafer is put into a vacuum coating machine to be subjected to metal evaporation. And the evaporated metal is deposited on the surface of the epitaxial wafer through gaps of the grid mesh to prepare a conductive upper electrode.

The invention relates to the technical field of PVD coating, in particular to a PVD vacuum coating machine which comprises a vacuum machine pump set, the top end of the vacuum machine pump set is fixedly connected with a fixing table, and the top end of the fixing table is fixedly connected with a vacuum coating tank; and the workpiece placing and rotating mechanism comprises a motor fixedly connected to the inner top wall of the vacuum machine pump set, the output end of the motor is fixedly connected with a rotating plate, and a supporting frame is detachably arranged at the top end of the rotating plate. In the detection assembly, when gas containing plating materials passes through a detection box, light rays emitted by a lamp panel can be shielded and absorbed, a photoresistor board detects the light ray intensity change, converts the light ray intensity change into electric signals and transmits the electric signals to a PLC, the PLC controls the power of an evaporation source, a motor and a vacuum arc ion source according to the signals, and therefore self-adaptive adjustment of parameters is achieved. And parameters are adaptively adjusted according to actual conditions, so that plating material supply is accurately matched with actual requirements.

The utility model provides a coating device and a coating product, the coating device is suitable for the roller type coating mode, the coating device comprises a coating main roller, a winding auxiliary roller and an evaporation source, a film is guided by the winding auxiliary roller to be tangentially attached to the circular surface of the coating main roller for belt running, the evaporation source is located below the coating main roller, and the evaporation source is located below the coating main roller. And a certain included angle is formed between the connecting line between the center of the evaporation source and the center of the coating main roller and the center line of the coating main roller in the vertical direction. According to the embodiment of the utility model, the film coating angle is changed by changing the position of the evaporation source, the growth mode of the film layer is adjusted, the transverse binding force and compactness of film layer deposition are improved, and the structural defect in the transverse spreading direction of the film layer caused by vertical one-way growth of a film surface crystal cluster is avoided.

The invention provides a preparation method of an interconnection structure, a semiconductor structure and chemical mechanical polishing equipment. According to the preparation method, after a chemical mechanical polishing process is executed, a protective layer is formed on the surface of an exposed metal layer by adopting an evaporation process within a preset first time, so that oxygen isolation is realized by utilizing the protective layer. Even if waiting is overtime due to reasons in the technological process, the metal layer is protected by the protective layer, the oxidation reaction does not occur, and the performance of the device can be guaranteed. And before the diffusion barrier layer is formed, the protective layer is removed by adopting a cleaning process, so that the subsequent deposition of a thin film is not influenced, the structural characteristics of the device are not changed, and other impurities are not introduced and additional device film layer damage is not generated in the process of removing the protective layer. Moreover, the chemical mechanical polishing equipment provided by the invention is additionally provided with the evaporation chamber and the first cleaning chamber, so that not only can the preparation requirements of the preparation method of the interconnection structure be met, but also each process link is convenient to manage and control.

The invention relates to the technical field of photoelectrocatalysis, and aims to provide a Ta3N5-based photoelectrode based on a vapor deposition technology and a preparation method of the Ta3N5-based photoelectrode. According to the photoelectrode, quartz glass serves as a substrate, and the substrate is provided with a multi-layer film structure which is formed on the basis of magnetron sputtering, electron beam evaporation, thermal nitriding treatment, electrochemical deposition and coating; the multilayer film structure sequentially comprises a first Ti metal layer, a Pt conductive metal layer, a Ti < x > Al < y > alloy layer, a Ta3N5 layer, a NiFeCoOz cocatalyst layer and MNPs nano metal particles from bottom to top. The use amount of precious metal can be greatly saved, the preparation cost is reduced, and the application range is expanded; the mobility of photoelectrons can be improved, the transport of photon-generated carriers can be improved, and the photoelectric utilization efficiency can be greatly improved; and the energy loss between two photo-thermal application interfaces is greatly reduced, so that the photo-thermal utilization efficiency of the single photoelectrode is improved.

The invention relates to a memristor and a preparation method thereof. The preparation method comprises the following steps: providing an insulating substrate with a bottom electrode formed on the surface; depositing an aluminum oxide thin film on the bottom electrode by adopting electron beam evaporation under a room temperature condition to form a resistive function layer, and not performing high-temperature annealing treatment after deposition is completed, so that a primary oxygen vacancy defect is reserved in the thin film; and then depositing a top electrode on the resistive function layer through thermal evaporation or electron beam evaporation to obtain the memristor. The resistive function layer is an aluminum oxide film which is not densified through annealing, and internal defects of the resistive function layer provide a channel for metal ion migration, so that the reversible resistive characteristic is achieved. The memristor device is simple in structure and suitable for normal-temperature process preparation, the stable resistance switching behavior can be achieved, excessive densification of a film layer and thermal damage of an ITO electrode interface caused by high-temperature annealing are avoided, and the memristor has high cycle durability and nonvolatile data retention capacity and has the stable bipolar resistance change characteristic.

The invention discloses a perovskite material solution, a perovskite film and a preparation method and application thereof, and the preparation method of the perovskite material solution uses a high-boiling-point solvent as an independent additive, specifically, after a perovskite precursor is completely dissolved and filtered, the high-boiling-point solvent (a single or composite system) is quantitatively added, and the perovskite material solution is prepared. Subsequent preparation of the perovskite film can achieve the following effects by accurately controlling the vacuumizing rate and the processing time: (1) the crystallization window period is prolonged due to the slow evaporation characteristic of the high-boiling-point solvent, perovskite crystal grains are promoted to grow orderly, a uniform and compact film microstructure is formed, internal stress accumulation caused by rapid crystallization is effectively relieved, and the performance of the perovskite film is improved; the cracking risk is obviously reduced; and (2) solvent molecules are preferentially enriched in a grain boundary region in a deposition process, and uncoordinated Pb < 2 + > defects are passivated through coordination, so that the defect density of the thin film is reduced, and the photoelectric conversion efficiency of a device is improved.

A surface-enhanced Raman scattering substrate, including: a base layer; a nanopillar structure layer, which is formed on the base layer by means of nanoimprint lithography, and has a nanopillar array structure; and a thin film, which covers and is formed, by means of an oblique deposition evaporation process, on the top of the nanopillar array structure and at least one vertical side wall of the nanopillar array structure, wherein the thin film has a surface-enhanced Raman scattering effect and has an oblique angle.

The invention relates to the technical field of kits, in particular to a MoS2 back gate field effect transistor based on a wet transfer process and a preparation method of the MoS2 back gate field effect transistor. The MoS2 back gate field effect transistor is formed by sequentially arranging a silicon-based substrate, a SiO2 insulating layer, a MoS2 conducting channel layer and an Ag source drain electrode from bottom to top; a high-quality single-layer MoS2 thin film is prepared through a chemical vapor deposition (CVD) method, PMMA is adopted as a supporting layer, clean Van der Waals contact of the MoS2 thin film and a SiO2 / Si substrate is achieved through a wet transfer process of NaOH solution etching, deionized water cleaning and acetone stripping of the supporting layer, and finally a source electrode and a drain electrode are prepared by combining photoetching and thermal evaporation processes. According to the method, the problems of pollutant residues and traps of an interface between MoS2 and the substrate in the traditional process are effectively solved, the carrier mobility, transconductance and on-state current of the device are remarkably improved, the sub-threshold swing is reduced, and the method is suitable for manufacturing a two-dimensional material integrated circuit device with low power consumption and high performance.

The invention relates to the technical field of solar cells, in particular to a wide-band-gap perovskite solar cell and a preparation method thereof. The preparation method comprises the following steps: preparation of the ITO layer, O2-plasma treatment of the ITO layer, preparation of the hole transport layer, preparation of the perovskite light absorption film layer, coating of PEAI post-treatment salt, preparation of the thermal evaporation C60 electron transport layer, preparation of the SnO2 electron transport layer by an atomic layer deposition method, plating of the ITO transparent conductive electrode by a magnetron sputtering technology, preparation of the metal gate line, and evaporation of the MgF2 antireflection layer. The organic fluorescent material NPBI2 which absorbs ultraviolet light and converts the ultraviolet light into visible light is doped into the perovskite light absorption layer, so that the damage of the ultraviolet light to perovskite is avoided, the perovskite can absorb the visible light to generate power and improve the photoelectric conversion efficiency, and the organic fluorescent material can passivate crystal defects in the perovskite light absorption layer and improve the quality of the perovskite thin film. And the carrier lifetime is prolonged.

A vapor deposition apparatus is provided. The vapor deposition apparatus includes a tank for providing a liquefied material, a first unit having an alterable first volume, the first unit including a first actuator and including a first line to be in fluid communication with the tank. Further, the vapor deposition apparatus includes a second unit having an alterable second volume, the second unit including a second actuator and including a second line to be in fluid communication with the tank. The vapor deposition apparatus includes an evaporation arrangement, the evaporation arrangement being in fluid communication with the first unit and the second unit. The first actuator and the second actuator are configured to alternatingly provide a force to the alterable first volume and the alterable second volume for providing the liquefied material to the evaporation arrangement.

The invention provides an evaporation line source crucible and evaporation device.The evaporation line source crucible comprises a crucible body and a cover which covers the top of the crucible body and is provided with a nozzle, the crucible body comprises an upper crucible body and a lower crucible body connected to the bottom of the upper crucible body, and the lower crucible body comprises a plurality of sub crucible bodies arranged at intervals in the length direction; a heating component is arranged on the outer wall of each sub-crucible body, so that the heating temperature and the heating efficiency of each sub-crucible body can be independently controlled by independently controlling the heating component outside each sub-crucible body, the temperature of each sub-crucible body is ensured to be relatively consistent under independent control, the temperature uniformity in the crucible is improved, and the service life of the crucible is prolonged. The vaporization uniformity of an evaporation material in the crucible is improved, and finally the thickness uniformity of a film layer is improved; the plurality of sub-crucible bodies are arranged at intervals, so that the phenomenon of heat transfer between the sub-crucible bodies is basically avoided, the temperatures in the sub-crucible bodies are not mutually influenced, and the independence and the accuracy of internal temperature control of the sub-crucible bodies are improved.

The invention belongs to the technical field of semiconductor materials and devices, and discloses a low-temperature thermal evaporation deposition tellurium / germanium heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a germanium substrate, a tellurium thin film, a metal top electrode and a metal bottom electrode, the tellurium thin film is a polycrystalline tellurium film layer containing a micron-sized large domain, the surface roughness is lower than 1nm, and the tellurium thin film is in close contact with the germanium substrate to form a heterojunction; the metal top electrode is a platinum / gold laminated electrode, and the metal bottom electrode is an indium gallium alloy / copper foil electrode. The tellurium thin film with large crystal domain and low roughness grows on the germanium substrate through a-low temperature (-80 DEG C to-160 DEG C) thermal evaporation deposition process, and the electrode is prepared by combining a micro-nano processing technology. Compared with traditional molecular beam epitaxy, pulse laser deposition and other methods, the method is low in process cost and compatible with the integrated circuit technology, and the obtained heterojunction photoelectric detector has the excellent rectification characteristic and infrared light response and is suitable for large-scale preparation and practical application.

The invention relates to the technical field of ultraviolet photoelectric detectors, in particular to an MSM structure ultraviolet photoelectric detector based on p-Si / Ga2O3 / ZnO and a preparation method of the MSM structure ultraviolet photoelectric detector. Comprising a p-Si substrate; the Ga2O3 thin film layer is arranged on the p-Si substrate; the ZnO thin film layer is arranged on the Ga2O3 thin film layer; and the interdigital electrode is arranged on the ZnO thin film layer. The interdigital electrode is a Ti interdigital electrode, the width of the interdigital electrode is 50-100 m, the length of the interdigital electrode is 600-1000 m, and the electrode interval is 50-100 m; and the p-Si substrate is a double-surface polished boron-doped p-Si substrate. In the preparation process, magnetron sputtering and thermal evaporation deposition are adopted to prepare the photoelectric detector. The method has the advantages that manufacturing cost is reduced; the suppression ratio of UV / Vis-NIR light is improved, so that the device has higher spectral selectivity; the detection wavelength range is widened, and sensitive detection of UVA-UVC is realized.

The utility model belongs to the technical field of crucibles, and particularly relates to a perovskite evaporation source crucible assembly which comprises a quartz crucible with an opening at one end, at least one heat conduction piece arranged in the quartz crucible and a filtering piece arranged in the quartz crucible and located above the heat conduction piece. And the filtering piece covers the upper opening of the quartz crucible. According to the utility model, through the arrangement of the honeycomb-shaped heat conduction member and the filtering member, the original perovskite raw material is easier to volatilize, the loss of heating power is reduced, the time for stabilizing the deposition rate is shortened, and the large-scale mass production is facilitated; the filter screen is additionally arranged, so that raw materials are more conveniently prevented from splashing to pollute other raw materials, large blasting-boiling particles can be filtered out and splashed to a substrate in the evaporation process, a film layer grows finer and smoother, the quality is better, and defects caused to the film layer are avoided.

The invention provides a mid-infrared Cr2O3 protective film and a preparation method thereof. The film is suitable for outer layer protection of a mid-infrared band film. Metal chromium is used as a raw material, a proper amount of oxygen is filled in the reactive evaporation deposition process, meanwhile, plasma is added for assistance, the oxidation reaction is enhanced, the film strength is improved, and a single-layer Cr2O3 film is formed on the surface of the mid-infrared high-transparency optical substrate through the oxidation reaction; based on a spectrum test result, constructing a dispersion model, and accurately fitting the optical constant of the Cr2O3 film in the middle-infrared band; constructing a relation between the thickness of the Cr2O3 protective layer and transmittance attenuation according to the optical constant; cr2O3 with a proper thickness is selected to prepare a protective layer on the basis of a functional film layer according to the performance requirements of the optical element. The invention aims to provide a Cr2O3 protective film suitable for a middle-infrared band and a preparation method thereof. The film has excellent environmental adaptability such as high strength, salt mist resistance and high-temperature oxidation resistance.

The invention belongs to the technical field of preparation means of functional materials, and particularly relates to a CrSb single crystal film and a preparation method for preparing a staggered magnetic CrSb single crystal film through molecular beam epitaxy. The CrSb single crystal thin film sequentially comprises a substrate SiC / a buffer layer CrTe2 / CrSb single crystal thin film from bottom to top, and when the crystal orientation of the CrSb single crystal thin film is (0001), the CrSb single crystal thin film has six-degree symmetry. A Cr source and an Sb source are placed in different evaporation sources respectively, and evaporated Cr and Sb atoms are deposited on the surface of the SiC (111) substrate subjected to surface treatment in an ultrahigh vacuum environment. The deposition rate of Cr atoms is # imgabs0 # / min; the deposition rate ratio of Cr to Sb atoms is 1: 12; and the surface temperature of the SiC (111) substrate is 370 DEG C to 400 DEG C. According to the method, the staggered magnetic CrSb single crystal film is controllably synthesized by controlling the deposition rate of raw materials and the surface temperature of a substrate on the basis of cooperative control among the processes; the staggered magnetic CrSb single crystal film with the hexagonal crystal structure prepared by the method has an atomic-scale flat surface and excellent crystal orderliness, can meet the performance requirements of spintronics device preparation, and is suitable for subsequent scientific research.

The embodiments of the present application relate to a coating device and a coating adjustment method. The coating device includes: a shell is provided with an air outlet, and a reaction chamber is formed inside the shell, and the air outlet is connected to the reaction chamber; an evaporation table is used to heat the film material and evaporate it, and the film material forms a gaseous film material after evaporation; the mounting assembly is used to mount the substrate, and the gaseous film material forms an airflow field and adheres to the surface of the substrate to form a thin film; the grid assembly includes a plurality of grids and a plurality of driving members, and the grid adjusts the opening and closing state under the action of the driving member; the driving member drives the grid to adjust the opening and closing state under the control of the controller, so as to adjust the distribution of the airflow field, and then adjust the uniformity of the thin film formed on the substrate surface. The coating device provided by the embodiments of the present application can adjust the uniformity of the thin film formed on the substrate surface, thereby improving the deposition uniformity on the substrate surface.

The invention relates to a preparation method of a high-quality EB evaporation target, and relates to the field of target preparation, and the preparation method comprises the following steps: loading a powder raw material into a cleaned crucible, and pre-compacting to obtain a pre-compacted crucible; putting the pre-compacted crucible into spark plasma sintering equipment, vacuumizing and pressurizing, starting auxiliary heating to raise the temperature to a thermal shock buffer temperature, stopping auxiliary heating, introducing current to raise the temperature to a sintering densification temperature, preserving heat, stopping introducing current, starting auxiliary heating to carry out speed-controlled cooling, and cooling to a stress safety cooling threshold value, so as to obtain the high-temperature-resistant and high-pressure-resistant crucible. And transferring into a program control cooling system for cooling, removing the crucible, cleaning and drying to obtain the high-quality EB evaporation target material. The prepared target material has high density and mechanical strength, internal stress is relieved, good evaporation stability and film layer uniformity are shown in the electron beam physical vapor deposition process, and the finally obtained coating is compact in structure and has high hardness and high adhesive force.

The present invention relates to a dynamic adaptive evaporation system and method. The evaporation system includes a vacuum chamber, an evaporation source, and a substrate carrier. The vacuum chamber includes an evaporation zone, a transition zone, and a deposition zone, which are sequentially connected from bottom to top. A first partition is provided between the evaporation zone and the transition zone, the center of the first partition being ventilated and provided with a first partitioning device. A second partition is provided between the transition zone and the deposition zone, the center of the second partition being ventilated and provided with a second partitioning device. An evaporation source is provided in the middle of the evaporation zone. A cooling chamber is arranged around the periphery of the transition zone, the cooling chamber being provided with a condensation ring and a cryogenic trap. A substrate carrier is provided in the upper center of the deposition zone. The evaporation method comprises the steps of establishing a dynamic pressure-stratified vacuum environment, preheating, and evaporation. The evaporation system can dynamically pressure-stratify the chamber using an electromagnetic barrier with an array of charged micropores. Through pressure gradient design, the system can isolate and regulate evaporated substances and byproducts in real time, resulting in low pressure fluctuations, high coating uniformity, and high material utilization.

This invention relates to a method for remote epitaxial growth of single-crystal lead-free perovskite microsheets on germanium, comprising the following steps: using CsBr and SnBr2 as source materials placed in a reaction region, using argon as a carrier gas, placing germanium-based graphene in a deposition region, and then heating to react the source materials, followed by evaporation and deposition onto the germanium-based graphene to form single-crystal lead-free perovskite microsheets. The method of this invention can obtain perovskite microsheets with good orientation and is environmentally friendly. Furthermore, germanium is a mature semiconductor material with well-established wafer fabrication, cleaning, and surface treatment processes, making large-scale production possible and providing a new path for perovskite to move from the laboratory to high-performance, multifunctional integrated optoelectronic devices.